KR101883111B1 - Laminated ceramic electronic parts - Google Patents

Abstract

The present invention relates to a multilayer ceramic electronic component, which comprises a ceramic body including a dielectric layer having an average thickness of 0.6 μm or less; And first and second internal electrodes formed in the ceramic body, wherein the dielectric layer is composed of a contact dielectric grain in contact with the first or second internal electrode and a non-contact dielectric grain not in contact, And when the average thickness of the dielectric layer is defined as td and the average diameter of the contact dielectric grain is defined as De, De / td? 0.35.
According to the present invention, it is possible to realize a large-capacity multilayer ceramic electronic part having excellent reliability and an extended life span by improving the connectivity of the internal electrode layer while realizing a large capacitance of the capacitance.

Description

[0001] Laminated ceramic electronic parts [0002]

The present invention relates to a large-capacity multilayer ceramic electronic component having excellent reliability.

2. Description of the Related Art In recent years, with the trend toward miniaturization of electronic products, multilayer ceramic electronic components are also required to be miniaturized and increased in capacity.

Accordingly, various attempts have been made to reduce the thickness and thickness of the dielectric and internal electrodes, and multilayer ceramic electronic components in which the thickness of the dielectric layer is thinned and the number of layers are increased have been produced in recent years.

In order to realize such a large capacity, the thickness of the internal electrode layer becomes uneven as the thickness of the dielectric layer and the thickness of the internal electrode layer become thinner, and the electrode layer is continuously connected while the thickness is maintained.

Also, as the electrode is broken, the average thickness of the dielectric layer is the same, but a portion where the dielectric layer is thickened or thinned is generated, thereby deteriorating the insulation characteristic at the portion where the dielectric layer is thinned.

On the other hand, there is a problem that the fine ceramic powder contained in the internal electrode paste escapes into the dielectric layer during the firing process, causing abnormal grain growth of the dielectric grain in contact with the internal electrode layer, thereby decreasing the reliability of the multilayer ceramic electronic component.

The present invention provides a large-capacity multilayer ceramic electronic component having excellent reliability.

An embodiment of the present invention is a ceramic body including a dielectric layer having an average thickness of 0.6 占 퐉 or less; And first and second internal electrodes formed in the ceramic body, wherein the dielectric layer is composed of a contact dielectric grain in contact with the first or second internal electrode and a non-contact dielectric grain not in contact, And when the average thickness of the dielectric layer is defined as td and the average diameter of the contact dielectric grain is defined as De, De / td? 0.35.

When the average particle diameter of the noncontact dielectric grain is defined as Dc, Dc / td? 0.25 can be further satisfied.

When the average particle size of the ceramic powder added to the internal electrode is defined as Di and the average particle size of the ceramic powder used as the dielectric is defined as Dd, 0.1 <Di / Dd <1 can be satisfied.

The composition of the ceramic powder added to the internal electrode and the ceramic powder used as the dielectric may be the same.

In addition, the connectivity of the first or second internal electrode may be 80% or more.

Another embodiment of the present invention is a ceramic body comprising a dielectric layer having an average thickness of 0.6 占 퐉 or less; And first and second internal electrodes formed in the ceramic body and having a connectivity of 80% or more, wherein the dielectric layer includes a contact dielectric grain in contact with the first or second internal electrode, Wherein the dielectric layer is made of a dielectric grain and De / td? 0.35 is satisfied when the average thickness of the dielectric layer is defined as td and the average diameter of the contact dielectric grain is defined as De.

Another embodiment of the present invention is a ceramic body comprising a plurality of dielectric layers laminated with an average thickness of 0.6 占 퐉 or less; And a plurality of first and second inner electrodes formed in the ceramic body, wherein the dielectric layer is composed of a contact dielectric grain in contact with the first or second inner electrode and a non-contact dielectric grain not in contact therewith Wherein De / td? 0.35 is satisfied when the average thickness of the dielectric layer is defined as td and the average particle diameter of the contact dielectric grain is defined as De.

