WO2018169119A1

WO2018169119A1 - Nanoplasmonic sensor and manufacturing method therefor

Info

Publication number: WO2018169119A1
Application number: PCT/KR2017/003590
Authority: WO
Inventors: 위정섭; 옥종걸
Original assignee: 한국표준과학연구원; 서울과학기술대학교 산학협력단
Priority date: 2017-03-17
Filing date: 2017-03-31
Publication date: 2018-09-20
Also published as: KR20180107381A; KR101904206B1

Abstract

A nanoplasmonic sensor according to the present invention comprises: a substrate; at least one dielectric structure arranged on the substrate so as to extend in one direction; a metal structure covering the top surface and one side surface of the dielectric structure and arranged so as to extend to the top surface of the substrate; and a measurement part for measuring a local surface plasmon resonance phenomenon in the metal structure. In addition, a method for manufacturing a nanoplasmonic sensor, of the present invention, comprises the steps of: forming a dielectric layer on a substrate; forming a dielectric structure by using a mold, which includes a nanopattern, and patterning the dielectric layer; and supplying a metal material for the substrate at a predetermined angle so as to deposit the metal material on one part of the exposed top surface of the substrate, thereby forming a metal structure.

Description

Nano plasmonic sensor and manufacturing method thereof

The present invention relates to a nano plasmonic sensor and a method for manufacturing the same, and more particularly, to a nano plasmonic sensor using a local surface plasmon resonance phenomenon in a metal structure and a method for manufacturing the same.

Plasmon resonance is a phenomenon caused by the behavior of free electrons in a metal. When light enters between a metal surface and a dielectric, the free electrons on the metal surface vibrate collectively due to resonance with the electromagnetic field of specific energy. It is a phenomenon.

Surface Plasmon Resonance (SPR) refers to a phenomenon in which resonance occurs by quantized vibration of free electrons propagating along the surface of a metal thin film. On the other hand, a metal structure of several nm to several hundred nm size of the metal rather than the metal thin film is caused by the collective vibration of the electrons in the conduction band by light of a specific wavelength incident from the outside to have an electric dipole or multi-pole characteristics. As a result, unlike in the bulk state, the light is strongly scattered and absorbed in the wavelength region, and the electromagnetic field in the local region is increased, which is called Local Surface Plasmon Resonance (LSPR). In particular, using optical phenomena caused by plasmon resonance in nanoscale metal structures made of noble metals such as Au and Ag, devices such as real-time chemical / biological sensors have been extensively studied. have.

One of the technical problems of the present invention is to provide a nano plasmonic sensor using a local surface plasmon resonance phenomenon in a metal structure and a method of manufacturing the same.

Nanoplasmic sensor according to the exemplary embodiments, the substrate, at least one dielectric structure disposed to extend in one direction on the substrate, the upper surface and one side of the dielectric structure is disposed to extend to the upper surface of the substrate And a measuring unit for measuring a local surface plasmon resonance phenomenon in the metal structure.

For example, the metal structure may include a first horizontal portion disposed on an upper surface of the dielectric structure, a vertical portion bent from the first horizontal portion and disposed along one side of the dielectric structure, and bent from the vertical portion. It may include a second horizontal portion disposed along the upper surface of the substrate.

For example, the second horizontal portion may be bent in a direction opposite to the first horizontal portion from the vertical portion.

For example, the length of the first horizontal portion may be longer than the length of the second horizontal portion.

For example, the overall width of the metal structure may range from 10 nm to 1000 nm.

For example, the thickness of the metal structure may range from 1 nm to 200 nm.

For example, the dielectric structure may have a rectangular parallelepiped shape.

For example, the plurality of dielectric structures may be disposed spaced apart from each other by a predetermined distance.

For example, the measurement unit may be disposed on an upper portion of the substrate, and may include a light source unit generating incident light incident on the metal structure, and an analysis object disposed below or on the surface of the metal structure. It may include a light receiving unit for detecting the light to be changed.

For example, the substrate may be a flexible substrate.

The nano plasmonic sensor according to the exemplary embodiments may include a metal structure including at least two bent portions bent in different directions, and a measuring unit measuring a local surface plasmon resonance phenomenon in the metal structure.

