KR101968638B1 - Humidity controlling system having carbon nanotube transitor with metal chloride coating and method of operating the same - Google Patents
Humidity controlling system having carbon nanotube transitor with metal chloride coating and method of operating the same Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 56
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 56
- 229910001510 metal chloride Inorganic materials 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 15
- 229910003771 Gold(I) chloride Inorganic materials 0.000 claims description 13
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 claims description 13
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011780 sodium chloride Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000002071 nanotube Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000007791 dehumidification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HDGGAKOVUDZYES-UHFFFAOYSA-K erbium(iii) chloride Chemical compound Cl[Er](Cl)Cl HDGGAKOVUDZYES-UHFFFAOYSA-K 0.000 description 1
- NNMXSTWQJRPBJZ-UHFFFAOYSA-K europium(iii) chloride Chemical compound Cl[Eu](Cl)Cl NNMXSTWQJRPBJZ-UHFFFAOYSA-K 0.000 description 1
- 239000003230 hygroscopic agent Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920005597 polymer membrane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F11/00—Control or safety arrangements
- F24F11/0008—Control or safety arrangements for air-humidification
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F11/00—Control or safety arrangements
- F24F11/88—Electrical aspects, e.g. circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F24—HEATING; RANGES; VENTILATING
- F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
- F24F2110/00—Control inputs relating to air properties
- F24F2110/20—Humidity
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Abstract
염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템 및 구동방법이 개시된다. 개시된 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템은 가습기를 선택적으로 턴온시키는 스위칭부와 상기 스위칭부에 턴온신호를 전송하는 습도 센서를 구비한다.
상기 습도 센서는, 탄소나노튜브의 표면에 염화금속이 도포된 탄소나노튜브 트랜지스터이다. Disclosed is a humidity control system and a driving method provided with a carbon nanotube transistor coated with metal chloride. The humidity control system includes a carbon nanotube transistor coated with metal chloride. The humidity control system includes a switching unit for selectively turning on the humidifier and a humidity sensor for transmitting a turn-on signal to the switching unit.
The humidity sensor is a carbon nanotube transistor coated with a metal chloride on the surface of the carbon nanotube.
Description
염화금속이 도포된 탄소나노튜브 트랜지스터를 습도센서로 이용한 습도조절 시스템에 관한 것이다. To a humidity control system using a carbon nanotube transistor coated with metal chloride as a humidity sensor.
습도 센서는 흡습성 물질에 물 분자가 흡착되어서 흡습성 물질의 물리적 성질이 변하는 것을 감지한다. 상용화된 전자식 습도 센서는 크게 전기 저항식과 전기 용량식으로 나뉜다. 실용화 되고 있는 습도 센서로는 고분자 재료에 의한 전기저항식과 전기용량식이 많다.The humidity sensor detects the change of the physical properties of the hygroscopic material by adsorbing water molecules on the hygroscopic material. Commercial electronic humidity sensors are divided into electric resistance type and capacitive type. There are many electric resistance type and capacitance type by the polymer material as the humidity sensor which is practically used.
그러나, 고분자를 이용한 습도 센서는 고온·고습에서 안정한 특성을 얻기 힘들고, 고분자 물질이 알코올, 씨너(thinner) 등 유기 용제에 약하고, 가습과 제습 과정에서 히스테리시스(Hysteresis)가 있으며, 고분자 물질을 감습제 막으로 사용시 고분자막을 물이 통과하는 시간이 있으므로 수초에서 수십 초의 반응시간이 필요하다. However, the humidity sensor using a polymer is difficult to obtain stable characteristics at high temperature and high humidity, the polymer material is weak to organic solvents such as alcohol, thinner, hysteresis in humidification and dehumidification process, When used as a membrane, the reaction time of several seconds to several seconds is required because water has time to pass through the polymer membrane.
