KR102052359B1 - Encapsulation composition for light emitting diode divice - Google Patents
Encapsulation composition for light emitting diode divice Download PDFInfo
- Publication number
- KR102052359B1 KR102052359B1 KR1020140081315A KR20140081315A KR102052359B1 KR 102052359 B1 KR102052359 B1 KR 102052359B1 KR 1020140081315 A KR1020140081315 A KR 1020140081315A KR 20140081315 A KR20140081315 A KR 20140081315A KR 102052359 B1 KR102052359 B1 KR 102052359B1
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- KR
- South Korea
- Prior art keywords
- composition
- light emitting
- encapsulant
- emitting diode
- group
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 238000005538 encapsulation Methods 0.000 title claims abstract description 18
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 16
- 229920002050 silicone resin Polymers 0.000 claims abstract description 13
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 9
- 239000003054 catalyst Substances 0.000 claims description 17
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000007650 screen-printing Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910021332 silicide Inorganic materials 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- -1 silane compound Chemical class 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005728 strengthening Methods 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical group CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 claims description 3
- URDOJQUSEUXVRP-UHFFFAOYSA-N 3-triethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CCO[Si](OCC)(OCC)CCCOC(=O)C(C)=C URDOJQUSEUXVRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 239000003566 sealing material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 claims description 3
- LTQBNYCMVZQRSD-UHFFFAOYSA-N (4-ethenylphenyl)-trimethoxysilane Chemical compound CO[Si](OC)(OC)C1=CC=C(C=C)C=C1 LTQBNYCMVZQRSD-UHFFFAOYSA-N 0.000 claims description 2
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 claims description 2
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 claims description 2
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 claims description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 claims description 2
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 2
- MINPJSICMOINAC-UHFFFAOYSA-N C(#C)C1(CCCCC1)O.C(#C)C1(CCCCC1)O Chemical compound C(#C)C1(CCCCC1)O.C(#C)C1(CCCCC1)O MINPJSICMOINAC-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 claims description 2
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 claims 2
- KRUWQUUDUHZGRG-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound C(C=C)(=O)OCCC[Si](OC)(OC)OC.C(C=C)(=O)OCCC[Si](OC)(OC)OC KRUWQUUDUHZGRG-UHFFFAOYSA-N 0.000 claims 1
- JOIPGYAFSWSMAB-UHFFFAOYSA-N CCO[Si](OCC)(OCC)CCCOCC1CO1.CCO[Si](OCC)(OCC)CCCOCC1CO1 Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1.CCO[Si](OCC)(OCC)CCCOCC1CO1 JOIPGYAFSWSMAB-UHFFFAOYSA-N 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 238000004383 yellowing Methods 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
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- 239000001301 oxygen Substances 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract description 3
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- 230000000052 comparative effect Effects 0.000 description 10
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- 238000005516 engineering process Methods 0.000 description 5
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- 239000004971 Cross linker Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
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- 239000003112 inhibitor Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
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- 238000003756 stirring Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 1
- 125000001731 2-cyanoethyl group Chemical group [H]C([H])(*)C([H])([H])C#N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- OXUPGAYZJXSHBF-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound C(C(=C)C)(=O)OCCC[Si](OCC)(OCC)C.C(C(=C)C)(=O)OCCC[Si](OCC)(OCC)C OXUPGAYZJXSHBF-UHFFFAOYSA-N 0.000 description 1
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000005998 bromoethyl group Chemical group 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
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- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 125000004093 cyano group Chemical group *C#N 0.000 description 1
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- 239000003623 enhancer Substances 0.000 description 1
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
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- 125000006038 hexenyl group Chemical group 0.000 description 1
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- 150000002460 imidazoles Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
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- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
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- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
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- 125000001624 naphthyl group Chemical group 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004365 octenyl group Chemical group C(=CCCCCCC)* 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
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- 238000001878 scanning electron micrograph Methods 0.000 description 1
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
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- CFAVHELRAWFONI-UHFFFAOYSA-N tris(2,4-dibutylphenyl) phosphite Chemical compound CCCCC1=CC(CCCC)=CC=C1OP(OC=1C(=CC(CCCC)=CC=1)CCCC)OC1=CC=C(CCCC)C=C1CCCC CFAVHELRAWFONI-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/10—Block- or graft-copolymers containing polysiloxane sequences
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
Abstract
본 발명은 발광 다이오드 소자용 봉지재 조성물에 관한 것으로서, 더욱 상세하게는 실리콘 수지 및 실록산 가교제를 포함하여 구성되는 봉지재 조성물 및 이를 포함하는 발광 다이오드 소자용 봉지재에 관한 것이다.
본 발명의 액상 봉지재 조성물은 모듈에 직접 도포함으로써 공정시간이 단축될 뿐 아니라, 이물관리도 용이한 장점이 있다. 또 모듈에 밀착력도 높기 때문에 다이오드 소자의 수분, 산소의 차단이 향상된다.
그리고 액상 봉지재 조성물을 사용함으로써 내열성, 내한성, 안정성, 높은 투과율과 가혹화 조건에서의 무황변의 특징이 있다.The present invention relates to an encapsulant composition for a light emitting diode device, and more particularly, to an encapsulant composition comprising a silicone resin and a siloxane crosslinking agent, and an encapsulant for a light emitting diode device including the same.
