KR101858368B1 - Manufacturing apparatus of semiconductor device - Google Patents

Manufacturing apparatus of semiconductor device Download PDF

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KR101858368B1
KR101858368B1 KR1020160173409A KR20160173409A KR101858368B1 KR 101858368 B1 KR101858368 B1 KR 101858368B1 KR 1020160173409 A KR1020160173409 A KR 1020160173409A KR 20160173409 A KR20160173409 A KR 20160173409A KR 101858368 B1 KR101858368 B1 KR 101858368B1
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recognition
semiconductor element
base
semiconductor device
mounting head
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KR1020160173409A
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KR20170093690A (en
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다이스케 사쿠라이
마사루 하마히라
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파나소닉 아이피 매니지먼트 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Supply And Installment Of Electrical Components (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

Provided is a mounting apparatus for a semiconductor device which can be mounted on a substrate with a very high accuracy even in a semiconductor device having a large external appearance in a short time.
The semiconductor element 2 sucked and fixed by the mounting head 1 is observed and aligned by the recognition camera 11 arranged on the side of the mounting head. An optical component 10 is disposed inside the mounting head 1 at a position opposite to the recognition camera 11 so that the optical path is branched into at least two paths and at least two recognition marks The optical component 10 is disposed at a position where light is reflected perpendicularly to the optical axis 3. All the optical components 10 are fixed to the base 9 of the same plane 9a.

Description

TECHNICAL FIELD [0001] The present invention relates to a manufacturing apparatus for a semiconductor device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus for manufacturing a semiconductor device by mounting a semiconductor element on a substrate.

2. Description of the Related Art [0002] With the progress of miniaturization and high performance of electronic devices typified by smart phones or tablet terminals in recent years, there has been a trend toward higher density of semiconductor elements used in these terminals, more pin terminals of electrode terminals, Is accelerating. Therefore, in a mounting apparatus for mounting a semiconductor element on a substrate, it is required to mount the element in a limited narrow area of the substrate with high accuracy.

Usually, in a semiconductor mounting method called die bonding, a recognition mark formed on the electrode surface of a semiconductor element and a recognition mark formed on the electrode surface of the substrate are read by a recognition means such as a camera, and based on the obtained relative position information, And then mounted on the printed circuit board with a predetermined precision. However, in a conventional mounting apparatus, since a suction nozzle of a semiconductor element is made of an opaque member, a recognition mark of a semiconductor element is recognized by a CCD camera or the like before the semiconductor element is adsorbed by the suction nozzle. Therefore, there is a problem in that the positional deviation when the semiconductor element is sucked by the suction nozzle is not corrected, and the semiconductor device is mounted while shifting from the recognition position, and high precision can not be achieved.

To cope with this demand, an optical path direction changing member is provided in the suction nozzle, and the recognition mark of the semiconductor element adsorbed by the suction nozzle is read by the recognition means provided on the side of the suction nozzle, And corrects the obtained positional deviation to improve the accuracy of the mounting (for example, refer to Patent Document 1).

Fig. 9A is a configuration diagram conceptually showing a mounting apparatus 101 of a semiconductor device proposed in Patent Document 1. Fig. The mounting apparatus 101 is an apparatus for mounting the semiconductor element 102 on the substrate 103. [ A plurality of positioning marks 104 for positioning are formed on the semiconductor element 102. A plurality of positioning marks 105 for positioning are arranged outside the area for mounting the semiconductor element 102 As shown in Fig. A prism 109 is provided as an optical path direction changing means inside the suction nozzle 106 for holding and holding the semiconductor element 102. A prism 109 is provided on the inclined surface 109a of the prism 109, The recognition mark 104 and the reflection image of the recognition mark 105 of the substrate 103 are changed to the side direction by total reflection. The lower portion and the side portion of the prism inclined surface 109a in the optical path are made of transparent glass. Therefore, the position information of the recognition mark 104 and the recognition mark 105 can be read by the CCD camera 111 provided on the side of the suction nozzle 106. [

9B is a plan view of the semiconductor element 102 and the substrate 103 showing an example of alignment of the recognition marks 104 and 105 in the mounting apparatus 101 of Fig. The recognition mark 104 of the semiconductor element 102 and the recognition mark 105 of the substrate 103 located outside the recognition mark 104 are arranged in a range of the visual field width W or less of the CCD camera 111 And alignment is performed. By reading these recognition marks 104 and 105 in a single field of view, only by positioning the CCD camera 111 in the X or Y direction, it is possible to focus on the recognition marks 104 and 105 do.

