KR101885766B1 - Strain Sensors and Mothod for Fabricating the Same - Google Patents

Abstract

According to embodiments of the present disclosure, it is possible to operate in a manner that senses a resistance change due to a deformation of a sensor itself having a three-dimensional structure in the action of an external force or an external pressure, thereby monitoring various fields, A strain sensor and a method of manufacturing the same are disclosed.

Description

TECHNICAL FIELD [0001] The present invention relates to a strain sensor and a fabrication method thereof,

The present disclosure relates to a strain sensor and a method of manufacturing the same. More particularly, the present disclosure relates to a strain sensor that can be applied to various fields by operating in a manner that detects a resistance change due to a deformation of a sensor itself having a three-dimensional structure when an external force or external pressure acts, .

Strain sensors are known as sensors that convert mechanical signals (eg, force, pressure, acceleration, displacement, torque, etc.) into electrical signals. When an external force is applied to both ends of a cylindrical specimen with a uniform cross-sectional area, resistance equal to the external force is generated on the section perpendicular to the axial direction. The resistance is uniformly distributed on the cross section and the sum is equal to the load. In this case, the resistance per unit area is called stress or stress and is denoted by?. On the other hand, when an external force is applied to an object, a change such as a length occurs, which is referred to as strain or strain and is denoted by ε. Generally, within the elastic limit range, there is a constant proportional relationship between stress (strain) and strain for a material such as:

[Equation 1]

Here, the proportional constant E is referred to as Young's modulus.

When pressure is applied to a structure to which a strain sensor is attached, the dimension of the conductor strip changes, and as a result, the resistance also changes. Therefore, when the strain sensor is attached to the surface of the object to be measured such as the device or the structure, it is possible to measure the strain (deformation) occurring on the surface according to the change of the resistance value in the resistance element. In general, the resistance value increases as the external force increases, but decreases as the resistance increases. As such, a strain sensor can be used to indicate the type and amount of deformation of a particular material (or material), and also when it is expected to predict the behavior of the material (or material) or to collect information about its properties .

Such a strain sensor is used in a variety of sensing fields, specifically, a load cell (a semiconductor load cell using a SUS630 diaphragm, such as a door cell, Journal of Sensor Science and Technology, Vol. 20, No. 3 (2011) 218), temperature and / or pressure sensors (e.g., KN Bhat, Silicon Micromachined Pressure Sensors, Journal of the Indian Institute of Science VOL 87: 1 Jan-Mar 2007; Japanese Unexamined Patent Publication No. 2003-35506, 2004 (For example, Japanese Patent Application Laid-open No. 10-206202), and the like, and are widely used in automobiles, ships, aviation, industrial measurement, braking control, etc. It is widely used in various fields. In particular, there are hundreds of various kinds of measuring instruments using strain sensors. For example, a load cell is a device that detects the change in physical load externally and converts it into an electrical signal. The pressure sensor can be used for hydraulic measurement, tire pressure measurement, brake fluid pressure measurement have.

Metal thin film strain sensors, which are small in size, excellent in durability and precision, and have a wide measuring range, have been used. In recent years, with the development of semiconductor integrated circuits and computer related technologies, a strain sensor with high sensitivity, .

The biosensor field can be exemplified as one of the extended application examples of the strain sensor. Specifically, there are cell monitoring techniques that measure the precise position of the cell, measure the movement, force, and state of the cell in real time. Mechanical factors such as force, geometry and stiffness play a crucial role in various biological processes (cell migration, attachment, cytoskeletal reorganization, cell differentiation, etc.). At this time, the cells sense the mechanical force and convert them into biochemical signals through various proteins and protein complexes. Thus, understanding the forces exerted by the cell plays a crucial role in understanding the various physiological processes. For example, changes in the force exerted by cells on the surface can be a sign of disease, and cancer cells have been reported to exhibit 20% to 50% greater force than normal cells.

In this regard, cells are known to exert two types of forces: traction and protrusive. That is, in order for the cells to move, they must be attached to the substrate and towed, where the pulling force is concentrated at the focal point between the cell and the substrate. Thus, the demand for a technique for measuring the behavior of microorganisms such as cells with high sensitivity and precision has been continuously increased, and a strain sensor is effectively applied for this purpose.

As an example of the application technique of such a strain sensor, a cell is placed and cultured on the upper side of a three-dimensional microstructure including a strain sensor and a plurality of pillars, and a microstructure distortion caused by a force or a pressure (See, for example, Korean Patent Publication No. 2015-0138993 filed by the present applicant, N. Klejwa et al ., Transparent SU-8 Three-Axis Micro Strain Gauge Force Sensing Pillar Arrays for Biological Applications, CONFERENCE PAPER, July 2007, etc.). However, the above-mentioned prior art document discloses a method of indirectly detecting the degree of deformation of a microstructure having a plurality of pillars disposed on the strain sensor due to the behavior of a cell placed on the microstructure. Therefore, there is a limitation in maximizing the accuracy or sensing sensitivity.

In addition, the above-mentioned prior art does not specifically mention the strain sensor. The silicone strain sensor known at the time of filing of the corresponding prior art document is typically a strain sensor of a horizontal type that is patterned on a silicon wafer through a lithography process to be.

In this connection, FIG. 1 shows an example of the conventional method (Kim et al., External 2, Fabrication and performance evaluation of strain gauge for high temperature using chromium silicide, Lecture and abstracts of the 2009 Fall Meeting of the Korean Society of Mechanical Engineers, 2009.11, 1165-1168) Based strain sensors based on the present invention.

According to the figure, the strain sensor provides a silicon wafer 1 (step 1) and deposits a silicon oxide film 2 thereon (step 2). Thereafter, the chromium silicide film 3 is deposited by sputtering (step 3), annealed at about 550 DEG C (step 4), and then patterned by, for example, RIE (Reactive Ion Etching) To form a patterned chromium silicide film 3 '(step 5). Then, a silicon oxide film 4 is deposited (Step 6) by, for example, PECVD (Plasma Enhanced Chemical Vapor Deposition) to form an insulating layer (Step 6) Thereby forming a patterned silicon oxide film 4 '(Step 7).

Thereafter, the photoresist is coated and patterned to form a photoresist layer 5 'in a region except for the contact hole region (step 8). Subsequently, a platinum layer 6 is deposited on the entire surface of the structure by depositing platinum Pt (step 9), and lift-off of the photoresist is performed so that platinum (Pt) Leaving the membrane 6 ' to make the final strain sensor.

The use of a horizontal strain sensor as described above makes it possible to make contact with the microstructure that is attached on the strain sensor, as is the case in the prior art.

Also, since the support column and the sensing plate having a predetermined height are formed on the substrate and the metal strain sensor attached to the lower side of the supporting column is deformed by the deformation of the supporting column as the supporting column is deformed by the external force applied to the sensing plate, Prior art techniques for sensing a change in resistance are also known (e.g., Korean Patent Nos. 1575678, 1550329, 1535552, 1502824, etc.).

