KR102086404B1 - Organic electroluminescent device, method of fabricating the same and organic electroluminescent display - Google Patents

Abstract

The present invention provides a transistor formed on a substrate on which a pixel region is defined, a first electrode positioned in a first subregion of the pixel region, and electrically connected to a drain electrode of the transistor, and a first organic layer positioned on the first electrode. And a first sub pixel including a second electrode disposed on the first organic layer, a third electrode positioned in the second sub region of the pixel area and electrically connected to the second electrode, and on the third electrode. Provided are an organic light emitting display device, a display device, and a method of manufacturing the same, including a second subpixel including a second organic layer positioned and a fourth electrode disposed on the second organic layer.

Description

Organic electroluminescent device, manufacturing method thereof, and organic electroluminescent display device {ORGANIC ELECTROLUMINESCENT DEVICE, METHOD OF FABRICATING THE SAME AND ORGANIC ELECTROLUMINESCENT DISPLAY}

The present invention relates to an organic light emitting display device, a method of manufacturing the same, and an organic light emitting display device.

An organic electroluminescent device is a device that emits light using an electroluminescent phenomenon in which an organic compound located between electrodes emits light when a current flows between both electrodes. An organic light emitting display device is one that displays an image by controlling the amount of light emitted by controlling the amount of current flowing through the organic compound.

The organic light emitting display device is advantageous in that it is possible to reduce the weight and thickness of the organic light emitting display device by emitting light with a thin organic compound between the electrodes.

1 is a circuit diagram of a typical organic light emitting display device.

Referring to FIG. 1, an organic light emitting display device 10 includes a circuit including a transistor 12 and an organic light emitting diode 14 that control a current IOLED or a voltage VOLED supplied from a power supply VDD and 16. Can be modeled as:

By controlling the voltage between the gate electrode and the source electrode of the transistor 12, it is possible to adjust the current (IOLED) or the voltage (VOLED) supplied to the organic light emitting diode 14, in this case, the transistor 12 in the VTFT A voltage is formed and a voltage difference of VOLED is formed across the organic light emitting diode 14.

The electric power consumed in the organic electroluminescent element 10 is calculated from the relationship between the current and the voltage formed in the organic electroluminescent element 10 as follows.

<Equation 1>

P _TFT = I _OLED x V _TFT , P _OLED = I _OLED x V _OLED

P _DEVICE = P _TFT + P _OLED

Referring to Equation 1, the power P _DEVICE consumed in the organic light emitting diode 10 is the sum of the power P _TFT consumed in the transistor and the power P _OLED consumed in the organic electroluminescent diode 14. It consists of.

In this case, the power directly contributing to the degree of light emission of the organic light emitting diode 10 is power consumed by the organic light emitting diode 14, and the power P _TFT consumed by the transistor 12 is equal to that of the organic light emitting diode. Electric power does not contribute to light emission.

Since the power P _TFT consumed by the transistor 12 does not contribute to light emission, it becomes a factor of lowering the efficiency of the organic light emitting element 10. In addition, the heat generated according to the power P _TFT consumed in the transistor 12 becomes a factor of reducing the lifetime of the organic light emitting diode 14 as well as the transistor 12 itself.

In view of the above, an object of the present invention is to provide a technique for reducing power consumption of an organic light emitting display device or a display device in one aspect.

In another aspect, it is an object of the present invention to provide a technique for reducing the amount of current supplied to an organic electroluminescent element while maintaining the same brightness.

In another aspect, an object of the present invention is to provide a technique for increasing the lifetime of an organic light emitting display device or display device.

In order to achieve the above object, in one aspect, the present invention provides a semiconductor device comprising: a transistor formed on a substrate on which a pixel region is defined; A first electrode positioned in a first sub-region of the pixel region, electrically connected to a source electrode or a drain electrode of the transistor and receiving a driving current from the transistor, and a first organic layer disposed on the first electrode; A first sub pixel including a second electrode on the first organic layer; And a third electrode positioned in a second sub region of the pixel region, electrically connected to the second electrode to receive the driving current from the first sub pixel, and a second organic layer disposed on the third electrode. And a second sub-pixel including a fourth electrode positioned on the second organic layer.

In another aspect, the invention provides a method for forming a transistor on a substrate in which a pixel region is defined; The pixel area may be defined as two or more sub-areas, a first electrode electrically connected to a source electrode or a drain electrode of the transistor in the first sub-area and receiving a driving current from the transistor is formed, and the second sub-area Forming a third electrode corresponding to the first electrode; Forming a first organic layer spaced apart from the third electrode on the first electrode, and forming a second organic layer corresponding to the first organic layer on the third electrode; And forming a second electrode electrically connected to the third electrode on the first organic layer, and forming a fourth electrode corresponding to the second electrode on the second organic layer. It provides a manufacturing method.

In another aspect, the present invention provides a display device including: a display panel including two or more pixels formed in pixel regions defined by crossing two or more data lines and two or more gate lines; A data driver transferring a data signal through the data lines; A gate driver transferring a gate signal through the gate lines; And a timing controller configured to control driving timing of the data driver and the gate driver, wherein a first pixel formed in at least one pixel area of the pixel areas comprises: a first transistor; A first electrode positioned in a first sub-region of the pixel region, electrically connected to a source electrode or a drain electrode of the first transistor, and receiving a driving current from the first transistor; A first sub pixel including a first organic layer and a second electrode on the first organic layer; And a third electrode positioned in a second sub region of the pixel region, electrically connected to the second electrode to receive the driving current from the first sub pixel, and a second organic layer disposed on the third electrode. And a second sub pixel including a fourth electrode on the second organic layer.

As described above, according to the present invention, the power consumption of the organic light emitting display device or the display device is reduced.

In addition, according to the present invention, the amount of current supplied to the organic light emitting display device can be reduced while maintaining the same brightness.

In addition, according to the present invention, there is an effect of increasing the lifetime of the organic light emitting display device or the display device.

1 is a circuit diagram of a typical organic light emitting display device.
2 is a diagram illustrating a light emission principle of an organic light emitting diode.
3 is a diagram illustrating organic light emitting diodes having different structures exhibiting the same luminance with the same area.
4 is a circuit diagram modeling an organic light emitting display device according to embodiments of the present invention.
5 is a schematic plan view of an organic light emitting display device including one organic light emitting display device according to a first embodiment.
FIG. 6 is a schematic cross-sectional view of an organic light emitting display device taken along line II ′ of FIG. 5.
FIG. 7 is a plan view showing only the partition, the bank, and the first and third electrodes in the plan view of FIG. 5.
8A to 8F are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the first embodiment.
FIG. 9 is a cross-sectional view of another manufacturing process of the organic light emitting display device according to the first embodiment, which performs the process of FIG. 8F by another method.
10 is a schematic cross-sectional view of an organic light emitting display device according to a second embodiment.
11 is a schematic cross-sectional view of an organic light emitting display device according to a third embodiment.
12A and 12B are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to a third embodiment.
13 is a schematic cross-sectional view of an organic light emitting display device according to a fourth embodiment.
14A to 14D are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the fourth embodiment.
15 is a schematic cross-sectional view of an organic light emitting display device according to a fifth embodiment.
FIG. 16 is a plan view illustrating only the first and third electrodes and the bank of the organic light emitting display device according to the fifth embodiment.
17A to 17C are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the fifth embodiment.
18 is a schematic cross-sectional view of an organic light emitting display device according to a sixth embodiment.
19 is a plan view illustrating only the first and third electrodes and the bank of the organic light emitting display device according to the sixth embodiment.
20 is a schematic plan view of an organic light emitting display device including an organic light emitting display device according to a seventh embodiment.
21 is a system configuration diagram of an organic light emitting display device according to an embodiment.
FIG. 22 is a partially enlarged plan view of an organic light emitting display device according to an eighth embodiment showing pixels P1, P2, and P3 of FIG. 21.
FIG. 23 is a partially enlarged plan view of an organic light emitting display device according to a ninth embodiment showing pixels P1, P2, and P3 of FIG. 21.
FIG. 24 is a partially enlarged plan view of an organic light emitting display device according to a tenth exemplary embodiment of the pixels P1, P2, P3, and P4 of FIG. 21.
FIG. 25 is a partially enlarged plan view of an organic light emitting display device according to an eleventh exemplary embodiment of the pixels P1, P2, P3, and P4 of FIG. 21.
FIG. 26 is a circuit diagram modeling the P1 and P2 pixels of FIG. 21.
FIG. 27 is a diagram illustrating a process of generating different data voltages for P1 and P2 of FIG. 26.
28 is a graph showing a decrease in life as the internal device temperature increases (FIG. 28A) and a graph of decrease in life as the current density increases (FIG. 28B).

Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible even though they are shown in different drawings. In addition, in describing the embodiments of the present invention, if it is determined that the detailed description of the related known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

In addition, in describing the component of this invention, terms, such as 1st, 2nd, A, B, (a), (b), can be used. These terms are only for distinguishing the components from other components, and the nature, order or order of the components are not limited by the terms. If a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected to or connected to that other component, but there may be another configuration between each component. It is to be understood that the elements may be "connected", "coupled" or "connected". In the same context, when a component is described as being formed "on" or "under" another component, that component is both formed directly on or indirectly through another component. It should be understood to include.

2 is a diagram illustrating a light emission principle of an organic light emitting diode.

Referring to FIG. 2, the organic light emitting diode 20 includes organic layers 23, 24, 25, 26, and 27 formed between an anode 21 as a pixel electrode and a cathode 22 as a common electrode. do. The organic layer is, for example, a hole injection layer 23, a hole transport layer 24, an emission layer 25, an electron transport layer 26 and an electron injection layer. layer, 27).

In the organic light emitting diode 20, when a driving current or a driving voltage is applied to the anode 21 and the cathode 22, holes passing through the hole transport layer and electrons passing through the electron transport layer are moved to the emission layer to form excitons. The excitons return to the ground state and convert energy into light to emit light.

As can be seen through the light emission process described above, excitons must first be formed in order to produce light, and holes and electrons must be introduced into the light emitting layer to form such excitons. As a result, the amount of energy converted into light is determined by the amount of holes and electrons flowing into the emission layer 25 to form excitons.

Since the amount of holes and electrons can be represented by the amount of current supplied to the anode 21 of the organic light emitting diode 20, the luminance of the organic light emitting diode 20 is consequently proportional to the amount of current supplied to the organic light emitting diode. It can be expressed as.

However, since the probability of exciton formation per unit area may saturate due to the characteristics of the organic light emitting diode 20, the luminance of the organic light emitting diode 20 does not continuously increase as the amount of current increases. Rather, the method of increasing the brightness by increasing the current density supplied to the organic light emitting diode 20 to a predetermined limit or more may reduce the lifespan of the organic light emitting diode 20.

The present invention provides a technique for reducing the amount of current supplied to the organic light emitting device while maintaining the same brightness.

3 is a diagram illustrating organic light emitting diodes having different structures exhibiting the same luminance with the same area.

Hereinafter, for convenience of description, square meters (m ² ) are used as area units and amperes (A) as current units.

Referring to FIG. 3A, the first organic light emitting diode 10 includes an organic light emitting diode composed of a transistor 12 for controlling a current supplied from the power sources VDD1 and 16 and an area of 2A ² m ² . (14) is included.

The organic electroluminescent diode 14 composed of an area of 2A ² m ² is supplied with a current of the 2 · I _OLED (A).

When the luminance of B (cd / A · m ² ) per current supplied to the unit area is exhibited according to the characteristics of the organic light emitting diode 14, the organic light emitting diode 14 and the first organic light emitting element ( The luminance of 10) is as follows.

<Equation 2>

Luminance of the organic electroluminescent diode 14 = B (cd / A · m ² ) x 2 · I _OLED (A / m ² ) = 2 · B · I _OLED (cd)

Luminance of the first organic electroluminescent element 10 = Luminance of the organic electroluminescent diode 14 = 2 · B · I _OLED (cd)

Referring to FIG. 3B, the second organic electroluminescent element 31 divides the area of the transistor 32 and 2A ² m ² , which control the current supplied from the power sources VDD2 and 38, in two planes. And two organic light emitting diodes 35 and 36 each having an area of 1A ² m ² .

First, the current of I _OLED (A) is supplied to the first organic light emitting diode 35 electrically connected to the transistor 32. The current passing through the first organic electroluminescent diode 35 is transferred to the second organic electroluminescent diode 36 connected in series again so that the current of I _OLED (A) continues to the second organic electroluminescent diode 36. It is supplied.

In this case, if the luminance of B (cd / A · m ² ) per current supplied to the unit area is exerted according to the characteristics of the two organic light emitting diodes 35 and 36, the organic light emitting diodes 35 and 36 are respectively provided. ) And the luminance of the second organic electroluminescent element 31 are as follows.

<Equation 3>

Luminance of the first organic light emitting diode 35 = B (cd / A · m ² ) x I _OLED (A / m ² ) x 1 (m ² ) = B · I _OLED (cd)

Luminance of the second organic electroluminescent diode 36 = B (cd / A · m ² ) x I _OLED (A / m ² ) x 1 (m ² ) = B · I _OLED (cd)

Luminance of the second organic electroluminescent element 31 = Luminance of the first organic electroluminescent diode 36 + Luminance of the second organic electroluminescent diode 36 = 2 · B · I _OLED (cd)

Comparing Equations 2 and 3, the first organic electroluminescent element 10 shown in FIG. 3A and the second organic electroluminescent element 31 shown in FIG. 3B have a structure. It is understood that they have the same brightness although different. In addition, the organic light emitting diodes 35 and 36 of FIG. 3B are formed by dividing the organic light emitting diodes 14 of FIG. The structures all have the same area. As a result, the organic electroluminescent element 10 of FIG. 3A and the organic electroluminescent element 31 of FIG. 3B exhibit the same luminance with the same area.

However, the difference between the two structures is that in (a) of FIG. 3, the current of the 2 · I _OLED (A) is supplied to the organic electroluminescent element 10, and in the case of (b) of FIG. 3, the I _OLED ( The current of A) is supplied to the organic electroluminescent element 31. Therefore, when the organic light emitting device 31 of FIG. 3B has the structure, the amount of current can be reduced by half while exhibiting the same luminance with the same area.

4 is a circuit diagram modeling an organic light emitting display device according to embodiments of the present invention.

Referring to FIG. 4, the organic light emitting display device 31 is divided into two transistors 32 that control a current (1/2 · I _OLED ) or a voltage (2 · V _OLED ) supplied from a power source VDD, 38. It can be modeled as a circuit consisting of the organic light emitting diodes (35, 36).

By controlling the voltage between the gate electrode and the source electrode of the transistor 32, it is possible to adjust the current (1/2 · I _OLED ) or voltage (2 · V _OLED ) supplied to the organic light emitting diodes 35 and 36. At this time, the voltage of the V _TFT is formed in the transistor 32 and the voltage of the 2V _OLED is formed in the organic light emitting diodes 35 and 36.

The electric power consumed in the organic electroluminescent element 31 is calculated from the relationship between the current and the voltage formed in the organic electroluminescent element 31 as follows.

<Equation 4>

P _TFT = 1/2 x I _OLED x V _TFT

P _OLED1 = 1/2 x I _OLED x V _OLED

P _OLED2 = 1/2 x I _OLED x V _OLED

P _OLED = P _OLED1 + P _OLED1 = I _OLED x V _OLED

P _DEVICE = P _TFT + P _OLED

Referring to Equation 4, the power (P _DEVICE ) consumed in the organic light emitting device is the power (P _TFT ) consumed in the transistor 32 and the power (P _OLED ) consumed in the organic electroluminescent diodes 35 and 36. The power P _OLED consumed by the organic light emitting diodes 35 and 36 is composed of the sum of the power consumed by each organic light emitting diode (P _OLED1 + P _OLED1 ).

At this time, comparing Equation 1 and Equation 4, the power consumption (P _OLED = I _OLED x V _OLED ) in the organic light emitting diode is the same, but the power consumption of the transistor 32 in the organic light emitting device structure of FIG. It can be seen that (P _TFT = 1/2 x I _OLED x V _TFT ) is reduced to half of the power consumption (P _TFT = I _OLED x V _TFT ) of the transistor 12 in the organic light emitting device structure of FIG. 1.

Therefore, the organic light emitting diode 31 having the circuit model according to the exemplary embodiment of FIG. 4 reduces the power consumption of the transistor as compared to the organic light emitting diode 10 described with reference to FIG. 1. The power consumption of the is reduced.

In FIG. 4, for convenience of description, a structure in which an organic light emitting diode is divided into two is illustrated as an example, but the present invention is not limited thereto, and the organic light emitting diode may be divided into three or more. When the organic light emitting diode is divided into a larger number of times, the current supplied to the organic light emitting diode is further reduced to further reduce the power consumption of the transistor, thereby lowering the power consumption of the entire organic light emitting device. It works.

Hereinafter, embodiments of an organic light emitting display device that can be modeled by the circuit described with reference to FIG. 4 and a display device including the organic light emitting display device will be described.

<First Example >

FIG. 5 is a schematic plan view of an organic light emitting display device including one organic light emitting display device according to a first embodiment, and FIG. 6 is a schematic cross-sectional view of the organic light emitting display taken along line II ′ of FIG. 5. to be.

