KR101953433B1 - apparatus set for producing warpage of ceramic substrate and method for producing warpage of ceramic substrate using there of - Google Patents

apparatus set for producing warpage of ceramic substrate and method for producing warpage of ceramic substrate using there of Download PDF

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KR101953433B1
KR101953433B1 KR1020160027260A KR20160027260A KR101953433B1 KR 101953433 B1 KR101953433 B1 KR 101953433B1 KR 1020160027260 A KR1020160027260 A KR 1020160027260A KR 20160027260 A KR20160027260 A KR 20160027260A KR 101953433 B1 KR101953433 B1 KR 101953433B1
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South Korea
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tool material
ceramic substrate
convex portion
concave portion
unit
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KR1020160027260A
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Korean (ko)
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KR20170104327A (en
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홍주섭
소장미
장원철
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주식회사 케이씨씨
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Priority to KR1020160027260A priority Critical patent/KR101953433B1/en
Priority to DE202017101226.3U priority patent/DE202017101226U1/en
Priority to CN201720214964.5U priority patent/CN206672901U/en
Publication of KR20170104327A publication Critical patent/KR20170104327A/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0014—Shaping of the substrate, e.g. by moulding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09018—Rigid curved substrate

Abstract

The present invention relates to a supporting tool material having a convex portion or a concave portion on one side thereof and a concave portion or convex portion corresponding to the convex portion or concave portion of the receiving tool material and a load tool material formed on the side of the convex portion or the concave portion of the receiving tool material And a second set of tools for generating a deflection of the ceramic substrate.
According to another aspect of the present invention, there is provided a method of manufacturing a ceramic substrate, comprising the steps of: laminating a unit including at least one ceramic substrate on a supporting tool material having a convex portion or a concave portion on one side; And a step of forming a laminated unit body by arranging a load tool material formed on the side of the unit corresponding to the concave portion or the convex portion corresponding to the convex portion, and performing a heat treatment.

Description

[0001] The present invention relates to a tool set for generating warpage of a ceramic substrate and a method for generating warpage of the ceramic substrate using the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a tool set for generating a warp of a ceramic substrate and a method of generating a warp of the ceramic substrate using the tool set.

A so-called metal-bonded ceramic substrate, which is conventionally used as an electronic circuit substrate by bonding a metal such as copper (Cu) or aluminum (Al) to an insulating ceramic substrate such as alumina (Al 2 O 3 ) And are widely used as component parts of semiconductor devices. In recent years, due to the development of electronic technology, there has been actively carried out researches for joining a metal plate to a Si 3 N 4 ceramic substrate for the purpose of improving heat dissipation characteristics and mechanical characteristics of a metal bonded ceramic substrate with high integration and slimness reduction of electronic products.

A method of bonding a ceramic substrate and a metal plate integrally, comprising the steps of placing a metal plate such as copper in contact with a ceramic substrate, heating the ceramic substrate to a temperature lower than the melting point of copper (1083 캜) and higher than the eutectic point of copper (1065 캜) A direct bonding copper (DBC) method has been developed and commercialized. In addition, a ceramic circuit board manufactured by an active metal method in which a metal circuit board is bonded through a filler layer is also developed and applied to a power semiconductor which requires high reliability.

The metal bonded ceramic substrate is manufactured by bonding a metal plate to a ceramic substrate and chemically etching the metal plate to form a desired circuit pattern. Accordingly, a circuit substrate having a plurality of identical circuit patterns can be manufactured at the same time. The manufactured circuit board is finally cut into individual products through laser machining and used.

In general, a metal bonded ceramic substrate is cut into individual circuit boards and then a semiconductor is mounted. However, in order to improve productivity and work efficiency, a composite array circuit board having the same circuit pattern I am trying. At this time, the composite array circuit board should be applied in a state in which the cutting lines are processed by the laser. However, since the metal bonded ceramic substrate of the composite array has a larger size than the individual circuit substrate, it is difficult to transfer the process through automation process or vacuum fixation for mass production due to the influence of substrate bending, There is also a high probability of failure. Therefore, studies have been actively made to improve warpage of the composite array metal bonded ceramic substrate to solve such a problem.

