KR101904206B1 - Nano plasmonic sensor and method of manufacturing the same - Google Patents

Nano plasmonic sensor and method of manufacturing the same Download PDF

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KR101904206B1
KR101904206B1 KR1020170033961A KR20170033961A KR101904206B1 KR 101904206 B1 KR101904206 B1 KR 101904206B1 KR 1020170033961 A KR1020170033961 A KR 1020170033961A KR 20170033961 A KR20170033961 A KR 20170033961A KR 101904206 B1 KR101904206 B1 KR 101904206B1
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substrate
dielectric
metal
metal structure
horizontal portion
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KR1020170033961A
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KR20180107381A (en
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위정섭
옥종걸
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한국표준과학연구원
서울과학기술대학교 산학협력단
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Priority to KR1020170033961A priority Critical patent/KR101904206B1/en
Priority to PCT/KR2017/003590 priority patent/WO2018169119A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection

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  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The nanoplasmonic sensor of the present invention includes a substrate, at least one dielectric structure disposed to extend in one direction on the substrate, a metal structure covering the upper surface and one side of the dielectric structure and disposed to extend to the upper surface of the substrate, And a measurement unit for measuring a local surface plasmon resonance phenomenon in the sample. A method of manufacturing a nanoplasmonic sensor according to the present invention includes the steps of forming a dielectric layer on a substrate, patterning the dielectric layer using a mold including a nano pattern to form a dielectric structure, Depositing a metal material on the upper surface and one side of the dielectric structure and a part of the exposed upper surface of the substrate by supplying the metal material to form the metal structure.

Description

TECHNICAL FIELD [0001] The present invention relates to a nanoplasmonic sensor and a method of manufacturing the same.

The present invention relates to a nanoplasmonic sensor and a method of manufacturing the same, and more particularly, to a nanoplasmonic sensor using a local surface plasmon resonance phenomenon in a metal structure and a method of manufacturing the same.

Plasmon resonance is a phenomenon caused by the behavior of free electrons in a metal. When light enters between a metal surface and a dielectric, the free electrons on the metal surface collectively oscillate due to resonance with the electromagnetic field of the specific energy of light. .

Surface Plasmon Resonance (SPR) is a phenomenon in which resonance occurs due to the quantized vibration of free electrons propagating along the surface of a metal thin film. On the other hand, a metal structure having a size of several nanometers to several hundreds of nanometers, which is made of a metal rather than a metal thin film, causes collective oscillation of electrons in the conduction band due to light having a specific wavelength incident from the outside, and thus has an electric dipole or multipole characteristic. As a result, unlike in the bulk state, it strongly scatter and absorb light in the corresponding wavelength region, and the electromagnetic field in the local region increases, which is called Local Surface Plasmon Resonance (LSPR). Particularly, by using optical phenomenon by plasmon resonance in a nano-sized metal structure made of noble metal such as gold (Au) and silver (Ag), devices such as real time chemical / biological sensors are extensively studied have.

One aspect of the present invention is to provide a nanoplasmonic sensor using a local surface plasmon resonance phenomenon in a metal structure and a method of manufacturing the same.

A nanoplasmonic sensor according to exemplary embodiments includes a substrate, at least one dielectric structure disposed to extend in one direction on the substrate, a dielectric layer disposed over the top surface and one side of the dielectric structure, And a measurement unit for measuring a local surface plasmon resonance phenomenon in the metal structure.

For example, the metal structure may include a first horizontal portion disposed on the upper surface of the dielectric structure, a vertical portion bent from the first horizontal portion and disposed along one side surface of the dielectric structure, And a second horizontal portion disposed along the upper surface of the substrate.

For example, the second horizontal portion may be bent in a direction opposite to the first horizontal portion from the vertical portion.

For example, the length of the first horizontal portion may be longer than the length of the second horizontal portion.

In one example, the overall width of the metal structure may range from 10 nm to 1000 nm.

In one example, the thickness of the metal structure may range from 1 nm to 200 nm.

For example, the dielectric structure may have a rectangular parallelepiped shape.

For example, the plurality of dielectric structures may be spaced apart from each other by a predetermined distance.

For example, the measurement unit may include a light source unit disposed on the substrate and generating incident light incident on the metal structure, and a light source unit disposed on a lower surface of the substrate, And a light receiving portion for detecting the changed light.