The organic light emitting display device may include a plurality of wiring lines, and referring to FIG. 5, the plurality of wiring lines may include a gate for transmitting a gate signal on a substrate 100 in a first direction (a horizontal direction in FIG. 5). The line 101 may include a data line 102 for transmitting data signals and a power line 104 for supplying high voltage power spaced apart from each other in a second direction (vertical direction in FIG. 5). In this case, the power line 104 may be formed to be spaced apart from the gate line 101 side by side. The gate line 101 extends in the horizontal direction to the gate pad (not shown) on the substrate 100, and the data line 102 extends in the longitudinal direction to the data pad (not shown) on the substrate 100. have.

The gate line 101, the data line 102, and the power line 104 may be formed of a metal material having low resistance, for example, copper (Cu), copper alloy, aluminum (Al), aluminum alloy (AlNd), and molybdenum ( By depositing one or more materials selected from Mo) and molybdenum alloys (MoTi) may have a single layer or multilayer structure.

The organic light emitting display device includes an electrode and an organic layer in a pixel region defined by the intersection of the gate line 101 and the data line 102 and emits light according to a current supplied from a transistor formed on the substrate 100. It includes an element.

The organic light emitting display device has a switching transistor 106 having a gate electrode 106a connected to the gate line 101, one end 106b connected to the data line 102, and the other end 106c connected to the first node 108. And a driving transistor 110 having a gate electrode 116 connected to the first node 108 and one end 122 connected to the power line 104, and between the power line 104 and the first node 108. It may include a capacitor 109 connected.

In addition, the organic light emitting diode may include a first sub pixel and a second sub pixel formed by dividing one pixel into two. The first sub pixel includes the first electrode 132, the second electrode 170 (see FIG. 6), and the first organic layer 160 (see FIG. 6) positioned between the first electrode 132 and the second electrode 170. The second sub-pixel includes a third electrode 134, a fourth electrode 175 (see FIG. 6), and a second organic layer disposed between the third electrode 134 and the fourth electrode 175 (see FIG. 6). (162, see FIG. 6).

In the electrical connection relationship, the first electrode 132 of the first sub pixel is connected to the other end 124 of the driving transistor 110, and the second electrode 170 of the first sub pixel is connected to the second sub pixel. It is connected to the third electrode 134. In addition, the fourth electrode 175 of the second sub pixel is electrically connected to the common electrode (not shown).

Although the first embodiment described above is based on a 2T1C pixel structure including two transistors and one capacitor, the present invention is not limited thereto and the pixel structure includes all cases including two or more transistors and one or more capacitors. Encompasses

Referring to the electrical function of the organic light emitting display device, first, the switching transistor 106 is turned on by a gate signal supplied through the gate line 101 and supplies a data signal supplied through the data line 102 to the driving transistor 110. ) To the gate electrode 116. The capacitor 109 stores the data signal supplied through the switching transistor 106 to allow the driving transistor 110 to be turned on for a predetermined time. In addition, the driving transistor 110 drives in response to the data signal stored in the capacitor 109. The driving transistor 110 controls the driving current or the driving voltage supplied to the first sub pixel and the second sub pixel in response to the data signal to adjust the luminance of the first sub pixel and the second sub pixel.

When the driving transistor 110 is driven, the first sub pixel and the second sub pixel emit light by a current supplied through the power supply line 104. The driving current supplied through the driving transistor 110 is first delivered to the first electrode 132 of the first sub pixel to flow through the first organic layer 160 to emit light of the first sub pixel. The current flowing into the second electrode 170 of the first sub pixel is transferred to the third electrode 134 of the second sub pixel and flows through the second organic layer 162 and the fourth electrode 175. 2 sub-pixels are made to emit light. The current flowing to the fourth electrode 175 of the second sub pixel finally flows to the common electrode (not shown).

Referring to FIG. 6, the organic light emitting diode will be described based on a single layer structure.

The semiconductor layer 112 including the source region 112b, the channel region 112a, and the drain region 112c of the driving transistor 110 is formed on the substrate 100.

A buffer layer (not shown) may be further formed on the substrate 100 and the semiconductor layer 112. In this case, the buffer layer may serve to prevent diffusion of moisture or impurities generated from the substrate 100 or to control crystallization of the semiconductor layer to be formed in a later process by adjusting the heat transfer rate during crystallization.

The semiconductor layer 112 is doped with a P-type impurity or an N-type impurity to form a source region 112b and a drain region 112c, and at the same time, a channel region interposed between the source region 112b and the drain region 112c. 112a can be defined. In the case of a P-type transistor, an element of Group 3, such as boron (B), aluminum (Al), gallium (Ga), and indium (In), may be used as an impurity to be doped. In the case of an N-type transistor, an impurity to be doped Elements of group 5, such as phosphorus (P), arsenic (As), and antimony (Sb), can be used. Holes are used as carriers for P-type transistors, and electrons are used for carriers for N-type transistors. The circuit model of the organic light emitting display device may vary depending on the type of the driving transistor 110. 3 is a circuit model when the P-type transistor is applied.

The gate insulating layer 114 is formed on the substrate 100 on which the semiconductor layer 112 is formed. The gate insulating layer 114 may be one selected from an inorganic insulating material, for example, silicon oxide, silicon nitride, or multiple layers thereof. The gate electrode 116 is formed on the gate insulating layer 114 to correspond to the semiconductor layer 112 to form the driving transistor 110. When the gate electrode 116 is formed, the gate lines 101 and 118 may also be formed together.

On the other hand, on the gate electrode 116, an interlayer insulating film 120 made of an inorganic insulating material, for example, silicon nitride (SiNx), and having a predetermined thickness, for example, about 6000 kV to 8000 kPa, is formed. In this case, the interlayer insulating layer 120 is provided with a contact hole of the semiconductor layer 112 exposing the source region 112b and the drain region 112c located on both sides of the channel region 112a of the semiconductor layer 112. In addition, a source electrode 122 and a drain electrode 124 formed of a metal material and electrically contacting the source / drain regions 112b and 112c exposed through the contact hole are formed on the interlayer insulating layer 120. .

The passivation layer 130 is positioned on the driving transistor 110 on which the source electrode 122 and the drain electrode 124 are formed. In this case, a contact hole (or a via hole (see 131 of FIG. 8A)) exposing the source electrode 122 or the drain electrode 124 of the driving transistor 110 is formed in the protection layer 130.

The protective layer 130 may be any one selected from an inorganic insulating material, a silicon oxide film, a silicon nitride film, or a silicate on glass, or an organic insulating material, polyimide, or benzocyclobutene series resin. ) Or acrylate (acrylate) or may be formed in a multi-layered structure thereof.

Meanwhile, the protective layer 130 may include a color filter (not shown) at a position corresponding to the pixel area. The color filter may include a material for converting colors of the first sub-pixel or the second sub-pixel formed in the pixel region into another color. For example, when the first sub-pixel or the second sub-pixel emits white light, the color filter formed on the passivation layer 130 may be converted into a desired color, including a color conversion material that converts the color of the pixel. As another example, when the first sub-pixel or the second sub-pixel emits blue light, the color filter may convert color to red or green. When the first sub pixel or the second sub pixel is to be displayed in blue, the first sub pixel or the second sub pixel may be displayed in blue without being included in a separate color filter. In the present specification, displaying the primary emission color as it is can be interpreted as color conversion in a broad sense.

In the above example, the color filter is formed on the protective layer 130 between the pixel and the substrate 100 as an example, but the color filter is disposed on the pixel (for example, between the substrate and the encapsulation film or in the encapsulation substrate). It may be located. In this case, the light emission of the pixel including the first sub-pixel and the second sub-pixel is performed in the direction of the color filter positioned on the upper side.

Meanwhile, in the embodiments of FIGS. 5 and 6, the polysilicon is a semiconductor layer 112, and the driving has a top gate type including a source region 112b and a drain region 112c doped with Group 3 or Group 5 elements. Although the transistor 110 is shown, as another example, a bottom gate type driving transistor including pure and impurity amorphous silicon or an oxide semiconductor as a semiconductor layer may be formed. However, the present invention is not limited to this specific driving transistor structure.

Referring to FIG. 6, the first electrode contacting the source electrode 122 or the drain electrode 124 of the driving transistor 110 through a contact hole in the first sub-region 180 on the protective layer 130. 132 is formed, and the third electrode 134 is formed to be spaced apart from the first electrode 132 in the second sub-region 182.

When the driving transistor 110 is a P type, the first electrode 132 and the third electrode 134 have a relatively large work function value to serve as an anode electrode and have a transparent conductive material such as indium-tin-oxide ( ITO) or a metal oxide such as indium-zinc-oxide (IZO), a combination of metal and oxide such as ZnO: Al or SnO2: Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline, and the like. The first electrode 132 and the third electrode 134 may be carbon nanotubes, graphene, silver nanowires, transparent conductive oxides, or the like.

When the organic light emitting device is a top emission method, a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag) under the first electrode 132 and the third electrode 134 to improve reflection efficiency. The reflection plate (not shown) may be further formed as an auxiliary electrode.

On the other hand, when the driving transistor 110 is of the N type, the first electrode 132 and the third electrode 134 is a metal material having a relatively small work function value, such as aluminum (Al), aluminum to function as a cathode electrode It may be made of any one or more of alloys, silver (Ag), magnesium (Mg), gold (Au). When the organic light emitting device is a top emission type, when the first electrode 132 and the third electrode 134 are formed to have a predetermined thickness, for example, a thickness of 500 A (Om Strong) or more, the transmittance is almost 0%. There is no need to provide a separate reflector.

In the above example, when the driving transistor 110 is P type, the first electrode 132 and the third electrode 134 are described as acting as an anode, and when the driving transistor 110 is N type, Although the first electrode 132 and the third electrode 134 have been described as serving as a cathode, the present invention is not limited thereto. According to the circuit model design method of the organic light emitting display device, the first electrode 132 and the third electrode 134 formed on the P-type driving transistor 110 with the protective layer 130 therebetween may function as a cathode. Can be. In this case, the first electrode 132 may be in electrical contact with the source electrode of the P-type driving transistor 110.

At the edges of the first electrode 132 and the third electrode 134, a bank 150 or a bank 150 / partition wall 140, which is an insulating structure (or a pixel defining layer or pixel division part), is formed. Hereinafter, the location, shape, width, and thickness of the bank 150 / partition wall 140, which is an insulating structure, will be exemplarily described, but the present invention is not limited thereto.

In detail, the first sub-region 180 and the second sub-region 182 in which one pixel region is divided into two parts of the first electrode 132 of the first sub pixel and the third electrode 134 of the second sub pixel. The bank 150 as an insulating structure formed on the edge is located.

In general, to define a pixel area, a bank is formed to distinguish a non-light emitting area in which a switching transistor, a driving transistor, and various wirings are formed from a light emitting area in which an organic light emitting diode is formed. The bank is intended to prevent deterioration of the organic material in the stepped portion when various transistors and various wirings are formed so that the surface is not smooth and the organic film is formed on the unevenly formed stepped surface. That is, a bank is formed on the non-light emitting area to distinguish the flat light emitting area by only stacking thin films on the flat substrate and the non-light emitting area where the switching transistor, the driving transistor, and various wirings are formed.

The bank 150 may be formed in a tapered shape at the edge. This allows the organic layer and the metal layer formed on the first electrode 132 and the third electrode 134 to be formed without stepping due to the tapered shape of the bank 150. When the organic layer and the metal layer are formed so as not to be stepped, the step coverage is improved.

The bank 150 may be made of an inorganic insulating material such as a nitride film (SiNx), a silicon oxide film (SiO ₂ ), or an organic insulating material such as benzocyclobutene or acrylic resin.

A lower surface of the first bank 150a adjacent to the first partition wall 140a positioned in the first subregion 180 is located on the first electrode 132, and the first subregion 180 includes the first bank 150a. The second bank 150b that is not adjacent to the partition wall 140a is formed such that its lower surface surrounds the edge of the first electrode 132.

The third bank 150c adjacent to the second partition wall 140b, which is in contact with the boundary 187 of the second subregion 182 in the second subregion 182, has a lower surface on the third electrode 134. The fourth bank 150d positioned at the second sub-region 182 and not adjacent to the second partition wall 140b is formed so that the lower surface surrounds the edge of the third electrode 134.

The partition wall 140 is positioned at some of the edges of the first electrode 132 and the third electrode 134. In the first sub region 180, the first partition wall 140a is formed at an edge of the first electrode 132, but is not formed in a direction bordering the second sub region 182. The lower surface of the first partition wall 140a is formed to surround the edge of the first electrode 132.

The second partition wall 140b is positioned at a portion of the second subregion 182 that contacts the boundary 187 of the first subregion 180. The lower surface of the second partition wall 140b is positioned on the third electrode 134.

The partition wall 140 has a structure in which at least part of the partition wall is tapered in reverse. The inverse tapered shape on the side forms a shaded region 189 for the vertical incidence outside the bottom surface of the partition wall 140. In such a structure, when the deposition particles are vertically thermally deposited on the upper surface of the partition wall 140, the deposits are stacked outside the boundary while the partition wall 140 serves as a mask and shares a boundary with the shadow area 189, and into the shadow area 189. It is not deposited.

As an example, the partition wall 140 may be formed by spin coating a photosensitive material on the protective layer 130, the first electrode 132, and the third electrode 134, and may include a blocking part and a semi-transmissive part on the photosensitive material. And a halftone mask formed of a transmissive portion, and then subjected to a process of exposing and developing to have an inverse taper shape (reverse phase structure) as described above. In this case, the partition wall 140 may use one selected from the group consisting of acrylic resin, polyimide resin, or polyester resin as the photosensitive material.

On the other hand, the first partition wall 140a disposed on the first electrode 132 is formed such that its lower surface surrounds the edge of the first electrode 132 so that the first electrode 132 is outside the first partition wall 140a. The second partition wall 140b is disposed on the third electrode 134 so that the lower surface thereof is disposed on the third electrode 134 so that the end surface of the third electrode 134 is lower than the reverse tapered structure. Is exposed and allows the second electrode 170 to contact the exposed end of the third electrode 134.

In FIG. 6, an embodiment in which banks 150a and 150c are mainly located at the bottom of the partition 140 adjacent to one side of the partition wall 140, and a portion thereof is located on the upper surface of the partition wall 140 is shown. However, the present invention is not limited to such a structure, and as another embodiment, the bank 150 may have a certain degree, for example, higher than the height of the partition wall 150 while maintaining the stem coverage effect so that the overall thickness of the device is not thickened. 1/3 to 1/4 times thinner may be formed.

The first organic layer 160 including the light emitting layer and the second electrode 170 are positioned on the first electrode 132 on which the bank 150 / the partition wall 140 are formed, and the third electrode 134 includes the light emitting layer. The second organic layer 162 and the fourth electrode 175 are positioned.

In this case, when the first electrode 132 and the third electrode 134 serve as an anode electrode, the first organic layer 160 and the second organic layer 162 may be a hole injection layer 190 / hole. It may be a multi-layered structure that sequentially includes a hole transporting layer 191 / an organic light emitting layer 192 / an electron transporting layer 193 / an electron injection layer 194, but is not limited thereto. It may be a structure. In addition, when the first electrode 132 and the third electrode 134 serve as a cathode electrode, the first organic layer 160 and the second organic layer 162 may be an electron injection layer 194 / electron transport layer 193. The organic light emitting layer 192 / hole transport layer 191 / hole injection layer 190 may be a multi-layer structure sequentially, but is not limited to this may be a single layer structure.

The second electrode 170 may include one or more conductive material layers. In detail, the second electrode 170 may include a first conductive material layer, for example, a metal conductive material layer 171, and a second conductive material layer, for example, a transparent conductive material layer 172.

In this case, the metal conductive material layer 171 of the second electrode 170 shares a boundary with the shaded region 189 of the second partition wall 140b together with the first organic layer 160, but the second electrode 170 One end of the transparent conductive material layer 172 extends further in the direction of the second sub-region 182 than the first organic layer 160 to enter the sound region 189 below the second partition wall 140b. In addition, an edge portion of the third electrode 134 positioned in the direction of the boundary 187 between the first sub-region 180 and the second sub-region 182 among the edges of the third electrode 134 is the partition wall 140b. Is located within the shaded region 189. According to the positional relationship, the metal conductive material layer 171 and the first organic layer 160 of the second electrode 170 are spaced apart from the third electrode 134, but the transparent conductive material layer 172 of the second electrode 170 is disposed. The silver may contact the edge of the third electrode 134 in the shaded region 189 of the partition wall 140b. Accordingly, the transparent conductive material layer 172 of the second electrode 170 is electrically connected to the third electrode 134.

Referring to an enlarged cross-sectional view of the boundary area between the first sub pixel and the second sub pixel of FIG. 6, the transparent conductivity of the second electrode is a shaded region 189 of the second partition wall 140b formed at the end of the third electrode 134. The material layer 172 flows in and is in electrical contact with the third electrode 134. At this time, the edge 173 of the portion of the transparent conductive material layer 172 of the second electrode flowing into the shaded region 189 has a shape in which the thickness is continuously reduced, and a cross section of the transparent conductive material layer 172 of the second electrode is formed. Cross sections of the third electrode 134 may be adjacent to each other, or a portion of the transparent conductive material layer 172 of the second electrode may be positioned on the third electrode 134.