The liquid encapsulation composition of the present invention has the advantage of not only shortening the process time by directly applying to the module, but also foreign matter management. In addition, since the adhesion to the module is high, the blocking of moisture and oxygen in the diode element is improved.
And by using the liquid encapsulation composition, there is a characteristic of heat resistance, cold resistance, stability, high transmittance and yellowing under harsh conditions.
Description
본 발명은 발광 다이오드 소자용 봉지재 조성물에 관한 것으로서, 더욱 상세하게는 실리콘 수지 및 실록산 가교제를 포함하여 구성되는 봉지재 조성물 및 이를 포함하는 봉지재에 관한 것이다.The present invention relates to an encapsulant composition for a light emitting diode device, and more particularly, to an encapsulant composition comprising a silicone resin and a siloxane crosslinking agent, and an encapsulant including the same.
OLED (Organic Light Emitting Diodes)는 유기 재료에 전류를 가하여 전기에너지를 빛으로 바꾸어주는 소자로 양극(anode)과 음극(cathode) 사이에 기능성 유기물층이 삽입된 구조로 이루어져 있다. 소자의 전기적인 특성은 LED(Light Emitting Diodes)와 유사하며 양극에서 정공(hole)이 주입되고 음극에서 전자 (electron)가 주입된 후 각각의 정공과 전자는 서로 상대편 전극을 향해 이동하다가 재결합 (recombination)에 의해 에너지가 높은 여기 전자(exciton)를 형성하게 된다. 이때 형성된 여기 전자가 기저 상태(ground state)로 이동하면서 특정한 파장을 갖는 빛이 발생 되도록 하는 디스플레이 기술이다. OLED를 이용한 디스플레이의 장점은 자체발광, 고속응답, 광시야각, 초박형, 고화질, 내구성, 넓은 온도 범위 등 디스플레이로서 필요한 모든 요소를 갖추고 있어 이상적인 디스플레이로 각광받고 있다.OLED (Organic Light Emitting Diodes) is an element that converts electrical energy into light by applying electric current to organic materials and consists of a structure in which a functional organic material layer is inserted between an anode and a cathode. The electrical characteristics of the device are similar to LEDs (Light Emitting Diodes). After holes are injected from the anode and electrons are injected from the cathode, the holes and electrons move toward each other and then recombine. ), High energy excitons are formed. In this case, as the excitation electrons formed are moved to the ground state, the display technology generates light having a specific wavelength. The advantages of OLED display are spotlighted as the ideal display because it has all the necessary elements such as self-luminous, high-speed response, wide viewing angle, ultra-thin, high definition, durability, and wide temperature range.
OLED는 구동 방식에 따라 PM(passive matrix) OLED와 AM(active matrix) OLED로 나뉘며, PM의 경우 양극과 음극 사이의 교차점에서 발광이 되도록 설계된 구조로 제작이 용이하고 중소형 제품에 응용/생산이 가능하여 현재 mobile용 제품으로 생산되고 있다. AM의 경우 각각의 화소에 구동을 담당하는 TFT가 붙어있어 화소를 독립적으로 구동시켜 저소비전력과 우수한 해상도 구현이 용이하나 각 픽셀 당 2~4개 정도의 TFT가 필요하여 공정이 많고 복잡하여 양산적용에 어려움이 있으나 향후 대형화 및 고해상도 디스플레이에 적용하기 위해서는 AM OLED가 가장 적합하다고 할 수 있다. PM OLED의 양산 이후 꾸준히 개발되어 오던 AM OLED는 최근 모바일용 양산을 시작으로 디스플레이로서 확고한 자리를 구축하기 위한 시도가 전세계적으로 확산되어지고 있다. OLED is divided into passive matrix (PM) OLED and active matrix (AM) OLED according to the driving method, and in the case of PM, it is designed to emit light at the intersection point between anode and cathode, which makes it easy to manufacture and can be applied / produced for small and medium products. It is currently produced as a mobile product. In case of AM, each pixel has a TFT that is in charge of driving, so it is easy to realize low power consumption and excellent resolution by driving pixels independently, but it requires 2 ~ 4 TFTs for each pixel, so it has many processes and is complicated for mass production. Although it is difficult, AM OLED can be said to be the most suitable for large size and high resolution display in the future. AM OLED, which has been developed steadily since the mass production of PM OLED, has recently been spreading around the world to establish a solid position as a display, starting with mass production for mobile.
일반적으로 AM OLED의 수명은 TV의 경우 30,000시간 이상, 모니터용에서는 50,000시간 이상을 요구하고 있으나 PDP나 LCD의 수명에 비교한다면 짧은 것으로 발표되고 있다. 이러한 상대적 약점을 보완하기 위해 OLED 소자를 개발하는 연구진들은 끊임없이 수명 연장에 대한 연구를 진행하고 있다. 제품의 수명에 대한 연구는 발광층 또는 공통층의 재료 개발로 해결을 하려는 시도도 있지만 AM OLED의 광추출 효율 증가 기술과 산소와 수분에 민감한 재료를 보호하기 위한 봉지 기술(encapsulation Technology)은 패널 업체의 성공을 좌우하는 기술로 알려지고 있다. In general, the life of AM OLED requires more than 30,000 hours for TV and 50,000 hours for monitor, but it is announced that it is short compared to the life of PDP or LCD. To compensate for this relative weakness, researchers developing OLED devices are constantly working on extending the lifespan. While research on the life of the product has been attempted to solve the development of the material of the light emitting layer or the common layer, the technology of increasing the light extraction efficiency of AM OLED and encapsulation technology to protect the oxygen and moisture sensitive materials are It is known as a technology that determines success.
