KR102051914B1 - Metallized thin film for metallized film capacitor - Google Patents

Abstract

According to the present invention, a heat conduction layer may be formed between the dielectric film and the thin film metal electrode layer, thereby easily dissipating heat that may be generated due to high energy charge / discharge or ring current, and the mechanical strength by forming the heat conduction layer using graphene. The thin film metal deposition film for a metal deposition film capacitor which can improve the, The thin film metal deposition film for a metal deposition film capacitor of the present invention is a dielectric film; A thermal conductive layer formed on the surface of the dielectric film; And a thin metal electrode layer formed on the surface of the thermal conductive layer, wherein the thermal conductive layer is made of graphene.

Description

Metallized Film for Metallized Film Capacitors {Metallized thin film for metallized film capacitor}

The present invention relates to a thin film metal deposition film for a metal deposition film capacitor, and in particular, to form a heat conduction layer between the dielectric film and the thin film metal electrode layer to easily dissipate heat that may be generated due to high energy charge and discharge or loop current. The present invention relates to a thin film metal deposition film for a metal deposition film capacitor, which may improve mechanical strength by forming a thermal conductive layer using graphene.

The metal deposition film capacitor is formed by overlapping a thin film metal deposition film. In the thin film metal deposition film, a segmented electrode and a fuse are formed to self-healing the surface of the dielectric film. Self-recovery is to protect the metal deposited film capacitor by causing the fuse to be heated and evaporated when the dielectric breakdown occurs in the metal deposited film capacitor, this related technology is disclosed in Korea Patent No. 836567.
Korean Patent No. 836567 relates to a metallized plastic film for film metal deposition film capacitors, and includes a split electrode part and a fuse part. The split electrode portion is formed in a rectangular shape from the margin portion on one side where the electrode metal is not deposited to the other side in the film width direction from 1/4 to 4/5 of the film width, and the fuse portion is formed from the split electrode at the end of the margin portion to the electrode. It is formed to be patterned to be formed at any one of the portions in contact with the metal to be continuously formed at a predetermined interval along the longitudinal direction of the film.
The metallized plastic film for the film metal deposition film capacitor, ie, the conventional metal deposition film capacitor described in Korean Patent Registration No. 836567, is formed by depositing only the metal on the dielectric film. When formed very thin, self healing by the fuse part is easy, but when heat is generated by high energy charge / discharge or high ripple current, the generated heat is not easily discharged by the dielectric film. Heat condensation occurs in this, which causes a problem of reducing the life of the metal deposition film capacitor.

Korean Patent Registration No. 836567

An object of the present invention is to solve the above-mentioned problems, by forming a heat conduction layer between the dielectric film and the thin film metal electrode layer can easily discharge heat that can be generated due to high energy charge and discharge or ring current, The present invention provides a thin film metal deposition film for a metal deposition film capacitor capable of improving mechanical strength by forming a thermal conductive layer using graphene.
Another object of the present invention is to implement a high energy density by making it possible to easily discharge the heat that can be generated due to high energy charge and discharge or loop current, thin film for metal deposition film capacitors that can improve the product life In providing a metal deposition film.

The thin film metal deposition film for a metal deposition film capacitor of the present invention includes a dielectric film; A thermal conductive layer formed on the surface of the dielectric film; And a thin metal electrode layer formed on the surface of the thermal conductive layer, wherein the thermal conductive layer is made of graphene.

The thin film metal deposition film for the metal deposition film capacitor of the present invention has an advantage of easily dissipating heat that may be generated due to high energy charge / discharge or ring current by forming a thermal conductive layer between the dielectric film and the thin film metal electrode layer. In addition, by forming the thermal conductive layer using graphene, there is an advantage of improving the mechanical strength, and by easily dissipating heat that can be generated due to high-energy charging and discharging or annular current to implement a high energy density And has the advantage of improving product life.

1 is a cross-sectional view of a thin film metal deposition film for a metal deposition film capacitor according to an embodiment of the present invention,
2 is a plan view of a dielectric film of the thin film metal deposition film for the metal deposition film capacitor shown in FIG.
3 is a cross-sectional view of a thin film metal deposition film for a metal deposition film capacitor according to another embodiment of the present invention;
4 is a plan view of a dielectric film of the thin film metal deposition film for the metal deposition film capacitor shown in FIG.
5 is a plan view of the thermal conductive layer of the thin film metal deposition film for the metal deposition film capacitor shown in FIG.
6 is a plan view of a thin film metal electrode layer of a thin film metal deposited film for a metal deposited film capacitor in FIG.
7 is a plan view of a thin film metal deposition film for the metal deposition film capacitor shown in FIG.

