JP2007292618A - Deformation measuring device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a deformation measurement device for measuring the deformation from a variation in electric output capable of highly sensitively measuring minute deformation, further miniaturized so as to be able to detect a deformation in a small region. <P>SOLUTION: The deformation measurement device comprises an insulation substrate, at least a pair of electrode arranged on the insulation substrate, the channel for connecting the electrode pair. The channel is including two or more conductor bodies separated so as to carry the tunnel current. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to an apparatus for measuring the amount of deformation, and more particularly to an apparatus for measuring the amount of deformation based on the electrical output of a channel connecting electrodes arranged on a substrate.

  Conventionally, in order to measure strain and deformation amount, there have been proposed a method of measuring based on a change in resistance of a metal film in addition to using a primitive and direct method of measuring with a so-called ruler. A method based on electrical output, such as a change in resistance of a metal film, is a very convenient method because the signal processing is easy.

An example of an apparatus for measuring the amount of deformation based on a change in the resistance of the metal film is shown in FIG. The amount of deformation can be measured using an apparatus shown in FIG. 17 in which a metal film that connects a pair of electrodes is formed on one surface of a substrate having a certain thickness. That is, since the metal film expands and contracts with the deformation of the substrate, the amount of deformation can be measured by measuring the change in resistance of the metal film. This method of measuring the amount of deformation is a convenient method, but the resistance of the metal film changes in proportion to the amount of deformation, so the change in the resistance value with respect to the amount of deformation is small, and minute deformation (strain) is detected. That is generally difficult.
Furthermore, in order to accurately detect a change in resistance of the metal film, a metal film having a certain area or more is necessary. Therefore, as shown in FIG. 17, it is necessary to fold and arrange the metal film. Therefore, there is a limit to miniaturization of the apparatus.

There is known a pressure sensor that applies a device that measures the amount of deformation using a change in the resistance of the metal film described above. For example, a technique for measuring the internal pressure of a metal container using the device fixed to the metal container is known. (For example, refer to Patent Document 1).
JP-A-8-54304

  An object of the present invention is to provide an apparatus for measuring a deformation amount based on a change in electrical output, and capable of measuring a minute deformation amount with high sensitivity. A further object of the present invention is to provide a deformation measuring device that is miniaturized so that deformation in a small region can be detected.

  The present inventor has found that a minute amount of deformation can be measured by measuring the amount of deformation based on a change in tunnel current or tunnel resistance, and that the miniaturization of the measuring device can also be achieved. Was completed.

That is, the first of the present invention relates to a deformation amount measuring apparatus shown below.
[1] A deformation measuring device having an insulating substrate, at least one electrode pair arranged on the insulating substrate, and a channel connecting the electrode pair, the channel being separated so that a tunnel current flows A deformation amount measuring device including two or more conductors.
[2] The deformation measuring device according to [1], wherein the channel includes a dot array of conductors.
[3] The deformation amount measuring apparatus according to [1] or [2], wherein the channel further includes an insulator covering the conductor.
[4] The deformation measuring device according to any one of [1] to [3], wherein the channel further includes an insulator that disperses the conductor.
[5] The deformation amount measuring apparatus according to [1], wherein each of the electrode pairs and the channels has a plurality.
[6] The deformation amount measuring apparatus according to any one of [1] to [5], further including a weight attached to a part of the insulating substrate.
[7] The deformation amount measuring apparatus according to any one of [1] to [5], further including a plate-like object attached to a part of the insulating substrate.
[8] The deformation amount measuring apparatus according to any one of [1] to [5], further including a probe attached to a part of the insulating substrate.
[9] The deformation amount measuring apparatus according to any one of [1] to [5], further including an electrode that is electrostatically coupled to the channel disposed on the insulating substrate.

