KR101824034B1

KR101824034B1 - A light emitting device package

Info

Publication number: KR101824034B1
Application number: KR1020110048866A
Authority: KR
Inventors: 주현승; 임우식
Original assignee: 엘지이노텍 주식회사
Priority date: 2011-05-24
Filing date: 2011-05-24
Publication date: 2018-01-31
Also published as: KR20120130846A

Abstract

A light emitting device package according to an embodiment includes a light emitting device including a package body, a light emitting structure, a first electrode, and a second electrode, a first bump portion and a second bump portion spaced apart from each other on one surface of the package body, And a conductive adhesive layer which is disposed between the package body and the light emitting element and electrically connects the first electrode and the first bump portion and electrically connects the second electrode and the second bump portion.

Description

A light emitting device package

An embodiment relates to a light emitting device package.

In order for a light emitting device to be used as an illumination, it is necessary to obtain white light using an LED. There are three known methods for implementing a white semiconductor light emitting device.

The first method is to implement white by combining three LEDs emitting red, green, and blue, which are the three primary colors of light. The second method uses a UV LED as a light source to emit white light by exciting a primary color phosphor, and uses R, G, and B phosphors as a light emitting material. A third method is to emit white light by exciting a yellow phosphor using a blue LED as a light source, and generally uses a YAG: Ce phosphor as a light emitting material.

The embodiment provides a light emitting device package capable of improving reliability and simplifying a manufacturing process.

A light emitting device package according to an embodiment includes a package body; A light emitting structure including a light emitting structure, a first electrode, and a second electrode; A first bump portion and a second bump portion disposed on one surface of the package body and spaced apart from each other; And a conductive adhesive layer disposed between the package body and the light emitting element, electrically connecting the first electrode and the first bump portion, and electrically connecting the second electrode and the second bump portion.

The first bump portion and the second bump portion may include a stud bump. Wherein the first bump portion comprises: a first metal layer disposed on an upper surface of the package body; A first bump layer disposed on the first metal layer to face the first electrode; And a first via connected to the first metal layer and penetrating the package body to be exposed to a lower surface of the package body, the second bump portion being disposed on an upper surface of the package body; A second bump layer disposed on the second metal layer to face the second electrode; And a second via connected to the second metal layer and exposed through the lower surface of the package body through the package body.

The first bump layer may include a plurality of spaced apart first bumps, and the second bump layer may include a plurality of spaced apart second bumps.

The first bumps may be aligned with a first via in a vertical direction and the second bumps may be aligned with a second via in a vertical direction and the vertical direction may be a direction from the light emitting device to the package body.

The first bumps may be symmetrically disposed on the first metal layer with respect to the first via and the second bumps may be symmetrically disposed on the second metal layer with respect to the second via.

Wherein the conductive adhesive layer comprises: an insulating portion for bonding the light emitting device and the package body; And a plurality of conductive particles included in the insulating portion, wherein a distance between the first bump layer and the second bump layer may be greater than a size of the conductive particles.

Wherein the light emitting device package includes: a support substrate disposed between the light emitting device and the package body; A first connection electrode portion provided on the supporting substrate, the first connection electrode portion being electrically connected to the first electrode; And a second connection electrode portion provided on the support substrate, the second connection electrode portion being electrically connected to the second electrode, wherein the conductive adhesive layer is disposed between the support substrate and the package body, The first bump portion may be electrically connected and the second connection electrode portion may be electrically connected to the second bump portion.

Wherein the light emitting device package includes a first bonding portion for bonding and electrically connecting the first electrode and the first connection electrode portion; And a second bonding unit bonding and electrically connecting the second electrode and the second connection electrode unit.

The first electrode and the second electrode may be disposed on one surface of the light emitting structure facing the package body. A light extracting pattern may be formed on the opposite surface of the light emitting structure. The light emitting device may further include a light transmitting substrate disposed on a side opposite to the one side of the light emitting structure. One surface of the package body on which the first bump portion and the second bump portion are disposed may be flat.

The embodiment can improve the reliability and simplify the manufacturing process.

