KR101935002B1 - Space transformer for probe card, method for manufacturing thereof and probe card - Google Patents

Abstract

A method for manufacturing a space converter for a probe card includes the steps of preparing a first substrate connected to a probe pin, forming a plurality of first through holes in the first substrate, forming a first through hole, Forming a first conductive layer on a part of one side and a part of one side of the extended first substrate, preparing a second substrate connected to a pad of the printed circuit board, Forming a second conductive layer on the second through-hole, a part of one surface of the second substrate extending from the second through-hole and a part of the other surface, and a step of forming a second conductive layer on the first substrate and the second And connecting the substrate, wherein the first substrate and the second substrate may be silicon substrates.

Description

TECHNICAL FIELD [0001] The present invention relates to a space converter for a probe card, a method of manufacturing the same, and a probe card for the probe card.

The present invention relates to a space converter for a probe card, a method of manufacturing the same, and a probe card.

After the fabrication process of the semiconductor device is performed, an inspection process is performed to check the electrical characteristics of the semiconductor device. A probe card used in an inspection process generally includes a probe pin contacting a pad of a semiconductor device, a space transformer (ST) performing a pitch conversion between a probe pin and a printed circuit board, And an interposer that connects the circuit board and the spatial transducer.

The spatial transducer used in the conventional probe card is mainly composed of a multi-layer ceramic substrate (MLC) including a plurality of ceramic substrates. However, the multilayer ceramic substrate has a problem that the resistance is large due to a long wiring length. Also. Thermal deformation occurs depending on inspection conditions due to the difference in characteristics with respect to the object to be inspected, that is, the silicon substrate, and accordingly, each ceramic substrate is deformed such as twisting, thereby causing a defect in its own flatness.

Further, since the multilayer ceramic substrate is manufactured by stacking a plurality of ceramic layers, the manufacturing time is long and the manufacturing cost is high.

In order to solve the problems of the multilayer ceramic substrate as a space converter, a space converter in which a glass substrate and a plurality of polymer substrates are laminated is proposed (Prior Art 1). Also, a space converter in which a silicon substrate and a plurality of photoresist substrates are laminated is proposed (Prior Art 2).

Generally, due to the nature of the probe card, each component, in particular the spatial transducer, needs to have high rigidity. However, according to the spatial converters of the prior arts 1 and 2, there is a problem that the rigidity of the polymer substrate or the resin substrate is low and the durability of the probe card is weak.

According to the spatial converters of the prior arts 1 and 2, thermal deformation occurs on the interface between the glass substrate and the polymer substrate or between the silicon substrate and the resin substrate depending on inspection conditions, There is a problem that it falls.

Prior Art 1: Patent No. 10-1415635

Prior Art 2: Registration 10-0977209

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems of the conventional spatial transducers, and it is an object of the present invention to provide a space converter in which a small number of silicon substrates are stacked to form a spatial transducer, A method for manufacturing the same, and a probe card.

Further, it is intended to provide a space converter for a probe card having high durability, a method of manufacturing the same, and a probe card by stacking silicon substrates having high rigidity to form a space converter.

A spatial converter for a probe card, a method of manufacturing the same, and a probe card capable of minimizing thermal deformation according to inspection conditions and thereby improving the accuracy of inspection by forming a spatial converter from a silicon substrate that is the same material as an object to be inspected .

According to an aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: preparing a first substrate connected to a probe pin; forming a plurality of first through holes in the first substrate; Forming a first conductive layer on a part of one surface and a part of one surface of the first substrate extending from the hole, preparing a second substrate connected to a pad of the printed circuit board, Forming a second conductive layer on the second through-hole, a part of one surface of the second substrate extending from the second through-hole, and a part of the other surface of the second substrate, And connecting the first substrate and the second substrate, wherein the first substrate and the second substrate are silicon substrates.

According to an embodiment, the step of forming the plurality of first through holes in the first substrate may include the steps of forming a first photoresist layer corresponding to the pattern of the first through holes on the first substrate, And etching the first substrate using the photoresist layer as a mask.

According to an embodiment, the method may further include forming an insulating layer on the etched first substrate after forming the plurality of first through-holes in the first substrate. The insulating layer may be made of SiO ₂ .

The forming of the first conductive layer may include forming a second photoresist layer on a part of one surface of the first substrate and a part of the other surface of the first substrate, Forming the first conductive layer in a portion of the first conductive layer and removing the second photoresist layer.