2nd of this invention is related with the manufacturing method of the deformation measuring apparatus shown below.
[10] An insulating substrate, at least one electrode pair disposed on the insulating substrate, and a channel connecting between the electrode pair, wherein the channel is separated by two or more conductive materials so that a tunnel current flows A method of manufacturing a deformation measuring device including a body,
A manufacturing method including the step of forming the channel by vapor-depositing or sputtering the conductor on the insulating substrate.
[11] An insulating substrate, at least one electrode pair disposed on the insulating substrate, and a channel connecting the electrode pair, wherein the channel is two or more conductive materials separated so that a tunnel current flows A deformation amount measuring device including a body and an insulator for dispersing the conductor,
A manufacturing method including the step of forming the channel on the insulating substrate by co-evaporating or co-sputtering the conductor and the insulator.

  According to the present invention, a high-sensitivity and downsized deformation amount measuring apparatus is provided. Therefore, a deformation amount measuring apparatus that can be attached to a small device such as a micromachine or a nanomachine is provided. If the deformation amount can be measured, the stress applied to the object to be measured, the acceleration and the flow velocity of the measurement object, and the like are measured. Therefore, an apparatus for measuring blood pressure, blood flow, and the like attached to a living body such as a human body can also be provided.

1. About the deformation amount measuring apparatus of the present invention The deformation amount measuring apparatus of the present invention has an insulating substrate, at least one electrode pair provided on the insulating substrate, and a channel connecting the electrode pair. Is characterized in that a tunnel current flows.

About Insulating Substrate The insulating substrate included in the deformation amount measuring apparatus of the present invention may be any substrate that has an insulating surface on which a channel is formed. That is, the insulating substrate may be a substrate made of an insulating material or a substrate in which a surface on which a channel is formed is covered with an insulating material.

  The deformation amount measuring device of the present invention is a device for obtaining the deformation amount by measuring the electrical response of the channel caused by the deformation of the insulating substrate. Therefore, it is preferable that the strength against deformation is appropriately adjusted by selecting the thickness and material of the insulating substrate in accordance with the magnitude of the stress applied to the insulating substrate and the manner in which the stress is applied to the insulating substrate. For example, if the material of the insulating substrate is an organic material such as a resin, it is easily deformed, so that a weak stress can be measured. On the other hand, if the material of the insulating substrate is a hard material such as silicon single crystal or ceramics, it is difficult to be deformed, so that a strong stress can be measured.

  Also, the insulating substrate included in the deformation measuring device of the present invention is a substrate in which an insulating film is formed on the surface (surface on which a channel is formed) of a support substrate made of a conductive material; or a support made of an insulator If the substrate is a substrate in which a conductive film is formed on the back surface (the surface where no channel is formed) of the substrate, a channel formed on the substrate by the support substrate or the conductive film made of a conductive material acting as a shield electrode Can be fixed. Therefore, it is possible to block the influence of the surrounding electromagnetic field on the channel.

About Electrode Pairs At least one electrode pair is disposed on the insulating substrate included in the deformation amount measuring apparatus of the present invention. The electrodes constituting the electrode pair may be arranged at arbitrary positions on the insulating substrate. For example, the insulating substrates may be disposed at positions facing each other (see FIG. 1), or may be disposed on the same side of the insulating substrates (see FIG. 8). In particular, it may be difficult to arrange the electrode pair at the opposite position because of the structure of the measuring apparatus. In that case, the electrode pair may be arranged on the same side of the insulating substrate as shown in FIG. When the electrode pairs are arranged on the same side of the insulating substrate, the channel connecting the electrode pairs needs to be folded halfway, and thus is preferably constituted by a dot array. This folded portion (portion facing substantially the vertical direction (vertical direction in FIG. 8) with respect to the direction in which the channel comprising the dot array extends long (horizontal direction in FIG. 8)) can be kept small. preferable. This is because if the portion is long, the tunnel current may be changed not only by the horizontal deformation in FIG. 8 but also by the vertical deformation.

In addition, the form measuring device of the present invention only needs to include at least one electrode pair, and an electrode may be additionally disposed (see FIG. 9). For example, two or more positive electrodes may be arranged for one negative electrode, or two or more negative electrodes and positive electrodes may be arranged. By additionally arranging the electrodes, it is possible to determine the amount of deformation in any direction by selecting which electrode the tunnel current or tunnel resistance of the channel between is measured.
For example, as shown in FIG. 9, the vertical and horizontal deformations of the insulating substrate can be achieved by arranging electrodes on the left and right and upper and lower sides of the insulating substrate on which channels comprising a two-dimensionally expanded dot array are arranged. The amount can be evaluated.

