KR101960744B1 - Organic Light Emitting Diode Display Device and Method for Manufacturing The Same - Google Patents

Abstract

An organic light emitting display according to an aspect of the present invention includes: an organic light emitting device formed on a lower substrate; A color refiner layer formed on the organic light emitting element and including a black matrix and a color refiner formed on a pixel defined by the black matrix; A thin film encapsulation layer formed on the color refiner layer and planarizing the color refiner layer to prevent damage to the organic light emitting element; And an upper substrate formed on the thin film sealing layer and sealing the thin film sealing layer from the outside.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent display device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display and a method of manufacturing the same, and more particularly, to an active organic light emitting display and a method of manufacturing the same.

With the development of information and communication technology, state-of-the-art flat panel display devices are in the spotlight. In particular, organic electroluminescent display devices, which are attracting attention as liquid crystal display devices, are devices using self-luminous devices, and thus can realize a lightweight thin flat panel device compared to a liquid crystal display device. Further, the organic light emitting display device is an eco-friendly flat panel display device having a wide viewing angle, excellent contrast ratio, quick response time and low power consumption.

The organic light emitting display device includes a color refiner, which is a color conversion member that is separated from red (R), green (G), and blue (B) by a light source and emits white light, A pixel which emits light of colors and does not have a color refiner emits white light to realize a full color, and an RGB system in which a red light emitting element, a green light emitting element, and a blue light emitting element are independently arranged in each pixel Can be largely divided.

FIG. 1 is a cross-sectional view showing a part of a general organic light emitting display device of the WRGB type.

1, a general organic light emitting display device of the WRGB type includes a lower substrate 101, an upper substrate 102, an organic light emitting device 110, a thin film encapsulation layer 120, and a color refiner layer 130, .

First, an organic light emitting device 110 is formed on a lower substrate 101.

Next, a thin film encapsulating layer 120 is formed on the organic light emitting element 110. The thin film encapsulation layer 120 is formed on the organic light emitting element 110 to protect the organic light emitting element 110 by blocking external moisture and air.

The thin film encapsulation layer 120 may be formed of at least one thin film, and an intermediate organic layer may be formed, and two or more inorganic layers may be formed on the upper and lower sides to protect the organic layer.

Next, a color refiner layer 130 is formed on the thin film encapsulation layer 120. [ The color refiner layer 130 is a kind of color conversion member having the same function as a color filter. The color refiner layer 130 includes a black matrix BM and color refiner (W, R, G, B). A color refiner (W, R, G, B) material is deposited on the defined pixel to form a color refiner layer 130 on the upper substrate 102. [ Can be formed. The upper substrate 102 on which the lower substrate 101 and the color refiner layer 130 are formed may be adhered so that the color refiner layer 130 may be positioned on the thin film encapsulation layer 120.

However, since the thin film encapsulation layer 120 is formed between the organic light emitting device 110 and the color repeller layer 130, the gap between the organic light emitting device 110 and the color refiner layer 130 is increased . When the distance between the organic light emitting device 110 and the color refiner layer 130 is increased, the light emitted from the organic light emitting device 110 is emitted to the color refiner layer 130, And can pass through the color refiner layer 130 formed in neighboring pixels, and in this case, a problem may arise in correct gradation representation.

Furthermore, when a high resolution organic light emitting display device is implemented, since the pitch of the pixel is further shortened, the possibility of the light leakage problem is further increased. Accordingly, there is a need for a method of preventing light leakage when implementing a high-resolution organic light emitting display device.

SUMMARY OF THE INVENTION It is an object of the present invention to provide an organic light emitting display capable of realizing high resolution.

According to an aspect of the present invention, there is provided an organic light emitting display including: an organic light emitting device formed on a lower substrate; A color refiner layer formed on the organic light emitting element and including a black matrix and a color refiner formed on a pixel defined by the black matrix; A thin film encapsulation layer formed on the color refiner layer and planarizing the color refiner layer to prevent damage to the organic light emitting element; And an upper substrate formed on the thin film sealing layer and sealing the thin film sealing layer from the outside.

