KR102102017B1 - Conductive structure body, and method of manufacturing the same - Google Patents

Abstract

The present application relates to a conductive structure and its manufacturing method.

Description

Conductive structure body, and method of manufacturing the same}

The present application relates to a conductive structure and its manufacturing method.

The liquid crystal display device is the most important display device used in the recent multi-media society, and is widely used from mobile phones to computer monitors, laptops, and televisions. As a liquid crystal display device, there is a TN mode in which a liquid crystal layer in which a Nematic liquid crystal is twisted is arranged between two orthogonal polarizing plates, and then an electric field is applied in a direction perpendicular to the substrate. In the TN mode, since the liquid crystal is aligned in a direction perpendicular to the substrate when displaying black, birefringence occurs due to liquid crystal molecules and light leakage occurs at an inclined viewing angle.

In order to solve the TN mode viewing angle problem, an IPS mode (In-Plane Switching Mode) was introduced to form two electrodes on one substrate and adjust the direction of the liquid crystal with a transverse electric field generated between the two electrodes. . That is, the IPS mode method is also called a planar switching liquid crystal display or a transverse electric field type liquid crystal display, and by arranging electrodes on the same surface in a cell in which liquid crystals are disposed, liquid crystals are not aligned vertically, but aligned parallel to the transverse planes of the electrode. As possible. However, in the case of the IPS mode method, it may be difficult to implement high image quality due to high light reflectivity of the pixel electrode and the common electrode.

In order to solve this problem, recently, studies have been conducted on Cu-based darkening deposition films having excellent conductivity, but existing darkening layers can be resolved because they have weaknesses in terms of reliability such as heat resistance, constant temperature, humidity, and salt water resistance. The development of technology is urgent.

Republic of Korea Patent Publication No. 10-2010-0007605

This application is intended to provide a conductive structure and a method for manufacturing the same.

One embodiment of the present application is described; A metal layer provided on the substrate; And it includes a light reflection reducing layer disposed on the metal layer, the light reflection reducing layer provides a conductive structure characterized in that it comprises an amorphous metal oxynitride.

In addition, an exemplary embodiment of the present application includes preparing a substrate; Forming a metal layer on the substrate; And forming a light reflection reducing layer on the metal layer, wherein the light reflection reducing layer includes an amorphous metal oxynitride.

The conductive structure according to an exemplary embodiment of the present application can obtain excellent effects in comparison with the conventional ones in terms of reliability such as heat resistance, constant temperature, humidity, and salt water resistance.

1 to 3 each show a laminated structure of a conductive structure according to an exemplary embodiment of the present application.
4 illustrates a stacked structure when a conductive structure according to an exemplary embodiment of the present application is patterned.
5 is an XRD graph for showing crystallinity of an amorphous and crystalline reducing layer according to an exemplary embodiment of the present application.
6 is a graph for comparing the heat resistance of the conductive structure and the crystalline light reflection reducing layer according to an exemplary embodiment of the present application.

When a member is referred to as being “on” another member in the present specification, this includes not only the case where one member abuts another member, but also another member between the two members.

In the present specification, when a part “includes” a certain component, this means that other components may be further included rather than excluding other components unless specifically stated to the contrary.

Hereinafter, the present specification will be described in more detail.

One embodiment of the present application is described; A metal layer provided on the substrate; And it includes a light reflection reducing layer disposed on the metal layer, the light reflection reducing layer provides a conductive structure characterized in that it comprises an amorphous metal oxynitride.

The base material may be used for a base material of a conductive structure, and is not particularly limited in its kind, but glass or PET may be used.

According to the unconditional state of the present application, the amorphous metal oxynitride is not particularly limited as long as it is a metal oxynitride having amorphous properties, but Cu, Ag, Au, Cr, Co, Al, Mo, La, Ni, Pd, and Zr , Be, Hf, Sn, Y, P, Si and Ti may be one or more oxynitrides selected from the group consisting of.

