KR102105049B1 - A window for substrate processing apparatus, substrate processing apparatus using the same and method for processing substrate - Google Patents

Abstract

A substrate processing apparatus according to an embodiment of the present invention includes a processing chamber accommodating a processing target substrate, an antenna disposed to face the processing target substrate accommodated in the processing chamber, a window provided between the antenna and the processing chamber, and the window. And a window heating power source that supplies electric power to heat the window.

Description

A window for substrate processing apparatus, substrate processing apparatus using the same and method for processing substrate}

The present invention relates to a window for a substrate processing apparatus, a substrate processing apparatus and a substrate processing method, and more particularly, to a substrate processing apparatus and a substrate processing method using an inductively coupled plasma.

In a device that performs substrate processing such as CVD (Chemical Vapor Deposition), Etching using plasma, there are many ways to generate plasma by applying an induction electric field around the antenna by applying high frequency power to the device including the antenna. Is being applied.

In the plasma processing apparatus using an induction electric field, an antenna for generating an induction electric field and a window for protecting the antenna from plasma are essentially used.

However, by-products generated in the process of processing the substrate using plasma are attached to a window having a relatively low temperature in the chamber during the process, so that the replacement cycle of the window is shortened or maintenance / removal is required to remove by-products attached to the window.

The problem to be solved by the present invention is to provide a window for a substrate processing apparatus, a substrate processing apparatus, and a substrate processing method for reducing the phenomenon of by-products being attached to a window without significantly affecting an induced electric field for generating plasma will be.

The problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

A substrate processing apparatus according to an embodiment of the present invention for solving the above problems is provided between a processing chamber accommodating a processing target substrate, an antenna disposed to face the processing target substrate accommodated in the processing chamber, and between the antenna and the processing chamber And a window heating power source that supplies power to the window and heats the window.

The window may include at least one of boron nitride (BN) and titanium diboride (TiB2).

The window heating power source may include a DC power source.

The window for a substrate processing apparatus according to an embodiment of the present invention for solving the above problems is formed by sintering a powder containing boron nitride (BN).

The window for a substrate processing apparatus according to an embodiment of the present invention for solving the above problems is formed by sintering a powder containing titanium diboride (TiB2).

A substrate processing method according to an exemplary embodiment of the present invention for solving the above problems includes: a processing chamber accommodating a substrate to be processed, an antenna, a window provided between the antenna and the processing chamber, and the window being supplied with power to the window A substrate processing method using a substrate processing apparatus including a window heating power source to be heated, the method comprising: entering the substrate into the processing chamber, supplying power to the window using the window heating power source, and powering the antenna And supplying the processed substrate.

The method may further include cutting off power supplied to the window before supplying power to the antenna.

Other specific matters of the present invention are included in the detailed description and drawings.

According to embodiments of the present invention has at least the following effects.

Without significantly affecting the induced electric field for the generation of plasma, the phenomenon of by-products adhering to the window is reduced.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention.
FIG. 2 is a view schematically showing a cross-section of the substrate processing apparatus of FIG. 1.
3 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Advantages and features of the present invention, and methods for achieving them will be clarified with reference to embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only the embodiments allow the disclosure of the present invention to be complete, and common knowledge in the art to which the present invention pertains It is provided to completely inform the person having the scope of the invention, and the present invention is only defined by the scope of the claims. The same reference numerals refer to the same components throughout the specification.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or schematic drawings, which are ideal exemplary views of the present invention. Therefore, the shape of the exemplary diagram may be modified by manufacturing technology and / or tolerance. In addition, in each of the drawings shown in the present invention, each component may be illustrated to be slightly enlarged or reduced in consideration of convenience of description. The same reference numerals refer to the same components throughout the specification.

Hereinafter, the present invention will be described with reference to the drawings for explaining a substrate processing apparatus and a substrate processing method using the same according to an embodiment of the present invention.

1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram schematically showing a cross-section of the substrate processing apparatus of FIG. 1.

In the substrate processing apparatus 1 according to an embodiment of the present invention, a process for processing a substrate S located inside the chamber 10 is performed by supplying a process gas to the interior of the chamber 10 and generating plasma. It is a device.

1, the substrate processing apparatus 1 according to an embodiment of the present invention includes a chamber 10, a stage 30, a window support frame 50, windows 61, 62 and an antenna 40 ).

The chamber 10 is formed in a closed structure in which a space in which a stage 30, a window support frame 50, windows 61, 62 and an antenna 40 are installed is formed. The chamber 10 may be made of anodized aluminum.

As shown in FIG. 1, the stage 30 is located at the bottom inside the chamber 10. The stage 30 is configured to support the substrate S carried into the chamber 10, and may be electrically connected to a high-frequency bias power source (not shown) so that ions of the plasma are drawn to the substrate S. The high frequency power supply for bias can apply high frequency power of 6 MHz to the stage.

In order to control the temperature of the substrate S being processed in the stage 30, a temperature control mechanism such as a heater and / or a refrigerant passage may be installed. The substrate S is seated on the upper surface of the stage 30 and an electrostatic chuck (not shown) for fixing the substrate S during the process may be installed.