Channel The channel included in the deformation amount measuring apparatus of the present invention is not particularly limited as long as it connects an electrode pair disposed on an insulating substrate and allows a tunnel current to flow. For example, the channel may be formed of two or more conductors separated by a distance that allows a tunnel current to flow (see FIG. 15). The material of the conductor is any metal, and can be gold or iron. A distance between two or more conductors becomes a tunnel barrier, and a tunnel current flows. When deformation occurs at the position of the tunnel barrier, the current value of the tunnel current changes, and the amount of deformation can be measured.
Although the distance between the two or more conductors varies depending on the material of the conductor and the substance existing between the conductors, a tunnel current can be made to flow if it is usually in the order of nanometers.

  As shown in FIG. 15, each of the two conductors may be a film metal, but each may be a nanodot. If each of the two conductors is a nanodot, the channel distance (distance between the electrodes) can be reduced to about 10 nm, so that the deformation measuring device itself can be very miniaturized.

  The channel may include one or more dots (may be nanodots) made of a conductor. For example, as shown in FIG. 14, a structure in which one nanodot is arranged between electrodes can be considered (in FIG. 14, the dot in contact with the electrode may be considered as a part of the electrode).

  The channel may include a dot (nanodot) array (see FIG. 1). A dot array means a structure in which two or more dots made of a conductor (for example, metal) are arranged. The size (diameter) of each dot constituting the dot array may be a nanometer size, but is not particularly limited. Further, the interval between the dots constituting the dot array only needs to be an interval at which a tunnel phenomenon can occur. The interval can be appropriately selected according to the size and material of each dot, the substance existing between the dots, and the like. For example, when an insulating solid material is present between dots, the energy height of the tunnel barrier is generally lower than when the space between the dots is in a vacuum or gas (air, etc.) atmosphere. The interval can be increased. Further, the interval between the dots may be adjusted by appropriately selecting an insulating material existing between the dots. Further, the interval between the dots may be uniform, but it is not necessarily uniform if a tunnel current flows between the electrodes.

  Two or more conductors included in the channel (for example, dots made of a conductor) may be arranged in contact with the insulating substrate, but are dispersed in a film made of an insulating material arranged on the insulating substrate. (See FIG. 7). A film made of an insulating material containing a dispersed conductor may be referred to as a granular film. By adjusting the amounts of the conductor and the insulating material contained in the granular film, an appropriate tunnel current can be passed. An example of the insulating material includes magnesium oxide, and an example of the conductor includes iron.

  The upper part of the channel formed on the insulating substrate may be covered with a film made of a conductive material (see FIG. 5). This film made of a conductive material can act as a shield electrode to fix the channel potential. Therefore, the channel can be prevented from being affected by the surrounding electromagnetic field in the measurement environment.

In the deformation measuring device of the present invention, the electrode pair and the channel may be formed only on one surface of the insulating substrate, or the electrode pair and the channel may be formed on each of two or more surfaces. For example, as shown in FIG. 6, when an electrode pair and a channel are formed on both surfaces of the insulating substrate, one end of the channel on one surface is connected to the voltage output electrode and the other end is connected to the voltage electrode. And one end of the channel on the other side can be connected to the voltage output electrode and the other end can be connected to the ground electrode. At this time, if the channels are formed in substantially the same manner, ½ of the voltage applied to the voltage electrode is output to the voltage output electrode in an undeformed state, and when the deformation occurs, the resistance of each channel (R _A And R _B ) change, and the applied voltage R _A / (R _A + R _B ) is output to the voltage output electrode. Therefore, it becomes easy to measure the deformation amount by the voltage.

