KR101982615B1 - Head for Atomic Layer Deposition and Atomic Layer Deposition Apparatus Having the Same - Google Patents

Abstract

An atomic layer deposition head is provided. The head includes a superstructure having first to fourth upper compartment spaces for receiving first to fourth gases, respectively, injected from the outside or discharged from the interior, first to third gases to the substrate being transported, and A lower structure having a plurality of lower penetrating slits for supplying a fourth gas to the superstructure, and first to fourth intermediate compartment spaces provided between the superstructure and the lower structure and corresponding to the first to fourth upper compartment spaces, And an intermediate structure having a plurality of intermediate through-slits dispersedly disposed in the first to fourth intermediate partition spaces such that the first to fourth gases are passed through the plurality of lower through-slits in a specific order and a specific order is repeated . The plurality of lower penetrating slits are arranged such that the ratio of the upper widths is in the order of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratio of the lower widths is in the order of 1, 0.5, 2, 0.5, One cycle is composed of a plurality of cycles.

Description

[0001] The present invention relates to an atomic layer deposition head and an atomic layer deposition apparatus having the atomic layer deposition head,

The present invention relates to an atomic layer deposition head and an atomic layer deposition apparatus having the same, and more particularly, to atomic layer deposition on a substrate to be transferred, And an atomic layer deposition apparatus having the atomic layer deposition head.

Since the advent of semiconductor technology, semiconductor technology has been developed with the goal of miniaturization, high speed, low power consumption, etc. Recently, various functions are being developed in one semiconductor device.

As a result, a technique of depositing a thin film on an atomic layer basis, namely, an atomic layer deposition (ALD) technique has been developed, and such an atomic layer deposition technique is attracting attention as an indispensable deposition technique for the production of a nano- .

Such an atomic layer deposition technique can precisely control a very thin film compared with a conventional chemical vapor deposition (CVD) or physical vapor deposition (PVD) technique, and has a low impurity content, and there is almost no pin hole. In addition, since step coverage (characteristic for uniformly depositing portions with different height) is excellent, there is an advantage that uniform deposition can be performed even in a complicated three-dimensional structure.

The principle of atomic layer deposition is that one atomic layer is deposited as each reactant (precursor) separated by an inert gas (Ar, N _2, etc.) is supplied onto a substrate (wafer) The atomic layer can be repeatedly deposited.

That is, the atomic layer deposition is performed not by the vapor deposition of the thin film by the gas phase reaction but by the chemical adsorption of one reactant and then by the second or third gas and the chemical adsorption on the substrate The thin film is formed as it is generated.

FIG. 1 is a conceptual view showing the principle of atomic layer deposition, and shows atomic layer deposition processes sequentially.

As shown in Figs. 1 (a) and 1 (b), when the gaseous A reactant (first precursor) is supplied to the substrate, the A reactant reacts with the wafer surface and is chemisorbed. When the atomic layer of the A reactant is deposited on the surface of the substrate, the reaction does not occur even if excess A reactant is supplied.

As shown in Fig. 1 (c), the excess A reactant is removed to the outside by using an inert gas, and the gaseous B reactant (second precursor) is supplied as shown in Fig. 1 (d). B reactant reacts with the A reactant adsorbed on the substrate surface to be chemisorbed.

When the B reactant is saturated on the surface, the reaction no longer occurs. In this way, in the unreacted state of the B reactant, excessive B reactant is removed to the outside by using an inert gas as shown in FIG. 1 (e).

This process is called one cycle. By repeating this cycle, an atomic layer thin film having a desired thickness can be grown.

On the other hand, a technique of applying a deposition cycle of several cycles to a substrate to be transferred by applying a substrate transfer technique such as a roll-to-roll (R 2 R) technique to the atomic layer deposition technique has been proposed. In this case, it is very important that the process of depositing the A reactant and the B reactant proceeds to a separate process, because when the two reactants are mixed without mixing, a vapor phase reaction occurs between the reactants.

