KR101881380B1 - Method for growing a single crystal ingot - Google Patents

Abstract

An embodiment includes: a step of setting the radius of a single-crystal ingot; a step of setting a rotation speed range including a plurality of rotation speed values based on the set radius; a step of growing the body of the single-crystal ingot having the set radius in accordance with the plurality of set rotation speed values; a step of measuring oxygen concentration deviations on parts of the grown single-crystal ingot in response to the plurality of rotation speed values; a step of setting a final rotation speed according to the set radius based on the measured oxygen concentration deviations; and a step of growing the single-crystal ingot including the body having the set radius based on the set final rotation speed. As such, the present invention is capable of securing uniformity of an in-plane oxygen concentration of a wafer.

Description

{METHOD FOR GROWING A SINGLE CRYSTAL INGOT}

An embodiment relates to a method for growing a single crystal ingot.

A CZochralski (hereinafter referred to as " CZ method ") method is widely used as a method of growing a silicon single crystal ingot. The single crystal ingot growth method according to the CZ method is as follows.

First, a polycrystalline silicon is injected into a quartz crucible, and the quartz crucible is heated by a heating element to melt the polycrystalline silicon to form a molten liquid. Next, a seed crystal is immersed in the molten liquid, and crystallization A single crystal silicon ingot is grown by rotating the seed crystal while rotating it. For example, such a single crystal ingot growing process may include a necking process, a shouldering process, a body process, and a tail process.

The grown silicon single crystal ingot can be manufactured in the form of a wafer through slicing, etching, and polishing processes. The distribution of the in-plane oxygen concentration of the thus produced wafer is an important factor that determines the characteristics of the semiconductor device manufactured using the wafer, and maintaining a uniform oxygen concentration in the plane of the wafer can be a factor for achieving a high yield .

The embodiment provides a single crystal ingot growing method capable of ensuring uniformity of in-plane oxygen concentration of a wafer of 2% or less.

A method of growing a single crystal ingot according to an embodiment includes: setting a radius of a body of a single crystal ingot to be grown; Setting a rotation speed range including a plurality of rotation speed values, based on the set radius; Growing a single crystal ingot body having the predetermined radius according to the set plurality of rotation speed values; Measuring oxygen concentration deviations for portions of the single crystal ingot grown corresponding to the plurality of rotational speed values; Setting a final rotational speed according to the set radius based on measured oxygen concentration deviations; And growing a single crystal ingot including a body having the predetermined radius based on the set final rotation speed.

Wherein the convection of the melt in the crucible for forming the body of the single crystal ingot is divided into a center cell and an outer cell, and the range of the rotation speed is set based on a rotation speed such that a radius of the center cell is equal to the set radius .

Wherein measuring the oxygen concentration deviations comprises: slicing portions of the body of the single crystal ingot grown based on the plurality of rotational speed values to form a plurality of wafers; And measuring in-plane oxygen concentration deviations of the plurality of wafers.

Wherein the step of setting the rotational speed range of the single crystal ingot includes the steps of: setting an initial rotational speed at which the radius of the center cell becomes equal to a predetermined radius of the body; And setting the plurality of rotation speed values based on the initial rotation speed.

The plurality of rotational speed values may be values repeatedly increased by a predetermined value to the initial rotational speed.

The step of setting the final rotational speed may set any one of the rotational speeds of the single crystal ingot satisfying the oxygen concentration deviation of 0.2 [ppma] or less among the in-plane oxygen concentration deviations of the plurality of wafers to the final rotational speed have.

Among the in-plane oxygen concentration deviations of the plurality of wafers, the minimum one of the rotational speeds of the single crystal ingot satisfying the oxygen concentration variation of 0.2 [ppma] or less can be set as the final rotational speed.

According to another aspect of the present invention, there is provided a method of growing a single crystal ingot, comprising: setting a radius of a body of a single crystal ingot to be grown; Setting an angular momentum range including a plurality of angular momentum values based on the set radius; Growing a single crystal ingot body having the predetermined radius according to the plurality of angular momentum values; Measuring oxygen concentration deviations for portions of the single crystal ingot grown corresponding to the plurality of angular momentum values; Setting a final angular momentum according to the set radius based on the measured oxygen concentration deviations; And growing a single crystal ingot including a body having the predetermined radius based on the set final angular momentum.

Convection of the melt in the crucible for forming the body of the single crystal ingot is divided into a center cell and an outer circumferential cell and the angular momentum amount range can be set based on the angular momentum such that the radius of the center cell is equal to the set radius .