In one example, the substrate may be a flexible substrate.

The nanoplasmonic sensor according to exemplary embodiments includes a metal structure including at least two bends bent in different directions, and a measurement unit for measuring a local surface plasmon resonance phenomenon in the metal structure.

For example, the dielectric structure may further include a dielectric structure having a hexahedral shape, the metal structure may be disposed on one side of the dielectric structure, and the bends may be bent in opposite directions at the top and bottom of the dielectric structure.

A method of fabricating a nanoplasmonic sensor according to exemplary embodiments includes the steps of forming a dielectric layer on a substrate, patterning the dielectric layer using a mold comprising nanopatterns to form a dielectric structure, Forming a metal structure by depositing a metal material on an upper surface and a side surface of the dielectric structure and a part of an exposed upper surface of the substrate by supplying a metal material at an angle with respect to the dielectric structure.

In one example, the metal material may be supplied at an angle of 10 DEG to 80 DEG with respect to a direction perpendicular to the substrate.

As an example, at least some of the steps may be performed by a roll to roll nanoimpint process.

A nanoplasmonic sensor with high sensitivity can be provided by extending the oscillation path of local surface plasmon using a metal structure having two bent portions.

Also, a method of manufacturing a nanoplasmonic sensor capable of manufacturing a nanoplasmonic sensor with high sensitivity by controlling the shape of a metal structure can be provided.

The various and advantageous advantages and effects of the present invention are not limited to the above description, and can be more easily understood in the course of describing a specific embodiment of the present invention.

1 is a schematic cross-sectional view of a nanoplasmonic sensor according to an exemplary embodiment.
2 is a schematic perspective view showing a sensing unit according to an exemplary embodiment;
3A and 3B are schematic perspective views of a sensing unit according to an exemplary embodiment.
FIGS. 4A through 4C are schematic views showing major steps of a method of manufacturing a nanoplasmonic sensor according to an exemplary embodiment.
5 is a schematic cross-sectional view of an apparatus for manufacturing a nanoplasmonic sensor according to an exemplary embodiment.
FIGS. 6A to 6C are cross-sectional views for explaining a step in a method of manufacturing a nanoplasmonic sensor according to an exemplary embodiment.
7A to 7C are graphs showing measurement results using an exemplary nanoplasmonic sensor.
8A and 8B are graphs showing measurement results using an exemplary nanoplasmonic sensor.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

The embodiments of the present invention may be modified into various other forms or various embodiments may be combined, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 is a schematic cross-sectional view of a nanoplasmonic sensor according to an exemplary embodiment.

Referring to FIG. 1, a nanoplasmonic sensor 10 includes a sensing unit 100 and a measurement unit 200. The sensing unit 100 may sense a change in the plasmon resonance characteristic of the analyte 300 and the measuring unit 200 may detect a change in the optical characteristic. The nanoplasmonic sensor 10 can be used for detection, measurement and analysis of biomolecules, such as biological enzymes, cells and proteins, and chemicals, by using the plasmon resonance phenomenon.

The sensing unit 100 may include a substrate 101, a dielectric structure 110, and a metal structure 120.

The substrate 101 can be selected from a conventional semiconductor substrate such as a silicon substrate or an insulating substrate. In addition, the substrate 101 may be a light-transmissive substrate for emitting a specific light source, and may be made of, for example, polyethylene terephthalate (PET). In an exemplary embodiment, the substrate 101 may be formed of a transparent oxide such as titanium oxide (TiO 2), tantalum oxide (Ta 2 O 5) or aluminum oxide (Al 2 O 3).

The dielectric structures 110 may be disposed on the substrate 101, and a plurality of the dielectric structures 110 may be spaced apart from each other by a predetermined distance. In addition, the dielectric structure 110 may have a rectangular parallelepiped shape and may be arranged to extend in a direction not shown. The dielectric structure 110 may be made of a thermosetting, thermoplastic and / or photocurable material, and may be a polymer resin layer. In an exemplary embodiment, the dielectric structure 110 may be made of polyurethane acrylate (PUA).

