KR102032952B1 - Build-up method for semeconductor devices - Google Patents

Abstract

The present invention relates to a method for building up a semiconductor device, which can realize a fine pattern uniformly and can have excellent adhesion reliability between an insulating layer and a metal thin film layer.

Description

BUILD-UP METHOD FOR SEMECONDUCTOR DEVICES

The present invention relates to a method for building up a semiconductor device, and more particularly, to a method for building up a semiconductor device, which can realize a fine pattern uniformly and has excellent adhesion reliability between an insulating layer and a metal thin film layer. will be.

BACKGROUND Recently, electronic devices are becoming smaller, lighter, and higher in performance. To this end, as the application of build-up printed circuit boards (build-up PCBs) is rapidly expanding, mainly for small devices, the use of multilayer printed circuit boards is rapidly increasing.

Multi-layer printed circuit boards can be made from flat wiring to three-dimensional wiring. Especially in the industrial electronic field, the integration of functional devices such as integrated circuit (IC) and large scale integration (LSI) is improved, along with miniaturization, light weight, high performance, and structural improvement of electronic devices. It is advantageous for integrating electrical functions, shortening assembly time and reducing costs.

In a build-up PCB used in this application area, a via hole must be formed for the electrical connection between the layers, which corresponds to the electrical connection path between the layers of the substrate. Although it is formed by (Mechanical Drill), due to the miniaturization of the circuit, the hole size decreases, and the machining method using the laser has appeared as an alternative due to the increase in the machining cost and the limitation of the fine hole processing due to the mechanical drilling.

However, in the case of a laser processing method, a CO ₂ laser or a YAG laser drill is usually used. Since the size of the via hole is determined by the laser drill, for example, in the case of a CO ₂ laser drill, a diameter of 40 μm or less is used. There is a limit that is difficult to manufacture the via holes having, and also, if a large number of via holes must be formed, there is a large cost burden.

Thus, instead of the above-described laser processing method, a method of forming via holes having a small diameter using a photosensitive insulating material at low cost has been proposed. Specifically, the photosensitive insulating material may be a photosensitive insulating film called a solder resist capable of forming a fine opening pattern using photosensitive properties.

These photosensitive insulating materials or solder resists use acid-modified acrylate resins containing a number of carboxylic acids and acrylate groups to provide photosensitivity for pattern formation. Since most acrylate groups and carboxyl groups are connected by ester bonds, In order to polymerize into a shape, a polymerization inhibitor or the like is included, and a photoinitiator or the like is also included to cause a radical reaction by ultraviolet irradiation.

However, the polymerization inhibitor, photoinitiator and the like can diffuse out of the resin under high temperature conditions, thereby lowering the adhesive strength of the insulating layer or the conductive layer and causing the interface to fall off.

In addition, the ester bond in the resin may cause a hydrolysis reaction at high humidity, reduce the crosslinking density of the resin to increase the moisture absorption rate of the resin, accordingly, the polymerization inhibitor or photoinitiator, etc. It can diffuse out to further accelerate the deterioration of adhesion.

Accordingly, there is a need to develop a semiconductor device build-up method capable of uniformly implementing a fine pattern at low cost and having excellent adhesion reliability between the insulating layer and the metal thin film layer.

The present invention provides a method for building up a semiconductor device, which can realize a fine pattern uniformly and can have excellent adhesion reliability between an insulating layer and a metal thin film layer.

The present invention comprises the steps of forming a curable resin insulating layer on which a first pattern is formed on a substrate on which a circuit is formed; Pretreating the surface of the curable resin insulating layer, on which the first pattern is formed, with an etchant containing a fluorine compound; And forming a metal thin film layer on the curable resin insulating layer whose surface is pretreated.

According to the build-up method of the semiconductor device of the present invention, the present invention can build up a semiconductor device capable of uniformly implementing a fine pattern and having excellent adhesion reliability between the insulating layer and the metal thin film layer.

1 is a build-up process diagram of a semiconductor device according to an embodiment of the present invention.
2 is a build-up process diagram of a semiconductor device according to an embodiment of the present invention.
3 is a build-up process diagram of a semiconductor device according to an embodiment of the present invention.
4 is a photograph of the surface of the curable resin insulating layer after pretreatment in a method of building up a semiconductor device according to an embodiment of the present invention, and then observed by the FE-SEM.
5 is a result of measuring the roughness of the surface after pretreatment of the surface of the curable resin insulating layer in the build-up method of a semiconductor device according to an embodiment of the present invention.

The build-up method of the semiconductor device of the present invention includes the steps of: forming a curable resin insulating layer having a first pattern formed on a substrate on which a circuit is formed; Pretreating the surface of the curable resin insulating layer, on which the first pattern is formed, with an etchant containing a fluorine compound; And forming a metal thin film layer on the curable resin insulating layer whose surface is pretreated.

In the present invention, terms such as first and second are used to describe various components, and the terms are used only for the purpose of distinguishing one component from another component.

Also, the terminology used herein is for the purpose of describing example embodiments only and is not intended to be limiting of the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. As used herein, the terms "comprise", "comprise" or "have" are intended to indicate that there is a feature, number, step, component, or combination thereof, that is, one or more other features, It should be understood that it does not exclude in advance the possibility of the presence or addition of numbers, steps, components, or combinations thereof.

Also in the present invention, when each layer or element is referred to as being formed "on" or "on" of each layer or element, it means that each layer or element is formed directly on each layer or element, or It is meant that a layer or element can additionally be formed between each layer, on the object, the substrate.

As the invention allows for various changes and numerous modifications, particular embodiments will be illustrated and described in detail below. However, this is not intended to limit the present invention to the specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

In the present specification, a method of forming a pattern by applying a mask to a photocurable or photosensitive binder, and then exposing and developing the mask may be applied to both a positive method and a negative method, which is a pattern to be formed and a scene to be used. It can select suitably according to the characteristic of a chemical conversion or photosensitive material.

Hereinafter, the present invention will be described in more detail.

According to one or more exemplary embodiments, a method of building a semiconductor device includes: forming a curable resin insulating layer having a first pattern formed on a substrate on which a circuit is formed; Pretreating the surface of the curable resin insulating layer, on which the first pattern is formed, with an etchant containing a fluorine compound; And forming a metal thin film layer on the curable resin insulating layer whose surface is pretreated.