탄소나노튜브를 채널로 사용하는 탄소나노튜브 트랜지스터는 다양한 용도로 전자 소자에 사용된다. 특히, 탄소나노튜브는 대표적인 1차원 구조(one dimensional structure)를 가지며, 유기 용매 또는 산에도 강하다. 또한 탄소나노튜브의 뛰어난 전기적 특성으로 전자소자 개발 연구에 많이 이용된다. 탄소나노튜브를 이용한 센서 제작은 고분자의 단점인 유기 용제 및 긴 반응시간에 대한 제한을 해결할 수 있다. Carbon nanotube transistors, which use carbon nanotubes as channels, are used in electronic devices for a variety of applications. In particular, carbon nanotubes have a typical one-dimensional structure and are also resistant to organic solvents or acids. In addition, carbon nanotubes are widely used for electronic device development due to their excellent electrical properties. The fabrication of sensors using carbon nanotubes can solve the limitations of organic solvents and long reaction time, which are disadvantages of polymers.
염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템을 제공한다. There is provided a humidity control system comprising a carbon nanotube transistor coated with metal chloride.
본 발명의 일 측면에 따른 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템은: According to an aspect of the present invention, there is provided a humidity control system including a metal chloride-coated carbon nanotube transistor,
가습기를 선택적으로 턴온시키는 스위칭부; 및 A switching unit for selectively turning on the humidifier; And
상기 스위칭부에 턴온신호를 전송하는 습도 센서;를 구비하며, And a humidity sensor for transmitting a turn-on signal to the switching unit,
상기 습도 센서는, 탄소나노튜브의 표면에 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한다.The humidity sensor includes a carbon nanotube transistor having a surface of a carbon nanotube coated with a metal chloride.
상기 염화금속은 염화금(AuCl3), ErCl3, EuCl3 또는 염화나트륨일 수 있다. The metal chloride may be yeomhwageum (AuCl 3), ErCl 3, EuCl 3 , or sodium chloride.
상기 트랜지스터는 0.01 ~ 14 mM 농도의 염화금속 용액으로 도포된다. The transistor is coated with a solution of metal chloride in a concentration of 0.01 to 14 mM.
상기 스위칭부는 상기 트랜지스터가 턴온되면 상기 가습기를 정지시키며, 상기 트랜지스터가 턴오프면 상기 가습기를 가동시키는 신호를 출력한다. The switching unit stops the humidifier when the transistor is turned on and outputs a signal for activating the humidifier when the transistor is turned off.
상기 트랜지스터는, 백게이트인 실리콘 기판;The transistor includes a silicon substrate as a back gate;
상기 실리콘 기판 상의 절연층;An insulating layer on the silicon substrate;
상기 절연층 상의 네트워크 탄소나노튜브; 및 A network carbon nanotube on the insulating layer; And
상기 절연층 상에서 네트워트 탄소나노튜브의 양단을 각각 덮는 소스 전극 및 드레인 전극;을 구비할 수 있다. And a source electrode and a drain electrode covering both ends of the network carbon nanotubes on the insulating layer.
본 발명의 다른 측면에 따른 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템의 구동방법은:According to another aspect of the present invention, there is provided a method of driving a humidity control system having a carbon nanotube transistor coated with metal chloride,
상기 가습기를 턴온시키는 단계;Turning on the humidifier;
상기 습도센서가 턴온되면, 상기 스위칭부에 제1신호를 전송하는 단계; 및Transmitting a first signal to the switching unit when the humidity sensor is turned on; And
상기 스위칭부는 상기 전송된 제1신호를 받아서, 상기 가습기를 턴오프하는 제어신호를 상기 가습기에 전송하는 단계;를 구비한다. The switching unit receives the transmitted first signal and transmits a control signal for turning off the humidifier to the humidifier.
일 실시예에 따른 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템에 따르면, 염화금속이 표면에 흡착된 탄소나노튜브 트랜지스터는 수분을 흡착하여 턴온된다. 즉, 습도가 일정한 수준 이상으로 되면, 트랜지스터는 턴온되므로, 이 턴온되는 신호로 가습기를 턴오프시키는 데 사용할 수 있으며, 따라서 일정한 습도를 유지하는 습도조절계로 이용할 수 있다. According to the humidity control system having a carbon nanotube transistor coated with a metal chloride according to an embodiment, a carbon nanotube transistor in which metal chloride is adsorbed on the surface absorbs moisture and is turned on. That is, when the humidity becomes higher than a certain level, the transistor is turned on, so that it can be used to turn off the humidifier with the turned-on signal, and thus can be used as a humidity controller that maintains a constant humidity.
도 1은 일 실시예에 따른 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템의 기능적 블록도이다.