Another embodiment of the present invention is a ceramic body comprising a plurality of dielectric layers laminated with an average thickness of 0.6 占 퐉 or less; And a plurality of first and second internal electrodes formed in the ceramic body and having a connectivity of 80% or more, wherein the dielectric layer includes a contact dielectric grain in contact with the first or second internal electrode, Contact dielectric grain, and when the average thickness of the dielectric layer is defined as td and the average particle diameter of the contact dielectric grain is defined as De, De / td? 0.35 is provided.

According to the present invention, it is possible to realize a large-capacity multilayer ceramic electronic component having an improved life span and high reliability by improving the connectivity of the internal electrode layers and adjusting the average grain size of the dielectric grains while realizing a large capacitance.

1 is a perspective view schematically showing a multilayer ceramic capacitor according to an embodiment of the present invention.
2 is a cross-sectional view taken along line BB 'of FIG. 1 and an enlarged view showing the connectivity of the internal electrode layers.
3 is a cross-sectional view taken along line BB 'of FIG. 1 and an enlarged view showing a contact dielectric grain and a non-contact dielectric grain.

The embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a perspective view schematically showing a multilayer ceramic capacitor according to an embodiment of the present invention.

2 is a cross-sectional view taken along the line B-B 'in Fig. 1 and an enlarged view showing the connectivity of the internal electrode layers.

FIG. 3 is a cross-sectional view taken along line B-B 'of FIG. 1 and an enlarged view showing contact dielectric grains and non-contact dielectric grains.

1 to 3, a multilayer ceramic electronic device according to an embodiment of the present invention includes a ceramic body 10 including a dielectric layer 1 having an average thickness of 0.6 占 퐉 or less; And first and second internal electrodes (21, 22) formed in the ceramic body (10), wherein the dielectric layer (1) comprises a contact dielectric Contact dielectric grain, and De / td? 0.35 when the average thickness of the dielectric layer 1 is defined as td and the average particle diameter of the contact dielectric grain is defined as De .

Meanwhile, a multilayer ceramic electronic device according to another embodiment of the present invention includes a ceramic body 10 including a dielectric layer 1 having an average thickness of 0.6 占 퐉 or less; And first and second internal electrodes 21 and 22 formed in the ceramic body 10 and having a connectivity of 80% or more. The dielectric layer 1 is formed on the first or second internal electrodes 21, Contact dielectric grains contacting the dielectric layer 1 and contactless dielectric grains contacting the dielectric layer 1. When the average thickness of the dielectric layer 1 is defined as td and the average diameter of the contact dielectric grains as De, td &amp;le; 0.35.

A multilayer ceramic capacitor according to an embodiment of the present invention includes a ceramic body 10 including a dielectric layer 1 having an average thickness of 0.6 占 퐉 or less; And first and second internal electrodes (21, 22) formed in the ceramic body (10).

The first and second inner electrodes 21 and 22 are not particularly limited and may be made of a material selected from the group consisting of noble metal such as palladium (Pd), palladium-silver (Pd-Ag) alloy, ). &Lt; / RTI &gt;

An external electrode 3 may be formed on the outside of the ceramic body 10 and may be electrically connected to the first and second internal electrodes 21 and 22 in order to form a capacitance.

The external electrode 3 may be formed of a conductive material having the same material as the internal electrode, but is not limited thereto. For example, the external electrode 3 may be formed of copper (Cu), silver (Ag), nickel (Ni) .

The external electrode 3 may be formed by applying a conductive paste prepared by adding a glass frit to the metal powder and then firing the paste.

According to one embodiment of the present invention, the average thickness of the dielectric layer 1 may be 0.6 m or less.

In one embodiment of the present invention, the thickness of the dielectric layer 1 may mean the average thickness of the dielectric layer 1 disposed between the internal electrode layers 21 and 22.

The average thickness of the dielectric layer 1 can be measured by scanning an image of the ceramic body 10 in the longitudinal direction of the ceramic body 10 with a scanning electron microscope (SEM), as shown in FIG.