On the other hand, the technique of growing a thin film by the atomic layer deposition technique on the above-described substrate to be transferred is well-known publicly known art, and in particular, is described in detail in the following prior art documents, so that redundant explanation and illustration are omitted.

Japanese Patent Application Laid-Open No. 10-2013-0103754 (2013.09.24)

It is an object of the present invention to provide a method of depositing a plurality of atomic layers of a cyclic atom on a substrate to be transferred, in which the reaction gases can be efficiently transferred to the substrate surface without being mixed with each other, And to provide a layer deposition head.

Another object of the present invention is to provide a structure capable of effectively transferring a plurality of cyclic atomic layer deposition onto a substrate to be transferred to a substrate surface without mixing the reaction gases with each other, And an atomic layer deposition apparatus including an atomic layer deposition head.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, the present invention provides an atomic layer deposition head. The head includes a superstructure having first to fourth upper compartment spaces for receiving first to fourth gases, respectively, injected from the outside or discharged from the interior, first to third gases to the substrate being transported, and A lower structure having a plurality of lower penetrating slits for supplying a fourth gas to the superstructure, and first to fourth intermediate compartment spaces provided between the superstructure and the lower structure and corresponding to the first to fourth upper compartment spaces, And an intermediate structure having a plurality of intermediate through-slits dispersedly disposed in the first to fourth intermediate partition spaces such that the first to fourth gases are passed through the plurality of lower through-slits in a specific order and a specific order is repeated . The plurality of lower penetrating slits are arranged such that the ratio of the upper widths is in the order of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratio of the lower widths is in the order of 1, 0.5, 2, 0.5, One cycle may be composed of a plurality of cycles.

The upper structure penetrates from the upper surface to the lower surface opposed to the upper surface to inject the first to third gases into the first to third upper partition spaces respectively and to discharge the fourth gas from the fourth upper partition space The first through fourth upper through holes for the first through fourth through holes.

The first gas may be a first precursor, the second gas an inert gas, the third gas a second precursor, and the fourth gas an exhaust gas.

The first to fourth upper partition spaces and the first to fourth intermediate partition spaces are arranged along the horizontal direction perpendicular to the transport direction of the substrate and the plurality of lower through-slits and the plurality of intermediate through- Direction.

The plurality of intermediate through-slits include first through fourth intermediate gas slits disposed in each of the first through fourth intermediate partition spaces, wherein the plurality of intermediate through-slits are formed along the transport direction of the substrate, 4 intermediate gas slit, the first intermediate gas slit, the fourth intermediate gas slit, the second intermediate gas slit, the fourth intermediate gas slit, the third intermediate gas slit, and the fourth intermediate gas slit, have. The plurality of intermediate penetrating slits may be arranged to be repeated a plurality of times in accordance with the transport direction of the substrate.

Each of the lower through-slits supplying the first and third gases of the plurality of lower through-slits may have an extension extending in a spherical shape at the bottom portion.

The atomic layer deposition head is provided between the upper structure and the intermediate structure and includes a first through fourth upper partition spaces and first through fourth through hole patterns corresponding to the first through fourth intermediate partition spaces, Gasket. The first to fourth upper partition spaces are partitioned from each other by a double partition wall, and the first gasket may be configured to be sandwiched between the double partition walls.

The atomic layer deposition head may include a second gasket provided between the lower structure and the intermediate structure, the second gasket having a plurality of through-slit patterns corresponding to the plurality of lower through-slits.

The atomic layer deposition head may further include a pair of clamps connected to the head holder portion of the atomic layer deposition apparatus in association with the substructure.

According to another aspect of the present invention, there is provided an atomic layer deposition apparatus. The apparatus may include a roll-to-roll transfer apparatus for transferring a substrate, and an atomic layer deposition head, which is disposed above the substrate and performs atomic layer deposition on the substrate.

