KR102055929B1 - Resin composition for semiconductor package, prepreg and metal clad laminate using the same - Google Patents

Abstract

The present invention relates to a resin composition for a semiconductor package and a prepreg and a metal foil laminate using the same. More specifically, the resin composition for a semiconductor package includes a cyclic olefin-based copolymer including two repeating units having a specific functional group in a predetermined ratio, and the prepreg and metal foil laminate prepared using the same have excellent heat resistance, It exhibits low dielectric properties.

Description

RESIN COMPOSITION FOR SEMICONDUCTOR PACKAGE, PREPREG AND METAL CLAD LAMINATE USING THE SAME

The present invention relates to a resin composition for a semiconductor package having high heat resistance and low dielectric properties, and a prepreg and a metal foil laminate using the same.

Higher frequency is required as the high performance of electronic devices. Transmission loss in the high frequency region adversely affects the performance, durability, and production yield of the electronic device. Therefore, development of a material having low dielectric constant and low dielectric loss tangent characteristics is required to reduce the transmission loss.

Polyphenylene ether is a typical low dielectric material used in the fields of telecommunications and networks. Polyphenylene ether has advantages of high mechanical strength, low hygroscopicity and low dielectric properties, but due to lack of heat resistance, When used in combination, there was a limit to decrease the dielectric properties.

More specifically, the semiconductor package process includes a wiring, EMC molding, die attaching, reflow process, and the like, unlike general network applications, and a high temperature environment around 200 ° C is required. However, since the polyphenylene ether has a glass transition temperature of approximately 200 ° C., it exhibits a sharp decrease in modulus and an increase in coefficient of thermal expansion (CTE) around 200 ° C.

Therefore, when the polyphenylene ether is applied as a substrate material of the semiconductor package process, the thickness of the substrate is thin, so that the package may be bent during the process or may be disadvantageous in terms of strength.

Accordingly, there is still a need for development of a material having a low dielectric constant and dielectric loss factor while having a glass transition temperature of 250 ° C. or higher for application to a semiconductor substrate.

The present invention is to provide a resin composition for a semiconductor package having a high heat resistance, low dielectric properties and a prepreg and a metal foil laminate using the same.

The present invention provides a resin composition for a semiconductor package comprising a cyclic olefin copolymer comprising a repeating unit represented by Formula 1 below and a repeating unit represented by Formula 2 below at a molar ratio of 8: 2 to 2: 8. do.

Moreover, this invention provides the prepreg obtained by impregnating the said resin composition for semiconductor packages in a fiber base material.

In addition, the present invention is the prepreg; And a metal foil comprising a metal foil integrated with the prepreg by heating and pressurization.

Hereinafter, a resin composition for a semiconductor package according to a specific embodiment of the present invention will be described in more detail.

According to one embodiment of the invention, a semiconductor comprising a cyclic olefin copolymer comprising a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2) in a molar ratio of 8: 2 to 2: 8 Resin compositions for packages may be provided:

[Formula 1]

[Formula 2]

In Chemical Formulas 1 and 2,

p and q are each independently integers of 0 to 4,

n and m are each independently an integer of 0-3.

The inventors of the present invention show that polyphenylene ether, which has been used as a material for a semiconductor package process, has a low glass transition temperature, and thus has a limitation such as a warpage phenomenon or a decrease in strength during a high temperature package process. A study on the material was conducted.

As a result, the resin composition for semiconductor packages containing the copolymer containing the cyclic olefin type repeating unit which has a vinyl group, and the cyclic olefin type repeating unit which has an epoxy group in a predetermined ratio, has a high glass transition temperature of 250 degreeC or more, Experiments confirmed that it exhibits low dielectric properties and completed the invention.

More specifically, the resin composition for a semiconductor package according to the embodiment includes a repeating unit represented by Chemical Formula 1, but when the ratio of the repeating unit represented by Chemical Formula 1 increases, the dielectric properties may be improved, but the adhesive force or solvent solubility is increased. Can be lowered. In addition, when the ratio of the repeating unit represented by Formula 2 including the epoxy group is increased, the adhesion may be enhanced, but the dielectric properties may be reduced.