1 is a cross-sectional view of a light emitting device package according to a first embodiment.
2 is a perspective view showing a light emitting device and a package body of the first embodiment.
3 is a cross-sectional view of a light emitting device package according to the second embodiment.
4 is a perspective view showing a light emitting device and a package body of the second embodiment.
5 is a cross-sectional view of a light emitting device package according to the third embodiment.
6 shows a light emitting device package according to a fourth embodiment.
7 shows a light emitting device package according to a fifth embodiment.
8 shows a light emitting device package according to the sixth embodiment.
9 to 15 show a method of manufacturing the light emitting device package according to the embodiment.
16 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment.
17A shows a display device including the light emitting device package according to the embodiment.
17B is a sectional view of the light source portion of the display device shown in Fig. 17A.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size. Hereinafter, a method of manufacturing a light emitting device package and a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view of a light emitting device package 100 according to a first embodiment, and FIG. 2 is a perspective view illustrating a light emitting device and a package body of the first embodiment. 2, the illustration of the conductive adhesive layer 150 is omitted.

1 and 2, a light emitting device package 100 includes a package body 110, a light emitting device 110 disposed on the package body 110, a first bump part 110 disposed on the package body 110, The first bump part 130 and the second bump part 140 are disposed between the light emitting device 110 and the package body 110 and the first bump part 130 and the second bump part 140 are disposed between the light emitting device 110 and the package body 110, And an electrically conductive adhesive layer 150 electrically connected thereto.

The light emitting device 110 includes a substrate 10, a light emitting structure 20 on the substrate 10, a conductive layer 30 on the light emitting structure 20, an insulating layer 40 on the conductive layer 30, The first electrode 52 and the second electrode 54 on the substrate 40.

1 illustrates a light emitting device 110 bonded to a package body 110 so that a light emitting structure 20 is disposed under the substrate 10 and a conductive layer 30 is formed under the light emitting structure 20. [ And an insulating layer 40 is disposed below the conductive layer 30. A first electrode 52 and a second electrode 54 are disposed under the insulating layer 40. [ The positional relationship will be described below with reference to FIG.

The light emitting structure 20 is located under one surface of the substrate 10. The substrate 10 may be a light-transmitting substrate. 1, one side 12 of the substrate 10 may be the underside of the substrate 10 facing the package body 110.

The light emitting structure 20 may include a plurality of compound semiconductor layers 22, 24, 26 of Group 3 to Group 5 elements. The light emitting structure 20 includes a first conductive semiconductor layer 22, a second conductive semiconductor layer 26 located under the first conductive semiconductor layer 22, and a first conductive semiconductor layer 22, And an active layer 24 located between the second conductivity type semiconductor layers 26.

The side surface of the light emitting structure 20 may be an inclined surface in an isolation etching process that is divided into unit chips. For example, the slope of the side surface of the light emitting structure 20 may be greater than 0 degrees and less than or equal to 90 degrees with respect to the substrate 10.

The first conductive semiconductor layer 22 may be a compound semiconductor of a group III-V element doped with the first conductive dopant. The first conductivity type semiconductor layer 22 is a semiconductor material having a composition formula of In _x Al _y Ga ₁ _-x- _y N (0? X? 1, 0? _Y? 1, 0? _X + y? And may be doped with an n-type dopant such as Si, Ge, Sn, Se, Te, or the like, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, .

The active layer 24 is disposed under the first conductivity type semiconductor layer 22 and includes electrons and holes provided from the second conductivity type semiconductor layer 26 and the first conductivity type semiconductor layer 22, It is possible to generate light by the energy generated in the recombination process. The active layer 24 may include a semiconductor material having a composition formula of In _x Al _y Ga ₁ _-x- _y N (0? X? 1, 0? _Y? 1, 0? _X + y? The active layer 24 may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum well structure.

When the active layer 24 is a multiple quantum well structure, the active layer 24 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the well layer / barrier layer of the active layer 120 may include at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But is not limited thereto. At this time, the well layer may be formed of a material having an energy band gap lower than the energy band gap of the barrier layer.

The second conductive semiconductor layer 26 may be a compound semiconductor of a group III-V element doped with a second conductive dopant, which is disposed below the active layer 24. [ The second conductivity type semiconductor layer 26 is a semiconductor material having a composition formula of In _x Al _y Ga ₁ _-x- _y N (0? X? 1, 0? _Y? 1, 0? _X + y? And may be doped with a p-type dopant such as Mg, Zn, Ca, Sr, and Ba, or may be doped with a dopant such as Mg, Zn, Al, .