Wherein the setting of the angular momentum range includes: setting an initial angular momentum such that a radius of the center cell is equal to a predetermined radius of the body; And setting the plurality of angular momentum values based on the initial angular momentum.

Wherein measuring the oxygen concentration deviations comprises: slicing portions of the body of the single crystal ingot grown based on the plurality of angular momentum values to form a plurality of wafers; And measuring in-plane oxygen concentration deviations of the plurality of wafers.

The step of setting the final angular momentum may set any one of the angular momentum values of the single crystal ingot satisfying the oxygen concentration deviation of 0.2 [ppma] or less among the in-plane oxygen concentration deviations of the plurality of wafers to the final angular momentum.

The step of setting the final angular momentum may set a minimum value among angular momentum values of the single crystal ingot satisfying the oxygen concentration deviation of 0.2 [ppma] or less among the plurality of oxygen concentration deviations to the final angular momentum.

The plurality of angular momentum values may be values repeatedly increased by a predetermined value to the initial angular momentum.

In the embodiment, uniformity of the in-plane oxygen concentration of the wafer of 2% or less can be ensured.

1 is a flow chart showing a method of growing a single crystal ingot according to an embodiment.
Fig. 2 shows a single crystal growing apparatus for growing a single crystal ingot according to the single crystal ingot growing method shown in Fig.
Fig. 3A shows the relationship between the single crystal ingot and the convection region according to the revolution speed per minute.
3B shows the relationship between the radius of the single crystal ingot and the convection region.
Fig. 4 shows the convection force and the in-plane oxygen concentration deviation of the wafer in accordance with the rotational speed values of the single crystal ingot.
5 shows the relationship between the radius of the single crystal ingot and the rotational speed.
Figure 6 shows the convection in a general melt and the in-plane oxygen concentration deviation of the wafer thus produced
7 shows the distribution of the in-plane oxygen concentration of the wafer produced by the single crystal ingot grown by the final growth rate according to the embodiment
8 is a flow chart showing a method of growing a single crystal ingot according to another embodiment.
9 shows the distribution of the in-plane oxygen concentration of the wafer produced using the single crystal ingot grown according to the final angular momentum according to the embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Figure 6 shows the convection in a general melt and the in-plane oxygen concentration deviation of the wafer thus produced. Figure 6 shows the experimental results for two target wafers ref1 and ref2 with 300 mm diameter.

Referring to FIG. 6, the convection of the molten liquid in the crucible with respect to a single crystal ingot having a radius r can be divided into a center cell S1 and an outer peripheral cell S2.

The center cell S1 may be a small-scale circulation flow occurring in the molten liquid near the interface between the silicon single crystal ingot and the molten liquid.

The outer circumferential cell may be a flow that rises from the bottom of the crucible to the surface of the melt along the sidewall of the crucible and circulates around the center cell toward the surface center of the melt at the surface edge of the melt.

Since the oxygen amount contained in the outer circumferential cell S2 interferes near the growth interface of the single crystal ingot, for example, near the edge of the center cell S1 adjacent to the outer circumferential cell S2, oxygen of the edge portion of the wafer corresponding thereto The distribution may be sharply lowered, and the in-plane oxygen distribution of the wafer may become uneven.

According to the method of growing a single crystal ingot according to the embodiment, the radius (or diameter) of the center cell is made larger than the diameter (or radius) of the body of the single crystal ingot to be grown according to the diameter (or radius) of the body of the single crystal ingot , The deviation of the in-plane oxygen concentration of the wafer can be made to be 0.2 [ppma] or less, thereby ensuring the uniformity of the in-plane oxygen concentration of the wafer.

The embodiment can control the radius or the diameter of the center cell of the melt by adjusting the rotation speed or angular momentum of the single crystal ingot I.

FIG. 1 is a flow chart showing a method of growing a single crystal ingot according to an embodiment. FIG. 2 shows a single crystal growing apparatus 100 for growing a single crystal ingot according to the growing method of the single crystal ingot shown in FIG.

Referring to FIG. 1, a radius r or a diameter of a body 10 of a single crystal ingot I to be grown is set (S110).

For example, the single crystal ingot I may include a neck 5, a shoulder 7, a body 10, and a tail (not shown).

For example, the target diameter (2 x r) of the body 10 of the single crystal ingot I may be 150 mm, 200 mm, or 300 mm, but is not limited thereto.