Hereinafter, an embodiment of a thin film metal deposition film for a metal deposition film capacitor of the present invention will be described with reference to the accompanying drawings.
As shown in FIGS. 1 and 2, the thin film metal deposition film 100 for the metal deposition film capacitor according to the embodiment of the present invention may include a dielectric film 110, a thermal conductive layer 120, a thin film metal electrode layer 130, and the like. And comprises a heavy edge 140. The dielectric film 110 generally supports the thin film metal deposition film 100 for the metal deposition film capacitor of the present invention, and the thermal conductive layer 120 is formed on the surface of the dielectric film 110. The thin film metal electrode layer 130 is formed on the surface of the thermal conductive layer 120, that is, the upper surface 120a, and the heavy edge 140 is one end of the upper surface 120a of the thin film metal electrode layer 130. Are formed in alignment. 1 is a cross-sectional view taken along line AA of a thin film metal deposition film for a metal deposition film capacitor of the present invention shown in FIG.
The configuration of the thin film metal deposition film 100 for a metal deposition film capacitor according to an embodiment of the present invention will be described in detail as follows.
The dielectric film 110 generally supports the thin film metal deposition film 100 for the metal deposition film capacitor of the present invention, as shown in FIGS. 1, 3, and 5, and includes an active region 111 and an inactive region 112. Divided. The active region 111 is set on one side of the dielectric film 110 on the top surface 110a or the bottom surface 110b of the dielectric film 110 based on the width direction Y of the dielectric film 110 to form the thermal conductive layer 120. The non-active area 112 is set smaller than the area of the active area 111 on the other side with respect to the width direction Y of the dielectric film 110. FIG. 5 illustrates an embodiment in which the active region 111 and the inactive region 112 are formed on the upper surface 110a of the dielectric film 110. When the active region 111 and the inactive region 112 are set, the thermal conductive layer 120 and the thin film metal electrode layer 130 are sequentially formed in the active region 111. In the active region 111, the thermal conductive layer 120 and the thin film metal electrode layer 130 are sequentially formed to form a thin film metal deposition film 100, and the thin film metal deposition film 100 overlaps the metal deposition film capacitor. The capacitance of the metal deposited film capacitor is determined during manufacturing (not shown).
The material of the dielectric film 110 may be polypropylene, polyethylene terephthalate polyester (PET), or polyphenylene sulfide (PPS) according to the capacitance and electrical characteristics of the metal deposition film capacitor. ), Polyethylene naphthalate (PEN), polyether imide (PEI) or polycarbonate (PC).
1 and 5, the thermal conductive layer 120 is formed on the surface of the dielectric film 110, that is, on the active region 11 of the upper surface 110a, and the material is graphene to improve thermal conductivity. ) Is used. Graphene is a material having a thermal conductivity of about 500 W / mK, that is, 400 to 600 W / mK at room temperature. That is, graphene is a two-dimensional material, a wave phenomenon called a second sound wave that transmits heat almost without loss at room temperature, and is a three-dimensional material that is thick in an extremely thin sheet state, that is, a thick member (not shown). It is known that phonons collide, bond and separate from one another when heat is transferred, limiting thermal conductivity, but operate similarly to the principle of almost no thermal conductivity loss at absolute zero (200 ° C). In the thin film metal deposition film 100 for the metal deposition film capacitor of the present invention, the thermal conductive layer 120 using the graphene material between the dielectric film 110 and the thin film metal electrode layer 130 has a thickness T1 of 1 to 30 kPa. It is formed so that the thick member is operated in a manner similar to the principle that the thermal conductivity loss almost disappears at absolute zero (less than 200 ℃) to improve the thermal conductivity.
The thermal conductive layer 120 is formed using one of a chemical vapor deposition (CVD) method, an epitaxial synthesis method, a laser irradiation method, and a dielectric film exposure method to form a thickness T1 of 1 to 30 GPa. . Here, a known method using graphene is applied to the CVD method and the epitaxy synthesis method, and the laser irradiation method uses carbon on the surface of the dielectric film 110 when the thermal conductive layer 120 is formed using graphene. After coating, carbon is formed by laser irradiation. For example, in the laser irradiation method, when the thickness T1 of the thermal conductive layer 120 is manufactured to 3 kW using graphene, carbon is applied to 1 to 30 kW, and then formed by laser irradiation. The dielectric film exposure method is formed by physically exposing the surface of the dielectric film 110 by one or more of pulsed laser exposure, RF plasma exposure, and E-beam exposure. do.
