CN103975450A - 在太阳能电池中产生二维图式掺杂的方法 - Google Patents
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Abstract
本发明揭示一种指叉式背接触太阳能电池及其制造指叉式背接触太阳能电池的改良方法。第一光罩是用n型掺杂物的图案化离子植入以完成背面场。第二光罩是用以在同一平面上产生p型发射体。第二光罩用以与n型植入对齐,并于多个取向以产生所需的p型发射体。在一些实施例中,进行p型参杂物全面性离子布植。在一些实施例中,产生掺杂梯度。
Description
背景技术
离子布植是一种把导电性改变杂质引入基板内的标准技术。一杂质材料在一离子源中被离子化,并加速离子以形成一预设能量的离子束,而此离子束被指引到基板表面上。离子束中充满能量的离子穿透基板的主体材料中,并嵌入到基板材料的结晶晶格中以形成所需的一导电区。
太阳能电池提供一种无污染、平等能源存取的免费天然资源。基于环境及能源成本增加的考量,具有硅基板的太阳能电池对于全球来说也越来越愈来愈重要。降低制造成本、生产高性能太阳能电池或改良高性能太阳能电池的效率对于全球太阳能电池实施都是正向冲击。这将会使这无污染的能源有更广泛的利用性。
太阳能电池需要通过掺杂过程来改良其效率。掺杂物可以是例如:砷、磷或硼。图1是指叉状背接触(interdigitated back contact,IBC)太阳能电池的横截面图。在IBC太阳能电池中,p-n接面是在IBC太阳能电池的背面。在一些实施例中,如图2所示,掺杂图案包括布植在整个p型掺杂区域203中的多个n型掺杂区域204。p+发射体203和n+背面场204都适当地掺杂。此掺杂过程使IBC太阳能电池中的接面功能启动或效能增加。
一般而言,掺杂图案如图2所示,直接地在基板上形成的硬光罩。举例而言,一种光罩材质应用到整个基板上。硬光罩材质被图案化,如此一来,光罩材质仅移除n型掺杂区域。并使用包括扩散、离子植入或其他适当的掺杂方法以掺杂于暴露的区域。待掺杂过程完毕后,硬光罩可能会被移除。在适当情况下,可重复此过程以在基板上形成额外图案掺杂区域。
值得注意的是,硬光罩技术需要大量的流程步骤,如光罩材料的形成、光罩材料的图案化过程和掺杂流程后光罩的移除。所以硬光罩方法是耗时且昂贵的。
假若不需将材料直接应用于基板上以形成图案掺杂区域的话,则会是有帮助的。例如,图案仅通过荫影的光罩就产生出来的话,则会是有益的。
发明内容
本发明揭示一种指叉式背接触太阳能电池及其制造指叉式背接触太阳能电池的改良方法。第一光罩是用n型掺杂物的图案化离子植入以完成背面场。第二光罩是用以在同一平面上产生p型发射体。第二光罩用以与n型植入对齐,并于多个取向以产生所需的p型发射体。在一些实施例中,进行p型参杂物全面性离子布植。在一些实施例中,产生掺杂梯度。
附图说明
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。
图1是指叉状背接触太阳能电池的横截面图。
图2是指叉状背接触太阳能电池的底视图。
图3是依照本发明一实施例藉由光罩布植的横截面图。
图4是依照本发明一实施例以说明图2中产生n型背面场的光罩示意图。
图5A是依照本发明一实施例以说明图2中用来产生一部分p型发射体的光罩示意图。
图5B是依照本发明一实施例以说明使用图5A中的光罩以植入到基板的植入区域的示意图。
图6是依照本发明一实施例以说明使用图5A的光罩于基板中进行两次布植的植入区域示意图。
图7显示基板植入区域中的n型和p型区域示意图。
图8是依照本发明一实施例太阳能电池制造过程的流程图。
图9是依照本发明一实施例掺杂梯度示意图。
具体实施方式