According to the above-described mounting apparatus 101, since the CCD camera 111 is disposed separately from the drive shaft of the suction nozzle 106, the center of the suction nozzle 106, that is, the suction nozzle 106 is held It is possible to press the semiconductor device 102 at a central portion thereof, thereby eliminating the occurrence of a moment at the central portion, preventing positional deviation at the time of bonding, and greatly improving the mounting accuracy. Especially, it is possible to facilitate alignment and bonding in a minute semiconductor element (for example, a semiconductor element having a square of 0.2 to 0.5 mm in one side).

Patent Document 1: International Publication No. 2003/041478

Advances in high-density semiconductor devices have been remarkable, and it is required to mount high-performance semiconductor elements having a large external shape such as a large-capacity memory or application processor with higher precision than the conventional ones.

However, in the semiconductor device manufacturing apparatus proposed in Patent Document 1, the magnification of the CCD camera needs to be set to a low magnification because the semiconductor device having a large outline is recognized in one field of view. However, since the resolution of the image is lowered, there is a problem that the recognition precision is lowered and the deviation of the mounting accuracy is increased. For example, when a semiconductor device having a size of 12 mm x 12 mm is used and a CCD camera having a magnification of 0.3 times is used, the resolution per pixel is 12 to 15 mu m, Mu] m.

On the other hand, when it is intended to recognize a large semiconductor element 102 as a two-view field instead of a one-view field, the CCD camera 111 must be driven in order to recognize recognition marks individually. Therefore, the CCD camera 111 is held at a constant distance from the CCD camera 111 so as to keep the optical path length from the CCD camera 111 to the recognition mark 104 on the semiconductor element 102 constant. It needs to be driven. Therefore, the time until recognition is prolonged, and there is a problem in productivity.

In view of the above problems, an apparatus for manufacturing a semiconductor device of the present invention aims at providing a semiconductor device mounting apparatus capable of mounting a semiconductor element on a substrate in a very short time with very high accuracy even in a semiconductor device having a large external appearance .

In order to achieve the above object, an apparatus for manufacturing a semiconductor device according to an aspect of the present invention is a semiconductor device manufacturing apparatus that mounts a mounted member on which a plurality of alignment marks for alignment are formed, onto a substrate via a bonding layer using a mounting head A semiconductor device manufacturing apparatus comprising: a suction holding member for holding and holding the mounted member in contact with a surface on which the recognition mark is formed; a first heating device for heating the mounted member held by the suction holding member; An image recognition device for simultaneously recognizing the recognition mark of the member to be packaged on the outside of the mounting head to acquire image recognition information; A plurality of optical components for simultaneously delivering the image information of the mark to the image recognition device; Based on the information, and comprising a position calculation for obtaining the position of the to-be-mounting member, the plurality of optical elements are all fixed on the same plane on a single base.

According to this aspect of the present invention, even a semiconductor device having a large external shape can be mounted on a substrate in a very short time with very high accuracy.

1 is a schematic cross-sectional view showing a configuration of an apparatus for manufacturing a semiconductor device according to a first embodiment of the present invention
2 is a schematic plan view showing the configuration of an optical component in a mounting head according to the first embodiment of the present invention
3 is a plan view of a semiconductor device according to the first embodiment of the present invention.
4 is a conceptual diagram showing an observation image by a recognition camera of a semiconductor element in the first embodiment of the present invention
5 is a schematic cross-sectional view showing the structure of a semiconductor device manufacturing apparatus according to the first embodiment of the present invention
6A is a schematic cross-sectional view sequentially showing a method for manufacturing a semiconductor device according to the first embodiment of the present invention
6B is a schematic cross-sectional view sequentially showing the method of manufacturing the semiconductor device in the first embodiment of the present invention
6C is a schematic cross-sectional view sequentially showing the method of manufacturing the semiconductor device according to the first embodiment of the present invention
FIG. 6D is a schematic cross-sectional view sequentially showing the method of manufacturing the semiconductor device according to the first embodiment of the present invention
7 is a schematic sectional view showing a semiconductor device manufacturing apparatus according to a second embodiment of the present invention
8 is a schematic sectional view showing a semiconductor device manufacturing apparatus according to the third embodiment of the present invention
9 (a) is a schematic configuration diagram conceptually showing a mounting apparatus of a semiconductor device proposed in Patent Document 1
Fig. 9B is a plan view of the semiconductor element and the substrate, showing an example of alignment of the recognition mark in the mounting apparatus of Fig. 9 (a)