Accordingly, in order to be used as a material for a semiconductor package, it is necessary to adjust the repeating unit represented by Chemical Formula 1 and the repeating unit represented by Chemical Formula 2 at an appropriate ratio, and the resin composition for a semiconductor package according to the embodiment is represented by Chemical Formula 1. Including a repeating unit and a repeating unit represented by the following formula (2) in a molar ratio of 8: 2 to 2: 8, preferably 8: 2 to 5: 5, more preferably 8: 2 to 6: 4, When made of a prepreg or a metal foil laminate, it can exhibit excellent dielectric properties, adhesion, and the like while having a high glass transition temperature.

If the ratio of the repeating unit represented by the formula (1) to the repeating unit represented by the formula (2) is out of the above range, the heat resistance may not be good, or the adhesive force, dielectric properties, etc. may be insufficient to apply to the material for the semiconductor package.

In the repeating units represented by Formulas 1 and 2, n and m are integers of 0 to 3, preferably 0 or 1, and more preferably 0. In the case where n and m are 0, a vinyl group or an epoxy group is directly connected to a norbornene repeating unit without an alkylene linker, and thus has excellent heat resistance as compared with an alkylene linker. It is preferred to include a copolymer comprising repeat units in which n and m are zero in the composition.

In addition, the cyclic olefin copolymer may have a weight average molecular weight of about 10,000 g / mol or less, preferably about 1,000 to 10,000 g / mol, more preferably about 3,000 to 8,000 g / mol. have. Thus, since the cyclic olefin polymer has a low weight average molecular weight, the resin composition for a semiconductor package of the embodiment can ensure sufficient flowability.

Meanwhile, the resin composition for a semiconductor package according to an embodiment of the present invention is one selected from the group consisting of a binder, a filler, a solvent, a radical initiator, a flame retardant, a lubricant, a dispersant, a plasticizer, a rubber, an elastomer, and a silane coupling agent. It may further include the above additives.

More specifically, the binder may include at least one resin selected from the group consisting of an epoxy resin, a bismaleimide resin, a cyanate ester resin, and a bismaleimide-triazine resin.

At this time, as the epoxy resin can be used without limitation usually used in the resin composition for semiconductor packages, the kind is not limited.

For example, the epoxy resin is a bisphenol-type epoxy resin represented by the following formula (3), a novolak-type epoxy resin represented by the following formula (4), a tetraphenylethane type epoxy resin represented by the following formula (5), to the formulas 6 and At least one selected from the group consisting of a naphthalene type epoxy resin, a biphenyl type epoxy resin represented by the following formula (8), and a dicyclopentadiene type epoxy resin represented by the following formula (9) can be used.

[Formula 3]

In Chemical Formula 3,

또는

이고, R is

or

ego,

n is 0 or an integer from 1 to 50.

More specifically, the epoxy resin of Formula 3 may be a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, a bisphenol M type epoxy resin, or a bisphenol S type epoxy resin, respectively, according to the type of R.

[Formula 4]

In Chemical Formula 4,

R is H or CH ₃ ,

n is 0 or an integer from 1 to 50.

More specifically, the novolak-type epoxy resin of Formula 4 may be a phenol novolak-type epoxy resin or cresol novolak-type epoxy resin, respectively, depending on the type of R.

[Formula 5]

[Formula 6]

[Formula 7]

[Formula 8]

In Chemical Formula 8,

n is 0 or an integer from 1 to 50.

[Formula 9]

In Formula 9, n is 0 or an integer of 1 to 50.

In addition, when the resin composition for a semiconductor package includes an epoxy resin, a curing agent of an epoxy resin may be used together for curing.

As a hardening | curing agent of the said epoxy resin, what is normally used for the resin composition for semiconductor packages can be used without a restriction | limiting, The kind is not limited. For example, a phenol novolak type, an amine type, a thiol type, an acid anhydride type | mold substance, etc. are mentioned, These can be used individually or in mixture of 2 or more types.

In addition, the bismaleimide resin can be used without limitation, which is usually used in the resin composition for semiconductor packages, the kind is not limited.