The metal structure 120 may be disposed on the upper surface of the substrate 101 so as to cover the upper surface and one side surface of the dielectric structure 110. The metal structure 120 may have a double-bent structure including at least two bends B1 and B2 that are bent in different directions at the top and bottom of the dielectric structure 110. [ Although FIG. 1 illustrates a structure in which the metal structure 120 covers the left side of the dielectric structure 110, the shape of the metal structure 120 is not limited thereto, and in some embodiments, the metal structure 120 may be a dielectric structure 110 on the right side. The total width W of the metal structure 120 on the substrate 101, that is, the length measured from the one end to the other end of the metal structure 120 on the substrate 101 may be in the range of 10 nm to 1000 nm And may extend in a strip shape along the dielectric structure 110 in a direction not shown. The metal structures 120 between adjacent dielectric structures 110 can be arranged to be spaced apart from one another. However, the number of the dielectric structures 110 and the metal structures 120 is not limited to the illustrated ones. In the exemplary embodiment, the sensing portion 100 includes only one dielectric structure 110 and the metal structure 120 It is possible. The structure of the metal structure 120 will be described in more detail with reference to Fig. 2 below.

The metal structure 120 may include at least one of gold (Au), silver (Ag), copper (Cu), aluminum (Al), and platinum (Pt) In an exemplary embodiment, depending on the material of the analyte 300, the surface of the metal structure 120 may further include a surface coating layer comprising a functional group that adsorbs the analyte 300.

The metal structure 120 senses the object to be analyzed 300 and may directly contact the object to be analyzed 300 or may sense the object 300 in proximity to the object. The plasmon resonance characteristic in the metal structure 120 can be changed by the analysis object 300 and the shape of the electromagnetic field can be changed. The analyte 300 may include, for example, a metal ion, a chemical substance, or a biomolecule such as DNA and protein.

The measurement unit 200 includes a light source unit 210 disposed at an upper portion of the sensing unit 100 and generating incident light incident on the metal structure 120 and a metal structure 120 disposed below the sensing unit 100, And a light receiving unit 220 that detects light that is changed by the analyte 300 located on the surface or the periphery of the analyte 300. The light source unit 210 may generate light having a wavelength of about 200 nm to 2000 nm, for example, and may generate infrared rays or visible light. In some embodiments, it may comprise a polarizer for polarizing the incident light. In some embodiments, the light-receiving unit 220 may be disposed on the substrate 101, such as the light source unit 210, according to the substance of the substrate 101, and may include an optical microscope And may further include a separate monitoring section.

The measurement unit 200 measures the plasmon resonance phenomenon in the metal structure 120 and measures the intensity of the plasmon resonance phenomenon in the metal structure 120 by using a UV-Vis spectrometer, which measures scattering, absorption or extinction characteristics, . ≪ / RTI > The measuring unit 200 measures the change of the resonant frequency of the analyte 300 such as the presence or absence of the analyte 300 around the metal structure 120 and the chemical reaction, And the change of the absorption value.

Unlike the structure in which the metal thin film is entirely coated on the substrate 101, the nano-plasmonic sensor 10 according to the embodiment of the present invention has a structure in which the metal thin films are separated from each other by the bending portions B1 and B2, The sensitivity can be improved by utilizing the resonance characteristics of the localized surface plasmon of the metal structures 120 by using the metal structures 120 whose width is in the nanometer range.

2 is a schematic perspective view showing a sensing unit according to an exemplary embodiment;

2, the metal structure 120 includes a first horizontal portion 121 disposed on an upper surface of the dielectric structure 110, a first horizontal portion 121 bent from one side of the dielectric structure 110, And a second horizontal part 123 bent from the vertical part 122 and disposed along the upper surface of the substrate 101. [ The first horizontal portion 121 and the second horizontal portion 123 may be bent in opposite directions about the vertical portion 122 and the metal structure 120 may be formed of a double- Structure. However, the vertical portion 122 is not necessarily perpendicular to the upper surface of the substrate 101, but may be arranged to be inclined at a predetermined angle with the upper surface of the substrate 101.

The length L1 of the first horizontal portion 121 on the dielectric structure 110 may be longer than the length L2 of the second horizontal portion 123 on the substrate 101, And may be formed to be stably separated from the structure 120. However, the relative lengths of the first horizontal portion 121 and the second horizontal portion 123 are not limited thereto, and may be variously changed in the embodiments. The length L1 of the first horizontal portion 121 may be in the range of 5 nm to 500 nm, for example, in the range of 50 nm to 90 nm. The length L2 of the second horizontal portion 123 may be in the range of 5 nm to 500 nm, for example, in the range of 20 nm to 60 nm. The height H of the vertical portion 122 on one side of the dielectric structure 110 can range from 20 nm to 500 nm and can range, for example, from 80 nm to 120 nm. The length L1 of the first horizontal portion 121, the length L2 of the second horizontal portion 123 and the height H of the vertical portion 122 in the bent direction ) May range from 30 nm to 1500 nm, for example, from 180 nm to 240 nm.