The thermal conductive layer 120 is formed of an ultra-thin thickness (T1) of 1 to 30Å by using graphene, the method of manufacturing the thermal conductive layer 120, first, the top surface 110a of the dielectric film 110 is a known surface Plasma treatment, which is a treatment method, removes contamination attached to the surface and forms a roughness of the surface of the upper surface 110a. When the plasma process is completed, the upper surface 110a of the dielectric film 110 is formed using one of the above-described chemical vapor deposition (CVD) method, epitaxial synthesis method, laser irradiation method, and dielectric film exposure method. . By forming the thermal conductive layer 120 using graphene, the thin film metal deposition film 100 for the metal deposition film capacitor of the present invention is excellent in thermal conductivity, mechanical strength and electrical conductivity.
The thin film metal electrode layer 130 is formed to have a thickness T2 of 30 to 999 박막 so that the thin film metal electrode layer 130 is evaporated at 0.1 to 10 mJ (milli joule) so that self healing occurs. The thin film metal electrode layer 130 is formed on the surface of the thermal conductive layer 120, that is, the upper surface 120a or the lower surface 120b as shown in FIGS. 1 and 2, and the material is aluminum (Al) or zinc (Zn). One of nickel (Ni), an alloy of aluminum (Al) and zinc (Zn), and an alloy of aluminum (Al) and nickel (Ni) is used. The lower surface 120b of the thermal conductive layer 120 is formed to contact the upper surface 110a of the dielectric film 110. 1 and 2 illustrate an embodiment in which the thin film metal electrode layer 130 is formed on the upper surface 120a of the thermal conductive layer 120, respectively.
As described above, the thin film metal deposition film 100 for the metal deposition film capacitor according to the exemplary embodiment of the present invention illustrated in FIGS. 1 and 2 includes the thermal conductive layer 120 and the thin film metal electrode layer 130 of the dielectric film 110. The upper and lower surfaces 110a and 110b are sequentially formed in the same single pattern 120 and 130, respectively. Here, the single patterns 120 and 130 are formed on the entire surface of the active region 111 of the upper surface 110a or the lower surface 110b of the dielectric film 110 and then the thin film metal deposition film 100 is formed. It is manufactured to be formed on the front of the surface of the thermal conductive layer 120. On the other hand, the thin film metal deposition film 100 for a metal deposition film capacitor according to another embodiment of the present invention shown in FIGS. 3 to 7 is formed on the top surface 110a or the bottom surface 110b of the dielectric film 110. The thermal conductive layer 120 and the thin film metal electrode layer 130 are the same as the thin film metal deposition film 100 shown in Figs. 1 and 2, but the thermal conductive layer 120 and the thin film metal electrode layer 130 are respectively There is a difference formed by the division patterns 121, 122, 123, 131, 132, and 133.
For example, as illustrated in FIG. 6, the thermal conductive layer 120 is formed of the divided patterns 121, 122, and 123, and the divided patterns 121, 122, and 123 include two or more segments 121 and 122 and two or more fuses 123. The two or more segments 121 and 122 are spaced apart from each other in the longitudinal direction X and the width direction Y of the dielectric film 110 on the upper surface 110a or the lower surface 110b of the surface of the dielectric film 110, respectively. It is formed spaced apart. 3 and 6 illustrate an embodiment in which the thermal conductive layer 120 is formed on the upper surface 110a of the dielectric film 110. Each of the two or more segments 121 and 122 may be formed in a quadrangle as shown in FIG. 6, or may be formed by mixing one or two or more shapes of a rhombus (not shown) and a triangle (not shown).
The detailed configuration of two or more segments 121 and 122 includes two or more common segments 121 and two or more divided segments 122, respectively. Two or more common segments 121 are formed to be spaced apart from each other in the longitudinal direction X of the dielectric film 110 on the upper surface 110a or the lower surface 110b of the surface of the dielectric film 110. The width direction Y of the dielectric film 110 on the upper surface 110a or the lower surface 110b of the surface of the dielectric film 110 so that the two or more divided segments 122 correspond to one common segment 121, respectively. Spaced apart from one common segment 121, spaced apart from each other in the longitudinal direction X of the dielectric film 110, and formed to be connected to the common segment 121 by two or more fuses 123. .