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment)

1 is a schematic cross-sectional view showing a configuration of an apparatus for manufacturing a semiconductor device according to a first embodiment of the present invention. The apparatus for manufacturing a semiconductor device according to the first embodiment of the present invention shown in Fig. 1 includes a mounting head 1 having a transparent suction nozzle 5 having a suction hole 5a capable of suctioning a semiconductor element 2, A stage 12 for fixing a substrate 13 provided so as to face the mounting head 1 and a head lift driving mechanism 40 for driving the mounting head 1 in a direction perpendicular to the plane of the stage 12 Respectively. The semiconductor element 2 functions as an example of a member to be mounted. The suction nozzle 5 functions as an example of the suction holding member. The controller 51 includes a head lift mechanism 40, a heater 6, a vacuum pump 41, a head moving mechanism 52, an image processor 42 and a position calculator 50 And controls the driving.

The semiconductor element 2 is a thin plate-shaped member made of an opaque material such as silicon, gallium nitride, or silicon carbide. An identification mark 3 is formed on one surface (the upper surface in Fig. 1) of the semiconductor element 2 and an epoxy resin, an acrylic resin, and an acrylic resin are formed on the other surface (lower surface in Fig. Or an adhesive layer 4 composed of a thermosetting adhesive such as a silicone resin, a thermoplastic adhesive, a conductive adhesive, or a cream solder is formed. The adhesive layer 4 is an example of the bonding layer.

The substrate 13 is made of, for example, silicon, glass, stainless steel, or a resin substrate, and has a circular or square shape in plan view.

The mounting head 1 includes a suction nozzle 5 disposed at the bottom and made of a transparent material and a rectangular plate heater provided adjacent to the upper side of the suction nozzle 5 and functioning as an example of the first heating device And a vacuum chamber 7 surrounded by a rectangular plate-like transparent plate 8 disposed above the heater 6 and arranged parallel to the heater 6 and the suction nozzle 5. The vacuum chamber 7 is a rectangular plate- The vacuum chamber 7 is formed inside the lower portion of the mounting head 1. An upper part of the inside of the mounting head 1 is provided with a base plate 9 having a rectangular plate shape in which a plurality of optical components 10 are fixed to one plane 9a. The vacuum chamber 7 is connected to the vacuum pump 41 and has a function of vacuum adsorbing the semiconductor element 2. [ The adsorption nozzle 5 is made of, for example, sapphire, quartz, glass, heat-resistant plastic or the like. The heater 6 may be formed, for example, on the surface (lower surface) of the thin film portion 6a of indium tin oxide having excellent light transmittance. With this structure, visible light can be transmitted even when the thin film portion 6a is energized and heated. As the optical component 10, for example, a mirror or a prism may be used.

On the side surface of the mounting head 1, a window portion 14 that transmits light at the same height as the optical component 10 is provided. It is also possible to mount the recognition camera 1 in the direction which can recognize the image subjected to the optical path conversion by the optical component 10 via the window portion 14 at the same height as the optical component 10, (11) are provided. The recognition camera 11 is connected to an image processing apparatus 42 and the recognition camera 11 and the image processing apparatus 42 function as an example of the image recognition apparatus. The position of the recognition mark 3 can be read out from the image information from the recognition camera 11 by performing known image processing such as background difference method in the image processing device 42. [ The image of the recognition mark 3 of the semiconductor element 2 that has been absorbed passes through the absorption nozzle 5, the heater 6 and the transparent plate 8, From the face to the image sensing plane of the recognition camera 11 and is taken in by the recognition camera 11 to read the position information of the recognition mark 3 from the image processing device 42. [ Here, the relative coordinates of the semiconductor element 2 with respect to the coordinates of the center of gravity of the suction nozzle 5 is referred to as a positional shift amount from the positional information of the two recognition marks 3 on the semiconductor element 2, Is calculated by the position calculating section (50) connected to the processing device (42). The optical path from the semiconductor element 2 to the recognition camera 11 is divided into at least two optical elements 10 using a plurality of optical components 10 so as to recognize the two recognition marks 3 of the semiconductor element 2. [ Branch.

