KR102040263B1 - Surface protecting adhesive film for semiconductor wafer - Google Patents

Surface protecting adhesive film for semiconductor wafer Download PDF

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KR102040263B1
KR102040263B1 KR1020160033462A KR20160033462A KR102040263B1 KR 102040263 B1 KR102040263 B1 KR 102040263B1 KR 1020160033462 A KR1020160033462 A KR 1020160033462A KR 20160033462 A KR20160033462 A KR 20160033462A KR 102040263 B1 KR102040263 B1 KR 102040263B1
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meth
acrylate
monomer
semiconductor wafer
alkyl
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KR1020160033462A
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Korean (ko)
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KR20170109390A (en
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김은영
김장순
김상환
박성찬
김원호
윤미선
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주식회사 엘지화학
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29Laminated material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08Homopolymers or copolymers of acrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/10Homopolymers or copolymers of methacrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04Homopolymers or copolymers of esters
    • C09J133/06Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/10Homopolymers or copolymers of methacrylic acid esters
    • C09J133/12Homopolymers or copolymers of methyl methacrylate
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)

Abstract

Including a base layer, an intermediate layer, and an adhesive layer,
The intermediate layer includes a C1-C14 alkyl group-containing first alkyl (meth) acrylate monomer, a C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, a first functional group-containing (meth) acrylic monomer and an alicyclic (meth) acrylate A photocured product of the composition for forming an interlayer comprising a first acrylic photocurable polymer of a first monomer component comprising a monomer, a photoinitiator, and a photocuring agent,
The storage modulus of the intermediate layer is 30,000 Pa to 50,000 Pa at 25 ° C.,
The glass transition temperature of the intermediate layer is -35 to -25 ℃,
The adhesive layer is a second monomer component comprising a C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer, a C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer and a second functional group-containing (meth) acrylic monomer Pressure-sensitive adhesive formed from a pressure-sensitive adhesive layer-forming composition containing a second acrylic photocurable resin, an isocyanate-based thermosetting agent and a photoinitiator,
The pressure-sensitive adhesive has a peeling force before light irradiation is greater than the peeling force after light irradiation,
The storage modulus of the adhesive layer is 90,000 Pa to 130,000 Pa at 25 ° C.,
The glass transition temperature of the adhesive layer is -40 to -30 ℃
Provided is an adhesive film for protecting a semiconductor wafer surface.

Description

Adhesive film for semiconductor wafer surface protection {SURFACE PROTECTING ADHESIVE FILM FOR SEMICONDUCTOR WAFER}

The present invention relates to an adhesive film which serves to protect the surface by attaching to the surface of the semiconductor wafer when it is necessary to protect the surface in processing the semiconductor wafer.

Recently, miniaturization and weight reduction of electronic products have been rapidly progressed, and accordingly, demands for leadlessness, thinning, and high integration of semiconductor packages are increasing. In response to this demand, the demand for large diameter and thinning of the wafer included in the semiconductor package is also increasing.

However, as the diameter increases, wafer damage such as wafer contamination and cracking occurs frequently during the backgrinding process. Accordingly, the role of the adhesive film for protecting the semiconductor wafer surface becomes more important.

The adhesive film for protecting the semiconductor wafer surface may have a multilayer structure, and generally includes a substrate layer serving as a basic support role. This base layer plays an important role in ensuring the stability of the film during the processing of the semiconductor wafer, and the adhesive film is structurally designed so that the adhesive film can be adhered flatly by an appropriate external force and, if necessary, can be peeled off without residue by an appropriate external force. It serves to give suitable rigidity and stretching performance.

One embodiment of the present invention provides a pressure-sensitive adhesive film for protecting the surface of the semiconductor wafer excellent in the step difference absorption ability, there is no residue during peeling.

In one embodiment of the invention,

Including a base layer, an intermediate layer, and an adhesive layer,

The intermediate layer includes a C1-C14 alkyl group-containing first alkyl (meth) acrylate monomer, a C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, a first functional group-containing (meth) acrylic monomer and an alicyclic (meth) acrylate A photocured product of the composition for forming an interlayer comprising a first acrylic photocurable polymer of a first monomer component comprising a monomer, a photoinitiator, and a photocuring agent,

The storage modulus of the intermediate layer is 30,000 Pa to 50,000 Pa at 25 ° C.,

The glass transition temperature of the intermediate layer is -35 to -25 ℃,

The adhesive layer is a second monomer component comprising a C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer, a C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer and a second functional group-containing (meth) acrylic monomer Pressure-sensitive adhesive formed from a pressure-sensitive adhesive layer-forming composition containing a second acrylic photocurable resin, an isocyanate-based thermosetting agent and a photoinitiator,

The pressure-sensitive adhesive has a peeling force before light irradiation is greater than the peeling force after light irradiation,

The storage modulus of the adhesive layer is 90,000 Pa to 130,000 Pa at 25 ° C.,

The glass transition temperature of the adhesive layer is -40 to -30 ℃

Provided is an adhesive film for protecting a semiconductor wafer surface.

The adhesive film for protecting the semiconductor wafer surface may have an excellent step absorption ability and may improve workability when peeling.

1 is a schematic cross-sectional view of an adhesive film for protecting a semiconductor wafer surface according to an embodiment of the present invention.
2 is a schematic cross-sectional view of applying an adhesive film for protecting a semiconductor wafer surface according to another embodiment of the present invention to a semiconductor wafer having bumps formed on one surface thereof.
3 is a schematic cross-sectional view of a semiconductor wafer formed with a predetermined thickness by grinding the back surface after applying the adhesive film for protecting the semiconductor wafer surface to a semiconductor wafer having bumps formed on one surface thereof.

Hereinafter, embodiments of the present invention will be described in detail. However, this is presented as an example, by which the present invention is not limited and the present invention is defined only by the scope of the claims to be described later.

In the drawings of the present specification, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

Hereinafter, any configuration is formed on the "top (or bottom)" of the substrate or "top (or bottom)" of the substrate means that any configuration is formed in contact with the top (or bottom) of the substrate. However, it is not limited to not including other configurations between the substrate and any configuration formed on (or under) the substrate.