The transparent conductive material layer 172 of the second electrode 170 may be the same conductive material as the first electrode 132 and the third electrode 134, and the fourth electrode 175 may be formed of the second electrode 170. It may be the same conductive material as the metal conductive material layer 171.

When the second electrode 170 and the fourth electrode 175 function as the cathode electrode, the metal conductive material layer 171 of the fourth electrode 175 and the second electrode has a relatively small work function value, for example For example, a suitable metal such as tin, magnesium, indium, calcium, sodium, lithium, aluminum, silver, or a suitable alloy thereof may be used or a two-layer structure such as lithium fluoride and aluminum, lithium oxide and aluminum, strontium oxide and aluminum. Can be done. Meanwhile, the second electrode 170 and the fourth electrode 175 may be carbon nanotubes, graphene, silver nanowires, transparent conductive oxides, or the like.

In addition, when the second electrode 170 and the fourth electrode 175 function as an anode electrode, the fourth electrode 175 and the second electrode 170 have a relatively large work function and have a transparent conductive material, for example Metal oxides such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), metal and oxide combinations such as ZnO: Al or SnO2: Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline, and the like.

The second electrode 170 is electrically connected to the third electrode 134, but the fourth electrode 175 of the second sub-pixel which performs the same function due to the partition wall 140 surrounding the first sub-region 180. And a common electrode of another pixel (when the second electrode is a cathode electrode, the cathode electrode of another pixel). In contrast, the fourth electrode 175 is electrically connected to the common electrode of another pixel through a portion in which the partition wall is not formed in the second sub-region 182.

FIG. 7 is a plan view showing only the partition walls, the banks, and the first and third electrodes in the plan view of FIG. 5, and FIG. 7A shows only the partition walls and the first and third electrodes, and FIG. Denotes only the bank and the first / third electrode, and FIG. 7C illustrates only the partition and the bank.

A planar structure in the pixel area of the organic light emitting display device will be described with reference to FIG. 7.

The first sub-region 180 and the second sub-region 182 in which the first sub-pixel and the second sub-pixel are respectively positioned are defined / defined by the bank 150 or the partition wall 140.

Referring to FIG. 7A, a first partition wall 140a having a “C” shape is positioned along an edge of the first electrode 132 in the first sub-region 180. In this case, the first partition wall 140a is not formed on the first electrode 132 in the boundary (187 of FIG. 6) with the second sub-region 182. In the second subregion 182, the second partition wall 140b is positioned on the edge of the third electrode 134 in a direction (187 of FIG. 6) with the first subregion 180. In the second sub-region 182, the third partition wall 140c is positioned on the edge of the third electrode 134 in a vertical direction (a direction parallel to the data line (see 102 in FIG. 5)).

The first partition wall 140a, the second partition wall 140b, and the third partition wall 140c are connected to each other and form a substantially “ㅂ” shape in the entire pixel area. In this case, the first sub-pixel of the first sub-region 180 is surrounded by the first partition 140a and the second partition 140b, but the second sub-pixel of the second sub-region 182 has no partition formed therein. It has a structure that is connected to other pixels through the part.

Referring to FIG. 7B, a bank 150 is positioned at edges of the first electrode 132 and the third electrode 134.

In detail, the first bank 150a may be partially overlapped with the first partition wall 140a on the first electrode 132, and may be disposed along the edge of the first electrode 132 at a position where the partition wall is not formed. 150b) is located. The third bank 150c is positioned to partially overlap the second partition wall 140b on the third electrode 134, and the fourth bank 150d is disposed along the edge of the third electrode 134 at a position where the bank is not formed. Located. In addition, the fifth bank 150d is positioned to partially overlap the third partition wall 140c on the third electrode edge. Also, the bank 150f may be located at a portion bordering with another pixel.

The bank 150 may be formed to be partially opened after application of the entire surface. In this case, the emission region 184 of the first sub-pixel and the emission region 186 of the second sub-pixel are opened.

Some openings exist in the relationship with the partition wall 140. Referring to FIGS. 7B and 7C, the boundary between the first sub-region 180 and the second sub-region 182 (FIG. 6). An opening region 188 is located between the second partition wall 140b and the second bank 150b at a portion 187 of the second partition wall, and between the bank 150f bordering the “ㅂ” shaped partition wall 140 and other pixels. An opening region 185 is also located.

The organic layer and the electrodes are sequentially stacked on the first electrode 132 and the third electrode 134 in which the emission regions 184 and 186 are opened to form a first sub pixel and a second sub pixel. In other words, a first subpixel is formed in the first subregion 180, a second subpixel is formed in the second subregion 182, and one subpixel is formed as the first subregion 180 and the second subregion 182. The unit pixel area may be configured.

The organic layer formed on the entire surface of the pixel region is separated into the first organic layer 160 and the second organic layer 162 due to the inverse tapered shape of the partition wall 140. In addition, the metal layer is also formed to be separated into the second electrode 170 and the fourth electrode 175 due to the reverse tapered shape of the partition wall 140.

In this case, since the second electrode 170 is surrounded by the first partition wall 140a and the second partition wall 140b, the second electrode 170 and the fourth electrode 175 of the second sub-pixel and the common electrode of the other sub-pixel which perform the same function. It is disconnected to form an island structure. In contrast, the fourth electrode 175 is electrically connected to the common electrode of another pixel through a portion where the partition wall is not formed.

In the above-described embodiment, the partition wall 140 including the first to third partition walls 140a, 140b, 140c has been described as an example of having a “ㅂ” shape, but the partition wall 140 may be formed in another shape. Can be. The substantially “ㅂ” shaped partition wall 140 may have a “B” shaped first partition wall 140a formed in the first sub-region and a second “B” shaped partition wall formed in the second sub-region ( 140b) and the third partition wall 140c are combined. In this case, the partition wall formed in the second sub-region may be formed adjacent to the boundary 187 with the first sub-region, and may not be formed in the other direction. In this case, the second partition wall 140b may be formed in a “ㅣ” shape in a direction parallel to the boundary 187 of the second sub area in the second sub area, and the third partition wall 140c may not be formed. Can be. When the partition wall 140 is viewed as the entire pixel area, the partition wall 140 may have a “” shape.

When the barrier rib 140 including only the first and second barrier ribs 140a and 140b is formed to have a “” shape, the fourth electrode 175 of the second sub-pixel is a portion where the barrier rib 140 is not formed. The common electrode of the organic light emitting display device may be connected to the same electrodes of the other pixels through the remaining portions except for the portion bordering with the first sub-region. However, the partition wall 140 formed in the shape of “” on the first electrode 132 and the third electrode 134 surrounds the first sub-region 180, so that the second electrode 170 is formed of the second sub-pixel. Not only the fourth electrode 175 but also the common electrode of another pixel may be disconnected. In other words, unlike the fourth electrode 175, the second electrode 170 is electrically separated from the common electrode by the partition wall 140 in an island structure.

5 to 7, the power supply line 104 corresponds to the power supply VDD and 38 illustrated in FIG. 4, and the driving transistor 110 corresponds to the transistor 32 of FIG. 4. In addition, in the two organic light emitting diodes 35 and 36 of FIG. 4, the organic light emitting diode 35 adjacent to the transistor 32 corresponds to the first sub-pixel in FIGS. 5 to 7, and the remaining organic field The light emitting diode 36 corresponds to the second sub pixel.

Accordingly, the organic light emitting display device illustrated in FIGS. 5 to 7 may be modeled by the circuit of FIG. 4, and as described with reference to FIG. 4 during driving, the driving current may be reduced in size, thereby improving power consumption.

8A to 8F are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the first embodiment.

Referring to FIG. 8A, a semiconductor layer 112 including a source region 112b, a channel region 112a, and a drain region 112c of the driving transistor 110 is formed on the substrate 100.

The substrate 100 may be selected as a material for forming an element having excellent mechanical strength or dimensional stability, and may include a glass plate, a metal plate, a ceramic plate, or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, Polyimide resin, polyester resin, epoxy resin, silicone resin, fluororesin, or the like).

The semiconductor layer 112 may be made of polysilicon, but is not limited thereto and may be made of one of an oxide semiconductor or pure and impurity amorphous silicon.

In the case of polysilicon, the semiconductor layer 112 may be formed by, for example, forming an amorphous silicon layer on the substrate 100 and then crystallizing the amorphous silicon layer to form a polycrystalline or single crystal silicon layer and patterning the same. Amorphous silicon may be formed using Chemical Vapor Deposition or Physical Vapor Deposition. In addition, a process of lowering the concentration of hydrogen may be performed by dehydrogenation when or after forming amorphous silicon. Crystallization of the amorphous silicon layer may include RTA (Rapid Thermal Annealing), SPC (Solid Phase Crystallization), MIC (Metal Induced Crystallization), MILC (Metal Induced Lateral Crystallization), SGS (Super Grain Silicon), One or more of ELA (Excimer Laser Crystallization) or SLS (Sequential Lateral Solidification) can be used.

A gate insulating layer 114 is formed on the substrate 100 on which the semiconductor layer 112 is formed, and a gate electrode material is formed on the gate insulating layer 114. Next, the gate electrode material is patterned to form a gate electrode 116, a gate line 118, and a gate pad (not shown).

Next, an interlayer insulating layer 120 is formed over the entire surface of the substrate 100 including the gate electrode 116 and the gate line 118, and the gate insulating layer 114 and the interlayer insulating layer 120 are etched to form a source / drain region. Contact holes exposing 112b and 112c are formed.

Subsequently, a predetermined amount of conductive impurity ions are implanted into the semiconductor layer 112 by using the interlayer insulating layer 120 / gate insulating layer 114 and the gate electrode 116 having contact holes formed thereon as a mask, thereby forming a source in the semiconductor layer 112. The region 112b, the drain region 112c and the channel region 112a are formed. In this method, a conductive type for forming the source and drain regions 112b and 112c in the semiconductor layer 112 using the interlayer insulating film 120 / gate insulating film 114 and the gate electrode 116 having contact holes formed thereon as a mask. By performing the impurity doping process of the, do not need a separate mask for doping can reduce the manufacturing cost and simplify the process.

In the case where the driving transistor 110 is a P type, an element of Group 3, for example, boron (B), may be used as an impurity to be doped. In the case of an N type, an element of Group 5, such as phosphorus, may be used as an impurity. (P) can be used. The switching transistor 106 shown in FIG. 5 may be the same type as the driving transistor 110 or may be of the opposite type.

Subsequently, source / drain electrodes 122 and 124 connected to the source / drain regions 112b and 112c are formed through the contact hole of the interlayer insulating layer 120. In the process of forming the source / drain electrodes 122 and 124, the data line 102 and the power line 104 intersecting with the gate lines 101 and 118 and defining the pixel area may be simultaneously formed.

After forming the driving transistor 110 including the semiconductor layer 112, the gate electrode 116, and the source / drain electrodes 122 and 124, the protective layer is formed on the entire surface of the substrate 100 including the driving transistor 110. 130 is formed. In the protective layer 130, a contact hole 131 exposing the source or drain electrodes 122 and 124 is formed through an etching process.

8B, in the first sub-region 180 on the protective layer 130, the drain electrode 124 of the driving transistor 110 is contacted through the contact hole 131 to electrically contact the drain electrode 124. The first electrode 132 is formed to receive the driving current from the driving transistor 110 and is spaced apart from the first electrode 132 in the second sub-region 182 to correspond to the first electrode 132. The third electrode 134 is formed.

The first electrode 132 and the third electrode 134 may be formed of a transparent conductive material having a relatively large work function value, for example, indium tin oxide, to serve as an anode electrode when the driving transistor 110 is a P type. ITO) or indium-zinc-oxide (IZO). When the organic light emitting device is a top emission method, a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), under the first electrode 132 and the third electrode 134 to improve reflection efficiency. As a result, a reflecting plate (not shown) may be further formed.

On the other hand, when the driving transistor 110 is of the N type, the first electrode 132 and the third electrode 134 is a metal material having a relatively small work function value, such as aluminum (Al), aluminum to function as a cathode electrode It may be made of any one or more of alloys, silver (Ag), magnesium (Mg), gold (Au). When the organic light emitting device is a top emission type, when the first electrode 132 and the third electrode 134 are formed to have a thickness of, for example, 500 A (Om Strong) or more, the transmittance is almost 0%. There is no need to provide a separate reflector.

Hereinafter, the driving transistor 110 is a P type, and the first electrode 132 and the third electrode 134 serve as an anode, and the first electrode 132 and the third electrode 134 have a work function value. These relatively large transparent conductive materials, for example metal oxides such as indium tin oxide (ITO) or indium zinc oxide (IZO), combinations of metals and oxides such as ZnO: Al or SnO2: Sb, poly (3) -Methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole, and polyaniline, such as conductive polymers such as polyaniline, but the present invention is not limited thereto. As described above, the first electrode 132 and the third electrode 134 may be carbon nanotubes, graphene, silver nanowires, transparent conductive oxides, or the like.

In the deposition of the first electrode 132 and the third electrode 134, the metal on the substrate 100 may be formed by using a physical vapor deposition (PVD) method such as sputtering or e-beam evaporation. Alternatively, a conductive metal oxide or an alloy thereof may be deposited.

Referring to FIG. 8C, the barrier rib 140 is formed on the first electrode 132 and the third electrode 134 on the protective layer 130. In this case, the partition wall 140 covers the edge of the first electrode 132 except for the direction of the boundary 187 with the second sub-region 182 on the first electrode 132, and on the third electrode 134. The edge of the third electrode 134 except for the portion adjacent to the gate line 101 is covered. In addition, the partition wall 140 covers a portion of the data line 102, a portion of the gate line 101, and a portion of the power supply line 104. The partition wall 140 has a cross-sectional shape, and at least part of the partition wall 140 has a reverse tapered shape.

The partition wall 140 may be formed in various ways.

First, a negative photosensitive material is coated on the protective layer 130, the first electrode 132, and the third electrode 134 by spin coating, and a halftone mask including a blocking part, a transflective part, and a transmissive part on the photosensitive material. When the light emitting device is positioned, and exposed to light and developed, the partition wall 140 having a reverse taper shape (reverse phase structure) can be formed. In this case, one selected from the group consisting of acrylic resin, polyimide resin or polyester resin may be used as the photosensitive material.

Alternatively, the partition wall 140 having such an inverse taper structure can be formed by using an organic insulating material having negative photosensitive characteristics. Negative photosensitive material, which remains when light is developed, is strongly irradiated with light depending on the amount and time of light irradiation in the irradiated area. When light is irradiated onto the material layer, a difference in the amount of light reaching the surface and the bottom thereof occurs. Therefore, when the negative photosensitive material coated on the protective layer 130, the first electrode 132, and the third electrode 134 is developed after exposure, the cross-sectional structure of the cross-section is reverse tapered due to the difference in reaction with light. You have a structure.

Alternatively, the partition wall 140 may be formed through an over etching method. First, a barrier material layer is formed on the protective layer 130, the first electrode 132, and the third electrode 134, and a negative photosensitive material is applied onto the barrier material layer. Then, light is selectively irradiated and exposed to light using a mask (not shown) on the applied substrate 100 and developed. Thereafter, the developed negative photoresist layer and the barrier material layer are wet etched, and the wet etching process causes the non-illuminated portion of the negative photoresist layer to melt away and overetch the barrier material layer underneath, It is possible to form a trapezoidal partition wall whose length is shorter than the length of the upper side. Finally, when the negative photoresist film is removed, an inverted trapezoidal partition wall is formed.

Next, referring to FIG. 8D, the light emitting regions 184 of the first sub-region 180 and the second sub-region 182 on the first electrode 132, the third electrode 134, and the partition wall 140. A bank 150 in which an opening is formed is formed by the portion 188 and the portion 188 adjacent to the partition wall 140.

In detail, a bank material is coated on the entire surface of the first electrode 132, the third electrode 134, and the partition wall 140, and the first sub-region is formed on the first electrode 132 and the third electrode 134. An opening is formed by exposing the light emitting regions 184 and 186 of the 180 and the second sub-region 182, and an opening is formed to expose the partition wall 140. The opening through which the barrier is exposed is wider than the barrier so that the protective layer 130 is exposed at a portion 188 of the opening.

At this time, the bank 150 is formed so that the surface in contact with the organic layer (the first organic layer and the second organic layer) is tapered. In addition, the bank 150 is formed to occupy a space under the inverse tapered shape of the partition wall 140 in a surface in contact with the partition wall 140, but a part of the bank 150 is formed on a part of the upper surface of the partition wall 140. It can be formed to be located.

The first and second banks 150a and 150b and the first partition wall 140a which are in contact with the first electrode 132 are formed to overlap the ends of the first electrode 132 and the third electrode 134. The third and fourth banks 150c and 150d and the second partition wall 140b which are in contact with each other are formed to expose end portions of the third electrodes 134 under the inverse tapered structure.