도 2는 습도 센서의 일 예를 보여주는 단면도이다.
도 3은 염화금의 흡착농도에 따른 탄소나노튜브 트랜지스터의 I-V 특성곡선이다.
도 4는 본 발명의 탄소나노튜브의 동작 메커니즘을 설명하는 모식도이다.
도 5는 염화금이 도포된 탄소나노튜브 트랜지스터를 진공 상태에서 대기중으로 노출시의 I-V 특성 곡선을 도시한 그래프이다.
도 6은 진공상태에서 수분을 진공챔버에 넣었을 때의 I-V 곡선을 보여주는 그래프이다.1 is a functional block diagram of a humidity control system including a carbon nanotube transistor coated with metal chloride according to an embodiment.
2 is a cross-sectional view showing an example of a humidity sensor.
3 is an IV characteristic curve of a carbon nanotube transistor according to adsorption concentration of chloride.
4 is a schematic view illustrating an operation mechanism of the carbon nanotube of the present invention.
5 is a graph showing an IV characteristic curve when a carbon nanotube transistor coated with chloride is exposed to the atmosphere in a vacuum state.
6 is a graph showing an IV curve when moisture is put in a vacuum chamber in a vacuum state.
이하, 첨부된 도면을 참조하여 본 발명의 실시예에 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템 및 구동방법을 상세하게 설명한다. 이 과정에서 도면에 도시된 층이나 영역들의 두께는 명세서의 명확성을 위해 과장되게 도시된 것이다. 명세서를 통하여 실질적으로 동일한 구성요소에는 동일한 참조번호를 사용하고 상세한 설명은 생략한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a humidity control system including a carbon nanotube transistor coated with a metal chloride and a driving method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this process, the thicknesses of the layers or regions shown in the figures are exaggerated for clarity of the description. The same reference numerals are used for substantially the same components throughout the specification and the detailed description is omitted.
도 1은 일 실시예에 따른 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템(100)의 기능적 블록도다. FIG. 1 is a functional block diagram of a
도 1을 참조하면, 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절 시스템(100)은 가습기를 제어하는 스위칭부(110)와 스위칭부(110)에 제어신호를 출력하는 습도 센서(130)를 구비한다. 1, a
가습기(120)는 턴온 상태에서 실내에 수증기를 공급하는 기기이면 되며, 본 발명에서는 특정한 가습기를 한정하지 않는다. The
스위칭부(110)는 턴온 상태에서 가습기(120)에 턴온 신호를 전송한다. 스위칭부(110)는 평상시 턴온 신호를 가습기로 출력한다. The
습도 센서(130)는 턴온이 되면 스위칭부(110)로 턴오프 신호를 출력하며, 턴오프 상태에서는 스위칭부(110)로 제어신호를 출력하지 않는다. The humidity sensor 130 outputs a turn-off signal to the
따라서, 실내의 습도가 미리 정한 습도 이상으로 되지 않으면, 습도 센서(130)는 스위칭부(110)로 신호를 출력하지 않으며, 스위칭부(110)는 턴온 신호를 가습기(120)로 출력한다. 한편, 실내의 습도가 미리 정한 습도 이상으로 되면, 습도 센서(130)는 스위칭부(110)로 제어신호를 출력한다. 스위칭부(110)는 제어신호에 의해 턴오프되며, 가습기(120)에 턴오프 신호를 전송한다. 이에 따라 가습기(120)는 턴오프가 되며, 따라서, 실내 습도는 일정한 상태로 유지된다. The humidity sensor 130 does not output a signal to the
실내 습도가 다시 일정 수준 이하로 내려가면, 습도 센서(130)는 스위칭부(110)에 턴온 신호를 출력하며, 스위칭부(110)는 턴온되면서 가습기(120)를 가동한다. The humidity sensor 130 outputs a turn-on signal to the
도 2는 습도 센서의 일 예를 보여주는 단면도이다. 2 is a cross-sectional view showing an example of a humidity sensor.
