KR102026742B1 - 광학 측정 시스템 및 임계치수를 측정하는 방법 - Google Patents

광학 측정 시스템 및 임계치수를 측정하는 방법 Download PDF

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Publication number
KR102026742B1
KR102026742B1 KR1020130077295A KR20130077295A KR102026742B1 KR 102026742 B1 KR102026742 B1 KR 102026742B1 KR 1020130077295 A KR1020130077295 A KR 1020130077295A KR 20130077295 A KR20130077295 A KR 20130077295A KR 102026742 B1 KR102026742 B1 KR 102026742B1
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KR
South Korea
Prior art keywords
defocusing
wavelength
module
images
illumination
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Application number
KR1020130077295A
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English (en)
Korean (ko)
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KR20140019733A (ko
Inventor
세르게이 니콜라에비치 콥띠야에프
막심 블라디미로비치 리얍꼬
알렌산더 비아체슬라보비치 슈체르바코프
알렉세이 드미트리비치 란초프
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삼성전자주식회사
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Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to US13/961,305 priority Critical patent/US9322640B2/en
Publication of KR20140019733A publication Critical patent/KR20140019733A/ko
Application granted granted Critical
Publication of KR102026742B1 publication Critical patent/KR102026742B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Spectrometry And Color Measurement (AREA)
KR1020130077295A 2012-08-07 2013-07-02 광학 측정 시스템 및 임계치수를 측정하는 방법 KR102026742B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/961,305 US9322640B2 (en) 2012-08-07 2013-08-07 Optical measuring system and method of measuring critical size

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2012133571/28A RU2509718C1 (ru) 2012-08-07 2012-08-07 Оптическая измерительная система и способ измерения критического размера
RU2012133571 2012-08-07

Publications (2)

Publication Number Publication Date
KR20140019733A KR20140019733A (ko) 2014-02-17
KR102026742B1 true KR102026742B1 (ko) 2019-09-30

Family

ID=50151433

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130077295A KR102026742B1 (ko) 2012-08-07 2013-07-02 광학 측정 시스템 및 임계치수를 측정하는 방법

Country Status (2)

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KR (1) KR102026742B1 (ru)
RU (1) RU2509718C1 (ru)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2560245C1 (ru) * 2014-03-26 2015-08-20 Самсунг Электроникс Ко., Лтд. Способ мультиспектральной визуализации и устройство для измерения критического размера наноструктур
KR20160017585A (ko) 2014-08-06 2016-02-16 김호환 자동초점 조절기능이 구비된 치수측정기 및 치수측정기의 자동초점 조절방법
RU2582484C1 (ru) * 2014-11-10 2016-04-27 Самсунг Электроникс Ко., Лтд. Оптическая измерительная система и способ количественного измерения критического размера для наноразмерных объектов
DE102017206066A1 (de) * 2017-04-10 2018-10-11 Anvajo GmbH Spektrometer
KR101863752B1 (ko) 2017-04-19 2018-06-04 공주대학교 산학협력단 광학적 웨이퍼 검사 장치의 해상력 강화 방법 및 이를 이용한 tsom 영상 획득 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038207B2 (en) * 2003-09-12 2006-05-02 Intel Corporation Critical dimension measurement by diffration
CN1918513B (zh) * 2004-02-05 2011-02-02 皇家飞利浦电子股份有限公司 掩模检查装置和方法
US7443486B2 (en) * 2005-02-25 2008-10-28 Asml Netherlands B.V. Method for predicting a critical dimension of a feature imaged by a lithographic apparatus
US7642019B2 (en) * 2005-04-15 2010-01-05 Samsung Electronics Co., Ltd. Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore
JP5502491B2 (ja) * 2006-12-22 2014-05-28 ザイゴ コーポレーション 表面特徴の特性測定のための装置および方法
US20090066970A1 (en) * 2007-05-21 2009-03-12 Muetec Automatisierte Mikroskopie Und Messtechnik Gmbh Arrangement and method for improving the measurement accuracy in the nm range for optical systems
WO2010149403A1 (en) * 2009-06-22 2010-12-29 Asml Netherlands B.V. Object inspection systems and methods
RU2415380C1 (ru) * 2009-08-20 2011-03-27 Алексей Валентинович Кучеренко Способ измерения линейных размеров (варианты) и растровый электронный микроскоп

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Publication number Publication date
RU2012133571A (ru) 2014-02-27
KR20140019733A (ko) 2014-02-17
RU2509718C1 (ru) 2014-03-20

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