The preceding documents also relate to a method in which a strain sensor indirectly senses an external force applied to a sensing plate through a support column and is distinguished from a method according to the present disclosure described later. It is expected that only a limited sensitivity improvement effect can be obtained.

In overcoming the limitations of the indirect sensing method described above, if the strain sensor structure itself is directly deformed with respect to external force and a direct sensing method of sensing the degree of deformation thereof can be implemented, a more precise and higher sensing sensitivity can be obtained. Thus, there is a need for a strain sensor of the direct sensing type.

Unlike an indirect sensing system in which a strain sensor is attached to a structure such as a column and detects a change in resistance due to deformation or movement of the structure, the structure of the strain sensor itself is physically deformed And a strain sensing system capable of detecting the degree of deformation and the degree of deformation by directly measuring the resistance change.

Further, in another embodiment according to the present disclosure, there is provided a method for detecting the behavior of a microorganism or a cell using the strain sensing system described above.

According to a first aspect of the present disclosure,

A plurality of strain sensor structures arranged on the substrate,

Here, the strain sensor structure includes:

A first electrode layer disposed on the substrate;

A second electrode layer located on the substrate and spatially separated from the first electrode layer;

At least one first rod and at least one conductive or semi-conducting rod that electrically contacts each of the first electrode layer and the second electrode layer and is deformable to induce a change in resistance; And

Wherein the at least one first rod and the at least one second rod are either supported by an upper surface of each of the at least one first rod and the at least one second rod or integrated with an upper surface of each of the at least one first rod and the at least one second rod, At least one first rod positioned underneath by pressure and a plate providing an acting surface of external force or pressure such that the at least one second rod deforms;

A strain sensing system is provided.

According to an exemplary embodiment, the first electrode layer and the second electrode layer may be made of gold.

According to an exemplary embodiment, the at least one first rod and the at least one second rod may be doped polysilicon materials.

According to an exemplary embodiment, there may be at least four strain sensor structures located on the substrate.

According to a second aspect of the present disclosure,

A method of manufacturing a strain sensing system comprising a plurality of strain sensor structures arranged on a substrate, wherein each of the plurality of strain sensor structures is manufactured by a method comprising the steps of:

a) forming a first insulating layer on a substrate surface;

b) forming a first electrode layer on a portion of the surface of the first insulating layer formed on the substrate;

c) forming a second insulating layer on a surface of the first electrode layer, wherein the first electrode layer is embedded in the first insulating layer;

d) forming a second electrode layer in a partial area on the second insulating layer while keeping a constant spacing without overlapping with the first electrode layer in plan view;

e) forming a third insulating layer on a surface of the second insulating layer in a region other than the second electrode layer;

f) forming a sacrificial layer on a surface including the second electrode layer and the third insulating layer;

g) forming at least one first hole and at least one second hole to reach the surface of the first electrode layer and the surface of the second electrode layer, respectively;

h) forming a layer of conductive or semiconductive material while filling said at least one first hole and said at least one second hole, wherein said at least one first hole and said at least one second hole Wherein the filled conductive or semiconductive material forms at least one first rod and at least one second rod;

i) etching the conductive or semiconductive material layer to obtain a structure in which a plate is formed on the at least one first rod and the at least one second rod; And

j) removing the sacrificial layer material remaining in the structure formed from step i) to expose a longitudinal portion of each of the at least one first rod and the at least one second rod.

According to a third aspect of the present disclosure,

A method of manufacturing a strain sensing system comprising a plurality of strain sensor structures arranged on a substrate, wherein each of the plurality of strain sensor structures is manufactured by a method comprising the steps of:

a ') forming a first insulating layer on a substrate surface;

b ') forming a first electrode layer on a part of the surface of the first insulating layer formed on the substrate;

c ') forming a second insulating layer on the surface on which the first electrode layer is formed, wherein the first electrode layer is embedded in the first insulating layer;

d ') forming a second electrode layer on a part of the second insulating layer while keeping a predetermined distance without overlapping with the first electrode layer in plan view;

e ') forming a third insulating layer on the surface of the second insulating layer in a region other than the second electrode layer;

f ') forming a sacrificial layer on the surface including the second electrode layer and the third insulating layer;

g ') forming at least one first hole and at least one second hole to reach the surface of the first electrode layer and the surface of the second electrode layer, respectively;

h ') forming a layer of non-conductive material while filling said at least one first hole and said at least one second hole, wherein said at least one first hole and said at least one second hole The filled non-conductive material forms at least one first rod and at least one second rod;

i ') etching the non-conductive material layer to obtain a structure in which a plate is formed on the at least one first rod and the at least one second rod;

j ') removing the sacrificial layer material remaining in the structure formed from step i') to expose a longitudinal portion of each of the at least one first rod and the at least one second rod; And

k ') imparting conductive or semiconductive properties to said at least one first rod and said at least one second rod, and said plate through ion implantation.

According to an exemplary embodiment, in the step i) or step i '), the surface of each of the first electrode layer and the second electrode layer may be etched.

According to a fourth aspect of the present disclosure,

A method for monitoring microbial and / or cell behavior using a strain sensing system,

The strain sensing system includes a plurality of strain sensor structures arranged on a substrate,

Here, the strain sensor structure includes:

A first electrode layer disposed on the substrate;

A second electrode layer located on the substrate and spatially separated from the first electrode layer;

At least one first rod and at least one conductive or semi-conducting rod that electrically contacts each of the first electrode layer and the second electrode layer and is deformable to induce a change in resistance; And

Wherein the at least one first rod and the at least one second rod are either supported by an upper surface of each of the at least one first rod and the at least one second rod or integrated with an upper surface of each of the at least one first rod and the at least one second rod, At least one first rod positioned underneath by pressure and a plate providing an acting surface of external force or pressure such that the at least one second rod deforms;

/ RTI >

Wherein the microorganism and / or cell is located on the plate so that force or pressure according to its behavior acts on the plate.

The strain sensing system provided in accordance with the embodiment of the present disclosure is capable of directly detecting the strain due to the structural deformation in the sensor and therefore the strain sensor itself is separately mounted on a specific portion of the structure A high sensing sensitivity which is difficult to attain by the conventional technique of indirectly sensing the deformation of the relevant region can be obtained. In particular, it can be applied to various application fields such as development of new drugs and treatment of diseases by precisely measuring fine strains caused by behaviors or movements caused by microorganisms and / or cell growth with high sensitivity . Therefore, it is expected to be widely used in the future.

