KR102016480B1 - Vacuum molding apparatus, substrate proecssing system having the same and substrate proecssing method using the same - Google Patents

Vacuum molding apparatus, substrate proecssing system having the same and substrate proecssing method using the same Download PDF

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KR102016480B1
KR102016480B1 KR1020140033608A KR20140033608A KR102016480B1 KR 102016480 B1 KR102016480 B1 KR 102016480B1 KR 1020140033608 A KR1020140033608 A KR 1020140033608A KR 20140033608 A KR20140033608 A KR 20140033608A KR 102016480 B1 KR102016480 B1 KR 102016480B1
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substrate
vacuum
unit
warpage
heat
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KR1020140033608A
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KR20150109957A (en
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허광민
정경민
조동규
오재욱
박석현
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삼성전기주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

Substrate processing system according to an embodiment of the present invention is to measure the warp value for a plurality of units of a substrate including a plurality of warpage measuring device; An injector for injecting a substrate including a plurality of units therein; A vacuum molding machine for molding the substrate fed into the feeder for each unit by referring to the warpage values of the plurality of units measured by the warpage measuring device; a paste printer for printing solder paste on the substrate formed by the vacuum molding machine; A mounter for mounting an electronic device on the substrate on which the solder paste is printed; And a reflower for reflowing the substrate on which the electronic device is mounted. As a result, a limited warpage (CAW) of the substrate may be formed to improve the warpage (CAW) distribution of the substrate, thereby improving bonding reliability and mounting yield between the chip die and the bump of the substrate.

Description

Vacuum molding machine, substrate processing system having the same and substrate processing method using the same {VACUUM MOLDING APPARATUS, SUBSTRATE PROECSSING SYSTEM HAVING THE SAME AND SUBSTRATE PROECSSING METHOD USING THE SAME}

The present invention relates to a vacuum molding machine, a substrate processing system having the same, and a substrate processing method using the same.

With the trend toward miniaturization, light weight, and multifunctionality of electronic devices, the degree of integration of substrates and electronic devices mounted thereon is rapidly increasing. Substrates are increasingly multilayered, and wiring patterns formed on the substrate are also densified. In addition, electronic devices are becoming more integrated and smaller in size.

In particular, in the circuit forming technique of various methods for improving the characteristics of the product in the development of the printed circuit board (PCB) industry, the silicon die (Si- Die) attached to the printed circuit board also has high performance, As it is becoming highly functional, it is expected to be developed as a core technology of the printed circuit board business.

Flip chip technology has been used as a method of contacting a silicon die on a printed circuit board. Among them, there is a controlled collapse chip connection (C4) method. Here, the reliability of the collapse control type chip interconnect is an important factor for improving the product reliability of the chips on the substrate.

The good connection between the chip and the printed circuit board can improve the reliability of the product. The printed circuit board receives heat and provides heat through each process of build-up to have an interlayer structure. The received printed circuit board can be expanded. This interlayer structure has a significant influence on warpage of the product due to the thickness and shape of residual copper (Cu).

As such, the chip is mounted on the printed circuit board through a flip chip process. In this case, in the flip chip process, a high temperature working condition of 150 ° C. or more may cause a rise in the coefficient of thermal expansion (CTE) of the material. The expanded printed circuit board is formed in a concave-convex shape (convex, concave) or the like, and the chip is mounted on the concave-convex shape. The area where the chip die and the bump of the printed circuit board are connected is referred to as a collapse control type chip connection area (C4 Area).

The difference in the residual ratio of the collapse-controlled chip connection area (C4 Area) causes a difference in the thickness of the insulating layer, and the mismatch between the coefficients of thermal expansion (CTE) of the front and back sides is caused by the difference in thickness. -match). This eventually leads to a C4 Area Warpage (CAW) of the collapse controlled chip connection area.

In other words, a mismatch in the coefficient of thermal expansion between the printed circuit board and the chip can produce stresses during the thermal process, which in turn results in chip-level cracking and film lamination. may result in delamination.

As such, when the shape of the chip die and the shape of the bump area of the printed circuit board are formed in opposite directions, the assembly may not be performed properly. May occur.

Therefore, this phenomenon may be a cause of deterioration of the mounting yield of the die assembly process.