Meanwhile, a window support frame 50 and windows 61 and 62 are installed at an upper portion inside the chamber 10. The windows 61 and 62 may divide a space inside the chamber 10 up and down. The lower space inside the chamber 10 becomes the processing chamber A based on the windows 61 and 62, and the upper space inside the chamber 10 becomes the antenna chamber B.

Therefore, the windows 61 and 62 may be the floor of the antenna chamber B and the ceiling of the processing chamber A at the same time. As shown in FIG. 1, a stage 30 is installed in the processing chamber A, and an antenna 40 is installed in the antenna chamber B.

An exhaust hole 20 for exhausting air, gas, and the like inside the processing chamber A to the outside is formed on one side of the processing chamber A. The exhaust hole 20 is formed through the chamber 10 and may be connected to a vacuum pump (not shown) provided outside the chamber 10. The inside of the processing chamber A may be formed in a vacuum atmosphere by the operation of the vacuum pump.

Further, a gate 11 through which the substrate S enters and exits the other side of the processing chamber A is formed through the chamber 10. A gate valve 12 for opening and closing the gate 11 is provided so that the substrate S is opened only when entering and exiting and the gate 11 can be closed during the process. The gate valve 12 may be configured to seal the gate 11 when the inside of the processing chamber A is evacuated so that the inside of the processing chamber A can be maintained in a vacuum atmosphere.

The windows 61 and 62 may be installed to be supported by the window support frame 50, and as shown in FIG. 1, may be divided into a plurality of windows 61 and 62.

The antenna 40 is installed on top of the windows 61 and 62.

The antenna 40 is supplied with high frequency power from a high frequency power source (not shown). The high frequency power supply can supply high frequency power of 13.56 MHz to the antenna structure. When the high frequency power supplied from the high frequency power is applied to the antenna 40, an induction electric field is generated in the processing chamber A, and the processing gas supplied to the processing chamber A by the induction electric field is plasmad and plasma in the processing chamber A Is created. Although not shown in FIG. 1, the chamber 10 may be provided with a gas flow path and a shower head for transferring the processing gas supplied from the outside to the processing space.

By-products generated during the plasma treatment tend to adhere to the windows 61 and 62 having relatively low temperatures in the treatment chamber A. In order to prevent this, it is necessary to increase the temperature of the windows 61 and 62.

Conventionally, by-products are heated by heating the window support frame 50 supporting the windows 61 and 62 to increase the temperature of the windows 61 and 62, thereby increasing the temperature of the windows 61 and 62. ).

However, in the conventional method as described above, due to the structure in which the window support frame 50 supports the edges of the windows 61 and 62, the windows 61 and 62 are not evenly heated as a whole, so that the windows 61 and 62 are The central portion was heated to a lower temperature relative to the edge, whereby by-products were attached to the central portion of the windows 61, 62, or the required temperature to the central portion of the windows 61, 62 was excessively heated to heat the periphery. There was a need.

To this end, the substrate processing apparatus 1 according to an embodiment of the present invention includes windows 61 and 62 that can be directly heated. To this end, the windows 61 and 62 are preferably heated by receiving power, and are formed of a material that does not significantly affect the induced electric field generated by the antenna 40 at the same time. For example, ceramic heaters may be used as the windows 61 and 62.

To this end, the windows 61 and 62 may be manufactured by sintering boron nitride (BN) powder or the like in a plate shape. Due to the high heat resistance and insulation characteristic peculiar to boron nitride (BN), the windows 61 and 62 are driven by electric power directly applied to the windows 61 and 62 without significantly affecting the induced electric field generated in the antenna 40. Can be effectively heated.

Alternatively, the windows 61 and 62 may be manufactured by sintering titanium diboride (TiB2) powder or the like in a plate shape. Titanium diboride (TiB2) has high hardness and high thermal conductivity and thermal stability of metal, so power applied directly to the windows 61 and 62 without significantly affecting the induced electric field generated by the antenna 40 By this, the windows 61 and 62 can be effectively heated.

2, the windows 61 to 64 are electrically connected to the window heating power sources 71 to 74. DC power may be used as the window heating powers 71 to 74.

In the case of processing a large area substrate, as shown in FIG. 2, the windows 61 to 64 may be divided into a plurality and installed. 2 shows an example in which four windows 61 to 64 are installed, but the number of windows installed may be modified according to embodiments.

2, the windows 61 to 64 may be connected to the window heating power sources 71 to 74, respectively. In this case, the heating temperature of each window 61 to 64 can be individually adjusted.

For example, if there are more by-products attached to the first window 61 than the other windows 62 to 64 in the previous process, the first window so that the temperature of the first window 61 is maintained in a higher state in the next process. The power of the window heating power supply 71 applied to the 61 may be improved, or the time at which power is applied from the window heating power supply 71 may be increased.

Depending on the embodiment, each window 61 to 64 may be configured to be connected in series or in parallel to one window heating power source 71 to 74.

Hereinafter, a substrate processing method using the above-described substrate processing apparatus 1 will be described.