Further, according to an exemplary embodiment of the present application, the amorphous metal oxynitride is represented by Mg _a Cu _b Y _c ON, the a is 35 to 85, the b is 15 to 65, and the c is 0.5 to 30 Can be

In the Mg _a Cu _b Y _c ON, a, b, and c represent the composition ratio of each atom, and may be a + b + c = 100. Amorphous metal can be produced by adjusting the composition. The Mg _a Cu _b Y _c ON may mean that oxygen, nitrogen, etc. are made using reactive deposition for darkening through reinforcement / destructive interference with the lower layer.

Further, according to an exemplary embodiment of the present application, the amorphous metal oxynitride is represented by Mg _a Cu _b Y _c ON, the a is 40 to 80, the b is 20 to 60, and the c is 1 to 25 Can be

Further, according to an exemplary embodiment of the present application, the amorphous metal oxynitride is represented by Mg _a Cu _b Y _c ON, the a is 40 to 60, the b is 20 to 40, and the c is 1 to 20 Can be

Further, according to an exemplary embodiment of the present application, the amorphous metal oxynitride is represented by Mg _a Cu _b Y _c ON, the a is 40 to 50, the b is 30 to 40, and the c is 10 to 20 Can be

Further, according to an exemplary embodiment of the present application, the metal layer may include one or more selected from the group consisting of Cu, Ag, Au, Cr, Co, Al, and Mo. Specifically, according to an exemplary embodiment of the present application, the metal layer may include Cu as a main component. Further, according to an exemplary embodiment of the present application, the metal layer may be made of Cu.

According to an exemplary embodiment of the present application, when the metal layer has Cu as a main component, batch etching with the light reflection reducing layer may be more easily performed.

According to the exemplary embodiment of the present application, the thickness of the metal layer may be 10 nm or more and 1 μm or less. Specifically, according to an exemplary embodiment of the present application, the thickness of the metal layer may be 100 nm or more, and more specifically 150 nm or more. Further, according to an exemplary embodiment of the present application, the thickness of the metal layer may be 500 nm or less, and more specifically, 200 nm or less. Since the thickness of the metal layer is very thin, since the electrical conductivity depends on the thickness, since a continuous thickness is not formed, a specific resistance value may increase, so the thickness of the metal layer may be 100 nm or more.

According to the exemplary embodiment of the present application, the thickness of the light reflection reducing layer may be 20 nm or more and 100 nm or less. Specifically, according to an exemplary embodiment of the present application, the thickness of the light reflection reducing layer may be 20 nm or more and 60 nm or less. More specifically, according to an exemplary embodiment of the present application, the thickness of the light reflection reducing layer may be 30 nm or more and 60 nm or less.

When the thickness of the light reflection reducing layer is less than 20 nm, a problem that the high light reflectivity by the metal layer may not be sufficiently lowered may occur. In addition, when the thickness of the light reflection reducing layer is more than 100 nm, a problem that it is difficult to pattern the light reflection reducing layer may occur.

According to an exemplary embodiment of the present application, in the light having a wavelength of 380 nm to 780 nm, the average light reflectivity on the surface of the light reflection reducing layer may be 35% or less. Specifically, according to an exemplary embodiment of the present application, in the light having a wavelength of 380 nm to 780 nm, the average light reflectivity on the surface of the light reflection reducing layer may be 25% or less, or 20% or less. More specifically, according to an exemplary embodiment of the present application, in the light having a wavelength of 380 nm to 780 nm, the average light reflectivity on the surface of the light reflection reducing layer may be 15% or less. According to an exemplary embodiment of the present application, the average light reflectivity on the surface of the light reflection reducing layer may be 1% or more.

The average light reflectivity may be measured in terms of exposing the conductive structure to the field of view.

According to an exemplary embodiment of the present application, the light reflection reducing layer may be provided on a surface adjacent to the substrate of the metal layer.

1 shows a laminated structure of a conductive structure according to an exemplary embodiment of the present application. Specifically, FIG. 1 illustrates a conductive structure in which the substrate 100, the metal layer 200, and the light reflection reducing layer 300 are sequentially provided. However, the structure of FIG. 1 is not limited, and an additional layer may be further provided.

