KR101860991B1 - led module and its fabrication method - Google Patents

led module and its fabrication method Download PDF

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Publication number
KR101860991B1
KR101860991B1 KR1020160013389A KR20160013389A KR101860991B1 KR 101860991 B1 KR101860991 B1 KR 101860991B1 KR 1020160013389 A KR1020160013389 A KR 1020160013389A KR 20160013389 A KR20160013389 A KR 20160013389A KR 101860991 B1 KR101860991 B1 KR 101860991B1
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KR
South Korea
Prior art keywords
flip chip
material layer
adhesive material
phosphor layer
led
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Application number
KR1020160013389A
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Korean (ko)
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KR20170092265A (en
Inventor
오승현
조성식
김인수
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주식회사 루멘스
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Priority to KR1020160013389A priority Critical patent/KR101860991B1/en
Publication of KR20170092265A publication Critical patent/KR20170092265A/en
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Publication of KR101860991B1 publication Critical patent/KR101860991B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The LED module is started. The LED module includes a substrate; A plurality of flip chip LEDs arrayed on the substrate; A reflective wall attached to the substrate to form a cavity around the flip chip LED; A phosphor layer disposed on the reflective wall to cover the cavity; And an adhesive material layer previously formed on the bottom surface of the phosphor layer to adhere the phosphor layer to the reflective wall, wherein when the adhesive material layer adheres the fluorescent material layer to the reflective wall, A part of which is filled in the cavity.

Description

[0001] LED module and its fabrication method [0002]

The present invention relates to an LED module, and more particularly, to an LED module that can be advantageously used in a linear light source device such as an edge type backlight device or a long extended tubular / channel type lighting device.

A linear LED module is used for a linear light source device such as an edge type backlight device or a tube type or channel type lighting device. Generally, a linear LED module includes a bar substrate and a plurality of LED packages long arrayed on the bar substrate.

However, since such an LED module is manufactured using complicated LED packages, the manufacturing time is long and the cost is low. In addition, since the above-mentioned LED module uses LED packages having a large color deviation due to the D / P process, color uniformity is inevitably lowered. As a result, binning is indispensably required. Furthermore, despite the above binning, there is still a limit to improving the color uniformity of the LED module.

In addition, since the LED modules are formed by arranging the LED packages having narrow directivity characteristics at predetermined intervals, the LED modules can be formed as continuous light sources or surface light sources due to the dark zones existing between the adjacent LED packages. It can not emit light, and a color deviation is generated for each section. In addition, the reflector provided in each LED package acts as an element for increasing the thermal resistance, thereby greatly reducing the reliability. In addition, the above-mentioned LED module has a limitation in being slim and compact due to the basic height of the LED package.

Conventionally, there has been proposed an LED module in which an LED chip in which a phosphor is conformally coated on a top surface thereof is directly mounted on a substrate and the LED chips are encapsulated with a translucent encapsulation material. However, the conventional LED module has a problem in that the color uniformity of finally obtained light, especially white light, is deteriorated due to a large amount of light emitted directly from the LED chips without passing through the phosphor layer. In addition, this technique also requires that the LED chips have a separately conformally coated phosphor layer, so that the color deviation is serious, and therefore, the binning of the LED chips is indispensable.

US7217004 (May 15, 2007)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a flip chip LED, which comprises a plurality of flip chip LEDs arrayed on a substrate and uses a bonding portion for adhering an adhesive material layer previously formed on the bottom surface of the phosphor layer to a reflecting wall, And to provide an LED module having a compact and slim structure, which can be manufactured at a low cost with improved color uniformity.

An LED module according to an aspect of the present invention includes: a substrate; A plurality of flip chip LEDs arrayed on the substrate; A reflective wall attached to the substrate to form a cavity around the flip chip LED; A phosphor layer disposed on the reflective wall to cover the cavity; And an adhesive material layer previously formed on the bottom surface of the phosphor layer to adhere the phosphor layer to the reflective wall, wherein when the adhesive material layer adheres the fluorescent material layer to the reflective wall, A part of which is filled in the cavity.