In one embodiment of the invention:

Including a base layer, an intermediate layer, and an adhesive layer,

The intermediate layer includes a C1-C12 alkyl group-containing first alkyl (meth) acrylate monomer, a C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, a first functional group-containing (meth) acrylic monomer and an alicyclic (meth) acrylate A photocured product of the composition for forming an intermediate layer comprising a first acrylic photocurable polymer of a monomer component comprising a monomer, a photoinitiator and a photocuring agent,

The storage modulus of the intermediate layer is 30,000 Pa to 50,000 Pa at 25 ° C.,

The glass transition temperature of the intermediate layer is -35 to -25 ℃,

The adhesive layer is a second monomer component comprising a C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer, a C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer and a second functional group-containing (meth) acrylic monomer Pressure-sensitive adhesive formed from a pressure-sensitive adhesive layer-forming composition containing a second acrylic photocurable resin, an isocyanate-based thermosetting agent and a photoinitiator,

The pressure-sensitive adhesive has a peeling force before light irradiation is greater than the peeling force after light irradiation,

The storage modulus of the adhesive layer is 90,000 Pa to 130,000 Pa at 25 ° C.,

The glass transition temperature of the adhesive layer is -40 to -30 ℃

Provided is an adhesive film for protecting a semiconductor wafer surface.

1 is a schematic cross-sectional view of a pressure-sensitive adhesive film 100 for protecting a semiconductor wafer surface according to an embodiment of the present invention.

In FIG. 1, the adhesive film 100 for protecting the semiconductor wafer surface may include a base layer 10, an intermediate layer 20, and an adhesive layer 30. The adhesive film may have an excellent step absorption performance by having a structure including an intermediate layer 20 between the substrate layer 10 and the adhesive layer 30.

The adhesive film 100 for protecting the semiconductor wafer surface is a film for retaining or protecting a semiconductor wafer or a product in a process of precisely processing a semiconductor product such as a semiconductor wafer or an optical system product, and preventing surface protection or damage of the wafer or the like. Used for.

In one embodiment, the adhesive film 100 for protecting the semiconductor wafer surface is applied to a back grinding process (or, also referred to as a "backgrinding process") of a wafer having a bump formed on one surface thereof. The adhesive film 100 for protecting the semiconductor wafer surface exhibits excellent step absorbing ability with respect to the step difference of the bumps when applied to a wafer on which bumps such as a circuit are formed, and furthermore, residues during peeling of the adhesive film 100 for protecting the semiconductor wafer surface. Since it can provide excellent non-pollution performance by minimizing this, it is suitable for application to such a bump formed wafer.

In order to perform a back grinding process, a wafer having bumps such as electrodes and circuits formed on one surface thereof is first adhered to the adhesive film 100 for protecting the semiconductor wafer surface on one surface of which the bumps are formed, and then the back surface grinding process is performed to a predetermined thickness. A wafer having is prepared. If the surface step caused by the bump is large, stress may be concentrated on the bump part, and the wafer may be easily damaged. Therefore, the semiconductor wafer surface protection adhesive film 100 may be attached to one surface where the bump is formed, and then the back surface grinding process may be performed. Protect from breakage

The adhesive film 100 for protecting the semiconductor wafer surface has a three-layer structure of the base layer 10, the intermediate layer 20, and the adhesive layer 30, and thus is applied to the back surface grinding process of the wafer on which the bumps are formed. While exhibiting excellent step absorption ability at the same time, and at the same time, the interfacial adhesion between the intermediate layer 20 and the adhesive layer 30 is excellent, it may not generate a residue during peeling of the adhesive film 100 for protecting the semiconductor wafer surface. .

The base layer 10 is at least selected from the group consisting of polyethylene terephthalate film, polyolefin film, polyvinyl chloride film, polyurethane film, ethylene-vinyl acetate copolymer film, ethylene-alkyl acrylate copolymer film and combinations thereof It may include one.

Since the thickness of the base layer 10 affects the strength of the adhesive film 100 for protecting the semiconductor wafer surface, and also affects the prevention of wafer breakage during the back grinding process, the thickness of the wafer surface bumps and bumps may be increased. It is preferable to select an appropriate thickness depending on the presence or absence.

The substrate layer 10 may be manufactured by an extrusion process, a photocuring process, a casting process, a calendering process, a thermosetting process, and the like.

For example, an acrylic film can be obtained through ultraviolet curing, an ethylene-vinyl acetate copolymer film can be produced by an extrusion process, and a polyurethane film can be produced by a thermosetting process, and furthermore, a polyvinyl chloride film Silver may be formed by a casting process or a calendering process.

The base layer 10 may have a thickness of about 50 μm to about 200 μm. Although the thickness of the base layer 10 is not limited, it is advantageous in that it is advantageous in the manufacturing process of the adhesive film 100 for protecting the semiconductor wafer surface and prevents unnecessary step increase by maintaining the thickness in the above range.

The intermediate layer 20 may be formed by preparing a composition for forming an intermediate layer including a first acrylic photocurable polymer obtained by polymerizing a first monomer component, and then photocuring the intermediate layer forming composition.

Specifically, the first monomer component includes a C1-C12 alkyl group-containing first alkyl (meth) acrylate monomer, a C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, a first functional group-containing (meth) acrylic monomer, and It may include an alicyclic (meth) acrylate monomer.

For example, first, the first monomer component is thermally polymerized to obtain a first acrylic photocurable polymer. The obtained first acrylic photocurable polymer may be in the form of oligomers and / or prepolymers according to the degree of polymerization, and unreacted monomers may be mixed together and included in the composition for forming the intermediate layer.

The C1-C14 alkyl group-containing first alkyl (meth) acrylate monomer is, for example, linear or branched C1-C14 alkyl group-containing alkyl (meth) acrylate, specifically, branched C5-C10 alkyl group-containing alkyl (meth) ) Acrylate.

The said 1st alkyl (meth) acrylate monomer is methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl, for example. (Meth) acrylate, t-butyl (meth) acrylate, sec-butyl (meth) acrylate, pentyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2-ethylbutyl (meth) acrylate , n-octyl (meth) acrylate, isooctyl (meth) acrylate, isononyl (meth) acrylate, lauryl (meth) acrylate, tetradecyl (meth) acrylate and combinations thereof It may include at least one selected.