According to an embodiment of the present invention, the step of connecting the first substrate and the second substrate may include direct bonding, anodic bonding, eutectic bonding, and polymer bonding. The first substrate and the second substrate may be connected to each other using one.

According to one embodiment, the first conductive layer and the second conductive layer may be made of NiCo.

According to another embodiment of the present invention, there is provided a semiconductor device comprising: a plurality of first through holes having a conductive layer formed therein; a first circuit pattern formed on one surface and extending from the plurality of first through holes; A first substrate including a first connection portion extending from the hole and a plurality of second through holes having a conductive layer formed therein; a second circuit pattern formed on one surface and extending from the plurality of second through holes; And a second substrate including a second connection portion extending from the plurality of second through holes, wherein the first substrate and the second substrate are silicon substrates. The conductive layer may be made of NiCo.

According to another embodiment, a probe pin may be connected to the first circuit pattern of the first substrate, and a pad of the printed circuit board may be connected to the second circuit pattern of the second substrate. The first substrate and the second substrate may be connected through the first connection portion and the second connection portion. The first substrate may further include a first insulation layer formed before the conductive layer, the first circuit pattern, and the first connection portion are formed. The second substrate may further include a second insulating layer formed before the conductive layer, the second circuit pattern, and the second connection portion are formed. The first insulating layer and the second insulating layer may be made of SiO ₂ .

According to another embodiment, the first substrate and the second substrate are connected by using one of direct bonding, anodic bonding, eutectic bonding and polymer bonding. Lt; / RTI > The first substrate and the second substrate may be formed using MEMS (Micro Electro Mechanical System) technology.

According to another embodiment of the present invention, there is provided a semiconductor device, comprising: a plurality of first through holes having a conductive layer formed therein; a first circuit pattern formed on one surface and extending from the plurality of first through holes; A first substrate including a first connection portion extending from the through hole and a plurality of second through holes having a conductive layer formed therein, a second circuit pattern formed on one surface of the second circuit pattern and extending from the plurality of second through holes, And a second substrate including a second connection portion extending from the plurality of second through holes, a probe pin connected to the first circuit pattern, and a printed circuit board connected to the second circuit pattern A probe card can be provided.

The above-described task solution is merely exemplary and should not be construed as limiting the present invention. In addition to the exemplary embodiments described above, there may be additional embodiments described in the drawings and the detailed description of the invention.

According to any one of the above-mentioned means for solving the problems of the present invention, a small number of silicon substrates are laminated to form a space transformer at a minimum, thereby reducing the resistance of the wiring by shortening the length of the wiring, A space converter, a method of manufacturing the same, and a probe card.

Further, by forming a space converter by laminating silicon substrates having high rigidity, it is possible to provide a space converter for a probe card having high durability, a manufacturing method thereof, and a probe card.

A spatial converter for a probe card, a method of manufacturing the same, and a probe card that can minimize thermal deformation according to inspection conditions and thereby improve the accuracy of inspection by forming a spatial converter from a silicon substrate which is the same material as an object to be inspected have.

FIG. 1 is a view illustrating an exemplary space converter for a probe card and a probe card according to an embodiment of the present invention. Referring to FIG.
2 is an exemplary view of a space converter for a probe card according to an embodiment of the present invention.
3 is a flowchart of a method of manufacturing a space converter for a probe card according to an embodiment of the present invention.
4 is an exemplary view for explaining a process of forming a first substrate according to an embodiment of the present invention.
5 is an exemplary view for explaining a process of forming a second substrate according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

Throughout the specification, when a part is referred to as being "connected" to another part, it includes not only "directly connected" but also "electrically connected" with another part in between . Also, when an element is referred to as "including" an element, it is to be understood that the element may include other elements as well as other elements, And does not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Probe  Composition of card

FIG. 1 is a view illustrating an exemplary space converter for a probe card and a probe card according to an embodiment of the present invention. Referring to FIG. Referring to FIG. 1, a probe card includes a probe pin 100, a spatial transducer 1, and a printed circuit board 130.

The probe pin 100 may be connected to the first circuit pattern 112 of the first substrate 110.