The dielectric structures 110 adjacent to one end of the second horizontal portion 123 may be spaced apart from one another. The distance L3 between one end of the second horizontal portion 123 and the dielectric structure 110 adjacent to the second horizontal portion 123 may be in the range of 10 nm to 300 nm and may be in the range of 70 nm to 110 nm . The spacing L3 may be determined so that adjacent metal structures 120 are formed only on one side wall of the dielectric structure 110 and are not connected to each other between adjacent dielectric structures 110. [ The metal structure 120 may be arranged to extend elongated along the dielectric structure 110 in the double-not-bent direction. The length L4 of the metal structure 120 in this direction may be determined in consideration of the size of the sensor unit 100 and may range from several hundred nanometers to several tens of centimeters.

The thickness T1 and T2 of the metal structure 120 may range from 1 nm to 200 nm and at least the first horizontal portion 121, the vertical portion 122 and the second horizontal portion 123 may be continuous films Can be determined by the thickness that can be formed. The thickness of the metal structure 120 is greater than the thickness T1 on the side surface of the dielectric structure 110 i.e. the thickness T1 in the vertical portion 122 and the thicknesses of the first horizontal portion 121 and the second horizontal portion 123, The thicknesses T2 of the first and second layers may be the same or different.

3A and 3B are schematic perspective views of a sensing unit according to an exemplary embodiment.

Referring to FIG. 3A, the sensing unit 100 may include dielectric structures 110 that are spaced apart from each other in one direction, for example, the x direction, so that the metal structures 110, which are in contact with the respective dielectric structures 110, 120 may also be disposed apart from each other. The dielectric structures 110 and the metal structures 120 may extend along the upper surface of the substrate 101 in one direction perpendicular to the x direction, for example, the y direction. The number of the dielectric structures 110 and the metal structures 120 disposed on the substrate 101 in the sensing unit 100 is not limited to that shown in the drawings and may be a desired size of the sensing unit 100, And the size and type of the object to be analyzed.

Referring to FIG. 3B, the sensing unit 100a may include a substrate 101, a dielectric structure 110a, and a metal structure 120a.

In this embodiment, dielectric structures 110 and metal structures 120 may have a predetermined length in the y direction and be spaced apart from each other, unlike in the embodiment of FIG. Thus, the metal structures 120 may have a three-dimensional structure that is spaced apart in both the x and y directions.

FIGS. 4A through 4C are schematic views showing major steps of a method of manufacturing a nanoplasmonic sensor according to an exemplary embodiment.

Referring to FIG. 4A, a dielectric layer 110P may be formed using an airbrush 410 on a substrate 101. FIG.

The substrate 101 may correspond to a substrate that forms a part of a nanoplasmonic sensor, the layer of which the metal structure 120 (see FIG. 1) is formed on the upper surface thereof. The substrate 101 may be selected from a semiconductor substrate or an insulating substrate. Further, the substrate 101 may be a light-transmitting substrate, and may transmit a specific light source.

The dielectric layer 110P may be made of a thermosetting, thermoplastic, and / or photo-curing material, and may be a polymer resin layer, which may be a dielectric layer 110 (see FIG. 1) through a subsequent process. The dielectric layer 110P may be formed uniformly using the airbrush 410 as shown in FIG. 4A, but is not limited thereto. For example, the dielectric layer 110P may be applied on the substrate 101 by spin coating, screen printing, spraying, or the like. The thickness of the dielectric layer 110P may be selected according to the size of the metal structure 120 to be formed.

Referring to FIG. 4B, the dielectric layer 110 may be formed by patterning the dielectric layer 110P.

