KR101999598B1 - Transparent organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

The present invention provides a display device comprising: a first substrate in which a plurality of pixel regions including a plurality of subpixel regions and a transmission region are defined; A micro electro mechanical systems (MEMS) structure provided in each pixel area of the first substrate and including a plurality of anchors, beams connected to each of the plurality of anchors, and shutters connected to the beams; And an organic light emitting diode disposed in each of the subpixel regions on the first substrate, wherein the shutter serves to block light incident from the rear surface of the first substrate, and the transmission region within each pixel region. The present invention provides a transparent organic light emitting diode and a method of manufacturing the same, which selectively move between a plurality of subpixel regions.

Description

Transparent organic electroluminescent device and method of manufacturing the same {Transparent organic electro luminescent device and method of fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent organic electroluminescent device, and in particular, by embedding a light shielding layer to improve external visibility and black luminance characteristics, and to simplify the manufacturing method. It relates to a production method thereof.

The organic light emitting diode, which is one of the flat panel displays (FPDs), has high luminance and low operating voltage characteristics.

Since the organic light emitting device emits light by itself, it has a high contrast ratio, an ultra-thin display, and a response time of several microseconds. There is no limitation and it is stable even at low temperature, and it is easy to manufacture and design a driving circuit because it is driven at a low voltage of DC 5V to 15V. In addition, the manufacturing process of the organic light emitting device is very simple because the deposition (deposition) and encapsulation (encapsulation) equipment is all.

Therefore, the organic light emitting device having the above-described advantages has been recently used in various IT devices such as TVs, monitors, and mobile phones.

Hereinafter, the basic structure of the organic EL device will be described in more detail.

1 is a schematic cross-sectional view of one pixel area of a conventional organic electroluminescent device.

The organic light emitting diode 1 is largely composed of an organic light emitting diode substrate 10 having an array element and an organic light emitting diode E, and an opposing substrate 70 for encapsulation opposite thereto.

The array device included in the organic light emitting diode substrate 10 includes a switching thin film transistor (not shown) connected to a gate and a data line (not shown), and a driving thin film transistor connected to the organic light emitting diode (E). The organic light emitting diode E includes a first electrode 47, an organic light emitting layer 55, and a second electrode 58 connected to the driving thin film transistor DTr.

In the organic light emitting device 1 having such a configuration, light generated from the organic light emitting layer 55 is emitted toward the first electrode 47 or the second electrode 58 to display an image. Such an organic light emitting device 1 is manufactured in a top emission method for displaying an image using light emitted toward the second electrode 58 in consideration of an aperture ratio and the like.

Looking at the path of light in the conventional organic light emitting device 1 having such a configuration, the voltage is applied to the first and second electrodes 47 and 58, the electrons and holes are supplied to the organic light emitting layer 55 Light is generated by recombination in the organic light emitting layer 55.

The light emitted from the organic light emitting layer 55 is emitted toward the first electrode 47 and the second electrode 58 and finally passes through the second electrode 58 and the counter substrate 70 through internal reflection. The sun is released to the outside, and the light exiting through the surface of the counter substrate 70 is incident to the user's eyes, so that the user can watch the image.

In recent years, transparent display devices have been proposed.

The transparent display device is a display device which normally maintains a transparent state like glass and serves as a display element when implementing an image or an image.

Such transparent display devices have recently been used as media such as product advertisements in building glass, store window windows, exhibition booths, and the like, and attention has recently been focused.

As a display device capable of implementing such a transparent display device, an organic light emitting device capable of self-emission is becoming. This is because a display device such as a liquid crystal display device is a light-receiving device rather than a self-luminous device, and thus a transparent display device cannot be realized by requiring a backlight unit.

On the other hand, the general transparent organic light emitting device 80 is red, green, blue (R, G, B), as shown in Figure 2 (a plan view briefly showing one pixel area of the general transparent organic light emitting device) One pixel region having sub-pixel regions P1, P2, and P3, each of which includes an organic light emitting layer LA and an organic light emitting layer LA, and more specifically, a driving unit DA for driving an organic light emitting diode. A light transmitting region TA may be formed in P), and a driving unit DA including the organic light emitting layer LA, a driving thin film transistor (not shown), and a switching thin film transistor (not shown) is formed. The array substrate 70 and the substrate for encapsulation (not shown) are both made of a transparent material.

However, the conventional transparent organic light emitting device 80 having such a transparent area TA can realize a white color including red, green, and blue, but the black color is not well implemented, and thus the black luminance is not high. It is relatively low and external visibility is reduced. This is because light leakage occurs due to external light transmitted from the rear surface even when the power applied to the organic light emitting diode is turned off.

Accordingly, to solve this problem, as shown in FIG. 3 (a schematic cross-sectional view of a conventional transparent organic light emitting diode including a shutter substrate), a switching element (STr) such as a thin film transistor is provided and connected thereto. A transparent organic electroluminescent device is formed by combining a shutter substrate 95 having a light shielding layer 97 capable of driving on and off with an organic electroluminescent device 80 having the configuration according to FIG. (90) is implemented.

However, the conventional transparent organic light emitting diode 90 having such a configuration is connected to a driving and switching thin film transistor DTr (not shown) and the driving thin film transistor DTr, and has a first electrode 75 and an organic light emitting layer 76. ) And an organic electroluminescent device (80) consisting of a first substrate (70) having an organic light emitting diode (E) consisting of a second electrode (78) and a second substrate (79) for encapsulation opposite thereto. In addition to the switching element (STr) is connected to the shutter substrate 95 having a light shielding layer 97 that can be connected to the on and off (selective) on and off additionally attached to the trend of lightweight thin It is against the trend of current display devices to have.

In addition, the shutter substrate 95 must be manufactured separately in addition to the organic light emitting diode 80 to manufacture the shutter substrate 95. The shutter substrate 95 can be selectively implemented to enable the light blocking layer 97 to be turned on and off. The manufacturing process is very complicated because a switching thin film transistor must be formed as an example of the connected switching element STr.

In particular, in order to form the thin film transistor, which is the switching element STr, at least three mask processes must be performed to pattern the gate electrode 60, the semiconductor layer 63, the source and drain electrodes 65 and 66, and Since the patterning of the layer 97 itself requires a single patterning process, the conventional transparent organic light emitting device 90 including the shutter substrate 95 is a general organic light emitting device (see FIG. 1). Since at least four additional mask processes must be performed, the manufacturing time per unit time increases, and the manufacturing cost increases.

The present invention has been made to solve the above problems, the present invention improves the external visibility without the addition of a shutter substrate including a separate light-shielding layer and a thin film transistor that is a switching element, further reduce the manufacturing process and can implement a lightweight thin It is an object of the present invention to provide a transparent display device.

According to an aspect of the present invention, there is provided a transparent organic light emitting device comprising: a first substrate in which a plurality of pixel regions including a plurality of subpixel regions and transmission regions are defined; A micro electro mechanical systems (MEMS) structure provided in each pixel area of the first substrate and including a plurality of anchors, beams connected to each of the plurality of anchors, and shutters connected to the beams; And an organic light emitting diode disposed in each of the subpixel regions on the first substrate, wherein the shutter serves to block light incident from the rear surface of the first substrate, and the transmission region within each pixel region. And selectively move between and a plurality of sub-pixel areas.

In this case, the organic light emitting diode is characterized in that formed on the MEMS structure.

The MEMS structure is formed in direct contact with the surface of the first substrate, and a driving between the MEMS structure and the organic light emitting diode is connected to the first switching thin film transistor and the organic light emitting diode for each subpixel region. A thin film transistor is provided, and a second switching thin film transistor connected to an anchor, which constitutes one component of the MEMS structure, is provided for each pixel area.

In addition, a buffer layer is provided between the first and second switching thin film transistors and the driving thin film transistor and the MEMS structure, an empty space is provided on the surface of the buffer layer and the first substrate, and the buffer layer is formed of one of the MEMS structures. It is characterized by being supported by the anchor as a component.