When stacking, ie, building up, a semiconductor device, an insulating layer using an insulating material is generally formed for electrical disconnection of a base layer and an upper layer, or a lower layer and an upper layer, and for electrical connection between the layers. After the via hole is formed, a metal thin film layer, ie, a conductive layer, may be formed on the insulating layer to provide an electrical passage between the layers through the via hole.

However, as described above, the polymerization inhibitor or photoinitiator used together with the insulating material lowers the adhesion between the insulating layer and the metal thin film layer, that is, the conductive layer, and eventually causes an interface drop off at the boundary between the insulating layer and the metal thin film layer. It can be, and melted in the process for removing the smear, that is, the desmear (desmear) process, a problem that can not play a role as an insulating material may occur.

According to one embodiment of the present invention, the present invention forms fine pores on the surface of the curable resin insulating layer on which the first pattern is formed by pretreatment, thereby providing excellent performance with subsequent materials such as metal thin films without significant change in surface roughness. It was confirmed that the adhesion reliability can be realized, and completed the present invention.

By using this, a finer pattern may be formed in a uniform form than the laser processing method such as an ABF process, and excellent adhesion reliability between the conductive layer and the insulating layer may be realized in the manufactured semiconductor device.

In addition, a process of forming a pattern by photocuring only a portion of the insulating layer, developing it, and then forming a conductive layer (Photoimageable dielectric process, PID process) can be performed more quickly and at a relatively lower cost than conventional laser processing. Since mass production is possible, the efficiency of the process can be improved.

1 is a build-up process diagram of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 1, the curable resin insulating layer 200 on which the first pattern is formed is formed on the substrate 100 on which the circuit is formed, and the surface of the curable resin insulating layer 200 on which the first pattern is formed is formed. After pretreatment with an etchant containing a fluorine compound, a series of processes of forming the metal thin film layer 300 on the curable resin insulating layer 201 pretreated may be confirmed.

According to an embodiment of the present disclosure, the forming of the curable resin insulating layer having the first pattern may include forming an alkali developable photocurable and thermosetting binder resin layer on the substrate on which the circuit is formed; Forming a first pattern on the binder resin layer using a first pattern mask and performing alkali development; And thermosetting the binder resin layer.

2 is a build-up process diagram of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 2, in the forming of the curable resin insulating layer 200 having the first pattern formed thereon, an alkali developable photocurable and thermosetting binder resin layer 210 is formed on the substrate 100 on which the circuit is formed. Making; Forming a first pattern on the binder resin layer 210 by using a first pattern mask 211 and performing alkali development; And thermosetting the binder resin layer, respectively.

In addition, according to another embodiment of the present invention, the binder resin may include an acid-modified oligomer, a photopolymerizable monomer, a thermosetting binder resin, and a photoinitiator.

And the method of forming a 1st pattern in the said binder resin layer using a 1st pattern mask is not limited to the example, For example, contacting the mask in which the said 1st pattern was formed and irradiating an ultraviolet-ray, After the first pattern included in the mask is imaged through the projection objective lens, it may be selectively irradiated by irradiating ultraviolet rays, or directly by using a laser diode as a light source, and then irradiating ultraviolet rays. Can be.

At this time, the ultraviolet irradiation may be irradiated at about 100mJ / cm ² to about 500mJ / cm ² intensity, for example, by UV of about 360nm wavelength band, the wavelength, irradiation intensity, irradiation time and the like It may vary depending on the degree of photocuring of the resin layer.

In the exposing step, the unsaturated functional group contained in the acid-modified oligomer and the unsaturated functional group contained in the photopolymerizable monomer may cause photocuring to form crosslinks with each other, and as a result, a crosslinked structure formed by photocuring in the exposed portion is formed. Can be.

Subsequently, when the development is performed using the alkaline developer, the binder resin layer of the exposed part having the crosslinked structure is left on the substrate on which the circuit is formed, and the binder resin layer of the remaining non-exposed part may be dissolved in the alkaline developer and removed.

Examples of the alkaline developer are not particularly limited, but, for example, alkaline aqueous solutions such as potassium hydroxide, sodium hydroxide, sodium carbonate, potassium carbonate, sodium phosphate, sodium silicate, ammonia and amines can be used. Usage is not greatly limited.

Then, when the remaining resin composition is heat-treated by heat curing, the carboxyl groups contained in the acid-modified oligomer may react with the thermosetting functional groups of the thermosetting binder to form crosslinks, and as a result, the crosslinked structure by thermosetting While being formed, it becomes possible to form the curable resin insulating layer on which the first pattern is formed.

Hereinafter, the alkali developable photocurable and thermosetting binder resin compositions used for forming the curable resin insulating layer will be described in more detail for each component.

Acidity  Oligomer

Acid-modified oligomers have carboxyl groups (-COOH) and photocurable unsaturated functional groups. Such acid-modified oligomers form cross-links with other components of the resin composition, that is, photopolymerizable monomers and / or thermosetting binders, by photocuring to form a curable resin insulating layer, and the curable resin insulating layer including a carboxyl group is alkali-developed. Have sex.

Such acid-modified oligomers are oligomers having a carboxyl group and a photocurable functional group, for example, a functional group including an acrylate group or an unsaturated double bond in the molecule, and all components previously known to be usable in the photocurable resin composition are limited. Can be used without

For example, the main chain of the acid-modified oligomer may be a novolac epoxy or polyurethane, and may be used as the acid-modified oligomer having a carboxyl group and an acrylate group introduced into the main chain. The photocurable functional group may suitably be an acrylate group, wherein the acid-modified oligomer may be obtained as an oligomer form by copolymerizing a polymerizable monomer having a carboxyl group with an acrylate monomer.

More specifically, specific examples of the acid-modified oligomer usable in the resin composition include the following components.