OLED를 봉지하는 방식에는 유리/금속 캔을 이용한 봉지 방법, 박막 봉지 방법 그리고 박막과 유리를 동시에 이용하는 hybrid 봉지 방법의 3가지가 있다. 유리/금속 캔을 이용하는 방식은 일정한 형태로 가공된 유리나 금속 캔의 내부에 흡습제를 부착하고 캔과 소자를 광경화성 수지로 고정시키는 것이다. 이러한 방식은 현재 2인치 이하의 PM OLED에 적용되어 양산되고 있다. 금속 캔을 이용한 봉지 방식은 AM OLED에서 요구되는 전면 발광 구조를 사용할 수 없으며 패널의 크기에 비례하여 변형이 심해지고 무게가 급격히 무거워지는 단점이 있다. 유리 캔을 이용한 봉지 방식은 전면 발광 구조에 채택은 가능하나 패널의 크기가 증가함에 따라서 외부충격에 의한 파손 가능성이 매우 높아진다. 또한 기존에 사용하는 흡습제는 불투명하기 때문에 AM OLED에 적용하기 위해서는 이를 대체할 기술이 개발되어야만 한다.There are three ways of encapsulating OLED: encapsulation method using glass / metal can, encapsulation method of thin film, and hybrid encapsulation method using both thin film and glass simultaneously. The method of using glass / metal cans is to attach a moisture absorbent to the inside of a glass or metal can that has been processed to a certain shape, and to fix the can and the device with a photocurable resin. This method is currently being applied to mass production of PM OLED of 2 inches or less. The encapsulation method using a metal can cannot use the front light emitting structure required in AM OLED, and has a disadvantage in that the deformation is severe and the weight is rapidly heavy in proportion to the size of the panel. The encapsulation method using glass cans can be adopted for the front light emitting structure, but as the size of the panel increases, the possibility of damage due to external shock becomes very high. In addition, the existing absorbents are opaque, so in order to apply them to AM OLEDs, a technology to replace them must be developed.
이에 본 발명은 상기 문제점을 해결하기 위하여 안출된 것으로서, 본 발명은 유기발광 소자의 수분, 산소의 차단을 높이며, 내구성, 광학적 특성을 높이고 공정 시간 단축을 위한 액상 봉지재 조성물을 제공하는 것을 목적으로 한다.Accordingly, the present invention has been made to solve the above problems, the present invention is to provide a liquid sealing material composition for increasing the blocking of water, oxygen, durability, optical properties of the organic light emitting device and shorten the process time. do.
또한, 본 발명은 상기 봉지재 조성물을 포함하는 봉지재를 제공하고자 한다.In addition, the present invention is to provide an encapsulant including the encapsulant composition.
상기와 같은 기술적 과제를 달성하기 위한 본 발명은, 화학식 1의 실리콘 수지 및 화학식 2의 실록산 가교제를 포함하는 발광 다이오드 소자용 봉지재 조성물을 제공한다.The present invention for achieving the above technical problem, provides an encapsulant composition for a light emitting diode device comprising a silicone resin of formula (1) and a siloxane crosslinking agent of formula (2).
본 발명의 일 구체예에 따르면 상기 화학식 1의 실리콘 수지는 전체 조성물 중 55 내지 95중량%로 포함되며, 상기 화학식 2의 실록산 가교제는 전체 조성물 중 4 내지 40중량%로 포함되는 것을 기술적 특징으로 한다.According to an embodiment of the present invention, the silicone resin of Chemical Formula 1 is included in the total composition of 55 to 95% by weight, and the siloxane crosslinking agent of Chemical Formula 2 is characterized in that it is included in 4 to 40% by weight of the total composition. .
본 발명의 다른 구체예에 따르면 본 발명에 따른 발광 다이오드 소자용 봉지재 조성물은 수소규소화촉매, 경화지연제, 접착강화제 등을 추가로 포함할 수 있다. According to another embodiment of the present invention, the encapsulant composition for a light emitting diode device according to the present invention may further include a hydrogen siliconization catalyst, a curing retardant, an adhesion strengthening agent, and the like.
상기 수소규소화촉매는 주기율표 제8족의 금속이나, 이들 금속을 알루미나, 실리카의 담체에 담지 시킨 촉매 또는 이들 금속의 염이나 착제일 수 있으며, 상기 수소규소화촉매는 전체 조성물 중 0.01 내지 3중량%로 포함될 수 있다.The hydrogen silicide catalyst may be a metal of Group 8 of the periodic table, a catalyst in which these metals are supported on a carrier of alumina or silica, or a salt or a complex of these metals, and the hydrogen silicide catalyst is 0.01 to 3 weight in the total composition. May be included as a%.
상기 경화지연제는 트리스(2,4-디-터셔리-부틸페닐)포스파이트(tris(2,4-di-tert-butylphenyl)phosphite) 또는 1-에티닐-1-시클로헥산올(1-ethynyl-1-cyclohexanol)일 수 있으며, 상기 접착강화제는 알콕시기를 포함하는 실란 화합물을 사용할 수 있다.The curing retardant is tris (2,4-di-tert-butylphenyl) phosphite or 1-ethynyl-1-cyclohexanol (1- ethynyl-1-cyclohexanol), and the adhesion enhancing agent may be a silane compound including an alkoxy group.