Korean Patent Laid-Open Publication No. 10-1280250 Japanese Laid-Open Patent Application No. 2011-216533

SUMMARY OF THE INVENTION It is an object of the present invention to provide a ceramic substrate manufacturing apparatus and a ceramic substrate manufacturing method for meeting the above-mentioned demand.

In order to solve the above-described problems, the present invention is characterized in that a supporting tool material having a convex portion or a concave portion on one side thereof and a concave portion or a convex portion corresponding to the convex portion or the concave portion of the receiving tool material, And a load tool material formed on the side of the ceramic substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a ceramic substrate, comprising the steps of: laminating a unit including at least one ceramic substrate on a supporting tool material having a convex portion or a concave portion on one side; Forming a laminated unit body by disposing a load tool material formed on a side of the unit corresponding to the concave portion or the convex portion corresponding to the convex portion; and performing a heat treatment.

As described above, according to the tool set for deflection of ceramic substrate according to the present invention and the deflection generation method of the ceramic substrate using the same, deflection can be artificially generated in the sintered ceramic substrate, and the warped ceramic It is possible to cancel the warp caused by the difference in the stress generated at the interface between the ceramic and the metal layer when the substrate and the metal layer are bonded to each other, so that warping generated in the conventional metal bonded substrate can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a set of tools for warping a ceramic substrate according to one embodiment of the present invention.
FIG. 2 illustrates a set of tools for warping a ceramic substrate according to another embodiment of the present invention.
FIG. 3 is a view showing a unit for bending a ceramic substrate according to an embodiment of the present invention.
FIG. 4 is a view showing a unit for bending a ceramic substrate according to another embodiment of the present invention.
5 is a view showing a unit for warpage of ceramic substrate according to another embodiment of the present invention.

If there is a warp in the ceramic substrate used for the metal bonded ceramic substrate, the bonding of the metal mounted on the ceramic substrate may not be easy, so that the working efficiency and the productivity of the metal bonded ceramic substrate are lowered. Even if the warpage of the ceramic substrate is improved, the occurrence of warpage of the metal bonded substrate generated after the metal layer is bonded to the ceramic substrate may cause problems in the process of bonding semiconductor devices and other electronic parts. The metal layer used for the electronic circuit pattern is attached to the upper surface or the lower surface of the ceramic substrate in a cross section, or is used as an upper surface or a lower surface of the ceramic substrate, It is attached to the bottom surface and used. At this time, the metal layer has a shape in which a plurality of the same circuit pattern regions are repeatedly arranged in rows and columns in the entire area of the substrate (hereinafter, the substrate on which the metal layer is formed is called a " metal bonded substrate ").

When the metal layer is bonded to the upper surface and / or the lower surface of the ceramic substrate, the outer surface of the ceramic substrate becomes concave and the outer surface of the copper layer used as the metal layer is convex . In the cooled state after the completion of the bonding, contrary to the above-mentioned high temperature condition, the contraction of the copper occurs more largely, so that the outer surface of the copper layer becomes concave and the outer surface of the ceramic substrate becomes convex. Thus, when the copper layer is successively bonded to the opposite surface, the above process is repeated, and the warping of the metal bonded substrate is determined. Therefore, the warping state of the initial ceramic substrate before the bonding progress has a great influence on the warping of the metal bonded substrate after bonding.