For example, as shown in FIG. 2, the length and the cross-section in the thickness direction LT cut at the central portion in the width W direction of the ceramic body 10 are extracted from an image obtained by scanning with a scanning electron microscope (SEM) It is possible to measure the average value of an arbitrary dielectric layer by measuring the thickness at 30 points at even intervals in the longitudinal direction.

The 30 equally spaced points may be measured at a capacitance forming part, which means a region where the first and second internal electrodes 21 and 22 overlap.

Further, when the average value is measured by extending the average value measurement to at least 10 dielectric layers, the average thickness of the dielectric layer can be further generalized.

The thickness after firing of the internal electrode layers 21 and 22 is not particularly limited as long as it can form a capacitance, and may be, for example, 1 μm or less.

2, a multilayer ceramic electronic device according to an embodiment of the present invention includes a ceramic body 10 including a dielectric layer 1 having an average thickness of 0.6 占 퐉 or less; And first and second internal electrodes (21, 22) formed in the ceramic body (10) and having a connectivity of 80% or more.

The interconnectivity of the internal electrodes may be defined as the length of a portion of the first or second internal electrode 21 or 22 where the actual electrode is formed.

For example, the connectivity of the internal electrodes can be measured by scanning an image of the lengthwise section of the laminate body 10 with a scanning electron microscope (SEM), as shown in FIG.

2, the length and the cross-section in the thickness direction (LT) cut at the central portion in the width W direction of the laminate body 10 are arbitrarily selected from an image scanned by a scanning electron microscope (SEM) Can be obtained by measuring the total length of the portion where the actual internal electrode is formed, with respect to the total length of the internal electrode cross-section.

The measurement of the connectivity of the internal electrode layers can be performed in a capacitance forming portion, which means a region where the first and second internal electrodes 21 and 22 overlap.

Further, the connectivity of the internal electrode layer can be further generalized by measuring the connectivity of the internal electrode layer by extending the length of the internal electrode layer to at least 10 internal electrode layers at the center of the length and the thickness direction (L-T) section.

2, when the total electrode length measured at one point of the first or second internal electrodes 21 and 22 is A and the length of the portion where the actual electrode is formed is c1, c2, c3, · Cn, the connectivity of the internal electrode can be expressed as (c1 + c2 + c3 + · + cn) / A.

In FIG. 2, the portions where the actual electrodes are formed are represented by c1, c2, c3, and c4, but the number of portions where the electrodes are actually formed is not particularly limited.

Also, this means the application ratio of the internal electrode, which can also be defined as the ratio of the area of the internal electrode to the total area of the internal electrode at any one point.

The connectivity (c1 + c2 + c3 + c4 / A) of the internal electrode layers 21 and 22 can be variously implemented in accordance with the methods described later. In the multilayer ceramic electronic component according to the embodiment of the present invention, (C1 + c2 + c3 + c4 / A) of the connection terminals 21 and 22 is 80% or more.

The portion 4 where the internal electrode layers 21 and 22 are broken may be pores or ceramics.

As a method for realizing the connectivity (c1 + c2 + c3 + c4 / A) of the internal electrode layers 21 and 22 by 80% or more, the particle size of the metal powder is changed or added in the conductive paste forming the internal electrodes And a method of controlling the amount of organic matter and ceramics.

In addition, it is possible to control the electrode connection property by controlling the heating rate and the firing atmosphere in the firing process.

According to one embodiment of the present invention, in order to realize the connectivity of the internal electrode layer, a method of controlling the size and amount of the ceramic particles to be added to the conductive paste forming the internal electrode may be used.

Specifically, the ceramic added to the conductive paste is not particularly limited and may be a barium titanate (BaTiO ₃ ) powder, for example, as a material similar to the ceramic used in the dielectric layer.

The average grain size Di of the ceramic grains is a typical size and is not particularly limited. However, according to an embodiment of the present invention described below, the average grain size of the contact dielectric grains in contact with the internal electrode layers 21, Can be determined.

According to one embodiment of the present invention, the interconnectivity (c1 + c2 + c3 + c4 / A) of the internal electrode layers 21 and 22 is 80% or more, thereby manufacturing a high-capacity multilayer ceramic capacitor with increased capacitance and excellent reliability Is possible.