Two or more fuses 123 are respectively formed on the upper surface 110a or the lower surface 110b of the surface of the dielectric film 110 to connect, or electrically connect, two or more segments 121 and 122. FIG. 6 illustrates an embodiment in which two or more common segments 121 and two or more split segments 122 are each formed on the top surface 110a of the surface of the dielectric film 110.
The thin film metal electrode layer 130 is formed on the surface of the thermal conductive layer 120, that is, the upper surface 120a or the lower surface, as shown in FIGS. 3 and 7, and the material is aluminum (Al), zinc (Zn), or nickel (Ni). ), An alloy of aluminum (Al) and zinc (Zn) and an alloy of aluminum (Al) and nickel (Ni) is used. The lower surface 120b of the thermal conductive layer 120 is formed to contact the upper surface 110a of the dielectric film 110. 3, 4, and 7 illustrate an embodiment in which the thin film metal electrode layer 130 is formed on the upper surface 120a of the thermal conductive layer 120, and has the same division patterns 131, 132, and 133 as the thermal conductive layer 120. Is formed.
An embodiment of manufacturing the thin film metal electrode layer 130 is illustrated in FIG. 7. As shown in FIG. 7, the division patterns 121, 122, and 123 of the thin film metal electrode layer 130 include two or more segments 131 and 132 and two or more fuses 133. Two or more segments 131 and 132 are formed on the upper surface 120a of the thermal conductive layer 120 and spaced apart from each other in the longitudinal direction X and the width direction Y of the dielectric film 110. 3 and 7 illustrate an embodiment in which the thin film metal electrode layer 130 is formed on the upper surface 120a of the thermal conductive layer 120, and the two or more segments 131 and 132 are each formed in a quadrangle as shown in FIG. It is formed by mixing one or two or more shapes of, rhombus (not shown) and triangle (not shown).
The detailed configuration of two or more segments 131 and 132 includes two or more common segments 131 and two or more divided segments 132, respectively. The two or more common segments 131 are formed to be spaced apart from each other in the longitudinal direction X of the dielectric film 110 on the upper surface 120a of the thermal conductive layer 120. The two or more divided segments 132 each have one common segment 131 in the width direction Y of the dielectric film 110 on the top surface 120a of the thermal conductive layer 120 so as to correspond to one common segment 131. Spaced apart from and spaced apart from each other in the longitudinal direction (X) of the dielectric film 110 and formed to be connected to the common segment 131 by two or more fuses 133.
Two or more fuses 133 are formed on the upper surface 120a of the thermal conductive layer 120, respectively, to connect two or more segments 131 and 132, that is, to be electrically connected. FIGS. 3 and 7 respectively show two or more common segments. An embodiment in which 131 and two or more divided segments 132 are formed on the top surface 120a of the thermal conductive layer 120, respectively.
The fuse 133 formed on the thin film metal electrode layer 130 is evaporated at 0.1 to 10 mJ (milli joule) to generate self healing, and the thermal conductive layer 120 is formed on the thin film metal electrode layer 130. The fuse 133 may be damaged under the same condition as that of the evaporation to prevent electricity from being conducted. That is, the thermal conductive layer 120 is made of graphene using an ultra-thin thickness T1 of 1 to 30 kW, and the same as the condition that the fuse 133 of the thin film metal electrode layer 130 evaporates at 0.1 to 10 mJ (milli joule). The fuse 123 is opened by damaging the condition and causing the resistance to increase.
The heavy edge 140 is formed to be aligned at one end of the upper surface 120a of the thin film metal electrode layer 130 as shown in FIGS. 1 to 4. The heavy edge 140 may be formed during the formation of the thin film metal electrode layer 130 or may be separately formed as in the known method so as to electrically connect the thin film metal electrode layer 130 to an external terminal (not shown). In the thin film metal electrode layer 130 is used to facilitate the connection.
As described above, the thin film metal deposition film 100 for the metal deposition film capacitor of the present invention forms a thermal conductive layer 120 between the dielectric film 110 and the thin film metal electrode layer 130, the material of the thermal conductive layer 120 By using silver graphene, the thin film metal deposition film 100 for the metal deposition film capacitor of the present invention may easily discharge heat that may be generated due to high energy charge / discharge or ring current, and the thermal conductive layer 120 By forming using the graphene to prevent partial damage of the thin film metal deposited film 100 by heat to implement a high energy density and to improve the mechanical strength of the thin film metal deposited film 100.

The thin film metal deposited film for the metal deposited film capacitor of the present invention can be applied to the manufacturing industry of film metal deposited film capacitors.

100: thin film metal deposition film
110: dielectric film
120: thermal conductive layer
121,131: common segment
122,132: split segment
123,133: fuse
140: heavy edge

Claims (12)

Dielectric film;
A thermal conductive layer formed on a surface of the dielectric film; And
It includes a thin film metal electrode layer formed on the surface of the heat conductive layer,
The thermally conductive layer and the thin film metal electrode layer may be sequentially formed on the upper surface or the lower surface of the surface of the dielectric film in the same single pattern, respectively, and the single pattern may be the upper surface of the surface of the dielectric film. A thin film metal deposited film for metal deposited film capacitors, wherein the thin film metal electrode layer is formed on the front surface of the active region of the lower surface and is formed on the front surface of the heat conductive layer. The method of claim 1,
The dielectric film has an inactive area in which an upper surface or a lower surface is set on one side of the dielectric film in a width direction and a heat conductive layer is formed, and an inactive area set smaller than the area of the active area on the other side in the width direction of the dielectric film. It is divided into regions, and the material is polypropylene, polyethylene terephthalate polyester (PET), polyphenylene sulfide (PPS), polyethylene naphthalate (PEN), polyether Thin film metal deposition film for metal deposition film capacitors in which either imide (PEI) or polycarbonate (PC) is used. The method of claim 1,
The thermal conductive layer is a thin film metal deposition film for a metal deposition film capacitor using a graphene (graphene) material. The method of claim 3,
The graphene is a thin film metal deposition film for a metal deposition film capacitor is used that has a thermal conductivity of 400 to 600W / mK at room temperature. The method of claim 1,
The thermal conductive layer is a thin film metal deposition film for a metal deposition film capacitor having a thickness of 1 to 30Å. The method of claim 1,
The thermal conductive layer is formed of graphene using one of a chemical vapor deposition (CVD) method, an epitaxial synthesis method, a laser irradiation method, and a dielectric film exposure method, and the laser irradiation method is a thermal conductive layer using graphene. When carbon is formed on the surface of the dielectric film by coating carbon, the carbon is formed by irradiating with a laser. The dielectric film exposure method includes a pulsed laser exposure and an RF plasma exposure on the surface of the dielectric film. A thin film metal deposited film for a metal deposited film capacitor formed by physically exposing to at least one of a plasma exposure) and an electron beam exposure (E-beam exposure). The method of claim 1,
The thin film metal deposition film for a metal deposition film capacitor is formed so that the thin film electrode layer has a thickness of 30 to 999Å. The method of claim 1,
The thin film metal electrode layer is made of one of aluminum (Al), zinc (Zn), nickel (Ni), an alloy of aluminum (Al) and zinc (Zn), and an alloy of aluminum (Al) and nickel (Ni). Thin film metal deposition film for metal deposition film capacitors. delete The method of claim 1,
The thermally conductive layer and the thin film metal electrode layer are sequentially formed on the upper surface or the lower surface of the surface of the dielectric film in the same divided pattern, respectively.
The division pattern may include at least two segments formed on an upper surface or a lower surface of the surface of the dielectric film at intervals in the length direction and a width direction of the dielectric film, and an upper surface or a lower surface of the surface of the dielectric film. A thin film metal deposition film for a metal deposition film capacitor including two or more fuses formed on a surface and connecting the two or more segments. The method of claim 10,
Each of the two or more segments is formed by mixing one or two or more shapes of a square, a rhombus, and a triangle. The method of claim 10,
Two or more common segments each formed on an upper surface or a lower surface of the surface of the dielectric film spaced apart from each other in the longitudinal direction of the dielectric film; And
The upper or lower surface of the dielectric film is spaced apart from the common segment in the width direction of the dielectric film and spaced apart from each other in the longitudinal direction of the dielectric film and connected to the common segment by the two or more fuses. A thin film metal deposited film for a metal deposited film capacitor comprising two or more divided segments formed.

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