A clad layer doped with an n-type or p-type dopant is formed between the active layer 24 and the first conductive semiconductor layer 146 or between the active layer 24 and the second conductive semiconductor layer 142, And the cladding layer may be a semiconductor layer including AlGaN or InAlGaN.

In the above description, the first conductivity type semiconductor layer 22 includes the n-type semiconductor layer and the second conductivity type semiconductor layer 26 includes the p-type semiconductor layer, but the embodiment is not limited thereto . The first conductivity type semiconductor layer 22 may include a p-type semiconductor layer, and the second conductivity type semiconductor layer 26 may include an n-type semiconductor layer. An n-type or p-type semiconductor layer may be formed under the second conductivity type semiconductor layer 26. Accordingly, the light emitting structure 20 may include at least one of np, pn, npn, or pnp junction structures. In addition, the doping concentrations of the dopants in the first conductivity type semiconductor layer 22 and the second conductivity type semiconductor layer 26 may be uniform or non-uniform. That is, the structure of the light emitting structure 20 can be variously modified.

The conductive layer 30 is disposed under the second conductive type semiconductor layer 26. The conductive layer 30 is formed of a transparent material such as indium tin oxide (ITO), tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium aluminum zinc oxide (IAZO) At least one of Gallium Zinc Oxide (IGTO), IGTO (Indium Gallium Tin Oxide), AZO (Aluminum Zinc Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), ZnO &Lt; / RTI >

The light emitting structure 20 exposes one region 22-1 of the first conductivity type semiconductor layer 22. For example, the light emitting structure 20 may be partly etched to expose one region 22-1 of the first conductivity type semiconductor layer 22. This is described in FIG.

The first electrode 52 is electrically connected to the exposed first conductive semiconductor layer 22 and the second electrode 54 is electrically connected to the conductive layer 30. The insulating layer 40 insulates the first electrode 52 from the light emitting structure 20 and the conductive layer 30.

For example, the insulating layer 40 may cover one region 22-1 of the exposed portion of the first conductivity type semiconductor layer 22, and the conductive layer 30. The first electrode 52 penetrates the insulating layer 40 and contacts one region 22-1 of the first conductive semiconductor layer 22 and the second electrode 54 contacts the insulating layer 40 And can be in contact with the conductive layer 30.

The first electrode 52 and the second electrode 54 may be formed of a metal having excellent conductivity such as Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, , Mo, Nb, Al, Ni, Cu, WTi, V, or an alloy thereof.

The package body 110 is disposed under the first electrode 52 and the second electrode 54. The package body 110 may be formed of a resin such as polyphthalamide (PPA), a liquid crystal polymer (LCP), a polyamide 9T or PA9T, a metal, a photosensitive glass, , A ceramic, a printed circuit board (PCB), or the like. However, the package body 110 according to the embodiment is not limited to such a material.

The first bump portion 130 and the second bump portion 140 are spaced apart from each other on one side of the package body 110. One side of the package body 110 may be the upper surface 112 of the package body 110 facing the first electrode 52 and the second electrode 54. At this time, the upper surface 112 of the package body 110 is flat.

The first bump unit 130 is disposed on a portion of the package body 110 corresponding to the first electrode 52 and the second bump unit 140 is disposed on the package body 110 corresponding to the second electrode 54. [ As shown in FIG. The first bump portion 130 is electrically connected to the first electrode 52 and the second bump portion 140 is electrically connected to the second electrode 54.

The first bump portion 130 and the second bump portion 140 disposed on the upper surface of the package body 110 are electrically connected to the first electrode 52 and the second electrode 54 from the upper surface 112 of the package body 110, As shown in Fig.

Other metal may be plated on the surfaces of the first bump portion 130 and the second bump portion 140. The first bump portion 130 and the second bump portion 140 may be formed of a material having excellent conductivity such as titanium, copper, nickel, gold, chromium, tantalum, And may include at least one of platinum (Pt), tin (Sn), and silver (Ag).

Power may be supplied to the light emitting device 100 through the first bump unit 130 and the second bump unit 140. [ Further, heat generated from the light emitting device 100 can be emitted through the first bump part 130 and the second bump part 140.

The first bump portion 130 includes a first metal layer 134 disposed on an upper surface of the package body 110, a first bump layer 132 disposed on the first metal layer 134, a first metal layer 134, And a first via (136) connected and exposed through the package body (110) to the lower surface (114) of the package body (110). The first bump layer 132 may include a plurality of first bumps 132-1 through 132-3 disposed on the first metal layer 134 and spaced apart from each other.