1 is a view showing a series of processes for fabricating a horizontal strain sensor according to an example of the prior art;
2A is a cross-sectional view of one of a plurality of strain sensors that make up a strain sensing system in accordance with an exemplary embodiment of the present disclosure;
FIG. 2B is a perspective view schematically illustrating a connection structure of a plurality of strain sensor structures except an insulating layer in a strain sensing system according to an exemplary embodiment of the present disclosure; FIG.
Figure 3a is a top view showing a strain sensing system with an array of a plurality of strain sensor structures according to an exemplary embodiment of the present disclosure;
FIG. 3B is a diagram of a strain sensing system having an array of a plurality of strain sensor structures according to an exemplary embodiment of the present disclosure, illustrating a layout of a plate of a strain sensor structure and first and second rods supporting the same; Fig.
Figure 4 is a diagram illustrating a series of steps for fabricating a strain sensing system in accordance with an exemplary embodiment of the present disclosure;
5 is a diagram illustrating a series of steps for fabricating a strain sensing system according to another exemplary embodiment of the present disclosure; And
6 is a diagram schematically illustrating the principle of monitoring the behavior of cells using a strain sensing system in one embodiment of the present disclosure.

The present invention can be all accomplished by the following description. The following description should be understood to describe preferred embodiments of the present invention, but the present invention is not necessarily limited thereto. It is to be understood that the accompanying drawings are included to provide a further understanding of the invention and are not to be construed as limiting the present invention. The details of the individual components may be properly understood by reference to the following detailed description of the related description.

The terms used in this specification can be defined as follows.

The terms " on " and " on " can be understood to be used to refer to the relative position concept. Thus, there may be at least one other layer (interlayer or intervening layer) therebetween, or intervening or additional components may be present, as well as where other components or layers are directly present in the mentioned layer. Similarly, the expressions "under", "under" and "under" and "between" may also be understood as relative concepts of position. Also, the phrase " sequentially " can also be understood as a relative position concept.

The term " spatially separated " may be understood to include both cases where the two are separated on a two-dimensional plane and the case where they are separated on a three-dimensional space.

The term " in planar " may be interpreted to include the case of projecting a particular element or element on the same plane, for example, by two elements or members of different height from top to bottom (or from below The surface formed by projection can be used as a reference.

In the case of the term " contacting ", it should be understood that, although narrower means direct contact between two objects, it is broadly possible that any additional element may be interposed.

The term "microorganism" can include bacteria, fungi, protozoans, algae, and viruses as living organisms that are too small to be seen visually.

In this specification, where any element or member is referred to as being "connected" or "communicating" with another component or member, unless otherwise stated, the component or member is directly connected or in communication with the other component The present invention can be understood to include not only the case where the other component or member is interposed but also the case where it is connected or communicated under the interposition of another component or member.

Strain sensing system

2A is a cross-sectional view of one of a plurality of strain sensors that constitute a strain sensing system in accordance with an exemplary embodiment of the present disclosure, and FIG. 2B is a cross-sectional view of an isolation layer in a strain sensing system according to an exemplary embodiment of the present disclosure FIG. 3 is a perspective view schematically showing a connection structure of a plurality of strain sensor structures excluding the strain sensor structure. FIG.

According to the illustrated embodiment, the strain sensing system 100 is configured such that a plurality of strain sensor structures are arranged or aligned on an array 101 having regular or irregular intervals on a substrate 101.

Typical examples of the material constituting the substrate 101 include silicon (e.g., single crystal silicon), quartz (e.g., single crystal quartz, fused or amorphous quartz), glass, . ≪ / RTI >

Referring to FIG. 1, a pair of electrodes, that is, a first electrode layer 106 and a second electrode layer (not shown) are formed on a substrate 101, 107 are formed. Although the first electrode layer 106 and the second electrode layer 107 are formed at different heights in the illustrated embodiment, the present invention is not limited thereto and may be formed at the same height. Each of these pair of electrode layers 106 and 107 can be formed through patterning (e.g., patterning using a mask) process known in the art.

In an exemplary embodiment, each of the first electrode layer 106 and the second electrode layer 107 may be formed by a conductive layer formation process (e.g., physical vapor deposition (PVD), for example, evaporating ), Etc.), chemical vapor deposition (such as chemical vapor deposition (PECVD), thermal chemical vapor deposition (CVD), and the like) and / or patterning (such as photolithography) Pattern, shape, and / or dimension.

For example, gold (Au), silver (Ag), platinum (Pt), copper (Cu), and aluminum (Al) may be used as the material of the pair of electrode layers 106 and 107, (Au), silver (Ag), platinum (Pt) and / or copper (Cu), and more specifically, gold (Au), tungsten ) Material. However, the present invention is not limited to the above-illustrated kinds. The thickness of each of the first electrode layer 106 and the second electrode layer 107 is not particularly limited, but may be, for example, about 10 nm to about 2 탆, specifically about 100 nm to about 1 탆, And may range from 200 to 500 nm.

According to one embodiment, the first electrode layer 106 and the second electrode layer 107 are insulated from each other by an insulating layer 102. Examples of such an insulating layer (102), SiO _2, photoresist, polyimide, parylene (parylene; i.e., poly (p- xylylene) polymers), silicon nitride (Si ₃ N ₄₎ bars, and the like, alone Or may be used in combination (for example, an individual layer constituting the insulating layer may be used as a different material or may be used in the form of a mixture). The insulating layer 102 may be formed by a deposition process (particularly, PECVD capable of low temperature operation) known in the art in the case of SiO ₂ , Si ₃ N _4, etc., as described later, Spin coating, dip-coating, doctor-blade, spray coating or the like (more specifically, spin coating). According to a specific embodiment, the SiO ₂ material can be used as the insulating layer 102, and the SiO ₂ material is most commonly used in a semiconductor process, and has excellent insulating properties.

In the illustrated embodiment, an insulating layer 102 is also interposed between the substrate 101 and the first electrode layer 106. At this time, from the upper surface of the substrate 101 to the lower surface of the first electrode layer 106 (That is, the thickness of the insulating layer interposed between the substrate 101 and the first electrode layer 106) is, for example, about 50 to 2000 nm, specifically 100 to 1000 nm, more specifically about 300 to 1000 nm, 700 nm, although the present invention is not necessarily limited thereto.

On the other hand, when gold (Au) is used as the material of the pair of electrode layers 106 and 107, the adhesion to the surface of the insulating layer 102 located on the lower side may not be good despite good electrical characteristics. This is because the surface of the insulating layer 102 has low bonding due to low surface energy and the like. An intermediate layer is optionally provided between the insulating layer 102 and the electrode layers 106 and 107 for the purpose of alleviating the difficulty of adhering to the surface of the insulating layer 102 formed on the lower side in this specific example (For example, a two-layer structure of an electrode layer / an intermediate layer). As such an intermediate layer, a metal having good adhesiveness, such as titanium (Ti), vanadium (V), chromium (Cr), scandium (Sc), niobium (Nb), molybdenum (Mo) ), Chromium (Cr), etc. may be used alone or in combination.