Referring to FIG. 3, in the multilayer ceramic electronic component according to one embodiment of the present invention, the average thickness td of the dielectric layer 1 after baking may be 0.6 占 퐉 or less.

The dielectric layer 1 is composed of a contact dielectric grain which is in contact with the first or second internal electrode layers 21 and 22 and a noncontact dielectric grain which is not in contact with the dielectric layer 1, Is defined as De, De / td? 0.35 can be satisfied.

In one embodiment, the average particle diameter (De) of the contact dielectric grain can be measured by analyzing a cross-sectional photograph of a dielectric layer extracted by a scanning electron microscope (SEM). For example, the average grain size of the dielectric layer can be measured using grain size measurement software that supports the average grain size standard measurement method specified by the American Society for Testing and Materials (ASTM) E112

The adjustment of the average particle size (De) of the contact dielectric grains can be controlled by controlling the average particle size of the ceramic powder used for forming the dielectric layer 1 and the average particle size of the ceramic powder added to the conductive paste forming the internal electrode layers 21 and 22 . &Lt; / RTI &gt;

The average particle diameter of the ceramic powder used for forming the dielectric layer 1 is not particularly limited and may be adjusted to achieve the object of the present invention, but may be adjusted to, for example, 300 nm or less.

When the ratio (De / td) of the average particle diameter (De) of the contact dielectric grain to the average thickness of the dielectric layer (1) having a thickness of 0.6 탆 or less is 0.35 or less, a high-capacity multilayer ceramic capacitor having excellent reliability can be realized .

When the ratio (De / td) of the average particle diameter of the contact dielectric grain and the average thickness of the dielectric layer is more than 0.35, the average particle diameter of the contact dielectric grain is large and the reliability is lowered when a thin dielectric layer is applied to the multilayer ceramic electronic component .

Further, when the average particle diameter of the non-contact dielectric grain is defined as Dc, Dc / td? 0.25 can be further satisfied.

The average particle diameter (Dc) of the noncontact dielectric grains can be measured by analyzing the cross-sectional photograph of the dielectric layer extracted by the scanning electron microscope (SEM) shown in Fig. 3 by cutting in the dielectric lamination direction. For example, the average grain size of the dielectric layer can be measured using grain size measurement software that supports the average grain size standard measurement method specified by the American Society for Testing and Materials (ASTM) E112.

Specifically, when the ratio (Dc / td) of the average particle diameter (Dc) of the noncontact dielectric grain to the thickness of the dielectric layer (1) having a thickness of 0.6 m or less is 0.25 or less, a high-capacity multilayer ceramic capacitor Can be implemented.

The average particle diameter (Dc) of the noncontact dielectric grain can be adjusted for the purpose of the present invention by adjusting the average particle diameter of the ceramic powder used for forming the dielectric layer (1).

Even when the ratio (Dc / td) of the average particle diameter of the noncontact dielectric grains to the average thickness of the dielectric layer is more than 0.25, the average particle diameter of the noncontact dielectric grains is increased. Therefore, the reliability of the multilayer ceramic electronic component according to one embodiment of the present invention Can be lowered.

According to one embodiment of the present invention, the raw material forming the dielectric layer 1 is not particularly limited as long as sufficient electrostatic capacity can be obtained, for example, it may be a barium titanate (BaTiO ₃ ) powder.

A variety of ceramic additives, organic solvents, plasticizers, binders, dispersants and the like may be added to the powder of the barium titanate (BaTiO ₃ ) according to the purpose of the present invention.

According to an embodiment of the present invention, the average thickness td of the dielectric layer 1 is 0.6 占 퐉 or less and the connectivity (c1 + c2 + c3 + c4 cn / c2) of the first or second internal electrode layers 21, (D / td) of the average diameter of the contact dielectric grains and the thickness of the dielectric layer (1) is not more than 0.35, and the average particle diameter of the non-contact dielectric grains and the dielectric layer (1) (Dc / td) of 0.25 or less, a high-capacity multilayer ceramic capacitor having excellent reliability can be realized.