The C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer is, for example, linear or branched C15-C25 alkyl group-containing alkyl (meth) acrylate, specifically, linear C15-C20 alkyl group-containing alkyl (meth) It may be an acrylate.

The C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer may be, for example, isostearyl acrylate.

The functional group-containing first (meth) acrylic monomer may include one selected from the group consisting of a hydroxy group-containing (meth) acrylic monomer, a carboxyl group-containing (meth) acrylic monomer, a nitrogen-containing (meth) acrylic monomer, and a combination thereof.

As for the said functional group containing 1st (meth) acrylic-type monomer, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6 -Hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 2-hydroxyethylene glycol (meth) acrylate, 2-hydroxypropylene glycol (meth) acrylate, acrylic acid, methacrylic acid , 2- (meth) acryloyloxy acetic acid, 3- (meth) acryloyloxy propyl acid, 4- (meth) acryloyloxy butyl acid, acrylic acid duplex, itaconic acid, maleic acid, 2-isocy Anatoethyl (meth) acrylate, 3-isocyanatopropyl (meth) acrylate, 4-isocyanatobutyl (meth) acrylate, (meth) acrylamide, N-vinyl pyrrolidone, N- Vinyl caprolactam and one selected from the group consisting of Can.

The alicyclic (meth) acrylate monomer may be a (meth) acrylate containing a C3-C15 alicyclic group.

In one embodiment, the alicyclic (meth) acrylate monomer may be an alicyclic condensed ring-containing acrylate.

The alicyclic (meth) acrylate monomer is, for example, at least one selected from the group consisting of cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate and combinations thereof It may include.

In one embodiment, the first monomer component is 10 to 85% by weight of the first alkyl (meth) acrylate monomer, 1 to 30% by weight of the C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, first 5 to 25% by weight of the functional group-containing (meth) acrylic monomer and 9 to 35% by weight of the alicyclic (meth) acrylate monomer.

On the other hand, the glass transition temperature increased by the alicyclic (meth) acrylate monomer or the structural unit resulting therefrom is improved by including the alicyclic (meth) acrylate monomer or the structural unit resulting therefrom. To the unwanted level, including the C1-C14 alkyl group-containing first alkyl (meth) acrylate monomers and the C15-C25 alkyl group-containing second alkyl (meth) acrylate monomers or structural units derived therefrom The storage modulus can be controlled by lowering the glass transition temperature. Therefore, the intermediate layer 20 includes the alicyclic (meth) acrylate monomer or the structural unit resulting therefrom together with the alkyl (meth) acrylate monomer or the structural unit derived therefrom to provide excellent adhesion and a desired level of storage modulus. Implement at the same time.

The C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer contributes to improving interfacial adhesion, and has a relatively low glass transition temperature, thereby providing softness.

The storage modulus is a value corresponding to the initial slope of the tensile curve in the tensile test, the intermediate layer 20 having a storage modulus of the numerical range is excellent in the step absorption capacity.

The storage modulus can be measured using a rheometer.

The glass transition temperature (Tg) can be measured using calorimetry (DSC, differential scanning calorimetry).

By forming the intermediate layer 20 with a photocurable product of the first acrylic photocurable polymer obtained by polymerizing the first monomer component blended in the above content range, the intermediate layer 20 is stored at 25 ° C. of 30,000 Pa to 50,000 Pa. Elastic modulus and glass transition temperature of -35 to -25 ℃ can be achieved.

The degree of polymerization of the first acrylic photocurable polymer may be appropriately selected according to the physical properties of the intermediate layer 20 to be obtained. Specifically, the weight average molecular weight of the first acrylic photocurable polymer is about 500,000 to about 5,000,000 g / mol Can be.

The photoinitiator may include, for example, one selected from the group consisting of a benzoin initiator, a hydroxy ketone initiator, an amino ketone initiator, a caprolactam initiator, and a combination thereof.

Commercially available Irgacure # 184 (hydroxycyclohexyl phenylketone) from Ciba Geigy, Irgacure # 907 (2-methyl-1 [4] as a photoinitiator. -(Methylthio) phenyl] -2-morpholino-propan-1-one (2-methyl-1 [4- (methythio) phenyl] -2-morpholino-propan-1-on), Irgacure ) # 500 (hydroxy-ketones and benzo phoenone), Irgacure # 651 (benzildimethyl-ketone), Darocure # 1173 (2-hydroxy 2-hydroxy-2-methyl-1-phenyl-propan-1-one), Darocure # 116, CGI # 1800 (bisacylphosph) Bisacylphosphineoxide) or CGI # 1700 (bisacylphosphine oxide and hydroxy ketone) may be used.

The content of the photoinitiator may be 0.001 to 0.5 parts by weight based on 100 parts by weight of the first acrylic photocurable polymer. By using the photoinitiator in the content ratio of the above range, by forming the intermediate layer 20 it is possible to enable the intermediate layer 20 to implement the 25 ℃ storage modulus and glass transition temperature of the above-described range.

The photocuring agent may adjust the adhesive properties of the pressure-sensitive adhesive composition according to the amount of use, and in some cases may serve to give a crosslinked structure. The photocuring agent may be, for example, a polar monomer such as polyfunctional acrylate, and specifically, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neo Pentyl glycol di (meth) acrylate, 1,2-ethylene glycol di (meth) acrylate, polyethylene glycol di (meth) acrylate, 1,12-dodecanediol di (meth) acrylate, neopentyl glycol adipate Di (meth) acrylate, hydroxypivalic acid neopentylglycol di (meth) acrylate, dicyclopentanyl di (meth) acrylate, caprolactone modified dicyclopentenyl di (meth) acrylate, ethylene oxide modified di (Meth) acrylate, di (meth) acryloxy ethyl isocyanurate, allylated cyclohexyl di (meth) acrylate, tricyclodecanedimethanol (meth) acrylate, dimethylol dicyclopentane di (meth) arc Ethylene oxide modified hexahydrophthalic acid di (meth) acrylate, tricyclodecane dimethanol (meth) acrylate, neopentylglycol modified trimethylpropane di (meth) acrylate, adamantane di (meth) acrylate, 9,9-bis [4- (2-acryloyloxyethoxy) phenyl] fluorene, trimethylolpropane tri (meth) acrylate, dipentaerythritol tri (meth) acrylate, propionic acid modified dipenta Risthritol tri (meth) acrylate, pentaerythritol tri (meth) acrylate, propylene oxide modified trimethylolpropane tri (meth) acrylate, tris (meth) acryloxyethyl isocyanurate, diglycerine tetra ( Meta) acrylate, pentaerythritol tetra (meth) acrylate, propionic acid-modified dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylic One selected from the group consisting of latex, caprolactone modified dipentaerythritol hexa (meth) acrylate and urethane (meth) acrylate, which is a reactant of an isocyanate monomer with trimethylolpropane tri (meth) acrylate, and combinations thereof can do.