Next, the configuration of the optical component 10 and the base 9 inside the mounting head 1 will be described. If the optical component 10 is mounted on a different base 9 for each optical component 10, it is necessary to adjust the optical components 10 one by one to a desired optical path length. When the heater 6 is heated, the optical component 10 is heated by the radiation heat of the heater 6 via the transparent plate 8. [ As a result, the heat is transferred to the base 9 to which the optical component 10 is attached, and the distances between the base 9 and the optical component 10 are irregularly changed due to the respective thermal expansion, The position adjustment becomes difficult. It is therefore necessary to fix the plurality of optical components 10 (10a to 10f) to one plane 9a of the same one base 9 so as to control the optical path length to a temperature. The amount of change in the optical path lengths of the two optical paths L1 and L2 in the planar direction due to the thermal expansion becomes equal to the amount of thermal expansion of the base 9, so that the control of the optical path length becomes easy.

2 is a schematic plan view showing the configuration of the first optical component 10a to the sixth optical component 10f as an example of the optical component 10 inside the mounting head according to the first embodiment of the present invention. 2 shows the first optical component 10a and the base 9 which are optically transduced from the recognition camera 11 in the direction perpendicular to the base 9 in one plane 9a parallel to the base 9. In this case, The second optical component 10b that performs optical path conversion in a direction parallel to the plane 9a and the first optical path L1 to reach the third optical component 10c are arranged. A fourth optical component 10d that performs optical path conversion in a direction perpendicular to the base 9 and a fifth optical component 10e that performs optical path conversion in a direction parallel to the plane 9a of the base 9, And the second optical path L2 to reach the sixth optical element 10f. With this arrangement, the image information of the plurality of recognition marks 3a and 3b can be simultaneously delivered to the recognition camera 11 by these optical components 10a to 10f. In other words, the first and second optical paths L1 and L2 are connected to the first optical path 10a through the third optical component 10c and the second optical component 10b from the recognition camera 11 to the first optical component 10a And a second optical path L2 reaching the fourth optical component 10d from the recognition camera 11 via the sixth optical component 10f and the fifth optical component 10e. An image in the vicinity of the two identification marks 3 (not shown in Fig. 2) of the semiconductor element 2, which has been subjected to the optical path conversion by the first optical component 10a and the fourth optical component 10d, ). Here, for each of the recognition marks 3, from the recognition camera 11 to the first optical component 10a through the third optical component 10c and the second optical component 10b so that the focus adjustment is unnecessary And the distance from the recognition camera 11 to the second optical path L2 from the sixth optical component 10f to the fourth optical component 10d via the fifth optical component 10e are equal to each other . Here, since the base 9 and the suction nozzle 5 are in a parallel positional relationship, the distance between them is the same and only the optical paths L1 and L2 in the planar direction are the same.

3 is a plan view of the semiconductor element 2 in the first embodiment of the present invention. 3, a plurality of recognition marks 3, referred to as a first recognition mark 3a and a second recognition mark 3b, are formed on the diagonal line of the semiconductor element 2, For example, at a point symmetric with respect to the middle point. However, the position of the recognition mark 3 is not limited to this. At least two portions may be formed at arbitrary positions of the semiconductor element 2. [

4 is a conceptual diagram showing an observation image of the semiconductor element 2 by the recognition camera 11 according to the first embodiment of the present invention. When the semiconductor element 2 shown in Fig. 3 is observed by the recognition camera 11 while being adsorbed by the mounting head 1, the semiconductor element 2 reflected by the plurality of optical components 10 inside the mounting head 1 An enlarged image in the vicinity of the first recognition mark 3a and the second recognition mark 3b is observed in one screen of the image of the recognition mark 3 of the image recognition section 2, Is obtained. The positional coordinates of the semiconductor element 2 in the plane direction are obtained by the position calculating section 42 by obtaining the position coordinates of the first recognition mark 3a and the second recognition mark 3b obtained from the image by the image processing device 42, (50). Based on the position coordinates, the control device 51 drives and controls the head elevation drive mechanism 40 and the head movement mechanism 52, respectively, and controls the alignment of the substrate 13 with the semiconductor element 2 So that the semiconductor device can be manufactured.