(1) Obtained by copolymerizing unsaturated carboxylic acids (a) such as (meth) acrylic acid and compounds (b) having unsaturated double bonds such as styrene, α-methylstyrene, lower alkyl (meth) acrylate, and isobutylene Carboxyl group-containing resins;

(2) ethylenically unsaturated groups such as vinyl groups, allyl groups, (meth) acryloyl groups, epoxy groups, acid chlorides, and the like, as part of the copolymer of the unsaturated carboxylic acid (a) and the compound (b) having an unsaturated double bond Carboxyl group-containing photosensitive resin obtained by making a compound which has a reactive group, for example, glycidyl (meth) acrylate react, and adding an ethylenically unsaturated group as a pendant;

(3) to a copolymer of a compound (c) having an unsaturated double bond with an epoxy group such as glycidyl (meth) acrylate and α-methylglycidyl (meth) acrylate and a compound (b) having an unsaturated double bond; Carboxyl group-containing photosensitive resin obtained by making unsaturated carboxylic acid (a) react, and making saturated or unsaturated polybasic acid anhydride (d), such as phthalic anhydride, tetrahydrophthalic anhydride, and hexahydrophthalic anhydride, react with the produced | generated secondary hydroxy group;

(4) One hydroxy group such as hydroxyalkyl (meth) acrylate in a copolymer of an acid anhydride (e) having an unsaturated double bond such as maleic anhydride and itaconic anhydride and a compound (b) having an unsaturated double bond Carboxyl group-containing photosensitive resin obtained by making compound (f) which has 1 or more ethylenically unsaturated double bond react;

(5) The epoxy group of the polyfunctional epoxy compound (g) which has two or more epoxy groups in the molecule mentioned later, or the polyfunctional epoxy resin in which the hydroxy group of the polyfunctional epoxy compound was further epoxidized with epichlorohydrin, (meth The carboxyl group of unsaturated monocarboxylic acid (h) such as acrylic acid is subjected to esterification reaction (full esterification or partial esterification, preferably total esterification) and further saturated or unsaturated polybasic acid anhydride (d) Carboxyl group-containing photosensitive compound obtained by making it react;

(6) 1 in 1 molecule of an alkyl group having 2 to 17 carbon atoms, an aromatic group-containing alkyl carboxylic acid, etc., in the epoxy group of the copolymer of the compound (b) having an unsaturated double bond and glycidyl (meth) acrylate A carboxyl group-containing resin obtained by reacting an organic acid (i) having two carboxyl groups and not having an ethylenically unsaturated bond and reacting a saturated or unsaturated polybasic acid anhydride (d) with the resulting secondary hydroxy group;

(7) diisocyanates (j) such as aliphatic diisocyanates, branched aliphatic diisocyanates, alicyclic diisocyanates and aromatic diisocyanates; carboxyl group-containing dialcohol compounds (k) such as dimethylolpropionic acid and dimethylolbutanoic acid, and polycarbox Diol compounds such as carbonate polyols, polyether polyols, polyester polyols, polyolefin polyols, acrylic polyols, bisphenol A alkylene oxide adducts, diols, phenolic hydroxyl groups and compounds having alcoholic hydroxyl groups ( carboxyl group-containing urethane resin obtained by the polyaddition reaction of m);

(8) diisocyanate (j), bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, brominated bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bixylenol type epoxy resin, non Photosensitive properties obtained by polyaddition reaction of (meth) acrylate or partial acid anhydride modified product (n) of bifunctional epoxy resins, such as a phenol type epoxy resin, its carboxyl group-containing dialcohol compound (k), and a diol compound (m) Carboxyl group-containing urethane resin;

(9) Compound (f) having one hydroxy group such as hydroxyalkyl (meth) acrylate and one or more ethylenically unsaturated double bonds is added during the synthesis of the resin of the above (7) or (8) and unsaturated at the terminal. Carboxyl group-containing urethane resin which introduce | transduced the double bond;

(10) A compound having one isocyanate group and one or more (meth) acryloyl groups in a molecule such as an equimolar reactant of isophorone diisocyanate and pentaerythritol triacrylate during the synthesis of the resin (7) or (8). Carboxyl group-containing urethane resin which was added and terminal (meth) acrylated;

(11) Saturated or unsaturated polybasic anhydrides with respect to the primary hydroxy group in the modified oxetane compound obtained by reacting unsaturated monocarboxylic acid (h) with a polyfunctional oxetane compound having two or more oxetane rings in a molecule as described later. carboxyl group-containing photosensitive resin obtained by making (d) react;

(12) Carboxyl group-containing photosensitive resin obtained by introducing an unsaturated double bond into the reaction product of a bisepoxy compound and bisphenols, and then making a saturated or unsaturated polybasic acid anhydride (d) react;

(13) Novolak-type phenol resins, alkylene oxides such as ethylene oxide, propylene oxide, butylene oxide, trimethylene oxide, tetrahydrofuran, tetrahydropyran and / or ethylene carbonate, propylene carbon Unsaturated monocarboxylic acid (h) is reacted with a reaction product with cyclic carbonates such as carbonate, butylene carbonate, 2,3-carbonate propyl methacrylate, and saturated or unsaturated polybasic acid. Carboxyl group-containing photosensitive resin obtained by making anhydride (d) react;

Among the above-mentioned components, in the said (7)-(10), when the isocyanate group containing compound used for resin synthesis becomes diisocyanate which does not contain a benzene ring, and in said (5) and (8), When the polyfunctional and bifunctional epoxy resin used for synthesis becomes a compound of the linear structure which has bisphenol A frame | skeleton, bisphenol F frame | skeleton, biphenyl frame | skeleton, or bixylenol frame | skeleton, or its hydrogenated compound, flexibility of an insulating layer, etc. In terms of components, components usable preferably as acid-modified oligomers can be obtained. In addition, in another aspect, the modified product of the resins of the above (7) to (10) is preferable for the bending including the urethane bond in the main chain.

In addition, commercially available components may be used as the acid-modified oligomer described above, and specific examples of such components include ZAR-2000, ZFR-1031, ZFR-1121 or ZFR-1122 manufactured by Nippon Chemical Co., Ltd.

On the other hand, the acid-modified oligomer described above may be included in an amount of about 15 to about 75% by weight, or about 20 to about 50% by weight, or about 25 to about 45% by weight relative to the total weight of the resin composition of one embodiment. When the content of the acid-modified oligomer is too small, alkali developability may decrease, and the strength of the curable resin insulating layer may decrease. On the contrary, if the content of the acid-modified oligomer is too high, it may be excessively developed, and the uniformity may be degraded during coating.