At this time, the substrate is vacuum molded in order to improve the yield of the die assembly. Therefore, when the shapes of the chip die and the printed circuit board are different from each other, a problem of die misalignment is caused, and the vacuum molding of the substrate is performed to improve the problem.

The advantage of the substrate forming method is to improve the bonding reliability and mounting yield between the substrate and the chip die by molding the substrate to the die shape (die shape).

However, due to the copper thickness, the shape of the circuit, the thickness of the insulating layer, and the like, the same warpage of the collapse-controlled chip connection area (C4 Area Warpage; CAW, hereinafter referred to as "warpage") may not all be the same. . In other words, even if the substrate is molded at the same pressure by the copper (Cu) thickness, the insulation layer thickness, the shape, and the like, there is a problem in that the molding cannot be performed with the same warpage (CAW) value. These non-uniform warpage (CAW) values cause deterioration in substrate fabrication yield, which in turn degrades die area bonding reliability and yield in the assembly process.

Therefore, in order to improve the bonding reliability of the chip die and the printed circuit board and the yield of the assembly, it is necessary to improve the distribution of the warpage (CAW), that is, the distribution of the warpage.

Japanese Laid-Open Patent Publication No. 2006-173344

Accordingly, in the present invention, it is confirmed that the bonding reliability and the mounting yield of the chip die and the substrate are improved by controlling the warpage of the substrate (CAW) in the substrate processing system by unit to improve the dispersion of the warpage (CAW) of the substrate. Was completed.

Accordingly, one aspect of the present invention is to provide a substrate processing system capable of controlling the warpage distribution of a substrate on a unit-by-unit basis to improve bonding reliability and mounting yield.

Another aspect of the present invention is to control the deflection dispersion for each unit to freely form the shape of the warpage (CAW) of the substrate to improve the warpage dispersion of the substrate, and the shape of irregularities and flat shapes (concave, convex, flat), etc. The present invention provides a vacuum molding machine capable of forming without limitation.

Another aspect of the present invention to provide a substrate processing method that can improve the production yield of the assembly substrate using a vacuum molding machine and a substrate processing system including the same.

One aspect of the present invention for achieving the above object is a warpage measuring device for measuring the warp value for a plurality of units of a substrate including a plurality of units; An injector for injecting a substrate including a plurality of units therein; A vacuum molding machine for molding the substrate fed into the feeder for each unit by referring to the warpage values of the plurality of units measured by the warpage measuring device; A paste printer for printing solder paste onto the substrate formed by the vacuum molding machine; A mounter for mounting an electronic device on the substrate on which the solder paste is printed; And a reflower for reflowing the substrate on which the electronic device is mounted.

In addition, the warpage measuring device of one side of the present invention photographs a substrate to obtain a photographed image; And a measurement unit for measuring the warp value for each unit from the photographed image generated by the camera.

In addition, the vacuum molding machine of one side of the present invention a heating unit for providing heat to the substrate; And a vacuum unit configured to provide a vacuum force to the substrate for each unit to form the warpage of the substrate.

In addition, the heating portion of one side of the present invention a plurality of injectors formed in a position corresponding to each unit; A plurality of heat generators for generating heat and providing it to a corresponding injector to heat the corresponding unit; And a heat driver for generating heat by controlling the heat generator.

In addition, the heat driver of one side of the present invention individually controls the plurality of heat generators so that heat is provided in proportion to the warpage value with reference to the unit warpage provided by the warpage meter.

In addition, the vacuum portion of one side of the present invention a base mold; A partition wall that partitions an area of the base mold and supports the substrate; A plurality of inhalers disposed in the vacuum region partitioned by the partition wall and formed into a pupil; A plurality of vacuum pumps respectively installed in the plurality of inhalers and configured to suck the vacuum by unit; And a vacuum controller capable of driving each vacuum pump individually.

In addition, the vacuum controller of one side of the present invention receives a plurality of unit-specific warp values for the substrate from the warpage measuring unit to be vacuum suction individually for each unit of the substrate by a plurality of inhalers at a vacuum pressure according to the input warpage value The vacuum pumps are driven individually.