According to an exemplary embodiment of the present application, the light reflection reducing layer may be provided on a surface adjacent to a substrate of the metal layer and a surface opposite to a substrate of the metal layer.

Figure 2 shows a laminated structure of a conductive structure according to an embodiment of the present application. Specifically, FIG. 2 illustrates a conductive structure in which the substrate 100, the light reflection reducing layer 300, and the metal layer 200 are sequentially provided. However, the structure of FIG. 2 is not limited, and an additional layer may be further provided.

According to an exemplary embodiment of the present application, the light reflection reducing layer may be provided on the opposite side of the surface adjacent to the substrate of the metal layer.

3 illustrates a stacked structure of a conductive structure according to an exemplary embodiment of the present application. Specifically, FIG. 3 shows a conductive structure in which the substrate 100, the light reflection reducing layer 300, the metal layer 200, and the light reflection reducing layer 300 are sequentially provided. However, it is not limited to the structure of FIG. 3, and an additional layer may be further provided.

According to an exemplary embodiment of the present application, the metal layer and the light reflection reducing layer may include a metal pattern layer and a light reflection reducing pattern layer each including a plurality of openings.

According to an exemplary embodiment of the present application, the metal pattern layer may be formed through patterning of the metal layer,

According to an exemplary embodiment of the present application, the light reflection reduction pattern layer may be formed through patterning of the light reflection reduction layer.

According to an exemplary embodiment of the present application, the metal pattern layer may include a plurality of openings and a metal line dividing the same.

According to an exemplary embodiment of the present application, the light reflection reduction pattern layer may include a plurality of openings and a light reflection reduction line partitioning the openings.

According to an exemplary embodiment of the present application, the light reflection reduction line may be provided on at least one surface of the metal line.

According to an exemplary embodiment of the present application, the light reflection reduction pattern layer may be provided on at least one surface of the metal pattern layer. Specifically, the light reflection reduction pattern layer may have a pattern having the same shape as the metal pattern layer. However, the metal pattern layer and the light reflection reducing pattern layer need not be exactly the same as the line width of each adjacent pattern layer, and narrow or wide compared to the line width of the adjacent pattern layer is also included in the scope of the present application.

According to an exemplary embodiment of the present application, the line width of the light reflection reduction pattern layer may be 80% or more and 120% or less of the line width of the metal pattern layer. More specifically, the line width of the light reflection reduction pattern layer may be in the form of a pattern having a line width equal to or greater than the line width of the metal pattern layer.

 When the light reflection reduction pattern layer has a line width greater than the line width of the metal layer, the light reflection reduction pattern layer can provide a greater effect of covering the metal pattern layer when viewed by the user, so that the gloss of the metal layer itself or There is an advantage that the effect by reflection can be effectively blocked. However, even if the line width of the light reflection reduction pattern layer is the same as the line width of the metal pattern layer, an effect of light reflection reduction can be achieved.

According to an exemplary embodiment of the present application, the metal pattern layer and the light reflection reduction pattern layer may form a regular pattern or an irregular pattern. Specifically, the metal pattern layer and the light reflection reduction pattern layer may be provided while forming a pattern on the substrate through a patterning process.

Specifically, the pattern may be in the form of a polygon, circle, oval, or amorphous, such as a triangle or a square. The triangle may be a regular triangle or a right triangle, and the square may be a square, a rectangle or a trapezoid.

As the regular pattern, a pattern form in the art, such as a mesh pattern, may be used. The irregular pattern is not particularly limited, but may be in the form of a boundary line of figures forming a Voronoi diagram. According to an exemplary embodiment of the present application, when the pattern form is an irregular pattern, a diffraction pattern of reflected light by directional illumination may be removed by the irregular pattern, and light scattering by the light reflection reduction pattern layer By minimizing the influence by the can be minimized the problem in visibility.

According to an exemplary embodiment of the present application, the line widths of the metal pattern layer and the light reflection pattern layer may be 0.1 μm or more and 100 μm or less, respectively.