According to this method, even if the camera of low magnification is not used, for example, two first and second recognition marks 3a and 3b in the diagonal direction can be observed simultaneously in one field of view of the recognition camera 11, The resolution of the recognition marks 3a and 3b can be increased and the mounting accuracy can be greatly improved. The visual field size in the vicinity of the recognition marks 3a and 3b may be suppressed within the range of the deviation of the maximum positional deviation when it is sucked by the suction nozzle 5, For example, in the case of mounting a large-sized semiconductor element 2 having an outer dimension of 10 mm x 10 mm of the semiconductor element 2, the visual field size is not 10 mm x 10 mm, , And 50 to 500 mu m. According to the first embodiment, for example, the resolution of the recognition marks 3a and 3b can be increased to 0.1 to 2 占 퐉 near one pixel.

5 is a schematic cross-sectional view showing a configuration of an apparatus for manufacturing a semiconductor device according to the first embodiment of the present invention. A transfer stage 15 for mounting a semiconductor element 2 (not shown) and a stage 12 for mounting a substrate 13 (not shown) are provided at a certain distance from each other. The mounting head 1 includes a head moving mechanism 52 in the horizontal direction and a head elevating driving mechanism 40 in the vertical direction for enabling the reciprocating movement between the transfer stage 15 and the stage 12, (51), respectively. The recognition camera 11 is fixed above the stage 12. In addition, the recognition camera 11 may be fixed to the mounting head 1. When the mounting head 1 is fixed to the mounting head 1 in this way, the recognition camera 11 can perform the recognition operation during the movement operation of the mounting head 1, so that the production time can be shortened.

6A to 6D are schematic cross-sectional views sequentially showing a method of manufacturing a semiconductor device according to the first embodiment of the present invention. These series of operations are controlled by the control device 51. [

First, as shown in Fig. 6A, under the control of the control device 51, the mounting head 1 is brought close to the semiconductor element 2 mounted on the transfer stage 15 by the head elevation drive mechanism 40 The recognizing camera 53 recognizes the recognition mark 3 formed on the semiconductor element 2. Then, Then, after the position information of the mounting head 1 is read out from the control device 51, the recognition information of the recognition mark 3 (the positional information of the relative coordinates of the recognition mark 3) The mounting head 1 is moved in X, Y, and Y directions by the drive control of the head moving mechanism 52 and the head elevation drive mechanism 40 based on the position information (position information of the absolute coordinates of the mounting head 1) the mounting head 1 is brought into contact with the semiconductor element 2, In the case where the transfer stage 15 is provided with an alignment mechanism such as a concave shape in which each semiconductor element 2 can be stored, the suction recognition camera 53 may not be used. Here, in order to shorten the mounting time, the mounting head 1 may be heated by the heater 6 in advance.

6B, under the control of the control device 51, the semiconductor element 2 is sucked and fixed to the suction nozzle 5 of the mounting head 1 by a vacuum suction operation. When there is a gap between the semiconductor element 2 and the suction nozzle 5 at the time of performing the vacuum suction operation, the semiconductor element 2 pulled by the negative pressure and floated in the air flows in the flow of ambient air Or the inclination angle in the air of the semiconductor element 2, and a positional deviation occurs between the center coordinate of the suction hole 5a and the center coordinate of the semiconductor element 2. [ Thereafter, the mounting head 1 is pulled up by the head elevating drive mechanism 40.