此处描述本系统的实施例仅关于太阳能电池。然而,本系统的实施例亦可用在,例如:半导体晶圆或平板上。植入器可以是,例如:离子束或电浆掺杂离子植入器。因此,本发明并未限制在本发明所揭示的具体实施例中。
图3是依照本发明一实施例藉由光罩布植的横截面图。当欲在基板100上形成一离子植入具体图案时,则需要使用光罩104。此光罩104可以是一荫影的或趋近光罩。光罩104放置在基板100的前面一小段距离及离子束101路径上。基板100可以是例如:一太阳能电池。基板100放置在压板102上,压板102用静电或物理力以固定基板100。光罩104上有数个开口105,对应到在基板100上离子植入时所需的各种图案。开口105可以是条纹状、点状,或者是其他形状。离子束101的掺杂原子通过数个开口105到光罩104上。因此,在基板上仅形成数个植入过的区域103。区域103可对应到例如:IBC太阳能电池的n型背面场,如图2所示。
图4是依照本发明一实施例以说明图2中产生n型背面场(BackSurface Field,BSF)的光罩示意图。使用光罩104相较于硬光罩可以消除处理步骤。可以消除的处理步骤包括光罩材料的形成、光罩材料的图案化和掺杂过程后光罩的移除。如本发明实施例中所揭示,后续的植入过程可用于植入在太阳能电池中的其他区域。
根据太阳能电池采用的具体图案掺杂过程,以单一荫影的光罩来产生如图2所示的p型发射区203是相当困难或不可能的。因此,在传统的制造流程中,如上所述的其他技术,例如:硬光罩,以产生p型发射区203。此利用硬光罩或其他光罩技术此搭配离子植入、扩散、或其他的掺杂方法。
优点是可以重复使用一或多个荫影的光罩来产生p型发射区203。图5A显示可用以产生这些发射区域的一荫影的光罩300,而图5B显示基板上产生的布植区域。使用荫影的光罩300一次可于基板上得到条纹植入图示310。基板与荫影的光罩300彼此旋转相对成90°。此亦可通过旋转荫影的光罩300、旋转基板或两者皆旋转的组合来完成。在一些实施例中,两者的植入都使用相同的光罩300。在其他实施例中,使用不同于光罩300的第二片光罩。通过多个光罩而不破坏真空环境的方式来链接或执行植入。
图6是依照本发明一实施例以说明使用图5A的光罩于基板中进行两次布植的植入区域示意图。值得注意的是,其中定义4种不同类型区域311、312、313和314的棋盘格图案。区域311在两次植入时都被荫影的光罩300遮挡,因此并未被掺杂。区域312在两次植入时皆被离子束所曝光。区域313只有在第一次植入时曝光,区域314是第二次植入时才曝光。
在一些实施例中,操作参数,例如种类、剂量、能量与持续时间,对于第一植入和第二次植入来说都是相同的。在本实施例中,区域313和314获得相同的剂量和相似的掺杂。在此情况下,区域312相较于区域313和314具有两倍掺杂浓度。在此情况下,区域311没有剂量。在第一植入及第二次植入时,光罩300可能被对齐,以致于n型背面场204完全落入区域311,得到如图7所示的植入图案。
值得注意的是,此植入图案与图2所示很类似。因此,为了产生此植入图案可使用如图8所示的一套步骤流程,且亦可使用其他的步骤顺序。
首先,在步骤400中,具有复数圆形开口的一光罩,其圆形开口的直径为100微米(um)到1000um的范围之间,对应到当n型掺杂在植入时用来当荫影的光罩的n型背面场204,例如是磷或其他第五族元素或分子。在一些实施例中,此植入是在以下操作参数时执行:具有10keV离子能量的磷离子,于掺杂剂活化后,离子剂量为2e15cm-2时可得到离子浓度范围1e19到5e19cm-3之间的一n型掺杂浓度。