Specifically, according to an exemplary embodiment of the present application, the line width of the metal pattern layer and the light reflection pattern layer may be 0.1 μm or more and 50 μm or less, 0.1 μm or more and 30 μm or less, or 0.1 μm or more and 10 μm or less, It is not limited to this. Line widths of the metal pattern layer and the light reflection pattern layer may be designed according to the end use of the conductive structure.

If the line width of the metal pattern layer and the light reflection pattern layer is less than 0.1 μm, realization of the pattern may be difficult, and when it is more than 100 μm, visibility may be deteriorated.

According to an exemplary embodiment of the present application, the line spacing between adjacent pattern lines of the metal pattern layer and the light reflection pattern layer may be 0.1 μm or more and 100 μm or less.

According to the exemplary embodiment of the present application, the line spacing may be 0.1 μm or more, more specifically 10 μm or more, and even more specifically 20 μm or more. Further, according to an exemplary embodiment of the present application, the line spacing may be 100 μm or less, and more specifically, 30 μm or less.

According to an exemplary embodiment of the present application, the metal pattern layer and the light reflection reduction pattern layer may be implemented in a pattern of fine line width, so that an electrode including the same can realize excellent visibility.

4 illustrates a stacked structure when a conductive structure according to an exemplary embodiment of the present application is patterned. Specifically, FIG. 2 shows that the substrate 100, the metal pattern layer 210, and the light reflection reduction pattern layer 310 are sequentially provided. However, the structure of FIG. 4 is not limited, and an additional layer may be further provided. In FIG. 4, a denotes the line width of the metal pattern layer and the light reflection reduction pattern layer, and b denotes the line spacing between adjacent pattern lines of the metal pattern layer and the light reflection reduction pattern layer.

According to an exemplary embodiment of the present application, the substrate may be a transparent substrate. Specifically, according to an exemplary embodiment of the present application, it may be glass or polyethylene terephthalate (PET), polycarbonate (PC) or polyamide (PA). Alternatively, according to an exemplary embodiment of the present application, the substrate may be an insulating layer of a liquid crystal display device. Specifically, the substrate may be any member provided with the metal layer.

According to an exemplary embodiment of the present application, a transparent conductive layer may be further provided between the substrate and the metal layer.

According to an exemplary embodiment of the present application, a transparent conductive oxide layer may be used as the transparent conductive layer. As the transparent conductive oxide, indium oxide, zinc oxide, indium tin oxide, indium zinc oxide, indium zinc tin oxide, and an amorphous transparent conductive polymer may be used, and one or more of them may be used together. It is not limited to this. According to an exemplary embodiment of the present application, the transparent conductive layer may be an indium tin oxide layer.

According to the exemplary embodiment of the present application, the thickness of the transparent conductive layer may be 15 nm or more and 20 nm or less, but is not limited thereto. The transparent conductive layer may be formed using a deposition process or a printing process using the above-described transparent conductive layer material.

According to an exemplary embodiment of the present application, preparing a substrate; Forming a metal layer on the substrate; And forming a light reflection reducing layer on the metal layer, wherein the light reflection reducing layer includes an amorphous metal oxynitride.

In the method of manufacturing a conductive structure according to an exemplary embodiment of the present specification, the configuration of a substrate, a metal layer, a light reflection reducing layer, a metal pattern layer, a light reflection reducing pattern layer is the same as described above.

According to one embodiment of the present specification, after the forming of the metal layer, the forming of the light reflection reducing layer may be performed. Alternatively, according to an exemplary embodiment of the present specification, a step of forming the metal layer may be performed after the step of forming the light reflection reducing layer.

According to an exemplary embodiment of the present specification, the step of forming the metal layer may be to form a front layer on one surface of the substrate.

According to an exemplary embodiment of the present specification, the step of forming the light reflection reducing layer may be to form a front layer on one surface of the metal layer.

The front layer may mean that one side or film that is physically continuous is formed on an area of 80% or more of one surface of the lower member on which the target member is formed. Specifically, the front layer may mean one layer before patterning.