6A to 6B, under the control of the control device 51, a plurality of recognition marks of the substrate 13 mounted on the stage 12 are read by a recognition camera (not shown) for the substrate And calculates the position coordinate of the substrate 13 on the basis of the recognition result by the position coordinate calculation unit for the substrate and inputs it to the control device 51 as the substrate position information. 6C, under the control of the control device 51, the mounting head 1 is moved in the horizontal direction up to the stop position on the stage 12 by the head moving mechanism 52 . Then, under the control of the control device 51, the recognition camera 11 and the image processing device 42, which are supported by the pillars 54 at the stop position on the stage 12, The two recognition marks 3a and 3b on the semiconductor element 2 are recognized at the same time and the relative coordinates of the semiconductor element 2 with respect to the substrate 13 are detected by the position calculating section 50 .

It is also possible to provide the recognition camera 11 at a position in the vicinity of the stage 12 at the lower part of the support 54 and not at the position above the support 54 shown in Fig. The mounting head 1 may be temporarily lowered to the position of the recognition camera 11 in the vicinity of the stage 12 to recognize the image and then lowered and mounted. According to such a configuration, since the recognition camera 11 can recognize the image at a position close to the stage 12, it is possible to reduce the influence of the deviation due to the vibration during the movement of the mounting head 1 at the time of image recognition.

6D, either one or both of the mounting head 1 and the stage 12 may be mounted on the head 50, based on the calculation result of the position calculating section 50, under the control of the controller 51. Then, And moved by the moving mechanism 52 in the X, Y, and θ directions so that the semiconductor element 2 is pressed down on the substrate 13 while being lowered by the head elevation drive mechanism 40. The heat of the heater 6 is transferred to the adhesive layer 4 on the back surface of the semiconductor element 2 on the suction nozzle 5 of the mounting head 1 and the adhesive layer 4 softened by heat is transferred to the substrate 13 ).

According to this method, two recognition marks 3a and 3b are detected by one recognition camera 11 and an image processing apparatus (not shown) while the one recognition camera 11 is fixed to the side of the stage 12 by the pillars 54 It is unnecessary to consider the difference in accuracy of the plurality of cameras and the difference in the recognition accuracy caused by the movement of the camera or the mounting head 1, and it is also possible to mount them on the basis of the position information immediately before mounting Therefore, the semiconductor device can be manufactured with high accuracy.

In order to sufficiently secure the adhesive force of the adhesive layer 4, the semiconductor element 2 adsorbed by the suction nozzle 5 must be heated to a high temperature. When the adhesive layer 4 is made of a thermoplastic material, it may be raised to a softening point or more of the thermoplastic material. When the adhesive layer 4 is made of a thermally hardenable material, it may be raised to a temperature higher than the curing start temperature. On the other hand, the inside of the mounting head, in particular, the vicinity of the optical component 10, is exposed to a high temperature, and air currents such as azalea are caused to shake, the image is disturbed and the image can not be recognized, ) In the surface of the substrate. For this reason, it is necessary to keep the temperature of the base 9 to which the optical component 10 is fixed at a temperature lower than that of the semiconductor element 2. For example, it is preferable that the semiconductor element 2 is maintained at 150 to 200 DEG C and the optical component 10 is maintained at 80 DEG C or less.

However, when the distances between the two recognition marks 3a and 3b of the semiconductor element 2 are far apart and the coefficient of linear expansion of the base 9 and the semiconductor element 2 are equal to each other, The thermal expansion amount of the distance between the two recognition marks 3a and 3b becomes larger than the thermal expansion amount of the distance between the plurality of optical components 10 (10a to 10f) corresponding to the identification marks 3a and 3b on the base 9 of low temperature . Therefore, there is a case where one or both of the two recognition marks 3a and 3b of the semiconductor element 2 deviate from the field of view of the recognition camera 11. In order to prevent such a problem, it is necessary to make the thermal expansion amounts of the semiconductor element 2 having the temperature difference and the base 9 equal. Assuming that the linear expansion coefficients of the semiconductor element 2 and the base 9 are α 1 and α 2 and the temperatures of the semiconductor element 2 and the base 9 are T 1 and T 2 and the room temperature is RT,

Figure 112016124163974-pat00001

The coefficient of linear expansion of the semiconductor element 2 and the base 9 may be set. Since α 2 × (T 2 -RT) / {α 1 × (T 1 -RT)} If this is less than 0.5, the amount of thermal expansion of the semiconductor element (2) much higher than the thermal expansion amount of the base (9), from the field of view Escape. Since the thermal expansion amount of the base 9 greatly exceeds the thermal expansion amount of the semiconductor element 2 when? 2 × (T 2 -RT) / {α 1 × (T 1 -RT)}> 2.0, .