The buffer layer may include a first hole exposing the anchor, and one electrode of the second switching thin film transistor may contact the anchor through the first hole.

Meanwhile, each of the subpixel regions on the first substrate includes a first switching thin film transistor and a driving thin film transistor connected to the organic light emitting diode, and a second switching thin film transistor connected to one anchor of the MEMS structure for each pixel region. The MEMS structure is disposed on the first and second switching thin film transistors and the driving thin film transistor.

In this case, a first planarization layer is provided between the first and second switching thin film transistors and the driving thin film transistor and the MEMS structure, and a buffer layer and a second planarization layer are provided on the MEMS structure, and the buffer layer and the first planarization layer are provided. An empty space is provided between the planarization layers, and the buffer layer is supported by the anchor, which is one component of the MEMS structure.

At least one anchor of the plurality of anchors provided in the pixel area may be in contact with one electrode of the second switching thin film transistor through a first contact hole provided in the first planarization layer.

In addition, the organic light emitting diode is formed on the second planarization layer, and a connection pattern made of the same material is provided on the same layer forming the anchor in contact with the drain electrode of the driving thin film transistor. And a second contact hole exposing the connection pattern in the second planarization layer, wherein the first electrode of the organic light emitting diode contacts the connection pattern through the second contact hole.

The black layer is formed on the top of the shutter.

The MEMS structure may further include: first, second, and third anchors symmetrically configured at both ends facing each other in the pixel region; First and second beams connected to each of the second anchors in a symmetrical structure, a third beam connected to each of the first anchors, and a fourth beam connected to each of the third anchors; And a shutter connected to one end of the third beam and the fourth beam, wherein the first beam and the third beam provided at both ends of the pixel area are spaced apart from each other to face each other, and the second beam and the fourth beam. The beams are characterized by being positioned to face apart from each other.

In the method of manufacturing a transparent organic light emitting device according to an embodiment of the present invention, a plurality of anchors and the plurality of anchors are formed in each pixel region on a first substrate, each pixel region including a plurality of subpixel regions and a transmission region. Forming a micro electro mechanical systems (MEMS) structure comprising a beam coupled with the anchor and a shutter coupled with the beam; Forming a first switching thin film transistor and a driving thin film transistor connected to the organic light emitting diode for each subpixel region on the MEMS structure, and a second switching thin film transistor connected to an anchor of the MEMS structure for each pixel region; And forming an organic light emitting diode in each of the subpixel regions over the first and second switching thin film transistors and the driving thin film transistor.

In this case, before forming the first and second switching thin film transistors and the driving thin film transistor, a buffer layer supported by the anchor is formed on the MEMS structure, and an empty space is formed between the buffer layer and the first substrate surface. Steps.

In addition, forming a buffer layer supported by the anchor over the MEMS structure and forming an empty space between the buffer layer and the first substrate surface may include forming an organic material layer over the MEMS structure; Forming a buffer layer over the organic material layer, and forming a melting hole exposing the organic material layer in the buffer layer; Forming an empty space between the surface of the first substrate and the buffer layer by dissolving the organic material layer through an melting hole in an etchant dissolving the organic material layer and removing the dissolved organic material layer. .

In the method of manufacturing a transparent organic light emitting device according to another embodiment of the present invention, the first switching thin film for each subpixel region on the first substrate in which a plurality of pixel regions including a plurality of subpixel regions and transmission regions are defined Forming a transistor and a driving thin film transistor, and simultaneously forming a second switching thin film transistor for each pixel region; Shutters connected to the plurality of anchors, the plurality of beams connected to the plurality of anchors, and the plurality of anchors connected to one electrode of the second switching thin film transistor on each pixel area over the first and second switching thin film transistors and the driving thin film transistors. Forming a micro electro mechanical systems (MEMS) structure; Forming an organic light emitting diode connected to one electrode of the driving thin film transistor in each of the subpixel regions over the MEMS structure.

And forming a first planarization layer over the first and second switching thin film transistors and the driving thin film transistor prior to forming the MEMS structure, wherein the anchor is formed on the MEMS structure before forming the organic light emitting diode. Forming a buffer layer supported by and forming an empty space between the buffer layer and the first planarization layer, and forming a second planarization layer over the buffer layer.

And forming a buffer layer supported by the anchor over the MEMS structure and forming an empty space between the buffer layer and the first planarization layer prior to forming the organic light emitting diode, the organic over the MEMS structure. Forming a material layer; Forming a buffer layer over the organic material layer, and forming a melting hole exposing the organic material layer in the buffer layer; Forming an empty space between the first planarization layer and the buffer layer by dissolving the organic material layer through an melting hole in an etchant that dissolves the organic material layer and removing the dissolved organic material layer. .

Meanwhile, the forming of the MEMS structure may include forming a first sacrificial layer having holes corresponding to each portion where the anchor is to be formed; Forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer being removed in correspondence with a portion where the beam and the shutter are to be formed and the hole; Sequentially forming an amorphous silicon layer, a metal layer, and a black material layer on the second sacrificial layer; A first photoresist pattern having a first thickness over the black material layer is formed corresponding to the portion where the shutter is to be formed, and a second photoresist pattern thinner than the first thickness is formed corresponding to the portion where the anchor is to be formed. Making a step; Removing the black material layer exposed to the outside of the first and second photoresist patterns; The black material layer is removed and anisotropic dry etching is performed on the exposed silicon layer and the amorphous silicon layer below the lower portion thereof, so that the shutter and the anchor of the triple layer structure present on the side and the upper surface of the second sacrificial layer. Forming a beam having a double layer structure present only on the side of the second sacrificial layer; Exposing the anchor of the triple layer structure by ashing to remove the second photoresist pattern; Removing the black material layer, the top layer of the exposed anchor, to have a double layer structure; Advancing the strip to expose the triple layer shutter; Removing the secondary and primary sacrificial layers.

The method may further include selectively forming an auxiliary pattern over the anchor.

And forming the MEMS structure comprises: forming a primary sacrificial layer having holes corresponding to each portion where the anchor is to be formed; Forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer being removed in correspondence with a portion where the beam and the shutter are to be formed and the hole; Sequentially forming an amorphous silicon layer and a metal layer on the second sacrificial layer; Forming a photoresist pattern on the black material layer corresponding to the portion where the shutter and the anchor are to be formed; Anisotropic dry etching is performed on the metal layer exposed to the outside of the photoresist pattern and an amorphous silicon layer below the lower portion of the photoresist pattern to form a shutter and an anchor having a double layer structure on the side and top of the second sacrificial layer. And simultaneously forming a beam of a double layer structure present only on the side of the second sacrificial layer; Exposing the double layer structure anchors, beams and shutters by stripping to remove the photoresist pattern; Removing the secondary and primary sacrificial layers.

In this case, forming a black layer on the shutter.

In the transparent organic light emitting device according to the embodiment of the present invention, a light switching and a second switching thin film transistor for on / off operation thereof select a transmission and blocking of light on a first substrate including a driving and a first switching thin film transistor. Since the shutter is provided, a shutter substrate including a separate switching element and a light shielding layer connected thereto is not required, thereby achieving a light-weight thin transparent organic light emitting diode.

Furthermore, the second switching thin film transistor for shutter on / off operation is formed on the first substrate including the organic light emitting diode and the driving thin film transistor for driving at the same time when the driving thin film transistor is formed. Compared to the organic light emitting device has an effect of simplifying the manufacturing process.

In addition, in the transparent organic light emitting device, selective black can be implemented by a shutter operation, thereby improving external visibility, thereby providing high quality display quality.