The content of the photocuring agent may be 0.001 to 0.5 parts by weight based on 100 parts by weight of the first acrylic photocurable polymer. By using the photocuring agent in the content ratio of the above range, by forming the intermediate layer 20 to help the film formation well without causing changes over time, to achieve the storage modulus of 25 ℃ of the above-described range of the intermediate layer 20 Helps to improve step absorbability and lowers changes over time.

The intermediate layer 20 may have a thickness of about 50 μm to about 200 μm. The thickness of the intermediate layer 20 can be appropriately selected within the range of not impairing the height of the unevenness of the wafer surface, the retention of the wafer, the protection of the wafer, and the like, and by maintaining the thickness in the above range, the back surface grinding of the wafer When the wafer is cracked or dimples are prevented from being generated on the back surface and applied to the wafer on which the bumps are formed, it is possible to exhibit excellent step absorbing ability, and to form the adhesive layer 30 on the intermediate layer 20. Even if it is, work efficiency can be improved.

In order to manufacture the intermediate layer 20, first, the first acrylic photocurable polymer may be prepared by thermally polymerizing a mixture of the first monomer components. Thermal polymerization of the first monomer component may be partially polymerized to form an acrylic syrup, and an additive may be mixed with the acrylic syrup to prepare a composition for forming an intermediate layer.

The acrylic syrup formed by partial polymerization of the first monomer component may have a solid content of about 4% to about 40%. Solids may refer to the concentration of the polymer. The acrylic syrup can maintain the stability of the acrylic photocurable polymer obtained by adjusting the degree of polymerization of the solid content concentration to the above range level, and can secure a range of storage modulus with easy step absorption.

Additives added to the composition for forming the intermediate layer, as needed, additives commonly used, such as anti-aging agents, fillers, pigments, colorants, flame retardants, antistatic agents, ultraviolet absorbers and the like function of the adhesive film for protecting the semiconductor wafer surface It can add in the range which does not inhibit. These additives may be used in conventional amounts depending on the kind thereof.

After applying the composition for forming the intermediate layer on the base layer 10, the intermediate layer 20 can be formed by photocuring by irradiating ionizing radiation, radiation such as ultraviolet rays, visible light, etc. according to the type of photopolymerization initiator. have. The kind of radiation etc. and the kind of lamp used for irradiation can be selected suitably, The low pressure lamps, such as a fluorescent chemical lamp, a black light, a germicidal lamp, and the high pressure lamps, such as a metal halide lamp and a high pressure mercury lamp, can be used. .

Specifically, the intermediate layer 20 may be formed by curing with a black light UV lamp that emits UV light, for example, the black light UV lamp may be about 5W, the main wavelength is about 365nm. By using the black light UV lamp, the heat generation problem in partial polymerization and the like during the formation of the intermediate layer 20 can be improved, and the black light can be cured without any difference in the surface and the inside of the intermediate layer forming a predetermined thickness. It is advantageous to use UV lamps.

The pressure-sensitive adhesive layer 30 is formed on the intermediate layer 20 of the pressure-sensitive adhesive film 100 for protecting the semiconductor wafer surface, and formed from a pressure-sensitive adhesive layer-forming composition containing a second acrylic photocurable resin and an isocyanate-based thermosetting agent. It may be made of a pressure-sensitive adhesive. For example, first, after preparing the composition for forming the pressure-sensitive adhesive layer, it is applied to the upper portion of the intermediate layer 20, and thermally cured to form a film, the substrate layer 10, the intermediate layer 20 and the adhesive layer 30 are continuous The adhesive film 100 for protecting the semiconductor wafer surface may be manufactured.

The adhesive layer 30 has an appropriate adhesive force when processing a product such as a semiconductor wafer, and is firmly attached to the semiconductor wafer during the process. After the processing, the adhesive layer 30 should be able to be easily peeled off without applying a load to the product. For example, the pressure-sensitive adhesive layer 30 is formed on the intermediate layer 20 by thermosetting the composition for forming the pressure-sensitive adhesive layer 30 in addition to the photo-curable acrylic resin and containing a predetermined amount of a thermosetting agent and a photoinitiator. After the adhesive film 100 for protecting the surface of the semiconductor wafer is manufactured and the back surface grinding process is completed, the adhesive layer 30 may be further photocured by additional light irradiation to be peeled off from the wafer. The adhesive layer 30 is easily peeled off by additional photocuring because the peeling force before light irradiation has a large peeling force after light irradiation.

The pressure-sensitive adhesive layer 30 is formed by further applying a pressure-sensitive adhesive containing a second photocurable acrylic resin, directly applying the solvent or the like on the intermediate layer 20, or forming the second photocurable acrylic resin. The pressure-sensitive adhesive included may be applied onto a release film to form the pressure-sensitive adhesive layer 30 in advance, and then the pressure-sensitive adhesive layer 30 may be bonded to the intermediate layer 20 to form the pressure-sensitive adhesive.

The second acrylic photocurable resin is obtained by thermal polymerization of the second monomer component. The obtained second acrylic photocurable polymer may be in the form of oligomers and / or prepolymers according to the degree of polymerization, and unreacted monomers may be mixed together and included in the composition for forming the pressure-sensitive adhesive layer.

The C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer may be, for example, linear or branched C1-C4 alkyl group-containing alkyl (meth) acrylate.

The C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer is, for example, methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acryl At least one selected from the group consisting of latex, n-butyl (meth) acrylate, t-butyl (meth) acrylate, sec-butyl (meth) acrylate, and combinations thereof.