According to another aspect of the present invention, there is provided an organic light emitting display including: an organic light emitting device formed on a lower substrate; A thin film encapsulation layer formed on the organic light emitting device to prevent damage to the organic light emitting device; A color refiner layer formed inside the thin film encapsulation layer and including a black matrix and a color refiner formed in a pixel defined by the black matrix; And an upper substrate formed on the thin film sealing layer and sealing the thin film sealing layer from the outside.

According to another aspect of the present invention, there is provided an organic light emitting display including: an organic light emitting device formed on a lower substrate; A color refiner layer formed between the organic light emitting elements and including a black matrix and a color refiner formed in a pixel defined by the black matrix; A thin film encapsulation layer formed on the organic light emitting device to prevent damage to the organic light emitting device; And an upper substrate formed on the thin-film encapsulation layer and sealing the thin-encapsulation layer from the outside.

According to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display, including: forming an organic light emitting diode on a lower substrate; Depositing a lower inorganic layer, an organic layer, and an upper inorganic layer on the colored refiner layer in order to form a thin film encapsulation layer; And forming a color refiner between the lower substrate and the upper substrate by using a laser transfer method, wherein the upper substrate and the upper substrate are formed on the thin film encapsulation layer.

According to the present invention, it is possible to reduce the interval between the organic light emitting diode and the color refiner, thereby preventing light leakage between pixels.

In addition, according to the present invention, it is possible to realize a high-resolution organic light emitting display by preventing inter pixel light leakage.

1 is a cross-sectional view illustrating a conventional organic light emitting display device;
2 is a cross-sectional view illustrating an organic light emitting display device according to an embodiment of the present invention;
3 is a cross-sectional view illustrating a method of manufacturing a color refiner of an organic light emitting display according to an exemplary embodiment of the present invention;
4 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention;
5 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention; And
6 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2, an organic light emitting display according to an exemplary embodiment of the present invention includes a lower substrate 201, an upper substrate 202, an organic light emitting diode 210, a buffer layer 220, (230) and a thin film encapsulation layer (240).

First, the lower substrate 201 may be formed of glass, a transparent flexible material, or an opaque insulating material. The transparent flexible material may be polyimide, polyetherimide (PEI), and polyethyeleneterephthalate (PET).

Next, the organic light emitting device 210 is formed on the lower substrate 201. The organic light emitting device 210 includes an anode electrode (not shown), an organic light emitting layer (not shown), and a cathode electrode (not shown). The anode electrode receives holes from a thin film transistor (not shown) and supplies the holes to the organic light emitting layer. The cathode electrode receives electrons from a power supply line (not shown) and transfers the electrons to the organic light emitting layer. The holes and the electrons are combined in the organic light emitting layer, and light of a band gap energy of the organic light emitting layer is emitted to the outside, so that each pixel emits light of a desired gradation.

The anode electrode is formed of a material having a large work function so as to supply holes. For example, it may be formed of a conductive oxide having a high work function and a conductive property. The conductive oxide is mostly transparent and includes, for example, indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO) .

The cathode electrode may be formed of any one of silver (Ag), magnesium (Mg), aluminum (Al), and copper (Cu) so as to supply electrons, . In addition, the cathode electrode 214 may be formed as a thin film to allow light to be emitted to the outside, and may be formed thin to a thickness of several hundreds of angstroms (A) or less.

The organic light emitting layer may be formed between the anode electrode and the cathode electrode, and may have a structure in which a plurality of organic light emitting layers emitting a plurality of colors of light are stacked.

More specifically, a hole injection layer may be formed between the organic light emitting layer and the anode electrode. The hole injection layer serves to smoothly supply holes from the anode electrode. Further, a hole transport layer may be further formed between the hole injection layer and the organic light emitting layer to facilitate the movement of holes.

On the contrary, an electron injection layer is formed between the organic light emitting layer and the cathode electrode, so that injection of electrons from the cathode electrode can be facilitated. Further, an electron transporting layer for facilitating the movement of electrons may be further formed between the electron injection layer and the organic light emission layer.

As described above, since the organic light emitting device 210 includes an organic light emitting layer that is weak to moisture, air, and high temperature, and the anode electrode and the cathode electrode, which are formed respectively below and above the organic light emitting layer, are formed of a thin conductive material, The organic luminescent layer can not be protected from moisture, air and high temperature. In particular, since the cathode electrode must be formed as thin as possible in order to improve the efficiency of light emitted to the outside in the top emission type, it is more difficult to protect the organic light emitting layer from the outside.