At this time, the first metal layer 134 and the first vias 136 may be integrated. The first bump unit 130 may further include a first heat dissipation layer (not shown) connected to the first via 136 and disposed on the lower surface 112 of the package body 110.

The second bump part 140 includes a second metal layer 144 disposed on the upper surface of the package body 110 and spaced apart from the first metal layer 134. A second bump layer 142 disposed on the second metal layer 144, And a second via 146 connected to the second metal layer 144 and exposed through the package body 110 to the lower surface 114 of the package body 110. The second bump layer 142 may include a plurality of second bumps 142-1 through 142-3 disposed on the second metal layer 144 and spaced apart from each other. The number and arrangement of the first bumps and the second bumps are not limited to those shown in Fig.

The second metal layer 144 and the second via 146 may be integrally formed. The second bump portion 140 may further include a second heat dissipation layer (not shown) connected to the second via 146 and disposed on the lower surface 112 of the package body 110.

The first via 136 may be aligned with the first bump layer 132 in a vertical direction and the second via 146 may be aligned with the second bump layer 142 in a vertical direction, It is not. Here, the vertical direction may be a direction from the light emitting device 120 to the package body 110.

For example, the first bumps 132-1 through 132-3 may be vertically aligned with the first via 136, and the second bumps 142-1 through 142-3 may be aligned with the second via 146 As shown in FIG. Here, each of the first bumps 132-1 through 132-3 and the second bumps 142-1 through 142-3 may be a stud bump. The distance between the first bump layer 132 and the second bump layer 142 is greater than the size of the conductive particles to prevent a short circuit between the first bump layer 132 and the second bump layer 142.

The heat generated from the light emitting device 110 is transferred to the first bump layer 132 and the second bump layer 142 through the first electrode 52 and the second electrode 54, And the second vias 144 radiate heat transferred to the first bump layer 132 and the second bump layer 142 to the outside of the package body 110 to improve the heat radiation efficiency of the light emitting device package 100 .

The conductive adhesive layer 150 is disposed between the light emitting device 120 and the package body 110 and electrically connects the first electrode 52 to the first bump layer 132 and electrically connects the second electrode 54 to the first bump layer 132. [ And electrically connects to the 2-bump layer 142.

The conductive adhesive layer 150 may include an insulating portion 154 serving as an adhesive layer for bonding the light emitting device 120 and the package body 110 and a plurality of conductive particles 152 included in the insulating portion 154 have. For example, the conductive adhesive layer 150 may be an anisotropic conductive film (ACF), or an anisotropic conductive adhesive (ACA).

The insulating portion 154 may include a resin, for example, an epoxy resin. The conductive particles 152 may be particles of various conductive materials, for example, particles plated with gold (Ni) or particles plated with nickel (Ni) or gold (Au) to a resin core. The resin core of the conductive particles 152 may be various resins such as polystyrene, polymethacrylate, polymethyl methacrylate, divinylbenzene, and the like.

The conductive particles 152 are electrically connected to the first electrode 52 and the first bump layer 132 and electrically connect the second electrode 54 to the second bump layer 142.

In general, when bonding a package body and a light emitting device, an anisotropic conductive film is used due to a risk of short circuit. However, in the embodiment, an anisotropic conductive adhesive in paste form as well as an anisotropic conductive film can be used as the conductive adhesive layer 150 .

The use of anisotropic conductive adhesive (ACA) has the following advantages. The anisotropic conductive adhesive (ACA) can be applied to a light emitting device package that can be mounted at a low temperature and includes various materials. In the case of the anisotropic conductive film, the first electrode 52 and the second electrode 54 must have a predetermined thickness or more to withstand the bonding pressure. However, when the anisotropic conductive adhesive is used, And the thickness of the second electrode 54 can be reduced.

The anisotropic conductive adhesive is low in cost, easy to apply, and can be used for a printing apparatus or a dispenser apparatus, so that it is not required to install a separate facility, and the manufacturing cost can be reduced.

Since the first bump portion 130 and the second bump portion 140 are protruded from the upper surface 112 of the package body 110, the first electrode 52 and the first bump portion 130 And the distance between the second electrode 54 and the second bump portion 140 can be reduced. The first electrode 52 and the first bump portion 130 can be easily electrically connected by the conductive particles 152 and the second electrode 54 and the second bump portion 140 can be easily connected And can be electrically connected.

