KR102005083B1 - 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템 - Google Patents

하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템 Download PDF

Info

Publication number
KR102005083B1
KR102005083B1 KR1020187034228A KR20187034228A KR102005083B1 KR 102005083 B1 KR102005083 B1 KR 102005083B1 KR 1020187034228 A KR1020187034228 A KR 1020187034228A KR 20187034228 A KR20187034228 A KR 20187034228A KR 102005083 B1 KR102005083 B1 KR 102005083B1
Authority
KR
South Korea
Prior art keywords
shots
pattern
dose
charged particle
shot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187034228A
Other languages
English (en)
Korean (ko)
Other versions
KR20180128525A (ko
Inventor
아키라 후지무라
헤롤드 로버트 자블
Original Assignee
디2에스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/037,263 external-priority patent/US20120221985A1/en
Priority claimed from US13/329,314 external-priority patent/US20120217421A1/en
Priority claimed from US13/329,315 external-priority patent/US20120219886A1/en
Application filed by 디2에스, 인코포레이티드 filed Critical 디2에스, 인코포레이티드
Publication of KR20180128525A publication Critical patent/KR20180128525A/ko
Application granted granted Critical
Publication of KR102005083B1 publication Critical patent/KR102005083B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H10P76/2045—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020187034228A 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템 Active KR102005083B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13/037,263 US20120221985A1 (en) 2011-02-28 2011-02-28 Method and system for design of a surface to be manufactured using charged particle beam lithography
US13/037,263 2011-02-28
US13/329,314 US20120217421A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with overlapping shots
US13/329,314 2011-12-18
US13/329,315 2011-12-18
US13/329,315 US20120219886A1 (en) 2011-02-28 2011-12-18 Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
PCT/US2012/025149 WO2012118616A2 (en) 2011-02-28 2012-02-15 Method and system for forming patterns using charged particle beam lithography

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020137022194A Division KR20140015340A (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템

Publications (2)

Publication Number Publication Date
KR20180128525A KR20180128525A (ko) 2018-12-03
KR102005083B1 true KR102005083B1 (ko) 2019-07-29

Family

ID=46758421

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187034228A Active KR102005083B1 (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템
KR1020137022194A Ceased KR20140015340A (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137022194A Ceased KR20140015340A (ko) 2011-02-28 2012-02-15 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템

Country Status (4)

Country Link
EP (1) EP2681760A4 (enExample)
JP (1) JP6140082B2 (enExample)
KR (2) KR102005083B1 (enExample)
WO (1) WO2012118616A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6057635B2 (ja) * 2012-09-14 2017-01-11 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN105717748B (zh) * 2014-12-04 2017-12-29 上海微电子装备（集团）股份有限公司 一种背面曝光工艺优化方法
JP6577787B2 (ja) * 2015-08-11 2019-09-18 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10444629B2 (en) 2016-06-28 2019-10-15 D2S, Inc. Bias correction for lithography
EP3355337B8 (en) * 2017-01-27 2024-04-10 IMS Nanofabrication GmbH Advanced dose-level quantization for multibeam-writers
JP7094782B2 (ja) * 2018-06-01 2022-07-04 株式会社ニューフレアテクノロジー 電子ビーム検査装置及び電子ビーム検査方法
US11604451B2 (en) 2018-12-22 2023-03-14 D2S, Inc. Method and system of reducing charged particle beam write time
US10884395B2 (en) * 2018-12-22 2021-01-05 D2S, Inc. Method and system of reducing charged particle beam write time
US20230124768A1 (en) 2019-05-24 2023-04-20 D2S, Inc. Method and system for determining a charged particle beam exposure for a local pattern density

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264711A (en) * 1979-12-10 1981-04-28 Burroughs Corporation Method of compensating for proximity effects in electron-beam lithography
JP5001563B2 (ja) * 2006-03-08 2012-08-15 株式会社ニューフレアテクノロジー 荷電粒子線描画データの作成方法
US8057970B2 (en) * 2008-09-01 2011-11-15 D2S, Inc. Method and system for forming circular patterns on a surface
TWI506672B (zh) * 2008-09-01 2015-11-01 D2S Inc 用於在表面碎化及形成圓形圖案與用於製造半導體裝置之方法
US7799489B2 (en) * 2008-09-01 2010-09-21 D2S, Inc. Method for design and manufacture of a reticle using variable shaped beam lithography
US7901850B2 (en) * 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
KR101646909B1 (ko) * 2010-08-19 2016-08-09 삼성전자주식회사 반도체 소자 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Christophe Pierrat 외 1명, ‘Impact of Model-Based Fracturing on E-beam Proximity Effect Correction Methodology’, Proc. of SPIE, Vol. 7823, 782313.(2010.09.30.)*

Also Published As

Publication number Publication date
JP2014512670A (ja) 2014-05-22
WO2012118616A3 (en) 2012-12-06
WO2012118616A2 (en) 2012-09-07
KR20180128525A (ko) 2018-12-03
KR20140015340A (ko) 2014-02-06
EP2681760A4 (en) 2016-12-07
JP6140082B2 (ja) 2017-05-31
EP2681760A2 (en) 2014-01-08

Similar Documents

Publication Publication Date Title
US9038003B2 (en) Method and system for critical dimension uniformity using charged particle beam lithography
US9625809B2 (en) Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8612901B2 (en) Method and system for forming patterns using charged particle beam lithography with multiple exposure passes
KR102005083B1 (ko) 하전 입자 빔 리소그래피를 사용하여 패턴들을 형성하는 방법 및 시스템
US20120217421A1 (en) Method and system for forming patterns using charged particle beam lithography with overlapping shots
US20130283219A1 (en) Method and system for forming patterns using charged particle beam lithography
US9859100B2 (en) Method and system for dimensional uniformity using charged particle beam lithography
US9057956B2 (en) Method and system for design of enhanced edge slope patterns for charged particle beam lithography
KR20110021698A (ko) 하전 입자 빔 리소그래피에 의해 곡선 캐릭터들을 사용하여 패턴을 형성하고 분할하기 위한 방법
WO2013043406A1 (en) Method and system for optimization of an image on a substrate to be manufactured using optical lithography
US8745549B2 (en) Method and system for forming high precision patterns using charged particle beam lithography
US20120221980A1 (en) Method and system for design of enhanced accuracy patterns for charged particle beam lithography
US20140129997A1 (en) Method and system for dimensional uniformity using charged particle beam lithography
US20120221985A1 (en) Method and system for design of a surface to be manufactured using charged particle beam lithography
US20130306884A1 (en) Method and System for Forming Non-Manhattan Patterns Using Variable Shaped Beam Lithography
TWI592762B (zh) 使用帶電粒子束微影術形成圖案的方法與系統
US20130252143A1 (en) Method and system for design of enhanced accuracy patterns for charged particle beam lithography
WO2012118621A2 (en) Method and system for design of enhanced patterns for charged particle beam lithography

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000