The C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer may be, for example, a branched C5-C10 alkyl group-containing alkyl (meth) acrylate.

The C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer is, for example, pentyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2-ethylbutyl (meth) acrylate, n- At least one selected from the group comprising octyl (meth) acrylate, isooctyl (meth) acrylate, isononyl (meth) acrylate, lauryl (meth) acrylate, tetradecyl (meth) acrylate, and combinations thereof It may include.

The functional group-containing second (meth) acrylic monomer may include one selected from the group consisting of a hydroxy group-containing (meth) acrylic monomer, a carboxyl group-containing (meth) acrylic monomer, a nitrogen-containing (meth) acrylic monomer, and a combination thereof.

The functional group-containing second (meth) acrylic monomer is, for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6 -Hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 2-hydroxyethylene glycol (meth) acrylate, 2-hydroxypropylene glycol (meth) acrylate, acrylic acid, methacrylic acid , 2- (meth) acryloyloxy acetic acid, 3- (meth) acryloyloxy propyl acid, 4- (meth) acryloyloxy butyl acid, acrylic acid duplex, itaconic acid, maleic acid, 2-isocy Anatoethyl (meth) acrylate, 3-isocyanatopropyl (meth) acrylate, 4-isocyanatobutyl (meth) acrylate, (meth) acrylamide, N-vinyl pyrrolidone, N- Vinyl caprolactam and one selected from the group consisting of Can.

In one embodiment, the second monomer component is 5 to 20% by weight of the C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer, and 55 to 85 weight by weight of the C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer. % And 10 to 25% by weight of the second functional group-containing (meth) acrylic monomer.

The pressure-sensitive adhesive forming composition may be implemented by mixing the second acrylic photocurable resin such that the storage modulus is 90,000 Pa to 130,000 Pa at 25 ° C., and the glass transition temperature is −40 to −30 ° C. Specifically, the C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomers have a relatively low glass transition temperature, but the C1-C4 alkyl group-containing third alkyl (meth) acrylate monomers may be mixed to implement the above range, The second functional group-containing (meth) acrylic monomer may be blended together in the above range to form an adhesive layer 30 having an appropriate cohesive force, and the adhesive film 100 for protecting the semiconductor wafer surface used in the semiconductor wafer back surface grinding step. It contributes to improving the interfacial adhesion force when applied, and gives softness because it has relatively low glass transition temperature.

The degree of polymerization of the second acrylic photocurable polymer may be appropriately selected according to the physical properties of the adhesive layer 30 to be obtained. Specifically, the weight average molecular weight of the second acrylic photocurable polymer is about 500,000 to about 4,000,000 g / mol Can be. The second acrylic photocurable polymer having a weight average molecular weight in the above range can be made to have a suitable solid content of the composition for forming the pressure-sensitive adhesive layer, it can be excellent in coating properties.

The isocyanate-based thermosetting agent is selected from the group consisting of tolylene diisocyanate, xylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isoform diisocyanate, tetramethylxylene diisocyanate and naphthalene diisocyanate, for example. It may comprise at least one or more.

The content of the thermosetting agent may be 0.1 to 10 parts by weight, specifically, 0.5 to 5 parts by weight, and more specifically 1 to 2 parts by weight, based on 100 parts by weight of the second acrylic photocurable polymer. By using the thermosetting agent in the content ratio of the above range, by forming the pressure-sensitive adhesive layer 30, the pressure-sensitive adhesive layer 30 can realize a 25 ℃ storage modulus and glass transition temperature of the above-described range.

The photoinitiator included in the adhesive layer-forming composition is the same as the photoinitiator included in the composition for forming the intermediate layer.

The adhesive layer 30 may have a thickness of about 10 μm to about 40 μm. The thickness of the adhesive layer 30 may be appropriately set in a range that does not impair the retention or protection of the wafer, but by maintaining the thickness in the above range, the breakdown of the adhesive layer 30 does not affect the intermediate layer 20. When the adhesive film 100 for protecting the semiconductor wafer surface is applied to the wafer, the adhesion and peeling may be facilitated.

2 is a schematic cross-sectional view of applying the semiconductor wafer surface protection adhesive film 100 to the semiconductor wafer 50 having the bumps 40 formed on one surface thereof. In FIG. 2, in the adhesive film 100 for protecting the semiconductor wafer surface, the adhesive layer 30 is attached in a direction contacting one surface on which the bump 40 of the semiconductor wafer 50 is formed, that is, in an arrow direction.

3 is a schematic cross-sectional view of the semiconductor wafer 50 having the predetermined thickness by grinding the back surface after applying the adhesive film 100 for protecting the semiconductor wafer surface to the semiconductor wafer 50 having the bump 40 formed on one surface thereof. . In FIG. 3, the portion indicated by the dotted line is cut off in the back grinding process.

In the semiconductor wafer surface protection adhesive film 100, the semiconductor wafer 50 may be damaged by circuit patterns or the like present on the surface of the semiconductor wafer 50, or may be contaminated by foreign substances or chemicals generated during the process. It prevents it from becoming. The semiconductor wafer surface protection adhesive film 100 should be removed after the precise processing of the semiconductor wafer has been completed, and the semiconductor wafer surface protection adhesive film 100 should not damage the surface of the semiconductor wafer 50 during the back grinding process. It can be protected and can be removed without peeling residue after the backside grinding process.

As described above, the adhesive film 100 for protecting the surface of the semiconductor wafer may be usefully applied to the back surface grinding process of the semiconductor wafer 50 on which the bumps 40 are formed due to excellent step absorbing ability.

In one embodiment, the bump 40 has a height of about 50 μm to about 200 μm to apply a back surface grinding process by applying the adhesive film 100 for protecting the semiconductor wafer surface, thereby performing a semiconductor wafer ( 50) can be effectively protected.

Hereinafter, examples and comparative examples of the present invention are described. Such following examples are only examples of the present invention, and the present invention is not limited to the following examples.