As a preferable example, the bismaleimide resin is a diphenylmethane bismaleimide resin represented by the following formula (10), a phenylene type bismaleimide resin represented by the following formula (11), and a bisphenol A diphenyl represented by the following formula (12). It may be at least one selected from the group consisting of an ether bismaleimide resin, and a bismaleimide resin composed of an oligomer of a diphenylmethane bismaleimide represented by the following formula (13) and a phenylmethane type maleimide resin.

[Formula 10]

In Chemical Formula 10,

R ₁ and R ₂ are each independently H, CH ₃ or C ₂ H ₅ .

[Formula 11]

[Formula 12]

[Formula 13]

In Chemical Formula 13,

n is 0 or an integer from 1 to 50.

In addition, the cyanate ester resin can be used without limitation, which is usually used in the resin composition for semiconductor packages, the type is not limited.

As a preferable example, the cyanate ester resin is a novolak-type cyanate resin represented by the following formula (14), a dicyclopentadiene type cyanate resin represented by the following formula (15), and a bisphenol type cyanate resin represented by the following formula (16). And some triazineized prepolymers thereof, and these may be used alone or in combination of two or more thereof.

[Formula 14]

In Chemical Formula 14,

n is 0 or an integer from 1 to 50.

[Formula 15]

In Chemical Formula 15,

n is 0 or an integer from 1 to 50.

[Formula 16]

In Chemical Formula 16,

또는

이다.R is

or

to be.

More specifically, the cyanate resin of Formula 16 may be bisphenol A type cyanate resin, bisphenol E type cyanate resin, bisphenol F type cyanate resin, or bisphenol M type cyanate resin, respectively, according to the kind of R. .

In addition, the bismaleimide-triazine resin can be used without limitation, which is usually used in the resin composition for semiconductor packages, the type is not limited.

In addition, the filler may be used in the resin composition for semiconductor packages without limitation, but may be used an inorganic filler having a silane compound such as epoxy silane, phenyl silane, (meth) acrylate silane compound bonded to the surface It is preferable.

In addition, the inorganic filler is silica aluminum trihydroxide, magnesium hydroxide, molybdenum oxide, zinc molybdate, zinc borate, zinc stannate, alumina, clay, kaolin, talc, calcined kaolin, calcined talc, mica It may be at least one selected from the group consisting of short glass fibers, fine glass powder and hollow glass.

In addition, when the surface-treated filler is used, a packing density may be increased by using a small size of the nano particle size and a large size of the micro particle size to increase the filling rate.

The filler may be a mixture including an inorganic filler having an average particle diameter of 20 nm to 50 nm and an inorganic filler having an average particle diameter of 0.2 μm to 10 μm.

When the filler having different average particle sizes is used, the mixing ratio is not limited, but the filler having an average particle diameter of 20 nm to 50 nm and the filler having an average particle diameter of 0.2 μm to 10 μm are based on the total weight of the entire surface-treated filler. It can be mixed and used in the weight ratio of: 90-90: 10 or 20: 80-80: 20.

According to a preferred embodiment of the present invention, the filler may be a silica in which the silane compound is bonded to the surface.

As the method for surface treatment of the filler, a method of dry or wet treatment of silica particles using a silane compound as a surface treatment agent may be used. For example, the silica may be surface-treated by a wet method using 0.01 to 1 part by weight of the silane compound based on 100 parts by weight of the silica particles.

The filler is 5 to 300 parts by weight, preferably 30 to 200 parts by weight, more preferably based on 100 parts by weight of the cyclic olefin copolymer including the repeating unit represented by Formula 1 and the repeating unit represented by Formula 2. Preferably 30 to 150 parts by weight. When the content of the filler is less than about 5 parts by weight, effects such as a decrease in thermal expansion coefficient and an increase in rigidity are insignificant, and when the content of the filler exceeds 300 parts by weight, the dielectric constant of the prepreg is increased.

And, the resin composition for a semiconductor package of the embodiment can be used as a solution by adding a solvent as needed. The solvent is not particularly limited as long as it shows good solubility in the resin component, and alcohol, ether, ketone, amide, aromatic hydrocarbon, ester, nitrile, and the like can be used. Or you may use the mixed solvent which used 2 or more types together. In addition, the content of the solvent is not particularly limited as long as the resin composition may be impregnated into the glass fiber during prepreg manufacture.