Additionally, the element that affects the warping of the metal bonded substrate may be the patterning of the ceramic substrate. The metal bonded substrate forms a pattern constituting the circuit after bonding. Therefore, even though a flat metal bonded substrate is formed by applying the same metal layer at the time of bonding, since the copper layer area on the pattern forming surface is smaller than the metal layer on which the pattern is not formed after the etching process for forming the pattern, And the surface on which the pattern is formed becomes convex. That is, even if the warpage of the ceramic substrate is flat, warpage occurs in pattern formation after the metal layer is bonded, and the warpage of the metal bonded substrate increases as the amount of etching increases. The deflection caused by the pattern formation is affected more by the thinner the thickness of the ceramic substrate and by the thicker the thickness of the ceramic substrate, the influence is decreased. In the experiment related to the embodiment of the present invention, when the thickness of the ceramic substrate was less than 0.5 mm, the pattern formation surface of the copper layer was greatly influenced, and when the thickness was 0.5 mm or more, the effect of warping of the ceramic substrate was dominant. Industrial electronic products in which metal bonded substrates are used as well as electric power semiconductor fields are preferred to ceramic substrate thicknesses of less than 0.5 mm due to the thin and light tendency of electronic products. Therefore, in the embodiment of the present invention, .

As a result of repeated research, the present inventors have found that, when a ceramic substrate having a thickness of less than 0.5 mm is applied to a metal bonded substrate, deflection caused by the formation of a copper layer pattern formed as a metal layer can be reversely used.

Specifically, a certain amount of warpage is artificially applied using a tool material so that warpage exists in the ceramic substrate in the direction opposite to the deflection direction of the metal bonded substrate. Considering that the bending occurs to the metal due to the stress generated at the interface between the ceramic and the metal at the time of ceramic-metal bonding, when the ceramic substrate having the bending in the opposite direction of bending is used, the bending is minimized It is possible to manufacture a substrate. When a sintered ceramic substrate is subjected to heat treatment at an appropriate temperature after lamination by applying a curved tool material, a certain amount of uniform warping can be applied to the ceramic substrate.

For this reason, in order to generate uniform warpage on the ceramic substrate, the present invention provides a tool set for warping of a ceramic substrate, comprising a supporting tool material having a convex portion or a concave portion on one side and a convex portion or a concave portion of the supporting tool material The recessed portion or the raised portion may include a load tool material formed on the side of the convex portion or the concave portion of the receiving tool material.

Further, in the tool set for ceramic substrate bending of the present invention, a concave portion or a convex portion corresponding to the convex portion or the concave portion of the receiving tool material is formed on the opposite side of the convex portion or the concave portion of the receiving tool material, And an intermediate tool material having a convex portion or a concave portion formed thereon.

The supporting tool material 101 has a curved shape to prevent direct contact with the ceramic burner during the heat treatment of the ceramic substrate and to cause warping of the ceramic substrate.

As described later, the intermediate tool material 103 separates the units from each other during the reheating process of one or more units including a plurality of ceramic substrates, and can more easily cause warpage.

The load tool material 102 can load the ceramic substrate at a high temperature to form a warp of the ceramic substrate. The material of the load tool material 102 can be applied to ceramic materials which are resistant to deformation at high temperatures and have high thermal conductivity.

In another aspect of the present invention, a method of generating warpage of a ceramic substrate comprises laminating a unit comprising at least one ceramic substrate on a supporting tool material having convex or concave portions on one side thereof, Forming a laminated unit body by disposing a load tool material formed on the unit side with a concave portion or a convex portion corresponding to the convex portion or the concave portion; and performing a heat treatment.

Further, in the method of producing a ceramic substrate according to the present invention, in the step of stacking the units, one unit is stacked, and concave or convex portions corresponding to convex portions or concave portions of the receiving tool material, And an intermediate tool material having a convex or concave portion corresponding to the intermediate tool material is formed on the intermediate tool material, and another unit is stacked on the intermediate tool material.

Specifically, when the supporting tool material is a convex portion in the unit body in the tool set and the deflection generating method for ceramic substrate bending according to the present invention, the load tool material forms a concave portion, and when the supporting tool material is a concave portion, In the following description, it is described that the supporting tool material has the convex portion and the load tool material has the concave portion. However, the present invention is not limited to the following description.

Referring to FIG. 1, a ceramic substrate warpage generating tool set 100 according to an embodiment of the present invention includes a support tool material 101 having a convex portion on one side thereof, and a concave portion corresponding to the convex portion of the support tool material. And a load tool material 102 formed on the opposite side of the convex portion of the support tool material.