1 is a schematic cross-sectional view of one pixel area of a conventional organic electroluminescent device.
2 is a plan view briefly illustrating one pixel area of a general transparent organic light emitting display device;
3 is a schematic cross-sectional view of a conventional transparent organic light emitting device including a shutter substrate.
4 is a cross-sectional view of one pixel area of a transparent display device including an organic light emitting display device according to a first exemplary embodiment of the present invention.
FIG. 5 is a schematic plan view of one pixel area of a transparent display device including an organic light emitting diode according to a first exemplary embodiment of the present invention, and illustrates only the bank and the organic light emitting layer. FIG.
6 is a plan view showing only the MEMS structure provided in each pixel area of the organic light emitting diode according to the first embodiment of the present invention.
7 is a cross-sectional view of one pixel area of a transparent display device including an organic light emitting diode according to a second exemplary embodiment of the present invention.
8A to 8S are cross-sectional views of manufacturing steps for a portion cut along the cut line VIII-VIII in FIG. 6.
9A through 9S are cross-sectional views illustrating manufacturing steps of one subpixel region and a transmissive region of one pixel region of an organic light emitting diode according to a first exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

4 is a cross-sectional view of one subpixel region and a transmissive region of one pixel region of the transparent organic light emitting diode according to the first embodiment of the present invention, and FIG. 5 is an organic field according to the first embodiment of the present invention. FIG. 6 is a schematic plan view of one pixel area of a transparent display device including a light emitting device, and illustrates only a bank and an organic light emitting layer. FIG. 6 is a cross-sectional view of each pixel area of an organic light emitting device according to a first embodiment of the present invention. It is a top view which shows only the MEMS structure provided. In this case, each pixel area is defined as a first, second, and third subpixel area emitting red, green, and blue light, and a transmission area spaced apart from the subpixel area.

As shown, the transparent organic light emitting diode 101 according to the first embodiment of the present invention is movable with a switching and driving thin film transistor (DTr) and an organic light emitting diode (E), A first substrate 110 having a shutter 530 formed of a transmissive portion and a switching element STr2 connected thereto, and a second substrate 170 for protecting and encapsulating the organic light emitting diode E. These are joined together to form a panel state.

In this case, the second substrate 170 may be formed of a plastic having a flexible characteristic or a glass substrate and spaced apart from the first substrate 110, or the second substrate 170 may be an adhesive layer (not shown). It may be configured to contact the second electrode 158 provided on the uppermost layer of the first substrate 110 in the form of a film including).

In addition, in the transparent organic light emitting diode 101 according to the first embodiment of the present invention, an organic insulating film (not shown) or an inorganic insulating film (not shown) is further provided on the second electrode 158 so that the organic insulating film ( Not shown) or an inorganic insulating film (not shown) may be used as an encapsulation film (not shown) by itself, in which case the second substrate 170 may be omitted.

On the other hand, the configuration of the first substrate 110, which is the most important component in the transparent organic light emitting device 101 according to the first embodiment of the present invention will be described.

In the first substrate 110 of the transparent organic light emitting diode 101 according to the first embodiment of the present invention, a shutter 530 and a shutter movting a predetermined distance by an on / off operation of the switching element STr2 are provided. MEMS comprising a plurality of anchors 510 including at least one electrically connected to the switching element STr2 and a beam 520 connected to each of the anchors 510. (micro electro mechanical systems) A structure 501 is provided. In this case, the shutter 530 is characterized in that the black layer 530c having a low reflection characteristic is formed on the light blocking portion.

In addition, a buffer layer 113 is formed on the MEMS structure 501. In this case, a shutter, which is a component of the MEMS structure 501, is formed between the buffer layer 113 and the surface of the first substrate 110. An empty space for moving the 530 is provided, and the buffer layer 113 is supported by the anchor 510 of the MEMS structure 501.

On the other hand, the gate and data lines (not shown) defining each of the sub-pixel areas P1, P2, and P3 and the transmissive area TA intersecting each other over the buffer layer 113, and any of these two lines (not shown). A power supply wiring (not shown) disposed in parallel with one wiring is provided.

In this case, a switching thin film transistor (not shown) connected to the gate line (not shown) and the data line (not shown) is formed in each of the subpixel areas P1, P2, and P3, and further, the switching thin film transistor (not shown) is formed. And a driving thin film transistor DTr are connected to the one electrode and the power line (not shown).

The driving thin film transistor DTr includes a gate electrode 115, a gate insulating layer 118, an active layer 120a of pure amorphous silicon, and an ohmic contact layer 120b of impurity amorphous silicon. And source and drain electrodes 133 and 136 spaced apart from each other.

In this case, although not shown in the figure, the switching thin film transistor (not shown) also has the same structure as the driving thin film transistor DTr.

In addition, a switching element STr2 having the same configuration as the driving or switching thin film transistor DTr (not shown) is provided in the pixel area over the buffer layer 113.

In this case, the switching element STr2 is connected to the anchor 510 which is one component of the MEMS structure 501 in relation to the MEMS structure 501 and controls a movement of the shutter 530. It is becoming.

Since the switching element STr2 becomes a thin film transistor having substantially the same stacked structure as the switching thin film transistor (not shown), the switching thin film transistor connected to the gate wiring and the data wiring is a first switching thin film transistor for convenience of description below. (Not shown), and the switching element connected to the MEMS structure 501 is referred to as a second switching thin film transistor STr2.

On the other hand, the first and second switching thin film transistors (Str2) and the driving thin film transistor DTr in the drawing, the gate electrode 115, the gate insulating film 118, and an active layer made of pure amorphous silicon ( 120a) and a semiconductor layer 120 composed of an ohmic contact layer 120b formed of impurity amorphous silicon and spaced apart from each other, and the source and drain electrodes 133, 134, and 136, 137 spaced apart from each other. Although it is shown as an example having a stacked structure, the stacked configuration of the first and second switching thin film transistor (Str2) and the driving thin film transistor DTr may be variously modified.

That is, each of the first and second switching thin film transistors (Str2) and the driving thin film transistor DTr is a semiconductor including an active layer of pure polysilicon and source and drain regions of polysilicon doped with impurities on both sides thereof. An interlayer insulating film having a layer, a gate insulating film, a gate electrode formed to overlap the active layer, a semiconductor contact hole exposing the source and drain regions, and contacting the source and drain regions through the semiconductor layer contact hole, respectively. The first and second switching thin film transistors (Str2) and the driving thin film transistor DTr may each include a gate electrode and a gate insulating film. And the oxide semiconductor layer, the etch stopper, and the oxide spaced apart from each other on the etch stopper, respectively. So as to have a laminated structure of the source and drain electrodes in contact with the conductive layer may be configured.

Next, a protective layer 140 is formed on the entire surface of the first substrate 110 above the first switching and driving thin film transistor (DTr) and the second switching thin film transistor Str2.

The planarization layer 145 is formed over the passivation layer 140 on the entire display area. In this case, the planarization layer 145 and the passivation layer 140 are provided with a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr.

In addition, the drain electrode 136 is in contact with the drain electrode 136 of the driving thin film transistor DTr through the drain contact hole 143 on the planarization layer 145 and has a first electrode for each subpixel area P1, P2, or P3. 150) is formed.

An edge of the first electrode 150 may be disposed on the first electrode 150 and the planarization layer 150 to correspond to a boundary between the subpixel areas P1, P2, and P3 and the transmission area TA. The bank 153 is formed overlapping a predetermined width. The bank 153 has a form in which the center portion of the first electrode 150 is exposed in each of the subpixel regions P1, P2, and P3.

In addition, an organic emission layer 155 that emits red, green, and blue light is formed on the first electrode 150 for each of the subpixel regions P1, P2, and P3 surrounded by the bank 153.

Although not shown in the drawing, the sub-pixel areas P1, P2, and P3 include three sub-pixel areas P1, P2, and P3 that emit red, green, and blue colors, and additionally emit sub-pixel areas that emit white light. Not shown) may be further comprised of four sub-pixel areas (P1, P2, P3, not shown) for emitting red, green, blue, and white.

The second electrode 158 is formed on the entire surface of the display area AA on the organic emission layer 155.

In this case, the first electrode 150, the organic emission layer 155, and the second electrode 158 that are sequentially stacked in each of the subpixel regions P1, P2, and P3 form an organic light emitting diode E. .

On the other hand, since the first electrode 150 and the organic light emitting layer 155 are not formed in the transmission area TA provided in each pixel area P, the display device in a transparent state is always transmitted by serving to transmit the light emitted from the rear surface. It becomes a component that plays a role in making a difference.

The second substrate 170 made of glass or plastic having a transparent material is provided to face the first substrate 110 having such a configuration, and is provided with a seal pattern (not shown) through an adhesive layer (not shown) or along an edge. By attaching, the transparent organic light emitting diode S1 according to the first exemplary embodiment of the present invention is formed.

In this case, as described above, the second substrate 170 may further include an organic insulating layer (not shown) or an inorganic insulating layer (not shown) on the second electrode 158 of the first substrate 110. (Not shown) or an inorganic insulating film (not shown) may be used as an encapsulation film (not shown) per se, and in this case, the second substrate 170 may be omitted.

On the other hand, in the organic light emitting device 101 according to the first exemplary embodiment of the present invention, each pixel area P has one transmission area TA and three subpixel areas P1, P2, P3), and each of the three subpixel areas P1, P2, and P3 is disposed adjacent to each other in a first direction in which the gate line (not shown) extends in each pixel area P. Sub-pixel areas P1, P2, and P3 and the transmission area TA are arranged adjacent to each other in a second direction in which the data line (not shown) extends.

In this case, the MEMS structure 501 is a part where the shutter 530 is located is provided with a black layer 531 on the light blocking portion of the shutter 530 serves to block the transmission of light, the shutter ( The portion where the transmission portion of the 530 is located serves to transmit the light incident from the rear surface.

The MEMS structure 501 having the shutter 530 having the light transmitting part and the blocking part has a position of the light blocking part by the spring action of the beam 520 and the anchor 510 connected thereto in each pixel area P. The shutter 530 constituting the light blocking part corresponds to an area in which a subpixel area is located in each pixel area by an on / off operation of a second switching thin film transistor connected to the MEMS structure 501. It may be located in, or may be located in the transmission area.

The structure and operation of the MEMS structure 501 will be described in more detail.

The MEMS structure 501 is planarly positioned at both ends facing each other in each pixel area P, more precisely, in a direction in which the subpixel areas P1, P2, P3 and the transmission area TA are disposed, that is, in a second direction. Three spaced apart first, second, and third anchors 510a, 510b, and 510c are provided at both ends of the pixel region P, respectively, and are connected to the first, second, and third anchors 510a, 510b, and 510c. 1 to 4 beams 520a, 520b, 520c, and 520d, and shutters 530 connected to one ends of the third and fourth beams 520c and 520d of the beams 520a, 520b, 520c, and 520d. have.

One end of each of the first, second, and third anchors 510a, 510b, and 510c contacts the second anchor 510b positioned at the center thereof, and an obtuse angle is symmetrically with respect to the second anchor 510b. The first and second beams 520a and 520b are positioned, and the first and third anchors 510a and 510c and one end thereof are connected to each other and form a symmetrical structure with respect to the second anchor 510b. The third and fourth beams 520c and 520d are positioned, and the other ends of the third and fourth beams 520c and 520d are connected to the shutter 530.

The first beam 520a and the third beam 520c, the second beam 520b, and the fourth beam 520d are spaced apart from each other in a form facing each other, and the first beam positioned to face each other. The beams 520a and 3 520c, and the second beam 520b and the fourth beam 520d are shaped like a bow although their ends are not directly connected.

That is, the first beam 520a and the third beam 520c are spaced apart from the third beam 520c toward one end connected to the second anchor 510b at the other end of the first beam 520a. The second beam 520b and the fourth beam 520d are gradually increased in distance, and the second beam 520b and the fourth beam 520d are formed at the other end of the second beam 520b toward one end connected to the second anchor 510b. The distance from the four beams (520d) is characterized in that the form gradually increases.

Due to the structural characteristics of the beam 520 of the MEMS structure 501, when a predetermined voltage is applied through the anchor 510, the first beam 520a, the third beam 520c, and the second beam facing each other are applied. The shutter 530 is moved by the electrostatic force of 520b and the fourth beam 5204 and the spring action of these beams.

In this case, the first, second, and third anchors 510a, 510b, and 510c are connected to one ends of the beams 520a, 520b, 520c, and 520d to connect one end of the beams 520a, 520b, 520c, and 520d. At the same time, it serves as a medium for applying a predetermined voltage to the beams 520a, 520b, 520c, and 520d connected thereto.

First and second anchors 510a and 510b provided at any one of a pair of first, second and third anchors 510a, 510b and 510c respectively provided at both ends facing each other in the pixel area P. ) Or when the positive and negative voltages are applied to the third and second anchors 510c and 510b, respectively, between the first and third beams 520a and 520c or between the second and second beams 520b. Charges of different states are collected between the fourth beams 520d, so that attractive force is generated between the beams 520a, 520c, and 520b and 520d facing each other, so that the beams 520a and 520c facing each other are generated. The shutter 530 moves to a short side where the applied first, second and third anchors 510a, 510b and 510c are located.

In this case, the separation distance between the beams (520a, 520c, 520b, 520d) facing each other located at the other end is increased.

 At this time, if a voltage is continuously applied to the anchor 510 at one end, the state in which the shutter 530 is moved to one end in the pixel area P is maintained as it is, but at one end of the pixel area P. When the voltage applied to the located anchor 510 is cut off, the shutter 530 is restored to the default position by the spring restoring force by the beams having the increased distance of the other end.

Accordingly, when the shutter 530 is positioned in the transmission area TA in each pixel area P by the operation of the MEMS structure 501, the organic light emitting diode is blocked by blocking light incident from the rear surface of the shutter 530. In the case of driving (E), the transparent organic EL device 101 having excellent external visibility is improved by improving the black luminance characteristic.

In addition, when the shutter 530 is positioned to correspond to the three sub-pixel areas P1, P2, and P3 in each pixel area P, light is transmitted from the rear surface through the transmission area TA, and the organic electroluminescence is emitted. By not driving the diode E, the transparent organic light emitting diode 101 may form a semi-transmissive structure that acts as a semi-transmissive wall.

In addition, when the shutter 530 is positioned to correspond to the three sub-pixel areas P1, P2, and P3 in each pixel area P, light is transmitted from the rear surface through the transmission area TA. When the electroluminescent diode E is driven, the transparent organic electroluminescent device 101 may serve as the transparent organic electroluminescent device 101 in a transflective state in which an image of a rear surface thereof is visible.

Meanwhile, in the transparent organic light emitting device 101 according to the first embodiment of the present invention having the above-described configuration, the MEMS structure 501 including the shutter 530 is the lowermost layer of the first substrate 110. Although shown as an example, the position of this MEMS structure 501 can be changed on the first substrate.

Second Embodiment

That is, as shown in FIG. 7 (cross-sectional view of one pixel area of a transparent display device including an organic light emitting device according to a second embodiment of the present invention) as a second embodiment of the present invention, the MEMS structure In operation 501, a driving and first switching thin film transistor DTr (not shown) and a second switching thin film transistor STr2 are preferentially formed on the first substrate 210, and the first planarization layer 245 formed thereon is formed. ) And the buffer layer 274.

That is, the transparent organic light emitting diode 201 according to the second exemplary embodiment of the present invention crosses each other on the first substrate 210 and crosses each other, and each subpixel region P1 (not shown) and the transmission region TA are intersected with each other. Gate and data wirings (not shown) and power supply wirings (not shown) arranged in parallel with any one of these two wirings (not shown) are provided.

In this case, each of the sub-pixel regions P1 (not shown) is connected to the gate line (not shown) and the data line (not shown), and a first switching thin film transistor (not shown) is formed, further, the first switching. A driving thin film transistor DTr is connected to one electrode of the thin film transistor (not shown) and the power line (not shown).

A second switching thin film transistor STr2 having the same configuration as that of the driving thin film transistor DTr is provided in the transmission area TA in each pixel area P.

A protective layer 240 is formed on the entire surface of the first substrate 210 above the first and second switching thin film transistors STr2 and the driving thin film transistor DTr.

A first planarization layer 245 is provided in the display area over the passivation layer 240, and the anchor 510 and the beam connected to the pixel area P are disposed on the first planarization layer 245. A MEMS structure 501 is formed that includes a shutter 530 connected to the beam (not shown) and the beam (not shown).

Next, a buffer layer 247 is formed on the MEMS structure 501, wherein the buffer layer 247 is supported by the anchor 510, which is a component of the MEMS structure 501, and thus the MEMS structure 501. An empty space is formed between the first planarization layer 245 and the buffer layer 247 provided with the structure.

 The second planarization layer 248 is disposed over the buffer layer 247 in front of the display area, and each of the driving thin film transistors DTr is disposed in each subpixel area P1 (not shown) on the second planarization layer 248. The first electrode 250 connected to the drain electrode 236 is formed.

In addition, the bank 253 overlaps a predetermined width of the edge of the first electrode 250 together with the second planarization layer 248 at the boundary between the sub-pixel areas P1 and the transmission area TA. ) Is formed, and the organic light emitting layer 255 is provided in each sub-pixel region P1 (not shown) surrounded by the bank 253.

In addition, a second electrode 258 is formed over the organic emission layer 255 on the entire display area. In this case, the first electrode 250, the organic emission layer 255, and the second electrode 258 sequentially stacked on each subpixel region P1 (not shown) form an organic light emitting diode E.

The second substrate 270 is provided to face the first substrate 210 having such a configuration. In this case, the second substrate 270 may be omitted, and if omitted, an encapsulation film (not shown) may be provided to cover the second electrode 258.

The transparent organic electroluminescent device 201 according to the second embodiment of the present invention having such a configuration also has the transparent organic electroluminescent device (101 in FIG. 4) according to the first embodiment by the operation of the MEMS structure 501. The same effect is achieved.

<Production Method According to First Embodiment>

Hereinafter, a method of manufacturing a transparent organic light emitting device according to the present invention having the above-described configuration will be described. In this case, in the method of manufacturing the transparent organic light emitting diode according to the first and second embodiments, the MEMS structure 501 is preferentially formed on the first substrate, and then a thin film transistor and an organic light emitting diode are formed. After forming a device such as a thin film transistor, the MEMS structure 501 is formed first, and the method of forming each of these components is different depending on whether the organic light emitting diode is formed and the transparent organic electric field according to the first embodiment is the same. The manufacturing method of the light emitting device will be mainly described, and the manufacturing method according to the second embodiment will be described only in parts that differ from the first embodiment.

8A through 8S are cross-sectional views illustrating manufacturing steps taken along the cut line VIII-VIII of FIG. 6, and FIGS. 9A through 9S illustrate one pixel region of an organic light emitting diode according to a first exemplary embodiment of the present invention. Process cross-sectional view of one subpixel region and one transmission region. 9A to 9S, only the shutter and the anchor are shown in the MEMS structure, and an enlarged view in which the shutter and the anchor are formed is enlarged in each of the drawings.

First, as shown in FIGS. 8A and 9A, the first sacrificial layer 310 is formed by applying or depositing an organic or inorganic insulating material on a first substrate made of a transparent insulating material.

Subsequently, a mask process is performed on the first sacrificial layer 310 or a portion of the column-shaped anchor (510 of FIG. 9) is formed for each pixel region P by partially irradiating a laser beam. By removing the plurality of holes hl1 exposing the surface of the first substrate 110 is formed.

Next, as shown in FIGS. 8B and 9B, an organic or inorganic insulating material is applied or deposited on the entire surface of the first substrate 110 over the first sacrificial layer 310 having the plurality of holes hl1. The second sacrificial layer 320 is formed, and the second sacrificial layer 320 is patterned by performing a mask process on the second sacrificial layer 320 to form a beam 520 and a shutter 530 in each pixel region P. Referring to FIG. The first sacrificial layer 310 is removed by removing the portion to be exposed so that the first sacrificial layer 310 is exposed and simultaneously removing a portion corresponding to the hole hl1 provided in the first sacrificial layer 310. A hole hl1 disposed in the second substrate may extend to the second sacrificial layer 320 to expose the surface of the first substrate 110.

Next, as shown in FIGS. 8C and 9C, amorphous silicon is deposited on the secondary sacrificial layer 320 to form an amorphous silicon layer 330, and subsequently dry etching is performed on the amorphous silicon layer 330. A first metal layer 335 is formed on the entire surface of the first substrate 110 by depositing any one of possible metal materials, for example, aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), and molybdenum alloy (MoTi). do.

In this case, the amorphous silicon layer 330 and the first metal layer 335 may be formed in a seamless state even in a portion where the first and second sacrificial layers 310 and 320 are removed.

Further, a black material layer 340 having low reflection characteristics is formed by applying black resin or depositing chromium oxide on the entire surface of the first substrate 110 over the first metal layer 335.

Subsequently, a photoresist is formed on the black material layer 340 to form a photoresist layer (not shown), and halftone exposure is performed using an exposure mask (not shown) having a light transmitting portion, a blocking portion, and a semi-transmissive portion. Alternatively, the first photoresist pattern 391 having the first thickness and the second photoresist pattern 392 having the second thickness thinner than the first thickness are formed by performing diffraction exposure.

In this case, the first photoresist pattern 391 is formed corresponding to a portion where the shutter 530 is to be formed in each pixel region P, and the second photoresist pattern 392 is formed with an anchor 510. A portion, that is, a portion corresponding to the portion where the hole hl1 is formed is formed.

Next, as illustrated in FIGS. 8D and 9D, the black material layers (FIGS. 8C and 9C 340) exposed to the outside of the first and second photoresist patterns 391 and 392 may be etched and removed. The first metal layer 335 is exposed.

Next, as shown in FIGS. 8E and 9E, the black material layer 340 of FIGS. 8C and 9C is removed to expose the first metal layer exposed to the outside of the first and second photoresist patterns 391 and 392. (335 in FIGS. 8C and 9C) and an amorphous silicon layer (330 in FIGS. 8C and 9C) located below the anisotropic characteristic, more precisely, etching is mainly performed only in a direction perpendicular to the surface of the first substrate 110. The first metal layer located on the top surface of the second sacrificial layer 320 and the top surface of the first sacrificial layer 310 by performing dry anisotropy having a property that almost no etching proceeds in a horizontal direction (FIG. 8C). And 335 in 9c) and the amorphous silicon layer (330 in FIGS. 8c and 9c).

In this state, the shutter 530 and the anchor 510 having the triple layer structure of the amorphous silicon pattern 331, the first metal pattern 336, and the black layer 341 are formed in this state, and at the same time, the anisotropic dry method is performed. A beam 520 having a double layer structure of an amorphous silicon pattern 331 and a first metal pattern 336 that remain on the side of the second sacrificial layer 320 without being removed due to an etching progress characteristic is formed.

Next, as shown in FIGS. 8F and 9F, ashing is performed on the first substrate 110 on which the shutter 530, the anchor 510, and the beam 520 of the double layer structure are formed. By proceeding, the anchor layer 510 of the triple layer structure is exposed by removing the second photoresist pattern 392 of FIGS. 8E and 9E having the second thickness.

At this time, the thickness of the first photoresist pattern 391 also decreases as a result of ashing, but still remains on the shutter 530.

Next, as shown in FIGS. 8G and 9G, the anchors 510 of the triple layer structure are etched by removing the second photoresist patterns 392 of FIGS. 8F and 9F to remove the anchors. By removing the black layer (341 of FIG. 9F), which is the upper layer of 510, an anchor 510 having a double layer structure of an amorphous silicon pattern 331 and a metal pattern 336 is formed.

In this case, since the first photoresist pattern 391 remains on the shutter 530, the shutter 530 may include a lower layer 530a made of amorphous silicon, an intermediate layer 530b made of metal, and an upper layer made of black material. The triple layer structure of 530c is maintained.

Next, as shown in FIGS. 8H and 9H, a strip is performed to remove the first photoresist pattern 391 of FIGS. 8G and 9G, thereby exposing the shutter 530 of the triple layer structure.

Next, as shown in FIGS. 8I and 9I, the primary substrate 110 may be formed on the first substrate 110 in which the shutter 530 having the triple layer structure, the anchor 510 having the double layer structure, and the beam 520 are formed. And removing the first and second sacrificial layers (310 and 320 of FIGS. 8H and 9H) using an etchant that reacts with and dissolves only the second and second sacrificial layers (310 and 320 of FIGS. 8H and 9H). The triple layer structure is formed in each pixel region P on the first substrate 110 by leaving only the shutter 530 having the triple layer structure and the beam 520 and the anchor 510 having the double layer structure on the 110. To achieve the MEMS structure 501 consisting of a shutter 530 having a beam and an anchor 510 having a double-layer structure.

Since the planar structure of the MEMS structure 501 has been described in detail with reference to FIG. 6, the detailed form and operation thereof will be omitted.

On the other hand, according to the manufacturing method according to the first embodiment of the present invention, in order to make the uppermost layer of the shutter 530 become the black layer 530c, one mask process including diffraction exposure or halftone exposure is performed to perform the shutter. Although the 530 and the beam 520 and the anchor 510 are formed as an example, a mask process including a general exposure process is performed, and a shutter, a beam, and an anchor having a double layer structure made of an amorphous silicon material and a metal material. After forming a, it may proceed to the method for forming a black layer for the upper portion of the shutter.

In this case, selectively forming the black layer only on the upper part of the shutter may be formed by performing a single mask process, or selectively coating the black material only on the shutter using an inkjet apparatus and performing heat treatment on the shutter. It may be formed by a method of curing the coated black material.

Next, as shown in FIGS. 8J and 9J, an auxiliary pattern 512 is further formed on the upper surface of the first substrate 110 to form the auxiliary pattern 512 on the upper portion of the anchor 510. The top layer of the anchor 510 is positioned at a higher position than the surface of the black layer 530c constituting the top layer of the shutter 530.

This is to allow the shutter 530 to move smoothly by the action of electrostatic force and spring restoring force between the beams.

In the forming of the auxiliary pattern on the top of the anchor 510, the thickness of the shutter 530 and the anchor 510 is differently formed in the previous step, so that the anchor 510 has a thickness thicker than that of the shutter 530. When formed so that it may be omitted, it may be omitted.

Next, as illustrated in FIGS. 8K and 9K, an etchant is disposed on the front surface of the first substrate 110 over the shutter 530 including the black layer 530c and the beam 520 and the anchor 510. The first organic layer 350 is formed by applying a soluble organic material to fill the spaced area between the anchor 510, the beam 520, and the shutter 530, and coinciding with an upper surface of the anchor 510. To form.

Subsequently, a buffer layer 113 is formed by successively depositing an inorganic insulating material on the first organic layer 350, and by patterning the buffer layer 113, each subpixel region P1 (not shown) and a transmission region TA are formed. At least one drainage hole hl2 corresponding to each of the plurality of drainage holes hl2 and at least one of the plurality of anchors 510 formed in each pixel area P. The upper surface of the anchor 510 is exposed through the drainage hole hl2 by being formed corresponding to the above-described anchor 510.

Next, as shown in FIGS. 8L and 9L, the first substrate 110 having the buffer layer 113 having the plurality of holes hl2 is formed on the first organic layer 350 (FIGS. 8K and 9K). The first organic layer (350 of FIGS. 8K and 9K) is dissolved by exposing to an etchant to be dissolved and then discharged to the outside of the first substrate 110 through the hole hl2 to discharge the buffer layer 113 and the first. An empty space is formed between the surfaces of the substrate 110.

As such, an empty space is formed on the surface of the buffer layer 113 and the first substrate 110 to create an environment in which the shutter 530, which is one component of the MEMS structure 501, may move.

In this case, the buffer layer 113 is supported by the anchors 510 formed in plural (six) for each pixel region P, even if an empty space is formed.

Next, as shown in FIGS. 8M and 9M, gate and data wires (not shown) that cross each other, which are main components of a general organic light emitting diode, are disposed on the buffer layer 113, and among these two wires (not shown). A power supply wiring (not shown) is formed to be parallel to any one of the wirings, and further connected to the gate wiring (not shown) and the data wiring (not shown) in each sub-pixel area (P1, not shown), and a gate electrode. A driving thin film transistor DTr including the source and drain electrodes 133 and 136 spaced apart from the 115, the gate insulating layer 118, and the semiconductor layer 120, and a first switching having the same stacked configuration. A thin film transistor (not shown) is formed, and a second switching thin film transistor STr2 having the same stacked structure as that of the driving thin film transistor DTr is formed in the pixel region P.

The stacking configuration of the first and second switching thin film transistors STr2 and the driving thin film transistor DTr may be variously modified, and the manufacturing method may be variously modified by the stacked configuration.

The gate and data lines (not shown), the power lines (not shown), and the method of forming the first and second switching thin film transistors (STr2) and the driving thin film transistor (DTR) are conventional organic EL devices. Since the same method as the method of manufacturing a switching and driving thin film transistor, a detailed description thereof will be omitted.

However, there is a difference in the method of manufacturing the switching and driving thin film transistor of the general organic light emitting diode, the pixel region (P) in the method of manufacturing the transparent organic light emitting diode 101 according to the first embodiment of the present invention. The second switching thin film transistor STr2 is further provided at the upper portion of the second switching thin film transistor STr2. For example, the drain electrode 137 includes a plurality of anchors provided in each pixel area P. It is formed to be electrically connected to the exposed anchor 510 through the hole (hl2) provided in the buffer layer 113 of the (510).

For example, the second switching thin film transistor STr2 is disposed on the buffer layer 113 with the gate electrode 115, the gate insulating layer 118, and the semiconductor layer 120 having a double layer structure of pure and impurity amorphous silicon. When the source and drain electrodes 134 and 137 are spaced apart from each other, the gate insulating layer 148 extends to the gate insulating layer 148 corresponding to the hole hl2 exposing the anchor 510. A contact hole (ch) of the second switching thin film transistor (STr2), the drain electrode 137 of the second switching thin film to form a configuration in contact with the anchor 510 through the contact hole (ch). It is preferable to form the transistor STr2 and the gate insulating film 118.

Next, as shown in FIGS. 8N and 9N, an inorganic insulating material is deposited on the first substrate 110 over the first and second switching thin film transistors STr2 and the driving thin film transistor DTr. To form a protective layer 140.

Subsequently, an organic material, for example, photoacryl, is applied on the protective layer 140 to form a planarization layer 145 having a flat surface in the display area, and the planarization layer 145 and the protective layer 140. The mask process may be performed to pattern the drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr.

Next, as shown in FIGS. 8O and 9O, the indium tin oxide (ITO), which is a transparent conductive material having a relatively high work function value, is deposited on the planarization layer 145 to form the mask process. A first electrode 150 having a plate shape for each subpixel area P1 (not shown) and contacting the drain electrode 136 of the driving thin film transistor DTr is formed through the drain contact hole 143.

Next, as shown in FIGS. 8P and 9P, a polyimide containing an organic material, such as fluorine (F), having a hydrophobic property in addition to an organic material, preferably a photosensitive property, is formed on the first electrode 150. imide, styrene, methyl mathacrylate, polytetrafluoroethylene, or a mixture of two or more materials are coated to form an organic material layer (not shown) and mask By performing the process and patterning, the valence of the first electrode 150 provided in each subpixel area P1 (not shown) corresponding to the boundary between each subpixel area P1 (not shown) and the transmission area TA. The bank 153 is formed to overlap the predetermined width of the portion.

Subsequently, as illustrated in FIGS. 8Q and 9Q, the liquid organic light emitting material may be sprayed or sprayed using an inkjet apparatus or a nozzle coating apparatus corresponding to each subpixel region P1 (not shown) surrounded by the bank 153. By dropping, the organic emission layer 155 is formed on the first electrode 150 in each of the subpixel regions P1 (not shown).

Meanwhile, in the drawing, it is shown that only one organic light emitting layer 155 having a single layer structure is formed in each subpixel region P1 (not shown) on the first electrode 150. However, the organic light emitting layer 155 may have multiple layers. It may be made of layers.