In addition, the radical initiator may be used for the purpose of improving the workability, economic efficiency, etc. by increasing the curing rate of the cyclic olefin copolymer. The kind and compounding quantity of a radical initiator are not specifically limited, For example, Organic peroxides, such as dicumyl peroxide; Quinone compounds such as 3,3 ', 5,5'-tetramethyl-1,4-diphenoquinone and the like; Complexes containing a transition metal and an amine can be used, and two or more thereof can be used in combination. Preferably, the present invention can use peroxides as radical initiators. When the radical initiator is used, the content of the radical initiator is about 0.1 to 10 parts by weight based on 100 parts by weight of the cyclic olefin copolymer including the repeating unit represented by Formula 1 and the repeating unit represented by Formula 2, Preferably it may be 1 to 5 parts by weight.

In addition, the resin composition for a semiconductor package according to the embodiment may further include at least one additive selected from the group consisting of a flame retardant, a lubricant, a dispersant, a plasticizer, and a silane coupling agent, which are typically added as needed. In addition, the resin composition of the present invention may further include various high polymer compounds, other flame resistant compounds or additives such as other thermosetting resins, thermoplastic resins, and oligomers and elastomers thereof, so long as the properties inherent in the resin composition are not impaired. These are not particularly limited as long as they are selected from those commonly used.

Meanwhile, according to another embodiment of the present invention, a prepreg prepared by impregnating the resin composition for a semiconductor package into a fiber substrate may be provided.

The prepreg means that the resin composition for semiconductor package is impregnated into the fiber base material in a semi-cured state.

Although the kind of the fiber base material is not particularly limited, polyamide-based resin fibers, such as glass fiber base material, polyamide resin fiber, aromatic polyamide resin fiber, polyester resin fiber, aromatic polyester resin fiber, all aromatic polyester Synthetic fiber base, kraft paper, cotton linter paper, linter and kraft pulp composed of woven or non-woven fabric mainly composed of polyester resin fibers such as resin fibers, polyimide resin fibers, polybenzoxazole fibers, and fluororesin fibers Paper substrates based on honcho paper and the like may be used, and glass fiber substrates are preferably used. The glass fiber substrate can improve the strength of the prepreg, lower the absorption rate, and reduce the coefficient of thermal expansion.

The glass substrate used in the present invention may be selected from glass substrates used for various printed circuit board materials. Examples thereof include, but are not limited to, glass fibers such as E glass, D glass, S glass, T glass, NE glass and L glass. If necessary, the glass-based material may be selected according to the intended use or performance. Glass-based forms are typically woven, nonwoven, roving, chopped strand mats or surfacing mats. Although the thickness of the glass substrate is not particularly limited, about 0.01 to 0.3 mm or the like can be used. Of these materials, glass fiber materials are more preferred in terms of strength and water absorption properties.

In addition, the method for preparing the prepreg in the present invention is not particularly limited, and may be prepared by methods well known in the art. For example, the method of manufacturing the prepreg may be used by an impregnation method, a coating method using various coaters, a spray injection method, or the like.

In the case of the impregnation method, after preparing the varnish, the prepreg may be prepared by impregnating the fiber substrate with the varnish.

That is, although the manufacturing conditions, etc. of the said prepreg are not specifically limited, It is preferable to use in the varnish state which added the solvent to the said resin composition for semiconductor packages. The solvent for the resin varnish is not particularly limited as long as it can be mixed with the resin component and has good solubility. Specific examples thereof include ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone and cyclohexanone, aromatic hydrocarbons such as benzene, toluene and xylene, and amides such as dimethylformamide and dimethylacetamide, methylcello Aliphatic alcohols such as solve and butyl cellosolve.

In the preparation of the prepreg, the solvent used is preferably volatilized by 80% by weight or more. For this reason, there is no restriction | limiting also in a manufacturing method, drying conditions, etc., The temperature at the time of drying is about 80 degreeC-180 degreeC, and time does not have a restriction | limiting in particular in balance with the gelation time of a varnish. The varnish impregnation amount is preferably such that the resin solid content of the varnish is about 30 to 80% by weight relative to the total amount of the resin solid content of the varnish and the base material.