According to an exemplary embodiment of the present specification, the step of forming the metal layer and the step of forming the light reflection reducing layer are respectively evaporation, sputtering, wet coating, evaporation, electrolytic plating or electroless plating, metal foil Methods such as lamination of can be used. Specifically, according to an exemplary embodiment of the present specification, the step of forming the metal layer and the step of forming the light reflection reducing layer may each use a deposition or sputtering method.

According to one embodiment of the present specification, the metal layer may be formed using a printing method. Specifically, the printing method may use an ink or paste containing a metal, and the paste may further include a binder resin, a solvent, and a glass frit in addition to the metal.

Standard Cubic centimeter per minutes (sccm) of the present specification may be cm 3 / min.

According to an exemplary embodiment of the present specification, the sputtering method may be a DC sputtering method.

According to an exemplary embodiment of the present specification, the partial pressure of the oxygen gas may be 3 sccm or more and 10 sccm or less.

According to the exemplary embodiment of the present specification, the partial pressure of nitrogen gas may be 0 sccm or more and 20 sccm or less.

According to the exemplary embodiment of the present specification, the metal layer and the light reflection reducing layer may be collectively etched to further include forming a metal pattern layer and a light reflection reducing pattern layer.

The batch etching means simultaneously patterning the metal layer and the light reflection reducing layer by one etching process using one etching solution.

The etchant is an etchant commonly used in the art, and may be applied as long as it can etch the light reflection reducing layer.

According to one embodiment of the present specification, the patterning step may use a material having an etching resist property. The etching resist is formed using a printing method, a photolithography method, a photography method, a dry film resist method, a wet resist method, a method using a mask or laser transfer, for example, thermal transfer imaging. In particular, a dry film resist method may be used. However, it is not limited thereto. The metal layer and / or light reflection reducing layer is etched and patterned using the etch resist pattern, and the etch resist pattern can be easily removed by a strip process.

According to an exemplary embodiment of the present specification, the step of forming the metal pattern layer and the light reflection reducing pattern layer is the exposure time to the etching solution of the metal layer and the light reflection reducing layer 1 minute or more and 4 minutes or less, or 1 minute or more 3 It may include adjusting to minutes or less.

When the exposure time to the etching solution, that is, the etching time is within the above range, fine patterning of the metal layer and the light reflection reducing layer is possible.

One embodiment of the present specification provides an electrode including the conductive structure.

According to an exemplary embodiment of the present specification, the electrode may be an electrode for a touch panel, an electrode for a liquid crystal display, or an electrode for an OLED display.

An exemplary embodiment of the present specification provides a display device including an electrode.

In this specification, the display device refers to a TV, a computer monitor, and the like, and includes a display element forming an image and a case supporting the display element.

According to an exemplary embodiment of the present specification, the electrode may be an electrode for a touch sensor of a touch screen panel.

According to an exemplary embodiment of the present specification, the electrode may be a wiring electrode, a common electrode, and / or a pixel electrode of a liquid crystal display device. Specifically, the electrode may be a wiring electrode, a common electrode, and / or a pixel electrode in the IPS liquid crystal display device.

According to an exemplary embodiment of the present specification, the electrode may be a wiring electrode, a common electrode, and / or a pixel electrode of an OLED display device.

According to an exemplary embodiment of the present specification, the electrode may be a pixel electrode of an OLED lighting device.

Hereinafter, examples will be described in detail to specifically describe the present specification. However, the embodiments according to the present specification may be modified in various other forms, and the scope of the present specification is not interpreted to be limited to the embodiments described below. The embodiments of the present specification are provided to more fully describe the present specification to those skilled in the art.

Example

After loading the glass substrate into the stuttering chamber, a vacuum of about 3 x 10 ^-6 Torr was maintained. Then, an argon gas was injected at 40 sccm using DC power to the Cu sputtering target to form a metal layer of about 100 nm.