In addition, the acid value of the acid-modified oligomer may be about 40 to about 120 mgKOH / g, or about 50 to about 110 mgKOH / g, or about 60 to about 90 mgKOH / g. If the acid value is too low, alkali developability may be lowered. On the contrary, if the acid value is too high, the photocurable part, for example, the exposed part may be dissolved by the developer, and thus, normal pattern formation may be difficult.

Photopolymerizable  Monomer

Such a photopolymerizable monomer may be, for example, a compound having a photocurable unsaturated functional group, such as two or more polyfunctional vinyl groups, and may form a crosslink with the unsaturated functional group of the acid-modified oligomer described above to provide photocuring during exposure. Crosslinked structure can be formed. Thereby, the resin composition of the exposure part corresponding to the part in which the curable resin insulating layer is to be formed can be left without alkali development.

As the photopolymerizable monomer, a liquid phase may be used at room temperature, and accordingly, the viscosity of the resin composition of one embodiment may be adjusted according to the coating method, or the role of improving the alkali developability of the non-exposed part may also be combined.

As said photopolymerizable monomer, the (meth) acrylate type compound which has 2 or more, 3 or more, or 3 to 6 photocurable unsaturated functional groups in a molecule | numerator can be used, More specifically, pentaerythritol Hydroxyl group-containing polyfunctional acrylate compounds such as triacrylate or dipentaerythritol pentaacrylate; Water-soluble polyfunctional acrylate compounds such as polyethylene glycol diacrylate or polypropylene glycol diacrylate; Polyfunctional polyester acrylate compounds of polyhydric alcohols such as trimethylolpropane triacrylate, pentaerythritol tetraacrylate, or dipentaerythritol hexaacrylate; Acrylate compounds of ethylene oxide adducts and / or propylene oxide adducts of polyfunctional alcohols such as trimethylolpropane or hydrogenated bisphenol A or polyhydric phenols such as bisphenol A and biphenol; A polyfunctional or monofunctional polyurethane acrylate compound which is an isocyanate modified product of the hydroxy group-containing polyfunctional acrylate compound; Epoxy acrylate compounds that are (meth) acrylic acid adducts of bisphenol A diglycidyl ether, hydrogenated bisphenol A diglycidyl ether, or phenol novolac epoxy resins; Caprolactone-modified acrylate compounds such as caprolactone-modified ditrimethylolpropane tetraacrylate, acrylate of ε-caprolactone-modified dipentaerythritol, or caprolactone-modified hydroxypivalatene neopentyl glycol ester diacrylate, And one or more compounds selected from the group consisting of photosensitive (meth) acrylate-based compounds such as (meth) acrylate-based compounds corresponding to the above-mentioned acrylate-based compounds, and these may be used alone or in combination of two or more thereof. Can also be used.

Among these, as the photopolymerizable monomer, a polyfunctional (meth) acrylate-based compound having two or more, or three or more, or three to six (meth) acryloyl groups in one molecule can be preferably used. In particular, pentaerythritol triacrylate, trimethylol propane triacrylate, dipentaerythritol hexaacrylate, caprolactone-modified ditrimethylol propane tetraacrylate, and the like can be appropriately used. Examples of commercially available photopolymerizable monomers include DPEA-12 manufactured by Nippon Chemical Co., Ltd., and the like.

The content of the photopolymerizable monomer described above may be about 5 to 30% by weight, about 7 to 20% by weight, or about 7 to 15% by weight based on the total weight of the resin composition. When the content of the photopolymerizable monomer is too small, the photocuring may not be sufficient, and when too large, the drying property may deteriorate and the physical properties may decrease.

Thermosetting binder

The thermosetting binder contains at least one member selected from a thermosetting functional group such as an epoxy group, an oxetanyl group, a cyclic ether group and a cyclic thio ether group. Such a thermosetting binder may form a crosslinking bond with an acid-modified oligomer or the like by thermosetting to secure heat resistance or mechanical properties of the curable resin insulating layer.

Such a thermosetting binder may have a softening point of about 70 to 100, thereby reducing unevenness during lamination. When the softening point is low, the stickiness of the curable resin insulating layer increases, and when the softening point is high, the flowability may deteriorate.

As the thermosetting binder, a resin having two or more cyclic ether groups and / or cyclic thioether groups (hereinafter referred to as cyclic (thio) ether groups) in a molecule can be used, and a bifunctional epoxy resin can be used. have. Other diisocyanates or their difunctional block isocyanates can also be used.

The thermosetting binder having two or more cyclic (thio) ether groups in the molecule may be a compound having any one or two or more of three, four or five membered cyclic ether groups, or cyclic thioether groups in the molecule. have. The thermosetting binder may be a polyfunctional epoxy compound having at least two epoxy groups in a molecule, a polyfunctional oxetane compound having at least two oxetanyl groups in a molecule, or an episulfide resin having two or more thioether groups in a molecule And so on.

As a specific example of the said polyfunctional epoxy compound, bisphenol-A epoxy resin, hydrogenated bisphenol-A epoxy resin, brominated bisphenol-A epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, novolak-type epoxy resin, for example , Phenol novolak type epoxy resin, cresol novolak type epoxy resin, N-glycidyl type epoxy resin, bisphenol A novolak type epoxy resin, bixylenol type epoxy resin, biphenol type epoxy resin, chelate type epoxy resin, glyc Oxal type epoxy resin, amino group containing epoxy resin, rubber modified epoxy resin, dicyclopentadiene phenolic epoxy resin, diglycidyl phthalate resin, heterocyclic epoxy resin, tetraglycidyl xylenoyl ethane resin, silicone modified epoxy resin and (epsilon) -caprolactone modified epoxy resins. In addition, in order to impart flame retardancy, those in which atoms such as phosphorus are introduced into the structure may be used. By thermosetting these epoxy resins, characteristics, such as adhesiveness of a cured film, solder heat resistance, and electroless plating resistance, are improved.

Examples of the polyfunctional oxetane compound include bis [(3-methyl-3-oxetanylmethoxy) methyl] ether, bis [(3-ethyl-3-oxetanylmethoxy) methyl] ether, 1,4-bis [( 3-methyl-3-oxetanylmethoxy) methyl] benzene, 1,4-bis [(3-ethyl-3-oxetanylmethoxy) methyl] benzene, (3-methyl-3-oxetanyl) methylacrylic Latex, (3-ethyl-3-oxetanyl) methyl acrylate, (3-methyl-3-oxetanyl) methyl methacrylate, (3-ethyl-3-oxetanyl) methyl methacrylate or these In addition to polyfunctional oxetanes such as oligomers and copolymers, oxetane alcohols and novolac resins, poly (p-hydroxystyrenes), cardo-type bisphenols, charixarenes, carlixresolecinarenes, or silses And etherates with resins having hydroxy groups such as quoxane. In addition, the copolymer etc. of the unsaturated monomer which has an oxetane ring, and an alkyl (meth) acrylate are mentioned.