According to another embodiment of the present invention, the tool set 100 further includes an intermediate tool material 103, and the intermediate tool material 103 corresponds to the convex portion of the tool material 101 May be formed on the opposite side of the convex portion of the supporting tool material 101 and the concave portion corresponding to the convex portion on the opposite side.

The convex portion or the concave portion formed on the supporting tool material 101, the load tool material 102 and the intermediate tool material 103 may have a bending amount in the thickness direction of 0.3% to 0.5% with respect to the long axis length, The 'bending' in the present invention means the percentage of the length deformation amount in the thickness direction with respect to the longitudinal direction of each member.

The support tool material 101, the load tool material 102, and the intermediate tool material 103 may include at least one selected from the group consisting of Al 2 O 3 , SiC, and Si 3 N 4 .

At least one sintered ceramic substrate having a thickness of 0.2 mm to 1.0 mm or less is disposed between the support tool material 101 and the load tool material 102 according to an embodiment of the present invention, Heating may be performed to cause warping in the ceramic substrate. In addition, for the sake of convenience of the process, 20 to 50 sheets of the ceramic substrate may be stacked, and as shown in FIG. 2, 20 to 50 stacked ceramic substrates may be used as one unit, The intermediate tool material 103 may be laminated between the unit and the unit.

3, a method of generating a flexure of a ceramic substrate according to an embodiment of the present invention includes a unit 204 including at least one ceramic substrate on a supporting tool 201 having a convex portion on one side, And a load instrument member 203 having a concave portion corresponding to the convex portion of the receiving tool material 201 and formed on the unit 204 side is disposed on the unit 204 to form the laminated unit 200, , And a step of performing a heat treatment.

4, in the step of laminating the unit 204, one unit 204 is laminated, and the convex portion of the supporting tool material 201 is folded, The intermediate tool material 202 having the concave portion corresponding to the one unit 204 and the convex portion corresponding thereto formed on the opposite side thereof is stacked on the unit 204 and the intermediate tool material 202 And then stacking another unit 204 on top of the other.

5, three or more of the units 204 may be included in the laminated unit 200. In Figs. 4 to 5, the same reference numerals as those in Fig. 3 denote the same members showing the same functions.

The support tool material 201, the intermediate tool material 202, and the load tool material 203 may be the same or different materials, and the support tool material and intermediate tool material may be Al 2 O 3 , SiC, and Si It may be one containing one or more selected from the group consisting of 3 N 4.

In addition, the load tool material may include at least one selected from the group consisting of Al 2 O 3 , SiC, and Si 3 N 4 .

The ceramic substrate included in the unit 204 may be in the form of a plate having a thickness of 0.2 mm to 1.0 mm, and the ceramic substrate is selected from the group consisting of Al 2 O 3 , AlN, and Si 3 N 4 And may be included in the unit 204 in a laminated form of 5 to 100 sheets and may be contained in the unit 204 in the form of 20 to 40 sheets in a laminated form for the sake of process efficiency Lt; / RTI > The material of the load tool material 203 used in the heat treatment of the ceramic substrate may be a ceramic material resistant to deformation at high temperature and high in thermal conductivity.

During the heat treatment, the weight of the load tool material 203 can be set to 2 kg to 10 kg. If the weight of the load tool material 203 is less than 2 kg, the pressure applied to the ceramic substrate may be too low to warp smoothly. If the weight of the load tool material 203 exceeds 10 kg, The pressure applied to the ceramic substrate by the load becomes too high, and excessive stress may be applied to the ceramic substrate, which may not be suitable for occurrence of warping in a desired range.

The support tool material 201, the intermediate tool material 202, and the load tool material 203 may have the same width or width as the ceramic substrate included in the unit 204 or the same width.

