KR101856149B1 - Aqueous clean solution, method for mamufacturing a semiconductor device using the same, and semiconductor device - Google Patents

Aqueous clean solution, method for mamufacturing a semiconductor device using the same, and semiconductor device Download PDF

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KR101856149B1
KR101856149B1 KR1020160042225A KR20160042225A KR101856149B1 KR 101856149 B1 KR101856149 B1 KR 101856149B1 KR 1020160042225 A KR1020160042225 A KR 1020160042225A KR 20160042225 A KR20160042225 A KR 20160042225A KR 101856149 B1 KR101856149 B1 KR 101856149B1
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cleaning
weight
selected
cleaning liquid
group consisting
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KR20170114744A (en
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김태영
김문창
최윤석
이하우
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케이피엑스케미칼 주식회사
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    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C11D11/0005Special cleaning and washing methods
    • C11D11/0011Special cleaning and washing methods characterised by the objects to be cleaned
    • C11D11/0023"Hard" surfaces
    • C11D11/0047Electronic devices, e.g. PCBs, semiconductors
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C11D11/0094Process for making liquid detergent compositions, e.g. slurries, pastes, gels
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50Solvents
    • C11D7/5004Organic solvents
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Abstract

The present invention relates to a cleaning liquid composition which does not contain quaternary ammonium hydroxide and which contains 1 to 15% by weight of an alkylamino alcohol, 0.1 to 5% by weight of a mofoline, and a residual amount of water, and a cleaning liquid composition comprising the cleaning liquid composition A manufacturing method thereof, and a semiconductor device.

Description

TECHNICAL FIELD [0001] The present invention relates to a cleaning liquid composition, and a method of manufacturing a semiconductor device using the cleaning liquid composition and a semiconductor device,

The present invention relates to a cleaning liquid composition used in a manufacturing process of a semiconductor device, a method of manufacturing a semiconductor device using the cleaning liquid composition, and a semiconductor device.

There are problems such as RC delay and electromigration due to high integration of devices in a semiconductor process. In order to solve this problem, a metal wiring forming material is replaced by aluminum (Al) to copper (Cu).

A damascene process is used to form the copper interconnects and a slurry composed of an abrasive, an oxidizing agent, a complexing agent and a corrosion inhibitor is used to remove remaining or over-deposited copper film after deposition, The substrate is being planarized through a chemical-mechanical polishing (CMP) process at a rotational speed.

Impurities such as organic residues and slurry particles remain on the surface of the substrate after the chemical mechanical polishing (CMP) process, which can cause serious problems such as poor pattern bonding. Therefore, Post CMP cleaning process is essential for removing impurities after these processes and proceeding the subsequent process.

International application number " PCT / US2001 / 018402 " as a conventional cleaning fluid composition used in a post CMP cleaning process includes cleaning with a quaternary ammonium hydroxide such as tetraalkylammonium hydroxide, organic amine and water, ≪ / RTI >

In addition, international application number " PCT / US2013 / 031299 " describes a cleaning composition comprising TMAH, amine, azole corrosion inhibitor, reducing agent and at least one solvent.

In addition, international application number " PCT / US2013 / 041634 " describes a cleaning composition consisting of quaternary base, amine, corrosion inhibitor and at least one solvent.

However, all of these conventional post CMP cleaning products include tetramethylammonium hydroxide (TMAH), which is reported to cause dyspnea and muscle paralysis. Therefore, development of a product that does not include TMAH is required.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide a cleaning composition which does not contain quaternary ammonium hydroxide such as tetraalkylammonium hydroxide, , Which is stable to galvanic corrosion between a metal and a barrier metal, has excellent corrosion resistance, and does not change pH or change zeta potential with dilution.

It is another object of the present invention to provide a method of manufacturing a semiconductor device manufactured using the cleaning composition.

The present invention also provides a semiconductor device manufactured by the above manufacturing method.

The present invention does not include quaternary ammonium hydroxide,

1 to 15% by weight of alkylamino alcohol, 0.1 to 5% by weight of morpholine, and the balance water.