As described above, according to the means for solving the problem of the present invention, the atomic layer deposition head comprises a superstructure having first to fourth upper section spaces, first to fourth upper section spaces corresponding to the first to fourth upper section spaces, Intermediate slits having a plurality of intermediate through-slits dispersedly disposed in the first to fourth intermediate partition spaces so that the first to fourth gases are passed through the intermediate partition spaces and the plurality of lower through- Structure and top widths are in the order of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratio of the bottom widths is 1, 0.5, 2, 0.5, 1, 0.5, And a plurality of lower through-slits having a plurality of cycles of the plurality of cyclic atomic layers, wherein a plurality of the cyclic atomic layer depositions are performed on the substrate to be transferred, Can be efficiently transferred to the substrate surface without being merged, and the process speed can be increased. Accordingly, there is provided an atomic layer deposition head capable of effectively transferring a plurality of cyclic atomic layer deposition onto a substrate to be transferred to the surface of the substrate without mixing the reaction gases with each other and at the same time reducing the processing speed .

According to a preferred embodiment of the present invention, the atomic layer deposition apparatus includes an upper structure having first to fourth upper division spaces, first to fourth intermediate division spaces corresponding to first to fourth upper division spaces, And an intermediate structure having a plurality of intermediate through-slits dispersedly disposed in the first to fourth intermediate section spaces so that the first to fourth gases pass through the plurality of lower through-slits in a specific order and a specific order is repeated, One cycle in which the ratios of the widths are in the order of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratios of the lower widths are 1, 0.5, 2, 0.5, 1, 0.5, The atomic layer deposition head including a lower structure having a plurality of lower through-slits constituted by the atomic layer deposition head, The gases can be effectively transferred to the substrate surface without mixing with each other, and the process speed can be increased. Thereby, it is possible to provide an atomic layer deposition apparatus capable of effectively transferring the reaction gases to the surface of the substrate without mixing with each other and shortening the process speed in performing a plurality of cycles of atomic layer deposition on the transferred substrate have.

1 is a diagram conceptually showing the principle of atomic layer deposition.
2 is a perspective view illustrating an atomic layer deposition head according to an embodiment of the present invention.
FIG. 3 is an exploded perspective view of an atomic layer deposition head according to an embodiment of the present invention shown in FIG. 2. FIG.
4 is a rear perspective view of an upper structure of an atomic layer deposition head according to an embodiment of the present invention shown in FIG.
5 is a plan view of an intermediate structure of an atomic layer deposition head according to an embodiment of the present invention shown in FIG.
6 is a cross-sectional view taken along the line A-A of FIG. 3 to explain the operation of the chemical vapor deposition head according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention and the manner of achieving them will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in different forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Like reference numerals refer to like elements throughout the specification. Accordingly, although the same reference numerals or similar reference numerals are not mentioned or described in the drawings, they may be described with reference to other drawings. Further, even if the reference numerals are not shown, they can be described with reference to other drawings.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms 'comprises' and / or 'comprising' mean that the stated element, step, operation and / or element does not imply the presence of one or more other elements, steps, operations and / Or additions. In addition, since they are in accordance with the preferred embodiment, the reference numerals presented in the order of description are not necessarily limited to the order. In addition, in this specification, when it is mentioned that a film is on another film or substrate, it means that it may be formed directly on another film or substrate, or a third film may be interposed therebetween.

It is to be understood that one element is referred to as being 'connected to' or 'coupled to' another component if it is directly connected or coupled to another component, As shown in Fig. On the other hand, when an element is referred to as being " directly coupled to " or " directly coupled to " another element, it means that it does not intervene in the other element. &Quot; and / or " include each and every combination of one or more of the mentioned items.

The terms 'below', 'beneath', 'lower', 'above', 'upper' and the like, which are spatially relative terms, May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when inverting an element shown in the figure, an element described as 'below' or 'beneath' of another element may be placed 'above' another element. Thus, the exemplary term " below " may include both the downward and upward directions. The elements can also be oriented in different directions, so that spatially relative terms can be interpreted according to orientation.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are generated according to the manufacturing process. For example, the etched areas shown at right angles can be rounded and shaped with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

FIG. 2 is a three-dimensional view for explaining an atomic layer deposition head according to an embodiment of the present invention, and FIG. 3 is an exploded perspective view of an atomic layer deposition head according to an embodiment of the present invention shown in FIG. to be.