  The insulating substrate of the deformation amount measuring apparatus of the present invention is deformed when subjected to stress, thereby changing the distance between conductors (for example, dots made of a conductor) included in a channel disposed on the insulating substrate. That is, if the surface of the substrate on which the channel is formed is deformed to be concave, the distance is shortened, and if the surface is deformed to be convex, the distance is long (see FIG. 2). When the distance between the conductors becomes shorter, the tunnel current increases, and when the distance becomes longer, the tunnel current decreases. The tunnel current generally changes exponentially with respect to the distance between the conductors, and the tunnel resistance also changes exponentially. Accordingly, the tunnel current is exaggerated in FIG. 2 (b) with the degree of deformation of the insulating substrate exaggerated. However, the degree of deformation of the insulating substrate is small and changes greatly even if the distance between the conductors is small. To do.

  Therefore, if a constant voltage is applied between the electrode pairs using the deformation amount measuring apparatus of the present invention, a slight deformation amount can be measured by measuring the tunnel current or tunnel resistance flowing through the channel. Of course, the amount of deformation can also be measured by connecting a constant current source and measuring the voltage of the current.

The deformation amount measuring apparatus of the present invention can appropriately change the range of measurable deformation amount or the stress range (dynamic range) that causes deformation, and has abundant means.
First, by changing the thickness of the insulating substrate or the material of the insulating substrate, the ease of deformation can be appropriately changed over a wide range. For example, since an insulating substrate made of an organic material such as a resin is easily deformed, the amount of deformation due to weak stress can be measured, while an insulating substrate made of a hard material such as a silicon single crystal or ceramic is not easily deformed and is strong. The amount of deformation due to stress can be measured.
Next, the measurable deformation range can be changed by adjusting the distance between the conductors included in the channel. For example, if the distance between the conductors (for example, the distance between dots) is excessively increased, a tunnel current flows when the surface on which the channel is formed is greatly deformed to be concave, so that a large amount of deformation can be measured. . On the other hand, if the distance between the conductors is made excessively short, a tunnel current flows when the surface on which the channel is formed is greatly deformed in a convex manner, so that a large deformation amount can be measured in the same manner.

  The deformation amount measuring apparatus of the present invention can measure the deformation amount of the insulating substrate to which stress is applied, but the stress may be applied to the insulating substrate in any way. For example, as shown in FIG. 3, one end of the insulating substrate may be fixed to the support and stress may be applied to the other end.

  When the deformation amount is measured by the deformation amount measuring apparatus of the present invention, it is preferable to evaluate the correspondence relationship between the deformation amount and the tunnel current or the tunnel resistance in advance. For example, as shown in FIG. 4, the correspondence can be evaluated by measuring a change in current while measuring a deformation amount with a height (position) detector.

The deformation amount measuring apparatus of the present invention can measure the deformation amount and the magnitude of the stress that causes the deformation, but can also measure other physical quantities.
For example, as shown in FIG. 10, if a weight having a weight larger than the weight of the insulating substrate is attached to a part of the insulating substrate of the deformation measuring device of the present invention, preferably at the end of the insulating substrate, the acceleration is increased. Can be measured. That is, when acceleration is applied in the vertical direction with respect to an insulating substrate having a weight attached to its end, the weight is stationary (when it is stationary in the initial state) or constant velocity motion (initial state) according to the law of inertia. In this case, the substrate warps in the direction opposite to the acceleration direction, causing deformation. The acceleration can be obtained by measuring the deformation amount at this time based on the tunnel current flowing through the channel or the tunnel resistance of the channel.

  Further, as shown in FIG. 11, if a plate-like object (for example, wing, Fin) is attached to a part of the insulating substrate of the deformation measuring device of the present invention, preferably at the end of the insulating substrate, the flow velocity of the fluid is measured. can do. That is, when the wing attached to the insulating substrate is inserted into the fluid (for example, inserted with the plate surface perpendicular to the flow), the insulating substrate is deformed due to the viscosity of the fluid. By measuring the amount of deformation at this time based on the amount of current flowing through the channel or the tunnel resistance of the channel, the flow velocity of the fluid can be obtained.