본 발명의 다른 구체예에 따르면 본 발명에 따른 봉지재 조성물은 스핀 코팅, 딥 코팅, 잉크젯 프린팅, 스프레이 코팅, 스크린 인쇄, 드롭 캐스팅, 도장법 또는 닥터 블레이드에 의해서 발광 다이오드 소자에 코팅되는 것을 기술적 특징으로 한다.According to another embodiment of the present invention is characterized in that the encapsulant composition according to the present invention is coated on a light emitting diode device by spin coating, dip coating, inkjet printing, spray coating, screen printing, drop casting, coating or doctor blade. do.
본 발명의 다른 양태는 상기 봉지재 조성물을 포함하는 발광 다이오드 소자용 봉지재에 관한 것이다.Another aspect of the present invention relates to an encapsulant for a light emitting diode device comprising the encapsulant composition.
본 발명의 액상 봉지재 조성물은 모듈에 직접 도포함으로써 공정시간이 단축될 뿐 아니라, 이물관리도 용이한 장점이 있다. 또 모듈에 밀착력도 높기 때문에 다이오드 소자의 수분, 산소의 차단이 향상된다. The liquid encapsulation composition of the present invention has the advantage of not only shortening the process time by directly applying to the module, but also foreign matter management. In addition, since the adhesion to the module is high, the blocking of moisture and oxygen in the diode element is improved.
그리고 액상 봉지재 조성물을 사용함으로써 내열성, 내한성, 안정성, 높은 투과율과 가혹화 조건에서의 무황변의 특징이 있다.And by using the liquid encapsulation composition, there is a characteristic of heat resistance, cold resistance, stability, high transmittance and yellowing under harsh conditions.
또한 본 발명의 봉지재 조성물은 스크린프린팅에 적합한 요변성을 갖는다.In addition, the encapsulant composition of the present invention has a thixotropic property suitable for screen printing.
도 1은 본 발명(실시예 1 및 2)과 대조군(비교예 1 및 2) 봉지재의 투과도를 측정한 결과 그래프이다.
도 2는 실시예 1에 따른 봉지재 조성물을 스크린 인쇄하여 형성된 본 발명의 봉지재를 관찰한 주사전자현미경 사진이다.
도 3은 비교예 1에 따른 봉지재 조성물을 스크린 인쇄하여 형성된 대조군 봉지재를 관찰한 주사전자현미경 사진이다.
도 4는 실시예 1에 따른 봉지재 조성물을 스크린 인쇄하여 형성된 본 발명 봉지재의 전단응력 및 점도를 측정한 결과 그래프이다.
도 5는 실시예 2에 따른 봉지재 조성물을 스크린 인쇄하여 형성된 본 발명 봉지재의 전단응력 및 점도를 측정한 결과 그래프이다.1 is a graph showing the results of measuring the permeability of the present invention (Examples 1 and 2) and the control group (Comparative Examples 1 and 2).
2 is a scanning electron microscope photograph of the encapsulant of the present invention formed by screen printing an encapsulant composition according to Example 1;
3 is a scanning electron micrograph of the control encapsulant formed by screen printing the encapsulant composition according to Comparative Example 1;
Figure 4 is a graph of the results of measuring the shear stress and viscosity of the present invention encapsulant formed by screen printing the encapsulant composition according to Example 1.
Figure 5 is a graph of the results of measuring the shear stress and viscosity of the present invention encapsulant formed by screen printing the encapsulant composition according to Example 2.
본 발명은 화학식 1의 실리콘 수지 및 화학식 2의 실록산 가교제를 포함하는 발광 다이오드 소자용 봉지재 조성물에 관한 것이다.The present invention relates to an encapsulant composition for a light emitting diode device comprising a silicone resin of formula (1) and a siloxane crosslinking agent of formula (2).
[화학식 1][Formula 1]
R1 aSiO(4-a)/2 R 1 a SiO (4-a) / 2
상기 화학식 1에서, R1은 탄소 수 1 내지 10의 비치환 또는 치환된 1가의 탄화수소기를 나타내고, 바람직하게는 탄소 수 1 내지 8의 비치환 또는 치환된 1가의 탄화수소기이며, R1 중 2개 이상은 비닐기이고, a는 1.90 내지 2.05이다.In Formula 1, R 1 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, preferably an unsubstituted or substituted monovalent hydrocarbon group having 1 to 8 carbon atoms, and two of R 1 The above is a vinyl group and a is 1.90-2.05.