For this reason, a process requiring a high temperature on the organic light emitting device 210 is difficult, and a process for forming an organic film or an inorganic film using sputtering or chemical vapor deposition is limited.

Next, a buffer layer 220 is formed on the organic light emitting element 210. The buffer layer 220 may include an organic material layer formed of an organic material for planarizing the irregularities of the organic light emitting diode 210. For example, the buffer layer 220 may include photoacrography (PAC), which is commonly used to planarize the irregularities of the TFT substrate. The buffer layer 220 may include an inorganic layer formed of an inorganic material for protecting the cathode electrode. For example, any one of silicon nitride (SiNx), silicon oxide (SiOx), and aluminum oxide (AlOx). The buffer layer 220 may include both an inorganic material layer formed of the inorganic material and an organic material layer formed of the organic material. The inorganic layer may be formed on the cathode electrode of the organic light emitting diode 210, and the organic layer may be formed on the inorganic layer to planarize the organic light emitting diode 210.

Next, a color refiner layer 230 is formed on the buffer layer 220. The white light emitted from the organic light emitting layer may be converted into light of a desired color through the color refiner layer 230.

The color refiner layer 230 includes a black matrix BM and color refiner (W, R, G, B). First, a black matrix BM for defining each pixel is formed on the buffer layer 220 and color refiner (W, R, G, B) of white, red, green and blue is formed for each of the defined pixels . The pixel on which the white, red, green and blue color refiner (W, R, G, B) are formed becomes a unit to express the desired gradation.

The narrower the interval between the color repeller layer 230 and the organic light emitting device 210 is, the more advantageous is a high resolution implementation. The larger the distance between the color repiner layer 230 and the organic light emitting device 210, the greater the possibility that light leakage occurs to neighboring pixels. Therefore, it is necessary to reduce the interval between the color repeller layer 230 and the organic light emitting diode 210 in order to realize a high resolution.

However, as described above, since the organic light emitting device 210 may be damaged by moisture, air, and high temperature, and particularly, the process of forming the general color refiner layer 230 proceeds at a high temperature exceeding 200 ° C in part, It is difficult to form the color refiner layer 230 directly on the organic light emitting element 210 by using the general method of forming the color refiner layer 230. [ Therefore, a process of forming the color refiner layer 230 that can be performed at a low temperature is required. A detailed process of forming the color refiner layer 230 will be described with reference to FIG.

Next, a thin film encapsulation layer 240 is formed on the color refiner layer 230. The thin film encapsulation layer 240 includes a lower inorganic layer 241, an organic layer 242, and an upper inorganic layer 243.

First, the lower inorganic layer 241 is formed on the color refiner layer 230. The lower inorganic layer 241 can protect the color refiner layer 230 when the organic layer 242 is formed and at the same time can protect the organic layer 242 from moisture permeation from the outside and penetration of foreign matter. The lower inorganic layer 241 may include any one of, for example, silicon nitride (SiNx), silicon oxide (SiOx), and aluminum oxide (AlOx) Lt; / RTI > The lower inorganic layer 241 may be formed using chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD).

Next, an organic layer 242 is formed on the lower inorganic layer 241. The organic layer 242 may be formed of a material having a flat top surface irrespective of irregularities on the bottom. An epoxy-based polymer is used, and photoacrography (PAC) which is generally used when a planarizing layer is formed may be used. However, the present invention is not limited to the above description, All of the materials that are formed are usable. The organic layer 242 may be formed by spin coating or screen printing.

The organic layer 242 can flatten the irregularities of the color refiner layer 230 formed at the lower part to improve the film uniformity of the film formed on the upper surface and form a film having a uniform thickness throughout the film formation area. The organic layer 242 may be formed by flattening the foreign matter when the foreign matter is present on the lower inorganic layer 241 after the formation of the lower inorganic layer 241, And it is possible to prevent damage such as occurrence of lifting phenomenon due to low adhesion to the lower film.

Next, an upper inorganic layer 243 is formed on the organic layer 242. Since the organic layer 242 is smoothly formed by removing irregularities and irregularities due to irregularities and foreign substances in the lower structure, the upper inorganic layer 243 can be formed with high film uniformity without lifting. Since the upper inorganic layer 243 is formed at the uppermost end of the thin film sealing layer 240, the sealing and sealing effect from the outside must be excellent. Therefore, the organic layer 242 is formed before the upper inorganic layer 243 is formed to planarize the lower layer.