Referring to 8e, an organic layer material is formed on the entire surface of the substrate 100 on which the first electrode 132, the third electrode 134, the bank 150, and the partition 140 are formed, and a metal conductive material is formed thereon. Form on the front. In this case, the first organic layer 160 and the second organic layer 162 are separated and formed on the entire surface due to the shape of the reverse tapered partition wall 140, and the metal conductive material layer 171 and the fourth electrode 175 of the second electrode are formed. This is separated. Accordingly, the first organic layer 160 formed on the first electrode 132 is formed to be spaced apart from the third electrode 134 and formed on the third electrode 134 to correspond to the first organic layer 160. 2 organic layers 162 are formed. In addition, a second electrode 170 electrically connected to the third electrode 134 is formed on the first organic layer 160, and a fourth electrode corresponding to the second electrode 170 is formed on the second organic layer 162. 175 is formed.

The organic layers 160 and 162 may have a multilayer structure including a hole injection layer 190, a hole transport layer 191, a light emitting layer 192, an electron transport layer 193, an electron injection layer 194, and the like. Without a single layer structure. In addition, the organic layer may be formed using a variety of polymer materials, rather than a solvent process such as spin coating, dip coating, doctor blading, screen printing, inkjet printing, or thermal transfer (eg, Laser Induced Thermal). Imaging (LITI)) or the like can be produced in fewer layers.

The hole injection material of the hole injection layer 190 is a material capable of well injecting holes from the anode at low voltage, and the highest occupied molecular orbital (HOMO) of the hole injection material is the HOMO of the anode material and the surrounding organic material layer. May be between. Specific examples of hole injection materials include metal porphyrine, oligothiophene, arylamine-based organics, hexanitrile hexaazatriphenylene, quinacridone-based organics, perylene-based organics, Anthraquinone, polyaniline and polythiophene-based conductive polymers, but are not limited thereto.

The hole transport layer 191 is formed on the hole injection layer 190. The hole transport layer 191 receives holes from the hole injection layer 190 and transports holes to the light emitting layer 192 positioned thereon, and serves to prevent high electron mobility, hole stability, and electrons. do. In addition to these general requirements, applications for vehicle body display require heat resistance to the device, and may be a material having a glass transition temperature (Tg) of 70 ° C. or more. Materials satisfying these conditions include NPD, NPB, spiro-arylamine compounds, perylene-arylamine compounds, azacycloheptatriene compounds, bis (diphenylvinylphenyl) anthracene, silicon germanium oxide compounds, arylamines It may be, but is not limited to, a series of organic materials (eg, silicon-based arylamine compounds), conductive polymers, block copolymers having a conjugated portion and a non-conjugated portion, and the like.

The emission layer 192 is positioned on the hole transport layer 191. The light emitting layer 192 is a layer emitting light by recombination of holes and electrons injected from the anode and the cathode, respectively, and is made of a material having high quantum efficiency. The light emitting material is a material capable of emitting light in the visible region by transporting and combining holes and electrons from the hole transport layer 191 and the electron transport layer 193, respectively, and a material having good quantum efficiency with respect to fluorescence or phosphorescence is preferable. .

As the light emitting material or a compound satisfying such condition may, for example, 8-hydroxyquinoline aluminum complex (Alq _3), carbazole-based compound; Dimerized styryl compounds, BAlq; 10-hydroxybenzo quinoline-metal compounds, benzoxazole, benzthiazole and benzimidazole-based compounds, poly (p-phenylenevinylene) (PPV) -based polymers, spiro compounds, polyfluorenes, Rubrene and the like, but are not limited thereto.

The light emitting layer 192 may dope a small amount of a gate material (dopant) into a host material of a low molecular weight or polymer so that the excitation energy of the host molecule may move to the guest molecule to emit light from a guest having high quantum efficiency.

For example, Alq ₃ for green luminescent material, 8-hydroxyquinoline beryllium salt (BAlq), DPVBi (4,4'-bis (2,2-diphenylethenyl) -1,1'-biphenyl) for blue luminescent material Series, Spiro substance, Spiro-DPVBi (Spiro-4,4'-bis (2,2-diphenylethenyl) -1,1'-biphenyl), LiPBO (2- (2-benzoxazoyl) -phenol lithium salt) , Bis (diphenylvinylphenylvinyl) benzene, aluminum-quinoline metal complexes, metal complexes of imidazole, thiazole and oxazole, and the like, perylene, and BczVBi (3,3 '[( 1,1'-biphenyl) -4,4'-diyldi-2,1-ethenediyl] bis (9-ethyl) -9H-carbazole; DSA (distrylamine) can be used by doping in small amounts. In the case of the red light emitting material, DCJTB ([2- (1,1-dimethylethyl) -6- [2- (2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H) was added to the green light emitting material. A small amount of doping, such as 5H-benzo (ij) quinolizin-9-yl) ethenyl] -4H-pyran-4-ylidene] -propanedinitrile), may be used. When the light emitting layer is formed using a process such as inkjet printing, roll coating, or spin coating, a polymer such as a polyphenylene vinylene (PPV) -based polymer or a poly fluorene may be used for the light emitting layer.

Other examples include carbazole derivatives (eg, 4,4'-bis (9-carbazolyl) biphenyl (CBP)) or triphenylamine derivatives, and oxadiazole derivatives as host materials. And 1,2,4-triazole derivatives or 1,3,5-triazine derivatives, and may be a metal complex such as an iridium complex or a platinum complex as a guest material.

The electron transport layer 193 is positioned on the emission layer 192. The electron transport layer 193 requires a material having high electron injection efficiency from the cathode positioned thereon and capable of efficiently transporting the injected electrons. For this purpose, a material having high electron affinity and electron transfer speed and excellent electron stability is used. Specific examples of the electron transport material that satisfies such conditions include, but are not limited to, an 8-hydroxyquinoline Al complex, a complex including Alq3, an organic radical compound, and a hydroxyflavone-metal complex.

The electron injection layer 194 is stacked on the electron transport layer 193. The electron injection layer 194 is a metal complex compound such as Balq, Alq ₃ , Be (bq) ₂ , Zn (BTZ) ₂ , Zn (phq) ₂ , PBD, spiro-PBD, TPBI, Tf-6P, imidazole ring It may be manufactured using a low molecular weight material including an aromatic compound having a (imidazole ring) or a boron compound (boron), but is not limited thereto.

At this time, the remaining layers except for the light emitting layer 192 may not be formed. The organic layers 160 and 162 may further include a hole blocking layer, an electron blocking layer, a light emitting auxiliary layer, a hole transport auxiliary layer, or a buffer layer, and the electron transport layer may serve as a hole blocking layer.

When the second electrode 170 and the fourth electrode 175 function as a cathode electrode, the metal conductive material layer 171 and the fourth electrode 175 of the second electrode have a relatively small work function value, for example For example, it may be made of any one or more of aluminum (Al), aluminum alloy, silver (Ag), magnesium (Mg), gold (Au).

In this case, as shown in FIG. 8E, the first organic layer 160 and the metallic material layer 171 of the second electrode are spaced apart from the third electrode 134 by a predetermined distance. In addition, the first organic layer 160 and the metal conductive material layer 171 of the second electrode are separated into island structures by the partition walls 140 on all sides.

The fourth electrode 175 is separated from the second electrode 170 by the reverse tapered second partition wall 140b formed on the third electrode 134, but has a “ㅂ” shape shown in FIG. 7A. The common electrode of the organic light emitting display device may be connected to the same electrodes of the other pixels through a portion in which the barrier ribs are not formed. However, the partition wall 140 formed on the first electrode 132 and the third electrode 134 in a “ㅂ” shape and surrounding the first sub-region 180 has a mask in forming the second electrode 170. The second electrode 170 may be disconnected from the fourth electrode 175 of the second sub pixel and the common electrode of another pixel. In other words, the second electrode 170 and the fourth electrode 175 are formed on the same layer, but the second electrode 170 of the first sub-pixel is formed on the partition wall 140 of the first sub-region 180 having an island structure. The fourth electrode 175 is electrically connected to the common electrode of another pixel through a portion where the partition wall 140 is not formed.

The organic layers 160 and 162 and the metal conductive material layers 171 and 176 of the second and fourth electrodes may be deposited by a thermal deposition method. According to the thermal evaporation method, the substrate 100 may be positioned in the chamber, and vaporized while being evaporated by applying heat to the evaporation source in a vacuum to form a uniform thin film. In the embodiment of the present invention, the partition wall 140 is formed on the substrate 100, and when the organic layer is vertically thermally deposited, the partition wall 140 serves as a mask, and thus an organic layer is formed below the partition wall 140. It doesn't work. In addition, even when the metal conductive material layer deposited on the entire surface onto the organic layer is vertically thermally deposited, since the partition wall 140 serves as a mask, the metal conductive material layer is not formed under the partition wall 140. By forming the organic layer and the metal conductive material layer by thermal evaporation in the state where the partition wall 140 is formed in this way, the first organic layer 160 and the second organic layer 162 may be separated without using a separate mask, and the second layer may be separated. The electrode 170 and the fourth electrode 175 may be separated.

Referring to FIG. 8F, the transparent conductive material of the second electrode 170 is formed on a substrate on which the metal conductive material layer 171 of the second electrode 170 and the metal conductive material layer 176 of the fourth electrode 175 are formed. 172 is formed on the front surface. In this case, the transparent conductive material 177 of the fourth electrode 175 is also formed at the same time.

In this case, the transparent conductive material layer 172 of the second electrode may be formed by chemical vapor deposition, and may also be formed by a sputtering process.

In detail, the transparent conductive material layer 172 of the second electrode may be formed by a sputtering process. Sputtering methods include DC (DirectCurrent) sputtering, RF (Radio Frequency) sputtering, etc., and one of the methods widely used for thin film deposition because the conductive material can be deposited well and the step characteristics are good. The sputtering method places atoms in the chamber, injects argon (Ar) or a reactive gas, and accelerates the electric field, causing atoms with high energy to collide with the source material and deliver energy, causing atoms to separate. This is how these atoms fly off and stick to the desired substrate surface. Therefore, in the first embodiment, a transparent conductive material, which is a material of the second electrode, may be easily formed not only on the front surface of the partition wall 140 but also under the partition wall due to the nature of the sputtering process in which particles adhere to the desired substrate surface. There is an advantage that the characteristics can be formed well.

Through this process, the transparent conductive material layer 172 of the second electrode flows into a portion (shading area) 189 below the partition wall 140b formed on the third electrode 134 and is adjacent to the third electrode 134 and electrically connected to the third electrode 134. Is connected.

The transparent conductive material may be, for example, a metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO), or a combination of a metal and oxide such as ZnO: Al or SnO 2: Sb; Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDT), polypyrrole and polyaniline, and the like. The transparent conductive material may be carbon nanotubes, graphene, silver nanowires, transparent conductive oxides, or the like.

An enlarged cross-sectional view of the boundary area between the first sub pixel and the second sub pixel of FIG. 8F is shown. The transparent conductivity of the second electrode is a shaded region 189 of the second partition wall 140b formed at the end of the third electrode 134. The material layer 172 flows in and is in electrical contact with the third electrode 134. At this time, the edge 173 of the portion of the transparent conductive material layer 172 of the second electrode flowing into the shaded region 189 has a shape in which the thickness is continuously or discontinuously reduced, and the transparent conductive material layer 172 of the second electrode is formed. ) And a cross section of the third electrode 134 may be in side contact, or a portion of the transparent conductive material layer 172 of the second electrode may be formed on the third electrode 134 to be in top contact.

Meanwhile, the structure of the second electrode 170 including the metal conductive material layer 171 and the transparent conductive material layer 172 in the manufacturing process of the first embodiment has been described. As described with reference to FIG. 8F, the transparent conductive material layer 172 of the second electrode may be deposited by sputtering. When the particles by sputtering are directly deposited onto the organic layer, damage may occur to the organic layer. In this case, the metal conductive material layer 171 of the second electrode formed in advance may function to protect the first organic layer 160 from such sputtering particles.

Meanwhile, in the above-described embodiment, the semiconductor layer 112 of the transistor is exemplarily described as being formed of polysilicon, but the present invention is not limited thereto. In more detail, the transistor may be an amorphous silicon thin film transistor, an oxide semiconductor thin film transistor, or an organic thin film transistor.

When the transistor is an oxide semiconductor thin film transistor, it may have a form of a bottom gate thin film transistor. In this case, zinc oxide (ZnO) -based oxides, such as indium gallium zinc oxide (IGZO) and zinc tin oxide (ZTO), are formed on the gate insulating film formed on the entire surface of the substrate on which the gate electrode is formed. The oxide semiconductor layer made of any one of ZIO (Zinc Indium Oxide) may be formed in an island form. The oxide semiconductor may be applied using a coating apparatus such as a spin coating apparatus, a slot coating apparatus, an ink jet printing apparatus, or a spray apparatus in addition to thermal deposition to form an oxide semiconductor material layer.

The source electrode and the drain electrode are formed on the oxide semiconductor layer so as to be spaced apart from each other. The thin film transistor having the structure in which the top surface of the oxide semiconductor layer contacts the bottom surface of the source and drain electrodes is called a top contact type thin film transistor. In this manner, when the gate electrode, the gate insulating film, the semiconductor layer, and the source / drain electrodes are sequentially added, one oxide semiconductor thin film transistor is formed.

FIG. 9 is a cross-sectional view of another manufacturing process of the organic light emitting display device according to the first embodiment, which performs the process of FIG. 8F by another method.

In the present manufacturing process example, after the process illustrated in FIGS. 8A to 8E is optionally performed, the process illustrated in FIG. 9 may be performed, which is different from the process described in FIG. 8F.

9, the second electrode 170 and the fourth electrode 175 on the substrate on which the metal conductive material layer 171 of the second electrode and the metal conductive material layer 176 of the fourth electrode 175 are formed. A transparent conductive material is formed on the entire surface. In this case, as shown in FIG. 9, the transparent conductive material of the second electrode allows the particles to be incident at an angle to the surface of the substrate 100 where thermal deposition is performed, not at right angles (see reference numeral 910). That is, the surface of the substrate 100 has a predetermined angle with respect to the movement direction 910 of the particles to be thermally deposited so that the particles to be deposited are obliquely incident on the surface of the substrate 100. Accordingly, the transparent conductive material layer 972 of the second electrode flows into the shaded region 189 under the partition wall according to the incident angle with the surface of the substrate 100.

The incident angle may be greater than an angle at which the inverse tapered side of the partition wall 140 forms the substrate 100. In this case, when the incident angle is smaller than the angle of the reverse tapered side, particles may be deposited on the side of the second partition wall 140b to electrically connect the second electrode 170 and the fourth electrode 175.

In this case, the transparent conductive material layer 972 of the second electrode may be deposited by thermal deposition or ion beam deposition. As described above, the transparent conductive material layer 972 of the second electrode 132 and the fourth electrode 134 performs a thermal deposition process in the same manner as the organic layer and the metal conductive material layers 171 and 176 of the second electrode and the fourth electrode. Since the same deposition equipment can be used to improve the process efficiency.

Both layers of the second electrode 170 in the first embodiment are electrically conductive material layers, and have an effect of lowering the sheet resistance of the second electrode 170 electrically. In addition, one through a different material and process (for example, the metal conductive material layer 171) serves to facilitate the injection of electrons into the first organic layer 160 and the other (for example, The transparent conductive material layer 172 may function to form an electrical connection path with the third electrode 134. However, different materials or processes are required to form the second electrode 170, and both layers are electrically conductive material layers that can be electrically coupled with the second electrode 170. May be used for the second electrode 170. In this case, the fourth electrode 175 may also have a structure in which one layer is omitted in the same manner as the second electrode 170.

<Second Example >

10 is a schematic cross-sectional view of an organic light emitting display device according to a second embodiment.

Referring to FIG. 10, the organic light emitting display device according to the second embodiment of the present invention is illustrated in FIG. 6 and the layer under the second electrode 1071 and the fourth electrode 1076, which illustrate the organic light emitting display device according to the first embodiment. It may have the same structure. In the organic electroluminescent device according to the second embodiment, the same components as those of the organic electroluminescent device according to the first embodiment are given the same reference numerals hereinafter.

The second electrode 1071 is formed of one conductive material layer, and is formed on the first organic layer 160 and is a shaded region 189 of the second partition wall 140b formed on the third electrode 134. Inflow is adjacent to and electrically connected to the third electrode 134. In shape, it is similar to the structure in which the metal conductive material layer of the second electrode is omitted in the embodiment of FIG. 6.

However, in the embodiment illustrated in FIG. 10, the second electrode 1071 may be a metal material having a relatively small work function value, for example, tin, magnesium, indium, calcium, sodium, lithium, aluminum, silver, or the like to function as a cathode electrode. A suitable metal of, or a suitable alloy thereof may be used or may be made of a two-layer structure such as lithium fluoride and aluminum, lithium oxide and aluminum, strontium oxide and aluminum.

The second electrode 1071 may be formed by a chemical vapor deposition method or a sputtering process. When formed in this process, as shown in FIG. 10, the second electrode 1071 is introduced into the shaded region 189 of the second partition wall 140b formed on the third electrode 134 and thus the third electrode 134. Adjacent to and electrically connected.

In addition, as described with reference to FIG. 9, the second electrode 1071 is obliquely incident to the substrate surface at a predetermined angle in the deposition process so that a part of the second electrode 1071 is formed on the second partition wall 140b. As it enters the shadow area 189, the shadow electrode 189 may be adjacent to the third electrode 134. The second electrode 971 and the fourth electrode 1076 may be deposited by thermal deposition or ion beam deposition.