여기서, 상기 R1으로 표시되는 규소 원자에 결합한 비치환 또는 치환된 1가의 탄화수소기로는, 예를 들면 메틸기, 에틸기, 프로필기, 이소프로필기, 부틸기, 이소부틸기, tert-부틸기, 펜틸기, 네오펜틸기, 헥실기, 시클로헥실기, 옥틸기, 노닐기, 데실기 등의 알킬기, 페닐기, 톨릴기, 크실릴기, 나프틸기 등의 아릴기, 벤질기, 페닐에틸기, 페닐프로필기 등의 아랄킬기, 비닐기, 알릴기, 프로페닐기, 이소프로페닐기, 부테닐기, 헥세닐기, 시클로헥세닐기, 옥테닐기 등의 알케닐기나, 이들 기의 수소 원자의 일부 또는 전부를 불소, 브롬, 염소 등의 할로겐 원자, 시아노기 등으로 치환한 것, 예를 들면 클로로메틸기, 클로로프로필기, 브로모에틸기, 트리플루오로프로필기, 시아노에틸기 등일 수 있으며, 전체 R1의 90 몰% 이상이 메틸기인 것이 바람직하다.Here, as the unsubstituted or substituted monovalent hydrocarbon group bonded to the silicon atom represented by R 1 , for example, methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, pen Aryl groups, such as phenyl group, tolyl group, xylyl group, naphthyl group, benzyl group, phenylethyl group, phenylpropyl group Alkenyl groups such as aralkyl groups, vinyl groups, allyl groups, propenyl groups, isopropenyl groups, butenyl groups, hexenyl groups, cyclohexenyl groups, octenyl groups, and the like, or some or all of the hydrogen atoms of these groups are fluorine, Substituted by halogen atoms such as bromine and chlorine, cyano groups, and the like, for example, may be chloromethyl group, chloropropyl group, bromoethyl group, trifluoropropyl group, cyanoethyl group and the like, 90 mol% of the total R 1 It is preferable that the above is a methyl group.
상기 화학식 1로 표시되는 실리콘 수지는 봉지재 형성시 코팅, 충진, 흡습 특성 등을 발현하는 역할을 하는 것으로, 그 함량은 전체 조성물 중 55 ~ 95중량%를 함유하는 것이 바람직하다.The silicone resin represented by Chemical Formula 1 serves to express coating, filling, and hygroscopic properties when forming an encapsulant, and the content thereof is preferably 55 to 95% by weight in the total composition.
이때 실리콘 수지가 상기의 중량 미만일 때는 점도가 매우 낮아 스크린 프린팅에 적합하지 않으며, 상기 중량을 초과할 때에는 점도가 매우 높아 스크린 프린팅용 마스크의 메쉬자국이 생길뿐만 아니라 균일한 패턴을 얻기 힘들다.In this case, when the silicone resin is less than the weight, the viscosity is very low, which is not suitable for screen printing. When the silicone resin is more than the weight, the viscosity is very high, and it is difficult to obtain a uniform pattern as well as mesh marks of the screen printing mask.
[화학식 2][Formula 2]
상기 화학식 2에서, R은 탄소 수 1 내지 10의 알킬기, 아릴기 및 시클로알킬기로 이루어진 군에서 선택되는 어느 하나이고, n은 2 내지 1,000의 정수이다.In Formula 2, R is any one selected from the group consisting of an alkyl group having 1 to 10 carbon atoms, an aryl group and a cycloalkyl group, n is an integer of 2 to 1,000.
상기 화학식 2로 표시되는 실록산 가교제는 전체 조성물 중 4 ~ 40중량%를 함유하는 것이 코팅 및 경화 측면에서 바람직하며, 실록산 가교제가 상기의 중량 미만일 때는 충분한 경화가 일어나지 않아 경도가 약하고, 상기의 중량을 초과할 때는 경성(Rigid)을 띠지않고 플렉서블(연성)하게 된다. The siloxane crosslinking agent represented by the formula (2) preferably contains 4 to 40% by weight of the total composition in terms of coating and curing, and when the siloxane crosslinking agent is less than the above weight, sufficient curing does not occur, so the hardness is weak, and the weight When it is exceeded, it becomes flexible without being rigid.
본 발명에 따른 발광 다이오드 소자용 봉지재 조성물은 수소규소화촉매, 경화지연제 및 접착강화제로 이루어진 군으로부터 선택되는 하나 이상을 더 포함할 수 있다.The encapsulant composition for a light emitting diode device according to the present invention may further include at least one selected from the group consisting of a hydrogen silicide catalyst, a curing retardant, and an adhesive strengthening agent.
본 발명에서, 상기 수소규소화촉매는 수소규소화반응을 통해 실리콘 수지를 경화하는데 있어 촉매로 작용하는 것으로, 예를 들면 주기율표 제8족의 금속이나, 상기 금속을 알루미나, 실리카 등의 담체에 담지시킨 촉매 또는 상기 금속의 염이나 착제 등일 수 있다. 상기 주기율표 제8족의 금속으로는 백금, 로듐, 팔라듐, 루테늄, 이리듐 또는 이들의 조합을 사용할 수 있고, 바람직하게는 백금을 사용할 수 있다. 상기 수소규소화촉매는 그 함량이 특별히 제한적인 것은 아니나, 바람직하게는 전체 조성물 중 0.01 ~ 3중량%로 포함될 수 있다. In the present invention, the hydrogen silicide catalyst acts as a catalyst in curing the silicone resin through hydrogen silicide reaction, for example, a metal of Group 8 of the periodic table, or the metal is supported on a carrier such as alumina or silica. It may be a catalyst or a salt or a complex of the metal. Platinum, rhodium, palladium, ruthenium, iridium, or a combination thereof may be used as the metal of Group 8 of the periodic table, and platinum may be preferably used. The hydrogen silicide catalyst is not particularly limited in content, but preferably may be included in 0.01 to 3% by weight of the total composition.
이는 수소규소화촉매를 상기의 중량 미만으로 첨가할 때에는 경화반응이 일어나지 않으며, 상기의 중량을 초과하여 첨가할 때에는 교반 중에 경화가 되어 굳어버리는 현상이 있다. This hardening reaction does not occur when the hydrogen silicide catalyst is added below the weight. When the hydrogen silicide catalyst is added above the weight, it hardens during stirring and hardens.