其次,如步骤410所示,具有复数开口且形成条纹图案的第二光罩用来进行p型掺杂物的第一次植入,例如硼或其他第三族元素或分子。该第二光罩中每个开口之间的距离大于第一光罩的开口,使n型植入区域与第二光罩的开口可以契合。上述距离可在500um到2000um的范围之间。第二光罩与基求板对准,使得第二光罩覆盖在n型植入区域。只要第二光罩对准,则会进行p型掺杂物的第一次植入,如步骤420所示。P型掺杂物的第一次植入可能适用以下情形:具有10kV离子能量的硼离子,于掺杂剂活化后,离子剂量为1e15cm-2时可得到离子浓度范围2e18到10e18cm-3之间的掺杂浓度。
接下来,基板与光罩彼此旋转互相成90°,如步骤430所示,并对准使多个n型植入区域仍然在光罩覆盖下。如前所述,此步骤亦可用其他不同的光罩。在步骤440中,执行p型掺杂物的第二次植入,其操作参数与参杂结果与p型掺杂物的第一次植入相同。
此外,要注意n型植入(步骤400)可在p型植入(步骤420、440)以后或中途进行。此步骤顺序和荫影的光罩的使用可避免于生产IBC太阳能电池时的昂贵与耗时。这些步骤可操作在一或多台离子植入机上。如果仅使用一台离子植入机时,这些步骤会依序执行在不破坏太阳能电池的真空环境下。
于图8所示的步骤流程,对p型掺杂物进行全面性离子布植,以于区域311产生最低限度的p型掺杂物。此全面性离子布植可进行在图8所示流程中任何时点。p型掺杂物的全面性离子布植可能使用以下情形:具有10kV离子能量的硼离子,于掺杂剂活化后,离子剂量范围为2e14到1e15cm-2之间时,则可得到离子浓度范围为1e18到5e18cm-3之间的掺杂浓度。需要选出特定条件,如此一来n型背面场204的掺杂物浓度超过p型全面性离子布植的掺杂物浓度。
此额外的全面性离子布植是有利的。例如,此全面性离子布植可保证基板的整个表面都被布植(不管p型或n型),其作用在于降低少数载体的再结合。此提升了太阳能电池的效率。
此外,本发明此处描述的方法比全面性的离子布植且均匀的p型发射体区域与n型背面场反掺杂的方法优异。就定义来看,此方法在发射体中产生了空间变量的掺杂分布。这有几个有利的原因。第一,对发射体允许低阻抗欧母接触的区域312中有高掺杂浓度。第二,在区域312及313中存在较低掺杂浓度,以减少再结合的方式,加强了太阳能电池的效益。最后,在区域311中可以实现低的掺杂浓度,可有效的降低发射体及背面场之间的分流。在区域311的低掺杂浓度也允许背面场区域204在反掺杂时减少所需的植入剂量。
如上述多张附图所显示,当植入基板其中的部分区域,所有在此区域的位置都得到相同的剂量。这可以通过具有对瞄准度有严谨的容忍度的离子束,或藉由靠近基板的荫影的光罩来完成。
然而,在其他实施例中,具有掺杂梯度的背面场区域204以及发射体区域311、312、313、314是有利的。任何离子束具有固有的发散角度,例如因空间电荷效应或离子束的炸毁所造成。此角度发散或非瞄准代表植入及非植入区域之间的转变,不会像图中所示的那么突发。
图9显示开口位置与基板之间的剂量浓度示意图。上述附图是具有离子束穿过开口401的一光罩400。在开口正下方的区域402可以离子的全剂量来植入。然而,与开口401邻近的区域403也因为离子束的非瞄准度而被暴露于一定量的离子。区域403的形状和大小可能取决于离子束的瞄准度和光罩400与基板之间的距离。因此,如图7所示,全植入区域的一掺杂梯度可通过变换光罩400与基板之间的距离以及调整离子束的瞄准度来产生。此外,可通过变换离子束相对于基板的入射角度,以调整出开口仅一侧的邻近区域403形状。此梯度可减少p-n接面的突发性。
本发明揭示假设n型掺杂物区域是圆形的,而p型掺杂物区域形成一棋盘格图案,但并不以此为限制。例如:圆形布植区域可以是p型掺杂物,棋盘格图示也可以是n型掺杂物。