3 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

As shown in Figure 3, the substrate processing method according to an embodiment of the present invention, the step of entering the substrate to be processed (S11), supplying power to the window (S12), cutting off the power supplied to the window It includes a step (S13), supplying power to the antenna (S14) and processing the substrate to be processed (S15).

In step S11 of entering the substrate to be processed, the substrate S to be processed is carried into the processing chamber A of the chamber 10. The substrate S to be processed passes through the gate 11 of the chamber 10 by a transfer device (not shown), such as a robot arm, and is carried into the processing chamber A, and then is seated on the stage 30. After the substrate S is mounted on the stage 30, the substrate S is fixed on the stage 30 by an electrostatic chuck or the like.

On the other hand, when the substrate to be processed (S) is seated on the stage 30, and the transfer device carrying the substrate to be processed (S) into the processing chamber (A) is carried out through the gate 11 to the outside of the chamber 10, The gate valve 12 closes the gate 11.

After the gate 11 is closed, the inside of the processing chamber A is evacuated through the exhaust hole 20 to become a vacuum atmosphere.

In step S12 of supplying power to the window, power is supplied to the windows 61 to 64 using the window heating power sources 71 to 74.

The step (S12) of supplying power to the window may proceed until the windows 61 to 64 reach a preset temperature. The substrate processing apparatus 1 may include a temperature sensor (not shown) that measures the temperature of the windows 61 to 64, and the window heating power sources 71 to 74 are controlled according to the measured value of the temperature sensor, so that the window When (61 ~ 64) is heated to a predetermined temperature, the window heating power supply (71 ~ 74) can cut off the power supplied to the window (61 ~ 64) (S13). Even when the power supplied to the windows 61 to 64 is cut off, the windows 61 to 64 remain heated for a certain period of time.

Alternatively, the step (S12) of supplying power to the window may be performed for a preset time. The window heating power supply 71 to 74 supplies power to the windows 61 to 64 for a predetermined time so that the windows 61 to 64 are heated, and when a certain time passes, the power supplied to the windows 61 to 64 It can be blocked (S13).

The step of supplying power to the window (S12) proceeds simultaneously with the step of entering the substrate to be processed (S11), or proceeds before the step of entering the substrate to be processed (S11), or the step of entering the substrate to be processed (S11) ). However, the step (S12) of heating the window so that the windows (61 to 64) are sufficiently heated before plasma is generated in the processing chamber (A) is performed simultaneously with the step of entering the substrate to be processed (S11), or It is preferable to proceed before the step of entering the processing substrate (S11).

In step S14 of supplying power to the antenna, high-frequency power is applied to the antenna 40. An induction electric field is generated in the processing chamber A by the high-frequency power applied to the antenna 40, and the processing gas supplied to the processing chamber A is plasmad by the induction electric field to generate plasma in the processing chamber A.

The step of blocking power supplied to the window (S13) is preferably performed before the step of supplying power to the antenna (S14).

In step S15 of processing the substrate to be processed, the substrate S is processed using plasma generated in the processing chamber A. For example, in the step (S15) of processing the substrate to be processed, an etching process may be performed on the substrate S to be processed using plasma.

Since the substrate processing apparatus 1 according to an embodiment of the present invention is directly supplied with power to the windows 61 to 64 and the windows 61 to 64 are directly heated, the substrate S is generated during processing. By-products are not attached to the windows (61 to 64), are moved to the side of the exhaust hole 20 is relatively low temperature is discharged to the outside of the chamber (10).

In addition, since the by-products do not adhere well to the windows 61 to 64, maintenance of the windows 61 to 64 becomes easier, and the by-products attached to the windows 61 to 64 drop to the substrate S during processing. The adverse effects being reduced are also reduced.

Those of ordinary skill in the art to which the present invention pertains will appreciate that the present invention may be implemented in other specific forms without changing its technical spirit or essential features. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the following claims rather than the above detailed description, and it should be interpreted that all changes or modified forms derived from the meaning and scope of the claims and equivalent concepts thereof are included in the scope of the present invention. do.

1: substrate processing apparatus 10: chamber
11: Gate 12: Gate valve
20: exhaust hole 30: stage
40: antenna 50: window support frame
61 to 64: Windows 71 to 74: Window heating power
A: Processing room B: Antenna room
S: Substrate to be treated

Claims (7)

A processing chamber accommodating the substrate to be processed;
An antenna arranged to face the substrate to be processed accommodated in the processing chamber;
A window provided between the antenna and the processing chamber; And
And a window heating power source that directly supplies power to the window so that the window is heated. According to claim 1,
The window includes at least one of boron nitride (BN) and titanium diboride (TiB2), a substrate processing apparatus. According to claim 1,
The window heating power supply includes a direct current power supply, a substrate processing apparatus. delete delete A substrate processing method using a substrate processing apparatus including a processing chamber accommodating a substrate to be processed, an antenna, a window provided between the antenna and the processing chamber, and a window heating power source that directly supplies power to the window to heat the window. In,
Entering the substrate to be processed into the processing chamber;
Supplying power to the window using the window heating power; And
And processing the substrate to be processed by supplying power to the antenna. The method of claim 6,
And cutting off the power supplied to the window prior to supplying power to the antenna.

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