For example, when the semiconductor element 2 and the base 9 are at 150 占 폚 and 40 to 50 占 폚, the room temperature is 30 占 폚, and the linear expansion coefficient of the semiconductor element 2 is 3 ppm, For example, stainless steel, iron, copper, aluminum, or a heat-resistant plastic resin may be used as the base 9, and a material having a coefficient of linear expansion of 18 to 36 ppm may be selected. When the semiconductor element 2 is heated to a high temperature, the increase of the distance between the identification marks 3a and 3b can be followed by the increase in the distance between the low temperature optical components 10. Therefore, both recognition marks 3a and 3b can be observed without departing from the visual field. Taking the configuration of the mounting head 1 as described above makes it possible to recognize the two recognition marks 3a and 3b because the visual field can not be easily deviated even if the temperature is raised.

With the method of the first embodiment, as an example, a semiconductor element having an external dimension of 10 mm x 10 mm was mounted on a substrate made of a silicon wafer having a diameter of 300 mm. SUS304 having a linear expansion coefficient of 17 ppm was used as the base 9, and the temperature of the semiconductor element 2 was set at 150 占 폚. The temperatures of the optical component 10 and the base 9 were 40 to 50 占 폚. The two identification marks provided in the vicinity of the apex of the semiconductor element 2 could be mounted without deviating from the field of view so that the mounting time was 0.8 seconds and the mounting accuracy was +/- 3 占 퐉.

As described above, according to the first embodiment, the image information of the first recognition mark 3a and the second recognition mark 3b is stored in one screen of the recognizing camera 11 into the plurality of optical components 10 (10a- And the position coordinates of the first recognition mark 3a and the second recognition mark 3b are respectively obtained by the image processing device 42 so that the positional coordinates in the plane direction of the semiconductor element 2 are Can be calculated by the position calculating unit 50. [ As a result, the two first and second recognition marks 3a and 3b can be observed simultaneously in one field of view of the recognition camera 11 without using a low-magnification camera, and the resolution of the recognition marks 3a and 3b And even if the semiconductor device has a large external shape such as 10 mm x 10 mm, it can be mounted on the substrate 13 in a very short time with very high precision. In addition, since the plurality of optical components 10 (10a to 10f) are all fixed on the same plane 9a on one base 9, the respective optical paths of the two optical paths L1 and L2 in the planar direction due to thermal expansion The amount of change in length becomes equal to the amount of thermal expansion of the base 9, and the control of the optical path length by temperature becomes easy.

(Second Embodiment)

In the first embodiment, the mounting head 1 has the heater 6 formed with the film having excellent light transmittance. However, the present invention is not limited to this. The heater 6 may be a heater provided with a light transmitting portion locally in order to increase the heat capacity of the light transmitting film so as to be heated to a higher temperature.

7 is a schematic sectional view showing a semiconductor device manufacturing apparatus according to a second embodiment of the present invention. 1 is different in that the mounting head 1 has a heater 31 provided with a light transmitting portion 31a locally. The heater 31 may be provided with an image sensor such that the image of the vicinity of the recognition mark 3 of the semiconductor element 2 attracted to the suction nozzle 5 can be picked up by the recognition camera 11 via the optical component 10. A light transmitting portion 31a which is disposed inside the light transmitting member 31b such as a glass and transmits at least the area near the recognition mark 3 is provided. The heater 31 is constituted by a planar heater as an example, and a plurality of through holes for passing through the optical path are provided at arbitrary positions of the planar heater as the local light transmitting portions 31a. The method of forming the local light transmitting portions 31a is not limited to this. It is also possible to form wiring for electric heating heating consisting of a conductive paste or a conductive film or to insert a line heater so as to avoid the light transmitting portion 31a. According to this method, for example, the temperature of the semiconductor element 2 can be raised up to 400 DEG C, and as a further example of the bonding layer, bonding can be performed using a high melting point material such as gold tin.