That is, in this case, the organic light emitting layer 155 having the multilayer structure proceeds to the same method of forming the organic light emitting layer 155 of the single layer to inject holes into the auxiliary layer below or on the organic light emitting layer 155. Any one of a hole injection layer (not shown), a hole transporting layer (not shown), an electron transporting layer (not shown), and an electron injection layer (not shown) It can be configured by selectively forming the above.

Next, as illustrated in FIGS. 8R and 9R, metal materials having a relatively low work function value, for example, aluminum (Al), aluminum alloy (AlNd), silver (Ag), and magnesium (Mg) may be formed on the organic light emitting layer 155. ), Gold (Au), and aluminum magnesium alloy (AlMg) by mixing any one or two or more of the thermal evaporation in a vacuum atmosphere to the extent that light can be transmitted to the entire display area, for example 10 to 200Å The second electrode 158 having a thickness of a degree is formed.

In the case of the second electrode 158 formed by the thermal evaporation, the organic light emitting layer 155 is formed to be connected to the entire surface of the display area up to the top and side surfaces of the bank 153.

In this case, the first electrode 150, the organic emission layer 155, and the second electrode 158 sequentially stacked in each pixel area P form an organic light emitting diode E.

Next, as shown in FIGS. 8S and 9S, the second substrate 170 made of a transparent insulating material for encapsulation of the organic light emitting diode E corresponds to the first substrate 110. And a face seal (not shown) formed of any one of a frit, an organic insulating material, and a polymer material between the first substrate 110 and the second substrate 170. The first substrate 110 and the second substrate 170 in a state of coating on the entire surface of the first substrate 110, or the seal pattern along the edge of the first substrate 110 in a vacuum or inert gas atmosphere After forming (not shown), the first and second substrates 110 and 170 are bonded to each other to complete the transparent organic light emitting device 101 according to the first embodiment of the present invention.

On the other hand, by depositing or coating an inorganic insulating material or an organic insulating material on the second electrode 158 of the first substrate 110, or by re-attaching the adhesive layer (not shown) to attach a film (not shown) When used as a encapsulation film (not shown), the second substrate 170 may be omitted.

The transparent organic light emitting device 101 according to the first exemplary embodiment of the present invention manufactured by the above-described manufacturing method requires a separate shutter substrate (95 of FIG. 3) having a light blocking layer (97 of FIG. 3). Since it has a light weight effect, the second switching thin film transistor STr2, which is a component for switching the shutter 530, is a first switching and driving thin film transistor (not shown) for switching and driving the organic light emitting diode. Simultaneous formation at the time of forming DRe) simplifies the manufacturing method compared to the conventional transparent organic light emitting device (90 in FIG. 2) having a separate shutter substrate (95 in FIG. 3) having a light shielding layer (97 in FIG. 3). Has the effect.

<Manufacturing Method According to Second Embodiment>

A method of manufacturing a transparent organic light emitting diode according to a second exemplary embodiment of the present invention will be described with reference to FIG. 7, focusing on portions having a difference from that of the first exemplary embodiment.

First, a gate and data line (not shown) defining a sub-pixel area (P1, not shown) and a transmissive area (TA) on the first substrate 210 that is transparent and preferentially crosses each other, and these A power supply wiring (not shown) parallel to any one of two wirings (not shown) is formed, and a first switching thin film transistor (not shown) and a driving thin film transistor (DTr) are formed in each of the western pixel regions P1 (not shown). ) And a second switching thin film transistor STr2 in each pixel region P.

In addition, an inorganic insulating material is deposited on the first and second switching thin film transistors (STr2) and the driving thin film transistor (DTr) to form a protective layer 140, and subsequently, an organic material on the protective layer 240. Is applied to form the first planarization layer 245.

Subsequently, the first planarization layer 245 and the protection layer 240 are patterned to expose the first drain contact hole dch1 and the second switching TFT, which expose the drain electrode 236 of the driving TFT DTr. A second drain contact hole dch2 exposing the drain electrode 237 of STr2 is formed.

Next, the same method as described in the first embodiment is performed on the first planarization layer 245 having the first and second drain contact holes dch1 and dch2. ).

In this case, at least one of the anchors 510 of the anchors 510, which is a component of the MEMS structure 501, may drain the drain electrode 237 of the second switching thin film transistor STr2 through the second drain contact hole dch2. ), And the transparent organic light emitting device according to the second embodiment has the same structure as that of the anchor 510 even in response to the first drain contact hole dch1. It is another feature to form the connection pattern 600.

Next, after the MEMS structure 501 and the connection pattern 600 are formed for each pixel region P, the same method as in the first embodiment is performed on the MEMS structure 501 to the anchor 510. And a buffer layer 247 having a first contact hole ch1 exposing the top surface of the connection pattern 600.

In this case, the organic material is dissolved and removed between the buffer layer 247 and the first planarization layer 245 disposed below the empty layer to form an empty space to move the shutter 530 of the MEMS structure 501. Is achieved.

Next, a second planarization layer 248 having a flat surface is formed on the buffer layer 247. In this case, the second planarization layer 248 may be formed to extend the first contact hole ch1 to expose the connection pattern 600.

Subsequently, a bank 253 is formed on the second planarization layer 248 to correspond to a boundary between each sub-pixel area P1 (not shown) and the transmission area TA, and the angles surrounded by the bank 253 are formed. The organic emission layer 255 is formed on the first electrode 250 to correspond to the subpixel area P1 (not shown), and the second electrode 258 is continuously formed on the organic emission layer 255 in front of the display area. By forming, the first substrate 210 according to the second embodiment of the present invention is completed.

Next, the second substrate 270 is bonded to the first substrate 210 having the above configuration, or the encapsulation film is provided to provide the transparent organic light emitting device 201 according to the second embodiment of the present invention. I can complete it.

The present invention is not limited to the above-described embodiments and modifications, and various modifications can be made without departing from the spirit of the present invention.

101: transparent organic light emitting device
110: first substrate
113: buffer layer
115: gate electrode
118: gate insulating film
120: semiconductor layer
133, 134: source electrode
136, 137: drain electrode
140: protective layer
143: drain contact hole
150: first electrode
155: organic light emitting layer
158: second electrode
170: second substrate
501 MEMS structure
510: anchor
530: Shutter
DTr: Driving Thin Film Transistor
E: organic light emitting diode
P: pixel area
P1: Sub pixel area
STr2: second switching thin film transistor
TA: transmission area

Claims (21)