The upper inorganic layer 243 may include any one of silicon nitride (SiNx), silicon oxide (SiOx), and aluminum oxide (AlOx) in the same manner as the lower inorganic layer 241, It may be the same material as the forming material when it is formed of an inorganic material.

As described above, the upper inorganic layer 243, the lower inorganic layer 241, and the buffer layer are formed of the same material to form the same structure, but the manufacturing efficiency can be improved while the manufacturing cost can be reduced.

Next, the upper substrate 202 may be formed on the thin film encapsulation layer 240. [ The upper substrate 202 protects the organic light emitting device 210 from external moisture, air, and foreign substances together with the thin film encapsulation layer 240, and can seal the inside thereof. The upper substrate 202 may be formed of the same material as the lower substrate 201.

3 is a cross-sectional view illustrating a method of manufacturing a color refiner layer according to an embodiment of the present invention.

As shown in FIG. 3, the color refiner layer 230 according to an embodiment of the present invention uses a laser transfer method, not a conventional photolithography method.

Conventionally, a color refiner layer 230 is formed using a photolithography process. The color refiner (W, R, G, B) is formed of a photoresist having a respective color. For example, a red color refiner (R) is formed on a substrate on which a black matrix (BM) is formed. For example, a spin coating method can be used. In the spin coating method, a liquid material is dropped on a substrate, and then the substrate is rotated to uniformly form a thin film on the entire surface of the substrate. Thereafter, the red color refiner R is left only in the red pixel through exposure and development, and the red color refiner R formed in the remaining pixels is removed to form the red color refiner R in the red pixel.

In this process, a pre-baking process is performed at a stage before the exposure process, wherein the process temperature is about 60 ° C to 120 ° C. Generally, the organic material of the organic light emitting diode 210 is damaged at 100 ° C or higher. The temperature is not so high as to damage the organic light emitting diode 210 significantly. However, after the development process, the process temperature in the post-baking process is a temperature at which the organic light emitting device 210 can be damaged by the high temperature at 200 ° C to 230 ° C. In addition, tetramethylammonium hydroxide (TMAH) is used as a developing solution in the development process, and tetramethylammonium hydroxide may be a basic solution based on water and may damage the organic light emitting device 210.

Therefore, when the color refiner layer 230 is directly formed on the organic light emitting device 210 by the process of forming the general color refiner layer 230 as described above, the organic light emitting device 210 is damaged, The organic light emitting diode 210 may not operate normally and the lifetime of the OLED 210 may be shortened.

In the present invention, the laser transfer method used for forming the color refiner layer 230 is a method used when the organic light emitting layer is formed for each pixel. If the color repeller layer 230 is formed using the laser transfer method, the organic light emitting device 210 may not be damaged because it is possible to perform the low temperature process.

Fig. 3 shows a process of forming a red color refiner (R) using a laser transfer method. In order to perform the laser transfer method, a transfer film 260 is required. The base film 261, the release layer 262, and the photosensitive layer 263 may be sequentially formed on the transfer film. The red color refiner R is formed in such a manner that the photosensitive layer 263 is opposed to the organic light emitting element 210 and then the laser is transferred onto the base substrate 261 to transfer the photosensitive layer 263 to a desired position . At this time, the process atmosphere in the chamber includes nitrogen gas. When the photosensitive layer 263 is transferred using the laser transfer method, the organic light emitting device 210 may be damaged due to a local temperature increase. However, by flowing nitrogen gas during the process, Damage can be prevented.

4 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

4, an organic light emitting display according to another embodiment of the present invention includes a lower substrate 201, an upper substrate 202, an organic light emitting device 210 formed on the lower substrate 201, And a color refiner layer 230 formed between the thin film encapsulation layers 240. [

The embodiment of FIG. 4 is characterized in that a color refiner layer 230 is formed between the thin film encapsulation layers 240, unlike the embodiment shown in FIG. The color refiner layer 230 may include a red color refiner R, a green color refiner G, a blue color refiner B and a white color refiner W having different heights from each other. In this case, planarization is required before the thin film is formed on the color refiner layer 230, and the organic layer 242 of the thin film encapsulation layer 240 can flatten the color refiner (W, R, G, B). That is, in the embodiment of FIG. 2, the buffer layer 220 can be omitted, thereby reducing the number of processes.