Although the present invention is not limited to a specific theory, the metal for forming the above-described intermediate layer can form a chemical bond with polar atoms on the surface of the insulating layer 102, so that the electrode layers 106 and 107 and the lower insulating layer 102 It is considered that it is possible to induce a firm attachment between the electrodes. In the embodiments described above, the intermediate layer may also be deposited on the insulating layer 102 using known methods such as thermal vapor deposition, sputtering, E-beam deposition, and the like. The thickness thereof may range, for example, from about 1 to 500 nm, specifically about 5 to 300 nm, more specifically about 10 to 100 nm.

According to the exemplary embodiment, the step of forming the electrode layer (and the intermediate layer) may be performed at a chamber temperature of, for example, 50 DEG C, and for example, a laser may be specifically irradiated only to the target The glass transition temperature can be increased by heating, wherein the deposition thickness can be controlled according to the deposition time.

In one embodiment of the present disclosure, at least one first rod 103 and at least one second rod 104 that are in electrical contact with each of the first electrode layer 106 and the second electrode layer 107, . At this time, the first rod 103 and the second rod 104, which constitute the strain sensor, are deformed as an external force or pressure is applied, and as a result, have. As the pair of rods 103 and 104, a polysilicon-based material is typically used, and various materials (e.g., a polymer, a metal, a metal, and the like) may be used as long as they can satisfy the aforementioned physical and / Alloy, etc.) can be used. In addition, in the exemplary embodiment, each of the first rod 103 and the second rod may be formed in various shapes. As shown in the figure, not only the shape of the cylinder but also the shape of a cone, Lt; / RTI >

In one embodiment, it may be desirable that the first rod 103 and the second rod 104 have electrical characteristics that can induce a change in resistance in response to an external force or structural strain due to external pressure. According to an exemplary embodiment, the resistance of each of the first rod 103 and the second rod 104 is, for example, about 100 M? Or less, specifically about 1 M? Or less, more specifically about 5 k? Lt; / RTI > In order to realize such electrical characteristics, the first rod 103 and the second rod 104 may be required to have a conductive or semiconductive property. In order to impart the above-described electrical characteristics, when using polysilicon, a dopant may be mixed in the process of forming the first rod 103 and the second rod 104 for imparting conductivity. In an exemplary embodiment, at least one of antimony (Sb), arsenic (As), and phosphorus (P), which are Group V elements, can be used for n-type dopants, while in the case of p- At least one of boron (B), gallium (Ga), and indium (In), which are group elements, can be used. At this time, may be the concentration of the dopant is implanted, for example at about 5e19 / cm ³ to 5e21 at / cm ^3, particularly at about 1e10 / cm ³ to 9e20 at / cm ³ range.

According to an alternative embodiment, it is possible to form the first rod 103 and the second rod 104 without using a dopant, unlike the embodiments described above, and then in-situ when the final strain sensor structure is obtained, situ ion implantation method to impart conductivity or semiconducting property.

In one embodiment, the first rod 103 and the second rod 104 may be constructed of the same or different materials, and the dimensions such as the cross-sectional size may be the same or different. By way of example, the cross-sectional size (or diameter) of each of the first rod 103 and the second rod 104 may be, for example, from about 1 nm to 50 占 퐉, specifically about 10 nm to 10 占 퐉, May be selected within the range of 30 to 1000 nm, but the numerical range is illustrative and the present invention is not limited thereto.

The length of each of the first rod 103 and the second rod 104 may be determined within a range capable of detecting strain by changing resistance or the like with respect to an external force or an external pressure applied in the field to be applied have. By way of example, the length of the first rod 103 may range from about 10 nm to 760 μm (specifically about 50 nm to 300 μm, more specifically about 100 nm to 10 μm) May range from about 10 nm to 760 탆 (specifically about 50 nm to 300 탆, more specifically about 100 nm to 10 탆). In this regard, when the first electrode layer 104 is buried in the insulating layer 102, the length of the first rod 103 is larger than that of the second rod 104, as shown in FIG. According to a particular embodiment, the aspect ratio of each of the first rod 103 and the second rod 104 is, for example, from about 100: 1 to about 5: 1, specifically from about 50: 1 to about 10: 1, more specifically from about 40: 1 to about 15: 1.

According to one embodiment, a plate 105 of a predetermined size or shape is integrally formed on the upper surface of each of the first rod 103 and the second rod 104, And may have a shape that is supported thereby. The plate 105 may be the same as or different from the first rod and the second rod, and may incorporate a dopant in its formation process, for example, to impart conductivity. In an exemplary embodiment, at least one of antimony (Sb), arsenic (As), and phosphorus (P), which are Group V elements, can be used for n-type dopants, while in the case of p- At least one of boron (B), gallium (Ga), and indium (In), which are group elements, can be used. At this time, may be the concentration of the dopant is implanted, for example at about 5e19 / cm ³ to 5e21 at / cm ^3, particularly at about 1e10 / cm ³ to 9e20 at / cm ³ range. However, as described later, it may be advantageous to constitute the same material as the first rod and the second rod before forming the patterning process in the process of forming the strain sensor structure. Further, the plate 105 is not limited to a specific shape and dimensions as long as it can effectively transmit external force or external pressure to the first rod 103 and the second rod 104 on the lower side. For example, it may have various shapes including a rectangle, a circle, a triangle, a rhombus, and the like. In addition, the width (size or diameter) of the plate 105 may range, for example, from about 10 nm to 100 μm (specifically about 50 nm to about 50 μm, more specifically about 100 to 10000 nm), respectively.

Meanwhile, in the exemplary embodiment, the number of the first rod 103 and the second rod 104 respectively stably supports the plate 105 against external force or external pressure exerted on the plate 105, The first and second rods 103 and 104 may be arranged in a range capable of detecting an appropriate resistance change. For example, a plurality of the first rod 103 and the second rod 104 may be configured. Illustratively, each of the first rod 103 and the second rod 104 of a single strain sensor structure may include up to about eight, specifically up to about three, and more specifically up to about two.

In the illustrated embodiment, the number and arrangement (or alignment) of the individual strain sensor structures in the array of strain sensor structures formed on the substrate 101 is not particularly limited, but may be, for example, And / or to monitor the behavior of the cells, it may be advantageous to have a plurality, for example at least four, in particular. By way of example, the system can be configured with a strain sensor structure ranging from about 9,216 to 1,024 on a 10 mm x 10 mm substrate, specifically about 256, and more particularly, about 64 strain sensor structures arranged Or aligned).

3A and 3B each illustrate a strain sensing system having an array of a plurality of strain sensor structures according to an exemplary embodiment of the present disclosure, and a plate of a strain sensor structure and a first load supporting the strain sensor structure, Respectively.