For example, the structure may further include a dielectric structure having a hexahedron shape, wherein the metal structure may be disposed on one side of the dielectric structure, and the bent portions may be bent in opposite directions from each other at the upper and lower portions of the dielectric structure.

According to exemplary embodiments, a method of manufacturing a nano plasmonic sensor may include forming a dielectric layer on a substrate, patterning the dielectric layer using a mold including a nano pattern, and forming a dielectric structure on the substrate. Supplying the metal material at a predetermined angle with respect to the metal material, thereby depositing the metal material on the top and one side of the dielectric structure and a portion of the exposed top surface of the substrate to form the metal structure.

For example, the metal material may be supplied at an angle of 10 ° to 80 ° with respect to the direction perpendicular to the substrate.

For example, at least some of the above steps may be performed by a roll to roll nanoimprint process.

A highly sensitive nano plasmonic sensor can be provided by extending the oscillation path of the local surface plasmon using a metal structure having two bends.

In addition, a method of manufacturing a nanoplasmonic sensor that can manufacture a nanosensitized sensor having high sensitivity by controlling the shape of a metal structure can be provided.

Various and advantageous advantages and effects of the present invention is not limited to the above description, it will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a schematic cross-sectional view of a nano plasmonic sensor in accordance with an exemplary embodiment.

2 is a schematic perspective view illustrating a sensing unit according to an exemplary embodiment.

3A and 3B are schematic perspective views of a sensing unit according to an exemplary embodiment.

4A to 4C are schematic step-by-step diagrams illustrating a method of manufacturing a nano plasmonic sensor according to an exemplary embodiment.

5 is a schematic cross-sectional view of an apparatus for manufacturing a nano plasmonic sensor according to an exemplary embodiment.

6A to 6C are cross-sectional views illustrating one step of a method of manufacturing a nano plasmonic sensor according to an exemplary embodiment.

7A-7C are graphs showing measurement results using an exemplary nano plasmonic sensor.

8A and 8B are graphs showing measurement results using an exemplary nano plasmonic sensor.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

Embodiments of the present invention may be modified in various other forms, or various embodiments may be combined, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

Referring to FIG. 1, the nano plasmonic sensor 10 includes a sensing unit 100 and a measuring unit 200. The sensing unit 100 may detect a change in the plasmon resonance characteristic by the analyte 300, and the measurement unit 200 may detect a change in the optical characteristic. The nano plasmonic sensor 10 may be used for the detection, measurement, and analysis of biomolecules such as biological enzymes, cells, and proteins, and chemicals using plasmon resonance.

The sensing unit 100 may include a substrate 101, a dielectric structure 110, and a metal structure 120.

The substrate 101 may be selected from a conventional semiconductor substrate such as a silicon substrate or an insulating substrate. In addition, the substrate 101 may be a translucent substrate that transmits a specific light source, and may be made of, for example, polyethylene terephthalate (PET). In an exemplary embodiment, the substrate 101 may be made of a transparent oxide such as titanium oxide (TiO ₂ ), tantalum oxide (Ta ₂ O ₅ ), aluminum oxide (Al ₂ O ₃ ), or the like.

The dielectric structures 110 may be disposed on the substrate 101, and a plurality of dielectric structures 110 may be spaced apart at predetermined intervals in one direction. In addition, the dielectric structure 110 may have a rectangular parallelepiped shape and may be disposed to extend in a direction not shown. The dielectric structure 110 may be made of a thermosetting, thermoplastic and / or photocurable material, and may be a polymer resin layer. In an exemplary embodiment, the dielectric structure 110 may be made of polyurethane acrylate (PUA).

The metal structure 120 may cover the top surface and one side surface of the dielectric structure 110 and extend to the top surface of the substrate 101. The metal structure 120 may have a double-bent structure including at least two bent portions B1 and B2 that are bent in different directions at the top and the bottom of the dielectric structure 110. 1 illustrates a structure in which the metal structure 120 covers the left side surface of the dielectric structure 110, but the shape of the metal structure 120 is not limited thereto, and in some embodiments, the metal structure 120 may include the dielectric structure ( It may have a structure covering the right side of the 110. The overall width W of the metal structure 120 on the substrate 101, that is, the length measured from one end to the other end of the metal structure 120 on the substrate 101 may range from 10 nm to 1000 nm. In the non-illustrated direction, it may be extended along the dielectric structure 110 to form a strip. The metal structures 120 may be disposed to be spaced apart from each other without contact between the adjacent dielectric structures 110. However, the number of the dielectric structures 110 and the metal structures 120 is not limited to those shown, and in the exemplary embodiment, the sensing unit 100 may include only one dielectric structure 110 and the metal structures 120. It may be. The structure of the metal structure 120 will be described in more detail with reference to FIG. 2 below.