(Third Embodiment)

The second heater 32 may be provided on the upper surface of the base 9 so as to contact the base 9 so as to control the thermal expansion amount more precisely. The second heater 32 functions as an example of the second heating device. 8 is a schematic cross-sectional view showing a semiconductor device manufacturing apparatus according to a third embodiment of the present invention. And a second heater 32 provided with a temperature control function so as to contact the base 9 is provided. Since the temperature of the base 9 can be set to a predetermined temperature by the second heater 32 by controlling the control device 51, the amount of thermal expansion of the base 9 can be controlled, Even if the semiconductor device has a large external shape such as 10 mm x 10 mm, it can be recognized by the recognition camera 11 without deviating from the visual field, and the semiconductor device can be mounted with high accuracy.

By way of the method according to the third embodiment of the present invention, the semiconductor element 2 having an external dimension of 15 mm x 15 mm is mounted on a glass substrate having an external dimension of 250 mm x 300 mm, for example. The linear expansion coefficient of the semiconductor element 2 is 3 ppm. SUS304 having a linear expansion coefficient of 17 ppm was used for the base 9. The temperature of the semiconductor element 2 was set at 200 占 폚 and the temperature of the base 9 was set at 56 占 폚 based on the equation (1). The two recognition marks 3 provided in the vicinity of the vertex of the semiconductor element 2 can be recognized simultaneously without departing from the visual field, and the mounting time is 1.0 second, and the mounting accuracy is +/- 2 占 퐉.

As described above, according to the third embodiment of the present invention, even a semiconductor device having a larger external shape can be mounted on a substrate with a very high accuracy in a short time. According to the third embodiment of the present invention, since the stage 12 can be mounted without heating, even when a plurality of semiconductor elements are mounted on a large substrate, the heating time of all the semiconductor elements can be kept constant There is an effect that production with less quality deviation is possible.

In addition, by appropriately combining any of the above-described embodiments or modifications, any one of the effects can be obtained. It should be understood that the present invention is not limited to these embodiments, and various combinations of the embodiments and embodiments may be possible.

(Industrial availability)

An apparatus for manufacturing a semiconductor device according to the present invention has the effect of mounting a semiconductor element on a substrate with high accuracy and in a short time and is useful for a semiconductor device for use in mounting a large-sized semiconductor element such as a high- Especially for the production device of the < RTI ID = 0.0 >

1: Mounting head
2: Semiconductor device
3, 3a, 3b: recognition mark
4: Adhesive layer
5: Adsorption nozzle
5a: suction hole
6, 31, 32: heater
7: Vacuum room
8: Transparent plate
9: Base
10, 10a, 10b, 10c, 10d, 10e, and 10f:
11: Recognition camera
12: stage
13: substrate
14: window
15: Transfer stage
31a: light transmitting portion
31b:
40: Head lifting and driving mechanism
41: Vacuum pump
42: Image processing device
50:
51: Control device
52: Head moving mechanism
53: A recognition camera for absorption
54: holding

Claims (4)

There is provided a manufacturing apparatus for a semiconductor device which mounts a mounted member on which a plurality of identification marks for positioning are formed, on a substrate via a bonding layer using a mounting head,
A suction holding member which comes into contact with the surface on which the recognition mark is formed and sucks and holds the member to be mounted;
A first heating device that heats the mounted member held by the suction holding member,
An image recognition device for recognizing the recognition mark of the mounted member at the same time and acquiring image recognition information on the outside of the mounting head;
A plurality of optical components for simultaneously guiding image information of the plurality of recognition marks of the mounted member held and held to the image recognition device on the inside of the mounting head,
And a position calculating section for calculating the position of the mounted member based on the image recognition information acquired by the image recognition apparatus,
Respectively,
The plurality of optical components are all fixed on the same plane on one base,
Wherein the base and the suction holding member are in a parallel positional relationship
A manufacturing apparatus for a semiconductor device.
The method according to claim 1,
Wherein the coefficient of linear expansion of the member to be mounted is α 1 , the coefficient of linear expansion of the base is α 2 , the temperature of the member to be mounted is T 1 , the temperature of the base is T 2 , if,
0.5?? 2 (T 2 -RT) / {? 1 x (T 1 -RT)}? 2.0
Wherein the semiconductor device is a semiconductor device.
The method according to claim 1,
And a second heating device for heating the base.
3. The method of claim 2,
And a second heating device for heating the base.
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