As a compound which has two or more cyclic thioether group in the said molecule | numerator, bisphenol A episulfide resin YL7000 by the Japan epoxy resin company, etc. are mentioned, for example. Moreover, episulfide resin etc. which substituted the oxygen atom of the epoxy group of the novolak-type epoxy resin with the sulfur atom can also be used.

Moreover, as marketed, YDCN-500-80P etc. of Kukdo Chemical Co., Ltd. can be used.

The thermosetting binder may be included in an amount corresponding to 0.8 to 2.0 equivalents based on 1 equivalent of the carboxyl group of the acid-modified oligomer. When the content of the thermosetting binder is too small, carboxyl groups remain in the insulating layer after curing, and heat resistance, alkali resistance, electrical insulation, and the like may decrease. On the contrary, when the content is too large, it is not preferable because the low molecular weight thermosetting binder remains in the dry coating film because the strength and the like of the coating film decrease.

Silane system Coupling agent

In addition, according to an embodiment of the present invention, the insulating resin composition may further include about 1 to about 10 wt%, preferably about 1 to about 5 wt% of the silane coupling agent based on 100 wt% of the total composition. It may be.

Specifically, the silane coupling agent may be an alkoxy silane compound including an alkoxy silane group. The alkoxy silane group may form a silanol group or a silyl ether repeating unit by hydrolysis or the like in the composition, the silanol group is bonded to the metal surface in the silyl ether repeating unit, and the remaining organic residue is the polymer side. In combination with, the adhesion can be improved at the interface between the conductive layer whose main component is a metal and the curable resin insulating layer.

In addition to the above-mentioned components, the resin composition of one embodiment includes a solvent; And at least one selected from the group consisting of a thermosetting binder catalyst (thermosetting catalyst), a filler, a pigment, and an additive to be described later.

Thermosetting binder catalyst ( Thermosetting  catalyst)

The thermosetting binder catalyst serves to promote thermosetting of the thermosetting binder.

As such a thermosetting binder catalyst, for example, imidazole, 2-methylimidazole, 2-ethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 4-phenylimidazole Imidazole derivatives such as 1-cyanoethyl-2-phenylimidazole and 1- (2-cyanoethyl) -2-ethyl-4-methylimidazole; Amines such as dicyandiamide, benzyldimethylamine, 4- (dimethylamino) -N, N-dimethylbenzylamine, 4-methoxy-N, N-dimethylbenzylamine, 4-methyl-N, N-dimethylbenzylamine compound; Hydrazine compounds such as adipic dihydrazide and sebacic acid dihydrazide; Phosphorus compounds, such as a triphenylphosphine, etc. are mentioned. Moreover, as what is marketed, 2MZ-A, 2MZ-OK, 2PHZ, 2P4BHZ, 2P4MHZ (all are brand names of an imidazole type compound) by Shikoku Kasei Kogyo Co., Ltd., U-CAT3503N and UCAT3502T by San Apro Corporation (All are brand names of block isocyanate compounds of dimethylamine), DBU, DBN, U-CATSA102, U-CAT5002 (both bicyclic amidine compounds and salts thereof) and the like. It is not specifically limited to these, It may be the thing which accelerates reaction of the thermosetting catalyst of an epoxy resin or an oxetane compound, or an epoxy group and / or an oxetanyl group, and a carboxyl group, It can also be used individually or in mixture of 2 or more types. . Also, guanamine, acetoguanamine, benzoguanamine, melamine, 2,4-diamino-6-methacryloyloxyethyl-S-triazine, 2-vinyl-4,6-diamino-S-tri Azine, 2-vinyl-4,6-diamino-S-triazine isocyanuric acid adduct, 2,4-diamino-6-methacryloyloxyethyl-S-triazine isocyanuric acid adduct S-triazine derivatives, such as these, can also be used, Preferably, the compound which also functions as these adhesive imparting agents can be used together with the said thermosetting binder catalyst.

The content of the thermosetting binder catalyst may be about 0.3 to about 15% by weight based on the total weight of the resin composition in terms of suitable thermosetting.

filler

The filler plays a role of improving heat stability, dimensional stability by heat, and resin adhesion. In addition, it also serves as a constitution pigment by reinforcing the color.

As the filler, inorganic or organic fillers can be used, for example barium sulfate, barium titanate, amorphous silica, crystalline silica, fused silica, spherical silica, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide (alumina), Aluminum hydroxide, mica and the like can be used.

The content of the filler is preferably about 5 to about 50% by weight based on the total weight of the composition. When the filler is excessively used, the viscosity of the composition is increased, so that the coating property is degraded or the degree of curing is poor, which is not preferable.

Pigment

Pigments exhibit visibility and hiding power to hide defects such as scratches on circuit lines.

As the pigment, a red, blue, green, yellow, black pigment or the like can be used. As the blue pigment, phthalocyanine blue, pigment blue 15: 1, pigment blue 15: 2, pigment blue 15: 3, pigment blue 15: 4, pigment blue 15: 6, pigment blue 60, and the like can be used. have. Pigment Green 7, Pigment Green 36, Solvent Green 3, Solvent Green 5, Solvent Green 20, Solvent Green 28, etc. may be used as the green pigment. Examples of the yellow pigments include anthraquinones, isoindolinones, condensed azos, and benzimidazolones. Pigment Yellow 108, Pigment Yellow 147, Pigment Yellow 151, Pigment Yellow 166, Pigment Pigment yellow 181, pigment yellow 193 and the like can be used.

The content of the pigment is preferably used at about 0.5 to about 3% by weight based on the total weight of the resin composition. When used in less than about 0.5% by weight, visibility and hiding power is reduced, when used in excess of about 3% by weight is less heat resistance.

additive

The additive may be added to remove bubbles in the resin composition or remove popping or craters from the surface of the film, impart flame retardancy, adjust viscosity, and catalyze the film.