The supporting tool material 201 and the intermediate tool material 202 are preferably made of a ceramic material resistant to deformation at a high temperature and at least one selected from the group consisting of Al 2 O 3 , SiC, and Si 3 N 4 According to an embodiment of the present invention, may include Al 2 O 3 . The support tool material 201 and the intermediate tool material 202 may have a thickness of 2 to 20 mm.

If the thickness is less than 2 mm, the tool material is not good in terms of durability, and if the thickness is more than 20 mm, stress may be applied to the ceramic substrate due to excessive load, which may not be appropriate.

The heat treatment may be performed at a temperature of 1200 to 1500 ° C. If the heat treatment temperature is lower than 1200 ° C, the ceramic substrate may not easily warp. If the heat treatment temperature is higher than 1500 ° C, And may be cracked or broken.

Specifically, the heating according to an embodiment of the present invention may be a step of disposing the unit body in a heating furnace, raising the temperature from 1200 ° C to 1500 ° C from room temperature, holding it for 2 to 8 hours, have.

In the ceramic substrate according to the present invention, the warp of the ceramic substrate may be 0.3% to 0.5% in the thickness direction with respect to the long axis length.

Hereinafter, embodiments of the present invention will be described, but the scope of the present invention is not limited to the following embodiments.

Fabrication of ceramic substrate

As the ceramic substrate, an Al 2 O 3 substrate having a thickness of 0.38 mm and a major axis length of 190 mm obtained by sintering a formed body manufactured by a tape casting method at a temperature of 1600 ° C or higher was used.

Heating Ceramic Substrate Using Tool Set

Example 1

30 units of the ceramic substrates were stacked to form a unit. Then, a supporting tool material having the same width and width as the ceramic substrate, the unit and the load tool material were prepared and the unit body was formed in the same sequence as shown in FIG.

Here, the thickness of the support tool material is 5 mm and it includes Al 2 O 3 , and the load tool material includes SiC and its weight is 3 kg. Wherein the support tool material has a convex shape, a bending amount in the thickness direction of the major axis length is 0.4%, the load tool material is concave, opposes the convex shape of the support tool material, and the bending amount in the thickness direction is 0.4% .

As the heating step, the unit was placed in a heating furnace, and the temperature was raised from room temperature to 1400 DEG C, and then the temperature was maintained for 4 hours. Thereafter, cooling was performed gradually, and the heating process was stopped after reaching room temperature. Thereafter, the unit body was disassembled to obtain the ceramic substrate of Example 1.

Example 2

The same heating step was carried out after forming the unit body in the same manner as in Example 1 except that the weight of the load tool material was changed to 7 kg, thereby obtaining a ceramic substrate.

Example 3

The same heating step was carried out after forming the unit body in the same manner as in Example 1 except that the weight of the load tool material was changed to 10 kg, thereby obtaining a ceramic substrate.

Example 4

The same heating step was carried out after forming the unit body in the same manner as in Example 1, except that the amount of warping of the supporting tool material and the load tool material was 0.3%, thereby obtaining a ceramic substrate.

Comparative Examples 1 to 3

Comparative Examples 1 and 2 were carried out in the same manner as in Example 1 except that the amount of bending of the support tool material and the load tool material and the weight of the load tool material were set as shown in Table 1, . In the case of Comparative Example 3, heat treatment was not performed.

Formation of metal bonded substrate

Examples 5 to 8 and Comparative Examples 4 to 6

Using the ceramic substrates prepared in Examples 1 to 4 and Comparative Examples 1 to 3, a copper metal plate having a thickness of 0.3 mm was placed in contact with the ceramic substrate, and then a temperature of 1065 to 1200 ° C and nitrogen A direct bonding (DCB) was applied to both surfaces of the ceramic substrate by heating in a reducing atmosphere to prepare a metal bonded alumina substrate having a pattern surface on one side.

Test Example

Flatness Measurement and Analysis System, TherMoir (Model PS200) was used as a bending measuring instrument.

The warpage was measured by preparing ten products for the ceramic substrate or the metal bonded ceramic substrate manufactured in each of the examples and the comparative examples, and measuring the degree of warpage to calculate an average value.