On the other hand, another aspect of the invention the heating unit for providing heat to the substrate; And a vacuum unit configured to provide a vacuum pressure per unit to the substrate to form the warpage of the substrate.

In addition, the heating unit of the other side of the present invention a plurality of injectors formed in a position corresponding to each unit; A plurality of heat generators for generating heat and providing it to a corresponding injector to heat the corresponding unit; And a heat driver for generating heat by controlling the heat generator.

Further, the heat driver of another aspect of the present invention individually controls the plurality of heat generators so that heat is provided in proportion to the warpage value with reference to the unit warpage value provided in the warpage meter.

In addition, the vacuum portion of another aspect of the present invention; A partition wall that partitions an area of the base mold and supports the substrate; A plurality of inhalers disposed in the vacuum region partitioned by the partition wall and formed into a pupil; A plurality of vacuum pumps respectively installed in the plurality of inhalers and configured to suck the vacuum by unit; And a vacuum controller capable of driving each vacuum pump individually.

In addition, the vacuum controller according to another aspect of the present invention receives a plurality of unit-specific warpage values for the substrate from the warpage measuring device to be vacuum suction individually for each unit of the substrate by a plurality of inhalers with a vacuum pressure according to the input warpage value The vacuum pumps are driven individually.

On the other hand, another aspect of the present invention comprises the steps of (A) the warpage measuring unit for each warp value of the substrate; (B) a feeder inserting the substrate into the vacuum molding machine; (C) performing a unit-by-unit molding on the substrate by a vacuum molding machine; (D) a paste printer printing solder paste on the substrate; (E) a mounter mounting the electronic device on the substrate; And (F) a reflower performing reflow on the substrate.

In addition, the step (C) of another aspect of the present invention comprises the steps of (C-1) the vacuum molding machine to provide heat to the substrate; And (C-2) a vacuum molding machine to provide a vacuum pressure per unit to the substrate to form the warpage of the substrate.

Further, in the step (E) of another aspect of the present invention, the electronic device is mounted on the solder paste.

Further, in the step (F) of another aspect of the present invention, heat is applied to the substrate and the solder paste to bond the substrate and the electronic device.

The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings.

Prior to this, the terms or words used in the present specification and claims should not be interpreted in the ordinary and dictionary sense, and the inventors may appropriately define the concept of terms in order to best describe their own invention. Based on the principle, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention.

Vacuum molding machine and substrate processing system according to an embodiment of the present invention, the substrate processing method using the same by forming a limited warpage (CAW) of the unit by unit to improve the warpage (CAW) distribution of the substrate to bond between the chip die and the bump of the substrate The reliability and mounting yield can be improved.

The features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

1 is an exemplary view showing a substrate processing system according to an embodiment of the present invention.
FIG. 2 is a configuration diagram of the warpage measuring device of FIG. 1.
3A is a view showing the shape of the substrate and the chip formed through the substrate system according to the first embodiment of the present invention, Figure 3b is a view showing the shape of the substrate and chip according to Comparative Example 1 of the present invention.
4 is a cross-sectional view of a vacuum molding machine according to an embodiment of the present invention.
5 is a plan view of a vacuum unit according to an embodiment of the present invention.
6 is an enlarged view according to A of FIG. 4.
FIG. 7 is a cross-sectional view taken along line II ′ of FIG. 5.
Figure 8a is an embodiment of a substrate molded with a vacuum molding machine according to the present invention, Figure 8b is an embodiment of a substrate according to the prior art.
9 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.

Before describing the invention in more detail, the terms or words used in the specification and claims are not to be limited to their usual or dictionary meanings, and the concept of terms is appropriately described to best explain the invention. It should be interpreted as meanings and concepts in accordance with the technical spirit of the present invention based on the principle that it can be defined. Therefore, the configuration of the embodiments described herein is only one preferred example of the present invention, and does not represent all of the technical idea of the present invention, various equivalents and modifications that can replace them at the time of the present application It should be understood that there may be

Hereinafter, preferred embodiments of the present invention will be described in detail so that those skilled in the art may easily implement the present invention. In addition, in the description of the present invention, detailed descriptions of related well-known technologies that may unnecessarily obscure the subject matter of the present invention will be omitted.