In addition,

And a step of cleaning the substrate subjected to the chemical mechanical polishing (CMP) process with the cleaning liquid composition described above.

In addition,

A semiconductor device manufactured by the above manufacturing method is provided.

The cleaning liquid composition according to the present invention does not use tetramethylammonium hydroxide (TMAH) defined as a harmful substance, so it is safe for a human body, effectively cleans organic matters and particles, , TaN, TiN, Low-K, Co) (including galvanic corrosion between metal and barrier metal).

In addition, it can be used in a wide range in which the change in pH and the change in zeta potential according to dilution is not large, and the yield of semiconductor device manufacture is improved through prevention of re-adsorption of particles.

FIG. 1 is an image of AFM roughness (10 × 10 μm) measured before and after 30 min treatment of a Cu specimen using the cleaning liquid composition of Example 9 of the present invention.
FIG. 2 is an image of AFM roughness (10 × 10 μm) measured before and after 30 min of Cu specimen using the cleaning composition of Comparative Example 5 in which TMAH was mixed.
FIG. 3 is an image of particles measured using a defect measuring apparatus for a wafer cleaned in Example 8 of the present invention. FIG.
4 is an FT-IR measurement image of the cleaning liquid composition of Example 8 of the present invention before and after cleaning the organic material.

The present invention relates to a cleaning composition which does not contain quaternary ammonium hydroxide, but which comprises from 1 to 15% by weight of alkylamino alcohol, from 0.1 to 5% by weight of mofoline, and a balance of water.

The cleaning composition may preferably be used particularly for cleaning after a chemical-mechanical polishing (CMP) process.

As the quaternary ammonium hydroxide, tetramethylammonium hydroxide (TMAH) and the like may be exemplified. These substances are not included in the detergent composition of the present invention because they are harmful to human body. The detergent composition of the present invention is characterized in that it exhibits excellent cleaning characteristics without containing such harmful components.

The detergent composition of the present invention may further include at least one selected from 0.05 to 5 wt% of organic solvent and 0.1 to 5 wt% of corrosion inhibitor.

In the following, each component constituting the detergent composition will be described in detail.

(a) Alkyl amino alcohol

The alkylamino alcohol is included in the present invention as a main component for removing the organics and particles of the present invention. The alkylamino alcohol may be used in an amount of 1 to 15% by weight, more preferably 5 to 11% by weight. If the alkyl amino alcohol is contained in an amount of less than 1% by weight, the detergency against organic substances and particles becomes too weak, and if it exceeds 15% by weight, the corrosion power becomes too strong.

As the alkyl amino alcohol, two or more kinds of alkyl amino alcohols selected from the group consisting of secondary alkyl amino alcohols and tertiary alkyl amino alcohols can be preferably used. It is preferable that the primary alkyl amino alcohol is not used because it has too strong a corrosive power.

When two or more kinds of alkylamino alcohols are used as described above, they are preferable because they can maintain a constant alkaline strength and provide stability of washing and corrosion.

It is more preferable that the alkylamino alcohol includes at least one kind of secondary alkyl amino alcohol and at least one tertiary alkyl amino alcohol. This is because secondary alkyl amino alcohols are excellent in cleansing properties, whereas when they are used in too much amounts, they are not desirable because of increased corrosiveness. It is therefore preferred that the secondary alkyl amino alcohol be used in combination with tertiary alkyl amino alcohols which are both excellent in cleansing and corrosion inhibition.

The weight ratio of the secondary alkyl amino alcohol to the tertiary alkyl amino alcohol may be 1: 5 to 5: 1, more preferably 4: 1 to 2: 1.

As the secondary alkyl amino alcohol, butyl ethanol amine, methyl ethanol amine, diethanol amine and the like can be used. In particular, methyl ethanol amine is preferably used.

Examples of the tertiary alkylamino alcohol include butyldiethanolamine, dibutylethanolamine, diethylethanolamine, methyldiethanolamine, methyldiisopropanolamine, triethanolamine, and the like. Particularly, triethanolamine, methyldiisopropyl Phenolamine can be preferably used.