( EXAMPLE )

Production Example  One

Heat was added to the first monomer component obtained by mixing 50 parts by weight of ethylhexyl acrylate, 15 parts by weight of isobornyl acrylate, 15 parts by weight of 2-hydroxyethyl acrylate and 20 parts by weight of isostearyl acrylate as a composition for forming an intermediate layer. A first acrylic photocurable polymer (a weight average molecular weight of 3 million and a syrup solution having a glass transition temperature of −35 ° C.) was prepared by partial polymerization. Then, 100 parts by weight of the first acrylic photocurable polymer was irradiated with Irgacure 651 as a photoinitiator. 0.3 parts by weight of a urethane acrylate curing agent was added as parts by weight and a photocuring agent to prepare a composition for forming an intermediate layer.

Production Example  2

A first acrylic sight obtained by partial polymerization by applying heat to a first monomer component obtained by mixing 50 parts by weight of ethylhexyl acrylate, 30 parts by weight of isobornyl acrylate and 20 parts by weight of 2-hydroxyethyl acrylate as a composition for forming an intermediate layer. A syrup solution of a chemical polymer (weight average molecular weight 970,000, glass transition temperature -25 ° C) was prepared. Subsequently, 0.3 parts by weight of Irgacure 651 as a photoinitiator and 0.3 parts by weight of a urethane acrylate curing agent as a photocuring agent were added to 100 parts by weight of the first acrylic photocurable polymer to prepare a composition for forming an intermediate layer.

Production Example  3

A second acrylic sight obtained by partial polymerization by applying heat to a second monomer component obtained by mixing 54 parts by weight of ethylhexyl acrylate, 23 parts by weight of 2-hydroxyethyl acrylate and 23 parts by weight of methyl acrylate as a composition for forming an adhesive layer. A syrup solution of a chemical polymer (weight average molecular weight 970,000, glass transition temperature -35 ° C) was prepared. Subsequently, 10 parts by weight of Irgacure 651 as a photoinitiator and 1.5 parts by weight of a 6-functional NCO curing agent as a thermosetting agent were added to 100 parts by weight of the second acrylic photocurable polymer to prepare a composition for forming an adhesive layer.

Production Example  4

A pressure-sensitive adhesive layer-forming composition was prepared in the same manner as in Preparation Example 3, except that 3 parts by weight of a 6-functional NCO curing agent was added as the thermosetting agent in Preparation Example 3.

Production Example  5

A pressure-sensitive adhesive layer-forming composition was prepared in the same manner as in Preparation Example 3, except that 5 parts by weight of a 6-functional NCO curing agent was added as the thermosetting agent in Preparation Example 3.

EXAMPLE  One

A 120 μm-thick polyethylene (PE) film was prepared as a substrate layer, and the composition for forming an intermediate layer prepared in Preparation Example 1 was applied on the substrate layer.

After coating the composition for forming the intermediate layer of Preparation Example 1 between the release PET film and cured by a black light UV lamp of 5W, the dominant wavelength is 365nm to form an intermediate layer having a thickness of 100㎛, transferred to the base layer, Substrate-interlayer plywood.

Subsequently, after coating the composition for pressure-sensitive adhesive layer prepared in Preparation Example 3 to a release film and left in an oven at 90 ° C. for 3 minutes to form a film to form a pressure-sensitive adhesive layer having a thickness of 10 ㎛, the substrate by laminating with the intermediate layer An adhesive film for protecting a semiconductor wafer surface including a layer, an intermediate layer, and an adhesive layer was prepared.

Comparative example  One

A 120 μm-thick polyethylene (PE) film was prepared as a substrate layer, and the composition for forming an intermediate layer prepared in Preparation Example 1 was applied on the substrate layer.

After coating the composition for forming the intermediate layer of Preparation Example 1 between the release PET film and cured by a black light UV lamp of 5W, the dominant wavelength is 365nm to form an intermediate layer having a thickness of 100㎛, transferred to the base layer, Substrate-interlayer plywood.

Subsequently, the composition for adhesion layer formation prepared in Preparation Example 4 was coated on a release film, and then left in an oven at 90 ° C. for 3 minutes to form a film to form an adhesion layer having a thickness of 10 μm, and then laminated with the intermediate layer. An adhesive film for protecting a semiconductor wafer surface including a layer, an intermediate layer, and an adhesive layer was prepared.

Comparative example  2

A 120 μm-thick polyethylene (PE) film was prepared as a substrate layer, and the composition for forming an intermediate layer prepared in Preparation Example 1 was applied on the substrate layer.

The intermediate layer forming composition was coated between a release PET film and then cured by a black light UV lamp having a wavelength of 5 nm and a dominant wavelength of 365 nm to form an intermediate layer having a thickness of 100 μm, which was transferred to the substrate layer, and the substrate-middle layer plywood. It was.

Subsequently, after coating the composition for pressure-sensitive adhesive layer formed in Preparation Example 5 on a release film and left in an oven at 90 ° C. for 3 minutes to form a film to form a pressure-sensitive adhesive layer having a thickness of 10 μm, the substrate by laminating with the intermediate layer An adhesive film for protecting a semiconductor wafer surface including a layer, an intermediate layer, and an adhesive layer was prepared.

Comparative example  3

A 120 μm-thick polyethylene (PE) film was prepared as a substrate layer, and the composition for forming an intermediate layer prepared in Preparation Example 2 was applied on the substrate layer.

The intermediate layer forming composition was coated between a release PET film and then cured by a black light UV lamp having a wavelength of 5 nm and a dominant wavelength of 365 nm to form an intermediate layer having a thickness of 100 μm, which was transferred to the substrate layer, and the substrate-middle layer plywood. It was.

Subsequently, after coating the composition for pressure-sensitive adhesive layer prepared in Preparation Example 3 to a release film and left in an oven at 90 ° C. for 3 minutes to form a film to form a pressure-sensitive adhesive layer having a thickness of 10 ㎛, the substrate by laminating with the intermediate layer An adhesive film for protecting a semiconductor wafer surface including a layer, an intermediate layer, and an adhesive layer was prepared.

Comparative example  4

A 120 μm-thick polyethylene (PE) film was prepared as a substrate layer, and the composition for forming an intermediate layer prepared in Preparation Example 2 was applied on the substrate layer.

The intermediate layer forming composition was coated between a release PET film and then cured by a black light UV lamp having a wavelength of 5 nm and a dominant wavelength of 365 nm to form an intermediate layer having a thickness of 100 μm, which was transferred to the substrate layer, and the substrate-middle layer plywood. It was.