For example, the diameter of the body 100 of the monocrystalline ingot to be actually grown may be larger than the target diameter, considering the portion of the body 100 to be cut later to form a smooth cylindrical single crystal ingot. For example, in order to produce a single crystal ingot having a radius of 150 mm, the diameter of the single crystal ingot to be actually grown can be set to 155 mm.

A rotational speed range of the single crystal ingot I including a plurality of different rotational speed values is set based on the radius r of the body 10 of the single crystal ingot I set next.

For example, the rotational speeds of the single crystal ingot (I), which include the rotational speed values of the single crystal ingot (I) such that the radius of the center cell of the melt (M) in the crucible (110) The range can be set.

Convection of the molten liquid M in the crucible 110 when the body 10 of the single crystal ingot I is grown may include a center cell and a circumferential cell. The size of the center cell is the angular momentum of the single crystal ingot I And the angular momentum of the single crystal ingot I may be proportional to the rotation speed of the single crystal ingot I. Here, the rotation speed of the single crystal ingot I may be an angular velocity.

The angular momentum AM of the single crystal ingot I can be defined by Equation (1).

AM is the angular momentum of the single crystal ingot I, and the unit may be g · cm 2 / min.

M is the mass of the single crystal ingot I and is the radius of the body 10 of the single crystal ingot I of r and AV is the angular velocity of the single crystal ingot I.

The mass M of the silicon single crystal ingot I can be defined by the formula 2 and the angular speed AV of the silicon single crystal ingot I can be defined by the formula 3, The AM _{silicon amount} can be defined by Equation (4). For example, the density of silicon may be 2.33.

Fig. 3A shows the relationship between the single crystal ingot I and the convection region according to the number of revolutions per minute, and Fig. 3B shows the relationship between the radius of the single crystal ingot I and the convection region.

In FIGS. 3A and 3B, the Y-axis is expressed as a convection region, and the convection region can be defined as a Melt force for expanding a center cell. Here, the convection force or the convection region can be expressed by the angular momentum of the single crystal ingot (I). For example, the convection force may be defined as r ⁴ × SR, the unit may be cm ⁴ × rpm, and rpm may be the number of revolutions per minute.

Referring to FIG. 3A, the convection force or convection region may be proportional to the number of revolutions per minute (SR) of the single crystal ingot I.

Increasing the number of revolutions per minute (SR) of the single crystal ingot I can increase the convection force and increase the diameter or radius of the convection region (e.g., the center cell of the melt).

3B, the convection region can be proportional to the fourth power of the radius r of the body 10 of the single crystal ingot I (see Equation 4).

The angular momentum of the single crystal ingot I can be set based on the radius r of the set single crystal ingot I and the rotation speed of the single crystal ingot I such as the revolution per minute SR.

For example, the number of revolutions per minute (SR) of the single crystal ingot I may be the number of revolutions per minute (SR) when the body 10 of the single crystal ingot I is formed.

For example, the above-mentioned plurality of different rotational speed values may be set as follows.

The initial rotational speed of the single crystal ingot I in which the radius of the center cell of the melt M is equal to the radius r of the body 10 of the single crystal ingot I can be set, So that a plurality of rotational speed values can be set.

For example, when the initial rotation speed of the set single crystal ingot I, for example, the initial rotation speed per minute SR, is k (k is a positive real number), the initial rotation speed is repeatedly increased May be set to the plurality of rotational speed values.

For example, the upper limit value of the rotation speed range may be smaller than twice the initial rotation speed per minute, but is not limited thereto.

The reason for setting the initial rotational speed as described above is that when the radius of the center cell of the melt M is smaller than the radius r of the body 10 of the single crystal ingot I, The oxygen concentration at the edge of the wafer drops sharply and the deviation of the in-plane oxygen concentration of the wafer exceeds the desired target concentration deviation.

However, the embodiment is not limited to this, and since the radius of the center cell may vary depending on different growth conditions and the like, in other embodiments, a plurality of rotational speed values may be set as follows.

For example, values obtained by repeatedly decreasing the predetermined value from the initial rotation speed to a predetermined lower limit value and values repeatedly increased from the initial rotation speed to a preset upper limit value may be set as the plurality of rotation speed values.

Next, the body 10 of the single crystal ingot I is grown according to the plurality of rotational speed values (S130).