2 and 3, the atomic layer deposition apparatus includes a roll-to-roll transfer apparatus for transferring a substrate 10 and an atomic layer deposition apparatus (not shown) provided on the substrate 10 to perform atomic layer deposition on the substrate 10 And a wearing head (100).

The atomic layer deposition head 100 is used for supplying a reactive gas (a first precursor and a second precursor) and an inert gas to a substrate 10 being transported along one direction and discharging a reaction by-product and an unreacted precursor The superstructure 110, the intermediate structure 130, and the substructure 120. In this case,

The upper structure 110 has a function of injecting gas from the outside and transferring the gas to the lower structure 120 through the intermediate structure 130 or discharging the gas to the outside through the intermediate structure 130 from the inside, (110) may have first through fourth upper through holes (111a, 112a, 113a, 114a) for injecting or discharging gas on the upper surface.

The side surfaces of the upper structure 110, the intermediate structure 130 and the lower structure 120 are provided with an upper coupling portion 119, an intermediate coupling portion 139 and a lower coupling portion 129 for fastening them to each other And upper, middle and lower fastening portions 119, 139 and 129 may have fastening holes for bolt fastening. According to an embodiment of the present invention, the bolts pass through the fastening holes of the upper, middle and lower fastening portions 119, 139 and 129, respectively, so that the upper, middle and lower structures 110, 130 and 120 are fastened together.

A pair of clamps 161 and 162 may be coupled to the substructure 120 and the atomic layer deposition head 100 according to an embodiment of the present invention may include clips 161 and 162, To the head holder portion of the atomic layer deposition apparatus.

4 is a rear perspective view of an upper structure of an atomic layer deposition head according to an embodiment of the present invention shown in FIG.

Referring to FIG. 4, the superstructure 110 includes first to fourth upper compartment spaces 111, 112, and 113 for accommodating first to fourth gases of different types, respectively, 113, and 114, respectively. The first to fourth upper partition spaces 111, 112, 113, and 114 may be separated from each other by partition walls. The first to fourth upper partition spaces 111, 112, 113 and 114 are arranged along a horizontal direction D2 perpendicular to the transport direction D1 of the substrate 10. [

The first gas may be a first precursor, the second gas an inert gas, the third gas a second precursor, and the fourth gas an exhaust gas. That is, the first to fourth upper partition spaces 111, 112, 113, and 114 are formed of the first precursor accommodating portion 111, the inert gas accommodating portion 112, the second precursor accommodating portion 113, And may be the receiving portion 114. Therefore, the first through fourth upper through holes 111a, 112a, 113a and 114a formed on the upper surface of the upper structure 110 are respectively connected to the first precursor inlet 111a, the inert gas inlet 112a, The gas outlet 113a and the gas outlet 114a. The first through fourth upper through holes 111a, 112a, 113a and 114a are connected to the gas supply line and the discharge line of the atomic layer deposition apparatus. Here, the first precursor may be water (H ₂ O), the second precursor may be trimethaluminum (TMA), and the inert gas may be nitrogen (N ₂ ).

Referring to FIGS. 2 and 3 again, the lower structure 120 may supply the gas contained in the first to third upper compartment spaces 111, 112, and 113 to the substrate 10 during transport, The reaction gas and reaction byproducts into the fourth upper partition space 114 and the lower structure 120 may have a plurality of lower through slits 121 through which the gas passes. The plurality of lower penetrating slits 121 may be spaced apart at regular intervals in the transport direction D1 of the substrate 10. [

