KR101984909B1 - Manufacturing method for semiconductor donor substrate - Google Patents

Abstract

The present invention relates to a method of manufacturing a semiconductor donor substrate that enables organic materials to be deposited on a target substrate by using line heater, comprising: a body preparing step of preparing a body made of a semiconductor material; Forming a groove on a surface portion of the body to accommodate an organic material for an organic light emitting device; And a heating region forming step of heating the organic material accommodated in the groove portion to form a heating region in at least a part of the groove portion so that the organic material can be deposited on a target substrate.

Description

[0001] The present invention relates to a manufacturing method of a semiconductor donor substrate,

The present invention relates to a method of fabricating a semiconductor donor substrate, and more particularly, to a method of fabricating a semiconductor donor substrate that enables organic materials to be deposited on a target substrate by using line heating.

An organic light emitting device is an organic light emitting diode (OLED), which is an organic light emitting diode (OLED) that can emit light by itself to overcome the problem of the light receiving type that requires external light in flat panel display technology.

Such an organic light emitting device can be driven at a low voltage by forming a lighting device or a display plate using various organic phosphor compounds such as red, yellow, and blue having self-emission function, And there is an advantage that the configuration of a backlight (backlight device) for reducing the color tone is not necessary.

Accordingly, the organic light emitting device has been used in various industries as well as electric and electronic fields due to convenience in use and efficiency of produced products. In order to produce an illumination device or a display device using the organic light emitting device Various methods have been proposed.

In the conventional method of manufacturing an organic light emitting device, it is difficult to easily deposit organic materials on a target substrate and it is difficult to form a thin film in a desired pattern. In recent years, using a row heat generated by applying a vapor donor substrate electric field, A method of conveniently depositing an organic material on a surface has been proposed.

However, such a conventional donor substrate for an organic light emitting device generally has a heating layer adhered to a glass substrate or a ceramic substrate, and organic substances coated on the heating layer are guided toward the target substrate and are separately transferred This adhesion process has a problem that it is difficult to form a fine pattern of the heating layer and it is difficult to form a fine pattern such as using a separate mask even if a fine pattern of the heating layer is formed.

In addition, the conventional donor substrate for an organic light emitting device requires a lot of additional manufacturing steps such as adhesive application and curing of the adhesive, so that manufacturing cost and manufacturing time are wasted, and the thermal expansion of the metal material constituting the substrate and the heating layer There is a problem that the durability and reliability of the product are inferior because the heat layer is easily broken or peeled off during heating for a long time at a high temperature due to the difference in coefficient and adhesive property.

In addition, since the heat generated from the heating layer is easily transferred to the partition wall made of a synthetic resin material, outgassing occurs and the partition wall is easily damaged. As a result, the accuracy of the deposition pattern is degraded, There is a problem that the efficiency of light emission is lowered and a defective phenomenon occurs.

The idea of the present invention is to solve these problems, and it is possible to form a heat generating region by using an ion implantation process without using a separate mask or adhesive by using a semiconductor wafer and a semiconductor process, It is possible to precisely guide the transfer direction of the organic material by using the semi-permanent groove structure of the semiconductor material, and it is not necessary to use the conventional adhesive or the partition wall made of the synthetic resin material, The durability and reliability of the product can be greatly improved, and it is possible to improve the luminous efficiency by preventing the contamination due to the partition wall component of the conventional broken synthetic resin material, The present invention provides a method of manufacturing a semiconductor donor substrate. However, these problems are illustrative, and thus the scope of the present invention is not limited thereto.

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor donor substrate, comprising: preparing a body made of a semiconductor material; Forming a groove on a surface portion of the body to accommodate an organic material for an organic light emitting device; And a heating region forming step of heating the organic material accommodated in the groove portion to form a heating region in at least a part of the groove portion so that the organic material can be deposited on a target substrate.

In addition, according to the present invention, the body preparation step may include a semiconductor wafer preparation step of preparing a semiconductor wafer having a crystal structure that is easy to etch in a vertical direction.