The dielectric layer 110P may be formed using a nanoimprint process. In this case, an imprint mold 420 having a nano-sized line pattern can be used. In an exemplary embodiment, the imprint mold 420 may be prepared in the form of a roller, made of a flexible material, as shown at the top of FIG. 4B. In this case, the imprint mold 420 may be made of, for example, polydimethylsiloxane (PDMS). The dielectric layer 110P may be pressed and patterned by the imprint mold 420 to form the dielectric structure 110. A UV lamp 430 may be disposed inside the imprint mold 420 and may be used to cure the dielectric layer 110P if the dielectric layer 110P is made of a photo-curable material. When the roller-shaped imprint mold 420 is used as described above, the dielectric structure 110 can be easily formed on the substrate 101 having a large area.

However, the method of manufacturing the dielectric structure 110 is not limited thereto, and may be formed by a photolithography process and an etching process. In some embodiments, some dielectric layer 110P material may remain on the top surface of the substrate 101 between the dielectric structures 110 and the remaining dielectric layer 110P material may be removed by an additional process.

Referring to FIG. 4C, a metal material may be deposited on the substrate 101 and the dielectric structure 110 to form the metal structure 120.

The metal structure 120 may be formed on one side of the upper surface of the exposed substrate 101 and the upper surface of the dielectric structure 110. The metal structure 120 may be formed by arranging the substrate 101 and the metal material source such that the substrate 101 and the source of the metal material have a predetermined inclination, To be deposited and deposited.

In this case, the shape of the formed metal structure 120 may be changed according to the angle?. Therefore, in the present embodiment, the metal material is deposited on the upper surface and the side surface of the dielectric structure 110, so that the metal structures 120 are not connected between the dielectric structures 110 adjacent to each other. can be adjusted. The angle may be, for example, in the range of 20 to 60 degrees and may vary depending on the height and width of the dielectric structure 110, the spacing distance between the dielectric structures 110, the thickness of the metal structure 120, Can be selected as an angle satisfying the above-mentioned condition in consideration of the above-mentioned conditions. This will be described in more detail below with reference to Figs. 6A to 6C. In this embodiment, the metal material is supplied and deposited at a predetermined angle (?) With respect to the substrate 101, so that a double-bending structure can be realized by only one vapor deposition process, and a lift- So that the manufacturing process can be simplified.

The metal structure 120 may be formed using physical vapor deposition (PVD) such as thermal evaporation, electron beam evaporation, or sputtering .

In this embodiment, the dielectric structure 110 is not separately removed on the substrate 101, thereby simplifying the manufacturing process. However, the present invention is not limited thereto. In an exemplary embodiment, the dielectric structure 110 may be removed using a separate wet etching process or the like so that the metal structure 120 is left.

5 is a schematic cross-sectional view of an apparatus for manufacturing a nanoplasmonic sensor according to an exemplary embodiment.

5, an apparatus 1000 for manufacturing a nanoplasmonic sensor includes a supply roll 401, a take-up roll 402, an air brush 410, an imprint mold 420, a UV lamp 430, and a deposition chamber 440). The fabrication of the nanoplasmonic sensor described above with reference to Figs. 4A to 4C can be performed using the apparatus 1000 for fabricating the nanoplasmonic sensor.

The feed roll 401 and the take-up roll 402 can feed and wind the substrate 101. In this case, the substrate 101 may be a flexible substrate. When the substrate 101 is not a flexible substrate, the feed roll 401 and the take-up roll 402 may serve to move the substrate 101 so that the manufacturing process progresses sequentially.

The air brush 410 may be used to form the dielectric layer 110P on the substrate 101 as described above with reference to Fig. The patterning process may be performed on the coated dielectric layer 110P using the imprint mold 420 and the UV lamp 430 so that the dielectric structure 110 can be formed.

The chamber 440 may have an outlet 442 and may be maintained at a lower air pressure than the atmospheric pressure by venting air to the outlet 442 by a pump or the like not shown. In the chamber 440, a metal material source 445 may be provided, from which a metal material may be supplied and deposited on the substrate 101.

According to the nanoplatemonic sensor manufacturing apparatus 1000 of the present embodiment, the imprinting process is performed using a roll-to-roll method, so that the process efficiency can be improved and the mass productivity can be improved. However, as shown, the entire manufacturing process is not necessarily performed in a roll-to-roll manner, and at least some processes can be performed in this manner. In an exemplary embodiment, after the imprint process for forming the dielectric structure 110 is performed in a roll-to-roll process, the process of forming the metal structure 120 may be performed by moving the substrate 101 to a separate deposition apparatus .

