KR102020934B1 - Methods for aligning a maskless exposure apparatus - Google Patents
Methods for aligning a maskless exposure apparatus Download PDFInfo
- Publication number
- KR102020934B1 KR102020934B1 KR1020120142350A KR20120142350A KR102020934B1 KR 102020934 B1 KR102020934 B1 KR 102020934B1 KR 1020120142350 A KR1020120142350 A KR 1020120142350A KR 20120142350 A KR20120142350 A KR 20120142350A KR 102020934 B1 KR102020934 B1 KR 102020934B1
- Authority
- KR
- South Korea
- Prior art keywords
- unit
- exposure
- mark
- exposure unit
- image mark
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
One embodiment of the present invention discloses a method of aligning a maskless exposure apparatus composed of a plurality of exposure units including a DMD and an optical system, which method aligns each exposure unit using an alignment key provided in the exposure unit. Aligning, controlling the DMDs of the adjacent first exposure unit and the second exposure unit to display the first image mark by the first exposure unit and the second image mark by the second exposure unit in the overlapped area; And adjusting the alignment of the first exposure unit and the second exposure unit in an aligned state of the displayed first image mark and the second image mark.
Description
The present invention relates to a method of aligning a maskless exposure apparatus.
Flat panel displays such as liquid crystal display (LCD) and organic light emitting display (OLED) are manufactured through a semiconductor process, and various patterns are formed during the process, and an exposure apparatus is used to form such patterns.
The exposure apparatus exposes the object in accordance with the pattern formed on the mask. The pattern transfer mask is formed by forming an exposure pattern on a quartz disc, which is expensive to manufacture. Since a plurality of masks are required in manufacturing a flat panel display, the more masks are used, the higher the cost.
Therefore, in recent years, a maskless exposure apparatus employing a digital mirror device (DMD) has been proposed and used in place of a mask.
The maskless exposure apparatus digitizes a pattern of a previous mask, and drives a DMD according to the digitized pattern information to expose an object.
1 shows a schematic configuration of a maskless exposure apparatus, and FIG. 2 shows a configuration of an exposure unit.
1 and 2 are examples of the
Each
The exposure is performed in a scanning manner, for example, assuming that the
Meanwhile, as illustrated in FIG. 2, each of the
The DMD 200 is a mirror device in which a plurality of unit lenses (for example, 1024 × 768) forming pixels are arranged in a lattice shape, and each unit lens is turned on / off according to input pattern information. The unit lens is configured to transmit light to the
The beam expander 310 adjusts the resolution by expanding the light incident from the DMD 210.
The
The
The
As illustrated in FIG. 1, the
Referring to Figure 3, the alignment method according to the prior art is as follows. Any one of the components constituting the
The first camera C1 shows an image of whether the first align key ak1 and the third align key ak3 are properly aligned at the first coordinates x1 and y2, and the second camera c2. Is an image showing whether the second alignment key ak2 and the fourth alignment key ak4 are properly aligned at the second coordinates x2 and y2.
As described above, the conventional alignment method is performed in the form of grasping the alignment state of the
On the other hand, as the size of the substrate increases, the number of exposure units also increases accordingly. As the number of exposure units increases, one substrate is exposed using a plurality of exposure units.
However, since the maskless exposure apparatus exposes the substrate in units of pattern units (PUs) formed by the
The present invention has been devised in such a background, and is intended to allow easy alignment between the exposure unit and the exposure unit.
One embodiment of the present invention discloses a method of aligning a maskless exposure apparatus composed of a plurality of exposure units including a DMD and an optical system, which method aligns each exposure unit using an alignment key provided in the exposure unit. Aligning, controlling the DMDs of the adjacent first exposure unit and the second exposure unit to display the first image mark by the first exposure unit and the second image mark by the second exposure unit in the overlapped area; And adjusting the alignment of the first exposure unit and the second exposure unit in an aligned state of the displayed first image mark and the second image mark.
Each of the first image mark and the second image mark includes a first unit mark disposed on one side and a second unit mark disposed on the other side, the first unit mark of the first image mark, and The second unit mark of the second image mark is overlaid in the overlap area.
Each of the first unit mark and the second unit mark is composed of a pair of marks arranged in the scanning direction, and the first unit mark has a similar shape in which the second unit mark is enlarged or reduced.
In one embodiment of the present invention, the DMD is controlled so that the first image mark by the first exposure unit and the second image mark by the second exposure unit are superimposed on the overlapping area, thereby easily aligning between the exposure unit and the exposure unit. can do.