According to the present invention, the groove forming step may include: forming a protective film partially on an upper surface of the body; And etching the surface portion of the body exposed from the protective film using the protective film as an etching mask to form the groove portion.

According to the present invention, the heat generating region forming step may include: an ion implanting step of implanting ions into at least a bottom surface of the groove using the protective film as an ion implantation mask; And a protective film removing step of removing the protective film.

According to the present invention, the ion implantation step may include implanting N-type or P-type impurities into the body, which is formed of any one of a pure substrate, an N-type doped substrate and a P-type doped substrate.

In addition, according to the present invention, the heat generating region forming step may further include an annealing step of annealing the ion implanted region implanted with ions.

The method of manufacturing a semiconductor donor substrate according to the present invention may further include forming a protective layer on at least one of an upper surface of the body, an inner surface of the groove, and an upper surface of the heat generating region .

According to the present invention, the annealing step and the protective layer forming step may be simultaneously performed by heating the body at a high temperature in an oxygen gas environment so that an oxide film or a high dielectric constant insulating film is formed.

According to the present invention, the groove forming step may include: forming a guide sidewall part to form the guide sidewall part so that the organic material accommodated in the groove part can be guided toward the target substrate; And a receiving recess forming step of forming a receiving recess for receiving the organic substance.

According to another aspect of the present invention, there is provided a method of manufacturing a plasma display panel, comprising the steps of: forming a body having a disk shape;

According to some embodiments of the present invention as described above, a heat generating region can be formed using an ion implantation process without using a separate mask or adhesive using a semiconductor wafer and a semiconductor process, thereby facilitating fine pattern formation And it is possible to accurately guide the transfer direction of the organic material by using the semi-permanent groove structure of the semiconductor material, and it is possible to reduce the manufacturing cost and the manufacturing time because it is unnecessary to use the conventional adhesive or the partition wall made of the synthetic resin material It is possible to improve the durability and reliability of the product significantly and to improve the luminous efficiency by preventing contamination due to the breakage component of the conventional broken synthetic resin material, Can be produced. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view illustrating a semiconductor donor substrate in accordance with some embodiments of the present invention.
FIGS. 2 to 6 are cross-sectional views showing steps of manufacturing the semiconductor donor substrate of FIG. 1. FIG.
7 is a cross-sectional view illustrating a semiconductor donor substrate in accordance with some other embodiments of the present invention.
8 is a perspective view illustrating a semiconductor donor substrate according to some alternative embodiments of the present invention.
9 is a plan view showing the semiconductor donor substrate of FIG.
10 is a cross-sectional view showing a method of manufacturing an organic light emitting device using the semiconductor donor substrate of FIG.
11 is a flow chart illustrating a method of fabricating a semiconductor donor substrate in accordance with some embodiments of the present invention.
12 is a flow chart illustrating a method of fabricating a semiconductor donor substrate in accordance with some other embodiments of the present invention.
Figure 13 is a flow chart illustrating a method of fabricating a semiconductor donor substrate in accordance with some further embodiments of the present invention.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of explanation.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise " and / or " comprising " when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention should not be construed as limited to the particular shapes of the regions shown herein, but should include, for example, changes in shape resulting from manufacturing.

Hereinafter, a semiconductor donor substrate, a method of manufacturing a semiconductor donor substrate, and a method of manufacturing an organic light emitting device according to various embodiments of the present invention will be described in detail with reference to the drawings.

1 is a cross-sectional view illustrating a semiconductor donor substrate 100 in accordance with some embodiments of the present invention.

First, as shown in FIG. 1, a semiconductor donor substrate 100 according to some embodiments of the present invention may include a body 10, a groove 20, and a heat generating region 30.

For example, the body 10 may include at least one of the semiconductor wafers W of FIG. 9 having a crystal structure that is easy to etch in the vertical direction .