Table 1 shows the warpage size (mm) of the ceramic substrate before and after the heat treatment, and Table 2 shows the warpage size (mm) of the metal bonded ceramic substrate after the metal bonding process of the ceramic substrate with the deflection difference .

division Example 1 Example 2 Example 3 Example 4 Comparative Example 1
Comparative Example 2
Comparative Example 3 Re-weighing tool
(Based on the total weight of the ceramic substrate) 3kg 7kg 10kg 3kg 1kg 12kg 0kg Rest tool material, and load tool re-bending amount 0.4% 0.4% 0.4% 0.3% 0.4% 0.4% Average amount of bending of ceramic substrate (mm) 0.21 0.21 0.21 0.21 0.21 0.21 0.21 After heat treatment using the unit
Average amount of warpage versus long axis length
(Ceramic substrate 190 mm) 0.39% 0.41% 0.46% 0.31% 0.25% 0.53% none

division Example 5 Example 6 Example 7 Example 8 Comparative Example 1 Compare to 2 Comparative Example 3 Re-weighing tool
(Based on the total weight of the ceramic substrate) 3kg 7kg 10kg 3kg 1kg 12kg 0kg Resting tool re-bending amount 0.4% 0.4% 0.4% 0.3% 0.4% 0.4% . Average deflection of metal bonded substrate (mm) +0.127
+0.235 +0.407 +0.313 +0.594 (-) 0.231 +0.708

In the mean value of the bending amount of the metal bonded substrate in Table 2, the sign (+, -) means convex in the direction of formation of the pattern surface when + is positive, and convex in the direction opposite to the formation of the pattern surface when -.

As shown in Table 1 and Table 2, the deflection of the ceramic substrate is required when the load of the load tool material is 3 kg to 10 kg. When the warpage of the ceramic substrate is less than 0.3%, the warpage of the metal bonded substrate is not improved. It can be confirmed that the warpage of the metal bonded substrate is minimized when the warpage of the substrate is formed in the opposite direction and the warpage of the ceramic substrate is 0.3 to 0.5%.

100 Tool set for bending of ceramic substrate
101 base tool material
102 Load tool material
103 intermediate tool material
200 laminated unit
201 Support tool material
202 intermediate tool material
203 Load tool material
204 units

Claims (12)

(Al 2 O 3 ) or an aluminum nitride (AlN) ceramic substrate having a thickness of 0.38 mm and a 0.3 mm thick copper (Cu) A tool set for generating a warp of a ceramic substrate for producing a warped ceramic substrate before the metal plate is bonded,
A supporting tool material having a convex portion or a concave portion on one side thereof; And
And a load tool material formed of SiC or Si 3 N 4 , wherein a concave portion or a convex portion corresponding to the convex portion or the concave portion of the receiving tool material is formed on the side of the convex portion or the concave portion of the receiving tool material,
An intermediate tool material in which a concave portion or a convex portion corresponding to the convex portion or the concave portion of the receiving tool material is formed on the side opposite to the convex portion or the concave portion of the receiving tool material and the convex portion or the concave portion corresponding thereto is formed on the opposite side Including,
Wherein a convex portion or a concave portion formed in the support tool material, the load tool material, and the intermediate tool material has an amount of bending of 0.3% to 0.5% in the thickness direction, as compared with the long axis length. delete delete The method according to claim 1,
Wherein the support tool material, intermediate tool material comprises at least one selected from the group consisting of Al 2 O 3 , SiC, and Si 3 N 4 . (Al 2 O 3 ) or an aluminum nitride (AlN) ceramic substrate having a thickness of 0.38 mm and a 0.3 mm thick copper (Cu) A method for producing a warp of a ceramic substrate for producing a warped ceramic substrate before the metal plate is bonded,
Stacking a unit including at least one ceramic substrate on a supporting tool material having convex or concave portions on one side;
Forming a laminated unit member on the unit by disposing a load tool material including SiC or Si3N4 on the unit side, the concave portion or the convex portion corresponding to the convex portion or the concave portion of the receiving tool material; And
And performing a heat treatment,
Wherein the step of laminating the units comprises the steps of laminating one unit and forming concave or convex portions corresponding to convex portions or concave portions of the receiving tool material on the one unit side and forming convex portions or concave portions Stacking an intermediate tool material formed on said one unit and laminating another unit on said intermediate tool material,
Wherein a convex portion or a concave portion formed in the supporting tool material, the load tool material, and the intermediate tool material has a bending amount in the thickness direction of 0.3% to 0.5% with respect to the long axis length. delete The method of claim 5,
Wherein the supporting tool material, and the intermediate tool material and the load tool material are different in material. The method of claim 5,
Wherein the support tool material and the intermediate tool material comprise at least one selected from the group consisting of Al 2 O 3 , SiC, and Si 3 N 4 . delete The method of claim 5,
Wherein the weight of the load tool material is 3 kg to 10 kg based on the total weight of the ceramic substrate. The method of claim 5,
Wherein the support tool material, the intermediate tool material, and the load tool material have the same width and width as the ceramic substrate. The method of claim 5,
Wherein the heat treatment is performed at 1200 to 1500 占 폚.
KR1020160027260A 2016-03-07 2016-03-07 apparatus set for producing warpage of ceramic substrate and method for producing warpage of ceramic substrate using there of KR101953433B1 (en)