According to one embodiment, the plurality of flip chip LEDs may be linearly arrayed.

According to one embodiment, the reflective wall includes a pair of band-shaped reflective films attached to the substrate while facing each other, and the plurality of flip chip LEDs are arrayed linearly long between the pair of band- .

According to one embodiment, when the adhesive material layer adheres the fluorescent material layer to the reflective wall, a part of the adhesive material layer compressed between the reflective wall and the fluorescent material layer expands into the cavity.

According to one embodiment, the adhesive material layer comprises a silicone resin.

According to one embodiment, the adhesive material layer comprises a silicone resin mixed with a dispersing agent.

According to one embodiment, the adhesive material layer includes a bonding portion interposed between the phosphor layer and the reflection wall in a state where the phosphor layer and the reflection wall are attached, and a bonding portion located in the cavity and having a larger thickness than the bonding portion .

According to another aspect of the present invention, there is provided a method of manufacturing an LED module, the method including: arraying a plurality of flip chip LEDs on a substrate; Attaching a reflective wall on the substrate to form a cavity around the flip chip LED; Disposing a phosphor layer on which an adhesive material layer has been formed in advance on the bottom surface of the reflective wall to cover the cavity; And pressing the phosphor layer against the upper surface of the reflective wall so as to attach the phosphor layer to the upper surface of the reflective wall by the adhesive material layer, wherein during the pressing step, Lt; / RTI >

According to an embodiment, the step of arraying the flip chip LEDs includes linearly arraying a plurality of flip chip LEDs, wherein the step of forming the cavities comprises forming a pair of band- And attaching to an upper surface of the substrate.

According to one embodiment, the step of pressurizing comprises performing heating to increase fluidity in the adhesive material layer

An LED module according to the present invention comprises a plurality of flip chip LEDs arrayed on a substrate and includes a bonding portion for adhering an adhesive material layer previously formed on the bottom surface of the phosphor layer to a reflecting wall and an encapsulating portion for collectively encapsulating the flip chip LED It has an advantage that it can be manufactured at a low cost with improved color uniformity and further has a compact and slim structure.

In the LED module according to the present invention, light emitted from a plurality of flip chip LEDs passes through a phosphor layer having one light emission characteristic, so that color uniformity of light can be secured without binning. In addition, the LED module according to the present invention has an advantage of solving the problem of the dark zone occurring between neighboring LED packages of the conventional LED module.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a projection perspective view showing an LED module according to an embodiment of the present invention; Fig.
2 is an exploded perspective view illustrating an LED module according to an embodiment of the present invention.
3 is a longitudinal sectional view illustrating an LED module according to an embodiment of the present invention.
4 is a cross-sectional view taken along line AA in Fig.
5 is a view for explaining a method of manufacturing an LED module according to an embodiment of the present invention.
6 is an enlarged photograph of an LED module manufactured according to an embodiment of the present invention by cutting the LED module laterally.
7A is a photograph showing a light emitting state by applying electric power to an LED module fabricated according to the present invention, and FIG. 7B is a photograph showing a light emitting state by applying power to a conventional LED module.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings and the description thereof are intended to aid those of ordinary skill in the art in understanding the present invention. Accordingly, the drawings and description are not to be construed as limiting the scope of the invention.

FIG. 1 is an exploded perspective view illustrating an LED module according to an embodiment of the present invention, FIG. 2 is an exploded perspective view illustrating an LED module according to an embodiment of the present invention, FIG. 3 is a cross- FIG. 4 is a cross-sectional view taken along AA of FIG. 3. FIG.

1 to 4, the LED module 1 according to an exemplary embodiment of the present invention is advantageously used in a linear light source device such as an edge type backlight device or a long extended tubular / channel type illumination device A plurality of flip chip LEDs 3 arranged on the upper surface of the substrate 2 in a longitudinally and linearly arrayed manner in the longitudinal direction, A reflective wall 4 attached to form a long cavity around the plurality of flip chip LEDs 3 and an elongated phosphor layer 5 disposed on the reflective wall 4 to cover the cavity And an adhesive material layer 6 formed on the bottom surface of the phosphor layer 5 so as to adhere the phosphor layer 5 to the reflective wall 5.