The metal structure 120 may include at least one of gold (Au), silver (Ag), copper (Cu), aluminum (Al), and platinum (Pt), and may be made of an alloy thereof. In an exemplary embodiment, depending on the material of the analyte 300, the surface of the metal structure 120 may further include a surface coating layer including a functional group that adsorbs the analyte 300.

The metal structure 120 may detect the analyte 300, and may be in contact with the analyte 300 directly or in proximity to the analyte 300. The plasmon resonance characteristic of the metal structure 120 may be changed by the analyte 300, and the shape of the electromagnetic field may be changed. The analyte 300 may include, for example, metal ions, chemicals, or biomolecules such as DNA and proteins.

The measurement unit 200 is disposed above the sensing unit 100 and disposed under the light source unit 210 and the sensing unit 100 that generate incident light incident to the metal structure 120, and the metal structure 120. It may include a light receiving unit 220 for detecting the light is changed by the analysis object 300 is located on the surface or the periphery. The light source unit 210 may generate light having a wavelength of about 200 nm to 2000 nm, for example, may generate infrared light or visible light. In some embodiments, a polarizer may be included to polarize incident light. In some embodiments, the light receiving unit 220 may be disposed on the substrate 101, such as the light source unit 210, depending on the material of the substrate 101, and may be combined with an optical microscope to observe the change of the analyte 300. The same separate monitoring unit may be further included.

The measuring unit 200 measures a plasmon resonance phenomenon in the metal structure 120 and, for example, a UV-Vis spectrometer that measures scattering, absorption or extinction characteristics. It may include. The measurement unit 200 may change the resonance frequency such as the presence or absence of the analyte 300 and the chemical reaction around the metal structure 120, or the scattering, absorption, It can measure by a change in absorbance value.

Nanoplasmonic sensor 10 according to an embodiment of the present invention, unlike the structure in which the metal thin film is entirely coated on the substrate 101, has a structure that is segmented from each other by the bent portions (B1, B2) in one direction By using metal structures 120 having a width in the nanometer range, the sensitivity of the localized surface plasmons of the metal structures 120 may be used to improve the sensitivity.

Referring to FIG. 2, the metal structure 120 is bent from the first horizontal portion 121 and the first horizontal portion 121 disposed on the top surface of the dielectric structure 110 to form one side or sidewall of the dielectric structure 110. It may include a vertical portion 122 and a second horizontal portion 123 bent from the vertical portion 122 disposed along the upper surface of the substrate 101. The first horizontal part 121 and the second horizontal part 123 may be bent in opposite directions with respect to the vertical part 122, and the metal structure 120 may be double-bended including at least two bent parts. It may have a structure. However, the vertical portion 122 does not necessarily have to be perpendicular to the upper surface of the substrate 101, but may be disposed to be inclined at a predetermined angle with the upper surface of the substrate 101.

The length L1 of the first horizontal portion 121 on the dielectric structure 110 may be longer than the length L2 of the second horizontal portion 123 on the substrate 101. It may be formed to be stably separated from the structure 120. However, the relative lengths of the first horizontal part 121 and the second horizontal part 123 are not limited thereto and may be variously changed in the embodiments. The length L1 of the first horizontal portion 121 may be in the range of 5 nm to 500 nm, for example, in the range of 50 nm to 90 nm. The length L2 of the second horizontal portion 123 may be in a range of 5 nm to 500 nm, for example, in a range of 20 nm to 60 nm. The height H of the vertical portion 122 on one side of the dielectric structure 110 may range from 20 nm to 500 nm, for example, may range from 80 nm to 120 nm. In the bent direction, the entire length of the metal structure 120, that is, the length L1 of the first horizontal part 121, the length L2 of the second horizontal part 123, and the height H of the vertical part 122. ) May range from 30 nm to 1500 nm, for example, from 180 nm to 240 nm.