For the embodiment illustrated in Figure 3a, a strain sensing system consisting of a combination of four strain sensor structures on a substrate of about 400 mu m x 400 mu m size is arranged in an array of 16 transverse and 16 transverse (i.e., 1,024 arrays). Referring to FIG. 3B, the first rod 103 and the second rod 104, each having a size of about 500 nm, can be positioned below the plate 105 having a hexagonal section of about 5 탆 in size, Each of the first rod 103 and the second rod 103 is deformed by an external force or an external pressure applied to each plate 105 of the strain sensor structure and the external force applied to the strain sensor structure Or strain due to pressure can be detected.

Manufacturing method of strain sensing system

In one embodiment of the present disclosure, a method of manufacturing the strain sensing system described above is provided. In this regard, FIG. 4 is a diagram illustrating a series of processes for fabricating a strain sensing system in accordance with an exemplary embodiment of the present disclosure. 5 is a diagram illustrating a series of steps for fabricating a strain sensing system in accordance with another exemplary embodiment of the present disclosure. The embodiment shown in Fig. 4 and the embodiment shown in Fig. 5 are similar to each other in the overall process order, but are distinguished in a manner of imparting conductive or semiconducting properties to the first rod and the second rod, respectively. Therefore, in the following description, in the case of the steps common to the two embodiments described above, the same description is repeated in order to avoid repetition.

First, in Step 1, as the substrate 201, for example, silicon (e.g., single crystal silicon), quartz (e.g., single crystal quartz, fused or amorphous quartz), glass, A substrate, specifically a wafer of silicon (specifically, a single crystal silicon) is provided, and an insulating layer 202 is formed on the surface or on the surface thereof (first insulating layer).

When SiO ₂ is formed as the first insulating layer 202, an SiO ₂ layer can be formed on the surface of the silicon wafer through, for example, oxidation (specifically, thermal oxidation). That is, the oxide thickness of a portion of SiO ₂ from a silicon wafer surface to which (for example, thermal oxidation) (that is, the SiO ₂ layer formed on a silicon (Si) wafer surface).

Alternatively, to form the SiO ₂ layer, for adhesion or deposition (deposition) method, for example, known in the art, PVD (e.g., sputtering, etc.), CVD (for example, LPCVD, SACVD, APCVD, etc.) , Or a PECVD process. In this case, SiH ₄ may be used as the base Si source, TEOS may be used as the base gas, and O ₂ may be used as the base gas.

[Formula 1]

In this connection, SiO ₂ formation can be formed by the following Reaction Schemes 1 and 2.

[Reaction Scheme 1]

SiH ₄ + O ₂ ? SiO ₂ + 2H ₂

[Reaction Scheme 2]

Si (OC ₂ H ₅ ) ₄ + 6O ₂ → SiO ₂ + 10 H ₂ O + 8 CO ₂ +

According to another embodiment, when a polymer material such as photoresist, polyimide, parylene or the like is used as the material of the first insulating layer 202, spin coating, dip-coating, doctor-blade, A spin coating method) may be used.

In this embodiment, the thickness of the first insulating layer 202 to be produced may be in the range of, for example, about 50 to 2000 nm, specifically 100 to 1000 nm, more specifically about 300 to 700 nm.

In the illustrated embodiment, a first electrode layer 203 (bottom electrode layer) is formed on the substrate region (e.g., the first insulating layer / substrate) in step 2, May be formed over a portion of the surface of the first insulating layer 202, and a patterning technique known in the art may be used as described above. Illustratively, the electrode layer can be formed only in a desired region by using a mask.

The material of the first electrode layer 203 may be selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), copper (Cu), aluminum (Al), tungsten For example, titanium (Ti), vanadium (V), chromium (Cr), scandium (Sc), or the like may be interposed between the first insulating layer 202 and the first electrode layer 203, Niobium (Nb), molybdenum (Mo), or a combination thereof. In a specific embodiment, the first electrode layer 203 may be a gold (Au) layer formed on a chromium (Cr) layer as an intermediate layer. The dimensions such as the forming method and the thickness of the first electrode layer 203 and the intermediate layer are as described above.

Meanwhile, in step 3, a second insulating layer 204 is formed on the surface of the first insulating layer 202 partially covered by the first electrode layer 203 for the insulation of the first electrode layer 203. The second insulating layer 204 may be formed of a SiO ₂ material. However, the second insulating layer 204 may be formed of a polymer material such as photoresist, polyimide or parylene.

In the illustrated embodiment, since the second electrode layer 204 is formed according to the geometrical shape of the lower surface, a portion where the first electrode layer 203 is formed on the lower side is protruded.

According to an exemplary embodiment, the second insulating layer 204 may be formed using a method known in the art such as PVD (e.g., sputtering), CVD (e.g., LPCVD, SACVD, APCVD, ), Or a PECVD process) or coating techniques (spin coating, dip-coating, doctor-blade, spray coating, etc.). However, when the deposition method is used, it can be advantageously formed by a PECVD process because a thin film can be formed at a relatively low temperature even when a polymer material is used instead of SiO ₂ material.

Illustratively, when SiO ₂ material is used as the insulating layer, when SiH ₄ and N ₂ O are introduced as a deposition precursor into the plasma, the Si and O radicals formed by the plasma form the main species, 3 to form SiO ₂ .

[Reaction Scheme 3]

Si (g) + 2O (g) SiO ₂ (s)

According to a particular embodiment, the thickness of the second insulating layer 204 may range, for example, from about 10 to 10000 nm, specifically about 50 to 1000 nm, more specifically about 150 to 500 nm. In addition, when a polymer material is used as the second insulating layer 204, the process may be performed at a low temperature. Illustratively, the second insulating layer 204 may be the same or different in material, dimensions and / or physical properties from the first insulating layer 202 described above.

As described above, the second insulating layer 204 is planarized by removing a portion of the second insulating layer 204 which is formed by a step difference and which forms a step in a subsequent step (a first planarization step) (Step 4). As a result, the first electrode layer 203 is in a state of being embedded in the planarized second insulation layer 204 '. This planarization step is performed to prevent so-called depth focus during the irradiation process in a subsequent lithography or masking process. Typically, it can be performed by a planarization method known in the art, for example, a chemical mechanical polishing (CMP) method, and thus a good planarized surface can be obtained.

In this connection, in the CMP process, a slurry containing abrasive of a size of several hundred nanometers is dispersed on the surface of the polishing pad while the surface of the object to be treated is normally in contact with a polishing pad made of polyurethane, It is known in the art to mechanically remove the modified surface by rotating the polishing platen at high speed while inducing a chemical reaction. Apparatus and conditions used in the CMP process are well known in the art, and conventional CMP conditions can be employed in the above embodiments.