The adhesive material layer 6 formed on the bottom surface of the phosphor layer 5 has a constant original thickness before the fluorescent material layer 5 adheres to the upper surface of the reflective wall 4. [ When the adhesive material layer 6 adheres the phosphor layer 5 to the upper surface of the reflective wall 4, a part of the adhesive material layer 6 completely fills the inside of the cavity.

Thus, after the phosphor layer 5 is completely adhered to the reflective wall 4 by the adhesive material layer 6, the adhesive material layer 6 is adhered to the adhesive layer 6 having a thickness smaller than the original thickness (6a) having an original thickness and a sealing portion (6b) having a thickness larger than the thickness of the bonding portion (6a). At this time, the bonding portion 6a is interposed between the phosphor layer 5 and the reflective wall 4, and the sealing portion 6 is located in the cavity.

As described above, the plurality of flip chip LEDs 3 are linearly arrayed and are mounted on the substrate 2 by flip-chip bonding, so bonding wires are omitted on the upper part. The adhesive material layer 6 formed on the bottom surface of the phosphor layer 5 is compressed and deformed at the upper portion of the flip chip LED 3 due to the absence of bonding wires or the like on the flip chip LED 3, 3) and the substrate 2 are not adversely affected.

The flip chip LED 3 includes a transparent substrate 31, a first conductivity type semiconductor layer 32, an active layer 33 and a second conductivity type semiconductor layer 34 in this order from top to bottom. A portion of the first conductivity type semiconductor layer 32 opened by the first electrode pad 35a is connected to the first electrode pad 35a and a portion of the second conductivity type semiconductor layer 34 is connected to the second electrode pad 35b . The insulating layer 36 insulates the first electrode pad 35a from the second conductive semiconductor layer 34 and the second electrode pad 35b while the second electrode pad 35b contacts the first conductive semiconductor layer 34. [ Layer 32 and the first conductive pad 35a. The transmissive substrate 31 is a growth substrate used for growing the first conductivity type semiconductor layer 32, the active layer 33 and the second conductivity type semiconductor layer 34 of the gallium nitride type, more preferably, Lt; / RTI > The first conductive semiconductor layer 32 and the second conductive semiconductor layer 34 may be an n-type semiconductor layer and a p-type semiconductor layer, and the active layer may include a multi-quantum well. When the flip chip LED 3 is mounted on the substrate 2, the first electrode pad 35a and the second electrode pad 35b are electrically connected with the solder bumps b1 and b2 on the substrate 2, And are connected to the electrodes 2a and 2b, respectively.

The reflective wall 4 includes a pair of band-shaped reflective films 4a and 4b that are attached on the substrate 2 while facing each other. When the plurality of flip chip LEDs 3 are arranged long to form one LED array, the pair of band-shaped reflecting films 4a and 4b are arranged so as to face each other on the front side and the rear side of the LED array Is attached on the substrate (2). It is preferable that the strip reflective films 4a and 4b and the flip chip LED 2 have substantially the same height on the substrate 2. [ The band-shaped reflective film (4a, 4b) is a resin containing a silicone resin, an epoxy resin or at least one of them as an example TiO 2, SiO 2, ZrO 2 , PbCO 3, PbO, Al 2 O 3, ZnO and Sb 2 O 3 may be mixed with at least one selected from the group consisting of a sheet-shaped reflective film preliminarily molded and then cut into strips. Most preferably, the strip-shaped reflective films 4a and 4b are made of a white silicone resin prepared by mixing a most preferred TiO 2 or SiO 2 with a silicone resin.