FIGS. 6A to 6C are cross-sectional views for explaining a step in a method of manufacturing a nanoplasmonic sensor according to an exemplary embodiment.

6A to 6C, a metal structure 120 is formed in a step of forming the metal structure 120 described above with reference to FIG. 4C according to the angle θ at which the metal material is supplied to the substrate 101, Are shown.

As shown in FIG. 6A, when the angle? Is relatively small, the metal material may not be deposited on the side wall of the insulator structure 110 or may not be deposited as a continuous film. Therefore, as shown, the metal structures 120L may be formed on the insulator structure 110 and the substrate 101, respectively, and may not be connected to each other.

The metal material is deposited only on one side of the dielectric structure 110 and extends from the top surface of the dielectric structure 110 to the substrate 101 The metal structure 120 may be formed. Also, the metal structures 120 may not be connected between adjacent dielectric structures 110. The angle may be, for example, in the range of 10 to 80 degrees, which may be the height and width of the dielectric structure 110, the spacing distance between the dielectric structures 110, The thickness of the substrate 120, and the like.

As shown in FIG. 6C, when the angle? Is relatively large, the metal material may not be deposited on the lower sidewall of the insulator structure 110 and on the upper surface of the substrate 101. Thus, as shown, the metal structure 120H may be formed only at the top of the insulator structure 110. [ It may be a structure that occurs because the metallic material can not reach the region near the substrate 101 because it is covered by the adjacent insulator structure 110.

As described above, in the embodiment of the present invention, the angle θ at which the metal material is supplied to the substrate 101 is appropriately selected in relation to the size and arrangement of the dielectric structure 110, A metal structure 120 having a maximum length can be formed in the metal structure 120 and a vibration path of plasmons generated by the metal structure 120 can be secured. Therefore, by using the double-folded metal structure 120 as in the present invention, it is possible to maximize the number of the metal structures 120 formed in the unit area, and at the same time to suppress the vibration path of the plasmons in the respective metal structures 120 Can be maximized.

7A to 7C are graphs showing measurement results using an exemplary nanoplasmonic sensor.

The nanoplasmonic sensors used in the measurement had the structures shown in Figs. 6A to 6C, respectively, and the deposition angles of the gold (Au) forming the metal structures 120 were differently manufactured. Specifically, the nanoplasmonic sensors are fabricated by forming dielectric structures 110 made of PUA on a substrate 101 made of PET and then forming metal structures 120 made of gold (Au) In the case of 7a,? Was formed at 5 °, Fig. 7b was formed at 35 °, and Fig. 7c was formed at 50 °. Dielectric structures 110 were formed with a width of about 70 nm and a height of about 100 nm and the thickness of metal structures 120 on dielectric structures 110 and substrate 101 was about 20 nm. The metal structures 120 are formed on the substrate 101 to have a length of about 40 nm so that the total length along the bending direction of the metal structure 120 is about 210 nm.

FIGS. 7A to 7C show results of measurement of absorption spectra in water, which is air and de-ionized water, respectively, using the nanoplasmonic sensors. The plasmon resonance condition of the metal structure 120 is changed according to the refractive index of the surrounding material, thereby changing the absorption spectrum. When the three graphs are compared and analyzed, the absorption spectrum changes according to the surrounding environment of the metal structure 120, and shows different peak wavelengths in air and deionized water. However, in FIG. 7A, the shift of the peak wavelength is not clearly shown, and in FIG. 7C, the shift of the peak wavelength is relatively small. As shown in FIG. 7B, the double-folded embodiment of the present invention exhibited the largest peak wavelength shift according to the change of the surrounding material, and shifted about three times as compared with the one-folded structure of FIG. 7C. According to the result of FIG. 7C, the sensor of the double-curved structure exhibited a refractive index sensitivity characteristic of about 210 nm / RIU, and the figure of merit of the sensor was about 4.2.

According to a separate simulation result, the nanoplasmonic sensor of the present invention exhibited an extinction peak at a long wavelength of about 810 nm, unlike a metal structure having no double-bending structure. Simulation results show that the first horizontal portion 121, the vertical portion 122 and the second horizontal portion 123 of FIG. 2 function as electric dipoles at relatively short wavelengths, such as about 560 nm, At the long wavelength, the entire metal structure 120 can act as one electric dipole with a long oscillation length. In this way, particularly at the excitation wavelength of a long wavelength, the long vibration length of the surface plasmon can increase the sensitivity of the sensor. In the case of the embodiment of the present invention, the metal structure 120 may be bent twice in the same area of the substrate 101 to have a relatively long length, and thus the local electric field as described above can be formed, .