Specifically, known conventional thickeners such as finely divided silica, organic bentonite and montmorillonite; Antifoaming agents and / or leveling agents such as silicone, fluorine, and polymers; Known and common additives such as flame retardants such as phosphorus flame retardants and antimony flame retardants can be blended.

Among them, the leveling agent serves to remove the popping or craters of the surface when the film is coated, for example, BYK-380N, BYK-307, BYK-307, BYK-378, BYK-350, etc. of BYK-Chemie GmbH.

The content of the additive is preferably about 0.01 to about 10% by weight based on the total weight of the resin composition.

solvent

One or more solvents may be used in combination to dissolve the resin composition or to impart an appropriate viscosity.

As a solvent, Ketones, such as methyl ethyl ketone and cyclohexanone; Aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene; Ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether Glycol ethers (cellosolve) such as dipropylene glycol diethyl ether and triethylene glycol monoethyl ether; Ethyl acetate, butyl acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, propylene glycol monomethyl ether acetate, dipropylene glycol monomethyl ether acetate Acetate esters, such as these; Alcohols such as ethanol, propanol, ethylene glycol, propylene glycol and carbitol; Aliphatic hydrocarbons such as octane and decane; Petroleum solvents such as petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha and solvent naphtha; Amides such as dimethylacetamide and dimethylformamide (DMF). These solvents can be used alone or as a mixture of two or more thereof.

The content of the solvent may be about 10 to about 50% by weight based on the total weight of the resin composition. If less solvent is used, the viscosity is high, the coating property is poor, and if the solvent is used excessively, the drying is not good, the stickiness increases.

At the time of formation of the said alkali developable photocurable and thermosetting binder resin layer, the alkali developable photocurable and thermosetting binder resin composition is apply | coated directly on the board | substrate with which the said circuit was formed, and it dried, or on a carrier film After apply | coating and laminating a film and a board | substrate using the dry film state which apply | coated the resin composition mentioned above and dried, the method etc. which remove a carrier film can also be used.

When using the form of a film, it can be based on the following process.

50-130 degreeC temperature after apply | coating the above-mentioned resin composition to a carrier film with a comma coater, a blade coater, a lip coater, a rod coater, a squeeze coater, a reverse coater, a transfer roll coater, a gravure coater, a spray coater, etc. After passing through the oven for 1 to 30 minutes and dried, by laminating a release film (Release Film), it is possible to produce a dry film composed of a carrier film, an alkali developable photocurable and thermosetting binder resin layer, a release film from below have. The alkali developable photocurable and thermosetting binder resin layer may have a thickness of about 5 to 100 μm. In this case, a plastic film such as polyethylene terephthalate (PET), a polyester film, a polyimide film, a polyamideimide film, a polypropylene film, a polystyrene film may be used as the carrier film, and polyethylene (PE), A polytetrafluoroethylene film, a polypropylene film, a surface treated paper, or the like can be used, and when the release film is peeled off, it is preferable that the adhesive force of the photosensitive film and the release film is lower than that of the photosensitive film and the carrier film.

In addition, according to an embodiment of the present disclosure, after forming the curable resin insulating layer having the first pattern formed on the substrate on which the circuit is formed, the method may further include removing smear before pretreatment.

The curable resin insulating layer formed by the above method has a via hole for electrical connection with a substrate having a lower circuit formed by the first pattern, which is an alkali phenomenon in the via hole, that is, the first pattern. In the portion removed by the portion, the portion of which is not completely removed, or a portion of the resin of the insulating layer is eluted in the process of development, such as a smear may remain on the inner wall of the hole. This may interfere with the electrical connection, such as plating in subsequent processes.

Therefore, it is preferable to further remove the smear and further proceed with a process of completely exposing the portion of the lower circuit portion that requires electrical connection with the upper portion, that is, a desmear process, in this case, a sweller treatment, The desmear process may be followed by a desmear process generally used in the technical field of the present invention, such as neutralization.

Referring to FIG. 2, after the step of forming the curable resin insulating layer 200 in which the first pattern is formed, a smear remaining in the opening and a desmear process of removing the smear may be confirmed.

According to another embodiment of the invention, it is preferable that the etching solution containing the fluorine compound includes ammonium fluoride and / or ammonium hydrogen fluoride in terms of environmental and process risks.

In this case, the etching solution containing the fluorine compound may be used at a concentration of about 1 wt% to about 20 wt%.

The pretreatment may be performed at a temperature of about 15 to about 80 ° C. for about 1 to about 30 minutes, preferably about 1 to about 15 minutes, or about 5 to about 10 minutes.

If the concentration and time range are not in the above-mentioned range, sufficient pretreatment to the surface may not be performed, and thus the effect of improving adhesion may be insignificant. On the contrary, excessive exposure may damage the circuit pattern, and the surface may be severely damaged. However, there is a possibility that a problem that the adhesion strength and adhesion stability rather deteriorate occurs.

As described above, by such pretreatment, fine pores may be formed on the surface of the curable resin insulating layer, and thus, excellent adhesion reliability with a subsequent material such as a metal thin film may be realized. Specifically, the surface of the pretreated curable resin insulating layer, can be of about ² per 1㎛, a diameter of about 10nm to about 2㎛ the micropores formed from about 20 to about 200.

The surface roughness Rz of the curable resin insulating layer may be formed to be 1 μm or more, or about 1 μm to about 2 μm, and the surface roughness Rq is about 60 nm or more, preferably about 60 nm to about 100 nm. The surface roughness (Ra) value may be about 100 nm or less, preferably about 10 nm to about 80 nm.

If the surface roughness (Rz) or (Rq) value is out of the above range, in the pattern forming process, there may occur a problem that can not implement good bonding reliability, and if the surface roughness (Ra) is out of the above range, pattern formation In the process, a problem may arise in that a proper pattern is not formed due to the roughness difference.

4 is a photograph of the surface of the curable resin insulating layer after the pretreatment of the surface of the curable resin insulating layer according to an embodiment of the present invention, and the surface is observed by FE-SEM, and FIG. It is a result of measuring the roughness of the surface after preprocessing the surface of curable resin insulating layer in the buildup method of a semiconductor element.