That is, the organic light emitting device 210 is formed on the lower substrate 201 and the lower inorganic layer 241 of the thin film encapsulation layer 240 is formed without forming the buffer layer 220 on the organic light emitting device 210. [ . Since the buffer layer 220 and the lower inorganic layer 241 can be formed of the same material, the buffer layer 220 can be replaced with the lower inorganic layer 241 of the thin film encapsulation layer 240. After the black matrix BM is formed on the lower inorganic layer 241, the color refiner (W, R, G, B) is transferred for each pixel defined by the black matrix BM using the laser transfer method A color refiner layer 230 is formed. Here, the white colored refiner (W) may be formed of a transparent material, or may leave an empty space without forming any material.

Next, an organic layer 242 is formed on the color refiner layer 230. The organic layer 242 may be formed by spin coating or screen printing, and the irregularities of the color refiner layer 230 may be flattened. The organic layer 242 may be formed of an epoxy-based polymer or a photo acrylic.

Next, the upper inorganic layer 243 may be formed on the organic layer 242. [ The upper inorganic layer 243 protects the organic layer 242, the color refiner layer 230, and the organic light emitting diode 210 formed below.

The upper inorganic layer 243 and the lower inorganic layer 241 are formed of the same material to form the same structure, but the manufacturing cost can be reduced while increasing the efficiency of the process.

Next, the upper substrate 202 may be formed on the thin film encapsulation layer 240. [ The upper substrate 202 protects the organic light emitting device 210 from external moisture, air, and foreign substances together with the thin film encapsulation layer 240, and can seal the inside thereof. The upper substrate 202 may be formed of the same material as the lower substrate 201.

5 is a cross-sectional view illustrating an organic light emitting display according to another embodiment of the present invention.

5, the organic light emitting display according to another embodiment of the present invention includes a thin film encapsulation layer 240 without a lower inorganic layer 241.

After the organic light emitting device 210 is formed on the lower substrate 201, the color refiner layer 230 is directly formed without the lower inorganic layer 241 of the buffer layer 220 or the thin film encapsulation layer 240 This is a feature of this embodiment. Since the color refiner layer 230 is formed through a laser transfer method in a nitrogen atmosphere as described above, it can be formed without damaging the organic light emitting layer of the organic light emitting element 210. Accordingly, the color refiner layer 230 can be formed directly without a separate protective layer such as the buffer layer 220.

First, a black matrix BM is formed on a cathode electrode corresponding to a bank layer (not shown) of the organic light emitting diode 210 to define each pixel, and then a color refiner (W, R, G, and B can be formed. In this case, since there is no gap between the organic light emitting diode 210 and the color refiner layer 230, it is possible to manufacture a high-resolution full color organic light emitting display device to be implemented.

6 is a cross-sectional view illustrating an organic light emitting display device according to another embodiment of the present invention.

As shown in FIG. 6, an organic light emitting display according to an exemplary embodiment of the present invention includes a color refiner layer 230 formed in an organic light emitting device 210.

6, the color refiner layer 230 is formed between the cathode electrode and the organic light emitting layer to prevent the gap between the organic light emitting device 210 and the color refiner layer 230 from occurring, Thereby making it possible to manufacture a display device.

Here, the black matrix BM of the color refiner layer 230 may be formed of a conductive material or may be formed of a conductive material to smooth the flow of electrons between the cathode electrode and the organic light emitting layer, and the color refiner (W, R, G , B) can also help to flow electrons between the cathode electrode and the organic light emitting layer. That is, the color refiner layer 230 may replace the electron injection layer or the electron transport layer.

As described above, the cell gap can be reduced or the gap between the organic light emitting diode 210 and the color refiner layer 230 can be prevented from being generated. Thus, light emitted from one pixel can be transmitted to the color refiner W, R, G, and B), it is possible to accurately display the gradation, and the size of the pixel can be further reduced, thereby realizing a high-resolution organic light emitting display.