The single crystal ingot I may be connected to a cable 120 (see FIG. 2), or a shaft, and rotated by rotating the cable 120.

For example, the body 10 of the monocrystalline ingot I may comprise a plurality of portions or portions grown based on different rotational speed values.

For example, the plurality of portions may have the same length or the same thickness in the growth longitudinal direction of the single crystal, but the present invention is not limited thereto.

For example, a first portion of the body 10 may be grown at a first rotational speed value and a second portion of the body 10 may be grown at a second rotational speed value.

Next, oxygen concentration deviations are measured (S140) for the plurality of portions of the body 10 of the single crystal ingot I grown corresponding to or based on the plurality of rotational speed values.

For example, in-plane oxygen concentration deviations of wafers composed of a plurality of parts of the body 10 corresponding to a plurality of rotational speed values can be measured.

For example, a slicing process may be used to slice parts of the body 10 of the single crystal ingot I to form a plurality of wafers and to measure in-plane oxygen concentration deviations of the plurality of wafers formed.

For example, the in-plane oxygen variation of the wafer may be a difference obtained by subtracting the minimum value from the maximum value of the in-plane oxygen concentration of the wafer in the wafer edge direction from the center of the wafer.

Next, based on the in-plane oxygen concentration deviations of the measured wafers, the final rotational speed or the target rotational speed at the time of growing the body 10 of the single crystal ingot I according to the radius r of the body of the single crystal ingot I (S150).

For example, any one of the rotational speeds of the single crystal ingot (I) satisfying the deviation of the in-plane oxygen concentration of the wafer of 0.2 [ppma] or less among the plurality of measured oxygen concentration deviations is referred to as the final rotational speed of the single crystal ingot SR). This is to ensure the uniformity of the in-plane oxygen concentration of the wafer whose deviation of the in-plane oxygen concentration of the wafer is 0.2 [ppma] or less.

For example, among the measured plurality of oxygen concentration deviations, the minimum value among the rotational speeds of the single crystal ingot I satisfying the deviation of the in-plane oxygen concentration of the wafer of 0.2 [ppma] or less may be set as the final rotational speed.

The reason why the minimum value is set to the final rotational speed of the final single crystal ingot I is that the consumption power increases as the rotational speed of the single crystal ingot I increases and the fluctuation of the monocrystalline ingot I during the growth of the body 10 Or swing of the single-crystal ingot I becomes large, which makes it difficult to control the diameter of the single crystal ingot I, and as a result, the quality of the desired single crystal ingot can not be secured.

4 shows a convection force according to the rotational speed values of the single crystal ingot I and an in-plane oxygen concentration deviation of the wafer. The radius r of the single crystal ingot I may be 153 mm.

Referring to FIG. 4, when the rotational speed value SR is 10.5 [rpm] or less, the in-plane oxygen concentration deviation of the wafer exceeds 0.2 [ppma]. On the other hand, the rotational speed value and (SR) is 11 [rpm] convection forces (Melt force) in case of the ^{6 × 10 5 [㎝ 4 ×} rpm], the in-plane oxygen concentration variation in the wafer may be a 0.2 [ppma]. Therefore, in FIG. 4, 11 [rpm] can be set to the final rotation speed.

5 shows the relationship between the radius r of the single crystal ingot and the rotation speed.

In FIG. 5, the final target diameter (2xr) of the single crystal ingot is 300mm, and the range of the radius (r) of the single crystal ingot to be grown to obtain the final target diameter may be 152mm to 160mm.

Referring to Figure 4, the in-plane oxygen concentration variation in the wafer is a is ^{6 × 10 5 [㎝ 4 ×} rpm] convection forces (Melt force) that is 0.2 [ppma]. Therefore, in FIG. 5, when the values located above the critical melt force (600000 [cm ⁴ x rpm]) line are selected as the final rotational speed with respect to the radius r of the single crystal ingot, A deviation can be obtained.

7 shows the distribution of the in-plane oxygen concentration of the wafer produced by the single crystal ingot grown at the final growth rate according to the embodiment. Plane oxygen concentration deviations (g1, g2) for two wafers having a diameter of 300 mm.

7, when the single crystal ingot is grown while rotating the single crystal ingot at the final growth rate, the radius of the center cell S11 of the melt can be equal to or greater than the radius of the body of the single crystal ingot, Oxygen interference of the outer peripheral cell S12 with respect to the portion can be suppressed and the deviation of the in-plane oxygen concentration of the wafer can be 0.2 [ppma] or less.