1 is an exemplary view showing a substrate processing system according to an embodiment of the present invention. FIG. 2 is a configuration diagram of the warpage measuring instrument of FIG. 1, and FIG. 3 is a detailed configuration diagram of the vacuum molding machine of FIG. 1.

Referring to FIG. 1, the substrate processing system 1 includes a warpage measuring device 10, an input machine 20, a vacuum molding machine 30, a paste printing machine 50, a mounting machine 60, a reflow machine 70, and a receiving unit. Group 80.

The warpage measuring device 10 acquires a photographed image by photographing a substrate provided with a plurality of units with a camera, and measures a warp value for each unit using the obtained photographed image.

The warpage measuring device 10 includes a camera 11 for capturing a photographed image by photographing the substrate 2 as illustrated in FIG. 2, and a measuring unit 12 measuring a warp value for each unit from the generated photographed image. have.

Techniques for measuring the warpage value from the photographed image by the measurement unit 12 are already well known and the disclosed technique is applicable to the present invention.

Meanwhile, the injector 20 may inject a substrate into the substrate processing system 10. For example, the injector 20 may be a robot arm, a conveyor, a roller, or the like. However, the type of the injector 20 is not limited thereto, and any one capable of transferring an external substrate into the substrate processing system 10 may be possible. In embodiments of the invention the substrate may comprise a plurality of units. The unit may be a conventional printed circuit board.

The vacuum molding machine 30 may perform molding of a substrate, and for this purpose, includes a vacuum unit 350 and a heating unit 310. Subsequently, the substrate and the chip may be mounted, and the substrate or the chip may be warped during the formation process, thereby causing problems in attaching to each other. Thus, the bumps of the chip and the substrate are molded to have the same directivity to facilitate mounting between the chip and the substrate by using the vacuum molding machine 30 for molding the substrate.

Referring to FIGS. 3A and 3B to describe this in more detail, warpage of the substrate may occur while the substrate 2 is provided with heat during a build-up process. . The residual ratios of the front side and the back side of the substrate 2 are different from each other, so that the content of the insulating material filling the conductive layer is different. This difference in insulator content may eventually lead to a difference in the coefficient of thermal expansion (CTE). In addition, the difference in the coefficient of thermal expansion (CTE) at high temperature is increased even more. Since the flip chip method is often performed at a high temperature, the warpage of the substrate 2 becomes worse while the material undergoes shrinkage expansion. Can be.

The bending direction of the substrate 2 generated in this way should be formed in the same direction as the chip die 3 to facilitate the mounting. That is, as shown in FIG. 3A, an important factor in mounting the chip die 3 to the substrate 2 is to have a constant directionality of the shape between the bump 3-1 of the chip and the bump 2-1 of the substrate. will be. However, as shown in FIG. 3B, when the bumps 3-1 of the chip and the bumps 2-1 of the substrate have opposite directions from each other, defects may occur due to a high probability of cracking and peeling in mounting the bumps. . Therefore, the bumps 3-1 of the chip and the bumps 2-1 of the substrate must have the same direction to improve the mounting yield and the bonding reliability in the assembly process.

In this manner, molding is performed by vacuum suction of the substrate 2 using the vacuum unit 350 of the vacuum molding machine 30 so that the bump 3-1 of the chip and the bump 2-1 of the substrate coincide with each other. Can be done.

In addition, the vacuum molding machine 30 may heat the substrate 2 using the heating unit 310 when forming the vacuum by suction of the substrate 2. In addition, the vacuum molding machine 30 may further include an infrared heater (not shown) in the vacuum unit 350, and simultaneously heat the energy supplied from the infrared heater to the substrate 2 and the vacuum provided from the vacuum unit 350. It can be provided to bend the substrate 2 in one direction.

The heating unit 310 may heat the substrate. Therefore, the substrate 2 may be bent well by the heating unit 310. In other words, hard polymer materials are hard at low temperatures but soft at high temperatures like rubber. can do. In addition, heat treatment above the glass transition temperature can reduce the plastic deformation time of the material. As such, the vacuum molding machine 30 may be bent in one direction by vacuum suction of the substrate 2 while providing heat to the substrate 2. In addition, the vacuum molding machine 30 may include a heating unit 310 and an infrared heater of the vacuum unit 350 to provide thermal energy to the substrate 2 up and down to maintain a stable molding temperature.