Subsequently, the composition for adhesion layer formation prepared in Preparation Example 4 was coated on a release film, and then left in an oven at 90 ° C. for 3 minutes to form a film to form an adhesion layer having a thickness of 10 μm, and then laminated with the intermediate layer. An adhesive film for protecting a semiconductor wafer surface including a layer, an intermediate layer, and an adhesive layer was prepared.

Comparative example  5

A 120 μm-thick polyethylene (PE) film was prepared as a substrate layer, and the composition for forming an intermediate layer prepared in Preparation Example 2 was applied on the substrate layer.

The intermediate layer forming composition was coated between a release PET film and then cured by a black light UV lamp having a wavelength of 5 nm and a dominant wavelength of 365 nm to form an intermediate layer having a thickness of 100 μm, which was transferred to the substrate layer, and the substrate-middle layer plywood. It was.

Subsequently, after coating the composition for pressure-sensitive adhesive layer formed in Preparation Example 5 on a release film and left in an oven at 90 ° C. for 3 minutes to form a film to form a pressure-sensitive adhesive layer having a thickness of 10 μm, the substrate by laminating with the intermediate layer An adhesive film for protecting a semiconductor wafer surface including a layer, an intermediate layer, and an adhesive layer was prepared.

<Measurement of physical properties>

The glass transition temperatures for the intermediate and adhesive layers prepared in Example 1 and Comparative Examples 1-5 were measured by DSC (mettler toledo, TGA / DSC 1), and the results are shown in Table 1 below.

The 25 ° C., 45 ° C. and 60 ° C. storage modulus of the intermediate and adhesive layers prepared in Example 1 and Comparative Examples 1-5 were measured by rheometer (TA instruments, ARES-G2), and the results are shown in Table 2 below. It is described in.

division Glass transition temperature (℃) Example 1 / Comparative Example 1-2 Mezzanine -31 Comparative Example 3-5 Mezzanine -20 Example 1 / Comparative Example 3 Adhesive layer -30 Comparative Examples 1 and 4 Adhesive layer -26 Comparative Examples 2 and 5 Adhesive layer -23

division 25 ℃ storage modulus 40 ℃ storage modulus 60 ℃ storage modulus Floor type Measurement result (Pa) Floor type Measurement result (Pa) Floor type Measurement result (Pa) Preparation Example 1 Mezzanine 42,449 Mezzanine 31,583 Mezzanine 22,217 Preparation Example 2 Mezzanine 90,154 Mezzanine 69,689 Mezzanine 59,297 Preparation Example 3 Adhesive layer 116,003 Adhesive layer 120,011 Adhesive layer 131,794 Preparation Example 4 Adhesive layer 222,809 Adhesive layer 241,943 Adhesive layer 269,606 Preparation Example 5 Adhesive layer 292,755 Adhesive layer 313,308 Adhesive layer 347,306

Experimental Example  One: Step Absorption  evaluation

Each of the adhesive films for protecting the semiconductor wafer surface of Example 1 and Comparative Example 1-5 were allowed to adhere the adhesive layer on the patterned wafer with a bump height of 50 μm and a width of 50 μm, and the pressure: 0.3 MPa, a speed of 10 mm / min conditions were attached.

Bubble area was calculated by observing bubbles around the bumps under a microscope.

The results observed according to the following evaluation criteria are shown in Table 3 below.

<Evaluation Criteria>

◎: step difference absorption 90% or more (bubble area 10% or less)

○: step difference absorption less than 70 ~ 90% (bubble area more than 10% ~ 30% or less)

△: step difference absorption less than 50 to 70% (bubble area is more than 30% ~ 50% or less)

X: step difference absorption less than 50% (bubble area is more than 50%)

25 40 ℃ 60 ℃ Example 1 Example 2 × Example 3 × Comparative Example 1 Comparative Example 2 × × × Comparative Example 3 × × ×

In Table 3, Example 1 was excellent in all the step absorption capacity of 25 ℃, 40 ℃ and 60 ℃, Comparative Example 1-5 it was confirmed that the step absorption capacity compared to Example 1 at all temperatures.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

10: base material layer
20: middle layer
30: adhesive layer
40: bump
50: semiconductor wafer
100: adhesive film for semiconductor wafer surface protection

Claims (17)