1 is a view showing a schematic configuration of a maskless exposure apparatus.
2 is a diagram illustrating a configuration of an exposure unit.
3 is a view for explaining the alignment method according to the prior art.
4 is a view for explaining an arrangement state of an exposure unit and a pattern unit produced by the exposure unit.
5 is a flowchart illustrating an alignment method according to an embodiment of the present invention.
6 is a view for explaining an image mark.
7 is a view for explaining how image marks overlap in an overlapping area.
8 is a diagram illustrating another form of the image mark.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like numbers refer to like elements throughout. In the following description, when it is determined that a detailed description of known functions or configurations related to the present invention may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
4 is a view for explaining an arrangement state of an exposure unit and a pattern unit produced by the exposure unit.
The number of the
As illustrated in FIG. 4, the
Each of the
In the present invention, image marks are formed in regions where the pattern units overlap each other (hereinafter, overlap regions) to align the exposure units.
5 is a flowchart illustrating an alignment method according to an embodiment of the present invention. Hereinafter, the alignment method according to an embodiment of the present invention will be described with reference to FIG. 6.
In step S11, as described above, each of the exposure units is aligned between the
In operation S12, the
The first image mark IM1 is formed in the second area A2 on the right side when the pattern unit PU is divided into two in the scan direction, and the second image mark IM2 is formed in the first area A1 on the left side. Is formed.
The shape of the image mark IM is not particularly limited, but the first image mark IM1 and the second image mark IM2 form a shape in which the shapes merge. For example, if the first image mark IM1 has a rectangular shape, the second image mark IM2 is also rectangular in shape, but the second image mark IM2 is reduced (or enlarged) than the first image mark IM2. It looks like a shape. Alternatively, as shown in FIG. 8, a circular shape may be formed, and two images may be combined in a male and female form, such as concave and convex.
The first image mark IM1 includes at least two unit marks IMa. In this case, the shape of the unit mark IMa constituting the first image mark IM1 may be the same or different as illustrated in FIG. 6. For example, one of the unit marks IMa may have a rectangular shape, and the other may have a circular shape. This unit mark is preferably arranged along the scanning direction. In this way, the unit marks must be arranged along the scanning direction to facilitate alignment between neighboring exposure units.
The second image mark IM2 also includes at least two unit marks IMb. The shape of the unit mark IMb constituting the second image mark IM2 may be the same or different as illustrated in FIG. 6. For example, one of the unit marks IMb may have a rectangular shape and the other may have a circular shape. This unit mark is preferably arranged along the scanning direction. In this way, the unit marks must be arranged along the scanning direction to facilitate alignment between neighboring exposure units.
In addition, like the
FIG. 7 shows the first pattern unit PU1 and the second pattern unit PU2 formed by the
The first pattern unit PU1 includes a second image mark IM2 located in the first area A1, and a first image mark IM2 located in the second area A2. The PU2 also includes a second image mark IM2 located in the first area A1 and a first image mark IM2 located in the second area A2.
The second region A2 of the first pattern unit PU1 overlaps the first region A2 of the second pattern unit PU2 to form an overlap region. In this case, the first image pattern IM1 located in the second area A2 of the first pattern unit PU1 is the second image pattern IM2 located in the first area A1 of the second pattern unit PU2. ) And overlapping areas.
Therefore, when the first image pattern IM1 and the second image pattern IM2 overlap without error in the overlapping area, the
Although the above description has been made in the form of aligning the exposure units through the image obtained by the camera, the photoresist formed on the substrate is patterned after aligning the exposure units as described above, and also through the pattern shape shown in the overlapping region. You can check the alignment status.
Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.
Claims (5)
Aligning each exposure unit using an alignment key provided in the exposure unit;
The first image mark and the second image mark are respectively displayed in the first area and the second area divided into two parts based on the scan direction by controlling the DMD of the exposure unit, respectively. Overlapping a portion of the second region of the exposure unit and the neighboring second exposure unit with each other to generate an overlap region;
Adjusting alignment of the first exposure unit and the second exposure unit in an alignment state of the first image mark of the first exposure unit and the second image mark of the second exposure unit displayed in the overlapping area.
Alignment method of the maskless exposure apparatus comprising a.
The first image mark includes two or more first unit marks arranged in the first area along the scanning direction, and the second image mark includes two or more second unit marks arranged along the scanning direction in the second area. The alignment method of the maskless exposure apparatus containing a unit mark.