The body 10 may refer to most of the semiconductor donor substrate 100 and the scope of the present invention is not limited to the shape and the shape of the body 10. [

For example, the body 10 may be a pure wafer or a bulk wafer formed by cutting an ingot on which seed crystals are grown. The groove 20 and the heat generating region 30 may also be formed of a semiconductor material. For example, the body 10 may be part or all of a pure wafer that is not doped with impurities, a bulk wafer that is doped with a small amount of impurities, or a bulk silicon-germanium wafer.

However, the body 10 is not limited to the above-described material, and all the semiconductor materials made of a semiconductor material having electrical properties can be applied if the impurities are doped.

1, the groove 20 is formed on the surface of the body 10 so as to accommodate the organic material 1 for the organic light emitting device. For example, The first side wall 20 may have a vertical side wall 21 having a first width W1 and a first depth D1 and formed vertically.

However, the grooves 20 may be formed in various forms, such as forming oblique sidewalls without being limited thereto.

The groove 20 may be formed on the surface of the body 10 through an etching process, for example, a semiconductor process. More specifically, for example, the groove 20 may be formed on the surface of the organic material 1 and the receiving groove 20-1 so that the organic substance 1 accommodated in the receiving groove 20-1 can be guided toward the target substrate S, And a guide side wall portion 20-2 formed in a connected shape.

Therefore, the organic material 1 can be accommodated in the receiving groove 20-1. When the heating region 30 generates heat, the organic material 1 is sublimated from the liquid to the gas state, It may be deposited on the target substrate S of Fig. 10 aligned vertically upward or vertically downwardly in a direction that is directed upward.

If the above described guide side wall portion 20-2 is not provided, the organic substance 1 in a gaseous state is dispersed in the left and right direction, and is hardly deposited in the precise pattern on the target substrate S. Therefore, the accuracy and accuracy of the pattern of the organic substance 1 deposited on the target substrate S can be greatly improved by using the guide side wall portion 20-2.

1, the heating region 30 may be formed by heating the organic material 1 accommodated in the groove 20 so that the organic material 1 may be deposited on the target substrate S. For example, as shown in FIG. 1, A region formed in at least a part of the groove 20 may be a portion formed as a conductive region having resistance by ion implantation of impurities into the body 10 so as to heat the organic material 1.

For example, the body 10 may be formed of a first conductive type, and the heat generating region 30 may be formed in at least a bottom portion of the bottom surface of the trench 20 in a second conductive type different from the first conductive type, May be formed by ion implantation.

More specifically, for example, the body 10 may be formed of any one of a pure substrate, an N-type doped substrate, and a P-type doped substrate, and the heat generating region 30 may be ion-implanted in N-type or P-type .

For example, when the body 10 is a pure substrate having no conductivity, the heat generating region 30 may be ion-implanted into N-type or P-type to be conductive. That is, when the body 10 is a bulk wafer doped with N type or P type, the heat generating region 30 may be ion-implanted into P type or N type opposite to the type of the body 10 . However, the present invention is not limited thereto. For example, in the case where the body 10 is a bulk wafer doped with N type or P type, the heat generating region 30 may be an N type Or P type. In this case, the concentration of the dopant doped in the heating region 30 is much higher than the concentration of the dopant doped in the body 10 so as to prevent current leakage from the heating region 30 to the body 10 .

The amount of doping of the impurities can be optimally designed according to the type of the organic material 1, the environment of use, the characteristics of the body 10, the chamber environment, and the like.

Accordingly, when an electric field is applied to the heating region 30, the heating region 30 is heated to a high temperature by the resistance heat, so that the organic substance 1 accommodated in the groove portion 20 can be sublimated from the liquid to the gas state , The organic material 1 thus sublimated is guided vertically upward by the guiding sidewall portion 20-2 to be deposited on the target substrate S of Fig. 8 aligned vertically upward or downward in a directional state .

The heating region 30 may include a sidewall heating portion formed on at least a part of the sidewall of the groove 20 in addition to a bottom heating portion formed on the bottom surface of the groove 20 .

Accordingly, the organic material 1 evaporated by the bottom heating portion can be prevented from being deposited on the vertical sidewall 21 by using the sidewall heat generating portion, and the organic material 1 evaporated on the vertical sidewall 21 The width of the groove portion 20 can be prevented from being narrowed by heating the substrate 1 by heating at a high temperature.

Therefore, the heat generating region 30 can be formed using an ion implantation process without using a separate mask or adhesive by using a semiconductor wafer and a semiconductor process, so that it is possible to easily form a fine pattern, It is possible to precisely guide the transfer direction of the organic material by using the structure of the grooves 20 of the grooves 20 and it is not necessary to use the conventional adhesive or the partition wall of the synthetic resin material so that the manufacturing cost and the manufacturing time can be reduced, Thermal and mechanical rigidity. Therefore, the durability and the reliability of the product can be greatly improved, and the contamination due to the barrier rib component of the conventional broken synthetic resin material can be prevented, and the luminous efficiency can be increased, and high quality products can be produced.

FIGS. 2 to 6 are cross-sectional views showing steps of manufacturing the semiconductor donor substrate 100 of FIG.

As shown in FIGS. 2 to 6, the semiconductor donor substrate 100 of FIG. 1 is manufactured in a stepwise manner. First, as shown in FIG. 2, a body 10 made of a semiconductor material is prepared .

In this case, the body 10 may be a pure wafer, which is an insulator formed by cutting an ingot grown from seed crystals, or a bulk wafer which is a substantially non-conductive material. For example, the body 10 may have a crystal structure The semiconductor wafer W can be prepared.

3, an upper surface (not shown) of the body 10 may be formed so that the groove 20 can be formed on the surface of the body 10 so as to accommodate the organic material 1 for the organic light emitting device. The protective film PR can be partially formed.

In this case, for example, the protective film PR may be a photoresist, spin-coated on the top surface of the body 10, and then exposed and developed using a photomask.

4, the groove portion 20 may be formed by etching the surface portion of the body 10 exposed from the protective film PR using the protective film PR as an etching mask .

At this time, the groove 20 may be dry-etched using the plasma or may be wet-etched using the etchant. The dry etching method may be advantageous for anisotropic etching in which the trench 20 is formed in the vertical direction. However, a wide variety of etching methods can be applied without necessarily being limited thereto.

In the etching process, a guide side wall portion 20-2 is formed so that the organic substance 1 can be guided toward the target substrate S, and finally, (20-1).

5, the organic material 1 accommodated in the groove 20 is heated so that the organic material 1 is deposited on at least a part of the groove 20 so that the organic material 1 can be deposited on the target substrate S. Next, A heat generating region can be formed.

For example, as shown in FIG. 5, ions can be implanted into at least the bottom surface of the groove 20 by using the protective film PR as an ion implantation mask.

At this time, for example, when the body 10 is a pure substrate having no conductivity, the heat generating region 30 may be ion-implanted into the N type or P type to be conductive. That is, when the body 10 is a bulk wafer doped with N type or P type, the heat generating region 30 may be ion-implanted into P type or N type opposite to the type of the body 10 . However, the present invention is not limited thereto. For example, in the case where the body 10 is a bulk wafer doped with N type or P type, the heat generating region 30 may be an N type Or P type.

Next, as shown in FIG. 6, the semiconductor donor substrate 100 according to one embodiment of the present invention can be manufactured by removing the protective film PR on which ions are implanted.

Then, the heat generating region 30 can be activated by annealing the ion implanted region into which ions are implanted.

7, the protective layer 40 may be formed on at least one of the upper surface F of the body 10, the inner surface of the groove 20, and the upper surface of the heat generating region 30, as shown in FIG. can do. That is, the protective layer 40 can be formed by heating the body 10 at a high temperature in an oxygen gas environment so that an oxide film or a high dielectric constant insulating film is formed simultaneously with the annealing.

More specifically, for example, the protective layer 40 may include an oxide film or a high dielectric constant insulating film.