After the first planarization step is completed, a second electrode layer 205 (upper electrode layer) is formed on the planarized second insulating layer 204 '(step 5). In detail, the second electrode layer 205 may be patterned to be formed over a part of the surface of the second insulating layer 204 ', similar to the first electrode layer 203, An electrode can be formed only in a desired region. The second electrode layer 205 may be the same as or different from the first electrode layer 203 in terms of material and size (particularly, thickness), but typically may have the same material and / or thickness.

However, since the first electrode layer 203 and the second electrode layer 205 must be in electrical contact with each of the pair of rods spaced from each other as described later, the second electrode layer 205 is formed in a planar manner, (For example, about 10 nm to about 50 mu m, specifically about < RTI ID = 0.0 > about < / RTI > about < RTI ID = 100 nm to about 10 탆, more specifically about 200 to 500 nm).

On the other hand, after the second electrode layer 205 is formed, a third insulating layer 206 is formed as an insulating layer on the surface of the second insulating layer 204 'partially covered with the second electrode layer 205 Step 6). When the third insulating layer 206 is made of SiO ₂ material, it may be formed by evaporation (specifically PVD (e.g., sputtering), CVD (e.g., LPCVD, SACVD, APCVD) (Spin coating, dip-coating, doctor-blade, spray coating, etc.) process. Alternatively, when a polymer material is used as the third insulating layer 206, it can be formed at a lower temperature than the SiO ₂ material. The thickness of the third insulating layer 206 may be in the range of, for example, about 10 to 10000 nm, specifically about 50 to 1000 nm, more specifically about 150 to 500 nm. Illustratively, the third insulating layer 206 may have the same material and / or the same dimensions and / or the same physical properties as the second insulating layer 204 described above.

Similarly to the second insulating layer 204, the insulating layer is formed on the surface of the second insulating layer 204 partially covered with the second electrode layer 205, so that the third insulating layer 206 are formed along the geometric shape of the lower surface and the portions where the second electrode layer 205 is formed on the lower side are stepped in a protruding form. Accordingly, the surface of the sensor layer positioned on the upper side is uniformized through the planarization technique (second planarization step) as described above (step 7). The second planarizing step may also be a polishing method that can be adopted in the first planarizing step, specifically, a CMP process. As a result, the second electrode layer 205 and the planarized third insulating layer 206 'exist at a uniform thickness (or height) on the upper surface of the planarized second insulating layer 204' (205) is exposed on the upper side.

A sacrificial layer 207 is then formed on the second electrode layer 205 and the planarized third insulating layer 206 'to form a later strain sensor structure (step 8). This sacrificial layer may be formed of, for example, an inorganic material, specifically, SiO ₂ (insulating material) so that it can be easily removed in a subsequent step.

According to alternative embodiments, the polymeric materials such as photoresist, polyimide, and parylene can also be used as the sacrificial layer material, but they can be distinguished in the removal method compared to the SiO ₂ material. The sacrificial layer 207 may also be formed by evaporation (specifically, PVD (e.g., sputtering), CVD (e.g., LPCVD, SACVD, APCVD, Coating, doctor-blade, spray coating, etc.). The thickness of the sacrificial layer 207 is a factor that directly affects the height of the rod to be formed later, for example, about 10 to 50,000 nm, specifically about 100 to 40,000 nm, more specifically about 5000 to 35,000 nm .

After the sacrifice layer 207 is formed, first and second holes or plug holes 208 and 209 are formed so as to expose one surface of the first electrode layer 203 and the second electrode layer 205 in the vertical direction 9). The above step corresponds to an anchor process for forming a strain sensor structure. For example, a hole may be formed by dry etching, wet etching, or the like. Each of the sizes (or diameters) of the holes 208 and 209 corresponds to the size (or diameter) of the first rod and the second rod described later. For example, the depth of the first hole 208 is about 10 while the depth of the second hole 209 may range from about 10 nm to 760 占 퐉 (specifically, about 50 nm to 760 占 퐉 (specifically about 50 nm to 300 占 퐉, and more particularly, about 100 nm to 10 占 퐉) nm to 300 m, more specifically about 100 nm to 10 m). In addition, the distance between the first hole 208 and the second hole 209 will correspond to the distance (or distance) between the first rod and the second rod to be formed later.

According to one embodiment, after step 9, a step of forming a strain sensor structure is performed while filling the first hole 208 and the second hole 209. [ According to a method of imparting conductivity or semiconducting property to the first rod (corresponding to the first hole 208) and the second rod (corresponding to the second hole 209) of the strain sensor structure, And specific examples shown in Fig. 6, respectively. Hereinafter, each of them will be described as "doping deposition method" and "ion implantation method".

(1) Doping deposition method

Referring to FIG. 4, the first and second holes 208 and 209 are filled with a dopant while vapor-depositing or attaching (applying) a semiconductor material, specifically, polysilicon, (Step 10a). The thickness of the framing layer 210 formed on the sacrificial layer 207 may be in the range of, for example, about 10 to 5,000 nm, specifically about 100 to 2,000 nm, more specifically about 300 to 1,000 nm .

According to an exemplary embodiment, the frame layer 210 of this strain sensor may be formed, for example, by deposition (CVD) and may be formed using a p-type dopant or an n-type dopant during the deposition process, The constituent layer 210 may be doped. Herein, a representative example of the p-type dopant is boron, while a typical example of the n-type dopant is phosphorus. Specifically, diborane (B ₂ H ₆ ) or phosphine (PH ₃ ) can be added (injected) into a silane (SiH ₄ ) or a TEOS gas as a dopant gas, The incorporation generally increases the deposition rate, while the incorporation of the phosphorous dopant may tend to reduce the deposition rate. The concentration of the dopant in the frame structure layer 210 may range, for example, from about 5 e 19 at / cm ³ to about 5 e 21 at / cm ³ , specifically from about 1 e 10 at / cm ³ to about 9 e 20 at / cm ³ .

The deposition process for forming the frame layer 210 may be performed under a temperature condition of, for example, about 50 to 900 占 폚, specifically about 450 to 800 占 폚, more specifically about 600 to 700 占 폚.

Thus, by incorporating the dopant during the deposition process, the frame structure layer 210 can exhibit conductivity or semiconductivity, and the resistance thereof is, for example, about 100 M or less, specifically about 1 M or less, And more specifically less than or equal to about 5 k [Omega]. After the frame structure layer 210 is formed, etching is performed until the surface of each of the first electrode layer 203 and the second electrode layer 205 reaches the surface of each of the first electrode layer 203 and the second electrode layer 205, (Step 11a). Therefore, in order to reach the first electrode layer 203 corresponding to the bottom electrode, the frame structure layer 210, the sacrificial layer 207, the planarized third insulating layer 206 ', and the second planarization layer 206' Etching can be performed up to the insulating layer 204 'to reach the second electrode layer 205 corresponding to the upper electrode while etching can be performed up to the frame layer 210 and the sacrifice layer 207 have. As a result, there remains a residual sacrificial layer in the space between the first rod 211 and the second rod 212, particularly in the space below the edge of the plate 210 '.