본 발명에서, 상기 경화지연제는 그 종류가 특별히 제한되는 것은 아니나, 포스파이트 계열 또는 아세틸렌 계열이 사용될 수 있으며, 바람직하게는 트리스(2,4-디-터셔리-부틸페닐)포스파이트(tris(2,4-di-tert-butylphenyl)phosphite) 또는 1-에티닐-1-시클로헥산올(1-ethynyl-1-cyclohexanol)을 사용할 수 있다.In the present invention, the curing retardant is not particularly limited in kind, phosphite-based or acetylene-based may be used, preferably tris (2,4-di- tert-butylphenyl) phosphite (tris (2,4-di-tert-butylphenyl) phosphite) or 1-ethynyl-1-cyclohexanol can be used.
본 발명에서, 상기 접착강화제는 그 종류가 특별히 제한되는 것은 아니나, 알콕시기를 포함하는 실란 화합물을 사용할 수 있으며, 예를 들면 비닐트리메톡시실란(vinyltrimethoxysilane), 비닐트리에톡시실란(vinyltriethoxysilane), 2-(3,4-에폭시시클로헥실)에틸트리메톡시실란(2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane), 3-글리시독시프로필트리메톡시실란(3-glycidoxypropyltrimethoxysilane), 3-글리시독시프로필메틸디에톡시실란(3-glycidoxypropylmethyldiethoxysilane), 3-글리시독시프로필트리에톡시실란(3-glycidoxypropyltriethoxysilane), p-스티릴트리메톡시실란(p-styryltrimethoxysilane), 3-메타크릴록시프로필메틸디에톡시실란(3-methacryloxypropylmethyldiethoxysilane), 3-메타크릴록시프로필트리메톡시실란(3-methacryloxypropyltrimethoxysilane), 3-메타크릴록시프로필메틸디에톡시실란(3-methacryloxypropylmethyldiethoxysilane), 3-메타크릴록시프로필트리에톡시실란(3-methacryloxypropyltriethoxysilane), 3-아크릴록시프로필트리메톡시실란(3-acryloxypropyltrimethoxysilane), 3-우레이도프로필트리에톡시실란(3-ureidopropyltriethoxysilane), 3-클로로프로필트리메톡시실란(3-chloropropyltrimethoxysilane), 3-메르캅토프로필메틸디메톡시실란(3-mercaptopropylmethyldimethoxysilane), 3-메르캅토프로필트리메톡시실란(3-mercaptopropyltrimethoxysilane) 및 3-이소시아네이트프로필트리에톡시실란(3-isocyanatepropyltriethoxysilane) 등이 사용될 수 있다.In the present invention, the adhesion strengthening agent is not particularly limited, but may be used a silane compound containing an alkoxy group, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyl 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane (3-methacryloxypropylmethyldiethoxysilane), 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-chloropropyl tree 3-chloropropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane and 3-isocyanatepropyltriethoxysilane (3- isocyanatepropyltriethoxysilane) and the like can be used.
본 발명의 봉지재 조성물은 사용 목적을 손상시키지 않는 범위 내에서 불활성 충전제, 보강성 또는 비보강성 충전제, 살균제, 항료, 유동학적 첨가제, 부식억제제, 산화 억제제, 광 안정화제, 난연제, 전기적 특성에 영향을 미치는 제제, 분산제, 용매, 결합제, 안료, 염료, 가소화제, 유기 중합체, 열 안정화제, 산화물 또는 질화물의 나노입자, 방염제, 내열제, 레벨링제 등의 첨가제를 추가로 포함할 수 있다.The encapsulant composition of the present invention affects inert fillers, reinforcing or non-reinforcing fillers, fungicides, paints, rheological additives, corrosion inhibitors, oxidation inhibitors, light stabilizers, flame retardants, and electrical properties within a range that does not impair the purpose of use. Additives such as agents, dispersants, solvents, binders, pigments, dyes, plasticizers, organic polymers, heat stabilizers, nanoparticles of oxides or nitrides, flame retardants, heat resistant agents, leveling agents and the like.
상기 봉지재 조성물은 용액공정으로 발광 다이오드 소자에 직접 코팅될 수 있고, 구체적으로, 스핀 코팅, 딥 코팅, 잉크젯 프린팅, 스프레이 코팅, 스크린 인쇄, 드롭 캐스팅, 도장법 또는 닥터 블레이드 등에 의해서 코팅될 수 있다.The encapsulant composition may be directly coated on a light emitting diode device by a solution process, and specifically, may be coated by spin coating, dip coating, inkjet printing, spray coating, screen printing, drop casting, coating, or a doctor blade.
또한, 본 발명은 상기 봉지재 조성물을 포함하는 발광 다이오드 소자용 봉지재를 제공한다.
The present invention also provides an encapsulant for a light emitting diode device comprising the encapsulant composition.
이하 본 발명을 실시예에 의해 상세히 설명한다.Hereinafter, the present invention will be described in detail by way of examples.
단, 하기 실시예는 본 발명의 내용을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 의해 한정되는 것은 아니다.However, the following examples are merely to illustrate the content of the present invention is not limited to the scope of the present invention.
실시예Example 1 ~ 2 : 1 to 2: 봉지재Encapsulant 조성물의 제조 Preparation of the composition
하기 표 1에 기재된 원료를 혼합 및 교반하여 본 발명에 따른 봉지재 조성물을 제조하였다.The raw materials shown in Table 1 were mixed and stirred to prepare an encapsulant composition according to the present invention.