8A and 8B are graphs showing measurement results using an exemplary nanoplasmonic sensor.

8A and 8B, the absorption spectra of β-amyloid peptide aqueous solutions at different concentrations were measured using a nanoplasmonic sensor. Beta amyloid peptides are known as biomarkers for Alzheimer's disease. A beta amyloid aqueous solution was measured by evaporation on the surface of the sensor, and the mass of beta amyloid remaining on the sensor surface ranged from 2 x 10 -15 g to 2 x 10 -10 g.

As shown in FIG. 8A, the refractive index around the metal structure is changed by the beta amyloid molecule, and the spectral peak is shifted. As shown in Figure 8b, the mass of beta-amyloid from 2 × 10 was greater than -14 g sprung movement of the spectrum, the mass spectrum to be 2 × 10 -10 g or move in the saturation (saturation) appear. Therefore, it can be seen that the minimum measurement limit of the sensor is about 20 femtograms, and it can be confirmed that the nanoplasmonic sensor according to the embodiment of the present invention can be used as a molecular sensor having a sensitivity of femtogram level.

The present invention is not limited to the above-described embodiment and the accompanying drawings, but is intended to be limited by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

10: Nanoplasmonic sensor
101: substrate
110: dielectric structure
120: Metal structures
121: first horizontal part
122:
123: second horizontal part
200:
210:
220:
300: analyte

Claims (15)

Board;
At least one dielectric structure disposed to extend in one direction on the substrate;
A metal structure that covers an upper surface and a side surface of the dielectric structure and extends to an upper surface of the substrate, the metal structure sensing an analyte; And
And a measurement unit for measuring a local surface plasmon resonance phenomenon in the metal structure.
The method according to claim 1,
The metal structure may comprise
A first horizontal portion disposed on an upper surface of the dielectric structure;
A vertical portion bent from the first horizontal portion and disposed along one side of the dielectric structure; And
And a second horizontal portion bent from the vertical portion and disposed along an upper surface of the substrate.
3. The method of claim 2,
And the second horizontal portion is bent from the vertical portion in a direction opposite to the first horizontal portion.
3. The method of claim 2,
Wherein the length of the first horizontal portion is longer than the length of the second horizontal portion.
The method according to claim 1,
Wherein the overall width of the metal structure is in the range of 10 nm to 1000 nm.
The method according to claim 1,
Wherein the thickness of the metal structure ranges from 1 nm to 200 nm.
The method according to claim 1,
Wherein the dielectric structure has a rectangular parallelepiped shape.
The method according to claim 1,
Wherein the plurality of dielectric structures are spaced apart from each other by a predetermined distance.
The method according to claim 1,
Wherein the measuring unit comprises:
A light source unit disposed on the substrate and generating incident light incident on the metal structure; And
And a light receiving portion disposed at a lower portion of the substrate and detecting light that is changed by the analyte located on or around the surface of the metal structure.
The method according to claim 1,
Wherein the substrate is a flexible substrate.
A metal structure including at least two bends bent in different directions, the metal structure sensing an analyte; And
And a measurement unit for measuring a local surface plasmon resonance phenomenon in the metal structure.
12. The method of claim 11,
Further comprising a dielectric structure having a hexahedral shape,
Wherein the metal structure is disposed on one side of the dielectric structure and the bends are bent in opposite directions at the top and bottom of the dielectric structure.
Forming a dielectric layer on the substrate;
Forming a dielectric structure by patterning the dielectric layer by an imprint process using a mold including a nano pattern; And
A metal material is deposited on the substrate at a predetermined angle to deposit a metal material on the upper surface and one side of the dielectric structure and a part of the exposed upper surface of the substrate to detect an analyte to cause local surface plasmon resonance And forming a metal structure for forming the nanoplasmonic sensor.
14. The method of claim 13,
Wherein the metal material is supplied at an angle of 10 DEG to 80 DEG with respect to a direction perpendicular to the substrate.
14. The method of claim 13,
Wherein at least some of the steps are performed in a roll to roll nanoimprint process.
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