In an alternative embodiment, etching may be performed only to the frame layer 210 and the sacrifice layer 207, instead of etching to the first electrode layer 203 as necessary, so that the first rod 211 and the second rod 211 The exposed portions 212 may be exposed at the same height.

The etching process can be performed, for example, by a dry etching method. For example, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP- RIE), chemically assisted ion beam etching (CAIBE), or the like can be used.

As described above, after the etching step is performed, the remaining sacrificial layer region 207 'existing in the sensor structure can be removed (step 12a; release step) to increase the sensitivity of the strain sensor.

For etching, wet etching can typically be used. For example, when a SiO ₂ material is used as a sacrificial layer, diluted HF (HF aqueous solution; for example, about 5 to 100%, specifically about 40 to 60%) may be advantageously used. The reaction accompanying the etching process can be performed as shown in the following reaction formula (4).

[Reaction Scheme 4]

SiO ₂ + 6HF? H ₂ SiF ₆ + 2H ₂ O

In order to maintain the etching rate constant, a buffering agent such as ammonium fluoride may be added to maintain the concentration of HF in the entire process. According to an exemplary embodiment, glycerol may optionally be added to the HF / H ₂ O etchant and used as an etchant.

In this way, when the etching step is performed, only the sacrificial layer region 207 'remaining in the sensor structure can be selectively removed, and as a result, a desired strain sensor structure can be obtained.

(2) Ion implantation method

Referring to FIG. 6, a semiconductor material, specifically, polysilicon, is deposited on a surface of a substrate 210 of a strain sensor 210 to fill the holes 208 and 209 without doping the dopant, '' (Step 10b). At this time, the dimensions of the frame constituting layer 210 " are substantially the same as those of the preceding specific example.

In addition, the deposition process for the frame configuration layer (210 '') formed, is carried out by typically using a silane (SiH ₄₎ gas as a precursor source to, the temperature of the deposition process, for example, about 400 to 900 ℃, Specifically about 450 to 800 ° C, more specifically about 600 to 700 ° C.

When the formation of the frame structure layer 210 " is completed as described above, etching (in particular, dry etching) (step 11b) is performed in the same manner as in the previously described specific example and a sacrificial layer A removal step (step 12b; release step) of the region 207 'may be performed.

According to this embodiment, since the conductivity of the frame structure layer 210 " described above is low, ions can be implanted into the strain sensor structure to impart conductivity or semiconductivity (Step 13). That is, dopant ions are implanted into the framing layer 210 " by an ion beam. For ion implantation, the dopant element is ionized, accelerated with kinetic energy of several hundred keV, and then directed to the strain sensor structure. In this way, conductivity is increased in the first rod 211, the second rod 212, and the plate 213, and the charge carrier density may increase with the valence of the impurity to be implanted. In this connection, antimony, arsenic and phosphorus can be used as the n-type dopant in the dopant to be implanted, and boron can be used as the p-type dopant, for example. In the case of such an ion implantation method, it is possible to easily control the amount of dopant as the dopant, to easily reproduce the doping profile, and to lower the process temperature.

Meanwhile, in an exemplary ion implantation process, an ion implanter having an energy of, for example, about 1 keV to about 1.4 MeV, specifically about 5 to 20 keV, may be used. The velocity of ions perpendicular to the surface is determined by the projected range of the implanted ion distribution. If the ion implanted object is tilted at a large angle with respect to the ion beam, the effective ion energy is rapidly reduced can do. Thus, according to exemplary embodiments, for example, about 7 degrees and about 30 degrees may be used as the tilt angle.

The dopant distribution is predominantly determined by the mass of the ions and the ion energy injected. In an exemplary embodiment, the concentration of the dopant introduced into the sensor structure may range from about 5 e 19 at / cm ³ to about 5 e 21 at / cm ³ , Specifically from about 1 e 10 at / cm ³ to about 9 e 20 at / cm ³ .

Thus, the ion implanted strain sensor structure can exhibit conductivity or semiconductivity, the resistance of which is, for example, about 100 M? Or less, specifically about 1 M? Or less, more specifically about 5 k? Lt; / RTI >

According to one embodiment of the present disclosure, a plurality of strain sensor structures are formed on a substrate, and such strain sensing systems can be applied to various applications, such as deformation, load, pressure, vibration, displacement, .

Representative examples of the aforementioned applications may include monitoring microbial and / or cell growth or behavior. In this regard, FIG. 6 is a diagram schematically illustrating the principle of monitoring the behavior of cells using a strain sensing system, in one embodiment of the present disclosure.

According to the illustrated embodiment, the cells 301 are attached or supported on a plate of a plurality of strain sensor structures in the strain sensing system 300. Cells and MEMS techniques typically have similar scales, and cells can survive on artificial surfaces. When the cells 301 attached or supported in this way act in a direction opposite to each other due to a change in growth while undergoing growth or metabolism, the cells 301 attached to or supported by the strain sensor structure, particularly, The load and the second rod are deformed by the traction force and their electrical characteristics (for example, resistance value) are changed. At this time, the strain derived from the cell behavior can be obtained by monitoring and analyzing the change of the measured electrical characteristic value (or electrical signal), and it can provide information on the growth or behavior of the cell.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (23)