(b) Morpholine

In the cleaning liquid composition of the present invention, morpholine functions to purify the pH adjuster function and the bubble of the chemical liquid. The morpholine may be contained in an amount of 0.1 to 5% by weight, more preferably 0.5 to 3% by weight. If the content of mofoline is less than 0.1% by weight, the adjustment of the pH can be difficult and the problem of puffing may occur. If the content exceeds 5% by weight, uneconomical problems may occur.

Examples of the morpholine include N-methylmorpholine, morpholine, N-acetylmorpholine, 4- (2-hydroxyethyl) morpholine, 2,2'-diphosphoronodiethylether, , And N-methylmorpholine, morpholine, N-formylmorpholine and the like can be more preferably used

(c) Organic solvent

The organic solvent plays a role of expelling bubbles generated in the process. The organic solvent may be contained in an amount of 0.05 to 5% by weight, more preferably 0.1 to 0.5% by weight. If the amount of the organic solvent is less than 0.05% by weight, the performance of the bubble vesicle may be deteriorated. If the amount of the organic solvent is more than 5% by weight, uneconomical problems may occur.

Examples of the organic solvent include diethylene glycol monoethyl ether, triethylene glycol butyl methyl ether, triethylene glycol ethyl ether, and the like, but are not limited thereto.

(d) Corrosion inhibitor

As the corrosion inhibitor, N, N-diethylhydroxylamine, ascorbic acid, pyrazole, sorbitol and the like can be used. The corrosion inhibitor may be contained in an amount of 0.1 to 5% by weight, more preferably 0.1 to 2% by weight. When the corrosion inhibitor is contained in an amount of less than 0.1% by weight, corrosion resistance may be deteriorated. If the corrosion inhibitor is added in an amount exceeding 5% by weight, deposition on the surface of the membrane may occur.

(e) Water

As the water, deionized water may be preferably used, and may be included as a residual amount such that the total weight of the composition including the content of the components becomes 100% by weight.

The detergent composition of the present invention may further comprise additives commonly used in this field in addition to the above components.

In addition,

(CMP) process for the substrate, followed by cleaning the substrate with the cleaning composition of claim 1. The present invention also relates to a method of manufacturing a semiconductor device.

The present invention also relates to a semiconductor device manufactured by the above manufacturing method.

Hereinafter, the present invention will be described in more detail by way of examples. However, the following examples are intended to further illustrate the present invention, and the scope of the present invention is not limited by the following examples. The following examples can be appropriately modified and changed by those skilled in the art within the scope of the present invention.

Example  1 to 11 and Comparative Example  1 to 6: Preparation of cleaning liquid composition

The cleaning liquid compositions of Examples 1 to 11 and Comparative Examples 1 to 6 were prepared by mixing the components listed in Tables 1 and 2 at the composition ratios.

Figure 112016033266348-pat00001

week)

BEA: Buthylethanolamine

NMEA: N-methylethanolamine

MDIA: Methyldiisopropanolamime

TEA: Triethanolamine

DEA: Diethanolamine

NMM: N-methylmorpholine

MP: Morpholine

NFM: N-formylmorpholine

EDG: Diethylene glycol monoethyl ether

MBTG: Triethyleneglycol butyl methyl ether

ETG: Triethylene glycol ethyl ether

DEHA: Diethylhydroxylamine

AC: Ascorbicacid

PRZ: Pyrazole

Test Example  1: Evaluation of cleaning performance

(1) Particle cleaning performance

Cu and T-oxide wafers were subjected to a CMP process using an ILD slurry and a Cu slurry, and then the number of particles before cleaning was measured.

The wafers were cleaned with the cleaning liquid compositions of Examples 1 to 8 and Comparative Examples 1 to 5 of Table 1 using GnP-Brochure-Cleaner 812L equipment, and then the cleaning performance was evaluated. The evaluation results are shown in Table 2 below. The cleaning results in Table 2 below show the relative comparison results. 3 shows an image obtained by measuring a particle using a Defect measurement equipment for a wafer cleaned in Example 8. FIG.