Furthermore, the surface shape of a substance can also be evaluated using the deformation amount measuring apparatus of the present invention.
As shown in FIG. 12, by attaching a thin needle as a probe to a part of the insulating substrate, preferably at the end of the insulating substrate, the uneven shape of the material surface can be traced using this needle as a palpation. When the probe approaches the material surface, the insulating substrate is deformed by the repulsive force from the material surface, so if the probe is moved close to the material surface and moved horizontally, the insulating substrate is deformed according to the uneven shape of the material surface. . At this time, by measuring changes in the tunnel current flowing in the channel formed on the insulating substrate and the tunnel resistance of the channel, the surface shape can be evaluated. For example, a two-dimensional map of the surface shape is created. Here, an electrical response such as a tunnel current is converted into a length.

A piezo driver may be attached to the apparatus shown in FIG. 12 (see FIG. 13). A voltage for raising and lowering the probe is applied to the piezo driver so that the tunnel current flowing through the channel or the tunnel resistance of the channel is constant. That is, the tunnel current flowing through the channel and the tunnel resistance of the channel are fed back to the piezo driver, and the piezo driver is driven to move the probe up and down to keep the tunnel current and tunnel resistance constant. By measuring the amount of deformation of the insulating substrate by the piezo driver, the three-dimensional surface shape can be evaluated.
This evaluation method is similar to a method used in a surface shape measuring instrument called a scanning probe microscope (SPM) such as an atomic force microscope. However, in an atomic force microscope or the like, the reflected light of a laser beam irradiated on a support portion of a needle that is a probe (in the example of FIG. 13, means a tip portion of a substrate to which the needle is attached) is measured. In contrast to obtaining the position and feeding it back to the piezo driver, according to the apparatus shown in FIG. 13, it is only necessary to feed back the current flowing through the channel to the piezo driver, so that the laser beam can be emitted. No external optical system is required. Therefore, the entire apparatus can be made extremely compact.

  Since the apparatus shown in FIG. 13 is compact, a plurality of such apparatuses can be arranged in an array. In particular, if a process technology used for manufacturing an integrated circuit is used, a plurality of the devices can be easily arranged. If a plurality of such devices are arranged, the shape of the surface of a wide range of substances can be simultaneously evaluated using a plurality of needles, so that the evaluation time can be shortened and various applications are possible.

  For example, patterning can be performed using the apparatus shown in FIG. It is known that when a conductive needle is brought into contact with the surface of a semiconductor or metal and a current is passed, moisture aggregates between the needle and the surface of the substance, and this moisture causes electric field-assisted oxidation. If the conditions are adjusted by narrowing the tip of the oxide layer, an oxide layer pattern having a width of 10 nm can be formed. The formation of this oxide layer pattern is usually performed using an atomic force microscope technique, but as described above, the atomic force microscope technique drives the needle with a piezo driver, so the operating range is narrow, In addition, there is a problem that pattern formation is slow. On the other hand, since the apparatus shown in FIG. 13 is compact, it is possible to arrange a plurality of needles in an array using a plurality of such apparatuses, and thus it is possible to form a pattern simultaneously using a plurality of needles. it can. Therefore, the range in which pattern formation is possible can be expanded, and the pattern formation speed can be improved.

Of course, since each needle can be driven independently, the positional relationship (distance between the surface and the needle) between the surface of the material on which the pattern is formed and each needle can be adjusted appropriately.
In addition, if a step shape to be a mark is formed on the surface of the material on which the pattern is formed, the pattern position can be controlled based on the mark by detecting the mark. The step shape to be a mark can be formed by conventional electron beam exposure and etching.

  Furthermore, the surface shape may be changed to form a pattern by pressing the needle of the apparatus shown in FIG. 13 against the surface of a relatively soft substance such as a resist.

  The apparatus shown in FIG. 13 measures the degree of deformation of a microstructure or detects the position of deformation as manufactured using MEMS (microelectromechanical system) or NEMS (nanoelectromechanical system). Can also be applied.