And a first unit mark of the first image mark and a second unit mark of the second image mark are overlapped in the overlapping region.
And the first unit mark is a similar shape in which the second unit mark is enlarged or reduced in size.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120142350A KR102020934B1 (en) | 2012-12-07 | 2012-12-07 | Methods for aligning a maskless exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120142350A KR102020934B1 (en) | 2012-12-07 | 2012-12-07 | Methods for aligning a maskless exposure apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20140074124A KR20140074124A (en) | 2014-06-17 |
KR102020934B1 true KR102020934B1 (en) | 2019-09-11 |
Family
ID=51127422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120142350A KR102020934B1 (en) | 2012-12-07 | 2012-12-07 | Methods for aligning a maskless exposure apparatus |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR102020934B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102421913B1 (en) | 2014-12-29 | 2022-07-19 | 삼성디스플레이 주식회사 | Exposure method, exposure device for performing the method and manufacturing method of display substrate using the method |
KR102333285B1 (en) * | 2015-08-20 | 2021-11-30 | 삼성전자주식회사 | Exposure apparatus |
KR102697201B1 (en) * | 2021-09-03 | 2024-08-21 | 주식회사 에스디에이 | Digital Exposure Apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010533310A (en) * | 2007-07-10 | 2010-10-21 | エルジー エレクトロニクス インコーポレイティド | Maskless exposure method |
KR101059811B1 (en) | 2010-05-06 | 2011-08-26 | 삼성전자주식회사 | Maskless exposure apparatus and method of alignment for overlay in maskless exposure |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100213284B1 (en) * | 1996-09-25 | 1999-08-02 | 전주범 | Mask align key design for tma |
KR101349558B1 (en) * | 2007-01-17 | 2014-01-16 | 엘지전자 주식회사 | Maskless exposure apparatus and method for aligning the same |
-
2012
- 2012-12-07 KR KR1020120142350A patent/KR102020934B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010533310A (en) * | 2007-07-10 | 2010-10-21 | エルジー エレクトロニクス インコーポレイティド | Maskless exposure method |
KR101059811B1 (en) | 2010-05-06 | 2011-08-26 | 삼성전자주식회사 | Maskless exposure apparatus and method of alignment for overlay in maskless exposure |
Also Published As
Publication number | Publication date |
---|---|
KR20140074124A (en) | 2014-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7023601B2 (en) | Direct imaging exposure equipment and direct imaging exposure method | |
KR101799860B1 (en) | Masklees exposure device having a spatial filter with the phase shifter-pattern and Method thereof | |
JP4932342B2 (en) | Illumination optical system and projection display device | |
KR102020934B1 (en) | Methods for aligning a maskless exposure apparatus | |
US8072580B2 (en) | Maskless exposure apparatus and method of manufacturing substrate for display using the same | |
JP5842251B2 (en) | Exposure apparatus and exposed material manufacturing method | |
US8477288B2 (en) | Digital exposure method and digital exposure device for performing the method | |
KR102024785B1 (en) | Methods for aligning a maskless exposure apparatus | |
JP4897432B2 (en) | Exposure method and exposure apparatus | |
JP2004146789A (en) | System and method for pattern imaging | |
KR101949389B1 (en) | Method of forming pattern using mask-less exposure equipment | |
US20060194127A1 (en) | Method and apparatus for producing color filter with a line-scan exposure technology by high-speed shutter control | |
JP5760292B2 (en) | Exposure system using microlens array | |
JP5704535B2 (en) | Exposure system using microlens array | |
CN102117015A (en) | Maskless lithography device adopting digital phase shift and method thereof | |
JP7196271B2 (en) | Direct imaging exposure apparatus and direct imaging exposure method | |
JP6142517B2 (en) | Projection exposure apparatus and projection exposure method | |
US8233141B2 (en) | Shutter pixel, shutter structure including the shutter pixel, and exposure apparatus including the shutter structure | |
JP2009265535A (en) | Method for forming microlens, method for optimizing alignment mark, method for manufacturing solid-state imaging device and electronic information device | |
JP5747305B2 (en) | Exposure apparatus and microlens array structure | |
JP2010122619A (en) | Pattern drawing device, pattern drawing method and mask for pattern drawing | |
JP2005352142A (en) | Method for manufacturing optical element array and mask for lithography | |
KR20150103774A (en) | Digital exposure method and digital exposure device for performing the same | |
JP2008060363A (en) | Photomask, and exposure equipment | |
JP2013054315A (en) | Exposure device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |