KR102068853B1 - Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드 - Google Patents

Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드 Download PDF

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Publication number
KR102068853B1
KR102068853B1 KR1020147013916A KR20147013916A KR102068853B1 KR 102068853 B1 KR102068853 B1 KR 102068853B1 KR 1020147013916 A KR1020147013916 A KR 1020147013916A KR 20147013916 A KR20147013916 A KR 20147013916A KR 102068853 B1 KR102068853 B1 KR 102068853B1
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KR
South Korea
Prior art keywords
feed
hollow
component
fixture plate
plate
Prior art date
Application number
KR1020147013916A
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English (en)
Korean (ko)
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KR20140098092A (ko
Inventor
남상기
라진더 딘드사
알렉세이 마라크타노브
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from US13/419,369 external-priority patent/US8898889B2/en
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20140098092A publication Critical patent/KR20140098092A/ko
Application granted granted Critical
Publication of KR102068853B1 publication Critical patent/KR102068853B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020147013916A 2011-11-23 2012-11-19 Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드 KR102068853B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161563514P 2011-11-23 2011-11-23
US61/563,514 2011-11-23
US13/419,369 US8898889B2 (en) 2011-11-22 2012-03-13 Chuck assembly for plasma processing
US13/419,369 2012-03-13
PCT/US2012/065949 WO2013078152A1 (fr) 2011-11-23 2012-11-19 Alimentation rf périphérique et retour rf symétrique avec entrée par courroie rf

Publications (2)

Publication Number Publication Date
KR20140098092A KR20140098092A (ko) 2014-08-07
KR102068853B1 true KR102068853B1 (ko) 2020-01-22

Family

ID=48470236

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147013916A KR102068853B1 (ko) 2011-11-23 2012-11-19 Rf 스트랩 입력을 갖는 대칭적 rf 리턴 및 주변 rf 피드

Country Status (4)

Country Link
KR (1) KR102068853B1 (fr)
CN (1) CN104025279B (fr)
TW (1) TWI519216B (fr)
WO (1) WO2013078152A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9805963B2 (en) * 2015-10-05 2017-10-31 Lam Research Corporation Electrostatic chuck with thermal choke
US11469084B2 (en) * 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US10342114B2 (en) * 2017-09-15 2019-07-02 Axcelis Technologies, Inc. RF resonator for ion beam acceleration

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US20090200268A1 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
JP2009231692A (ja) * 2008-03-25 2009-10-08 Tokyo Electron Ltd プラズマ処理装置
US20110056514A1 (en) * 2009-09-04 2011-03-10 Lee Byoungil Workpiece de-chucking device of plasma reactor for dry-cleaning inside of reaction chamber and electrostatic chuck during workpiece de-chucking, and workpiece de-chucking method using the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US7552736B2 (en) * 2007-01-30 2009-06-30 Applied Materials, Inc. Process for wafer backside polymer removal with a ring of plasma under the wafer
US20090025879A1 (en) * 2007-07-26 2009-01-29 Shahid Rauf Plasma reactor with reduced electrical skew using a conductive baffle
KR101577474B1 (ko) * 2008-02-08 2015-12-14 램 리써치 코포레이션 플라즈마 프로세싱 장치용 rf 리턴 스트랩
US8206552B2 (en) * 2008-06-25 2012-06-26 Applied Materials, Inc. RF power delivery system in a semiconductor apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US20090200268A1 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
JP2009231692A (ja) * 2008-03-25 2009-10-08 Tokyo Electron Ltd プラズマ処理装置
US20110056514A1 (en) * 2009-09-04 2011-03-10 Lee Byoungil Workpiece de-chucking device of plasma reactor for dry-cleaning inside of reaction chamber and electrostatic chuck during workpiece de-chucking, and workpiece de-chucking method using the same

Also Published As

Publication number Publication date
TW201338637A (zh) 2013-09-16
TWI519216B (zh) 2016-01-21
CN104025279A (zh) 2014-09-03
KR20140098092A (ko) 2014-08-07
WO2013078152A1 (fr) 2013-05-30
CN104025279B (zh) 2017-03-08

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