As such, the vacuum molding machine 30 according to the embodiment of the present invention may improve the degree of bending of the substrate and the reliability of the region by adjusting a temperature range in which heat is applied to a temperature at which the substrate can be molded.

The vacuum molding machine 30 controls the dispersion of the substrate warpage by adjusting the warpage of the substrate for each unit. The substrate is formed by the vacuum molding machine 30, the substrate to be molded is bent by the vacuum. In this case, even if the substrate is the same product, it is difficult to control the degree of bending under vacuum due to various reasons such as a residual rate, a heating temperature, an insulator thickness, and an insulator shape. That is, the difference of the warpage of a board | substrate is high, that is, the area | region where it is hard to mount well and the area which is not mounted also exist in the same board | substrate because a high warpage dispersion | variation is high. This may soon lead to a drop in mounting yield.

For this reason, the vacuum molding machine 30 may control the deflection distribution of the substrate by adjusting the degree to which the substrate is bent. A detailed description of the vacuum molding machine 30 will be described with reference to FIGS. 4 to 8.

The paste printer 50 may print solder paste on the substrate 2. The paste printer 50 may position the mask having the opening patterned on the substrate 2 introduced into the substrate processing system 1. Here, the opening may be formed at a position corresponding to the bump formed later. The paste printer 50 may apply solder paste on the mask to print the solder paste on the substrate through the opening of the mask.

The mounter 60 may mount an electronic device on the substrate 2. The mounter 60 may mount the electronic device on a region where the solder paste is printed on the substrate. The electronic device may be, for example, a chip die 3.

The reflower 70 may perform reflow on the substrate. The reflower 70 may heat and melt a solder paste printed on a substrate. For example, the reflower 70 may heat the solder paste with hot air. As the solder paste is melted by the reflow unit 70 as described above, adhesion between the solder paste and the electronic device may be increased.

The receiver 80 can receive a substrate. The receiver 80 may be formed to be bent in one direction by the vacuum molding machine 30, and may receive a substrate including a unit in which an electronic device is mounted.

As described above, the substrate processing system 1 controls the degree of warpage of the substrate for each unit by using the vacuum molding machine 30 including the heating part 310 and the vacuum part 350 to match the warpage direction of the chip die and the substrate. The ease of joining can be ensured to improve the joining reliability and the mounting yield.

4 to 8 are exemplary views showing a vacuum molding machine according to an embodiment of the present invention. 4 is a cross-sectional view of a vacuum molding machine according to an embodiment of the present invention, FIG. 5 is a plan view of a vacuum unit according to an embodiment of the present invention, FIG. 6 is an enlarged view according to A of FIG. 5, and FIG. 7 is FIG. 6. It is sectional drawing according to II '. 8A is an embodiment of a substrate molded with a vacuum molding machine according to the present invention, and FIG. 8B is an embodiment of a substrate according to the prior art.

Referring to FIG. 4, the vacuum molding machine 30 may include a heating unit 310 formed on one surface and a vacuum unit 350 formed on the other surface with the substrate 2 therebetween.

The heating unit 310 may be formed above or below the vacuum molding machine 30. For example, the substrate 2 may be aligned on the heating unit 310. The heating unit 310 may provide heat to the substrate 2.

The heating unit 310 may apply heat to the units formed on the substrate 2, respectively. The heating unit 310 may adjust the range of applying heat to the unit. According to an embodiment of the present disclosure, the heating unit 310 may include a plurality of injectors 312 each corresponding to a unit, a plurality of heat generators 314, and a heat driver 316.

The plurality of injectors 312 correspond to each unit to provide heat generated by the heat generator 314 to the corresponding unit.

The plurality of heat generators 314 generates and outputs heat under the control of the heat driver 316.

The heat driver 316 may control the heat generator 314 to generate heat. In this case, the heat driver 316 may drive all of the heat generators 314 in the same manner, but in contrast, the heat driver 316 provides a large amount of heat to a unit having a large amount of deflection by referring to the unit-specific warpage value provided by the warpage measuring device 10. Units without this will provide less heat, allowing for easier bending control.