8 is a flow chart showing a method of growing a single crystal ingot according to another embodiment.

Referring to FIG. 8, the radius of the body of the single crystal ingot to be grown is set (S201).

An angular momentum range (or range of the melt force) including a plurality of different angular momentum values (or a plurality of melt forces) is set based on the radius of the body of the single crystal ingot set next (S220).

The angular momentum values (or melt forces) of the single crystal ingot I to make the radius of the center cell of the melt M in the crucible 110 equal to or greater than the radius r of the body 10 of the single crystal ingot I The angular momentum amount range (or the range of the melt force) can be set to include.

The initial angular momentum (or initial melt force) of the single crystal ingot I in which the radius of the center cell of the melt M is equal to the radius r of the body 10 of the single crystal ingot I can be set, A plurality of angular momentum values (or a plurality of melt forces) can be set based on the initial angular momentum (or initial melt force).

For example, it is possible to set the angular momentum values (or the plurality of melt force values) repeatedly increased by a predetermined value to the initial angular momentum (or initial melt force) of the set single crystal ingot I.

For example, the upper limit value of the angular momentum value may be smaller than twice the initial angular momentum amount, but is not limited thereto.

Alternatively, for example, values obtained by repeatedly decreasing the predetermined value from the initial angular momentum amount (or the initial melt force) to a preset lower limit value, and repeatedly increasing the predetermined value from the initial angular momentum amount (or initial melt force) to a predetermined upper limit value And may be set to the plurality of angular momentum values (or a plurality of melt forces).

Next, the body 10 of the single crystal ingot I is grown according to a plurality of angular momentum values (or a plurality of melt force values) included in the angular momentum range (or the range of the melt force) (S230).

For example, the body 10 of the single crystal ingot I may comprise a plurality of portions or portions grown based on different angular momentum values (or melt force values).

Next, the oxygen concentration fluctuation for portions of the body 10 of the single crystal ingot I grown corresponding to or based on a plurality of angular momentum values (or melt force values) included in the angular momentum range (or the range of the melt force) (S240).

For example, it is possible to measure in-plane oxygen concentration deviations of wafers composed of a plurality of parts of the body 10 corresponding to a plurality of angular momentum values (or a plurality of melt force values).

For example, a slicing process may be used to slice parts of the body 10 of the single crystal ingot I to form a plurality of wafers and to measure in-plane oxygen concentration deviations of the plurality of wafers formed.

Next, based on the in-plane oxygen concentration deviations of the measured wafers, the final angular momentum (or final melt force) at the time of growing the body 10 of the single crystal ingot I according to the radius r of the body of the single crystal ingot I (S250).

For example, any one of the angular momentum values (or melt force values) of the single crystal ingot I satisfying the deviation of the in-plane oxygen concentration of the wafer of 0.2 [ppma] or less among the plurality of measured oxygen concentration deviations is referred to as a final angular momentum Melt force). This is to ensure the uniformity of the in-plane oxygen concentration of the wafer whose deviation of the in-plane oxygen concentration of the wafer is 0.2 [ppma] or less.

For example, among the measured plurality of oxygen concentration deviations, the minimum value among the angular momentum values (or melt force values) of the single crystal ingot I satisfying the deviation of the in-plane oxygen concentration of the wafer to 0.2 [ Melt force).

The reason why the minimum angular momentum is set as the final angular momentum is that as the angular momentum of the single crystal ingot I increases, the consumed power increases and the swing or swing of the single crystal ingot I increases during the growth of the body 10, This makes it difficult to control the diameter of the single crystal ingot (I).

A single crystal ingot I having a body 10 having a radius r is grown on the basis of the final set angular momentum (or final melt force) (S260).

When the radius r of the single crystal ingot I is 150 mm, the melt fource is increased within the range of 3.5 10 ⁵ [cm ⁴ x rpm] to 8.5 10 ⁵ [cm ⁴ x rpm] The in-plane oxygen concentration fluctuation of the wafer corresponding to the parts of the grown body was measured by growing the body of the ingot. As a result, in the section where the melt fusing was 6 × 10 ⁵ [cm ⁴ × rpm] or more, And the oxygen concentration deviation was 0.2 [ppma] or less.

Here, the melt force can be defined as r ⁴ × SR in Equation (4).