Referring to FIG. 5, the surface roughness of the curable resin insulating layer may be confirmed that no significant difference occurs in the surface roughness regardless of pretreatment.

In addition, referring to FIG. 4, it can be seen that fine pores are formed on the surface of the curable resin insulating layer by pretreatment. Specifically, on the surface of the pretreated curable resin insulating layer, about 1 μm ^{2 in} diameter It can be clearly seen that about 20 to about 200 spherical fine pores having about 10 nm to about 2 μm are formed.

Thereafter, a metal thin film layer for forming a conductive layer is formed on the curable resin insulating layer whose surface is pretreated. The forming of the metal thin film layer may be performed by electroless plating or sputtering, and preferably by electroless plating, but is not limited thereto, and the conductive layer or the conductive metal may be formed on the resin insulating layer. The general methods used to form the seed layer and the like are all applicable.

The metal thin film layer is connected to the lower circuit portion through the via hole formed by the first pattern and the desmear process, thereby forming an electrical connection passage between the circuit layers.

On the other hand, according to another embodiment of the invention, in order to implement another circuit in the upper layer, after forming the metal thin film layer, forming a photosensitive resin layer having a second pattern formed on the metal thin film layer; Depositing a metal layer on the metal thin film layer exposed by the second pattern of the photosensitive resin layer; And removing the metal thin film layer on which the photosensitive resin layer and the metal layer on which the second pattern is formed are not deposited.

At this time, the first pattern and the second pattern may be the same or different, the circuit by the first pattern and the second pattern may be electrically connected to each other through the above-described via hole, the second pattern is formed By removing the photosensitive resin layer and the metal thin film layer on which the metal layer is not deposited, reliability can be further improved.

3 is a build-up process diagram of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 3, after the metal thin film layer 300 is formed, forming a photosensitive resin layer 400 having a second pattern formed on the metal thin film layer 300; Depositing a metal layer 500 on the metal thin film layer 300 exposed by the second pattern of the photosensitive resin layer; And removing the metal thin film layer on which the photosensitive resin layer 400 and the metal layer on which the second pattern is formed are not deposited.

Hereinafter, the operation and effects of the invention will be described in more detail with reference to specific examples of the invention. However, these embodiments are only presented as an example of the invention, whereby the scope of the invention is not determined.

< Example >

[ Example  One]

Curable resin Insulation layer  Film manufacturing

27 wt% of ZFR-1122 of Nippon Gunpowder as an acid-modified oligomer, 10 wt% of polyfunctional epoxy acrylate (DPEA-12 of Nippon Gunpowder) as a photopolymerizable monomer, 3 wt% of Darocur TPO (Ciba Specialty Chemical Co., Ltd.) as a photoinitiator , 16% by weight of YDCN-500-80P (Kukdo Chemical Co., Ltd.) as a thermosetting binder, 2% by weight of 2MUSIZ (Shikoku Chemical Co., Ltd.) as a silane coupling agent, 1% by weight of 2-phenylimidazole as a thermosetting catalyst, UFP- as a filler 30 parts by weight of 40 (Denka Silica), 1% by weight of BYK-UV3570 by BYK, and 10% by weight of DMF as a solvent were used to mix and stir each component, and the filler was dispersed using a three-roll mill. Developable photocurable and thermosetting binder resin compositions were prepared.

After applying the prepared resin composition to the PET used as a carrier film using a comma coater, and dried by passing through an oven at 75 ℃ for 8 minutes, then laminated PE as a release film, carrier film, alkali development possible from below The dry film for curable resin insulating layer formation comprised from the photocuring and thermosetting binder resin layer and a release film was manufactured.

Semiconductor device build  work

After peeling off the release film of the manufactured dry film, the binder resin layer was vacuum laminated with a vacuum laminator (MV Seisakusho Co., Ltd. MV LP-500) on a substrate on which a circuit was formed, and then UV was applied in a 365 nm wavelength band under a pattern mask. After exposing to 400mJ / cm <^2> , the carrier film was removed. The resultant was immersed in an alkali solution of 1 wt% Na ₂ CO ₃ at 31 ° C. for 60 seconds, followed by development and heat curing at 150 ° C. for 1 hour to form a first pattern.

On the other hand, the substrate on which the circuit is formed is cut into LG Chem's copper-clad laminate LG-T-500GA having a thickness of 0.1 mm and a copper foil thickness of 12 μm into a substrate having a width of 5 cm and a length of 5 cm to form fine roughness on the surface of the copper foil by chemical etching. One was used.

The desmear process was performed to the manufactured printed circuit board on condition of Table 1 below, and smear was removed.

fair Drug used Temperature
(℃) time
(min) Swelling Securiganth MV SWELLER 65 5 NaOH (50 wt / wt%) Permanganation Securiganth MV ETCH P 80 10 NaOH (50 wt / wt%) Neutralization Securiganth MV Reduction Conditioner 50 4 H ₂ SO 4 (60wt / wt%)

After the desmear process, the printed circuit board was immersed in 50 NH ₄ F aqueous solution (10% by weight) for 10 minutes and stirred to proceed with a surface pretreatment process.

Subsequently, chemical copper plating was performed under the conditions shown in Table 2 below to form a metal thin film layer on the curable resin insulating layer whose surface was pretreated, thereby building up a semiconductor device. All reagents used are from Atotech.

fair Drug used Temperature
(℃) time
(min) Conditioning Neoganth MV Conditioner 60 5 Acid dipping H ₂ SO ₄ (60wt / wt%) RT One Pre dipping Neoganth MV Pre Dip RT One Activating Neoganth MV Activator 40 5 NaOH (50 wt / wt%) Reduction Neoganth MV Reducer 3 3 Electroless Copper plating Printoganth MV BASIC 14 14 Printoganth MV COPPER Printoganth MV Plus STABILIZER Printoganth MV STARTER Reduction Solution Copper

After the completion of chemical copper plating, electroplating was performed using the plating solution of Table 3 below in order to measure plating adhesion, and the thickness of the metal thin film layer was thickened.

Drug used volume
(liter) weight
(kg) DI water 85 85 CuSO ₄ (5H ₂ O) 20 H ₂ SO ₄
(49wt%, Density = 1.4g / cm ³ ) 8.57 12 HCl
(37wt%, density = 1.19g / cm ³ ) 0.012 0.014 Cupracid MV Brightener 0.15 EXPT Cupracid MV2 Leveller 2 EXPT Cupracid MV2 Correction 1.8

The reagents used were all manufactured by Atotech Co., Ltd., and the plating was performed for 60 minutes under a current condition of 1A.