(2) Organic matter removal performance

In the case of benzotriazole contained in CMP slurry, it forms a very strong complex with Cu and makes subsequent process difficult. Therefore, the removal performance of the cleaning liquid compositions of Examples 1 to 8 and Comparative Examples 1 to 5 in Table 1 for benzotriazole was evaluated as follows.

In order to remove the oxide film formed on the Cu specimen, an aqueous acetic acid solution was dipped for 30 seconds and then DIW rinsing was performed for 60 seconds. The surface-treated Cu specimens were dipped in a benzotriazole aqueous solution for 60 seconds, treated with a DIW rinse for 30 seconds, and the benzotriazole formed on the Cu surface was measured using FT-IR equipment.

The specimens contaminated with benzotriazole were each dipped in the cleaning composition compositions of Examples 1 to 8 and Comparative Examples 1 to 5 for 60 seconds, rinsed with DIW, and dried with N 2 to determine the removal of benzotriazole by FT-IR And the results are shown in Table 3 below. FIG. 4 shows FT-IR measurement images before and after cleaning the organic material with the cleaning liquid composition of Example 8. FIG.

Remove Particle
(Relative result)
Organic matter removal
Example 1 6 Example 2 4 Example 3 7 Example 4 One Example 5 5 Example 6 8 Example 7 2 Example 8 3 Comparative Example 1 11 Comparative Example 2 13 Comparative Example 3 9 Comparative Example 4 12 Comparative Example 5 10 X

<Evaluation Criteria>

?: Completely removed,?: Not more than 0.0005%,?: Not more than 0.001%, X: not more than 0.001% Remaining

As can be seen in Table 1, the cleaning liquid compositions of the present invention (Examples 1 to 8) showed better effects on particle removal and organic matter removal than the cleaning liquid compositions of Comparative Examples 1 to 5 containing TMAH.

Test Example  2: Corrosion performance evaluation

(1) Roughness measurement

Corrosion inhibiting performance of the cleaning liquid composition of the present invention was evaluated through evaluation of corrosion performance of the cleaning liquid compositions of Examples 8 to 11 and Comparative Example 5.

The Cu specimens deposited at a thickness of 2,000 ANGSTROM were dipped in the cleaning liquid compositions of Examples 8 to 11 and the cleaning liquid compositions of Comparative Example 5 for 1 min, 10 min, 20 min and 30 min, rinsed with DIW, and AFM roughness was measured. The results are shown in Table 3 below. FIG. 1 shows the result of dipping the Cu specimen in Example 8 for 30 min, and FIG. 2 shows the results of dipping the Cu specimen in Comparative Example 5 for 30 min.

AFM Roughness (Rq value) 0min 1 min 10 min 30min Example 8 1.383 1.873 1.891 1.936 Example 9 1.317 1.618 1.784 1.794 Example 10 1.342 1.827 1.873 2.069 Example 11 1.406 1.981 2.081 2.633 Comparative Example 5 1.343 1.887 2.122 3.943  * Rq - Square average roughness

As can be seen from the above Table 3, it can be seen that the cleaning liquid compositions of the present invention (Examples 8 to 11) have corrosion inhibition performance equal to or greater than that of the cleaning liquid composition of Comparative Example 5 containing TMAH.

(2) Etch rate measurement

To measure the etch rate of the cleaning liquid compositions of Examples 8 to 11 and the cleaning liquid composition of Comparative Example 5, each metal specimen was dipped at 25 ° C for 30 minutes, rinsed with DIW, And the results are shown in Table 3 below.

The etch rate changes of the cleaning composition of Example 8 and the cleaning composition of Comparative Example 5 (including TMAH) over time were measured, and the results are shown in Table 4 below.