9 shows the distribution of the in-plane oxygen concentration of the wafer produced using the single crystal ingot grown according to the final angular momentum according to the embodiment. In Fig. 9, the target diameter is 300 mm, and the diameter of the single crystal ingot grown by experiment may be 310 mm.

f1 represents the in-plane oxygen concentration deviation of the wafer made of the single crystal ingot grown according to the embodiment. the final rotational speed of the ingot for f1 may be a number of days 10.5 [rpm] and convection forces (Melt force) is ^{6 × 10 5 [㎝ 4 ×} rpm].

Ref represents the in-plane oxygen concentration deviation of the wafer when the convection force is 5 × 10 ⁵ [cm ⁴ × rpm].

Referring to Fig. 9, in the case of Ref, the deviation of the in-plane oxygen concentration of the wafer exceeds 0.2 [ppma], but in the case of f, the deviation of the in-plane oxygen concentration of the wafer may be 0.2 [ppma] or less.

The in-plane oxygen concentration fluctuation of the wafer produced from the single crystal ingot grown on the basis of the final angular momentum as described above can be made to be 0.2 [ppma] or less, which makes it possible to ensure the uniformity of the oxygen concentration distribution, A wafer having an in-plane uniform oxygen concentration distribution can be manufactured.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: Crucible 120: Cable.

Claims (14)

Setting a radius of the body of the single crystal ingot to be grown;
Setting a rotation speed range including a plurality of rotation speed values for rotation of the single crystal ingot based on the set radius;
Growing a single crystal ingot body having the predetermined radius according to the set plurality of rotation speed values;
Forming a plurality of wafers by slicing portions of the body of the single crystal ingot grown corresponding to the plurality of rotation speed values;
Measuring in-plane oxygen concentration deviations for the plurality of wafers;
Setting a minimum value among rotational speeds of the single crystal ingot satisfying an oxygen concentration deviation of 0.2 [ppma] or less among the in-plane oxygen concentration deviations corresponding to the plurality of wafers to a final rotational speed; And
And growing a single crystal ingot including a body having the predetermined radius based on the set final rotation speed. The method according to claim 1,
Convection of the melt in the crucible for forming the body of the single crystal ingot is divided into a center cell and an outer cell,
Wherein the range of the rotation speed is set based on a rotation speed such that the radius of the center cell becomes equal to the set radius. The method according to claim 1,
Wherein each of the portions of the body of the single crystal ingot is grown to have the same length in the longitudinal direction of the single crystal ingot based on any one of the plurality of rotational speed values. 3. The method according to claim 2, wherein the step of setting the rotation speed range of the single crystal ingot comprises:
Setting an initial rotation speed at which the radius of the center cell becomes equal to a predetermined radius of the body; And
And setting the plurality of rotation speed values based on the initial rotation speed. 5. The method of claim 4,
Wherein the plurality of rotation speed values are values repeatedly increased by a predetermined value to the initial rotation speed. 6. The method of claim 5,
Wherein an upper limit value of the rotation speed range is smaller than twice an initial rotation speed. delete Setting a radius of the body of the single crystal ingot to be grown;
Setting an angular momentum range including a plurality of angular momentum values for rotation of the single crystal ingot based on the set radius;
Growing a single crystal ingot body having the predetermined radius according to the set angular momentum values;
Forming a plurality of wafers by slicing portions of the body of the single crystal ingot grown corresponding to the plurality of angular momentum values;
Measuring in-plane oxygen concentration deviations for the plurality of wafers;
Setting a minimum value among angular momentum values of a single crystal ingot satisfying an oxygen concentration deviation of 0.2 [ppma] or less among the in-plane oxygen concentration deviations corresponding to the plurality of wafers to the final angular momentum; And
And growing a single crystal ingot including a body having the predetermined radius based on the set final angular momentum. 9. The method of claim 8,
Convection of the melt in the crucible for forming the body of the single crystal ingot is divided into a center cell and an outer cell,
Wherein the angular momentum range is set based on an angular momentum such that a radius of the center cell becomes equal to the set radius. 10. The method according to claim 9, wherein the step of setting the angular momentum range comprises:
Setting an initial angular momentum such that a radius of the center cell becomes equal to a predetermined radius of the body; And
And setting the plurality of angular momentum values based on the initial angular momentum. 11. The method of claim 10,
Wherein the plurality of angular momentum values are values repeatedly increased by a predetermined value to the initial angular momentum. 12. The method of claim 11,
Wherein the upper limit of the angular momentum range is less than twice the initial angular momentum. delete delete

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