<Third Example >

11 is a schematic cross-sectional view of an organic light emitting display device according to a third embodiment.

The organic electroluminescent device shown in FIG. 11 may have the same structure in the organic electroluminescent device according to the first embodiment shown in FIGS. 5 and 6 and the layer below the organic layer or the third electrode.

Referring to FIG. 11, a first electrode 1132 and a third electrode 1134 are formed on the protective layer 130, and banks of insulating structures are formed at edges of the first electrode 1132 and the third electrode 1134. 1150a, 1150b, 1150c, and 1150d or partition walls 1140a and 1140b are formed.

The second bank 1150b and the first barrier rib 1140a disposed on the first electrode 1132 are formed to overlap the ends of the first electrode 1132 such that the first electrode 1132 is formed in the second bank ( The end of the third electrode 1134 is exposed at the lower portion of the reverse tapered structure so that the second barrier rib 1140b disposed on the third electrode 1134 is not exposed to the outside of the 1150b or the first barrier rib 1140a. To be in contact with the second electrode 1170. In this case, an edge of the third electrode 1134 may further extend out of the shaded area 1187 of the second partition 1140b in the direction of the first electrode 1132.

The first organic layer 1160 and the second electrode 1170 including the emission layer are sequentially formed on the first electrode 1132 with the first bank 1150a and the second bank 1150b interposed therebetween.

The first organic layer 1160 is spaced apart from the third electrode 1134 by a predetermined distance, but the second electrode 1170 is electrically in contact with the third electrode 1134 while a part thereof contacts the third electrode 1134. Connected. At this time, the first organic layer 1160 is separated into island structures by partition walls 1140 on all sides.

The second organic layer 1162 and the fourth electrode 1175 including the emission layer are sequentially formed on the third electrode 1134 with the third bank 1150c and the fourth bank 1150d interposed therebetween. The fourth electrode 1175 is separated from the second electrode 1170 by the reverse tapered second partition 1140b formed on the third electrode 1134, but the “1” shaped partition 1140 is not formed. The portion may be connected to the same electrodes of other pixels to form a common electrode of the organic light emitting display device.

12A and 12B are cross-sectional views illustrating a manufacturing process of an organic light emitting display device according to a third embodiment.

In the example of the manufacturing process, the processes described before the formation of the organic layer or the third electrode 1134 may be applied to the embodiments described with reference to FIGS. 8A to 8D.

Referring to FIG. 12A, the passivation layer 130 is positioned on the driving transistor 110 formed on the substrate 100. The first electrode 1132 is formed on the passivation layer 130 to be in contact with the source electrode 122 or the drain electrode 124 of the driving transistor 110 through the contact hole in the first sub-region 1180. The third electrode 1134 is formed to be spaced apart from the first electrode 1132 in the two sub-regions 1182.

Banks 1150a, 1150b, 1150c, and 1150d, which are insulating structures, or partitions 1140a and 1140b are formed at edges of the first electrode 1132 and the third electrode 1134. The bank 1150 opens in the emission regions 1184 and 1186 of the first electrode 1132 and the third electrode 1134 to expose the first electrode 1132 and the third electrode 1134 and simultaneously An opening region 1188 is formed between the second partition 1140b and the second bank 1150b.

The second bank 1150b and the first barrier rib 1140a disposed on the first electrode 1132 are formed to overlap the ends of the first electrode 1132 such that the first electrode 1132 is formed in the second bank ( The end of the third electrode 1134 is exposed at the lower portion of the reverse tapered structure so that the second barrier rib 1140b disposed on the third electrode 1134 is not exposed to the outside of the 1150b or the first barrier rib 1140a. To be in contact with the second electrode 1170. In this case, the edge of the third electrode 1134 is further extended out of the shaded area 1187 of the second partition 1140b in the direction of the first electrode 1132.

Referring to FIG. 12B, an organic layer material is formed on the entire surface of the substrate on which the bank 1150 and the partition wall 1140 are formed. In this case, an opening region formed between the second partition 1140b and the second bank 1150b while overlapping a portion of the third electrode 1134 that extends further out of the shaded region 1189 of the second partition 1140b ( 1188 A shadow mask 1220 covering a portion is used.

When the organic layer material is deposited 1210 on the entire surface using the shadow mask 1220, the first organic layer 1160 and the second organic layer 1162 are separated from each other with the mask 1220 interposed therebetween. In addition, the mask 1220 covers a portion of the third electrode 1134 that extends out of the shaded region 1189 of the second partition 1140b so that the first organic layer 1160 does not overlap the third electrode 1134. The first organic layer 1160 is spaced apart from the third electrode 1134 by a portion of the opening region 1188 where the bank and the partition wall are not formed between the first electrode 1132 and the third electrode 1134. Is formed.

In general, when the red, green, and blue pixels are separately formed, the masks described above are not required as separate processes because they are formed by using separate masks for each color.

After the first organic layer 1160 and the second organic layer 1162 are formed by depositing the organic layer material on the entire surface using the mask 1220, a metal conductive material is formed on the entire surface, as shown in FIG. 12C. At this time, the second electrode 1170 and the fourth electrode 1175 are separated on the front surface due to the shape of the reverse tapered second partition wall 1140b.

In addition, the edge of the third electrode 1134 extends further out of the shaded region 1189 of the partition wall 1140b in the direction of the first electrode 1132, so that the second electrode 1170 is connected to the edge of the third electrode 1134. Some overlap is formed. Accordingly, a part of the second electrode 1170 is in contact with the third electrode 1134 on the third electrode 1134 and is electrically connected to the third electrode 1134.

The organic layer described with reference to FIG. 12B and the metal conductive material layer described with reference to FIG. 12C may be deposited by a thermal deposition method. When the metal conductive material layer formed on the organic layer is formed by the sputtering process, a problem may occur that the particles by sputtering damage the organic layer. However, as described above, when both the organic layer and the metal conductive material layer are deposited by the thermal evaporation method, damage to the organic layer due to sputtered particles does not occur.

<4th Example >

13 is a schematic cross-sectional view of an organic light emitting display device according to a fourth embodiment.

The organic light emitting diode illustrated in FIG. 13 may have the same structure in the layer below the barrier rib / bank and the organic light emitting diode according to the first exemplary embodiment illustrated in FIGS. 5 and 6.

Referring to FIG. 13, a first electrode 1332 and a third electrode 1334 are formed on the protective layer 130, and banks of insulating structures are formed at edges of the first electrode 1332 and the third electrode 1334. 1350a, 1350b, 1350c, and 1350d are formed. In detail, a first electrode 1332 of the first subpixel and a third electrode of the second subpixel may be disposed at a boundary between each of the first subregion 1380 and the second subregion 1138 in which one pixel region is divided into two. Banks 1350a, 1350b, 1350c, and 1350d are positioned as an insulating structure formed on the edge of 1334.

The banks 1350a, 1350b, 1350c, and 1350d open in the emission regions 1342 and 1386 of the first electrode 1332 and the third electrode 1334 to expose the first electrode 1332 and the third electrode 1334. At the same time, the opening region 1388 is formed outside the first electrode 1332 and the third electrode 1334 in the direction in which the second partition 1340b is formed.

The first and second banks 1350a and 1350b formed in the first sub-region 1380 are positioned on a part of the protective layer 130 and a part of the first electrode 1332, and the edges of the first electrode 1332. It is formed in a shape surrounding the. In addition, the third bank 1450c formed in the second subregion 1382 is formed such that the lower surface is positioned on the third electrode 1334 in a direction forming the boundary 1387 with the first subregion, and other directions. The fourth bank 1350d and the fifth bank (not shown) in Essau are positioned on a part of the protective layer 130 and a part of the third electrode 1334 to surround the edge of the third electrode 1334. Is formed.

The partition 1340 is located on the bank 1350. In detail, lower surfaces of the partitions 1340a and 1340b are positioned in the upper surface of the bank 1350. In addition, the first partition wall 1340a is formed in a direction where the first subregion 1380 does not form a boundary 1387 with the second sub area 1382, and the second partition wall 1340b is the second sub area 1138. ) May be formed in a direction bordering the first sub-region 1380 to form the same or substantially the same arrangement as the planar arrangement of the partition wall 140 in the organic light emitting device according to the first embodiment.

The partitions 1340a and 1340b have a structure in which at least part of the partitions 1340a and 1340b are reverse tapered. On the first electrode 1332, the first and second banks 1350a and 1350b surround the edge (border) of the first electrode 1332, but on the third electrode 1334, the third bank 1350c is the first sub. As the lower surface is positioned on the third electrode 1334 in the direction forming the region 1387, the third bank 1350c is disposed in the direction in which the third electrode 1334 forms the boundary 1387 with the first sub-region. It forms a shape extending to the outside. In addition, an end portion of the third electrode 1334 extending outside the third bank 1350c is located in the shaded region 1389 of the second partition 1340b.

The first organic layer 1360 and the second electrode 1370 including a light emitting layer are sequentially formed on the first electrode 1332 with the first bank 1350a and the second bank 1350b interposed therebetween.

Although the metallic material layer 1372 of the first organic layer 1360 and the second electrode 1370 is spaced apart from the third electrode 1334 by a predetermined distance, the transparent conductive material layer 1372 of the second electrode 1370 ) Flows into the shaded area 1389 of the second partition 1340b formed on the third electrode 1334 and is electrically connected to the third electrode 1334. In this case, the metal material layers 1372 of the first organic layer 1360 and the second electrode 1370 are separated into island structures by barrier ribs 1340 on all sides.

The second organic layer 1362 and the fourth electrode 1375 including the light emitting layer are sequentially formed on the third electrode 1334 with the third bank 1350c and the fourth bank 1350d interposed therebetween. The second electrode 1370 and the fourth electrode 1375 are formed on the same layer, but the second electrode 1370 of the first sub pixel is island-shaped by the partition wall 1340 and electrically separated from the common electrode. The fourth electrode 1375 is electrically connected to the common electrode of another pixel through a portion where the partition wall 1340 is not formed.

The organic layer 1381 formed on the second partition wall 1340b is not connected to the first organic layer 1360 and the second organic layer 1362, and the electrode layers 1382 and 1383 formed on the second partition wall 1340b. The silver is not connected to the second electrode 1370 and the fourth electrode 1375 to form a dummy layer in an isolated form.

14A to 14D are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the fourth embodiment.

In the example of the manufacturing process, the processes up to the step of forming the first electrode and the third electrode may be equally applied to the embodiments described with reference to FIGS. 8A to 8B.

Referring to FIG. 14A, the passivation layer 130 is positioned on the driving transistor 110 formed on the substrate 100. The first electrode 1332 is formed on the passivation layer 130 to be in contact with the source electrode 122 or the drain electrode 124 of the driving transistor 110 through the contact hole in the first subregion 1380. The third electrode 1334 is formed to be spaced apart from the first electrode 1332 in the sub region 1382.

Banks 1350a, 1350b, 1350c, and 1350d, which are insulating structures, are formed at edges of the first electrode 1332 and the third electrode 1334. The bank 1350 is formed by opening a partial region with respect to the bank material layer applied to the entire surface. The light emitting regions 1342 and 1386 of the first subpixel and the second subpixel are opened, and the second partition 1340b is opened. An opening region 1388 is formed around the first electrode 1332 and the third electrode 1334 in the direction in which the first electrode 1332 and the third electrode 1334 are formed.

In the first sub-region 1380, the first and second banks 1350a and 1350b are formed on a portion of the protective layer 130 and the edge of the first electrode 1332 to surround the edge of the first electrode 1332. Form in shape. In addition, the third bank 1450c formed in the second subregion 1382 may be formed such that the lower surface thereof is positioned on the third electrode 1334 in a direction bordering the first subregion 1380. The fourth bank 1350d and the fifth bank (not shown) in the direction are formed on a part of the protective layer 130 and the edge of the third electrode 1334 to surround the edge of the third electrode 1334. To form.

Referring to FIG. 14B, the partition wall 1340 is formed on the bank 1350. The barrier rib 1340 may apply a negative photosensitive material to the entire surface of the substrate 100 on which the banks 1350 are formed, as described with reference to FIG. 8C, and the lower surface may be more etched according to light transmittance or etching intensity. It can form by a method. At this time, the partition wall 1340 is formed in a shape in which at least a portion of the side tapered.

The first partition 1340a is formed in a direction that does not border the second subregion 1138 in the first subregion 1380, and the second partition 1340b is the first sub in the second subregion 1138. It is formed in the direction bordering with the area 1380.

Looking at the shape of the bank 1350 and the partition wall 1340 with the first electrode 1332 and the third electrode 1334, the first / second banks 1350a and 1350b are formed on the first electrode 1332. The lower surface of the electrode 1332 surrounds the edge (border) of the electrode 1332, but the third bank 1350c borders the first sub-region 1380 on the third electrode 1334. As a result, the third electrode 1334 extends to the outside of the third bank 1350c in a direction bordering the first sub-region 1380. In addition, an end portion of the third electrode 1334 extending outside the third bank 1350c is located in the shaded area 1389 of the second partition 1340b.

Referring to FIG. 14C, an organic layer material is formed on a front surface of a substrate 100 on which a bank 1350 and a partition wall 1340 are formed, and a metal conductive material is formed on a front surface thereof. At this time, the first organic layer 1360 and the second organic layer 1136 are separated from each other and formed on the front surface due to the shape of the reverse tapered partition wall 1340, and the metal conductive material layer 1372 and the fourth electrode of the second electrode 1370 are formed. 1375 are separated.

The metal conductive material layer 1371 of the first organic layer 1360 and the second electrode 1370 is spaced apart from the third electrode 1334 by a predetermined distance. In this case, the metal conductive material layers 1372 of the first organic layer 1360 and the second electrode 1370 are separated into island structures by the partition walls 1340 on all sides.

The fourth electrode 1375 is separated from the second electrode 1370 by an inversely tapered second partition wall 1340b formed on the third electrode 1334, but the same electrodes of other pixels are formed through the part where the partition wall is not formed. The common electrode of the organic light emitting display device may be connected to the organic light emitting display device.

The organic layers, the metal conductive layers 1371 and 1376 of the second electrode 1370 and the fourth electrode 1375 may be deposited by a thermal deposition method. In the case of thermally evaporating the organic layer, since the partition 1340 serves as a mask, the organic layer is not formed below the partition 1340. In addition, in the case of thermally depositing a metal conductive material layer deposited on the entire surface of the organic layer, since the barrier rib 1340 serves as a mask, the metal conductive material layer is not formed under the barrier rib 1340. By forming the organic layer and the metal conductive material layer by thermal evaporation in the state where the partition wall 1340 is formed in this manner, the first organic layer 1360 and the second organic layer 1362 can be separated without using a separate mask and also the second The electrode 1370 and the fourth electrode 1375 may be separated.

Referring to FIG. 14D, the transparent conductive material layer 1372 of the second electrode 1370 is formed on the substrate 100 on which the metal conductive material layer 1372 and the fourth electrode 1375 of the second electrode 1370 are formed. Form on the front. In this case, the transparent conductive material layer 1377 may also be formed on the fourth electrode 1375.

In this case, the transparent conductive material of the second electrode 1370 may be formed by chemical vapor deposition or by a sputtering process. For example, when the transparent conductive material is formed by a sputtering process, the deposition particles may be deposited by adhering to a desired surface of the substrate 100. When the deposition is performed in this manner, the barrier rib 1340 as well as the front surface of the substrate 100 may be deposited. Particles can be deposited easily up to the bottom of).

Through this process, the transparent conductive material layer 1372 of the second electrode 1370 flows into a portion (shading area) below the partition wall 1340 formed on the third electrode 1334 and is adjacent to the third electrode 1334. Electrically connected.

<5th Example >

FIG. 15 is a schematic cross-sectional view of an organic light emitting display device according to a fifth embodiment, and FIG. 16 is a plan view showing only first and third electrodes and banks of an organic light emitting display device according to a fifth embodiment.

15 and 16 may be applied to the embodiments described with reference to FIGS. 5 and 6.

Referring to FIG. 15, when compared with the first embodiment (refer to FIGS. 5 and 6), the fifth embodiment borders the first subregion 1580 and the second subregion 1582 on the first electrode 1532. The bank is not formed in the direction which forms (1587).

Specifically, the first electrode 1532 is formed on the passivation layer 130 in the first subregion 1580, and the third electrode is spaced apart from the first electrode 1532 in the second subregion 1852. (1534) is formed.

Banks 1550a, 1550c, 1550d, 1550e, and 1550f, which are insulating structures, or partitions 1540a and 1540b are formed at edges of the first electrode 1532 and the third electrode 1534, and the second sub-region 1652 is formed. The third bank 1550c, the fourth bank 1550d, and the fifth bank 1550e are formed in all directions of the third electrode 1534. However, in the first sub-region 1580, the first bank 1550a is not formed in a direction forming the boundary 1587 with the second sub-region 1852, and thus has a “-” shape on the plan view of FIG. 16. It is coming true.

The first and second organic layers 1560 and 1562 and the first and second organic layers 1560 and 1562 are formed on the first and third electrodes 1534 and 1534 on which the banks 1550a, 1550c, 1550d, 1550e, and 1550f and the partitions 1540a and 1540b are formed. The second / fourth electrodes 1570 and 1575 are sequentially formed.