Although the channel of the deformation measuring device of the present invention can include nanodots, the smaller the dot, the smaller the electrostatic capacity of the dot, so that the charging energy when electrons tunnel is increased. That is, assuming that the charge of one electron is e and the capacity of one dot is C, the increase ΔE in charging energy when one electron tunnels is ΔE = e ² / 2C. If the charging energy is equal to or smaller than the thermal energy of the atmosphere, the increase in charging energy is ignored and a tunnel current flows. On the other hand, if the charging energy is sufficiently larger than the thermal energy, electron tunneling may be suppressed. This tunnel suppression is called Coulomb blockade.
Coulomb blockade phenomenon occurs when spherical dots are placed at room temperature in the presence of vacuum or air (relative permittivity is about 1), and the dot diameter is about 30 nm or less. When placed in the presence of silicon oxide (having a relative dielectric constant of about 4), the dot diameter may be about 8 nm or less.

The generation of Coulomb blockade can be suppressed by increasing the voltage applied to the channel comprising the dot array.
In addition, the generation of coulomb blockade can be suppressed by further disposing an electrode electrostatically coupled to the channel formed of the dot array (see FIG. 16). The electrode may be arranged so that no significant tunnel current flows between the electrode and the channel, and is referred to as a gate electrode. This structure is a structure called a single-electron transistor, but it can be adjusted whether or not coulomb blockade is generated by adjusting the voltage applied to the gate electrode. Further, by adjusting the voltage of the gate electrode, the range of the deformation amount that can be measured by the channel can be adjusted.

2. About the manufacturing method of the deformation measuring device of this invention The deformation measuring device of this invention can be manufactured by arbitrary methods. The manufacturing method may include a step of forming the channel by depositing a conductor (metal, for example, gold) on the insulating substrate in a vacuum or by sputtering. The channel formed in this way can be a dot array film. The size of the dots by the conductor and the distance between the dots can be changed as appropriate by adjusting the deposition amount or the sputtering amount, or adjusting the temperature of the insulating substrate on which the channel is formed.

  In addition, if an electrode pair is attached to an insulating substrate in advance, a channel having desired characteristics can be reproduced with good reproducibility by depositing or sputtering a conductor while monitoring the current flowing between the electrodes or the resistance between the electrodes. Can be produced.

  An insulating film may be deposited or sputtered on a channel formed by depositing or sputtering a conductor on an insulating substrate. The channel formed in this way can be a channel in which the surface of the dots in the dot array and the space between the dots are filled with an insulator.

The manufacturing method of the deformation amount measuring apparatus of the present invention may include a step of forming a channel of an insulating substrate by depositing an insulating material and a conductor at the same time or by sputtering at the same time. The channel formed in this way can be a granular film in which dots made of a conductor are dispersed in a film made of an insulator. The tunnel current (tunnel resistance) flowing through the channel can be adjusted by adjusting the ratio of the deposited amount of the insulating material and the conductor deposited simultaneously. An example of the insulating material includes magnesium oxide, and an example of the conductor includes iron.
The channel made of the granular film can also be formed by accelerating ions containing a conductor with an electric field or the like into an insulating film formed on an insulating substrate and so-called ion implantation.

  Furthermore, as described above, if an electrode pair is attached to the insulating substrate in advance, while monitoring the current flowing between the electrodes and the resistance between the electrodes, by simultaneously depositing or sputtering the insulating substance and the conductor, A channel having desired characteristics can be manufactured with high reproducibility.

  Since the deformation amount measuring device of the present invention measures the deformation amount based on the tunnel current or the tunnel resistance, even a slight deformation can be measured with high sensitivity, and the device itself can be miniaturized. Therefore, for example, a deformation measuring device that can be attached to a small device such as a micromachine or a nanomachine can be provided, and a device that can be attached to a living body such as a human body to measure blood pressure or blood flow can be provided. .