The dielectric structure 110 adjacent to one end of the second horizontal portion 123 may be spaced apart from each other. The separation distance L3 between one end of the second horizontal portion 123 and the dielectric structure 110 adjacent thereto may be in a range of 10 nm to 300 nm, for example, in a range of 70 nm to 110 nm. Can be. The separation distance L3 may be determined in a range in which adjacent metal structures 120 are formed only on one sidewall of the dielectric structure 110 and are not connected to each other between adjacent dielectric structures 110. The metal structure 120 may be arranged to extend along the dielectric structure 110 in a non-double bent direction. The length L4 of the metal structure 120 in the direction may be determined in consideration of the size of the sensor unit 100 and may range from several hundred nanometers to several tens of centimeters.

The thicknesses T1 and T2 of the metal structure 120 may range from 1 nm to 200 nm, and at least the first horizontal portion 121, the vertical portion 122, and the second horizontal portion 123 may form a continuous film. It can be determined by the thickness that can be formed. The thickness of the metal structure 120 is the thickness T1 on the side of the dielectric structure 110, that is, the thickness T1 at the vertical portion 122 and the first horizontal portion 121 and the second horizontal portion 123. The thickness T2 at may be the same or different.

Referring to FIG. 3A, the sensing unit 100 may be disposed with the dielectric structures 110 spaced apart from each other in one direction, for example, the x direction, thus contacting each of the dielectric structures 110. The 120 may also be spaced apart from each other. In one direction perpendicular to the x direction, for example, the y direction, the dielectric structures 110 and the metal structures 120 may extend along the top surface of the substrate 101. In the sensing unit 100, the number of the dielectric structures 110 and the metal structures 120 disposed on the substrate 101 is not limited to those shown in the drawings, and the desired size of the sensing unit 100, And various sizes according to the size and type of the analyte.

Referring to FIG. 3B, the sensing unit 100a may include a substrate 101, a dielectric structure 110a, and a metal structure 120a.

In the present embodiment, unlike the embodiment of FIG. 3A, the dielectric structures 110 and the metal structures 120 may be spaced apart from each other with a predetermined length in the y direction. Therefore, the metal structures 120 may have a three-dimensional structure spaced apart in both the x and y directions.

Referring to FIG. 4A, the dielectric layer 110P may be formed on the substrate 101 by using an airbrush 410.

Substrate 101 is a layer in which a metal structure 120 (see FIG. 1) is formed on the upper surface of the substrate 101 may correspond to a substrate forming a part of the nano plasmonic sensor. The substrate 101 may be selected from a semiconductor substrate or an insulating substrate. In addition, the substrate 101 may be a light transmissive substrate, and may transmit a specific light source.

The dielectric layer 110P is a layer forming the dielectric structure 110 (see FIG. 1) through a subsequent process, and may be made of a thermosetting, thermoplastic and / or photocurable material, and may be a polymer resin layer. The dielectric layer 110P may be evenly formed using the airbrush 410 as shown in FIG. 4A, but is not limited thereto. For example, the dielectric layer 110P may be applied onto the substrate 101 by spin coating, screen printing, spraying, or the like. The thickness of the dielectric layer 110P may be selected according to the size of the metal structure 120 to be formed.

Referring to FIG. 4B, the dielectric layer 110P may be patterned to form the dielectric structure 110.

The dielectric layer 110P may be formed using a nano imprint process. In this case, an imprint mold 420 having a nano-sized line pattern may be used. In an exemplary embodiment, the imprint mold 420 may be made of a flexible material and prepared in the form of a roller, as shown at the top of FIG. 4B. In this case, the imprint mold 420 may be made of, for example, polydimethylsiloxane (PDMS). The dielectric layer 110P may be pressed and patterned by the imprint mold 420 to form the dielectric structure 110. The UV lamp 430 may be disposed inside the imprint mold 420, and may be used to cure the dielectric layer 110P when the dielectric layer 110P is formed of a photocurable material. As such, when using the roller-shaped imprint mold 420, the dielectric structure 110 may be easily formed on the large-area substrate 101.