The intermediate structure 130 is coupled between the upper structure 110 and the lower structure 120 and includes first to fourth intermediate spaces 111, 112, 113, 114 corresponding to the first to fourth upper partition spaces 111, 112, And may have partition spaces 131, 132, 133, 134. The first to fourth intermediate partition spaces 131, 132, 133 and 134 are filled with the gases (first and second precursors) 111, 112, 113 and 114, respectively, Or an inert gas) is received, or the gas (unreacted gas and reaction byproducts) delivered in the substructure 120 is accommodated. The first to fourth intermediate partition spaces 131, 132, 133 and 134 are formed in the transport direction D1 of the substrate 10 in the same manner as the first to fourth upper partition spaces 111, 112, 113, And may be arranged along the vertical horizontal direction D2.

The upper structure 110 and the intermediate structure 130 are provided with first through fourth upper partition spaces and first through fourth through hole patterns 141 corresponding to the first through fourth intermediate partition spaces, A gasket 140 may be interposed. A second gasket 150 having penetrating slit patterns 151 corresponding to a plurality of lower penetrating slits 121 may be interposed between the intermediate structure 130 and the lower structure 120. The first and second gaskets 140 and 150 include a stretchable material such as rubber or silicon and seal the gap between the structures 110, Can play a role.

5 is a plan view of an intermediate structure of an atomic layer deposition head according to an embodiment of the present invention shown in FIG.

Referring to FIG. 5, the intermediate structure 130 may include first to fourth intermediate gas-passing gas slits 131a, 132a, 133a and 134a for passing gas therethrough. The first to fourth intermediate through gas slits 131a, 132a, 133a and 134a are provided on the bottom surface 138 of each of the first to fourth intermediate partition spaces 131, 132, 133 and 134, They extend from the bottom surface 138 to the bottom (bottom) of the intermediate structure 130.

The first to fourth intermediate penetration gas slits 131a, 132a, 133a, and 134a are formed by repeating this specific sequence while injecting different kinds of gases into the respective lower penetration slits 121 in a specific order, 132, 133, 134 so as to form the first to fourth intermediate partition spaces 131, 132, 133, 134, respectively. The first to fourth intermediate through gas slits 131a, 132a, 133a and 134a of the first to fourth intermediate partition spaces 131, 132, 133 and 134 are formed in the transport direction D1 of the substrate 10 ) At regular intervals.

The first to fourth intermediate partition spaces 131, 132, 133 and 134 of the intermediate structure 130 are formed of the first precursor accommodating portion 131, the inert gas accommodating portion 132, the second precursor accommodating portion 133, And an exhaust gas receiving portion 134. The first to fourth intermediate penetration gas slits 131a, 132a, 133a and 134a are formed with a first precursor injection slit 131a, an inert gas injection slit 132a, and a second precursor injection slit 133a And a gas discharge slit 134a.

The first to fourth intermediate through-gas slits 131a, 132a, 133a and 134a are formed along the transport direction D1 of the substrate 10 by an inert gas injection slit 132a, a gas discharge slit 134a, 1 precursor injection slit 131a, a gas discharge slit 134a, an inert gas injection slit 132a, a gas discharge slit 134a, a second precursor injection slit 133a, and a gas discharge slit 134a . These sequences constitute one cycle and the first to fourth intermediate penetration gas slits 131a, 132a, 133a and 134a may be arranged so that this cycle is repeated a plurality of times along the substrate transfer direction D1 have.

In an embodiment of the present invention, a structure in which three cycles are repeated is illustrated. According to this, the first precursor injection slit 131a and the second precursor injection slit 133a each have three numbers, one for each cycle, and the gas discharge slit 134a has four . The number of the inert gas injection slits 132a is seven, including two at one cycle and one at the end. When the number of the slits is added, the first to fourth intermediate penetration gas slits 131a, 132a, 133a and 134a may be 25 in total.

According to this configuration, the first to fourth gases are introduced along the transport direction D1 of the substrate 10 from the inert gas (I) -exhaust gas (E) -first precursor (A) -exhaust gas (E) Inert gas (I) - Exhaust gas (E) - Second precursor (B) - Exhaust gas (E) - Inert gas (I) Through the lower through-slits 121 in this order.