It is the schematic of the deformation measuring device of this invention which has the channel which consists of a dot array. (A) is a top view, (b) is a sectional view. (A) is a schematic view of the deformation amount measuring apparatus of the present invention at the time of non-deformation, and (b) at the time of deformation. It is a figure which shows the deformation measuring device of this invention of the state which added the stress and deform | transformed. It is a figure explaining the method of evaluating the correspondence of the magnitude | size of the applied stress, and deformation amount in the deformation amount measuring apparatus of this invention. It is the schematic of the deformation measuring device of this invention provided with the shield electrode. (A) is a top view (the shield electrode is not shown), and (b) is a cross-sectional view. It is the schematic of the deformation measuring device of this invention in which the channel which consists of dot arrays is formed in both surfaces of the insulated substrate. (A) is sectional drawing, (b) is an equivalent circuit schematic. It is the schematic of the deformation measuring device of this invention which has the channel which consists of an insulating thin film (granular film | membrane) containing the dot of the conductor disperse | distributed. It is the schematic of the deformation measuring device of this invention by which the electrode pair is arrange | positioned at the same side of the insulated substrate. (A) is a top view, (b) is a sectional view. It is the schematic of the deformation measuring device of this invention in which many electrodes are arrange | positioned at the insulated substrate. It is the schematic of the deformation measuring apparatus of this invention with which the weight was attached to the edge part of an insulated substrate. It can be used to measure acceleration. It is the schematic of the deformation measuring apparatus of this invention with which the wing | blade was attached to the edge part of an insulated substrate. Can be used to measure fluid velocity. It is the schematic of the deformation measuring device of this invention with which the probe was attached to the edge part of an insulated substrate. It can be used to evaluate the surface shape of a substance. It is the schematic of the deformation measuring device of this invention which combined the piezoelectric drive body with the apparatus of FIG. The state which evaluates a surface shape is shown. It is the schematic of the deformation measuring device of this invention which has the channel containing a dot. (A) is a top view, (b) is a sectional view. It is the schematic of the deformation measuring apparatus of this invention which has the channel which consists of 2 conductors (metal film). (A) is a top view, (b) is a sectional view. It is the schematic of the deformation measuring device of this invention which has the electrode (gate electrode) electrostatically couple | bonded with the channel containing a dot. It is the schematic of the conventional deformation measuring device. The amount of deformation is measured based on the resistance of the metal thin film.

Explanation of symbols

1 Electrode 2 Conductor Dot 3 Insulating Substrate 4 Insulating Thin Film 5 Stress 6 Support 7 Height (Position) Detector 8 Shield Electrode 9 Ground Electrode 10 Voltage Electrode 11 Voltage Output Electrode 12 Weight 13 Wings (Fin)
14 Probe 15 Measured object 16 Piezo driver 17 Metal film 18 Electrode 19 electrostatically coupled to channel 19 Metal thin film

Claims (11)

A deformation measuring device having an insulating substrate, at least one electrode pair disposed on the insulating substrate, and a channel connecting the electrode pair,
The deformation measurement apparatus, wherein the channel includes two or more conductors separated so that a tunnel current flows.   The deformation amount measuring apparatus according to claim 1, wherein the channel includes a dot array of a conductor.   The deformation amount measuring apparatus according to claim 1, wherein the channel further includes an insulator covering the conductor.   The deformation measurement device according to claim 1, wherein the channel further includes an insulator that disperses the conductor.   The deformation amount measuring apparatus according to claim 1, comprising a plurality of electrode pairs and channels.   The deformation measuring device according to claim 1, further comprising a weight attached to a part of the insulating substrate.   The deformation measuring device according to any one of claims 1 to 5, further comprising a plate-like object attached to a part of the insulating substrate.   The deformation amount measuring apparatus according to claim 1, further comprising a probe attached to a part of the insulating substrate.   The deformation amount measuring apparatus according to any one of claims 1 to 5, further comprising an electrode electrostatically coupled to the channel disposed on the substrate. An insulating substrate, at least one electrode pair disposed on the insulating substrate, and a channel connecting the electrode pair, the channel including two or more conductors separated so that a tunnel current flows A method of manufacturing a deformation measuring device,
A manufacturing method including the step of forming the channel by vapor-depositing or sputtering the conductor on the insulating substrate. An insulating substrate, at least one electrode pair disposed on the insulating substrate, and a channel connecting between the electrode pair, wherein the channel includes two or more conductors separated so that a tunnel current flows; and A manufacturing method of a deformation amount measuring device including an insulator for dispersing the conductor,
A manufacturing method including the step of forming the channel on the insulating substrate by co-evaporating or co-sputtering the conductor and the insulator.

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