On the other hand, the fluorescent layer 5 is formed on the upper surface of the reflecting wall 4, more specifically, on the upper surface of the reflecting film 4a, 4b, so as to cover the upper part of the cavity in which the plurality of flip chip LEDs 3 are arrayed. And an adhesive material layer 6 for attaching the phosphor layer 5 to the reflecting wall 4 is formed on the bottom surface to a predetermined thickness. The phosphor layer 5 wavelength-converts light generated in the flip chip LED 3, and white light can be produced by mixing the wavelength-converted light and the non-wavelength light. The phosphor layer 5 may be formed by molding a resin uniformly containing one or more kinds of phosphors. Alternatively, the phosphor layer 5 may be formed by uniformly coating the phosphor on one surface of the translucent film.

The adhesive material layer 6 is formed of a translucent silicone resin and has a predetermined thickness on the bottom surface of the phosphor layer 5. When the phosphor layer 5 is disposed on the upper surface of the reflective wall 4, a portion of the adhesive material layer 6 is in contact with the reflective wall 4 at the bottom of the phosphor layer 5, And a part thereof is in contact with the cavity.

When the heating of the adhesive material layer 6 is performed while the fluorescent material layer 5 is pressed against the reflective wall 4 in a roll to roll manner, The adhesive layer 6a for adhering the phosphor layer 5 to the reflective wall 4 and the remaining part of the adhesive material layer 6 fill the inside of the cavity to form an encapsulating portion 6b. Here, the phosphor layer 5 is brought into close contact with the upper surface of the flip chip LED 3 as close as possible to the flip chip LED 3, which is possible through the use of the flip chip LED 3 without the bonding wire.

A part of the adhesive material layer 6 compressed between the reflecting wall 4 and the phosphor layer 5 expands into the cavity to form the sealing portion 6b, Has a first thickness less than the original thickness of the material layer (6), and the sealing portion (6b) has a second thickness greater than the original thickness of the adhesive material layer (6). The sealing portion 6b encapsulates the plurality of flip chip LEDs 3 to increase the reliability and durability of the LED module 1.

At this time, it is preferable to add a diffusing material such as TiO 2 or SiO 2 to the silicone resin constituting the adhesive material layer 6, and the sealing portion 6b of the adhesive material layer 6 containing the dispersing material may be used, Contributes greatly to minimizing mura in the display or illumination to which the LED module 1 is applied.

In addition, a phosphor may further be included in a region between the reflective wall 4 and the phosphor layer 5 and a region between the flip chip LED 3 and the phosphor layer 5, Or by including a phosphor in the material layer 6.

Now, a manufacturing method of the above-described LED module will be briefly described with reference to FIG. Note that the contents omitted from the following description are in accordance with the contents described above.

First, a bar substrate 2, a phosphor layer 5 provided on a bottom surface of the adhesive material layer 6, a plurality of flip chip LEDs 3 and a pair of strip-shaped reflective films 4a , 4b are prepared.

Referring now to FIG. 5, a plurality of flip chip LEDs 3 are mounted on a bar substrate 2 so as to be linearly arrayed. Next, a pair of band-shaped reflective films 4a and 4b are attached to the upper surface of the substrate 2 in parallel and facing each other to form one long cavity C around the array of the flip chip LEDs 3 do. Next, a fluorescent substance layer 5 having an adhesive material layer 6 formed on its bottom surface in advance is disposed on the upper surface of the pair of band-shaped reflecting films 4a and 4b, and the cavity C is formed with the fluorescent substance layer 5 Cover. Next, the phosphor layer 5 is pressed in a roll-to-roll manner while increasing the temperature. A part of the adhesive material layer 6 adheres the phosphor layer 5 to the upper surface of the strip reflective films 4a and 4b and the remaining part of the adhesive material layer 6 completely Fill it.

FIG. 6 is an enlarged photograph of an LED module manufactured according to an embodiment of the present invention. Referring to FIG. 6, a flip chip LED is mounted on a substrate, and a band- A reflective film is attached and a phosphor layer on which an adhesive material layer containing a light transmitting resin is formed on a bottom surface is placed on a pair of band reflective films so as to cover the cavity between the pair of band reflective films, So that the edge portion forms a thin bonding portion between the band-shaped reflecting film and the phosphor layer, and the central portion is filled into the cavity to form an encapsulant surrounding the flip chip LEDs.