Example 8 Example 9 Example 10 Comparative Example 5 Etch rate (Å / min) Cu 0.6 0.48 0.64 0.67 TEOS 0.17 0.12 0.21 0.15 Ti 0.19 0.1 0.16 0.24 Ta 0.26 0.21 0.31 0.53 time 3hr 6hr 9hr 12hr 15hr Example 8 Etch Thick 50.13 416.82 854.16 976.12 1043.6 Example 8 Etch Rate 0.28 1.16 1.58 1.36 1.16 Comparative Example 5 Etch Thick 78 734.37 1036.82 1192.43 1610.19 Comparative Example 5 Etch Rate 0.43 2.04 1.92 1.66 1.79

As can be seen in Table 4 above, the cleaning composition compositions of the present invention (Examples 8-10) exhibited lower etch rates than the cleaning composition compositions of Comparative Example 5 containing TMAH. Also, at the etch rate according to time, the cleaning composition of the present invention (Example 9) showed lower etch rate than the cleaning composition of Comparative Example 5 containing TMAH.

Test Example  3: Evaluation of pH and Zeta potential change by dilution ratio

To evaluate the operating range, we measured the pH change and Zeta potential according to dilution. That is, in order to confirm whether the pH of the cleaning liquid composition was reduced by decreasing the pH and maintaining the repulsive force, the pH of the washing liquid composition was diluted to 0 to 120 times, and the Zeta potential value was measured. Are shown in Table 5 below.

0 times 30 times 60 times 90 times 120 times 150 times 180 times 210 times Zeta potential
(mV)
-36.4 -43.8 -45.8 -44.6 -43.7 -43.2 -43.9 -43.4
pH 12.73 12.39 12.21 12.16 12.12 12.01 11.9 11.86

As can be seen from the above Table 5, it was confirmed that the cleaning composition of the present invention can be used in a wide range since the change in pH with dilution is small and the change in zeta potential is not so large.

Claims (13)

  1. It does not contain quaternary ammonium hydroxide,
    1 to 15% by weight of alkylamino alcohol, 0.1 to 5% by weight of morpholine, and the balance water,
    The cleaning liquid composition may further include at least one selected from 0.05 to 5% by weight of an organic solvent and 0.1 to 5% by weight of a corrosion inhibitor,
    Wherein the alkylamino alcohol comprises at least one secondary alkyl amino alcohol and at least one tertiary alkyl amino alcohol,
    Wherein the cleaning composition is used for cleaning after a chemical-mechanical polishing (CMP) process.
  2. delete
  3. delete
  4. delete
  5. delete
  6. The method according to claim 1,
    Wherein said secondary alkyl amino alcohol is selected from the group consisting of butyl ethanolamine, methyl ethanol amine, and diethanol amine.
  7. The method of claim 6,
    Wherein the secondary alkyl amino alcohol comprises methyl ethanol amine.
  8. The method according to claim 1,
    Wherein said tertiary alkylamino alcohol is selected from the group consisting of butyldiethanolamine, dibutylethanolamine, diethylethanolamine, methyldiethanolamine, methyldiisopropanolamine, and triethanolamine.
  9. The method according to claim 1,
    The morpholine may be selected from the group consisting of N-methylmorpholine, morpholine, N-acetylmorpholine, 4- (2-hydroxyethyl) morpholine, 2,2'-diphosphoronodiethylether, Wherein the cleaning liquid composition is at least one selected from the group consisting of:
  10. The method according to claim 1,
    Wherein the organic solvent is at least one selected from the group consisting of diethylene glycol monoethyl ether, triethylene glycol butyl methyl ether, and triethylene glycol ethyl ether.
  11. The method according to claim 1,
    Wherein the corrosion inhibitor is at least one selected from the group consisting of N, N-diethylhydroxylamine, ascorbic acid, pyrazole, and sorbitol.
  12. A method of manufacturing a semiconductor device comprising the step of cleaning a substrate subjected to a chemical-mechanical polishing (CMP) process with the cleaning liquid composition of claim 1.
  13. The method according to claim 1,
    Wherein the cleaning composition has a pH in the range of from about 11.86 to about 12.73.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101467270B1 (en) * 2013-11-07 2014-12-01 에이케이켐텍 주식회사 Surfactant-free flux removal aqueous cleaning agent composition

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TWI449784B (en) * 2006-12-21 2014-08-21 Advanced Tech Materials Liquid cleaner for the removal of post-etch residues

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101467270B1 (en) * 2013-11-07 2014-12-01 에이케이켐텍 주식회사 Surfactant-free flux removal aqueous cleaning agent composition

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