도 2를 참조하면, 습도 센서(200)는 염화금속이 도포된 탄소나노튜브 트랜지스터이다. 백게이트인 실리콘 기판(210) 상에 절연층(220)이 형성된다. 절연층(220)은 실리콘 옥사이드층일 수 있다. 절연층(220) 상에는 채널 기능을 하는 네트워크 탄소나노튜브(230)가 형성된다. 네트워크 탄소나노튜브(230)는 통상적인 탄소나노튜브 증착방법으로 형성된다. 즉, 절연층 상에 탄소포함 전구체가 공급되어서 네트워크 상으로 복수의 탄소나노튜브가 엉켜서 형성될 수 있다. Referring to FIG. 2, the
네트워크 탄소나노튜브(230)는 대략 5 ㎛ 길이로 형성될 수 있다. 탄소나노튜브들(230)의 양단에는 소스 전극(240) 및 드레인 전극(250)이 형성된다. 소스 전극(240) 및 드레인 전극(250)은 Ti/Au 물질층일 수 있다. The
이어서, 탄소나노튜브들(230) 상에 염화금속, 예컨대 염화금(AuCl3)이 도포된다. 염화금은 탄소나노튜브의 흡습성을 증가시키기 위한 것이며, 상세한 이유는 후술된다. 염화금은 분말상태로서 니트로메탄 용액에 대략 0.01-14 mM 농도로 녹인다. 니트로메탄 이외의 용매가 사용 될 수 있다. 이어서, 이 용액을 탄소나노튜브(230) 위에 스핀코팅할 수 있다. Then, the metal chloride onto the
염화금속으로는 염화금 이외에 염화금(AuCl3), 염화에르븀(erbium chloride: ErCl3), 염화 유로퓸(europium chloride:EuCl3), 염화나트륨과 같은 흡습제가 사용될 수 있다. As the metal chloride, a hygroscopic agent such as chloride chloride (AuCl 3 ), erbium chloride (ErCl 3 ), europium chloride (EuCl 3 ) and sodium chloride may be used in addition to chloride chloride.
도 3은 염화금의 흡착농도에 따른 탄소나노튜브 트랜지스터의 I-V 특성곡선이다. 도 3을 참조하면, 염화금이 도포되지 않은 트랜지스터(Raw 그래프)는 공기중에서 산소흡착에 의한 p-type 특성을 보여준다. 탄소나노튜브에 부착된 염화금의 농도가 0.1 mM 에서 13.8 mM 로 증가함에 따라 on-current 가 증가하는 데 비해서, 상대적으로 off-current 가 더 급하게 증가하여 마치 게이팅이 되지 않는 것처럼 보인다. 즉, 트랜지스터가 턴온 상태를 유지한다. 이러한 원인은 아래에서 설명하듯이 수분이 탄소나노튜브에 많이 흡착되기 때문이다. 3 is an I-V characteristic curve of a carbon nanotube transistor according to adsorption concentration of chloride. Referring to FIG. 3, a transistor (Raw graph) in which chloride is not applied shows p-type characteristics due to oxygen adsorption in air. On-current increases as the concentration of chloride attached to the carbon nanotubes increases from 0.1 mM to 13.8 mM, but the off-current increases more rapidly and does not seem to be gated. That is, the transistor maintains the turn-on state. This is because the moisture is adsorbed to carbon nanotubes as described below.
도 4는 본 발명의 탄소나노튜브의 동작 메커니즘을 설명하는 모식도이다. 도 2의 구성요소와 실질적으로 동일한 구성요소에는 동일한 참조번호를 사용하고 상세한 설명은 생략한다. 4 is a schematic view illustrating an operation mechanism of the carbon nanotube of the present invention. The same reference numerals are used for components substantially the same as those of FIG. 2, and a detailed description thereof will be omitted.