However, the method of manufacturing the dielectric structure 110 is not limited thereto, and may be formed by a photolithography process and an etching process. In some embodiments, some of the dielectric layer 110P material may remain on the upper surface of the substrate 101 between the dielectric structures 110, and the remaining dielectric layer 110P material may be removed by an additional process.

Referring to FIG. 4C, a metal material may be deposited on the substrate 101 and the dielectric structure 110 to form the metal structure 120.

The metal structure 120 may be formed on one side of the top surface of the exposed substrate 101 and the top surface of the dielectric structure 110. The metal structure 120 arranges the substrate 101 and the metal material source such that the substrate 101 and the source of the metal material have a predetermined slope so that the metal material has a predetermined angle θ with respect to the substrate 101. It can be formed by being supplied and deposited.

In this case, according to the angle θ, the shape of the metal structure 120 to be formed may be changed. Therefore, in the present embodiment, the metal material is deposited on the upper surface and one side of the dielectric structure 110, so that the metal structures 120 are not connected between the dielectric structures 110 adjacent to each other. θ) can be adjusted. The angle θ may be, for example, in a range of 20 ° to 60 °, the height and width of the dielectric structure 110, the separation distance between the dielectric structures 110, the thickness of the metal structure 120, and the like. In consideration of this, it may be selected at an angle satisfying the above conditions. This will be described in more detail with reference to FIGS. 6A to 6C below. In this embodiment, the metal material is supplied with a predetermined angle (θ) with respect to the substrate 101 to be deposited, so that a double-bending structure can be realized by only one deposition process, and a lift-off process. Since no separate process is required, the manufacturing process can be simplified.

The metal structure 120 may be formed using, for example, physical vapor deposition (PVD), such as thermal evaporation, electron beam evaporation, or sputtering. .

In the present embodiment, the dielectric structure 110 is not separately removed on the substrate 101, thereby simplifying the manufacturing process. However, the present invention is not limited thereto, and in an exemplary embodiment, the dielectric structure 110 may be removed using a separate wet etching process so that only the metal structure 120 remains.

Referring to FIG. 5, the apparatus 1000 for manufacturing a nanoplasmonic sensor includes a supply roll 401, a winding roll 402, an airbrush 410, an imprint mold 420, a UV lamp 430, and a deposition chamber ( 440). The nanoplasmonic sensor described above with reference to FIGS. 4A to 4C may be performed using the apparatus 1000 for manufacturing the nanoplasmonic sensor.

The supply roll 401 and the winding roll 402 may feed and wind the substrate 101. In this case, the substrate 101 may be a flexible substrate. When the substrate 101 is not a flexible substrate, the supply roll 401 and the winding roll 402 may serve to move the substrate 101 so that the manufacturing process proceeds sequentially.

The airbrush 410 may be used to form the dielectric layer 110P on the substrate 101 as described above with reference to FIG. 4A. The patterning process may be performed using the imprint mold 420 and the UV lamp 430 on the coated dielectric layer 110P, whereby the dielectric structure 110 may be formed.

The chamber 440 may include an outlet 442, and may be maintained at an atmospheric pressure lower than atmospheric pressure by discharging air to the outlet 442 by a pump (not shown). A metal material source 445 may be provided in the chamber 440, from which a metal material may be supplied and deposited on the substrate 101.

According to the apparatus 1000 for manufacturing a nanoplasmonic sensor of the present embodiment, by performing an imprint process using a roll to roll method, process efficiency may be improved and mass productivity may be improved. However, the entire manufacturing process does not have to be performed in a roll-to-roll manner as shown, and at least some processes may be performed in this manner. In an exemplary embodiment, after the imprint process for forming the dielectric structure 110 is performed in a roll-to-roll process, the process of forming the metal structure 120 may be performed by moving the substrate 101 to a separate deposition apparatus. .

6A to 6C, in the forming of the metal structure 120 described above with reference to FIG. 4C, the metal structure 120 is formed differently according to the angle θ supplied to the substrate 101. The shapes of are shown.