Compared to the embodiment described with reference to FIGS. 5 and 6, since there is no bank on one side of the first electrode 1532, the first electrode 1532 is extended to a portion where the bank is removed, so that the first electrode of the first embodiment. 132 may be formed with a larger area. In addition, a portion of the bank formed on the first electrode 1532 is removed, thereby extending the light emitting region 1584 of the first sub-pixel. As a result, according to the fifth exemplary embodiment of FIGS. 15 and 16, the first electrode 1532 is widened and some banks are removed to broaden the light emitting area.

As described above, the light emitting area of the first sub pixel is widened, so that the area of the first electrode 1532 and the third electrode 1534 are balanced to balance the light emitting area of the first sub pixel and the second sub pixel. The first electrode 1532, the third electrode 1534, the partition wall 1540, and the like may be formed such that the area of the first electrode 1532 is substantially the same.

17A to 17C are cross-sectional views illustrating a process of manufacturing the organic light emitting display device according to the fifth embodiment.

Referring to FIG. 17A, the passivation layer 130 is positioned on the driving transistor 110 formed on the substrate 100. The first electrode 1532 is formed on the passivation layer 130 to contact the source electrode 120 or the drain electrode 124 of the driving transistor 110 through the contact hole in the first sub-region 1580. The third electrode 1534 is formed to be spaced apart from the first electrode 1532 in the two sub-regions 1582.

The partition wall 1540 is formed on the first electrode 1532 and the third electrode 1534. In this case, the partition wall 1540 is formed in a shape in which at least a portion of the side surface is reverse tapered.

The bank 1550 is formed by opening a partial region with respect to the material layer of the bank 1550 applied to the front surface on the substrate 100 on which the barrier rib 1540 is formed, and emitting light of the first subpixel and the second subpixel. The regions 1584 and 1586 are opened, and the opening regions 1588 are formed outside the first electrode 1532 and the third electrode 1534 in the direction in which the partition wall 1540 is formed. In this case, the light emitting region 1584 of the first subpixel and the opening region 1588 at the boundary between the two subregions are connected to each other so that the first electrode 1532 does not have a bank at the boundary with the second subregion 1582. Form it.

Referring to FIG. 17B, an organic layer material is formed on a front surface of a substrate 100 on which banks 1550a, 1550c, and 1550d and a partition wall 1540 are formed, and a metal conductive material is formed on a front surface thereof. At this time, the first organic layer 1560 and the second organic layer 1562 are separated and formed on the entire surface due to the shape of the reverse tapered partition wall 1540, and the metal conductive material layer 1571 and the fourth electrode of the second electrode 1570 are formed. The electrode 1575 is separated.

The metal layer 1571 of the first organic layer 1560 and the second electrode 1570 is spaced apart from the third electrode 1534 by a predetermined distance. In this case, the metal conductive material layers 1571 of the first organic layer 1560 and the second electrode 1570 are separated into island structures by the partition walls 1540 on all sides.

The fourth electrode 1575 is separated from the second electrode 1570 by the reverse tapered partition 1540 formed on the third electrode 1534, but is connected to the same electrodes of other pixels through a portion in which the partition is not formed. The common electrode of the organic light emitting display device can be formed.

Since the bank is not formed on the first electrode 1532 in the boundary direction between the two sub-regions, the organic layer and the metal conductive material layer are applied to the entire surface, so that the metal conductive material layers of the first organic layer 1560 and the second electrode 1570 are applied. When 1571 is formed, the metal conductive material layer 1571 of the first organic layer 1560 and the second electrode 1570 is formed while directly surrounding the edge of the first electrode 1532.

The organic layer and the metal conductive material layer may be formed by thermal evaporation in a state where the barrier rib 1540 is formed to separate the first organic layer 1560 and the second organic layer 1562 without using a separate mask, and may also separate the second electrode. 1570 and the fourth electrode 1575 may be separated.

Referring to FIG. 17C, the second electrode 1570 may be formed on the substrate 100 on which the metal conductive material layer 1571 of the second electrode 1570 and the metal conductive material layer 1576 of the fourth electrode 1575 are formed. A transparent conductive material layer 1572 is formed over the entire surface. In this case, the transparent conductive material layer 1577 may also be formed on the fourth electrode.

In this case, the transparent conductive material layer 1572 of the second electrode 1570 may be formed by chemical vapor deposition, or by a sputtering process. Through this process, the transparent conductive material layer 1572 of the second electrode 1570 flows into a portion (shading area) below the partition wall 1540 formed on the third electrode 1534 and is adjacent to the third electrode 1534. Electrically connected.

<The sixth Example >

FIG. 18 is a schematic cross-sectional view of an organic light emitting display device according to a sixth embodiment, and FIG. 19 is a plan view showing only a first / third electrode and a bank of the organic light emitting display device according to the sixth embodiment.

The organic electroluminescent device illustrated in FIGS. 18 and 19 has a boundary 1587 between the first subregion and the second subregion on the third electrode 1534 as compared with the organic electroluminescent device illustrated in FIGS. 15 and 16. The third bank 1550c formed in FIG. 9 is removed. In this regard, the embodiments described with reference to FIGS. 5, 6, 16, and 17 may be applied to the organic light emitting diodes illustrated in FIGS. 18 and 19.

Referring to FIG. 19, in comparison with FIG. 15, the third bank formed on the third electrode 1834 in the direction of the boundary 1887 between the first subregion 1880 and the second subregion 1882 is removed. . As a result, the light emitting region 1886 of the second sub-pixel is widened by the area where the third bank is formed.

In addition, in the cross-sectional structure of FIG. 19, the first organic layer in which the organic layer 1882 and the conductive material layers 1882 and 1883 formed on the second partition 1840b formed in the second subregion 1882 are formed in the emission region. 1860, the second organic layer 1862, the second electrodes 1870 (1871 and 1872), and the fourth electrode 1775 (1876 and 1877) are disconnected to form a dummy layer.

When a part of the bank formed in the second sub region 1882 is removed in this manner, the light emitting region 1886 of the second sub pixel is widened. Accordingly, in order to balance the light emitting area 1884 of the first sub-pixel and the light emitting area 1866 of the second sub-pixel, the areas of the first electrode 1832 and the third electrode 1834 may be adjusted.

<7th Example >

20 is a schematic plan view of an organic light emitting display device including an organic light emitting display device according to a seventh embodiment.

Embodiments of the organic light emitting display device described with reference to FIGS. 5 to 19 may be applied to the organic light emitting display device illustrated in FIG. 20. Here, the description will focus on the features that are distinguished from other embodiments.

The organic light emitting display device may include a substrate 100, a plurality of wiring lines positioned on the substrate 100, and an organic light emitting display device.

A gate line 2002 is formed on the substrate 100 to transfer a gate signal in a first direction (a horizontal direction in FIG. 20). The data lines 2004 and 2006 that transmit data signals in the second direction (the vertical direction in FIG. 20) and the power lines 2008 and 2010 that supply high voltage power are formed to be spaced apart from each other. In this case, the power lines 2008 and 2010 may be formed to be parallel to the gate line 2002. The gate line 2002 extends to the gate pad (not shown) in the horizontal direction on the substrate 100, and the data lines extend to the data pad (not shown) in the vertical direction on the substrate 100.

The organic electroluminescent device includes electrodes and organic layers in each pixel region defined as the intersection of the gate line 2002 and the data line 2004 and 2006 and according to the current supplied from the thin film transistor formed on the substrate 100. Each pixel which emits light is included.

The organic light emitting display device includes two organic light emitting diodes having different pixel structures. The first organic electroluminescent element positioned in the pixel shown on the left side in the plan view of FIG. 20 has a single pixel structure including a single light emitting region, and the second organic light emitting element positioned in the pixel shown in the right side of the plan view of FIG. 20. The electroluminescent device may be modeled by the circuit described with reference to FIG. 4 in a structure including a first sub pixel and a second sub pixel.

In the first organic light emitting diode, a gate electrode 2021a is connected to the gate line 2002, one end 2021b is connected to the first data line 2004, and the other end 2021c is connected to the first node 2020. The first switching transistor 2021 and the first node 2020 may include a gate electrode 2030 connected to the first driving transistor 2023 and one end connected to the first power line 2008.

In the second organic electroluminescent device, a gate electrode 2024a is connected to the gate line 2002, one end 2024b is connected to the second data line 2006, and the other end 2024c is connected to the second node 2022. The second switching transistor 2024 and the second node 2022 may include a gate electrode 2032 connected to the second driving transistor 2025 and one end connected to the second power line 2010. In addition, the second organic light emitting display device includes two subpixels, each of which includes a first electrode and a second electrode functioning as an anode electrode and a cathode electrode, and between the first electrode and the second electrode. It includes a first organic layer including a light emitting layer. The second sub-pixel includes a second organic layer including a third electrode and a fourth electrode, each of which functions as an anode electrode and a cathode electrode, and a light emitting layer between the third electrode and the fourth electrode.

The structures of the transistors and their connection relationships shown in FIG. 20 are merely examples, and the present invention is not limited thereto and may be appropriately changed in design during manufacture.

In addition, the first electrode of the first sub-pixel is electrically connected to the other end of the second driving transistor 2025 to receive the driving current, and the second electrode is electrically connected to the third electrode of the second sub-pixel. The first sub pixel and the second sub pixel are connected in a series structure. The fourth electrode of the second sub-pixel is connected to the common electrode of the other pixel and discharges the driving current.

According to the above-described pixel structure, if the first pixel has a structure composed of a single organic light emitting diode described with reference to FIG. 1, the second pixel may have a structure including two organic light emitting diodes described with reference to FIG. 4. Have

Accordingly, as described with reference to FIG. 4, the driving current supplied to the second pixel under the same luminance condition may be 1/2 of the driving current supplied to the first pixel.

The relationship between the driving current flowing between the drain electrode and the source electrode in the driving thin film transistor and the current driving capability or the width of the channel region of the transistor is as follows.

<Equation 5>

I _DS = K (V _{GSV TH} ) ²

K = 1/2 u _eff C _G W / L

In Equation 5, I _DS is a driving current, K is a current driving capability, V _GS is a voltage between a gate and a source electrode, and V _TH is a threshold voltage. In the transistor, u _eff is the field effect electron mobility, C _G is the capacitance per unit area of the gate electrode in the channel region, and W and L are the width and length of the channel.

Referring to Equation 5, it can be seen that the driving current I _DS is proportional to the current driving capability K, and this current driving capability K is proportional to the width W of the transistor channel.

In the embodiment shown in FIG. 20, the gate electrode 2030 of the first driving transistor 2023 extends as long as the length of the pixel electrode 2050 in a direction parallel to the first power line 2008. In addition, although not shown on the screen, the channel region of the semiconductor layer is formed to a size corresponding to the size of the gate electrode 2030. The parallel to the first power supply line 2008 is the width W direction of the channel region, and the transistor structure shown in FIG. 20 is intended to increase the current driving capability K by widening the width W of the channel region.

Referring to FIG. 20, the gate electrode 2032 of the second driving transistor 2025 is formed to extend by the length of the first sub pixel 2052 electrode in a direction parallel to the second power line 2010. In addition, although not shown on the screen, the channel region of the semiconductor layer is formed to have a size corresponding to the size of the gate electrode 2032.

When the channel region width W of the first driving transistor 2023 and the second driving transistor 2025 is measured, the channel region width W of the second driving transistor 2025 is equal to that of the first driving transistor 2023. It can be seen that it is approximately 1/2 narrower than the width of the channel region. Due to the small channel region width, the current driving capability of the second driving transistor 2025 also has a value corresponding to approximately 1/2 of the current driving capability of the first driving transistor 2023.

As described above, since the driving current value of the second pixel corresponds to 1/2 of the driving current value of the first pixel, the current driving capability of the second driving transistor 2025 is the current driving capability of the first driving transistor 2023. Even if smaller than the capability value, the two pixels can exhibit the same driving capability.

In the second pixel, one pixel area is divided into two to form a first sub pixel and a second sub pixel, thereby forming a non-light emitting area at a boundary between the two sub pixels. At this time, as shown in FIG. 20, the light emission area is increased by the reduced area while reducing the channel area width and gate electrode size of the driving transistor which supplies the driving current to the first sub pixel, thereby increasing the ratio between the boundary of the two sub pixels. The problem of increasing the light emitting area can be solved.

In the above description, the embodiment of the organic light emitting display device has been described. Hereinafter, an embodiment of the organic light emitting display device will be described. Embodiments of the aforementioned organic electroluminescent device may be applied to embodiments of the organic light emitting display device described below. Therefore, the following description will focus on the parts that are different from the embodiments of the above-described organic electroluminescent device.

21 is a system configuration diagram of an organic light emitting display device according to an embodiment.

Referring to FIG. 21, an organic light emitting display device according to an embodiment may include a timing controller 2110, a data driver 2130, a gate driver 2120, and a display panel 2140.

The timing controller 2110 controls the data driver 2130 based on external timing signals such as the vertical / horizontal synchronization signals Vsync and Hsync, the image signal RGB, and the clock signal CLK input from the host system 2100. The data control signal DCS for controlling and the gate control signal GCS for controlling the gate driver 2120 are output. In addition, the timing controller 2110 converts the image signal RGB input from the host system 2100 into a data signal format used by the data driver 2130 to convert the converted image signal R'G'B 'into data. It may be supplied to the driver 2130. For example, the timing controller 2110 may supply the converted image signal R'G'B 'to the data driver 2130 according to the resolution or pixel structure of the display panel 2140. Here, the video signal RGB and the converted video signal R'G'B 'are also referred to as video digital data, video data, or data.

The data driver 2130 may receive the converted image signal R'G'B 'in response to the data control signal DCS and the converted image signal R'G'B' input from the timing controller 2110. The signal is converted into an analog pixel signal (data signal or data voltage), which is a voltage value corresponding to the gray scale value, and supplied to the data line.

The gate driver 2120 sequentially supplies a scan pulse (a gate pulse or a gate on signal) to the gate line in response to the gate control signal GCS input from the timing controller 2110.

The display panel 2140 defines a plurality of pixels at intersections of the plurality of gate lines GL1 to GLm and the plurality of data lines DL1 to DLn, and each pixel includes an anode, a cathode, and an organic layer. At least one organic light emitting diode is connected, and the organic layer included in each organic light emitting diode may include at least one light emitting layer or a white light emitting layer among red, green, blue, and white light emitting layers.

<The eighth Example >

FIG. 22 is a partially enlarged plan view of an organic light emitting display device according to an eighth embodiment showing pixels P1, P2, and P3 of FIG. 21.

Referring to FIG. 22, gate lines GLy, data lines DLx to DLx + 2, and high potential voltage lines VDDx to VDDx + 2 for supplying high potential voltages are formed in each pixel. In addition, a switching transistor is formed in each pixel between the gate line GL and the data line DL, and a driving transistor between the source electrode or the drain electrode of the switching transistor, the high potential voltage line VDD, and the organic light emitting diode. Is formed.

At least one of the pixels P1 2210, P2 2220, and P3 2230 may be an organic light emitting display device according to an exemplary embodiment of the present invention described with reference to FIGS. 2 to 20. For convenience of description, in FIG. 22, only the P3 2230 pixel is divided into two sub-pixels, but the P1 2210 or P2 2220 pixel may also be divided into two or more sub-pixels.

Referring to FIG. 22, the pixels P1 2210 and P2 2220 are a single pixel structure including a driving transistor and two electrodes and an organic layer formed between the two electrodes, and include one organic light emitting diode. have. In contrast, the P3 2230 pixel has an organic light emitting display device according to an exemplary embodiment of the present invention, and includes two sub pixels, and each sub pixel has a structure in which they are connected in series.

Looking at the driving of each pixel, the pixels P1 2210 and P2 2220 control the voltage between the gate electrode and the source electrode of the driving transistor to supply the driving current to the organic light emitting diode of the single pixel. In the P1 2210 and P2 2220 pixels, the organic light emitting diode emits light according to the driving current.

In the case of the P3 2230 pixel, the driving current is first supplied to the organic light emitting diode of the first sub-pixel 2230a connected to the drain electrode by controlling the voltage between the gate electrode and the source electrode of the driving transistor. The driving current is again supplied to the organic light emitting diodes of the second sub-pixels 2230b connected in series so that the organic light emitting diodes of the first sub-pixels 2230a and the second sub-pixels 2230b emit light. In this case, as described with reference to FIG. 4, the magnitude of the driving current supplied to the organic light emitting display device is half of that when the P3 2230 is composed of a single pixel.

As a result, in P1 2210, P2 2220, and P3 2230 pixels, only P3 2230 improves power consumption. Such a structure can be particularly applied to an organic light emitting display device using red, green, and blue pixels. As a specific example, P1 2210 is a red pixel R including a red light emitting layer, P2 2220 is a green pixel G including a green light emitting layer, and P3 2230 includes a blue light emitting layer. It can be applied to the case of the blue pixel (B). When forming the red pixel R, the green pixel G, and the blue pixel B, the red, green, and blue light emitting layers of the organic layer are formed in the red pixel R, the green pixel G, and the blue pixel B. RGB may be patterned by a deposition process using separate shadow masks or fine metal masks each having a position corresponding to a). In addition to the deposition process using shadow masks with the RGB patterning method, solvent processes, such as spin coating, dip coating, doctor blading, screen printing, inkjet printing or thermal transfer, using various polymer materials, are not deposited. You can use a method such as judicial.