도 4를 참조하면, AuCl3가 도포된 CNT 트랜지스터에서, AuCl3의 일부의 Au3+는 탄소나노튜브(230)로부터 전자를 받아 환원된 Auo 가 되며, 일부는 AuCl3로 남아서 물을 탄소나노튜브(230)에 흡착시킨다. 이에 따라서, 트랜지스터는 off-current가 증가된다. 즉, AuCl3는 물을 탄소나노튜브(230)에 흡착시키는 것을 도와준다. 참조번호 260은 AuCl3 분자이며, 262는 탄소나노튜브로부터 전자를 받아서 환원된 Auo 이며, 264는 물분자를 가리킨다. In Referring to Figure 4, AuCl 3 is applied CNT transistors, a portion of the Au 3+ of AuCl 3 is a reduced Au o accept an electron from the
탄소나노튜브(230)의 표면에 흡착된 AuCl3 증가, 즉 도포된 AuCl3의 농도 증가시 이러한 물의 흡착량은 더 증가한다. 따라서, 염화금속의 흡착량의 증가에 따라 낮은 습도에서도 트랜지스터는 턴온이 되므로, 원하는 검출 습도에 턴온되는 트랜지스터를 제조할 수 있다. 검출된 습도는 염화금속의 종류에 따라서 변할 수 있다. The amount of adsorbed AuCl 3 on the surface of the
도 5는 염화금이 도포된 탄소나노튜브 트랜지스터를 진공 상태에서 대기중으로 노출시의 I-V 특성 곡선을 도시한 그래프이다. 탄소나노튜브는 AuCl3 1 mM 농도의 용액으로 도포되었으며, 드레인 전극 및 소스 전극 사이의 전압은 2V 였다. 5 is a graph showing an IV characteristic curve when a carbon nanotube transistor coated with chloride is exposed to the atmosphere in a vacuum state. The carbon nanotubes were applied with a solution of AuCl 3 at a concentration of 1 mM, and the voltage between the drain electrode and the source electrode was 2V.
도 5를 참조하면, 염화금을 도포하기 전의 상태(Raw로 표시된 그래프)와, 염화금을 도포한 후 진공상태(Vacuum으로 표시된 그래프)에서는 나노튜브 트랜지스터가 p-type 특성을 보이나, 염화금 도포 트랜지스터를 대기중에 놓았을 때(Air로 표시된 그래프) on-current 가 진공상태(Vacuum)와 거의 같은 상태를 유지하는 반면, off-current가 증가되어서 게이팅 효과가 없어진다. 즉, 트랜지스터는 턴온 상태가 된다. Referring to FIG. 5, nanotube transistors exhibit p-type characteristics in the state before the application of the chloride (graph indicated by Raw) and in the vacuum state after the application of the chloride (graph indicated by Vacuum), but the chloride- (On the graph indicated by Air), the on-current maintains almost the same state as the vacuum (Vacuum), while the off-current is increased to eliminate the gating effect. That is, the transistor is turned on.
염화금이 도포된 탄소나노튜브의 off-current 증가 원인을 찾기 위해서 공기중의 질소, 산소 및 수분을 각각 염화금이 도포된 탄소나노튜브가 배치된 진공챔버에 공급하였을 때의 I-V 특성 변화를 조사하였다. 도 6은 진공상태와 수분을 진공챔버에 넣었을 때의 I-V 곡선을 보여준다. To investigate the cause of off-current increase of chlorinated carbon nanotubes, the changes of I-V characteristics were investigated when nitrogen, oxygen and moisture in the air were supplied to a vacuum chamber in which chloride-coated carbon nanotubes were placed, respectively. Fig. 6 shows the I-V curve when the vacuum state and moisture are put into the vacuum chamber.
진공챔버에 질소와 산소를 각각 넣었을 때는 진공상태와 비교하여 off-current 의 변화가 거의 없었다. 그러나, 1 mM 염화금으로 도포된 탄소나노튜브 트랜지스터는 진공상태(10-1 torr 분위기)(Vacuum 그래프)에서는 p-type 특성을 보이지만, 진공챔버를 10 torr 수분 분위기로 만든 경우(H2O 그래프) off-current가 증가하는 것을 확인할 수 있었다. 즉, 도 5와 같은 현상이 일어는 것을 알 수 있다. 이는 off-current 증가의 원인이 수분증가이며, 이는 흡습작용을 하는 염화금의 작용임을 보여준다.When nitrogen and oxygen were introduced into the vacuum chamber, there was almost no change in the off-current compared to the vacuum state. However, the carbon nanotube transistor coated with 1 mM chloride exhibited p-type characteristics in the vacuum state (10 -1 torr atmosphere) (Vacuum graph), but when the vacuum chamber was changed to 10 torr moisture atmosphere (H2O graph) current was increased. That is, the phenomenon as shown in FIG. 5 occurs. This indicates that the increase in off-current is caused by the increase in water content, which is a function of the absorbing chloride.