Further, according to another embodiment of the invention, the prepreg; And a metal foil comprising a metal foil integrated with the prepreg by heating and pressurization.

The metal foil is copper foil; Aluminum foil; A composite foil having a three-layer structure including nickel, nickel-phosphorus, nickel-tin alloy, nickel-iron alloy, lead, or lead-tin alloy as an intermediate layer, and including copper layers having different thicknesses on both surfaces thereof; Or the composite foil of the two-layered structure which combined aluminum and copper foil.

According to a preferred embodiment, the metal foil used in the present invention may be copper foil or aluminum foil, and may be used having a thickness of about 2 to 200 μm, but the thickness is preferably about 2 to 35 μm. Preferably, copper foil is used as said metal foil. In addition, according to the present invention, as the metal foil, nickel, nickel-phosphorus, nickel-tin alloys, nickel-iron alloys, lead, or lead-tin alloys are used as intermediate layers, and on both sides thereof, 0.5 to 15 μm copper layers and 10 to 10 The composite foil of the 3-layer structure which provided the 300-micrometer copper layer, or the 2-layered composite foil which combined aluminum and copper foil can also be used.

The metal laminate including the prepreg thus prepared can be used for the manufacture of double-sided or multilayer printed circuit boards after laminating in one or more sheets. The present invention can manufacture a double-sided or multilayer printed circuit board by circuit-processing the metal foil laminate, the circuit processing can be applied to a method performed in a general double-sided or multilayer printed circuit board manufacturing process.

According to the present invention, a resin composition for a semiconductor package having high heat resistance and low dielectric properties, and a prepreg and a metal foil laminate using the same can be provided.

The invention is explained in more detail in the following examples. However, the following examples are merely to illustrate the invention, but the content of the present invention is not limited by the following examples.

<Production Example and Comparative Production Example>

Comparative Preparation Example 1 Preparation of VNB

Into the Schlenk flask, 30.0 g of 5-Vinyl-2-norbornene and 60.0 g of toluene were added. The temperature was raised to 105 ° C. while stirring, and 1.57 g of Palladium dichloride, 2.96 g of Tricyclohexylphosphine, and 4.26 g of Silver tetrafluoroborate dissolved in 1 ml of dichloromethane were added thereto, and reacted with stirring at 110 ° C. for 16 hours. After the reaction, the reactant was added to excess methanol to obtain a white polymer precipitate. The precipitate was filtered through a glass funnel and the collected solid was dried in a vacuum oven at 30 ° C. for 24 hours to obtain a polymer (Mw = 7400 g / mol, PDI = 2.01, yield 48%).

Preparation Example 1 Preparation of VNB / ENB (8: 2) Copolymer

15 g of the polymer obtained in Comparative Preparation Example 1 was dissolved in 45 g of Dichloromethane. The temperature was lowered to 0 ° C. with stirring, and 4.3 g of mCPBA was slowly added dropwise. After stirring for 1 hour, the temperature was raised to room temperature and reacted for 5 hours. After the reaction, the reaction solution was poured into excess methanol to obtain a white solid precipitate. The precipitate was filtered through a glass funnel and the collected solid was dried in a vacuum oven at 30 ° C. for 24 hours to obtain a copolymer having VNB: ENB = 8: 2. Conversion was measured by ¹ H NMR (Mw = 7800 g / mol, PDI = 1.95, yield 80%).

Preparation Example 2 Preparation of VNB / ENB (5: 5) Copolymer

15 g of the polymer obtained in Comparative Preparation Example 1 was dissolved in 45 g of Dichloromethane. The temperature was lowered to 0 ° C. with stirring, and 10.8 g of mCPBA was slowly added dropwise. After stirring for 1 hour, the temperature was raised to room temperature and reacted for 5 hours. After the reaction, the reaction solution was poured into excess methanol to obtain a white solid precipitate. The precipitate was filtered through a glass funnel and the collected solid was dried in a vacuum oven at 30 ° C. for 24 hours to obtain a copolymer having VNB: ENB = 5: 5. Conversion was measured by ¹ H NMR (Mw = 7800 g / mol, PDI = 1.96, yield 81%).