An argon gas was injected at 40 sccm on the metal layer, and the working pressures were maintained at a level of 10 mTorr, and an amorphous light reflection layer was formed using reactive deposition in which a predetermined amount of oxygen gas and nitrogen gas was injected.

When forming the amorphous light reflection layer, each single target was used, and controlled within the Mg 100 to 300 W, Cu 100 to 300 W, and Y 100 to 300 W levels to form a light reflection reducing layer by a DC sputtering method to prepare a conductive structure. Did.

Comparative example

After loading the glass substrate into the stuttering chamber, a vacuum of about 3 x 10 ^-6 Torr was maintained. Then, an argon gas was injected at 40 sccm using DC power to the Cu sputtering target to form a metal layer of about 100 nm.

Argon gas was injected on the metal layer at 40 sccm, and the working pressures were maintained at a level of 10 mTorr, and a crystalline light reflection layer was formed using reactive deposition in which a predetermined amount of oxygen gas and nitrogen gas was injected.

When forming the crystalline light reflection layer, each single target was used, and by adjusting the Cu to 100 to 300 W level, a light reflection reduction layer was formed by a DC sputtering method to prepare a conductive structure.

Experimental example

XRD graphs of crystallinity changes for the amorphous light reflection reducing layer and the crystalline reducing layer respectively formed in the above Examples and Comparative Examples are shown in FIG. 5 below. Referring to this, it can be seen that unlike the amorphous reflective layer, the crystalline reflective layer clearly exhibits a crystalline portion.

Thereafter, the crystalline conductive structures produced by each were heat treated at 150 ° C. for 1 hour, and the light reflectances before and after heat treatment were compared. The results are shown in FIG. 6.

Referring to FIG. 6, in the case of the crystalline light reflecting layer according to the comparative example, it can be seen that the light reflectivity increased before and after the heat treatment at an overall wavelength, and particularly at a specific wavelength band. However, in the case of the amorphous light reflection layer according to the embodiment, it can be seen that the increase in light reflectance before and after the heat treatment is not large, and thus there is an improvement in environmental resistance such as heat resistance and durability.

100: description
200: metal layer
210: metal pattern layer
300: light reflection reducing layer
310: light reflection reduction pattern layer

Claims (12)

materials;
A metal layer provided on the substrate; And
It includes a light reflection reducing layer disposed on the metal layer,
The light reflection reducing layer includes an amorphous metal oxynitride,
The amorphous metal oxynitride is represented by Mg _a Cu _b Y _c ON,
A is 35 to 85,
B is 15 to 65,
The c is a conductive structure, characterized in that 0.5 to 30. delete delete The method according to claim 1,
The thickness of the light reflection reducing layer is a conductive structure that is 20 nm or more and 100 nm or less. The method according to claim 1,
In light having a wavelength of 380 nm to 780 nm, the conductive structure having an average light reflectance at the surface of the light reflection reducing layer is 35% or less. The method according to claim 1,
Each of the metal layer and the light reflection reducing layer includes a metal pattern layer including a plurality of openings and a light reflection reducing pattern layer. The method according to claim 6,
The line width of the metal pattern layer and the light reflection pattern layer is 0.1 μm or more and 100 μm or less, respectively. The method according to claim 6,
The conductive structure of the metal pattern layer and the line spacing between adjacent pattern lines of the light reflection pattern layer is 0.1 μm or more and 100 μm or less. The method according to claim 6,
The line width of the light reflection reducing pattern layer is 80% or more and 120% or less of the line width of the metal pattern layer. Preparing a substrate;
Forming a metal layer on the substrate; And
And forming a light reflection reducing layer on the metal layer,
The light reflection reducing layer includes an amorphous metal oxynitride,
The amorphous metal oxynitride is represented by Mg _a Cu _b Y _c ON,
A is 35 to 85,
B is 15 to 65,
The c is a method of manufacturing a conductive structure, characterized in that 0.5 to 30. delete The method according to claim 10,
The step of forming the light reflection reducing layer is a method of manufacturing a conductive structure, characterized in that using deposition or sputtering.

Images