The spatial transducer 1 includes a plurality of first through holes 111 in which a conductive layer is formed, a first circuit pattern 112 formed on one surface and extending from the plurality of first through holes 111, And a first substrate 110 including a first connection part 113 extending from a plurality of first through holes.

The space converter 1 includes a plurality of second through-holes 121 having a conductive layer formed therein, a second circuit pattern 122 formed on one surface and extending from the plurality of second through-holes 121, And a second connection part 123 formed to extend from the plurality of second through holes 121. [

1, the spatial transducer 1 is shown as being formed of a first substrate 110 and a second substrate 120, but the spatial transducer 1 may be formed of two or more substrates.

The printed circuit board 130 is formed in a disc shape and can be connected to the second circuit pattern 122 of the second substrate 120 of the spatial converter 1 through the interposer 131.

Probe  Configuration of space converter for card

Hereinafter, the space converter 1 for a probe card will be described in detail. The space converter 1 for a probe card may include a first substrate 110 and a second substrate 120. Here, the first substrate 110 and the second substrate 120 are, for example, silicon substrates and can be formed using a MEMS (Micro Electro Mechanical System) technology, such as a photolithography process and an etching process .

In this manner, by forming a space converter by stacking a small number of silicon substrates at a minimum, the length of the wiring can be shortened to lower the resistance, and the productivity can be increased.

In addition, durability can be improved by stacking silicon substrates having high rigidity to form a space converter.

Also, by forming the spatial converter from a silicon substrate, which is the same material as the object to be inspected, thermal deformation according to inspection conditions can be minimized and the accuracy of inspection can be improved accordingly.

The first substrate 110 may include a plurality of first through holes 111, a first insulating layer (not shown), a first circuit pattern 112, and a first connecting portion 113.

An insulating material (first insulating layer) is formed in the plurality of first through holes 111. In addition, a conductive layer is formed on at least a part of the inside of the plurality of first through holes (111). The conductive layer may be made of, for example, NiCo, but is not limited thereto.

The first insulating layer is formed before the first circuit pattern 112 and the first connecting part 113 are formed, and may be made of, for example, SiO ₂ . Alternatively, the first insulating layer may be made of SiC, SiN _x .

The first circuit patterns 112 may extend from the plurality of first through holes 111 and may be formed on one surface of the first substrate 110, for example, a surface to which the probe pins 100 are connected.

The first connection portion 113 may be formed on the other surface. The first connection portion 113 extends from the plurality of first through holes 111. [

The second substrate 120 may include a plurality of second through holes 121, a second insulating layer (not shown), a second circuit pattern 122, and a second connecting portion 123. 1, a plurality of second through holes 121, a second connecting portion 123, and a first connecting portion 113 having a conductive layer are integrally formed. However, the second through hole 121, (123) are separately manufactured and connected to the first connection part (113).

For example, as will be described later, the first connection part 113 is formed at the time of forming the first substrate 110, and the second through hole 121 and the second connection part 123 are formed at the time of forming the second substrate 120 And are connected to each other.

An insulating material (second insulating layer) is formed inside the plurality of second through holes 121. In addition, a conductive layer may be formed on at least a part of the inside of the plurality of second through holes 121. The conductive layer may be made of, for example, NiCo.

The second insulating layer is formed before the second circuit pattern 122 and the second connecting part 123 are formed, and may be made of, for example, SiO ₂ . Alternatively, the second insulating layer may be made of SiC or SiNx.

The second circuit patterns 122 may extend from the plurality of second through holes 121 and may be formed on one surface of the second substrate 120, for example, a surface to which the printed circuit board 130 is connected.

The second connection part 123 may be formed on the other surface. The second connection portion 123 extends from the plurality of second through holes 121. [

The first substrate 110 and the second substrate 120 are connected to each other through the first connection part 113 and the second connection part 123. For example, the first substrate 110 and the second substrate 120 may be bonded by direct bonding, anodic bonding ), Eutectic bonding, and polymer bonding.

According to an embodiment of the present invention, the spatial transducer 1 for a probe card may further include an additional substrate other than the first substrate 110 and the second substrate 120. For example, the spatial transducer 1 for a probe card may further include a third substrate on the second substrate 120. At this time, the third substrate may include a plurality of third through holes, a third insulating layer, a third circuit pattern, and a third connecting portion. A conductive layer may be formed on at least a part of the inside of the third through-hole.

2 is an exemplary view of a space converter for a probe card according to an embodiment of the present invention.