An array of a plurality of strain sensor structures arranged on a substrate,
Here, the strain sensor structure includes:
A first electrode layer disposed on the substrate;
A second electrode layer located on the substrate and spatially separated from the first electrode layer;
At least one first rod and at least one conductive or semi-conducting rod that electrically contacts each of the first electrode layer and the second electrode layer and is deformable to induce a change in resistance; And
Wherein the at least one first rod and the at least one second rod are either supported by an upper surface of each of the at least one first rod and the at least one second rod or integrated with an upper surface of each of the at least one first rod and the at least one second rod, At least one first rod positioned underneath by pressure and a plate providing an acting surface of external force or pressure such that the at least one second rod deforms;
/ RTI >
Wherein the at least one first rod and the at least one second rod each contain a dopant, wherein the concentration of the dopant ranges from 5e19 at / cm3 to 5e21 at / cm3. The strain sensing system of claim 1, wherein the substrate is a silicon substrate, a quartz substrate, a glass substrate, or a ceramic substrate. The method of claim 1, wherein the first electrode layer and the second electrode layer are formed of gold (Au), silver (Ag), platinum (Pt), copper (Cu), aluminum (Al), tungsten (W) Or alloy) material. The strain sensing system of claim 1, wherein the first electrode layer and the second electrode layer are insulated from each other by an insulating layer. The method of claim 4, wherein the insulating layer is SiO _2, photoresist, polyimide, parylene, and silicon nitride (Si ₃ N ₄₎ is selected from a material, strain sensing, characterized in that made in these materials, alone or in combination system. The strain sensing system according to claim 1, wherein an SiO ₂ layer is interposed between the substrate and the first electrode layer as an insulating layer, and the thickness of the interposed insulating layer is in a range of 50 to 5000 nm. 5. The semiconductor device according to claim 4, further comprising an intermediate layer interposed between the first electrode layer and the insulating layer, and between the second electrode layer and the insulating layer, wherein the intermediate layer is made of titanium (Ti), vanadium (V) Chromium (Cr), scandium (Sc), niobium (Nb), molybdenum (Mo), or combinations thereof. 8. The strain sensing system of claim 7, wherein the thickness of each of the first electrode layer and the second electrode layer ranges from 10 nm to 2 [mu] m. 2. The strain sensing system of claim 1, wherein the resistance of each of the at least one first rod and the at least one second rod is less than or equal to 100 MΩ. The strain sensing system of claim 1, wherein the cross-sectional size (diameter) of each of the at least one first rod and the at least one second rod ranges from 1 nm to 50 탆. 2. The method of claim 1 wherein the length of each of the at least one first rod and the at least one second rod is in the range of 10 nm to 760 탆 and the aspect ratio of each of the first rod and the second rod is 100: 5: 1. ≪ / RTI > The strain sensing system of claim 1, wherein the plate has a size and thickness ranging from 10 nm to 100 탆. 2. The strain sensing system of claim 1, wherein the at least one first rod and the at least one second rod are doped polysilicon materials. a) forming a first insulating layer on a substrate surface;
b) forming a first electrode layer on a portion of the surface of the first insulating layer formed on the substrate;
c) forming a second insulating layer on the surface of the first electrode layer and then planarizing the first insulating layer, wherein the first electrode layer is buried in the planarized second insulating layer;
d) forming a second electrode layer in a partial area on the second insulating layer while keeping a constant spacing without overlapping with the first electrode layer in plan view;
e) forming a third insulating layer on the surface of the second electrode layer, and then planarizing the third insulating layer, wherein the planarized third insulating layer is formed on the surface of the second insulating layer in a region other than the second electrode layer Formed;
f) forming a sacrificial layer on a surface including the second electrode layer and the third insulating layer;
g) forming at least one first hole and at least one second hole to reach the surface of the first electrode layer and the surface of the second electrode layer, respectively;
h) forming a layer of conductive or semiconductive material while filling said at least one first hole and said at least one second hole, wherein said at least one first hole and said at least one second hole Wherein the filled conductive or semiconductive material forms at least one first rod and at least one second rod;
i) etching the conductive or semiconductive material layer to obtain a structure in which a plate is formed on the at least one first rod and the at least one second rod; And
j) exposing a longitudinal portion of each of said at least one first rod and said at least one second rod by removing sacrificial layer material remaining in the structure formed from said step i);
And a plurality of strain sensor structures arranged on the substrate, wherein the plurality of strain sensor structures are arranged on the substrate. a ') forming a first insulating layer on a substrate surface;
b ') forming a first electrode layer on a part of the surface of the first insulating layer formed on the substrate;
c ') forming a second insulating layer on the surface on which the first electrode layer is formed, wherein the first electrode layer is embedded in the second insulating layer;
d ') forming a second electrode layer on a part of the second insulating layer while keeping a predetermined distance without overlapping with the first electrode layer in plan view;
e ') forming a third insulating layer on the surface of the second insulating layer in a region other than the second electrode layer;
f ') forming a sacrificial layer on the surface including the second electrode layer and the third insulating layer;
g ') forming at least one first hole and at least one second hole to reach the surface of the first electrode layer and the surface of the second electrode layer, respectively;
h ') forming a layer of non-conductive material while filling said at least one first hole and said at least one second hole, wherein said at least one first hole and said at least one second hole The filled non-conductive material forms at least one first rod and at least one second rod;
i ') etching the non-conductive material layer to obtain a structure in which a plate is formed on the at least one first rod and the at least one second rod;
j ') removing the sacrificial layer material remaining in the structure formed from step i') to expose a longitudinal portion of each of the at least one first rod and the at least one second rod; And
k ') applying the at least one first rod and the at least one second rod, and the plate to a conductive or semiconductive through ion implantation;
And a plurality of strain sensor structures arranged on the substrate, wherein the plurality of strain sensor structures are arranged on the substrate. 16. The method of claim 14 or 15, wherein the thickness of the first insulating layer is in the range of 100 to 1000 nm. 17. The method of claim 16 wherein the substrate and the first insulating layer are each made of silicone material, and SiO _2,
Wherein the first insulating layer is formed by (i) thermal oxidation of the silicon substrate or (ii) deposition of SiO ₂ . The method of claim 16 wherein the second insulating layer, and a method according to the third insulating at least one of the layers is characterized in that (i) SiO ₂ material, or (ii) a photoresist, polyimide, or a polymer material for the parylene. delete 16. The method of claim 15, further comprising: planarizing the second insulating layer after step c ') and planarizing the third insulating layer after step e'). The method according to claim 14 or 15, wherein the sacrificial layer is made of SiO ₂ and has a thickness of 10 to 50,000 nm. 15. The method of claim 14, wherein step (h) is performed by a doping deposition method,
The concentration of the dopant is 5e19 at / cm ³ to 5e21 at / cm ³ range, the deposition temperature is characterized in that in the range of 50 to 900 ℃. A method for monitoring the behavior of at least one of a microorganism and a cell using a strain sensing system,
The strain sensing system includes a plurality of strain sensor structures arranged on a substrate,
Here, the strain sensor structure includes:
A first electrode layer disposed on the substrate;
A second electrode layer located on the substrate and spatially separated from the first electrode layer;
At least one first rod and at least one second rod of conductive or semiconductive conductivity and electrically connected to each of the first electrode layer and the second electrode layer and deformable to induce a change in resistance, Wherein the first rod and the at least one second rod each contain a dopant wherein the concentration of the dopant ranges from 5e19 at / cm3 to 5e21 at / cm3; And
Wherein the at least one first rod and the at least one second rod are either supported by an upper surface of each of the at least one first rod and the at least one second rod or integrated with an upper surface of each of the at least one first rod and the at least one second rod, At least one first rod positioned underneath by pressure and a plate providing an acting surface of external force or pressure such that the at least one second rod deforms;
/ RTI >
Wherein at least one of said microorganisms and cells is located on a plate such that a force or pressure according to its behavior acts on said plate and said actuated force or pressure is applied to said at least one first rod and said at least one of said strain sensor structures And modifying one of the second loads to change its electrical characteristics and measuring and analyzing the altered electrical characteristics to monitor the behavior of at least one of the microbe and the cell.

Images