On the other hand, when the average particle size of the ceramic powder added to the internal electrode is defined as Di and the average particle size of the ceramic powder used as the dielectric is defined as Dd, 0.1 <Di / Dd <1 can be satisfied.

If Di / Dd is less than 0.1, the difference between the average particle diameter of the ceramic powder added to the internal electrode and the average particle diameter of the ceramic powder used as the dielectric is too large to effectively suppress sintering shrinkage of the internal electrode, There is a problem in formation of electrostatic capacitance due to deterioration in the connectivity, and there is a problem that as the electrode at the end of the electrode cut-off portion becomes thick, the distance between the electrode layers becomes short and the reliability such as lowering the dielectric breakdown voltage is lowered.

When Di / Dd is more than 1, since the average particle diameter of the ceramic powder added to the internal electrode is larger than the average particle diameter of the ceramic powder used as the dielectric, the sintering shrinkage of the internal electrode can not be effectively suppressed, Layer to excessively thicken the dielectric layer, which may cause problems in capacity formation and reliability.

A high-capacity multilayer ceramic electronic component having improved reliability can be realized by satisfying 0.1 < Di / Dd < 1 between an average particle diameter of the ceramic powder added to the internal electrode and an average particle diameter of the ceramic powder used as the dielectric.

The composition of the ceramic powder to be used as a dielectric and the ceramic powder to be added to the internal electrode is not particularly limited, but the reliability may be further improved if they are the same.

Meanwhile, a multilayer ceramic electronic device according to another embodiment of the present invention includes a ceramic body 10 in which a plurality of dielectric layers 1 having an average thickness of 0.6 m or less are laminated; And a plurality of first and second internal electrodes 21 and 22 formed in the ceramic body 10. The dielectric layer 1 is in contact with the first or second internal electrodes 21 and 22 Contact dielectric grain, and when the average thickness of the dielectric layer 1 is denoted by td and the average diameter of the contact dielectric grain is denoted by De, De / td? 0.35 is satisfied .

Further, a multilayer ceramic electronic device according to another embodiment of the present invention includes a ceramic body 10 in which a plurality of dielectric layers 1 having an average thickness of 0.6 占 퐉 or less are laminated; And a plurality of first and second internal electrodes (21, 22) formed in the ceramic body (10) and having a connectivity of 80% or more, wherein the dielectric layer (1) Contact dielectric grains contacting the dielectric layer 1 and the contactless dielectric grains contacting the dielectric layer 1 and the contact dielectric grains 21. When the average thickness of the dielectric layer 1 is defined as td and the average diameter of the contact dielectric grains is defined as De, De / td? 0.35.

The multilayer ceramic electronic component according to the above embodiment is the same as the multilayer ceramic electronic component according to the above embodiment except that a plurality of dielectric layers and a first and a second internal electrode layers are stacked, Omit it.

Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited thereto.

In this embodiment, for the multilayer ceramic capacitor to which the dielectric layer 1 having an average thickness of 0.6 占 퐉 or less is applied, the connectivity of the internal electrode layers 21 and 22 and the contact dielectric grain and the dielectric constant of the internal electrode layers 21 and 22 depend on the charging rate of barium titanate It was conducted to test whether the reliability of non-contact dielectric grains was improved according to various average particle diameters.

The multilayer ceramic capacitor according to this embodiment was fabricated by the following steps.

First, a slurry containing a powder such as barium titanate (BaTiO ₃ ) is coated on a carrier film and dried to provide a plurality of ceramic green sheets having a thickness of 1.05 μm and 0.95 μm, (1).

Next, the average particle size of the barium titanate powder to be added to the internal electrode was adjusted so that the average size of the nickel particles was 0.05 to 0.2 占 퐉 and the ratio of 0.1 <Di / Dd <1 was satisfied, and the amount of the barium titanate powder 5 to 10%, and a conductive paste for internal electrode was prepared.