A first substrate in which a plurality of pixel regions including a plurality of subpixel regions and transmission regions are defined;
A micro electro mechanical systems (MEMS) structure provided in each pixel area of the first substrate and including a plurality of anchors, beams connected to each of the plurality of anchors, and shutters connected to the beams;
An organic light emitting diode provided in each of the subpixel regions on the first substrate,
The shutter serves to block light incident from the rear surface of the first substrate, and selectively moves between the transmission area and the plurality of subpixel areas within each pixel area.
When the shutter is positioned in the sub-pixel region, light incident from the rear surface of the first substrate is transmitted at the front of the transmission region,
The organic light emitting diode is formed on the MEMS structure,
The MEMS structure is formed in direct contact with the surface of the first substrate, and between the MEMS structure and the organic light emitting diode, a first switching thin film transistor and a driving thin film transistor connected to the organic light emitting diode for each subpixel region. And a second switching thin film transistor connected to an anchor, which is a component of the MEMS structure, for each pixel region.
delete delete The method of claim 1,
A buffer layer is provided between the first and second switching thin film transistors and the driving thin film transistor and the MEMS structure, an empty space is provided on the surface of the buffer layer and the first substrate, and the buffer layer is a component of the MEMS structure. Transparent organic electroluminescent device, characterized in that supported by the anchor.
The method of claim 4, wherein
The buffer layer is provided with a first hole for exposing the anchor, one electrode of the second switching thin film transistor is in contact with the anchor through the first hole transparent organic light emitting device.
A first substrate in which a plurality of pixel regions including a plurality of subpixel regions and transmission regions are defined;
A micro electro mechanical systems (MEMS) structure provided in each pixel area of the first substrate and including a plurality of anchors, beams connected to each of the plurality of anchors, and shutters connected to the beams;
An organic light emitting diode provided in each of the subpixel regions on the first substrate,
The shutter serves to block light incident from the rear surface of the first substrate, and selectively moves between the transmission area and the plurality of subpixel areas in each pixel area.
When the shutter is positioned in the sub-pixel region, light incident from the rear surface of the first substrate is transmitted at the front of the transmission region,
The organic light emitting diode is formed on the MEMS structure,
Each subpixel area on the first substrate includes a first switching thin film transistor and a driving thin film transistor connected to the organic light emitting diode, and a second switching thin film transistor connected to one anchor of the MEMS structure for each pixel area. And the MEMS structure is disposed above the first and second switching thin film transistors and the driving thin film transistor.
The method of claim 6,
A first planarization layer is provided between the first and second switching thin film transistors and the driving thin film transistor and the MEMS structure, and a buffer layer and a second planarization layer are provided on the MEMS structure, and the buffer layer and the first planarization layer are provided. An empty space is provided therebetween, and the buffer layer is supported by the anchor as one component of the MEMS structure.
The method of claim 7, wherein
The at least one anchor of the plurality of anchors provided in the pixel area is in contact with one electrode of the second switching thin film transistor through a first contact hole provided in the first planarization layer.
The method of claim 8,
The organic light emitting diode is formed on the second planarization layer, and a connection pattern made of the same material is provided on the same layer forming the anchor in contact with the drain electrode of the driving thin film transistor. 2. The planarization layer is provided with a second contact hole exposing the connection pattern, wherein the first electrode of the organic light emitting diode is in contact with the connection pattern through the second contact hole.
The method according to claim 1 or 6,
Transparent organic light emitting device, characterized in that the black layer is formed on the top of the shutter.
The method according to claim 1 or 6,
Each MEMS structure is
First, second, and third anchors symmetrically configured at both ends facing each other in the pixel area;
First and second beams connected to each of the second anchors in a symmetrical structure, a third beam connected to each of the first anchors, and a fourth beam connected to each of the third anchors;
A shutter connected to one end of the third beam and the fourth beam,
The first and third beams provided at both ends of the pixel area are spaced apart from each other to face each other, and the second and fourth beams are spaced apart from each other to face each other.
A micro electro mechanical system including a plurality of anchors, beams connected to the anchors, and shutters connected to the beams in the pixel areas on the first substrate, each pixel area including a plurality of sub-pixel areas and transmissive areas defined therein; ) Forming a structure;
Forming a driving thin film transistor connected to a first switching thin film transistor and an organic light emitting diode for each subpixel region over the MEMS structure, and a second switching thin film transistor connected to an anchor of the MEMS structure for each pixel region;
Forming an organic light emitting diode in each of the subpixel regions over the first and second switching thin film transistors and a driving thin film transistor;
Method for producing a transparent organic light emitting device comprising a.
The method of claim 12,
Forming a buffer layer supported by the anchor over the MEMS structure prior to forming the first and second switching thin film transistors and a driving thin film transistor, and forming an empty space between the buffer layer and the first substrate surface. Method for manufacturing a transparent organic light emitting device.
The method of claim 13,
Forming a buffer layer supported by the anchor over the MEMS structure, and forming a void space between the buffer layer and the first substrate surface,
Forming an organic material layer over the MEMS structure;
Forming a buffer layer over the organic material layer, and forming a melting hole exposing the organic material layer in the buffer layer;
Forming an empty space between the surface of the first substrate and the buffer layer by exposing the organic material layer to an etchant that dissolves the organic material layer through the melting hole and removing the dissolved organic material layer.
Method for producing a transparent organic light emitting device comprising a.
Each pixel region including a plurality of subpixel regions and a transmissive region forms a first switching thin film transistor and a driving thin film transistor for each subpixel region on a first defined substrate, and at the same time, a second switching thin film transistor for each pixel region. Forming a;
Shutters connected to the plurality of anchors, the plurality of beams connected to the plurality of anchors, and the plurality of anchors connected to one electrode of the second switching thin film transistor on each pixel area over the first and second switching thin film transistors and the driving thin film transistors. Forming a micro electro mechanical systems (MEMS) structure;
Forming an organic light emitting diode connected to one electrode of the driving thin film transistor in each of the subpixel regions over the MEMS structure;
Method for producing a transparent organic light emitting device comprising a.
The method of claim 15,
Forming a first planarization layer over the first and second switching thin film transistors and the driving thin film transistor prior to forming the MEMS structure;
Forming a buffer layer supported by the anchor over the MEMS structure and forming an empty space between the buffer layer and the first planarization layer prior to forming the organic light emitting diode, and second planarization over the buffer layer Method of manufacturing a transparent organic light emitting device comprising the step of forming a layer.
The method of claim 16,
Before forming the organic light emitting diode, forming a buffer layer supported by the anchor over the MEMS structure and forming an empty space between the buffer layer and the first planarization layer,
Forming an organic material layer over the MEMS structure;
Forming a buffer layer over the organic material layer, and forming a melting hole exposing the organic material layer in the buffer layer;
Forming an empty space between the first planarization layer and the buffer layer by dissolving the organic material layer through an melting hole in an etchant dissolving the organic material layer and removing the dissolved organic material layer.
Method for producing a transparent organic light emitting device comprising a.
The method according to claim 12 or 15,
Forming the MEMS structure,
Forming a primary sacrificial layer having holes corresponding to each portion where the anchor is to be formed;
Forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer being removed in correspondence with a portion where the beam and the shutter are to be formed and the hole;
Sequentially forming an amorphous silicon layer, a metal layer, and a black material layer on the second sacrificial layer;
A first photoresist pattern having a first thickness over the black material layer is formed corresponding to the portion where the shutter is to be formed, and a second photoresist pattern thinner than the first thickness is formed corresponding to the portion where the anchor is to be formed. Making a step;
Removing the black material layer exposed to the outside of the first and second photoresist patterns;
By removing the black material layer, anisotropic dry etching is performed on the exposed metal layer and an amorphous silicon layer disposed below the black material layer, thereby forming a shutter and an anchor having a triple layer structure on the side and top of the secondary sacrificial layer. And simultaneously forming a double layered beam that exists only on a side of the secondary sacrificial layer;
Exposing the anchor of the triple layer structure by ashing to remove the second photoresist pattern;
Removing the black material layer, the top layer of the exposed anchor, to have a double layer structure;
Advancing the strip to expose the triple layer shutter;
Removing the secondary and primary sacrificial layers
Method for producing a transparent organic light emitting device comprising a.
The method of claim 18,
A method of manufacturing a transparent organic light emitting device further comprising the step of selectively forming an auxiliary pattern on the anchor.
The method according to claim 12 or 15,
Forming the MEMS structure,
Forming a primary sacrificial layer having holes corresponding to each portion where the anchor is to be formed;
Forming a second sacrificial layer on the first sacrificial layer, the second sacrificial layer being removed in correspondence with a portion where the beam and the shutter are to be formed and the hole;
Sequentially forming an amorphous silicon layer and a metal layer on the second sacrificial layer;
Forming a photoresist pattern on the metal layer corresponding to a portion where the shutter and the anchor are to be formed;
Anisotropic dry etching is performed on the metal layer exposed to the outside of the photoresist pattern and an amorphous silicon layer disposed below the photoresist pattern, thereby forming a double-layered shutter and anchor on the side and top of the secondary sacrificial layer. At the same time forming a double layered beam present only on the side of the secondary sacrificial layer;
Exposing the double layer structure anchors, beams and shutters by stripping to remove the photoresist pattern;
Removing the secondary and primary sacrificial layers
Method for producing a transparent organic light emitting device comprising a.
The method of claim 20,
Method of manufacturing a transparent organic light emitting device comprising the step of forming a black layer on top of the shutter.

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