KR101881595B1 - Non-volatile memory device and erase method thereof - Google Patents

Non-volatile memory device and erase method thereof Download PDF

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Publication number
KR101881595B1
KR101881595B1 KR1020110139982A KR20110139982A KR101881595B1 KR 101881595 B1 KR101881595 B1 KR 101881595B1 KR 1020110139982 A KR1020110139982 A KR 1020110139982A KR 20110139982 A KR20110139982 A KR 20110139982A KR 101881595 B1 KR101881595 B1 KR 101881595B1
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KR
South Korea
Prior art keywords
memory device
volatile memory
erase method
erase
volatile
Prior art date
Application number
KR1020110139982A
Other languages
Korean (ko)
Other versions
KR20130072517A (en
Inventor
박은영
Original Assignee
에스케이하이닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에스케이하이닉스 주식회사 filed Critical 에스케이하이닉스 주식회사
Priority to KR1020110139982A priority Critical patent/KR101881595B1/en
Publication of KR20130072517A publication Critical patent/KR20130072517A/en
Application granted granted Critical
Publication of KR101881595B1 publication Critical patent/KR101881595B1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
KR1020110139982A 2011-12-22 2011-12-22 Non-volatile memory device and erase method thereof KR101881595B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110139982A KR101881595B1 (en) 2011-12-22 2011-12-22 Non-volatile memory device and erase method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110139982A KR101881595B1 (en) 2011-12-22 2011-12-22 Non-volatile memory device and erase method thereof

Publications (2)

Publication Number Publication Date
KR20130072517A KR20130072517A (en) 2013-07-02
KR101881595B1 true KR101881595B1 (en) 2018-07-25

Family

ID=48987187

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110139982A KR101881595B1 (en) 2011-12-22 2011-12-22 Non-volatile memory device and erase method thereof

Country Status (1)

Country Link
KR (1) KR101881595B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200100232A (en) 2019-02-15 2020-08-26 한국화학연구원 A manufacturing method of a ReRAM capable of high energy efficiency
US11164640B2 (en) 2019-04-30 2021-11-02 Samsung Electronics Co., Ltd. Non-volatile memory device and programming method thereof
US11164643B2 (en) 2019-04-30 2021-11-02 Samsung Electronics Co., Ltd. Non-volatile memory device and programming method thereof
US11901012B2 (en) 2019-04-30 2024-02-13 Samsung Electronics Co., Ltd. Non-volatile memory device and programming method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102358463B1 (en) 2014-10-20 2022-02-07 삼성전자주식회사 Method of operating nonvolatile memory device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080102037A (en) * 2007-05-17 2008-11-24 주식회사 하이닉스반도체 Verifying method for multi-level cell nand flash memory device and post programming method using the same
KR100869849B1 (en) * 2007-06-29 2008-11-21 주식회사 하이닉스반도체 Method for operating flash memory device
EP2165338B1 (en) * 2007-07-03 2012-06-20 SanDisk Technologies Inc. Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
KR100954946B1 (en) * 2008-05-20 2010-04-27 주식회사 하이닉스반도체 Method of erasing a non volatile memory device
KR20100037277A (en) * 2008-10-01 2010-04-09 주식회사 하이닉스반도체 Erase method of flash memory device
KR20110001067A (en) * 2009-06-29 2011-01-06 주식회사 하이닉스반도체 Method of erase operating for nonvolatile memory device
KR101068494B1 (en) * 2009-06-29 2011-09-29 주식회사 하이닉스반도체 Method of erasing a non volatile memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200100232A (en) 2019-02-15 2020-08-26 한국화학연구원 A manufacturing method of a ReRAM capable of high energy efficiency
US11164640B2 (en) 2019-04-30 2021-11-02 Samsung Electronics Co., Ltd. Non-volatile memory device and programming method thereof
US11164643B2 (en) 2019-04-30 2021-11-02 Samsung Electronics Co., Ltd. Non-volatile memory device and programming method thereof
US11901012B2 (en) 2019-04-30 2024-02-13 Samsung Electronics Co., Ltd. Non-volatile memory device and programming method thereof

Also Published As

Publication number Publication date
KR20130072517A (en) 2013-07-02

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