The internal electrode conductive paste was applied on the green sheet by a screen printing method to form internal electrodes, and then 200 to 250 layers were laminated to form a laminate.

Thereafter, chips of size 0603 were produced by compression and cutting, and the chips were fired at a temperature of 1050 to 1200 ° C in a reducing atmosphere of 0.1% or less of H ₂ .

 Next, a multilayer ceramic capacitor was manufactured through an external electrode, a plating process, and the like.

As a result of observing the cross section of the multilayer ceramic capacitor, the average thickness of the internal electrode was about 0.4 to 0.9 μm, and the average thickness of the dielectric layer was about 0.5 to 0.5 μm. 0.8 μm.

The connectivity of the internal electrodes was measured at the capacitance formed portion of 10 internal electrodes at the central portion of the cross section in the thickness direction LT and the length cut at the central portion in the width W direction of the laminated body 10 . For the measurement of the connectivity of the internal electrodes, the total length of the portion where the actual internal electrodes were formed was measured from the image scanned by a scanning electron microscope (SEM) with respect to the ten internal electrode layers.

Table 1 below shows the comparison of the high temperature accelerated lifetime according to the insertion rate of the barium titanate (BaTiO ₃ ) powder injected into the internal electrode, the internal electrode connectivity, the thickness of the dielectric layer, the average diameter of the contact dielectric grains and the non- to be.

Sample
No.
Dielectric powder
Average particle diameter (D _d ) (nm) dielectric
그린 시트
Average thickness
(μm) Inner electrode
Paste in the paste size (D _i )
(nm) Inner electrode
BaTiO3 content in paste (%) Inner electrode
Connectivity
(B / A) Dielectric layer thickness
t _d
(μm) Contact dielectric
Grain average particle diameter
D _e
(μm) Noncontact dielectric
Grain average particle diameter
D _c
(μm)


D _e / t _d


D _c / t _d

High temperature accelerated life
NG rate One 100 1.05 20 15.0 0.94 0.62 0.230 0.142 0.37 0.23 0/200 2 120 1.05 20 7.5 0.80 0.61 0.210 0.165 0.34 0.27 0/200 * 3 100 1.05 10 7.5 0.65 0.60 0.225 0.138 0.38 0.23 4/200 *4 120 1.05 50 7.5 0.81 0.59 0.205 0.155 0.35 0.26 1/200 * 5 100 1.05 20 5.0 0.78 0.58 0.163 0.142 0.28 0.24 2/200 * 6 100 0.95 20 15.0 0.95 0.57 0.228 0.139 0.40 0.24 2/200 * 7 100 0.95 50 5.0 0.72 0.53 0.160 0.132 0.30 0.25 3/200 *8 100 0.95 20 5.0 0.77 0.52 0.158 0.130 0.30 0.25 3/200

Referring to Table 1, Samples 1 and 2 show the case where the average thickness of the dielectric layers exceeds 0.6 μm and the ratio (De / td) of the average particle diameter of the contact dielectric grain and the average thickness of the dielectric layer 1 and Even when the ratio (Dc / td) of the average particle diameter of the noncontact dielectric grains to the average thickness of the dielectric layer 1 deviates from the numerical range of the present invention, good results are obtained in the high temperature accelerated life test.

On the other hand, in Samples 3 to 8, the average thickness of the dielectric layers was 0.6 m or less, and the ratio of the internal electrode connectivity, the average particle diameter of the contact dielectric grains to the average thickness of the dielectric layer 1 (De / td) It can be seen that when the ratio (Dc / td) of the particle diameter to the average thickness of the dielectric layer 1 deviates from the numerical range of the present invention, problems may arise in the high temperature accelerated lifetime and reliability test.

Therefore, according to the following description, it can be seen that the multilayer ceramic electronic device according to one embodiment of the present invention is effective for improving the high-temperature accelerated lifetime and reliability when the average thickness td of the dielectric layer 1 after baking is 0.6 탆 or less have.