In this case, the distance between the organic light emitting layer 210 and the color refiner (W, R, G, B) of the organic light emitting diode 210 is set to 10 μm or less. In a stripe structure of the pixel structure, , And a resolution of up to 443 ppi can be achieved when the cell gap is 6 μm.

In a quad structure of the pixel structure, a resolution of up to 396 ppi can be realized when the cell gap is 8 μm.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

201: upper substrate 202: lower substrate
210: organic light emitting diode 220: buffer layer
230: color refiner layer 240: thin film encapsulation layer
241: lower inorganic layer 242: organic layer
243: upper inorganic layer W, R, G, B: colored refiner
BM: Black Matrix

Claims (21)

An organic light emitting element formed on the lower substrate;
A color refiner layer directly formed on the organic light emitting element and in contact with the organic light emitting element, the color refiner including a black matrix and a color refiner formed on a pixel defined by the black matrix;
A thin film encapsulation layer formed on the color refiner layer and planarizing the color refiner layer to prevent damage to the organic light emitting element; And
And an upper substrate formed on the thin-film encapsulation layer and sealing the thin-encapsulation layer from the outside.
delete delete The method according to claim 1,
Wherein the thin film encapsulation layer comprises an organic layer formed on the color refiner layer and planarizing the color refiner layer.
5. The method of claim 4,
Wherein the organic layer is an epoxy-based polymer.
5. The method of claim 4,
Wherein the thin film encapsulation layer further comprises an upper inorganic layer formed between the organic layer and the upper substrate.
The method according to claim 6,
Wherein the thin film encapsulation layer further comprises at least one auxiliary organic layer and at least one auxiliary inorganic layer between the upper inorganic layer and the organic layer and the auxiliary organic layer and the auxiliary inorganic layer are alternately formed. Emitting display device.
The method according to claim 6,
Wherein the thin film encapsulation layer further comprises a lower inorganic layer formed between the color refiner layer and the organic layer.
9. The method of claim 8,
Wherein the upper inorganic layer and the lower inorganic layer comprise one of silicon nitride (SiNx), silicon oxide (SiOx), and aluminum oxide (AlOx).
delete delete delete An organic light emitting element formed on the lower substrate;
A color refiner layer formed inside the organic light emitting device, the color refiner including a black matrix and a color refiner formed in a pixel defined by the black matrix;
A thin film encapsulation layer formed on the organic light emitting device to prevent damage to the organic light emitting device; And
And an upper substrate formed on the thin film sealing layer to seal the thin film sealing layer from the outside,
Wherein the black matrix and the color refiner of the color refiner layer are made of a conductive material and inject and inject electrons into the organic light emitting layer of the organic light emitting device.
14. The method of claim 13,
Wherein the organic light emitting device includes an anode electrode, an organic light emitting layer, and a cathode electrode, and the color refiner layer is formed between the organic light emitting layer and the cathode electrode.
delete Forming an organic light emitting element on the lower substrate;
Directly forming a color refiner layer disposed on a pixel defined by the black matrix and the black matrix on the organic light emitting element so as to be in contact with the top surface of the organic light emitting element;
Depositing a lower inorganic layer, an organic layer, and an upper inorganic layer on the colored refiner layer in order to form a thin film encapsulation layer; And
And bonding the upper substrate formed on the thin-film encapsulation layer to the upper substrate.
17. The method of claim 16,
Wherein forming the color refiner layer comprises:
Forming a black matrix using laser transfer in nitrogen gas; And
And transferring the color refiner to a pixel defined by the black matrix using a laser transfer method in a nitrogen gas. delete 17. The method of claim 16,
Wherein the color refiner layer is formed between the organic light emitting device and the thin film encapsulation layer.
delete Forming a color refiner layer and an organic light emitting device including an anode electrode, an organic light emitting layer, and a cathode electrode on a lower substrate;
Forming a thin film sealing layer by sequentially laminating a lower inorganic layer, an organic layer, and an upper inorganic layer on the organic light emitting element; And
And bonding the upper substrate formed on the thin film sealing layer,
The forming of the organic light emitting device and the color refiner layer may include forming an anode electrode, forming an organic light emitting layer on the anode electrode, forming a conductive black matrix on the organic light emitting layer, Applying a color refiner by a laser transfer method, and forming a cathode electrode on the color refiner.

Images