KR101919514B1 - 이면접합형 후방 접촉 솔라셀 및 기판을 프로세싱하기 위한 그 방법 - Google Patents

이면접합형 후방 접촉 솔라셀 및 기판을 프로세싱하기 위한 그 방법 Download PDF

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KR101919514B1
KR101919514B1 KR1020147012389A KR20147012389A KR101919514B1 KR 101919514 B1 KR101919514 B1 KR 101919514B1 KR 1020147012389 A KR1020147012389 A KR 1020147012389A KR 20147012389 A KR20147012389 A KR 20147012389A KR 101919514 B1 KR101919514 B1 KR 101919514B1
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mask
substrate
type dopant
implantation
type
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KR20140070661A (ko
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존 더블유. 그래프
벤자민 비. 리오돈
니콜라스 피. 티. 베이트맨
죠셉 씨. 올슨
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
KR1020147012389A 2011-10-11 2012-10-08 이면접합형 후방 접촉 솔라셀 및 기판을 프로세싱하기 위한 그 방법 Expired - Fee Related KR101919514B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/270,290 US9190548B2 (en) 2011-10-11 2011-10-11 Method of creating two dimensional doping patterns in solar cells
US13/270,290 2011-10-11
PCT/US2012/059238 WO2013055627A1 (en) 2011-10-11 2012-10-08 Method of creating two dimensional doping patterns in solar cells

Publications (2)

Publication Number Publication Date
KR20140070661A KR20140070661A (ko) 2014-06-10
KR101919514B1 true KR101919514B1 (ko) 2019-02-08

Family

ID=47080834

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KR1020147012389A Expired - Fee Related KR101919514B1 (ko) 2011-10-11 2012-10-08 이면접합형 후방 접촉 솔라셀 및 기판을 프로세싱하기 위한 그 방법

Country Status (6)

Country Link
US (1) US9190548B2 (enExample)
JP (1) JP6031112B2 (enExample)
KR (1) KR101919514B1 (enExample)
CN (1) CN103975450B (enExample)
TW (1) TWI560894B (enExample)
WO (1) WO2013055627A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2988908B1 (fr) * 2012-04-03 2015-03-27 Commissariat Energie Atomique Procede de fabrication d'une cellule photovoltaique a contacts interdigites en face arriere
TWI643351B (zh) * 2013-01-31 2018-12-01 澳洲商新南創新有限公司 太陽能電池金屬化及互連方法
CN104425651B (zh) * 2013-09-09 2016-08-10 上海理想万里晖薄膜设备有限公司 一种低温制备正面无栅极的异质结太阳电池的工艺
TWM477049U (en) * 2013-09-25 2014-04-21 Inventec Solar Energy Corp Back contact electrode solar cell
US9401450B2 (en) * 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US20150280043A1 (en) * 2014-03-27 2015-10-01 David D. Smith Solar cell with trench-free emitter regions
CN104253169B (zh) * 2014-09-28 2016-09-07 泰州中来光电科技有限公司 无主栅、高效率背接触太阳能电池模块、组件及制备工艺
TWI596786B (zh) * 2015-12-03 2017-08-21 茂迪股份有限公司 背接觸太陽能電池及其製造方法
CN110010719B (zh) * 2018-01-05 2021-02-19 上海凯世通半导体股份有限公司 掺杂方法

Citations (3)

* Cited by examiner, † Cited by third party
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JP2003297718A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 微細孔形成方法、半導体装置の製造方法、半導体装置、表示装置、および電子機器
JP2008522420A (ja) * 2004-12-03 2008-06-26 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 種々異なってドープされた領域を製作するための多重マスク及び方法
WO2011049950A1 (en) * 2009-10-19 2011-04-28 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation

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US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US8008575B2 (en) 2006-07-24 2011-08-30 Sunpower Corporation Solar cell with reduced base diffusion area
JP2009152222A (ja) * 2006-10-27 2009-07-09 Kyocera Corp 太陽電池素子の製造方法
CN101675531B (zh) * 2007-02-16 2013-03-06 纳克公司 太阳能电池结构、光生伏打模块及对应的工艺
US7820460B2 (en) 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
US20090227095A1 (en) 2008-03-05 2009-09-10 Nicholas Bateman Counterdoping for solar cells
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
US7816239B2 (en) * 2008-11-20 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell
US8008176B2 (en) 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8912082B2 (en) 2010-03-25 2014-12-16 Varian Semiconductor Equipment Associates, Inc. Implant alignment through a mask
KR101702982B1 (ko) * 2010-07-19 2017-02-06 삼성에스디아이 주식회사 태양 전지 및 그 제조 방법
US8242005B1 (en) 2011-01-24 2012-08-14 Varian Semiconductor Equipment Associates, Inc. Using multiple masks to form independent features on a workpiece
US8153496B1 (en) * 2011-03-07 2012-04-10 Varian Semiconductor Equipment Associates, Inc. Self-aligned process and method for fabrication of high efficiency solar cells
US8697559B2 (en) 2011-07-07 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Use of ion beam tails to manufacture a workpiece

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003297718A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 微細孔形成方法、半導体装置の製造方法、半導体装置、表示装置、および電子機器
JP2008522420A (ja) * 2004-12-03 2008-06-26 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 種々異なってドープされた領域を製作するための多重マスク及び方法
WO2011049950A1 (en) * 2009-10-19 2011-04-28 Varian Semiconductor Equipment Associates, Inc. Stepped masking for patterned implantation

Also Published As

Publication number Publication date
CN103975450B (zh) 2016-06-22
CN103975450A (zh) 2014-08-06
WO2013055627A1 (en) 2013-04-18
US9190548B2 (en) 2015-11-17
WO2013055627A9 (en) 2014-07-03
TW201318190A (zh) 2013-05-01
KR20140070661A (ko) 2014-06-10
TWI560894B (en) 2016-12-01
JP6031112B2 (ja) 2016-11-24
JP2014532314A (ja) 2014-12-04
US20130087189A1 (en) 2013-04-11

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