Preparation Example 3 Preparation of VNB / ENB (2: 8) Copolymer

15 g of the polymer obtained in Comparative Preparation Example 1 was dissolved in 45 g of Dichloromethane. The temperature was lowered to 0 ° C. with stirring and 17.2 g of mCPBA was slowly added dropwise. After stirring for 1 hour, the temperature was raised to room temperature and reacted for 5 hours. After the reaction, the reaction solution was poured into excess methanol to obtain a white solid precipitate. The precipitate was filtered through a glass funnel and the collected solid was dried in a vacuum oven at 30 ° C. for 24 hours to obtain a copolymer having VNB: ENB = 2: 8. Conversion was measured by ¹ H NMR (Mw = 7900 g / mol, PDI = 1.96, yield 80%).

Comparative Preparation Example 2 Preparation of ENB

15 g of the VNB obtained in Comparative Preparation Example 1 was dissolved in 45 g of dichloromethane. The temperature was lowered to 0 ° C. with stirring, and 21.6 g of mCPBA was slowly added dropwise. After stirring for 1 hour, the temperature was raised to room temperature and reacted for 5 hours. After the reaction, the reaction solution was poured into excess methanol to obtain a white solid precipitate. The precipitate was filtered through a glass funnel and the collected solid was dried in a vacuum oven at 30 ° C. for 24 hours to obtain ENB having an epoxy conversion of 100%. Conversion was measured by ¹ H NMR (Mw = 7900 g / mol, PDI = 1.98, yield 80%).

Comparative Preparation Example 3 Preparation of VNB / ENB (9: 1) Copolymer

15 g of the VNB obtained in Comparative Preparation Example 1 was dissolved in 45 g of dichloromethane. The temperature was lowered to 0 ° C. with stirring, and 2.2 g of mCPBA was slowly added dropwise. After stirring for 1 hour, the temperature was raised to room temperature and reacted for 5 hours. After the reaction, the reaction solution was poured into excess methanol to obtain a white solid precipitate. The precipitate was filtered through a glass funnel and the collected solid was dried in a vacuum oven at 30 ° C. for 24 hours to obtain a copolymer having VNB: ENB = 9: 1. Conversion was measured by ¹ H NMR (Mw = 7800 g / mol, PDI = 1.95, yield 80%).

<Examples and Comparative Examples>

(1) Preparation of Resin Varnish

According to the composition shown in Table 1, the cyclic olefin copolymer, polyphenylene ether (PPE), radical initiator, and inorganic filler obtained in Preparation Examples 1 to 3 and Comparative Preparation Examples 1 to 3 to cyclohexanone After the mixture was added to 60% of the solid content, the mixture was stirred at room temperature for one day at a speed of 400 rpm to prepare the resin compositions (resin varnishes) of Examples 1 to 3 and Comparative Examples 1 to 4.

(2) Preparation of prepreg and copper foil laminate

The resin composition (resin varnish) prepared above was impregnated into a glass fiber having a thickness of 15 μm (manufactured by Asahi Kasei, L-glass # 1017), followed by hot air drying at a temperature of 140 ° C. for 2 to 5 minutes, and a prepreg of 25 μm. Was prepared.

After laminating the two prepregs prepared above, copper foil (thickness 12 μm, manufactured by Mitsui) was placed on both surfaces thereof, and laminated, and cured for 150 minutes under conditions of 220 ° C. and 30 kg / cm 2 to prepare a copper foil laminate. .

(Parts by weight) Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 VNB: ENB = 8: 2 100 VNB: ENB = 5: 5 100 VNB: ENB = 2: 8 100 VNB 100 ENB 100 VNB: ENB = 9: 1 100 PPE 100 Radical initiator 2 1.25 0.5 2.5 - 2.25 1.5 Inorganic filler 50 50 50 50 50 50 50

In Table 1, Sigma Aldrich's dicumyl peroxide was used as the radical initiator, and Admatech's silica (SC 2050) was used as the inorganic filler. And SAPIC SA-9000 of Comparative Example 4 was used.