The other part of the package body 110 in which the first bump part 130 and the second bump part 140 are not provided has a relatively small distance from the first electrode 52 or the second electrode 54, Electrical connection is not easy because of its size. This prevents the first electrode 52 connected to the first bump unit 130 and the second electrode 54 connected to the second bump unit 140 from being shorted to each other, Reliability can be improved.

Since the first electrode 52 connected to the first bump unit 130 and the second electrode 54 connected to the second bump unit 140 are prevented from shorting to each other, The pitch between the first bump portion 130 and the second bump portion 140 and the pitch between the first bump portion 130 and the second bump portion 140 can be reduced, thereby realizing a light emitting device package having a fine pattern.

In general, when the light emitting device is bonded to the package body, a separate conductive adhesive layer spaced apart from and spaced apart from each other is used to prevent shorting between the first electrode and the second electrode, and each of the first electrode / Precise alignment between the electrode layers of the body is required.

However, since the short circuit is suppressed as described above, the first electrode 52 and the first bump portion 130 are electrically connected to each other using the single conductive adhesive layer 150, and the second electrode 54 and the second electrode 54 are electrically connected to each other. The second bump part 140 can be electrically connected and the first electrode 52 and the first bump part 130 and the second electrode 54 and the second bump part 140 are not required to be precisely aligned The manufacturing process can be simplified.

FIG. 3 is a cross-sectional view of a light emitting device package according to a second embodiment, and FIG. 4 is a perspective view illustrating a light emitting device and a package body of the second embodiment. The same reference numerals as those in Figs. 1 and 2 denote the same constituent elements, and duplicate contents thereof will be omitted or briefly explained.

Referring to Figs. 3 and 4, the second embodiment has a structure similar to that of the first embodiment. However, the first bump portion 130-1 and the second bump portion 140-1 are different from each other.

The first bump portion 130-1 includes a first bump layer 210, a first metal layer 134, and a first via 136. The first bump layer 210 includes a plurality of first bumps 211 to 216 spaced from each other in the first electrode layer 134.

The first bumps 211 to 216 are not vertically aligned with the first vias 136. [ For example, the first bumps 211 to 216 may be symmetrically disposed on the first metal layer 134 relative to the first via 136.

The second bump portion 140-1 includes a second bump layer 220, a second metal layer 144, and a second via 146. The second bump layer 220 includes a plurality of second bumps 221 to 226 that are spaced apart from each other on the second electrode layer 144.

The second bump layer 220 does not align vertically with the second vias 146. For example, the second bumps 221 to 216 may be symmetrically disposed on the second metal layer 144 relative to the second via 146. The number and arrangement of the first bumps 211 to 216 and the second bumps 221 to 226 shown in Figs. 3 and 4 are not limited thereto.

5 is a cross-sectional view of a light emitting device package 300 according to the third embodiment. The same reference numerals as those in FIG. 1 denote the same components, and duplicate contents of the foregoing description will be omitted or briefly explained.

5, the third embodiment differs from the first embodiment in that the substrate 10 is removed from the light emitting device 110 and the first conductive semiconductor layer (not shown) exposed when the substrate 10 is removed 110 having a light extraction pattern 160 on its surface.

The light extracting pattern 160 may reduce the amount of light reflected from the surface of the first conductivity type semiconductor layer 110 to improve light extraction efficiency of the light emitting device package 300. The light extraction pattern 160 may be a regular pattern or an irregular and random shape.

For example, the light extracting pattern 160 may have a photonic crystal structure having a period of 50 nm to 3000 nm. The light extraction pattern 160 may have various shapes such as a cylinder, a polygonal column, a cone, a polygonal pyramid, a truncated cone, and a polygonal pyramid.

6 shows a light emitting device package 300-1 according to the fourth embodiment. The same reference numerals as those in FIG. 5 denote the same components, and duplicated contents thereof will be omitted or briefly explained.

Referring to FIG. 6, the fourth embodiment is similar to the third embodiment, but includes first bumps 210 symmetrically disposed on the first metal layer 134 with respect to the first via 136, And second bumps 220 symmetrically disposed on the second metal layer 144 with respect to the second via 146.

7 shows a light emitting device package 400 according to a fifth embodiment. The same reference numerals as those in FIG. 1 denote the same components, and duplicate contents of the foregoing description will be omitted or briefly explained.