目前公开揭示的范围,没有因具体的实施例而被限制。的确,目前公开揭示的各种实施例和修改,除了本文所描述的那些,从前面的描述和附图对本领域的通常知识者来说是显而易见的。因此,这样的其他实施例和修改都将落入本公开的范围内。此外,虽然本公开已经描述了本发明的上下文在特定环境中的特定实现针对特定用途的,那些在本技术领域的普通技术人员将认识到其有用性不限于此,并且本公开的可能实益在任何数目的环境中实现任何数量的目的。因此,以下列出的权利要求项应被在完整广度观念及目前揭示的精神上做完整的解释。
Claims (20)
1.一种处理基板的方法,用以产生一指叉状背接触太阳能电池,包括:
经由具有多个第一开口的第一光罩植入n型掺杂物质,以在该基板上产生对应的多个n型掺杂区域;
经由第二光罩执行第一次p型掺杂物布植,用以在该基板产生多个第一p型掺杂条纹区域,其中该第二光罩具有多个条纹开口,其中该些条纹开口其中一对之间的距离大于该些第一开口的尺寸,其中对齐该第二光罩以使该些n型掺杂区域不被该第一次p型掺杂物布植所植入;以及
经由第三光罩执行第二次p型掺杂物布植,用以在该基板产生多个第二p型掺杂条纹区域,其中对齐该第三光罩以使该些n型掺杂区域不被该第二次p型掺杂物布植所植入。
2.根据权利要求1所述的处理基板方法,其中该第二光罩和该第三光罩中包括单一光罩,而该第二次p型掺杂物布植藉由旋转该第二光罩和该基板,且该第二光罩相对于该基板彼此成90°。
3.根据权利要求1所述的处理基板方法,还包括对该基板执行p型掺杂物全面性布植。
4.根据权利要求1所述的处理基板方法,其中植入该n型掺杂物质是在第一次p型掺杂物布植和第二次p型掺杂物布植之后执行。
5.根据权利要求1所述的方法,其中该些n型掺杂区域包括掺杂梯度。
6.根据权利要求5所述的方法,其中该掺杂梯度是藉由调整该基板及该第一光罩的距离产生的。
7.根据权利要求5所述的方法,其中该些掺杂物质是以离子束植入,而该掺杂梯度是藉由调整该离子束的瞄准度所产生的。
8.根据权利要求1所述的方法,其中该些p型掺杂区包括掺杂梯度。
9.根据权利要求8所述的方法,其中该掺杂梯度是藉由调整该第二光罩和该基板的距离产生的。
10.根据权利要求8所述的方法,其中该些掺杂物是以离子束植入,而该掺杂梯度是藉由调整该离子束的瞄准度所产生的。
11.一种处理基板的方法,以产生指叉状背接触太阳能电池,包括:
经由一或多个光罩以植入p型掺杂物,需要至少两个步骤来形成棋盘格图案,其中该棋盘格图案的第一部分的植入程度少于其他部分;以及
经由其他光罩以植入n型掺杂物于该棋盘格图案的该第一部分。
12.根据权利要求11所述的方法,还包括:
对该基板执行p型掺杂物全面性布植。
13.根据权利要求11所述的方法,其中植入n型掺杂物是在p型掺杂物布植之后执行。
14.根据权利要求11所述的方法,其中该些n型掺杂区包括掺杂梯度。
15.根据权利要求11所述的方法,其中该些p型掺杂区包括掺杂梯度。
16.根据权利要求11所述的方法,其中该棋盘格图案是藉由具有多个条纹开口的光罩所产生。
17.根据权利要求11所述的方法,其中该n型掺杂物是藉由具有多个圆形小孔的光罩所产生。
18.一种指叉状背接触太阳能电池,包括:
p型掺杂棋盘格图案,其中该p型掺杂棋盘格图案的第一部分的植入程度少于其他部分;以及
多个n型掺杂区域,该些n型掺杂区域位于基板的第一部分。
19.根据权利要求17所述的指叉状背接触太阳能电池,还包括该p型掺杂棋盘格图案的第二部分,其中该第二部分植入程度多于其他部分。
20.根据权利要求18所述的指叉状背接触太阳能电池,其中该p型掺杂棋盘格图案的该第一部分及该第二部分分别占p型掺杂棋盘格图案的四分之一。
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