- 실리콘 수지 : 비닐 실리콘 폴리머 (점도 100K cps, 10K cps) / ㈜한국엠큐-Silicone Resin: Vinyl Silicone Polymer (viscosity 100K cps, 10K cps) / MQ Korea
- 실록산 가교제 : 하이드로겐 실리콘폴리머 / ㈜한국엠큐-Siloxane crosslinker: Hydrogen Silicone Polymer / MQ Korea
- 수소규소화촉매 : platinum(0) and divinyltetramethyldisiloxane / ㈜한국엠큐-Hydrogen Silicate Catalyst: platinum (0) and divinyltetramethyldisiloxane / MQ Korea
- 레벨링제 : 아크릴레이트계 수지 / 공영사-Leveling agent: acrylate resin / public company
- 경화지연제 : 트리스(2,4-디터셔리-부틸페닐)포스파이트 / 시그마 알드리치-Curing retardant: Tris (2,4-di-butylphenyl) phosphite / Sigma Aldrich
- 접착강화제 : 실란커플링제(비닐트리메톡시실란) / 신에츠-Adhesive Strengthening Agent: Silane Coupling Agent (Vinyl Trimethoxysilane) / Shin-Etsu
비교예Comparative example 1 ~ 2 : 1 to 2: 봉지재Encapsulant 조성물의 제조 Preparation of the composition
하기 표 2에 기재된 원료를 혼합 및 교반하여 대조군 봉지재 조성물을 제조하였다.To prepare a control encapsulant composition by mixing and stirring the raw materials shown in Table 2 below.
- 에폭시 수지 : Bis A epoxy (YDF 128) / 국도화학-Epoxy Resin: Bis A epoxy (YDF 128) / Kukdo Chemical
- 경화제 : 이미다졸계 경화제 (2PZCN) / 일동화학-Curing agent: imidazole series curing agent (2PZCN) / Ildong Chemical
- 첨가제 : 실란 커플링제 (B307) / BYKAdditive: Silane coupling agent (B307) / BYK
- 무기필러 : 산화마그네슘 파우더 (Talc) / 한국펄공업주식회사-Inorganic filler: magnesium oxide powder (Talc) / Korea Pearl Industry Co., Ltd.
- 티올계 화합물 : 멘타-8-티올-3-온(Mentha-8-thiol-3-one) / 시그마 알드리치 코리아 -Thiol compounds: Menta-8-thiol-3-one / Sigma Aldrich Korea
실시예Example 3 : 발광 다이오드 소자용 3: light emitting diode element 봉지재Encapsulant 제조 Produce
상기 실시예 1 내지 2 및 비교예 1 내지 2에 따라 제조된 봉지재 조성물을 스크린인쇄 방법으로 OLED에 소자에 직접 코팅하여 시트로 성형한 후에 100℃에서 2시간 동안 가열 및 경화시켜, 두께 10㎛의 봉지재층을 포함하는 발광 다이오드 소자를 얻었다.The encapsulant composition prepared according to Examples 1 to 2 and Comparative Examples 1 to 2 was directly coated on the device in the OLED by the screen printing method, molded into a sheet, and then heated and cured at 100 ° C. for 2 hours, and the thickness was 10 μm. The light emitting diode element containing the sealing material layer of was obtained.
실험예Experimental Example 1 : 봉지재의 1: of encapsulant 광투과율Light transmittance 측정 Measure
실시예 3에서 제조된 발광 다이오드 소자용 봉지재에 대하여 UV-Visible Spectrophotometer를 이용하여 300㎚ 내지 800㎚의 가시광선 영역에서 투과도를 측정하였다. (도 1)The transmittance of the encapsulant for the LED device manufactured in Example 3 was measured in the visible light region of 300 nm to 800 nm using a UV-Visible Spectrophotometer. (Figure 1)
도 1에 나타낸 바와 같이 본 발명의 봉지재 조성물을 경화시켜 얻은 봉지재는 광투과율이 100% 이상으로, 투명성을 확보할 수 있음을 확인하였다. 이러한 결과로부터 본 발명의 봉지재는 광을 차단하지 않아 광투과율이 우수하여 양면 발광형 디스플레이 소자에 적용할 수 있을 것으로 기대된다.As shown in FIG. 1, the encapsulant obtained by curing the encapsulant composition of the present invention has a light transmittance of 100% or more, confirming that transparency can be ensured. From these results, the encapsulant of the present invention is expected to be applicable to a double-sided light emitting display device because it does not block light and has excellent light transmittance.
실험예Experimental Example 2 : 봉지재의 2: of encapsulant 황변Yellowing 지수 측정 Index measurement
실시예 3에서 제조된 발광 다이오드 소자용 봉지재에 대하여 Konica Minolta 사의 Spectrophotometer CM-3700d를 사용하여 황변 지수를 측정하였다. (표 3)The yellowing index of the light emitting diode device encapsulation material prepared in Example 3 was measured using a Spectrophotometer CM-3700d manufactured by Konica Minolta. Table 3
상기 표 3에 나타낸 바와 같이 본 발명의 봉지재는 대조군 봉지재에 비하여 황변 현상이 현저히 개선되었음을 확인하였다.As shown in Table 3, the encapsulant of the present invention was confirmed that the yellowing phenomenon is significantly improved compared to the control encapsulant.