7, the fifth embodiment differs from the first embodiment in that an insulating layer 40 (see FIG. 1) is formed between the light emitting structure 20 and the first and second electrodes 52 and 54, . Since the insulating portion 154 of the conductive adhesive layer 150 can insulate the first electrode 52 from the light emitting structure 20 and the conductive layer 30, the formation of the insulating layer 40 is omitted in the fourth embodiment The manufacturing process can be simplified.

8 shows a light emitting device package 500 according to the sixth embodiment. The same reference numerals as those in Figs. 1, 3, and 6 denote the same components, and duplicate contents thereof will be omitted or briefly explained.

8, the light emitting device package 500 includes a light emitting device 120, a support substrate 310, a first connection electrode 320, a second connection electrode 330, a first adhesive 312, The package body 110, the first bump portion 130, the second bump portion 140, and the conductive adhesive layer 150. The second bonding portion 314 includes a first bonding portion 311, a second bonding portion 314, a package body 110,

The structures of the light emitting device 120, the package body 110, the first bump portion 130-1, the second bump portion 140-1, and the conductive adhesive layer 150 are the same as those in FIGS. 1 and 3 Can be the same.

The support substrate 310 is disposed between the light emitting device 120 and the package body 110. The first connection electrode part 320 and the second connection electrode part 330 are disposed on the support substrate 310 so as to be spaced apart from each other.

The first connection electrode unit 320 is electrically connected to the first electrode 52 of the light emitting device 120 and the second connection electrode unit 330 is electrically connected to the second electrode 54 of the light emitting device 120. [ Lt; / RTI >

The first connection electrode portion 320 includes a first connection portion 322, a third via 326, and a second connection portion 324. The first connection portion 322 is disposed on one side of the support substrate 310 facing the first electrode 52 and the second connection portion 324 is disposed on the other side of the support substrate 310 facing the package body 110. [ And the third vias 326 pass through the support substrate 310 to connect the first connection portion 322 and the second connection portion 326. [

The second connection electrode portion 330 includes a third connection portion 332, a fourth via 336, and a fourth connection portion 334. The third connection part 332 is disposed on one side of the support substrate 310 facing the second electrode 54 and the fourth connection part 334 is disposed on the other side of the support substrate 310 facing the package body 110. [ And the fourth vias 336 pass through the support substrate 310 to connect the third connection part 332 and the fourth connection part 336. [

The first bonding portion 312 is disposed between the first electrode 52 and the first connection electrode portion 320 and electrically connects the first electrode 52 and the first connection electrode portion 320 by bonding. For example, the first bonding portion 312 may be disposed between the first electrode 52 and the first connection portion 322, and may electrically connect the first electrode 52 and the first connection portion 322 by bonding.

The second adhesive portion 314 is disposed between the second electrode 54 and the second connection electrode portion 330 and electrically connects the second electrode 54 and the second connection electrode portion 330 by bonding. For example, the second adhesive portion 314 may be disposed between the second electrode 54 and the third connection portion 332, and the second electrode 54 and the third connection portion 332 may be electrically connected by bonding.

The first bonding portion 312 and the second bonding portion 314 may be formed of eutectic metal such as Au / Sn, Ni / Cu, Pb / Sn, Au / Ge, Au / Sn / / Sn, Cu / Pb / Sn, and the like.

The conductive adhesive layer 150 is disposed between the support substrate 310 and the package body 110 and bonds the support substrate 310 to the package body 110. The conductive adhesive layer 150 electrically connects the first connection electrode unit 320 and the first bump unit 130 and electrically connects the second connection electrode unit 330 and the second bump unit 140.

For example, the conductive adhesive layer 150 may electrically connect the second connection portion 324 and the first bumps 132, and may electrically connect the fourth connection portion 334 and the second bumps 142.

In the sixth embodiment, the heat dissipation efficiency can be improved by the first connection electrode portion 320 and the second connection electrode portion 330. Also, the sixth embodiment can improve the physical and structural stability of the light emitting device package by the support substrate 310 inserted between the package body 110 and the light emitting device 120. In the sixth embodiment, the substrate 10 is removed, and the light extraction pattern is formed on the first conductivity type semiconductor layer 22. However, the present invention is not limited to this, . &Lt; / RTI >

9 to 15 show a method of manufacturing the light emitting device package according to the embodiment. As shown in FIG. 9, a light emitting structure 20 is formed on a growth substrate 10.