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KR1020160027260A KR101953433B1 (en) 2016-03-07 2016-03-07 apparatus set for producing warpage of ceramic substrate and method for producing warpage of ceramic substrate using there of
DE202017101226.3U DE202017101226U1 (en) 2016-03-07 2017-03-03 Device for creating curvature of a ceramic substrate
CN201720214964.5U CN206672901U (en) 2016-03-07 2017-03-07 For the device for the warpage for producing ceramic substrate

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044630A (en) * 1999-07-29 2001-02-16 Nec Corp Manufacture of multilayer printed wiring board and laminated device
JP2003273289A (en) * 2002-03-15 2003-09-26 Dowa Mining Co Ltd Ceramic circuit board and power module
JP2007129039A (en) * 2005-11-02 2007-05-24 Nippon Pillar Packing Co Ltd Fluorine resin printed circuit board and manufacturing method thereof
JP4581575B2 (en) * 2004-09-09 2010-11-17 株式会社村田製作所 Manufacturing method of plate-shaped ceramic body and load applying member for ceramic firing
JP2015076551A (en) * 2013-10-10 2015-04-20 三菱マテリアル株式会社 Substrate for power module with heat sink and method of manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19715540C2 (en) * 1997-04-15 2002-02-07 Curamik Electronics Gmbh Method of manufacturing a domed metal-ceramic substrate
JP5637719B2 (en) 2010-03-31 2014-12-10 Ｄｏｗａメタルテック株式会社 Method for manufacturing metal-ceramic bonded circuit board
KR101280250B1 (en) 2010-09-30 2013-07-05 주식회사 케이씨씨 Metal-bonded ceramic substrate
KR101639728B1 (en) 2014-08-25 2016-07-14 한국남동발전 주식회사 Manufacturing System of Light Weight Aggregate Using Bottom Ash

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044630A (en) * 1999-07-29 2001-02-16 Nec Corp Manufacture of multilayer printed wiring board and laminated device
JP2003273289A (en) * 2002-03-15 2003-09-26 Dowa Mining Co Ltd Ceramic circuit board and power module
JP4581575B2 (en) * 2004-09-09 2010-11-17 株式会社村田製作所 Manufacturing method of plate-shaped ceramic body and load applying member for ceramic firing
JP2007129039A (en) * 2005-11-02 2007-05-24 Nippon Pillar Packing Co Ltd Fluorine resin printed circuit board and manufacturing method thereof
JP2015076551A (en) * 2013-10-10 2015-04-20 三菱マテリアル株式会社 Substrate for power module with heat sink and method of manufacturing the same

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