상술한 실시예에 따르면, 염화금이 표면에 흡착된 탄소나노튜브 트랜지스터는 수분을 흡착하여 턴온된다. 즉, 습도가 일정한 수준 이상으로 되면, 트랜지스터는 턴온되므로, 이를 이용하여 가습기를 턴오프시키는 신호를 출력하는 데 이용하면, 용이하게 일정한 습도를 유지하는 습도조절계로 이용할 수 있다. According to the above-described embodiment, the carbon nanotube transistor in which chloride is adsorbed on the surface adsorbs moisture and is turned on. That is, when the humidity is higher than a certain level, the transistor is turned on, and when the humidity is used to output a signal for turning off the humidifier by using it, it can be easily used as a humidity controller that maintains a constant humidity.
이상에서 첨부된 도면을 참조하여 설명된 본 발명의 실시예들은 예시적인 것에 불과하며, 당해 분야에서 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능함을 이해할 수 있을 것이다. 따라서 본 발명의 진정한 보호범위는 첨부된 특허청구범위에 의해서만 정해져야 할 것이다. While the invention has been shown and described with reference to certain embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the scope of the invention as defined by the appended claims. Therefore, the true scope of protection of the present invention should be defined only by the appended claims.
100: 습도조절 시스템 110: 스위칭부
120: 가습기 130: 습도 센서100: humidity control system 110: switching unit
120: Humidifier 130: Humidity sensor
Claims (6)
상기 스위칭부에 턴온신호를 전송하는 습도 센서;를 구비하며,
상기 습도 센서는, 탄소나노튜브의 표면에 염화금속이 도포된 탄소나노튜브 트랜지스터인 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비하며,
상기 트랜지스터는, 백게이트인 실리콘 기판;
상기 실리콘 기판 상의 절연층;
상기 절연층 상의 네트워크 탄소나노튜브; 및
상기 절연층 상에서 네트워트 탄소나노튜브의 양단을 각각 덮는 소스 전극 및 드레인 전극;을 포함하며,
상기 염화금속은 염화금(AuCl3), 염화에르븀(erbium chloride: ErCl3), 염화 유로퓸(europium chloride:EuCl3) 및 염화나트륨을 포함하는 습도조절 시스템. A switching unit for selectively turning on the humidifier; And
And a humidity sensor for transmitting a turn-on signal to the switching unit,
The humidity sensor includes a carbon nanotube transistor coated with metal chloride, which is a carbon nanotube transistor coated with a metal chloride on the surface of the carbon nanotube,
The transistor includes a silicon substrate as a back gate;
An insulating layer on the silicon substrate;
A network carbon nanotube on the insulating layer; And
And a source electrode and a drain electrode covering both ends of the network carbon nanotube on the insulating layer,
Wherein the metal chloride comprises AuCl 3 , ErCl 3 , EuCl 3 , and NaCl.
상기 트랜지스터는 0.01 ~ 14 mM 농도의 염화금(AuCl3) 용액으로 도포된 습도조절 시스템. The method according to claim 1,
Wherein the transistor is coated with a solution of chloride (AuCl 3 ) in a concentration of 0.01 to 14 mM.
상기 스위칭부는 상기 트랜지스터가 턴온되면 상기 가습기를 정지시키며, 상기 트랜지스터가 턴오프면 상기 가습기를 가동시키는 신호를 출력하는 습도조절 시스템. The method according to claim 1 or 3,
Wherein the switching unit stops the humidifier when the transistor is turned on and outputs a signal that activates the humidifier when the transistor is turned off.
상기 가습기를 턴온시키는 단계;
상기 습도센서가 턴온되면, 상기 스위칭부에 제1신호를 전송하는 단계;
상기 스위칭부는 상기 전송된 제1신호를 받아서, 상기 가습기를 턴오프하는 제어신호를 상기 가습기에 전송하는 단계;를 구비한 염화금속이 도포된 탄소나노튜브 트랜지스터를 구비한 습도조절시스템의 구동방법. A method of driving a humidity control system having a carbon nanotube transistor coated with metal chloride according to claim 1,
Turning on the humidifier;
Transmitting a first signal to the switching unit when the humidity sensor is turned on;
Wherein the switching unit receives the transmitted first signal and transmits a control signal for turning off the humidifier to the humidifier.
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