6 is a cross-sectional view taken along the line A-A of FIG. 3 to explain the operation of the chemical vapor deposition head according to an embodiment of the present invention.

Referring to FIG. 6, the first precursor A, the inert gas I and the second precursor B supplied from the outside are supplied to the first precursor accommodating portions 111 and 111 of the upper structure 110 and the intermediate structure 130, The first precursor injection slit 131a and the inert gas injection slit 132a of the intermediate structure 130 are accommodated in the first precursor accommodating portions 131 and 131, the inert gas accommodating portions 112 and 132, and the second precursor accommodating portions 113 and 133, And the second precursor injection slit 133a to the lower through-slits 121. [

The plurality of lower penetrating slits 121 are arranged such that the ratio of the upper widths is in the order of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratio of the lower widths is 1, 0.5, 2, 0.5, , 2, and 0.5 may be arranged in a plurality of cycles. That is, since the length of one cycle of the atomic layer deposition head 100 according to an embodiment of the present invention is shorter than that of the conventional atomic layer deposition head having the same top widths, The overall length can be shortened. Accordingly, the processing speed of the atomic layer deposition apparatus can be made faster than the conventional one.

A bottom portion of the first through-bottom gas slit 121A (third slit) and the third bottom through-gas slit 121B (seventh slit) of the bottom through-slits 121 is formed with a first bottom through- The extended portion 128 may be formed by extending the slit 121A and the third lower penetrating gas slit 121B, respectively. This may be to widen the injection area of the first and second precursors.

As the substrate 10 is transported, the first to fourth gases may be supplied (or discharged) to any position of the substrate 10 in the order of the cycle described above. That is, after the inert gas I is first supplied through the first lower penetrating slit 121I, the unreacted gas (E, exhaust gas) on the substrate 10 moves to the second lower penetrating slit 121E. ≪ / RTI >

The exhaust gas E that has passed through the second lower through-slit 121E passes through the gas discharge slit 134a of the intermediate structure 130 to the exhaust gas receiving portions 114 and 114 of the upper structure 110 and the intermediate structure 110, 134 and the exhaust gas E can be discharged to the outside through the third upper through hole 114a of the upper structure 110. [

As the substrate 10 moves, the first precursor A is supplied through the third lower penetrating slit 121A at that position, and as the substrate 10 continues to move, the unreacted gas E at that position becomes the fourth precursor A And is discharged upward through the lower through-slit 121E. The supply and discharge of the gas are repeated in the order described above. The inert gas I used in the present invention prevents the first precursor A and the second precursor B from mixing with each other when reaching the substrate 10 and removes unreacted gases and reaction byproducts do.

An atomic layer deposition head according to an embodiment of the present invention includes an upper structure having first to fourth upper partition spaces, first to fourth intermediate partition spaces corresponding to the first to fourth upper partition spaces, The intermediate structures having a plurality of intermediate through-slits dispersedly disposed in the first to fourth intermediate section spaces so that the first through fourth slits pass through the first through fourth gases in a specific order and a specific order is repeated, Wherein one cycle is composed of a sequence in which the ratios are in the order of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratio of the lower widths is 1, 0.5, 2, 0.5, 1, 0.5, By including a lower structure having a plurality of lower through-slits, in performing a plurality of cyclic atomic layer deposition on a substrate to be transferred, the reaction gases supplied into the atomic layer deposition head are not mixed with each other, Can at the same time to be effectively transmitted to the faster the line speed. Accordingly, there is provided an atomic layer deposition head capable of effectively transferring a plurality of cyclic atomic layer deposition onto a substrate to be transferred to the surface of the substrate without mixing the reaction gases with each other and at the same time reducing the processing speed .

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood. It is therefore to be understood that the above-described embodiments are illustrative and non-restrictive in every respect.