As shown in FIG. 6A, when the angle θ is relatively small, the metal material may not be deposited on the sidewall of the insulator structure 110 or may not be deposited as a continuous film. Thus, as shown, the metal structures 120L may be formed on the insulator structure 110 and the substrate 101, respectively, and thus may not be connected to each other.

When the angle θ is selected in an appropriate range as shown in FIG. 6B, the metal material is deposited on only one side of the dielectric structure 110, and extends from the top surface of the dielectric structure 110 to the substrate 101. The metal structure 120 may be formed. In addition, the metal structures 120 may not be connected between the dielectric structures 110 adjacent to each other. The angle θ may be, for example, in the range of 10 ° to 80 °, the angle θ being the height and width of the dielectric structure 110, the separation distance between the dielectric structures 110, the metal structure The thickness of 120 may vary.

As shown in FIG. 6C, when the angle θ is relatively large, the metal material may not be deposited on the lower sidewall of the insulator structure 110 and the upper surface of the substrate 101. Thus, as shown, the metal structure 120H may be formed only on the top of the insulator structure 110. This may be a structure caused by the metal material not reaching the region close to the substrate 101 because it is covered by the adjacent insulator structure 110.

As such, in the embodiment of the present invention, the angle θ at which the metal material is supplied to the substrate 101 is appropriately selected in relation to the size and arrangement of the dielectric structure 110, so that the same area as shown in FIG. 6B. In the metal structure 120 having the maximum length can be formed, it is possible to secure the vibration path of the plasmon generated by the metal structure 120. Thus, by using the double-bent metal structure 120 as in the present invention, the number of metal structures 120 formed in the unit area is maximized and at the same time the vibration path of the plasmon in each metal structure 120 It can be maximized.

The nano plasmonic sensors used for the measurement have a structure as shown in FIGS. 6A to 6C, respectively, and different deposition angles of gold (Au) forming the metal structures 120 are manufactured. Specifically, the nano plasmonic sensors are manufactured by forming the dielectric structures 110 made of PUA on the substrate 101 made of PET, and then forming the metal structures 120 made of gold (Au). In the case of 7a, θ was 5 °, Fig. 7B was formed under the condition that θ was 35 °, and Fig. 7C was 50 °. Dielectric structures 110 were formed with a width of about 70 nm and a height of about 100 nm, and the thickness of the metal structures 120 on the dielectric structures 110 and the substrate 101 was about 20 nm. The metal structures 120 are formed on the substrate 101 to a length of about 40 nm, and thus the total length along the bending direction of the metal structures 120 is about 210 nm.

7A to 7C show absorption spectra measured in water, which is air and de-ionized water, using the nanoplasmonic sensors, respectively. The plasmon resonance condition of the metal structure 120 is changed according to the refractive index of the surrounding material, thereby changing the absorption spectrum. When the three graphs are compared and analyzed, the absorption spectrum changes according to the surrounding environment of the metal structure 120, and shows different peak wavelengths in air and deionized water. However, in the case of FIG. 7A, the shift of the peak wavelength does not appear clearly, and in FIG. 7C, the shift of the peak wavelength is relatively small. In the case of the double-bent embodiment of the present invention as shown in Figure 7b showed the largest peak wavelength shift in accordance with the change of the surrounding material, it is about three times shifted compared to the structure once bent in Figure 7c. According to the results of FIG. 7C, the double-bended sensor exhibited a high index of refraction index of about 210 nm / RIU, and the figure of merit of the sensor was about 4.2.

According to a separate simulation result, the nano plasmonic sensor of the present invention exhibited an extinction peak at a long wavelength of about 810 nm, unlike a metal structure having no double-bending structure. Simulation results show that at relatively short wavelengths, such as about 560 nm, each of the first horizontal portion 121, the vertical portion 122, and the second horizontal portion 123 in FIG. 2 acts as an electric dipole, but at about 810 nm. At long wavelengths, the entire metal structure 120 may act as one electric dipole having a long oscillation length. As such, especially at long wavelength excitation wavelengths, the long vibration length of the surface plasmon can increase the sensitivity of the sensor. In the exemplary embodiment of the present invention, the metal structure 120 may be bent twice in the same substrate 101 area to have a relatively long length. Accordingly, such a local electric field may be formed, thereby improving the sensitivity of the sensor. Can be.