The vacuum unit 350 may be formed at an upper portion or a lower portion of the vacuum molding machine 30 and may be disposed at positions corresponding to each other with the heating unit 310. The vacuum unit 350 may further include an infrared heater to maintain a stable molding temperature. The vacuum unit 350 may include a plurality of inhalers 352 corresponding to each unit, and the plurality of inhalers 352 may be formed by vacuum suction of each unit with respect to the substrate 2. In addition, the vacuum unit 350 is installed in the plurality of inhalers 352 and includes a plurality of vacuum pumps 354 for vacuum suction for each unit. In addition, the vacuum unit 350 is provided with a vacuum controller 356 capable of driving each vacuum pump 354 individually.

The vacuum controller 356 receives a warpage value distinguished for each unit of the substrate from the warpage meter 10 so that the unit of the substrate is vacuum sucked by the inhaler 352 at a vacuum pressure according to the warpage value. Drives separately.

In this case, when the vacuum controller 356 drives the vacuum pump 354, for example, the vacuum pump 354 may be controlled and driven to generate a vacuum pressure corresponding to the bending value as shown in Table 1 below.

NO Deflection value (um) Pressure (kpa) One Less than -50um 0 2 -40 ~ -30um 10 3 -30 ~ -20um 20 4 -20 ~ -10um 30 5 -10 ~ 0um 40 6 0 ~ 10um 50 7 10 ~ 20um 60 8 20-30um 70 9 30 ~ 40um 80 10 40 ~ 50um 90

In this case, the substrate 2 may be heated to a temperature at which the substrate 2 may be molded by the heating unit 310. When the unit is vacuum sucked by the plurality of inhalers 352, the unit may be shaped to be bent in one direction.

Meanwhile, referring to FIGS. 5 to 7, the vacuum part 350 of the vacuum molding machine 30 is provided with a base mold 410, and a partition 430 partitioning the base mold 410 is provided. The partition 430 may be integrally formed with the base mold 410. The barrier rib 430 may be formed in a direction perpendicular to the surface direction of the base mold 410, and an upper portion of the barrier rib 430 may be a surface supporting the substrate 2.

The barrier rib 430 is disposed at predetermined intervals to form a vacuum region 420 formed of cavity formed between the barrier ribs 430. The vacuum region 420 formed by the pupil may be formed in a shape corresponding to the unit unit of the substrate. Therefore, the shape of the pupil may be determined according to the arrangement of the partition wall 430. That is, the shape of the vacuum region 420 is determined according to the arrangement of the partition wall 430. In other words, the shape of the partition wall 430 may be arranged according to the size of the unit substrate. Alternatively, the partition wall 430 may be disposed by dividing the partition wall 430 into quarters in a total size using a quad method.

An inhaler 352 of the vacuum machine 350 is disposed in the vacuum area 420. The inhaler 352 may form a vacuum in the vacuum region 420 to pull the substrate 2 to form the substrate 2.

As described above, when the inhaler 352 forms a vacuum in the vacuum region 420 for each unit and pulls the substrate 2 to form the substrate 2, as shown in FIG. Dispersion may be improved or formed uniformly.

This figure of FIG. 8A shows that the dispersion of curvature is large compared with FIG. 8B which shows the degree of curvature of the board | substrate with respect to the prior art which vacuum-suctions the same for all the units of the board | substrate 2. FIG.

That is, in FIG. 8B, a large gap between a and b is formed, which indicates that a large deflection dispersion of the substrate is formed. As a result, when the chip die is mounted on the substrate, deterioration in bonding reliability and mounting yield can occur.

As such, in forming the substrate 2 according to the present invention of FIG. 8A, the vacuum machine 350 may control the warpage of the substrate by controlling the warpage of the substrate for each unit. Therefore, the vacuum forming unit 30 according to the present invention can improve the bonding reliability and the mounting yield in mounting the chip die on the substrate 2 by controlling the degree of warpage of the substrate.

9 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. Here, the description will be made with reference to FIGS. 1 to 7 to avoid redundant description.