A plurality of second circuit patterns are arranged on the upper surface of the space converter 1 for the probe card. In FIG. 2, only a part of the second circuit patterns 210 and 220 are shown for the sake of convenience.

A plurality of first circuit patterns are arranged on the lower surface of the space converter for the probe card. FIG. 2 exemplarily shows a plurality of first circuit patterns corresponding to the illustrated second circuit pattern.

The second circuit patterns 210 and 220 of the space converter 1 for the probe card can be connected to the pads of the printed circuit board 130 through interposers. The first circuit pattern of the space converter 1 for the probe card may be connected to the probe pin 100. The space converter 1 for the probe card can perform a pitch conversion between the probe pin 100 and the printed circuit board 130. Here, the pitch means an interval between patterns.

This pitch conversion can be made along the X-axis and / or the Y-axis depending on the circuit pattern in the process.

Probe  Method for manufacturing space converter for card

Hereinafter, a method of manufacturing a space converter for a probe card according to an embodiment of the present invention will be described with reference to FIGS. FIG. 3 is a flowchart illustrating a method of manufacturing a space converter for a probe card according to an embodiment of the present invention, FIG. 4 is an exemplary view illustrating a process of forming a first substrate according to an embodiment of the present invention And FIG. 5 is an exemplary view for explaining a process of forming a second substrate according to an embodiment of the present invention.

3 to 5, in step S310, a first substrate 300 connected to the probe pin is prepared (FIG. 4 (a)). The first substrate 400 may be a silicon substrate, for example, and may be formed using MEMS (Micro Electro Mechanical System) technology.

A plurality of first through holes 402 are formed in the first substrate 400 in step S320. At this time, in order to form the plurality of first through holes 402, a photolithography process and an etching process can be performed.

4 (b), a first photoresist layer 401 corresponding to the pattern of the first through hole 402 is formed on the first substrate 400. In this case,

Here, the photolithography process performed for the formation of the first photoresist layer 401 is a process for exposing the photoresist on a substrate on which a microcircuit is to be formed, through a mask, and then developing the photoresist. The resist layer 401 may be a state in which a photoresist material is exposed and developed.

4 (c), the first substrate 400 is etched using the first photoresist layer 401 as a mask. Here, the etching process is a process of chemically dissolving and removing the contact portion, and any one of wet etching using a solution and dry etching using a reactive gas may be used . Preferably, a dry etching method can be used.

Through the photolithography process and the etching process, a plurality of first through holes 402 are formed in the first substrate 400, as shown in FIG. 4 (c).

Thereafter, as shown in FIG. 4D, the first photoresist layer 401 formed on the first substrate 400 is removed.

An insulating layer is formed on the first substrate 400 in step S330.

4 (e), an insulating layer 403 is formed on the first substrate 400. That is, the surface of the first substrate 400 is coated with the insulating layer 403 by oxidizing the first substrate 400 having the plurality of first through holes 402 formed therein by the etching process. Here, the insulating layer 403 may be made of, for example, SiO ₂ . As described above, in the present invention, by forming the spatial transformer using the silicon substrate, it is possible to insulate each circuit pattern in the space converter by a simple process.

Alternatively, the insulating layer 403 may be made of SiC or SiNx. In this case, the insulating layer 403 may be formed using, for example, physical vapor deposition (PVD) or chemical vapor deposition (CVD).

In step S340, the first conductive layer 405 is formed on the first through-hole 402, a part of one surface of the first substrate extending from the first through-hole 402, and a part of the other surface. At this time, in order to form the first conductive layer 405, a photoresist process and a conductive layer forming process (e.g., a plating process) may be performed.

4 (f), a second photoresist layer 404 is formed on a part of one surface of the first substrate 400 and a part of the other surface. Here, the second photoresist layer 404 may be a state in which a photoresist material is exposed and developed.

4 (g), a first conductive layer 405 is formed at a portion other than the portion where the second photoresist layer 404 is formed, and thereafter, as shown in Fig. 4 (h) The second photoresist layer 404 is removed. Here, the first conductive layer 405 may be made of NiCo.

The first conductive layer 405 formed on one surface of the first substrate 400 functions as the first circuit pattern 112 in FIG. 1 and is formed on the first through hole 402 and the other surface of the first substrate 400 The formed first conductive layer 405 may function as the first connection portion 113 in FIG.