Table 2 below shows the relationship between the internal electrode connectivity and the average particle diameter of the contact dielectric grains and the non-contact dielectric grains with respect to the charging rate of the barium titanate (BaTiO ₃ ) powder injected into the internal electrode when the average thickness td of the dielectric layer is 0.6 μm or less Temperature accelerated lifetime according to the present invention.

Sample
No.
Dielectric powder
Average particle diameter (D _d ) (nm) dielectric
그린 시트
Average thickness
(μm) Inner electrode
Paste in the paste size (D _i )
(nm) Inner electrode
BaTiO3 content in paste (%) Inner electrode
Connectivity
(B / A) Dielectric layer thickness
t _d
(μm) Contact dielectric
Grain average particle diameter
D _e
(μm) Noncontact dielectric
Grain average particle diameter
D _c
(μm)


D _e / t _d


D _c / t _d

High temperature accelerated life
NG rate * 9 100 1.05 10 10.0 0.70 0.59 0.235 0.142 0.40 0.24 3/200 * 10 100 1.05 10 7.5 0.65 0.60 0.225 0.138 0.38 0.23 4/200 * 11 100 1.05 20 15.0 0.94 0.62 0.230 0.142 0.37 0.23 1/200 12 100 1.05 20 10.0 0.92 0.60 0.195 0.138 0.33 0.23 0/200 13 100 1.05 20 7.5 0.82 0.60 0.175 0.140 0.29 0.23 0/200 * 14 100 1.05 20 5.0 0.78 0.58 0.163 0.142 0.28 0.24 2/200 * 15 120 1.05 20 7.5 0.80 0.61 0.210 0.165 0.34 0.27 1/200 16 100 1.05 50 10.0 0.87 0.58 0.200 0.142 0.34 0.24 0/200 17 100 1.05 50 7.5 0.81 0.58 0.183 0.140 0.32 0.24 0/200 * 18 100 1.05 50 5.0 0.74 0.56 0.178 0.139 0.32 0.25 1/200 * 19 120 1.05 50 7.5 0.81 0.59 0.205 0.155 0.35 0.26 1/200 * 20 100 0.95 20 15.0 0.95 0.57 0.228 0.139 0.40 0.24 2/200 21 100 0.95 20 10.0 0.92 0.55 0.193 0.138 0.35 0.25 0/200 22 100 0.95 20 7.5 0.84 0.54 0.180 0.136 0.33 0.25 0/200 * 23 100 0.95 20 5.0 0.77 0.52 0.158 0.130 0.30 0.25 3/200 * 24 120 0.95 20 7.5 0.81 0.53 0.205 0.160 0.39 0.30 2/200 * 25 100 0.95 50 15.0 0.93 0.58 0.208 0.138 0.36 0.24 2/200 26 100 0.95 50 10.0 0.84 0.56 0.191 0.140 0.34 0.25 0/200 27 100 0.95 50 7.5 0.80 0.56 0.170 0.141 0.30 0.25 0/200 * 28 100 0.95 50 5.0 0.72 0.53 0.160 0.132 0.30 0.25 3/200 * 29 120 0.95 50 7.5 0.81 0.58 0.200 0.163 0.34 0.28 4/200

As can be seen from the above Table 2, the higher the connectivity (B / A) of the internal electrode layers is, the higher the acceleration life and the reliability are improved.

When the ratio (B / A) of the internal electrode layers is 0.8 or more and the ratio (De / td) of the average particle diameter of the contact dielectric grains to the thickness of the dielectric layer 1 is 0.35 or less, the acceleration life is increased and the reliability It can be seen that it is improved.