10: substrate
100: atomic layer deposition head
110, 120, 130: upper, lower, intermediate structure
111, 112, 113 and 114: first, second, third and fourth upper compartment spaces
111a, 112a, 113a, 114a: first, second, third, and fourth upper through-holes
119, 129, 139: upper, lower, intermediate fastening portions
121: Lower through slit
121A, 121B, 121E and 121I: first, third, fourth and second lower penetrating gas slits
128: Expansion unit
131, 131, 133, 134: first, second, third, and fourth intermediate compartment spaces
131a, 131a, 133a, 134a: first, second, third and fourth middle through gas slits
138:
140, 150: first and second gaskets
141: first through fourth through hole patterns
151: through-slit pattern
161, 162: Clamp

Claims (12)

An upper structure having first to fourth upper compartment spaces for respectively receiving first to fourth gases injected from outside or discharged from the interior;
A lower structure having a plurality of lower through-slits for supplying the first to third gases to the substrate being transported and for supplying the fourth gas to the upper structure; And
First to fourth intermediate compartment spaces provided between the upper structure and the lower structure and corresponding to the first to fourth upper compartment spaces, and first to fourth intermediate compartment spaces corresponding to the first to fourth upper compartment spaces, An intermediate structure having a plurality of intermediate through-slits dispersedly disposed in the first to fourth intermediate section spaces so that the specific order is repeated while passing in a specific order,
Wherein the plurality of lower penetrating slits have a ratio of the upper widths of 1, 0.5, 1, 0.5, 1, 0.5, 1 and 0.5 and the ratio of the lower widths is 1, 0.5, 2, 0.5, 1, Wherein a plurality of cycles are arranged in the order of 0.5. The method according to claim 1,
Wherein the upper structure penetrates from a first surface to a second surface opposite to the first surface to inject the first to third gases into the first to third upper partition spaces, And first through fourth upper through-holes for discharging from the fourth upper partition space. The method according to claim 1,
Wherein the first gas is a first precursor, the second gas is an inert gas, the third gas is a second precursor, and the fourth gas is an exhaust gas. The method according to claim 1,
The first to fourth upper partition spaces and the first to fourth intermediate partition spaces are arranged along a horizontal direction perpendicular to the transport direction of the substrate,
Wherein the plurality of lower through-slits and the plurality of intermediate through-slits are arranged along the transport direction of the substrate. The method according to claim 1,
Wherein the plurality of intermediate through-slits comprise first through fourth intermediate gas slits disposed in each of the first through fourth intermediate compartment spaces,
Wherein the plurality of intermediate through-slits are formed along a conveying direction of the substrate by a second intermediate gas slit, a fourth intermediate gas slit, a first intermediate gas slit, a fourth intermediate gas slit, a second intermediate gas slit, The third intermediate gas slit, and the fourth intermediate gas slit. 6. The method of claim 5,
Wherein the plurality of intermediate through-slits are arranged to be repeated a plurality of times in accordance with a conveying direction of the substrate. The method according to claim 1,
And each of the lower through-slits supplying the first and third gases among the plurality of lower through-slits has an extension extended in a concave shape in a bottom portion. The method according to claim 1,
A first gasket provided between the upper structure and the intermediate structure and having first through fourth through-hole patterns corresponding to the first through fourth upper compartment spaces and the first through fourth intermediate compartment spaces, Containing atomic layer deposition heads. 9. The method of claim 8,
Wherein the first to fourth upper partition spaces are partitioned from each other by a double partition wall, and the first gasket is fitted between the double partition walls. The method according to claim 1,
And a second gasket provided between the lower structure and the intermediate structure, the second gasket having a plurality of through-slit patterns corresponding to the plurality of lower through-slits. The method according to claim 1,
And a pair of clamps connected to the head holder portion of the atomic layer deposition apparatus in association with the lower structure. A transfer device of a roll-to-roll type for transferring a substrate; And
The atomic layer deposition apparatus according to claim 1, wherein the atomic layer deposition head is disposed above the substrate and performs atomic layer deposition on the substrate.

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