Including a base layer, an intermediate layer, and an adhesive layer,
The intermediate layer includes a C1-C14 alkyl group-containing first alkyl (meth) acrylate monomer, a C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, a first functional group-containing (meth) acrylic monomer and an alicyclic (meth) acrylate A photocured product of the composition for forming an interlayer comprising a first acrylic photocurable polymer of a first monomer component comprising a monomer, a photoinitiator, and a photocuring agent,
The storage modulus of the intermediate layer is 30,000 Pa to 50,000 Pa at 25 ° C.,
The glass transition temperature of the intermediate layer is -35 to -25 ℃,
The adhesive layer is a second monomer component comprising a C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer, a C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer and a second functional group-containing (meth) acrylic monomer Pressure-sensitive adhesive formed from a pressure-sensitive adhesive layer-forming composition containing a second acrylic photocurable resin, an isocyanate-based thermosetting agent and a photoinitiator,
The pressure-sensitive adhesive has a peeling force before light irradiation is greater than the peeling force after light irradiation,
The storage modulus of the adhesive layer is 90,000 Pa to 130,000 Pa at 25 ° C.,
The glass transition temperature of the adhesive layer is -40 to -30 ℃
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The first monomer component is the first monomer component is 10 to 85% by weight of the first alkyl (meth) acrylate monomer, 1 to 30% by weight of the C15-C25 alkyl group-containing second alkyl (meth) acrylate monomer, 5 to 25% by weight of a monofunctional group-containing (meth) acrylic monomer and 9 to 35% by weight of the alicyclic (meth) acrylate monomer
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The functional group-containing first (meth) acrylic monomer includes one selected from the group consisting of a hydroxy group-containing (meth) acrylic monomer, a carboxyl group-containing (meth) acrylic monomer, a nitrogen-containing (meth) acrylic monomer, and a combination thereof.
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The weight average molecular weight of the first acrylic photocurable polymer is 500,000 to 5,000,000 g / mol
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The photoinitiator includes one selected from the group consisting of a benzoin initiator, a hydroxy ketone initiator, an amino ketone initiator, a caprolactam initiator, and a combination thereof, and the content of the photoinitiator is 100 wt% of the first acrylic photocurable polymer. 0.001 to 0.5 parts by weight
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The photocuring agent is 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, neopentylglycol di (meth) acrylate, 1,2-ethylene glycol di (meth) acrylic Latene, polyethylene glycol di (meth) acrylate, 1,12-dodecanediol di (meth) acrylate, neopentylglycol adipate di (meth) acrylate, hydroxypivalate neopentylglycol di (meth) acrylate , Dicyclopentanyl di (meth) acrylate, caprolactone modified dicyclopentenyl di (meth) acrylate, ethylene oxide modified di (meth) acrylate, di (meth) acryloxy ethyl isocyanurate, allylated Cyclohexyl di (meth) acrylate, tricyclodecanedimethanol (meth) acrylate, dimethylol dicyclopentane di (meth) acrylate, ethylene oxide modified hexahydrophthalic acid di (meth) acrylate, trisicle Rodecane dimethanol (meth) acrylate, neopentyl glycol modified trimethylpropane di (meth) acrylate, adamantane di (meth) acrylate, 9,9-bis [4- (2-acryloyloxyethoxy ) Phenyl] fluorene, trimethylolpropane tri (meth) acrylate, dipentaerythritol tri (meth) acrylate, propionic acid-modified dipentaerythritol tri (meth) acrylate, pentaerythritol tri (meth) Acrylate, propylene oxide modified trimethylolpropane tri (meth) acrylate, tris (meth) acryloxyethyl isocyanurate, diglycerin tetra (meth) acrylate, pentaerythritol tetra (meth) acrylate, propionic acid Modified dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, caprolactone modified dipentaerythritol hexa (meth) acrylate and isosi Urethane (meth) acrylate, which is a reactant of a nate monomer and trimethylolpropane tri (meth) acrylate, and a combination thereof, and the content of the photocuring agent is 100% by weight of the first acrylic photocurable polymer. 0.001 to 0.5 parts by weight
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The second monomer component is 5 to 20 wt% of the C1-C4 alkyl group-containing third alkyl (meth) acrylate monomer, 55 to 85 wt% of the C5-C14 alkyl group-containing fourth alkyl (meth) acrylate monomer, and the second 10 to 20% by weight of functional group-containing (meth) acrylic monomer
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The functional group-containing second (meth) acrylic monomer includes one selected from the group consisting of a hydroxy group-containing (meth) acrylic monomer, a carboxyl group-containing (meth) acrylic monomer, a nitrogen-containing (meth) acrylic monomer, and a combination thereof.
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The weight average molecular weight of the second acrylic photocurable polymer is 500,000 to 4,000,000 g / mol
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The isocyanate-based thermosetting agent includes at least one selected from the group consisting of tolylene diisocyanate, xylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isoform diisocyanate, tetramethylxylene diisocyanate and naphthalene diisocyanate.
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The content of the thermosetting agent is 0.1 to 10 parts by weight relative to 100 parts by weight of the second acrylic photocurable polymer.
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The base layer includes at least one selected from the group consisting of polyethylene terephthalate film, polyolefin film, polyvinyl chloride film, polyurethane film, ethylene-vinyl acetate copolymer film, ethylene-alkyl acrylate copolymer film, and combinations thereof doing
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The base layer has a thickness of 50 μm to 200 μm
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The thickness of the intermediate layer is 50㎛ to 200㎛
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
The adhesive layer has a thickness of 10 μm to 40 μm
Adhesive film for semiconductor wafer surface protection.
The method of claim 1,
It is applied to the back surface grinding process of the wafer on which bumps are formed on one surface, and the adhesive layer is attached to one surface of the wafer on which bumps are formed.
Adhesive film for semiconductor wafer surface protection.
The method of claim 16,
The bump has a height of 50 μm to 200 μm
Adhesive film for semiconductor wafer surface protection.
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KR101983743B1 (en) * 2017-10-27 2019-05-29 동우 화인켐 주식회사 Adhesive layer, optical member and display device using the same
KR102203869B1 (en) * 2018-03-28 2021-01-18 주식회사 엘지화학 Adhesieve sheet for temporary-attamchment and methode for producing semiconductor device using the same
KR102203870B1 (en) * 2018-04-12 2021-01-18 주식회사 엘지화학 Adhesieve sheet for temporary-attamchment and methode for producing semiconductor device using the same
WO2019199085A1 (en) * 2018-04-12 2019-10-17 주식회사 엘지화학 Adhesive sheet for temporary attachment and semiconductor device producing method using same
KR102239210B1 (en) * 2018-06-04 2021-04-09 주식회사 엘지화학 Back grinding tape
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KR102654342B1 (en) * 2019-09-19 2024-04-02 주식회사 엘지화학 Adhesieve composition and adhesieve sheet for temporary-attachment using the same
KR102411362B1 (en) * 2021-07-09 2022-06-22 구동필 Adhesion film for wafer back grinding and its manufacturing method
KR102571694B1 (en) * 2022-12-20 2023-08-29 율촌화학 주식회사 Thermosetting adhesive composition and surface protection film comprising the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187832A (en) 2010-03-10 2011-09-22 Hitachi Maxell Ltd Adhesive sheet for grinding wafer back face, method of manufacturing the same, and method of using the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090121254A (en) * 2008-05-20 2009-11-25 주식회사 엘지화학 Pressure-sensitive adhesive film, dicing die bonding film and semiconductor wafer
KR101372564B1 (en) * 2011-11-22 2014-03-14 니타 가부시키가이샤 Acrylate based adhesive composition for optical use, acrylate based adhesive sheet for optical use and method for separating optical component using the same
KR101589340B1 (en) * 2013-02-22 2016-01-27 (주)엘지하우시스 Surface protecting adhesive film for semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187832A (en) 2010-03-10 2011-09-22 Hitachi Maxell Ltd Adhesive sheet for grinding wafer back face, method of manufacturing the same, and method of using the same

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