Experimental Example

And the physical property was measured with the following method about the copper foil laminated sheets manufactured in Examples 1-3 and Comparative Examples 1-4.

(1) Modulus and glass transition temperature (Tg) measurement method:

After the copper foil layer of the copper clad laminate was etched and removed, the modulus and glass transition temperature were measured using a DMA (Dynamic Mechanical Analysis) Q800 measuring instrument manufactured by TA Instruments.

(2) Dielectric constant (Dk) and dielectric loss (Df) measurement method:

The copper foil layer of the copper clad laminate was etched away, dried at 125 ° C. for 30 minutes, and subjected to Split Post Dielectric Resonance (SPDR) method, using a Agilent E5071B ENA device for dielectric constant (Dk) and dielectric loss (Df) at 1 GHz. Was measured.

(3) Peel strength measurement method: measured according to the test standard of IPC-TM-650.2.4.8.

The measurement results are summarized in Table 2 below.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Tg (℃) 290 295 300 290 305 290 210 Modulus
(GPa @ 30 ℃, @ 260 ℃) 11/7 11/7 11/7 10/6 11/7 10/7 10/6 Dk (@ 1 GHz) 2.9 3.1 3.3 2.7 3.4 2.8 2.9 Df (@ 1 GHz) 0.004 0.0045 0.0051 0.0031 0.0062 0.0034 0.003 Peel strength (kgf / cm) 0.5 0.54 0.6 0.1 0.7 0.2 0.1

As shown in Table 2, the resin composition for semiconductor packages of Examples 1 to 3 comprising a copolymer comprising VNB: ENB in a ratio of 8: 2 to 2: 8, Comparative Example 2 comprising an ENB homopolymer Compared with the low dielectric constant Dk of about 0.1 or more, the dielectric property is excellent, and thus the performance and process yield of the semiconductor package in the high frequency region can be expected to be high.

In addition, the resin compositions of Examples 1 to 3 exhibited an adhesive force of 0.3 to 0.4 kgf / cm or more higher than Comparative Example 1 including the VNB homopolymer and Comparative Example 3 including the copolymer containing the VNB in excess, Increased production process yield and reliability can be expected.

That is, the resin composition for a semiconductor package of the present invention is characterized in that it comprises a cyclic olefin-based copolymer comprising a repeating unit containing a vinyl group and a repeating unit containing an epoxy group in a specific ratio. It can be confirmed in the above experimental example that the properties or adhesive strength is reduced.

In addition, the resin compositions of Examples 1 to 3 have a significantly higher glass transition of 290 ° C or higher than that of the polyphenylene ether of Comparative Example 4, which was previously used as a material for a semiconductor package process, having a glass transition temperature of about 210 ° C. Since it has a temperature, the reliability in a high temperature process can be expected to be high.

Claims (7)

A cyclic olefin copolymer comprising a repeating unit represented by the following Chemical Formula 1 and a repeating unit represented by the following Chemical Formula 2 at a molar ratio of 8: 2 to 2: 8,
The cyclic olefin copolymer has a weight average molecular weight of 1,000 to 10,000 g / mol, a resin composition for a semiconductor package:
[Formula 1]

[Formula 2]

In Chemical Formulas 1 and 2,
p and q are each independently integers of 0 to 4,
n and m are each independently an integer of 0-3.
delete The method of claim 1,
A resin composition for a semiconductor package further comprising at least one additive selected from the group consisting of a binder, a filler, a solvent, a radical initiator, a flame retardant, a lubricant, a dispersant, a plasticizer, a rubber, an elastomer and a silane coupling agent.
The method of claim 3,
The binder comprises at least one resin selected from the group consisting of epoxy resins, bismaleimide resins, cyanate ester resins and bismaleimide-triazine resins.
The method of claim 3,
The filler is a resin composition for a semiconductor package, the silane compound is an inorganic filler bonded to the surface.
The prepreg obtained by impregnating the fiber base material with the resin composition for semiconductor packages of Claim 1.
A prepreg according to claim 6; And a metal foil comprising integrally with the prepreg by heating and pressurizing.