Further, the ratio (De / td) of the average particle diameter of the contact dielectric grains to the thickness of the dielectric layer 1 is not more than 0.35, the connectivity (B / A) of the internal electrode layers is not less than 0.8, The results of the acceleration life increase and the reliability improvement can be found when the ratio (Dc / td) of the particle diameter to the thickness of the dielectric layer 1 is 0.25 or less.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims. It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

1: dielectric layer 21, 22: first and second internal electrode layers
3: external electrode 4: pore or ceramic
A: The total length (or total area)
c1 + c2 + c3 + c4: the total length (or coated area) of the cross section in which the internal electrode layer is actually formed,
td: average thickness of dielectric layer
De: average grain size of the contact dielectric grain
Dc: average particle diameter of noncontact dielectric grain

Claims (18)

A ceramic body including a dielectric layer having an average thickness of 0.6 占 퐉 or less; And
And first and second internal electrodes disposed in the ceramic body so as to face each other with the dielectric layer interposed therebetween,
Wherein the dielectric layer is composed of contact dielectric grains which are in contact with the first or second inner electrodes and noncontact dielectric grains which are not in contact with each other and the average thickness of the dielectric layer is td and the average particle diameter of the non- When specified, Dc / td < 0.25 is satisfied,
Wherein when the average particle size of the ceramic powder added to the internal electrode is defined as Di and the average particle size of the ceramic powder used as the dielectric is defined as Dd, 0.1 <Di / Dd <1.
The method according to claim 1,
And De / td? 0.35 when the average particle diameter of the contact dielectric grain is defined as De.
delete The method according to claim 1,
Wherein a ceramic powder added to the internal electrode and a ceramic powder used as the dielectric are the same in composition.
The method according to claim 1,
And the connection of the first or second internal electrode is 80% or more.
A ceramic body including a dielectric layer having an average thickness of 0.6 占 퐉 or less; And
And first and second internal electrodes formed in the ceramic body and having a connectivity of 80% or more,
Wherein the dielectric layer is composed of contact dielectric grains which are in contact with the first or second inner electrodes and noncontact dielectric grains which are not in contact with each other and the average thickness of the dielectric layer is td and the average particle diameter of the non- When specified, Dc / td < 0.25 is satisfied,
Wherein when the average particle size of the ceramic powder added to the internal electrode is defined as Di and the average particle size of the ceramic powder used as the dielectric is defined as Dd, 0.1 <Di / Dd <1.
The method according to claim 6,
And De / td? 0.35 when the average particle diameter of the contact dielectric grain is defined as De.
delete The method according to claim 6,
Wherein a ceramic powder added to the internal electrode and a ceramic powder used as the dielectric are the same in composition.
A ceramic body in which a plurality of dielectric layers having an average thickness of 0.6 占 퐉 or less are laminated; And
And a plurality of first and second internal electrodes formed in the ceramic body,
Wherein the dielectric layer is composed of contact dielectric grains which are in contact with the first or second inner electrodes and noncontact dielectric grains which are not in contact with each other and the average thickness of the dielectric layer is td and the average particle diameter of the non- When specified, Dc / td < 0.25 is satisfied,
Wherein when the average particle size of the ceramic powder added to the internal electrode is defined as Di and the average particle size of the ceramic powder used as the dielectric is defined as Dd, 0.1 <Di / Dd <1.
11. The method of claim 10,
And De / td? 0.35 when the average particle diameter of the contact dielectric grain is defined as De.
delete 11. The method of claim 10,
Wherein a ceramic powder added to the internal electrode and a ceramic powder used as the dielectric are the same in composition.
11. The method of claim 10,
And the connection of the first or second internal electrode is 80% or more.
A ceramic body in which a plurality of dielectric layers having an average thickness of 0.6 占 퐉 or less are laminated; And
And a plurality of first and second internal electrodes formed in the ceramic body and having a connectivity of 80% or more,
Wherein the dielectric layer is composed of a contact dielectric grain which is in contact with the first or second internal electrode layer and a noncontact dielectric grain which is not in contact with the dielectric layer and the average thickness of the dielectric layer is td and the average particle diameter of the non- When specified, Dc / td < 0.25 is satisfied,
Wherein when the average particle size of the ceramic powder added to the internal electrode is defined as Di and the average particle size of the ceramic powder used as the dielectric is defined as Dd, 0.1 <Di / Dd <1.
16. The method of claim 15,
And De / td? 0.35 when the average particle diameter of the contact dielectric grain is defined as De.
delete 16. The method of claim 15,
Wherein a ceramic powder added to the internal electrode and a ceramic powder used as the dielectric are the same in composition.

Images