Referring to FIG. 9, first, a substrate having a plurality of units is photographed with a camera to obtain a photographed image by using a warpage measurer, and a warp value is measured for each unit using the obtained photographed image (S100).

In more detail, the warpage measuring device includes a camera for capturing a photographed image by photographing the substrate 2 and a measuring unit measuring a warp value for each unit from the generated photographed image as shown in FIG. 2.

When the camera captures a substrate and acquires an image in the bending measuring device having the above configuration, the measurement unit measures and outputs a warping value for each unit from the generated captured image.

Next, an injector may inject the substrate into the substrate processing system (S810). Here, the substrate processing system may be a system for mounting an electronic device on the substrate and receiving the substrate. A detailed configuration of the substrate processing system will be described with reference to FIG. 1. The substrate may be introduced into the substrate by an injector. The feeder may be a robot arm, a conveyor, a roller, or the like.

Subsequently, the substrate processing system may perform molding for each substrate on a substrate (S120). Unit-by-unit molding of the substrate may be performed via a vacuum molding machine.

Here, the heating unit of the vacuum molding machine may provide thermal energy to the substrate, and the vacuum unit may provide thermal energy to the infrared heater to stably maintain the substrate forming temperature. For example, the heating unit may provide thermal energy of 200 ° C. to 220 ° C. to the substrate, and the infrared heater may provide thermal energy at 90 ° C. to 110 ° C. to stably maintain the molding temperature of the substrate.

The substrate molding can be performed by a vacuum unit formed in the vacuum molding machine. The vacuum unit provided in the vacuum molding machine can control the dispersion of the warpage of the substrate, and the suction unit of the vacuum machine is disposed in the vacuum region. The inhaler forms a vacuum in the vacuum region to pull the substrate to form the substrate.

As described above, when the inhaler forms a vacuum in the vacuum region for each unit and pulls the substrate to form the substrate, as shown in FIG. 8A, the degree of warpage of the substrate, that is, the dispersion of the warpage of the substrate may be improved or uniformly formed.

Such molding of the substrate is performed in order to facilitate mounting by matching the die with the chip die. For example, in the process of building up the substrate, the substrate may be bent in any direction due to the difference in copper density between the upper and lower portions. Here, the bending direction of a board | substrate can be made the same with the bending direction of a chip | tip and a board | substrate by shape | molding a board | substrate through a vacuum molding machine. The chip die mounted on the substrate may be, for example, an inductor as an electronic component.

Subsequently, the substrate processing system may print solder paste on the substrate (S130). Solder paste printing may be performed by a paste printer. The paste printing machine may position a mask having an opening patterned on the substrate. The opening may be formed at a position corresponding to a bump formed later. The paste printer may apply solder paste on top of the mask to print the solder paste on the substrate through the openings of the mask.

Subsequently, the substrate processing system may mount the electronic device on the substrate (S14). The mounting of the electronic device may be performed by the mounter. The mounter may mount the electronic device in the region where the solder paste is printed on the upper portion of the substrate.

Subsequently, the substrate processing system may perform reflow (S150). Reflow can be performed through a reflower. The reflower can heat and melt the solder paste printed on the substrate. For example, the reflow machine may heat the solder paste with hot air, but is not limited thereto. The reflower can use any heat transfer medium that can melt solder paste as well as hot air. As the solder paste is melted by the reflower as described above, adhesion to an electronic device mounted on the solder paste may be increased.

Substrate processing method according to an embodiment of the present invention to improve the bonding reliability and mounting yield between the chip die and the bump of the substrate by improving the warpage (CAW) of the substrate by forming a limited warpage (CAW) of the substrate through a vacuum molding machine Can be.

Although the present invention has been described in detail through specific examples, it is intended to describe the present invention in detail, and the present invention is not limited thereto, and it should be understood by those skilled in the art within the technical spirit of the present invention. It is obvious that modifications and improvements are possible.

All modifications and variations of the present invention fall within the scope of the present invention, and the specific scope of protection of the present invention will be apparent from the appended claims.