The organic material 1 is easily separated from the body 10, the groove 20 and the heat generating region 30 when the organic material 1 is heated by using the protective layer 40, And the strength and durability of the body 10, the groove 20, and the heat generating region 30 can be improved.

Next, as shown in FIGS. 8 and 9, the body 10 may be cut so that the disk-shaped body 10 can be formed as a unit square substrate.

In this case, the grooves 20 of the semiconductor donor substrate 200 according to some embodiments of the present invention may include a plurality of row grooves 20a formed in the transverse direction of the body 10, And an electrode part 20b formed in the longitudinal direction of the body 10 to electrically connect the plurality of string groove parts 20a to each other.

8 and 9, the resistance between the heating region 30 formed in the row groove portion 20a and the heating region 30 formed in the electrode portion 20b is different from that of the heating region 30, The width W5 of the electrode portion 20b may be wider than the width W4 of the line groove portion 20a so that resistive heat can be generated intensively in the line groove portion 20a.

Therefore, since the width W5 of the electrode portion 20b is wider than the width W4 of the line groove portion 20a, the resistance is relatively low and the amount of heat generated is small, Since the width W4 of the wire groove portion 20a is narrower than the width W5 of the electrode portion 20b, the resistance is relatively high and the amount of heat generation is large, so that the wire heating of the organic material 1 can be smoothly performed .

When the heat generating region 30 using the semiconductor technology of the present invention is compared with the existing metal heating layer, not only is the existing metal heating layer easily peeled off from the substrate, If the width of the metal heating layer is narrowed or thinned due to various reasons, there is a problem that the resistance is increased at the portion and the heat is concentrated due to the increased resistance, resulting in disconnection of the metal heating layer. However, The heating region 30 may have a semi-permanent durability due to self-compensation, i.e., self compensation, which prevents overheating due to lowered peripheral current due to increased resistance even though the width is narrower .

10 is a cross-sectional view illustrating a manufacturing process of an organic light emitting device using the semiconductor donor substrate 100 of FIG.

As shown in FIG. 10, after the semiconductor donor substrate 100 of FIG. 1 is inverted, an organic substance 1 is formed as a whole on the surface of the semiconductor donor substrate 100 by using a crucible, an inkjet printer, When the electric field is instantaneously applied to the heat generating region 30, only the organic substances 1 existing in the groove 20 are selectively evaporated and aligned on the lower side of the semiconductor donor substrate 10 And can be easily transferred to the target substrate S to form a pattern.

Although the semiconductor donor substrate 100 shown in FIG. 1 is inverted for the sake of explanation, the semiconductor donor substrate 100 shown in FIG. 1 is not reversed, It is of course possible to deposit them on the substrate.

11 is a flow chart illustrating a method of fabricating a semiconductor donor substrate in accordance with some embodiments of the present invention.

As shown in FIGS. 1 to 11, a method of manufacturing a semiconductor donor substrate according to some embodiments of the present invention includes the steps of preparing a body 10 for preparing a body 10 made of a semiconductor material, A step S1 of forming a groove portion 20 in the surface portion of the body 10 so as to accommodate the organic material 1 for the organic light emitting device as shown in FIGS. 5, the organic material 1 contained in the groove 20 is heated so that at least a part of the groove 20 can be deposited on the target substrate S by heating the organic material 1 (S3) for forming a heat generating region in the heat generating region.

12 is a flow chart illustrating a method of fabricating a semiconductor donor substrate in accordance with some other embodiments of the present invention.

As shown in FIGS. 1 to 12, more specifically, for example, the body preparing step S1 is a step of preparing a semiconductor wafer W having a crystal structure that is easy to etch in the vertical direction (S11).

Next, the groove forming step S2 includes forming a protective film PR partially on the upper surface F of the body 10 and forming the protective film PR using the protective film PR as an etching mask, And an etching step S22 of etching the surface portion of the body 10 exposed from the protective film PR to form the groove 20.

The heat generating region forming step S3 may include an ion implantation step S31 for implanting ions into at least the bottom surface of the groove 20 using the protective film PR as an ion implantation mask, (S32) for removing the protective film.