In general, it is known that the luminous efficiency of blue pixels is low. In this case, P3 2230 consumes more power than other pixels, resulting in an imbalance in power consumption between pixels. In addition, only the life of the P3 2230 portion may be shortened rapidly by heat generation due to excessive power consumption.

In this case, when P1 2210 and P2 2220 include a single organic light emitting diode, and P3 2230 includes two or more organic light emitting diodes according to an embodiment of the present invention, at P3 2230 Since the power consumption of R &lt; 1 &gt; is relatively reduced, it is possible to solve the imbalance of power consumption between pixels, and to improve a certain pixel defect phenomenon due to the imbalance of life.

In the above-described embodiment, the case in which the pixel corresponding to the P3 2230 is a blue pixel has been described. However, the present invention is not limited thereto, and other color pixels (red or green pixels) may vary depending on the characteristics of the device used in the emission layer. The luminous efficiency of may be relatively low. In this case, a pixel having low luminous efficiency may be applied to the P3 2230 pixel.

In general, it is preferable to use phosphorescent materials having excellent luminous efficiency because triplet excitons contribute to the emission of red pixels (R), green pixels (G), and blue pixels (B), but the phosphors have thermal stability or durability. There is a short life issue off this. In particular, the blue phosphor material uses the same driving current as the phosphors of different colors, and in particular, the lifetime is short, so that the blue phosphor material is not actually used, and the blue phosphor material is used.

The organic light emitting display device according to the eighth embodiment can reduce power consumption by forming two sub-pixels connected in series to one pixel area, so that a pixel having a different color may be realized even when a blue pixel is formed of a blue phosphor having the same luminance. It can maintain the same or longer life.

Meanwhile, as described with reference to the first to seventh embodiments, in the eighth embodiment, the fourth electrode of the second sub-pixel 2230b of the P3 pixel is electrically separated from the second electrode of the first sub-pixel 2230a. However, the common electrode may be formed while being electrically connected to one of two electrodes of the other pixels P1 and P2.

In FIG. 22, P1 2210, P2 2220, and P3 2230a and 2330b may constitute a unit pixel. The unit pixel refers to one pixel in image processing. For example, red, green, and blue pixels may produce natural colors by combining respective emission colors. The three pixels may be defined as unit pixels. In an embodiment to be described later, at least one pixel of P1, P2, P3, and P4 may be combined to form one unit pixel.

<Ninth Example >

FIG. 23 is a partially enlarged plan view of an organic light emitting display device according to a ninth embodiment showing pixels P1, P2, and P3 of FIG. 21.

Referring to FIG. 23, as in FIG. 22, gate lines GLy, data lines DLx to DLx + 2, high potential voltage lines VDDx to VDDx + 2, switching transistors, and driving transistors are formed in each pixel. .

In FIG. 23, all of the pixels P1 2310, P2 2320, and P3 2330 may be applied to the organic light emitting diode according to the exemplary embodiment of the present invention described with reference to FIGS. 2 to 20.

Referring to FIG. 23, all of the pixels P1 2310, P2 2320, and P3 2330 are applied to the organic light emitting diode according to an exemplary embodiment of the present invention, and thus, for the two sub pixels P1, 2310a, 2310b, For P2, for 2320a, 2320b, and P3, 2330a, 2330b are included, and each sub-pixel has a structure connected in series.

Looking at the driving of each pixel, each pixel first supplies a driving current to the organic light emitting diode of the first sub-pixel connected to the drain electrode by controlling the voltage between the gate electrode and the source electrode of the driving transistor. The driving current is again supplied to the organic light emitting diodes of the second sub-pixels connected in series so that the organic light emitting diodes of the first and second sub-pixels emit light. In this case, as described with reference to FIG. 4, the magnitude of the driving current supplied to the organic light emitting display device is half of that when each pixel is composed of a single pixel.

When the organic light emitting display device according to the embodiments is applied to all the pixels as described above, all the pixels can uniformly improve the power consumption. This structure is particularly applicable to the embodiment in which all the pixels are made of the same light emitting layer. As a specific example, it may be applied to the case where P1 2310, P2 2320, and P3 2330 are all white pixels W. FIG.

The white pixel W may implement the white light emission by using two-component light emission such as red and blue or green yellow and blue by making the emission layers complementary to each other, or by using three-component red and blue (RGB) light emission. Accordingly, when the P1 2310a, 2410b, P2 2320a, 2420b, and P3 2330a, 2330b pixels are white pixels, the first organic layer of the first subpixel of each pixel and the second organic layer of the second subpixel of each pixel may be used. Silver may include a light emitting layer including red, green, and blue light emitting materials, or may include a light emitting layer including blue and green yellow light emitting materials.

In order to form the white pixel W, bi- or tri-component light emitting layers are deposited on the entire surface, so that pixels may be formed without RGB patterning using a separate shadow mask. In this case, the natural color may be realized by treating the white light generated by the emission of the white pixel W with a color filter or a color conversion material (for example, a red, green, or blue filter) formed inside or outside the pixel.

In other words, the white pixel W is formed by depositing each layer between the anode and the cathode without a mask when forming the organic layer, and forming the organic layers including the organic light emitting layer in a vacuum state by sequentially changing the components thereof.

In the first sub-pixel, the white pixel is formed of blue between the first electrode and the second electrode facing each other, the charge generation layer formed between the first electrode and the second electrode, and the first electrode and the charge generation layer. A first stack comprising a first light emitting layer for emitting light and a second light emitting layer doped with a phosphorescent dopant (phosphorescent phosphor) that emits light having a longer wavelength than blue to one or more hosts between the charge generating layer and the second electrode. It may be made including a second stack comprising a. The second subpixel may also have the same electrode and organic layer structure as the first subpixel, and according to the structure, the first organic layer and the second organic layer include a light emitting layer including a phosphorescent light emitting material.

In the white organic light emitting diode display, white light is realized by a mixing effect of blue light emitted from the first light emitting layer of the first stack and phosphorescent light emitted from the second stack. The emission color of the second stack is determined by the phosphorescent dopant contained in the second emission layer, for example using a single yellow green phosphorescent dopant, or a yellow phosphorescent dopant and a green phosphorescence A mixture of dopants or a mixture of red phosphorescent dopants and green phosphorescent dopants may be used. In either case, if the white light can be emitted by the mixing effect together with the blue light emission of the first stack, it may be replaced with a phosphorescent dopant of another color.

In general, the white light generated by the light emission of the white pixel W must be treated with a color filter or a color conversion material (for example, red, green, and blue filters). Can be low. In this case, the power consumption of the display device as a whole may increase.

In this case, when the organic light emitting display device according to the embodiments is applied to all the pixels, power consumption of all the pixels is reduced.

In the above-described embodiment, the case in which the pixels corresponding to P1 2310, P2 2320, and P3 2330 is the white pixel W has been described. However, the present invention is not limited thereto and P1 2310 and P2. In operation 2320 and P3 2330, when each pixel is divided into two or more sub-pixels, the power consumption may be reduced.

In the above-described embodiments of the present invention, the first sub-pixel 2440b and the second sub-pixel included in the organic light emitting diode are described as being made of the same light emitting layer, but the present invention is not limited thereto.

<10th Example >

24 and 25 illustrate embodiments in which different light emitting layers are formed on sub-pixels of an organic light emitting display device.

FIG. 24 is a partially enlarged plan view of an organic light emitting display device according to a tenth exemplary embodiment of the pixels P1, P2, P3, and P4 of FIG. 21.

Referring to FIG. 24, as in FIG. 22, a gate line GLy, a data line DLx to DLx + 3, a high potential voltage line VDDx to VDDx + 3, a switching transistor, and a driving transistor are formed in each pixel. .

At least one of the pixels P1 2410, P2 2420, P3 2430, and P4 2440 may be applied to the organic light emitting diode according to the exemplary embodiment of the present invention described with reference to FIGS. 2 to 20. . For convenience of description, in FIG. 24, only the P4 2440 pixel is divided into two sub-pixels 2440a and 2440b, but the P1 2410, P2 2420, or P3 2430 pixels also have two or more sub-pixels. It can be divided into pixels.

24, the pixels P1 2410 to P3 2430 have a single pixel structure in which an organic light emitting diode is composed of one. Specifically, the P1 2410 pixel is a red pixel R including a red light emitting layer, the P2 2420 pixel is a green pixel G including a green light emitting layer, and the P3 2430 is a blue pixel including a blue light emitting layer. (B). The P1 2410 to P3 2430 pixels may have different thicknesses according to red, green, and blue light emitting layers, thereby improving luminance characteristics by optimizing an optical path according to a micro cavity effect.

The P4 2440 pixel includes an organic light emitting display device according to an exemplary embodiment of the present invention, and includes two sub pixels, and each sub pixel is connected in series. In addition, the P4 2440 pixel emits a light emitting layer differently from the first sub pixel 2440a and the second sub pixel 2440b, and emits white light (W) in the first sub pixel 2440a. 2440b) emits light in blue (B ').

When forming the red pixel (R), the green pixel (G), the blue pixel (B), and the white / blue pixel (W / B '), the red pixel (R) is formed in the red, green, and blue light emitting layers of the organic layer. RGB may be patterned by a deposition process using separate shadow masks or fine metal masks having positions corresponding to the green pixels G and blue pixels B, respectively. In this case, all of the openings are formed at positions corresponding to the white first sub-pixels 2440a (W) in the RGB shadow masks, so that the RGB light-emitting layers are stacked to form the white light-emitting layers, and the blue second sub-pixels 2440b are formed in the B shadow masks. An opening is formed at a position corresponding to (B ') to form the blue second sub-pixel 2440b in the same process as the blue pixel (B).

As described above, a variety of polymer materials are used as well as a deposition process using a shadow mask as an RGB patterning method for red pixels (R), green pixels (G), blue pixels (B), and white / blue pixels (W / B '). It is also possible to use a solvent process (e.g., spin coating, dip coating, doctor blading, screen printing, inkjet printing or thermal transfer) rather than a deposition method.

In this structure, the second sub-pixel 2440b of the P4 2440 pixel may be adjacent to the P3 2430 pixel and emit light of the same color to compensate for the luminance of the P3 2430 pixel. In addition, the first sub-pixel 2440a of the P4 2440 pixel may serve to adjust the white balance in the P1 2410 to P4 2440 pixels.

Meanwhile, the first sub-pixel 2440a of the P4 2440 pixel emitting white light may include all of the red, green, and blue light emitting layers. In this case, the P1 2410 may depend on the microcavity effect. The thicknesses of the red, green, and blue light emitting layers of the first sub-pixel 2440a may be differently formed in the same manner as that of the red, green, and blue light emitting layers of the P3 2430 pixel. In other words, the red light emitting layer may be formed thickest in proportion to the wavelength, the thinnest blue light emitting layer may be formed, and the green light emitting layer may be formed to a medium thickness.

<Eleventh Example >

FIG. 25 is a partially enlarged plan view of an organic light emitting display device according to an eleventh exemplary embodiment of the pixels P1, P2, P3, and P4 of FIG. 21.

Referring to FIG. 25, as in FIG. 22, a gate line GLy, a data line DLx to DLx + 3, a high potential voltage line VDDx to VDDx + 3, a switching transistor, and a driving transistor are formed in each pixel. .

Referring to FIG. 25, as in FIG. 24, the P1 2510 to P3 2530 pixels have a single pixel structure including one organic light emitting diode, and the P1 2510 pixel includes a red pixel R including a red light emitting layer. The P2 2520 pixel is a green pixel G including a green light emitting layer, and the P3 2530 pixel is a blue pixel B including a blue light emitting layer.

In contrast, the P4 2540 pixel includes three sub-pixels, and each sub-pixel has a structure connected in series. In addition, the P4 2540 pixel includes first to third subpixels having different light emitting layers. Specifically, the first subpixel 2540a includes a blue light emitting layer to emit blue light (B), and the second subpixel ( 2540b includes a green light emitting layer and emits light in green (G), and the third sub-pixel 2540c includes a red light emitting layer and emits in red (R).

In the electrical connection relationship, the first electrode of the first sub pixel is electrically connected to the source electrode or the drain electrode of the driving transistor, and the second electrode of the first sub pixel is electrically connected to the third electrode of the second sub pixel. Is connected. The third sub-pixel includes a fifth electrode, a third organic layer on the fifth electrode, and a sixth electrode on the third organic layer. The fifth electrode is electrically connected to the fourth electrode and draws a driving current from the second sub-pixel. I receive it.

In general, white pixels are formed by sequentially stacking red, green, and blue light emitting layers. In this case, the thickness of the pixel may be increased because several light emitting layers must be stacked.

However, when the pixel is formed as in the embodiment of FIG. 25, the red, green, and blue sub-pixels that produce white light are arranged in a plane, thereby reducing the thickness of the pixel. In addition, using the pixel arrangement, the red light emitting layer of the third sub-pixel 2540c is formed when the red light emitting layer of the P1 2510 is formed during the RGB patterning process, and the green light emitting layer of the P2 2520 is formed. The green light emitting layer of the second sub pixel 2540b is formed, and when the blue light emitting layer of the P3 2530 is formed, the blue light emitting layer of the first sub pixel 2540a may be formed, thereby forming a white pixel without additional processing. It becomes possible.

Meanwhile, in the driving of the organic light emitting display device using the organic light emitting display device according to the embodiment, a driving embodiment different from the driving of the organic light emitting display device consisting of a single pixel may be applied.

A driving embodiment of the organic light emitting display device according to the embodiment of the present invention will be described with reference to FIGS. 21 and 26.

FIG. 26 is a circuit diagram modeling the P1 and P2 pixels of FIG. 21.

Referring to FIG. 26, P1 has a single pixel structure in which an organic light emitting diode 2620 is composed of one, and P2 is connected to each other in series with two organic light emitting diodes 2640a and 2640b forming subpixels. It has a structure. For convenience of explanation, the light emitting layers of P1 and P2 are made of the same material.

The organic light emitting diode controls the driving thin film transistor according to the data voltage supplied through the data lines DLx and DLx + 1 to supply a driving current or driving voltage to the organic light emitting diode.

Specifically, the data voltage forms a field in the active layer (semiconductor layer) between the source electrode and the drain electrode by forming electric fields Vgs1 and Vgs2 between the gate electrode and the source electrode of the driving transistors 2610 and 2630. Through these channels, the driving current is transferred to the organic light emitting diode.

In this process, the driving transistor controls the voltage between the gate electrode and the source electrode to determine the amount of current flowing between the drain electrode and the source electrode. As described above, the voltage between the gate electrode and the source electrode is determined according to the data voltage transferred to the data line, so that the driving current or driving voltage supplied to the organic light emitting diode is determined under the control of the data voltage.

The equation regarding the current between the drain electrode and the source electrode according to the voltage of the gate electrode and the source electrode of the driving transistor is as follows.

<Equation 6>

I _DS = K (V _{GSV TH} ) ²

In Equation 6, I _DS is a current between a drain electrode and a source electrode of the driving transistor, K is a current driving capability coefficient, V _GS is a voltage between the gate electrode and the source electrode of the driving transistor, and V _TH is a threshold voltage of the driving transistor. to be.

Referring to Equation 6, it can be seen that the I _DS increases as the V _GS is greater increase in the difference between V _GS and V _TH than V _TH. In the same way, to reduce I _DS , V _GS should be made small.

Referring to FIG. _26A, the driving current of the organic light emitting diode in the single pixel structure P1 is I _OLED . In contrast, referring to FIG. 26B, the driving current of the organic light emitting diode including the two sub-pixels is 1/2 · I _OLED under the same luminance condition. Accordingly, V _GS2 in the two sub pixel structures P2 is controlled lower than V _GS1 in the single pixel structure. As V _GS is determined according to the data voltage, the data voltage of DL _{x +1} is controlled such that V _GS2 is smaller than V _GS1 .

A driving embodiment of the organic light emitting display device is further described in terms of driving voltage.

When the current having the same current density is supplied to two organic light emitting diodes made of the same material, the driving voltages applied to the two organic light emitting diodes are substantially the same.

Since the current densities of the driving currents flowing through the organic light emitting display device shown in FIG. 26 are substantially the same, the driving voltage applied to each organic light emitting diode is substantially the same.

For this reason, in the case of the single pixel structure shown in FIG. _26A, the voltage of V _OLED is formed in the organic light emitting diode during driving, but in the case of the two sub pixel structures shown in FIG. The voltage of 2V _OLED is formed in the whole organic light emitting diode.

The voltages of the power supplies VDD1 and VDD2 for supplying a driving current to the organic light emitting diodes are the voltages V _TFT1 and V _TFT2 between the source and drain electrodes of the driving transistor and the voltages across the organic light emitting diodes (V _OLED ,). 2 · V _OLED ).

<Equation 7>

VDD1 = V _TFT1 + V _OLED , VDD2 = V _TFT2 + 2 V _OLED

Referring to Equation 7, the voltage of the power supply VDD1 supplied to the single pixel structure shown in FIG. 26A and the power supply VDD2 supplied to the two sub pixel structures shown in FIG. 26B. May be controlled to have different values.