In step S350, a second substrate 500 connected to the pad of the printed circuit board is prepared. Referring to FIG. 5A, the second substrate 500 may be formed as a silicon substrate using MEMS (Micro Electro Mechanical System) technology, for example, a photolithography process, an etching process, or the like.

A plurality of second through holes 502 are formed in the second substrate 500 in step S360. At this time, in order to form the plurality of second through holes 502, a photolithography process and an etching process can be performed.

5 (b), a third photoresist layer 501 corresponding to the pattern of the second through hole 502 is formed on the second substrate 500. Here, the photoresist process performed to form the third photoresist layer 501 is a process of exposing the photoresist layer on a substrate on which a microcircuit is to be formed, through a mask, and then developing the photoresist layer, The resist layer 501 may be a state in which a photoresist material is exposed and developed.

5 (c), the second substrate 500 is etched using the third photoresist layer 501 as a mask.

Here, the etching process is a process of chemically dissolving and removing the contact portion, and any one of wet etching using a solution and dry etching using a reactive gas may be used . Preferably, a dry etching method can be used.

A plurality of second through holes 502 are formed in the second substrate 500, as shown in FIG. 5 (c), after the photolithography process and the etching process.

Thereafter, as shown in FIG. 5D, the third photoresist layer 501 formed on the second substrate 500 is removed.

An insulating layer is formed on the second substrate 500 in step S370. Specifically, as shown in FIG. 5E, an insulating layer 503 is formed on the second substrate 500. That is, the surface of the second substrate 500 is coated with the insulating layer 503 by oxidizing the second substrate 500 having a plurality of second through holes 502 formed in the etching process. Here, the insulating layer 503 may be made of, for example, SiO ₂ . As described above, in the present invention, by forming the spatial transformer using the silicon substrate, it is possible to insulate each circuit pattern in the space converter by a simple process.

Alternatively, the insulating layer 503 may be made of SiNx. In this case, the insulating layer 503 may be formed using, for example, physical vapor deposition (PVD) or chemical vapor deposition (CVD).

In step S380, the second conductive layer 505 is formed on the second through-hole 502, a part of one surface of the second substrate extending from the second through-hole 502, and a part of the other surface. At this time, in order to form the second conductive layer 505, a photoresist process and a conductive layer forming process (e.g., a plating process) may be performed.

Specifically, as shown in FIG. 5F, a fourth photoresist layer 504 is formed on a part of one surface of the second substrate 500 and a part of the other surface. Here, the fourth photoresist layer 504 may be in a state in which a photoresist material is exposed and developed.

5 (g), a second conductive layer 505 is formed at a portion other than the portion where the fourth photoresist layer 504 is formed. Thereafter, as shown in FIG. 5 (h) As noted, the fourth photoresist layer 504 is removed. Here, the second conductive layer 505 may be made of NiCo.

The second conductive layer 505 formed on one surface of the second substrate 500 functions as the second circuit pattern 122 in FIG. 1 and is electrically connected to the second through hole 502 and the other surface of the second substrate 500 The formed second conductive layer 505 may function as the second connection portion 123 in FIG.

The first substrate 400 on which the first conductive layer 405 is formed and the second substrate 500 on which the second conductive layer 505 is formed are connected in step S390. Here, the first substrate 400 and the second substrate 500 may be connected by using direct bonding, anodic bonding, eutectic bonding, and polymer bonding. have.

In addition, although not shown, a plurality of substrates may be further formed on the second substrate 500. For example, a third substrate may be further formed on the second substrate 500. At this time, a third conductive layer for improving electrical characteristics may be formed on the second conductive layer 505 of the second substrate 500.

It will be understood by those skilled in the art that the foregoing description of the present invention is for illustrative purposes only and that those of ordinary skill in the art can readily understand that various changes and modifications may be made without departing from the spirit or essential characteristics of the present invention. will be. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100: probe pin
110: first substrate
111: first through hole
112: first circuit pattern
113: first connection portion
120: second substrate
121: second through hole
122: second circuit pattern
123: second connection portion
130: printed circuit board
131: interposer

Claims (17)