1 substrate processing system 2 substrate
10: warpage measuring instrument 20: feeder
30: vacuum forming machine 40: paste printing machine
60: mounting machine 70: reflow machine
80: receiver 310: heating unit
350: vacuum portion 410: base mold
420: vacuum area 430: partition wall

Claims (16)

A warpage measurer for measuring warpage values for the plurality of units of a substrate including a plurality of units;
An injector for injecting a substrate including a plurality of units therein;
A vacuum molding machine for molding the substrate fed into the feeder for each unit by referring to the warpage values of the plurality of units measured by the warpage measuring device;
A paste printer for printing solder paste onto the substrate formed by the vacuum molding machine;
A mounter for mounting an electronic device on the substrate on which the solder paste is printed; And
And a reflower configured to reflow the substrate on which the electronic device is mounted. The method according to claim 1,
The warpage measuring device
A camera photographing a substrate to obtain a photographed image; And
And a measurement unit for measuring a warp value for each unit from the photographed image generated by the camera. The method according to claim 1,
The vacuum molding machine
A heating unit providing heat to the substrate; And
And a vacuum unit configured to provide a vacuum force per unit to the substrate to form a warpage of the substrate. The method according to claim 3,
The heating unit
A plurality of injectors formed at positions corresponding to each unit;
A plurality of heat generators for generating heat and providing it to a corresponding injector to heat the corresponding unit; And
And a heat driver to control the heat generator to generate heat. The method according to claim 4,
And the heat driver individually controls the plurality of heat generators to provide heat in proportion to the warpage value with reference to the unit warpage provided by the warpage meter. The method according to claim 3,
The vacuum unit
Base mold;
A partition wall that partitions an area of the base mold and supports the substrate;
A plurality of inhalers disposed in a vacuum region partitioned by the partition wall and formed into a pupil;
A plurality of vacuum pumps respectively installed in the plurality of inhalers and configured to suck the vacuum by unit; And
A substrate processing system comprising a vacuum controller capable of driving each vacuum pump individually. The method according to claim 6,
The vacuum controller is a substrate for driving a plurality of vacuum pumps individually so that the vacuum suction according to the unit of the substrate by a plurality of inhalers with a vacuum pressure according to the input warpage value received from the warpage measuring unit for each substrate from the warpage measuring device Processing system. delete delete delete delete delete (A) the warpage measuring unit to measure the warp value per unit of the substrate;
(B) a feeder inserting the substrate into the vacuum molding machine;
(C) performing a unit-by-unit molding on the substrate by a vacuum molding machine;
(D) a paste printer printing solder paste on the substrate;
(E) mounting the electronic device on the substrate; And
(F) a reflower performing reflow on the substrate. The method according to claim 13,
Step (C) is
(C-1) providing a heat to the substrate by a vacuum molding machine; And
(C-2) A vacuum processing method comprising the step of forming a warp of the substrate by providing a vacuum pressure per unit unit to the substrate. The method according to claim 13,
In the step (E), the electronic device is mounted on the solder paste. The method according to claim 13,
A substrate processing method for bonding the substrate and the electronic device by applying heat to the substrate and the solder paste in the step (F).
KR1020140033608A 2014-03-21 2014-03-21 Vacuum molding apparatus, substrate proecssing system having the same and substrate proecssing method using the same KR102016480B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004259921A (en) * 2003-02-26 2004-09-16 Seiko Epson Corp Circuit board, semiconductor device, semiconductor production system, method for producing circuit board and method for fabricating semiconductor device
JP2006202783A (en) * 2005-01-17 2006-08-03 Fujitsu Ltd Process for manufacturing semiconductor device

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Publication number Priority date Publication date Assignee Title
JPH09251948A (en) * 1996-03-18 1997-09-22 Fujitsu Ltd Apparatus and method for flatness correction
JP4600655B2 (en) 2004-12-15 2010-12-15 セイコーエプソン株式会社 Substrate holding method
JP4899879B2 (en) * 2007-01-17 2012-03-21 東京エレクトロン株式会社 Substrate processing apparatus, substrate processing method, and storage medium

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004259921A (en) * 2003-02-26 2004-09-16 Seiko Epson Corp Circuit board, semiconductor device, semiconductor production system, method for producing circuit board and method for fabricating semiconductor device
JP2006202783A (en) * 2005-01-17 2006-08-03 Fujitsu Ltd Process for manufacturing semiconductor device

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