[ Example  2]

The same procedure was followed as in Example 1, except that ZAR-2000 of Nippon Gunpowder was used as the acid-modified oligomer and no silane coupling agent was used.

[ Comparative example  One]

The same procedure as in Example 1 was conducted except that the pretreatment process using NH ₄ F was not performed.

< Experimental Example >

Surface roughness measurement

In the above Examples and Comparative Examples, after completing the pretreatment process (in the case of the comparative example, after the desmear process was completed), the surface state was observed using FE-SEM (Hitachi S-4800), and the difference in surface roughness was accurately measured. In order to measure the surface roughness values Rz and Ra by using an OP (Optical profiler, nanosystem Co., Ltd.). The FE-SEM photograph of the surface state is as shown in FIG. 4, the image measured using OP, and the Rz and Ra values are summarized in FIG. 5 and Table 4 below.

Developability  evaluation

In the alkali development process of the said Example and the comparative example, developability was evaluated.

Observation by Fe-SEM, when using a 100㎛ mask, when the developed state is 85㎛ or more, O evaluation, and summarized in Table 4 below.

Adhesion Evaluation

After the electroplating, the adhesion between the plated copper foil and the curable resin insulating layer interface was measured as follows.

In Example and Comparative Example, the plated specimen was cut to a width of 1 cm and a length of 10 cm to obtain a specimen. 90 degree peel strength was measured using the Texture Analyzer XT Plus of Stable micro system. After measuring 560mm at the speed of 5mm / s in the tension mode, the average value of the entire section is summarized in Table 4 below.

Surface roughness Developability Peel strength
(gf / cm) Rz Ra Example 1 1.24 μm 38.15nm O 478.65 Example 2 1.06 μm 52.16 nm O 388.78 Comparative Example 1 0.73 μm 40.22nm O 32.41

Referring to the experimental results of the Examples and Comparative Examples, it can be confirmed that the developability of the present application does not have a large difference between the Examples and Comparative Examples.

In addition, in the case of the Examples of the present application, compared to the Rz value of about 1 μm or more, it can be clearly seen that the Rz value of 1 μm or less in the case of the comparative example, and in the case of the Example of the present application, the peel strength is about 10 You can see that more than doubled.

On the other hand, referring to Figure 4, in the case of the embodiment of the present application, it can be confirmed that the fine pores are formed on the surface of the curable resin insulating layer by the pre-treatment, specifically, on the surface of the pre-treated curable resin insulating layer, about 1 It can be clearly seen that about 20 to about 200 spherical fine pores having a diameter of about 10 nm to about 2 μm are formed per μm ² , whereas in the comparative example, such pores are hardly present.

That is, in the embodiment of the present application, fine pores are formed on the surface of the curable resin insulating layer by pretreatment, and it can be clearly confirmed that the peel strength is significantly increased without significantly affecting the Ra value. As a result, it can be seen that a semiconductor device can be built up evenly, even though the fine pattern can be uniformly implemented, which can have excellent adhesion reliability between the insulating layer and the metal thin film layer.

100: circuit formed substrate
200: curable resin insulating layer
201: Curable resin insulating layer pretreated
210: binder resin layer
211: first pattern mask
300: metal thin film layer
400: photosensitive resin layer
500: deposited metal layer

Claims (16)

Forming a curable resin insulating layer having a first pattern formed on the substrate on which the circuit is formed;
Pretreating the surface of the curable resin insulating layer, on which the first pattern is formed, with an etchant containing ammonium fluoride; And
Forming a metal thin film layer on the curable resin insulating layer whose surface is pretreated;
Forming the curable resin insulating layer having the first pattern is formed,
Forming an alkali developable photocurable and thermosetting binder resin layer on the substrate on which the circuit is formed;
Forming a first pattern on the binder resin layer using a first pattern mask and performing alkali development; And
Including the step of thermosetting the binder resin layer,
How to build up a semiconductor device.
delete The method of claim 1,
The binder resin includes an acid-modified oligomer, a photopolymerizable monomer, a thermosetting binder resin, a silane coupling agent, and a photoinitiator.
The method of claim 3,
The acid-modified oligomer comprises a copolymer of a polymerizable monomer having a carboxyl group and an acrylate monomer.
The method of claim 3,
The said photopolymerizable monomer contains the polyfunctional (meth) acrylate type compound, The build-up method of a semiconductor element.
The method of claim 3,
The thermosetting functional group of the thermosetting binder resin is at least one member selected from the group consisting of an epoxy group, an oxetanyl group, a cyclic ether group and a cyclic thio ether group.
The method of claim 1,
And removing the smear before the pretreatment after forming the curable resin insulating layer having the first pattern formed thereon on the substrate on which the circuit is formed.
delete The method of claim 1,
The etching solution containing ammonium fluoride is used at a concentration of 1 wt% to 20 wt%.
The method of claim 1,
The pretreatment step is performed for 1 to 30 minutes at a temperature of 15 to 80 ℃, build-up method of a semiconductor device.
The method of claim 1,
By the pretreatment step, 20 to 200 fine pores having a diameter of 10 nm to 2 μm are formed per 1 μm ^{2 of} the curable resin insulating layer.
The method of claim 1,
The surface roughness Rz of the said curable resin insulating layer is formed in 1 micrometer or more by the said preprocessing, The build-up method of the semiconductor element.
The method of claim 1,
The surface roughness Rq of the said curable resin insulating layer is formed by 60 nm or more by the said preprocessing, The build-up method of the semiconductor element.
The method of claim 1,
The forming of the metal thin film layer is performed by electroless plating or sputtering.
The method of claim 1,
The metal thin film layer is a build-up method of a semiconductor device to form an electrical connection passage between each circuit layer through the via hole formed by the first pattern.
The method of claim 1,
After forming the metal thin film layer, forming a photosensitive resin layer having a second pattern formed on the metal thin film layer;
Depositing a metal layer on the metal thin film layer exposed by the second pattern of the photosensitive resin layer; And
Removing the metal thin film layer on which the photosensitive resin layer and the metal layer on which the second pattern is formed are removed.

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