실험예Experimental Example 3 : 봉지재의 표면 3: surface of encapsulant MophologyMorphology 측정 Measure
실시예 3에서 제조된 발광 다이오드 소자용 봉지재에 대하여 Optical microscope를 사용하여 패턴 모양을 확인하여 표면 Mophology를 측정하였고, 결과는 도 2 및 3에 나타내었다.For the light emitting diode device encapsulation material prepared in Example 3, the pattern shape was measured using an optical microscope to measure surface morphology, and the results are shown in FIGS. 2 and 3.
도 2 및 3으로부터 본 발명의 봉지재(도 2)는 대조군 봉지재(도 3)에 비하여 균일한 표면 특성을 나타내고 있으며, 본 발명의 봉지재는 패턴의 직진성이 좋아 스크린 프린팅에 적합한 재료임을 알 수 있다.2 and 3 shows that the encapsulant of the present invention (FIG. 2) exhibits uniform surface properties as compared to the control encapsulant (FIG. 3), and the encapsulant of the present invention has good pattern straightness and is suitable for screen printing. have.
실험예Experimental Example 4 : 봉지재의 전단 응력, 점도 측정 4: measurement of shear stress and viscosity of encapsulant
실시예 3에서 제조된 발광 다이오드 소자용 봉지재에 대하여 TA社의 Rheologymeter를 사용하여 Frequency에 따른 점도의 변화 측정하였고, 이를 이용하여 틱소트로피 인덱스값(전단 응력(shear stress), 점도(viscosity))을 계산하였다. 결과는 도 4 내지 5 및 표 4 내지 5에 나타내었다.The viscosity of the light emitting diode device encapsulation material manufactured in Example 3 was measured according to frequency using a rheometer of TA, and the thixotropy index value (shear stress, viscosity) was used. Was calculated. The results are shown in FIGS. 4-5 and Tables 4-5.
실험예Experimental Example 5 : 봉지재의 5: encapsulation material 요변성Thixotropic 계수 측정 Coefficient measurement
실시예 3에서 제조된 발광 다이오드 소자용 봉지재에 대하여 TA社의 Rheologymeter를 사용하여 Frequency에 따른 점도의 변화 측정하였고, 이를 이용하여 요변성 계수(thixotropy index, TI)는 하기 식으로 계산하였다. 결과는 표 6에 나타내었다.The viscosity of the light-emitting diode device encapsulation material prepared in Example 3 was measured using a Rheologymeter of TA, and the thixotropy index (TI) was calculated using the following equation. The results are shown in Table 6.
T.I=[x RPM에서의 점도 / 10x RPM에서의 점도]T.I = [viscosity at x RPM / viscosity at 10x RPM]
x는 1~5x is 1 to 5
일반적으로 스크린프린팅에 적합한 T.I는 1.2 이하임을 고려할 때, 본 발명의 봉지재는 스크린 프린팅에 적합한 재료임을 알 수 있다.In general, considering that T.I suitable for screen printing is 1.2 or less, it can be seen that the encapsulant of the present invention is a material suitable for screen printing.
표 6에 나타낸 바와 같이, 실시예 1의 조성물로 제조한 봉지재는 전단속도 2.759와 25.94의 점도로 계산한 요변성 값이 1.097이었고, 실시예 2의 조성물로 제조한 봉지재는 전단속도 2.721과 25.87의 점도로 계산한 요변성 값이 1.076으로서, 본 발명의 봉지재는 요변성 특성이 있음을 확인하였다.As shown in Table 6, the encapsulant prepared by the composition of Example 1 had a thixotropic value of 1.097, which was calculated from the viscosity of 2.759 and 25.94, and the encapsulant prepared by the composition of Example 2 had a shear rate of 2.721 and 25.87. The thixotropic value calculated by viscosity was 1.076, and it was confirmed that the encapsulant of the present invention had a thixotropic property.
Claims (12)
상기 화학식 1의 실리콘 수지가 전체 조성물 중 70 내지 80중량%로 포함되고,
상기 화학식 2의 실록산 가교제가 전체 조성물 중 18 내지 28중량%로 포함되는,
발광 다이오드 소자용 봉지재 조성물.
[화학식 1]
R1 aSiO(4-a)/2
(상기 화학식 1에서, R1은 탄소 수 1 내지 10의 비치환 또는 치환된 1가의 탄화수소기를 나타내고, R1 중 2개 이상은 비닐기이고, a는 1.90 내지 2.05이다.)
[화학식 2]
(상기 화학식 2에서, R은 탄소 수 1 내지 10의 알킬기, 아릴기 및 시클로알킬기로 이루어진 군에서 선택되는 어느 하나이고, n은 2 내지 1,000의 정수이다.)Silicone resin of formula 1 and siloxane crosslinking agent of formula 2,
Silicone resin of Formula 1 is included in 70 to 80% by weight of the total composition,
The siloxane crosslinking agent of Formula 2 is included in 18 to 28% by weight of the total composition,
Encapsulant composition for light emitting diode elements.
[Formula 1]
R 1 a SiO (4-a) / 2
(In Formula 1, R 1 represents an unsubstituted or substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, at least two of R 1 are vinyl groups, and a is 1.90 to 2.05.)
[Formula 2]
(In Formula 2, R is any one selected from the group consisting of an alkyl group having 1 to 10 carbon atoms, an aryl group and a cycloalkyl group, n is an integer of 2 to 1,000.)
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