Since the voltage between the source electrode and the drain electrode varies depending on the current flowing between the source electrode and the drain electrode, V _TFT1 having a large driving current may have a larger value than V _TFT2 , but when the difference between the two voltages is smaller than the V _OLED value, Overall, the voltage of VDD2 is controlled to be higher than the voltage of VDD1.

An embodiment in which a driving current or a driving voltage of an organic light emitting display device having a single pixel structure and an organic light emitting display device including two or more subpixels is controlled differently through a data voltage supplied to a data line is described with reference to FIG. 26. It was.

21 and 26, an embodiment of converting an image signal RGB transmitted from the host system 2100 into a data voltage supplied to a data line will be described. In FIG. 21, it is assumed that P1 and P2 are organic light emitting diodes each having a single pixel structure and an organic light emitting diode including two sub-pixels as shown in FIG. 26.

The timing controller 2110 receives an image signal RBG from the host system 2100, where the image signal may include control information for emitting the same light through the P1 and P2 pixels.

At this time (when trying to emit the same light through P1 and P2), if P1 and P2 have the same pixel structure, the timing controller 2110 is the same video signal (converted video signal, R'G) with respect to P1 and P2. 'B' and the data driver 2130 outputs the same data voltage (same data voltage level, for example, V _GS is the same) according to the same image signal (converted image signal, R'G'B '). To control the P1 and P2 pixels.

In contrast, when the pixels P1 and P2 are pixels having different structures as shown in FIG. 26, the driving currents of the organic light emitting diodes corresponding to FIG. 26B are smaller under the same luminance condition. Even when the P2 receives an image signal for emitting the same light from the host system 2100, the timing controller 2110 or the data driver 2130 converts the same to generate a data voltage suitable for each pixel structure.

FIG. 27 is a diagram illustrating a process of generating different data voltages for P1 and P2 of FIG. 26.

FIG. 27A illustrates that the timing controller 2110 performs data or signal conversion that matches the pixel structure with respect to the image signal RGB that emits the same light.

Referring to FIG. 27A, the host system 2100 transmits an image signal RGB to be displayed on each pixel of the P1 and P2 to the timing controller 2110. In this case, the images to be displayed on the P1 and P2 pixels may be substantially the same (for example, to emit the same light).

The timing controller 2110 may convert the image signal RGB to match the resolution and pixel structure of the display panel 2140. In this case, since the pixel structures of P1 and P2 are different from each other, the timing signal 2110 may match the image signal RGB. (RGB) should be converted. For example, the image signal RGB may be converted such that the driving current of the P2 pixel is smaller than the driving current of the P1 pixel. Accordingly, the timing controller 2110 receives the same image signal RGB displaying the same image from the host system 2100, but has different converted image signals R'G 'for each of the pixels P1 and P2. B ', R ”G” B ”) will be sent.

The data driver 2130 which receives the different converted image signals R'G'B 'and R "G" B "generates different data voltages V1 and V2 according to the received image signals. It is supplied to the data line connected to the pixels P1 and P2. At this time, since the image signals R'G'B 'and R "G" B "received from the timing controller 2110 have different values according to the pixel structure, the data driver 2130 separates the pixel structure. Does not perform the conversion operation.

FIG. 27B is a diagram illustrating the data driver 2130 performing data or signal conversion suitable for the pixel structure with respect to the image signal RGB that emits the same light.

Referring to FIG. 27B, the host system 2100 transmits an image signal RGB to be displayed on each pixel of the P1 and P2 to the timing controller 2110. In this case, the images to be displayed on the P1 and P2 pixels may be substantially the same (for example, to emit the same light).

The timing controller 2110 may convert the image signal RGB to match the resolution of the display panel 2140. In this case, unlike the embodiment illustrated in FIG. 27A, the timing controller 2110 takes into account the pixel structures of P1 and P2. Is not done. As a result, the timing controller 2110 may transmit the same converted image signal R′G′B ′ to the data driver 2130.

The data driver 2130 which receives the same converted image signal R'G'B 'from the timing controller 2110 generates a data voltage according to the received image signal, wherein each pixel P1 and P2 As a result, the data driver 2130 generates different data voltages V1 and V2 to match the structures of the pixels P1 and P2, and supplies the data voltages V1 and V2 to the data lines connected to the pixels P1 and P2.

In the above, the organic light emitting display device and the display device according to the embodiment of the present invention, and the manufacturing method of the organic light emitting display device have been described.

The organic light emitting diode according to the embodiment of the present invention can reduce the driving current of the organic light emitting diode by dividing pixels having the same area into two or more subpixels and connecting the respective subpixels in series.

When the driving current of the organic light emitting diode of the pixel is reduced in this way, the following effects may occur.

First, power consumption of a driving transistor supplying a driving current to the organic light emitting diode is reduced. Referring to FIG. 4, when compared with a single pixel structure as described above, the driving transistor may have a power consumption reduction effect of up to 50% in a structure including two sub pixels.

Next, when the amount of current transferred through the channel of the driving transistor is reduced, the size of the driving transistor may be reduced. The area or thickness of the source electrode, the drain electrode, and the active layer (semiconductor layer) of the driving transistor is proportional to the amount of current transmitted through the channel. If the amount of the current is reduced, the area or thickness can be reduced. The region in which the driving transistor is positioned in the organic light emitting diode is set as a non-emission region, and when the size of the driving transistor is reduced, an effect of widening the emitting region is generated (see description of FIG. 20).

Next, the organic light emitting device according to the embodiment of the present invention has the effect of reducing the heat consumption of the device by reducing the power consumption to improve the life.

28 is a graph showing a decrease in life as the internal device temperature increases (FIG. 28A) and a graph of decrease in life as the current density increases (FIG. 28B).

The organic light emitting display device according to the embodiment of the present invention has substantially the same current density as the organic light emitting display device having a single pixel structure for the same brightness, and thus the lifespan decrease due to the increase in current density shown in FIG. The problem does not occur. Instead, as can be inferred from the graph of FIG. 28 (a), the organic light emitting diode according to the embodiment of the present invention has a longer life than the organic light emitting diode having a single pixel structure due to the reduced heat generation due to the reduced power consumption. There is an improvement effect.

In particular, it is difficult to achieve international power consumption standards by tightening TV power consumption regulations. However, the organic light emitting display device according to the embodiments lowers power consumption, thereby satisfying international power consumption standards.

Embodiments have been described above with reference to the drawings, but the present invention is not limited thereto.

In the above embodiment, the light emitting material of the light emitting layer included in the organic layer is described as being an organic material, but may include a quantum dot such as graphene quantum dots as the light emitting material of the light emitting layer. In a broad sense, a display device / display device including a quantum dot as a light emitting layer may also be included in an organic light emitting display device / display device.

The terms "comprise", "comprise" or "having" described above mean that a corresponding component may be included unless specifically stated otherwise, and thus, other components are not excluded. It should be construed that it may further include other components. All terms, including technical and scientific terms, have the same meanings as commonly understood by one of ordinary skill in the art unless otherwise defined. Terms commonly used, such as terms defined in a dictionary, should be interpreted to coincide with the contextual meaning of the related art, and shall not be interpreted in an ideal or excessively formal sense unless explicitly defined in the present invention.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: substrate 101: gate line
102: data line 104: first power line
106: switching transistor 110: driving transistor
112 semiconductor layer 114 gate insulating film
116 gate electrode 120 interlayer insulating film
122: source electrode 124: drain electrode
130: protective layer 132: first electrode
134: third electrode 140: partition wall
150: bank 160: first organic layer
162: second organic layer 170: second electrode
175: fourth electrode 180: first sub-region
182: second sub-region 189: shaded area

Claims (44)

A transistor formed on the substrate on which the pixel region is defined;
A first electrode positioned in a first sub-region of the pixel region, electrically connected to a source electrode or a drain electrode of the transistor and receiving a driving current from the transistor, and a first organic layer disposed on the first electrode; A first sub pixel including a second electrode on the first organic layer; And
A third electrode positioned in a second sub-region of the pixel region, electrically connected to the second electrode to receive the driving current from the first sub-pixel, and a second organic layer positioned on the third electrode; And a second sub pixel including a fourth electrode positioned on the second organic layer.
An insulation structure disposed on the third electrode and adjacent to a boundary between the first subregion and the second subregion,
And at least a portion of the insulating structure is reverse tapered to form a shadow area under the organic light emitting device. According to claim 1,
The second electrode includes one or more conductive material layers, and one end of at least one conductive material layer of the one or more conductive material layers extends in the direction of the second sub-region more than the first organic layer, An organic light emitting device, characterized in that adjacent or located on the third electrode. The method of claim 2,
And the at least one conductive material layer of the second electrode in contact with the third electrode is made of the same conductive material as the third electrode. delete According to claim 1,
An edge portion of the third electrode positioned at a boundary between the first subregion and the second subregion among the edges of the third electrode is located in a shaded region of the insulating structure,
And one end of the second electrode is adjacent to the edge of the third electrode or on the third electrode in the shaded region of the insulating structure. The method of claim 5,
And one end of the second electrode flowing into the shadowed area has a shape in which the thickness decreases continuously or discontinuously toward the second sub-region. The method of claim 5,
And the first organic layer is spaced apart from the third electrode using the insulating structure as a mask. According to claim 1,
The first organic layer is spaced apart from the third electrode,
An edge portion of the third electrode positioned at a boundary between the first subregion and the second subregion among the edges of the third electrode is located outside the shadow area of the insulating structure,
A portion of the second electrode is positioned on the edge of the third electrode of the organic light emitting device. According to claim 1,
And an insulating structure surrounding the first sub-region on the first electrode and the third electrode.
And the insulating structure is at least partially reverse tapered so that the second electrode is disconnected from the fourth electrode of the second sub pixel and the common electrode of another pixel. According to claim 1,
And a bank and a partition wall positioned on the third electrode.
The side surface of the bank in contact with the second organic layer is tapered forward, the partition wall is at least partially reverse tapered. The method of claim 10,
And the partition wall is positioned on the bank. The method of claim 11, wherein
And a portion of the bank is located on the partition wall. According to claim 1,
Barrier ribs surrounding the first sub-region are positioned on the first electrode and the third electrode,
The bank is positioned on the first electrode in a direction other than the boundary direction between the first sub-region and the second sub-region. Forming a transistor on the substrate on which the pixel region is defined;
The pixel area may be defined as two or more sub-areas, a first electrode electrically connected to a source electrode or a drain electrode of the transistor in the first sub-area and receiving a driving current from the transistor is formed, and the second sub-area Forming a third electrode corresponding to the first electrode;
Forming a first organic layer spaced apart from the third electrode on the first electrode, and forming a second organic layer corresponding to the first organic layer on the third electrode; And
Forming a second electrode electrically connected to the third electrode on the first organic layer, and forming a fourth electrode corresponding to the second electrode on the second organic layer;
Before forming the first organic layer and the second organic layer,
Forming an insulating structure adjacent to a boundary between the first subregion and the second subregion on the third electrode,
And the insulating structure is at least partially reverse tapered to form a shaded area under the organic electroluminescent device. The method of claim 14,
Forming a protective layer having a contact hole formed on the transistor;
After forming the protective layer, to form the first electrode and the third electrode on the protective layer,
The source electrode or the drain electrode of the transistor is electrically connected to the first electrode through the contact hole. The method of claim 14,
The second electrode includes one or more conductive material layers, and at least one conductive material layer of the one or more conductive material layers extends in the direction of the second sub-region more adjacent to the third electrode than the first organic layer, or It is formed so as to be located on the third electrode. The method of claim 16,
The second electrode is formed by sequentially depositing two different conductive material layers,
The at least one conductive material layer of the second electrode in contact with the third electrode is formed of the same conductive material as the third electrode. delete The method of claim 14,
In the step of forming the insulating structure,
The edge of the third electrode of the edge of the third electrode located in the boundary direction between the first sub-region and the second sub-region is formed in the insulating structure so as to be located in the shaded area of the insulating structure. The manufacturing method of the organic electroluminescent element made into. The method of claim 14,
And forming the first organic layer and the second organic layer by performing vertical thermal deposition on the first electrode, the third electrode, and the insulating structure. The method of claim 20,
The second electrode and the fourth electrode include one or more conductive material layers, and at least one conductive material layer of the one or more conductive material layers is sputtered or chemical vapor deposition onto the first organic layer and the second organic layer. A method of manufacturing an organic electroluminescent device, characterized in that the formation is carried out. The method of claim 19,
The second electrode includes at least one conductive material layer, wherein at least one conductive material layer of the at least one conductive material layer is incident on the substrate at an angle to partially deposit the deposited particles within the shaded region of the insulating structure. A method of manufacturing an organic electroluminescent device, characterized in that it is formed in contact with three electrodes. The method of claim 14,
The method of manufacturing an organic light emitting display device, characterized in that the first organic layer is formed so as to be spaced apart from the third electrode by thermal deposition using a shadow mask in a region overlapping a part of the edge of the third electrode. The method of claim 14,
Forming an insulating structure having at least a portion of an inverse tapered shape surrounding the first sub-region on the first electrode and the third electrode;
In the forming of the second electrode and the fourth electrode,
The second electrode may be formed by using the insulating structure as a mask so that the second electrode is disconnected from the fourth electrode of the second sub-region and the common electrode of another pixel. Way. The method of claim 14,
Before forming the first organic layer and the second organic layer,
Forming a bank and a partition on the third electrode;
The bank is formed so that the contact surface with the second organic layer is tapered forward, and the partition wall is formed so as to at least partially reverse tapered. The method of claim 25,
The barrier rib is formed on the bank. The method of claim 25,
The barrier rib is formed before the bank, and the bank is formed to occupy a portion of the upper surface of the barrier rib and a space below the inverse tapered shape. The method of claim 25,
The partition wall is formed to surround the first sub-region at edges on the first electrode and the third electrode,
And forming the bank in a direction other than the boundary between the first sub-region and the second sub-region at an edge on the first electrode. A display panel including two or more pixels formed in pixel areas defined by crossing two or more data lines and two or more gate lines;
A data driver transferring a data signal through the data lines;
A gate driver transferring a gate signal through the gate lines; And
A timing controller for controlling the driving timing of the data driver and the gate driver,
A first pixel formed in at least one pixel area of the pixel areas,
A first transistor;
A first electrode positioned in a first sub-region of the pixel region, electrically connected to a source electrode or a drain electrode of the first transistor, and receiving a driving current from the first transistor; A first sub pixel including a first organic layer and a second electrode on the first organic layer; And
A third electrode positioned in a second sub-region of the pixel region, electrically connected to the second electrode to receive the driving current from the first sub-pixel, and a second organic layer positioned on the third electrode; And a second sub pixel including a fourth electrode positioned on the second organic layer.
An insulating structure disposed on the third electrode and adjacent to a boundary between the first subregion and the second subregion,
And at least a portion of the insulating structure is reverse tapered to form a shadow area under the insulating structure. The method of claim 29,
A second pixel formed in at least one other pixel area of the pixel areas may be
A second transistor;
And two electrodes on the second transistor and an organic layer formed between the two electrodes. The method of claim 30,
A second electrode of the first sub-pixel of the first pixel and a fourth electrode of the second sub-pixel are electrically separated from each other,
And one of the two electrodes of the second pixel is electrically connected to the fourth electrode. The method of claim 30,
And the driving current of the first transistor of the first pixel is smaller than the driving current of the second transistor of the second pixel. 33. The method of claim 32,
And the timing controller transmits different data control signals to the data driver for the first pixel and the second pixel. 33. The method of claim 32,
And the data driver supplies different data voltages with respect to the first pixel and the second pixel to data lines connected to the respective pixels. The method of claim 30,
And at least one first pixel and at least two second pixels constitute one unit pixel. 36. The method of claim 35 wherein
The second pixel is two, and the two second pixels each include a red and green light emitting layer, and the first sub pixel and the second sub pixel of the first pixel include a blue light emitting layer. Display. 36. The method of claim 35 wherein
The second pixel is three, and the three second pixels each include a red, green, and blue light emitting layer, and one of the first subpixel and the second subpixel of the first pixel is red, green, and blue. A display device comprising one of the light emitting layers and the other comprising a white light emitting layer. 36. The method of claim 35 wherein
The second pixel is three, and the three second pixels each include a red, green, and blue light emitting layer,
The first pixel is electrically connected to the fourth electrode to receive the driving current from the second sub pixel, a third organic layer on the fifth electrode, and a third organic layer on the third electrode. And a third subpixel including a sixth electrode positioned, wherein the first subpixel, the second subpixel, and the third subpixel of the first pixel each include a red, green, and blue light emitting layer. Display device characterized in that. The method of claim 30,
And a width (W) of a channel region of the first transistor of the first pixel is smaller than a width (W) of a channel region of the second transistor of the second pixel. The method of claim 29,
And the first organic layer of the first sub-pixel and the second organic layer of the second sub-pixel include different light emitting layers. The method of claim 29,
The light emitting layer of the first organic layer and the second organic layer comprises a phosphorescent light emitting material. The method of claim 29,
And the first organic layer and the second organic layer include a light emitting layer including red, green, and blue light emitting materials. The method of claim 29,
And the first organic layer and the second organic layer include a light emitting layer including blue and green yellow light emitting materials. 44. The method of claim 42 or 43,
And a color filter disposed between the first pixel and the substrate or on the first pixel.

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