8A and 8B, absorbance spectra of aqueous solutions of beta amyloid peptides having different concentrations were measured using nanoplasmonic sensors. Beta amyloid peptides are known as biomarkers for Alzheimer's. The beta amyloid aqueous solution was measured by evaporation on the sensor surface, and the mass of beta amyloid remaining on the sensor surface was in the range of 2 × 10 ^-15 g to 2 × 10 ^-10 g.

As shown in FIG. 8A, it can be seen that the refractive index around the metal structure is changed by the beta amyloid molecule to shift the spectral peak. As shown in FIG. 8B, the spectral shift was observed when the mass of the beta amyloid was greater than 2 × 10 ⁻¹⁴ g, and the spectral shift was saturated when the mass was 2 × 10 ⁻¹⁰ g or more. appear. Accordingly, it can be seen that the measurement minimum limit of the sensor is about 20 femtograms, and the nanoplasmonic sensor according to the embodiment of the present invention can be used as a molecular sensor having a femtogram level sensitivity.

It is intended that the invention not be limited by the foregoing embodiments and the accompanying drawings, but rather by the claims appended hereto. Accordingly, various forms of substitution, modification, and alteration may be made by those skilled in the art without departing from the technical spirit of the present invention described in the claims, which are also within the scope of the present invention. something to do.

Nano plasmonic sensor according to an embodiment of the present invention can be used for the detection, measurement and analysis of biomolecules, such as biological enzymes, cells and proteins, and chemicals using plasmon resonance.

Claims

Board;

At least one dielectric structure disposed on the substrate to extend in one direction;

A metal structure covering the top surface and one side surface of the dielectric structure and extending to the top surface of the substrate; And

Nano plasmonic sensor comprising a measurement unit for measuring the local surface plasmon resonance phenomenon in the metal structure.
According to claim 1,

The metal structure,

A first horizontal portion disposed on an upper surface of the dielectric structure;

A vertical portion bent from the first horizontal portion and disposed along one side of the dielectric structure; And

And a second horizontal portion bent from the vertical portion and disposed along an upper surface of the substrate.
The method of claim 2,

And the second horizontal portion is bent from the vertical portion in a direction opposite to the first horizontal portion.
The method of claim 2,

The nano plasmonic sensor has a length longer than the length of the second horizontal portion.
According to claim 1,

The total width of the metal structure is a nano plasmonic sensor in the range of 10 nm to 1000 nm.
According to claim 1,

The thickness of the metal structure is a nano plasmonic sensor in the range of 1 nm to 200 nm.
According to claim 1,

The dielectric structure is a nano plasmonic sensor having a rectangular parallelepiped shape.
According to claim 1,

The dielectric structure is a plurality of nano-plasmonic sensor is arranged spaced apart from each other by a predetermined distance.
According to claim 1,

The measuring unit,

A light source unit disposed on the substrate and generating incident light incident on the metal structure; And

The nano plasmonic sensor disposed on the lower portion of the substrate, including a light receiving unit for detecting the light that is changed by the analyte located on or around the surface of the metal structure.
According to claim 1,

The substrate is a nano-plasmonic sensor is a flexible (flexible) substrate.
A metal structure including at least two bent portions bent in different directions; And

Nano plasmonic sensor comprising a measurement unit for measuring the local surface plasmon resonance phenomenon in the metal structure.
The method of claim 11, wherein

Further comprising a dielectric structure having a hexahedron shape,

The metal structure is disposed on one side of the dielectric structure, wherein the bent portion is bent in the opposite direction at the top and bottom of the dielectric structure nano plasmonic sensor.
Forming a dielectric layer on the substrate;

Patterning the dielectric layer using a mold including a nano pattern to form a dielectric structure; And

Supplying a metal material at a predetermined angle with respect to the substrate, thereby depositing a metal material on an upper surface and one side of the dielectric structure and a part of the exposed upper surface of the substrate to form a metal plasmonic sensor. Method of preparation.
The method of claim 13,

And the metal material is supplied at an angle of 10 ° to 80 ° with respect to the direction perpendicular to the substrate.
The method of claim 13,

At least some of the steps are performed in a roll to roll nanoimprint process.