A method for manufacturing a space converter for a probe card,
Preparing a first substrate connected to the probe pin;
Forming a plurality of first through holes in the first substrate;
Forming a first conductive layer on the first through hole, a part of one surface of the first substrate extending from the first through hole, and a part of the other surface;
Preparing a second substrate connected to a pad of a printed circuit board;
Forming a plurality of second through holes in the second substrate;
Forming a second conductive layer on the second through-hole, a part of one surface of the second substrate extending from the second through-hole, and a part of the other surface; And
Connecting the first substrate and the second substrate
Lt; / RTI >
Wherein the first substrate and the second substrate are silicon substrates,
Wherein forming the plurality of first through holes in the first substrate comprises:
Forming a first photoresist layer on the first substrate corresponding to the pattern of the first through holes; And
And etching the first substrate using the first photoresist layer as a mask,
Wherein forming the first conductive layer comprises:
Forming a second photoresist layer on a portion of one side of the first substrate and a portion of the other side of the first substrate;
Forming the first conductive layer on a portion other than a portion where the second photoresist layer is formed; And
Removing the second photoresist layer
Wherein the probe card has a plurality of protrusions.
delete The method according to claim 1,
After the step of forming the plurality of first through holes in the first substrate,
Forming an insulating layer on the etched first substrate
Wherein the probe card further comprises:
The method of claim 3,
Wherein the insulating layer is made of SiO ₂ .
delete The method according to claim 1,
Wherein the step of connecting the first substrate and the second substrate comprises:
Wherein the first substrate and the second substrate are connected using one of direct bonding, anodic bonding, eutectic bonding and polymer bonding, / RTI >
The method according to claim 1,
Wherein the first conductive layer and the second conductive layer are made of NiCo.
A space converter for a probe card,
A first circuit pattern formed on one surface of the substrate, the first circuit pattern extending from the plurality of first through holes, and a first connection portion formed on the other surface and extending from the plurality of first through holes, A first substrate; And
A second circuit pattern formed on one surface and extending from the plurality of second through holes and a second connection portion formed on the other surface and extending from the plurality of second through holes, The second substrate
/ RTI >
Wherein the first substrate and the second substrate are silicon substrates,
A first photoresist layer corresponding to the pattern of the first through holes is formed on the first substrate,
The first substrate is etched using the first photoresist layer as a mask,
A second photoresist layer is formed on a part of one surface of the first substrate and a part of the other surface of the first substrate,
The conductive layer is formed on a portion other than the portion where the second photoresist layer is formed,
Wherein the second photoresist layer is removed.
9. The method of claim 8,
A probe pin is connected to the first circuit pattern of the first substrate,
Wherein a pad of a printed circuit board is connected to a second circuit pattern of the second substrate.
9. The method of claim 8,
Wherein the first substrate and the second substrate are connected through the first connection portion and the second connection portion.
9. The method of claim 8,
Wherein the first substrate further comprises a first insulation layer formed before the conductive layer, the first circuit pattern, and the first connection are formed.
12. The method of claim 11,
Wherein the second substrate further comprises a second insulating layer formed before the conductive layer, the second circuit pattern, and the second connecting portion are formed.
13. The method of claim 12,
Wherein the first insulating layer and the second insulating layer are made of SiO ₂ .
9. The method of claim 8,
Wherein the conductive layer is made of NiCo.
9. The method of claim 8,
Wherein the first substrate and the second substrate are connected using one of direct bonding, anodic bonding, eutectic bonding and polymer bonding. Space converter.
9. The method of claim 8,
Wherein the first substrate and the second substrate are formed using MEMS (Micro Electro Mechanical System) technology.
In the probe card,
A first circuit pattern formed on one surface of the substrate, the first circuit pattern extending from the plurality of first through holes, and a first connection portion formed on the other surface and extending from the plurality of first through holes, And a second circuit pattern formed on one surface of the first circuit board and extending from the plurality of second through holes, the second circuit pattern being formed on the other surface and extending from the plurality of second through holes A spatial transducer comprising a second substrate including an elongated second connection;
A probe pin connected to the first circuit pattern; And
A printed circuit board connected to the second circuit pattern,
≪ / RTI >
A first photoresist layer corresponding to the pattern of the first through holes is formed on the first substrate,
The first substrate is etched using the first photoresist layer as a mask,
A second photoresist layer is formed on a part of one surface of the first substrate and a part of the other surface of the first substrate,
The conductive layer is formed on a portion other than the portion where the second photoresist layer is formed,
Wherein the second photoresist layer is removed.

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