7A is a photograph showing a light emitting state by applying electric power to an LED module fabricated using a flip chip LED as described above. FIG. 7B is a photograph showing a light emitting state . Referring to FIG. 7 (a), the LED module according to the present invention emits light which is almost linearly continuous without a dark zone, whereas in FIG. 7 (b), light emitted from a conventional LED module It can be seen that a dark zone occurs between the LED package. Also, it can be seen that the gladiator phenomenon occurs severely in the conventional LED module.

.

2… ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... Board
3 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... Flip chip LED
4… ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... Reflective wall
5 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... The phosphor layer
6 ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... Adhesive layer

Claims (14)

Board;
A plurality of flip chip LEDs arrayed on the substrate;
A reflective wall attached to the substrate to form an elongated cavity having openings at both ends around the flip chip LED;
A phosphor layer disposed on the reflective wall to cover the cavity; And
And an adhesive material layer formed on a bottom surface of the phosphor layer to adhere the phosphor layer to the reflecting wall,
Wherein the adhesive material layer has a bonding portion interposed between the phosphor layer and the reflecting wall in a state where the phosphor layer and the reflecting wall are attached to each other and a bonding portion having a larger thickness than the bonding portion and filled in the cavity, And an encapsulating portion which is in contact with the upper surface and the side surface of the flip chip LED,
Wherein the reflective wall comprises a pair of strip-shaped reflective films attached to the substrate while facing each other, wherein the plurality of flip-chip LEDs are linearly arrayed between the pair of strip-
Wherein the band-shaped reflecting film and the flip chip LED have the same height. The method according to claim 1, wherein when the adhesive material layer attaches the fluorescent material layer to the reflective wall, a part of the adhesive material layer compressed between the reflective wall and the fluorescent material layer expands into the cavity by heat or pressure Features an LED module. delete The LED module of claim 1, further comprising a phosphor in a region between the reflective wall and the phosphor layer. delete The LED module of claim 1, further comprising a phosphor in a region between the flip chip LED and the phosphor layer. delete delete The LED module of claim 1, wherein the adhesive material layer comprises a silicone resin. The LED module of claim 1, wherein the adhesive material layer comprises a silicone resin mixed with a dispersing material. delete Arraying a plurality of flip chip LEDs on a substrate;
Attaching a reflective wall on the substrate to form an elongated cavity having both ends open around the flip chip LED;
Disposing a phosphor layer on which an adhesive material layer has been formed in advance on the bottom surface of the reflective wall to cover the cavity; And
And pressing the phosphor layer against the upper surface of the reflecting wall to adhere the phosphor layer to the upper surface of the reflecting wall by the adhesive material layer,
Wherein the adhesive material layer includes a bonding portion interposed between the fluorescent layer and the reflective wall, and a bonding portion having a greater thickness than the bonding portion and being filled in the cavity so that the upper surface of the flip chip LED and the upper surface of the flip chip LED A sealing portion contacting the side surface,
The step of arraying the flip chip LEDs includes linearly arraying a plurality of flip chip LEDs,
Wherein the forming of the cavity includes attaching a pair of strip-shaped reflective films constituting the reflective wall to the upper surface of the substrate,
Wherein the strip-shaped reflective film and the flip chip LED have the same height. delete 13. The method of claim 12, wherein the pressing step performs heating to increase the fluidity of the adhesive material layer.
KR1020160013389A 2016-02-03 2016-02-03 led module and its fabrication method KR101860991B1 (en)

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KR100609734B1 (en) * 2004-07-02 2006-08-08 럭스피아 주식회사 Led package for use in back light of lcd and method of the same
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KR20120104734A (en) * 2011-03-14 2012-09-24 삼성전자주식회사 Apparatus for menufacturing of light emitting device package and menufacturing method thereof
JP5864367B2 (en) * 2011-06-16 2016-02-17 日東電工株式会社 Fluorescent adhesive sheet, light-emitting diode element with phosphor layer, light-emitting diode device, and manufacturing method thereof
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