At this time, the ion implantation step S31 may implant the N-type or P-type impurity into the body 10 made of any one of a pure substrate, an N-type doping substrate and a P-type doping substrate.

Figure 13 is a flow chart illustrating a method of fabricating a semiconductor donor substrate in accordance with some further embodiments of the present invention.

1 to 13, more specifically, for example, in the heat generating region forming step S3, the groove forming step S2 may include forming the organic material 1 contained in the groove 20 A guide sidewall forming step S23 for forming a guide sidewall portion 20-2 so as to guide the substrate S toward the substrate S and a receiving groove 20-1 for accommodating the organic substance 1 And a receiving groove forming step (S24).

The heat generating region forming step (S3) may further include an annealing step (S33) of annealing the ion implanted region into which ions are implanted.

The method of manufacturing a semiconductor donor substrate according to still another embodiment of the present invention is characterized in that the upper surface F of the body 10, the inner surface of the groove 20, and the upper surface of the heat generating region 30 (S4) for forming a protective layer (40) on at least one layer.

At this time, the annealing step (S33) and the protective layer forming step (S4) may be performed simultaneously by heating the body (10) at a high temperature in an oxygen gas environment so that an oxide film or a high dielectric constant insulating film is formed.

The method may further include a cutting step S5 of cutting the body 10 so that the body 10 having a disk shape may be formed as a unit square substrate after the heat generating region forming step S3 .

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

PR: Shield
S1: Body preparation step
S2: groove forming step
S3: heat generating region forming step
1: organic matter
10: Body
20: Groove
21: vertical side wall
22: inclined side wall
20-1: receiving groove
20-2:
20a:
20b:
30: heating region
31: Floor heating part
32: Side wall heating part
S: target substrate
W: Wafer
F: upper surface
40: Protective layer
100: Semiconductor donor substrate

Claims (10)

A body preparing step of preparing a body made of a semiconductor material;
Forming a groove on a surface portion of the body to accommodate an organic material for an organic light emitting device; And
And a heating region forming step of forming a heating region in at least a portion of the groove so that the organic material is deposited on the target substrate by heating the organic material accommodated in the groove portion,
In the groove forming step,
Forming a protective film partially on an upper surface of the body; And
And etching the surface portion of the body exposed from the protective film using the protective film as an etching mask to form the groove portion,
The heat generating region forming step may include:
An ion implantation step of implanting ions into at least a bottom surface of the groove portion;
Wherein the semiconductor substrate is a silicon substrate. The method according to claim 1,
The body preparation step may include:
And a semiconductor wafer preparation step of preparing a semiconductor wafer having a crystal structure that is vertically etchable. delete The method according to claim 1,
The heat generating region forming step may include:
A protective film removing step of removing the protective film;
Further comprising the steps of: The method according to claim 1,
Wherein the ion implantation step comprises:
A method for manufacturing a semiconductor donor substrate, comprising the steps of: implanting N-type or P-type impurities into said body made of any one of a pure substrate, an N-type doping substrate and a P-type doping substrate. The method according to claim 1,
The heat generating region forming step may include:
An annealing step of annealing the ion implanted region implanted with ions;
Further comprising the steps of: The method according to claim 6,
Forming a protective layer on at least one of an upper surface of the body, an inner surface of the groove portion, and an upper surface of the heat generating region;
Further comprising the steps of: 8. The method of claim 7,
Wherein the annealing step and the protective layer forming step are simultaneously performed by heating the body at a high temperature in an oxygen gas environment so as to form an oxide film or a high dielectric constant insulating film. The method according to claim 1,
In the groove forming step,
Forming a guide sidewall part to guide the organic material accommodated in the groove part toward the target substrate; And
Forming an accommodating groove portion for accommodating the organic material;
Further comprising the steps of: The method according to claim 1,
After the heat generating region forming step,
A cutting step of cutting the body so as to form the disk-shaped body in the form of a unit square board;
Further comprising the steps of:

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