The light emitting structure 20 can be formed by successively growing the first conductive semiconductor layer 22, the active layer 24 and the second conductive semiconductor layer 26 on the growth substrate 10. The light emitting structure 140 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, (MBE), hydride vapor phase epitaxy (HVPE), or the like, but the present invention is not limited thereto.

A mesa etch is performed to remove a portion of the second conductive type semiconductor layer 26, the active layer 24 and the first conductive type semiconductor layer 22 to remove the first conductive type semiconductor layer 22 Expose one area. Mesa etching can be dry etched.

Next, as shown in FIG. 10, a conductive layer 30 is formed on the second conductive type semiconductor layer 26. The first sub-electrode 52a is formed on the first conductive semiconductor layer 22 exposed by the mesa etching. The conductive layer 30 and the first sub-electrode 52a may be formed by E-beam deposition, sputtering, PECVD (Plasma Enhanced Chemical Vapor Deposition), or the like.

Next, as shown in FIG. 11, an insulating layer 40 is formed on the light emitting structure 120, the conductive layer 30, and the first sub-electrode 52a. The insulating layer 40 is etched to form a first opening 40a exposing the first sub-electrode 52a and a second opening 40b exposing a portion of the conductive layer 30.

12, the second sub-electrode 52b connected to the first sub-electrode 52a through the first opening 40a is formed on the insulating layer 40, and the second sub- The second electrode 54 connected to the conductive layer 330 is formed. At this time, the first sub-electrode 52a and the second sub-electrode 52b constitute the first electrode 52, and the first electrode 52 and the second electrode 54 may be patterned to be electrically separated.

Next, as shown in FIG. 13, a package body 110 to be electrically connected to the first electrode 52 and the second electrode 54 is prepared. The first via-holes 412 and the second via-holes 414 are formed in the package body 110.

14, a first via 136 and a second via 146 are formed by filling the first via-holes 412 and the second via-holes 414 with a metal material, and the first via- A first metal layer 134 connected to the first via layer 136 and a second metal layer 144 connected to the second via 146 are formed on the package body 110. The first and second vias 136, 146 and the first and second metal layers 134, 144 may be formed by sputtering or deposition.

A first bump layer 132 is formed on the first metal layer 134 and a second bump layer 142 is formed on the second metal layer 144. For example, a first bump layer 132 may be formed on the first metal layer 134 and a second bump layer 142 may be formed on the second metal layer 144 using a stud bump forming process .

The stud bump is a wire or stud having a predetermined length (or height) (reference numeral 430 in FIG. 13) on a compression ball (reference numeral 420 in FIG. 13) pressed on a pad of a die. The stud bump may be formed by a wire bonding device or a bump bonding device.

Next, as shown in FIG. 15, a conductive adhesive layer 150 is disposed between the light emitting device 120 and the package body 110, heat and pressure are applied thereto, and the light emitting device 120 and the package body 110 are bonded The first electrode 52 electrically connects the first bump layer 132 to the second electrode 54 by the conductive particles 152 and electrically connects the second bump layer 142 to the second electrode 54. [

Still another embodiment may be implemented as a display device, an indicating device, and a lighting system including the light emitting device package described in the above embodiments.

16 is an exploded perspective view of a lighting device including a light emitting device package according to an embodiment. 16, a lighting apparatus according to an exemplary embodiment includes a light source 750 for projecting light, a housing 700 having a light source 7500 therein, a heat dissipation unit 740 for emitting heat of the light source 750, And a holder 760 coupling the heat sink 750 and the heat dissipating unit 740 to the housing 700.

The housing 700 includes a socket coupling portion 710 coupled to an electric socket (not shown), and a body portion 730 connected to the socket coupling portion 710 and having a light source 750 embedded therein. One air flow hole 720 may be formed through the body portion 730.

A plurality of air flow holes 720 are provided on the body portion 730 of the housing 700 and one or more air flow holes 720 may be provided. The air flow port 720 may be disposed radially or in various forms on the body portion 730.

The light source 750 includes a plurality of light emitting device packages 752 provided on the substrate 754. [ The substrate 754 may have a shape that can be inserted into the opening of the housing 700 and may be made of a material having a high thermal conductivity to transmit heat to the heat dissipating unit 740 as described later. The plurality of light emitting device packages may be any one of the embodiments described above.

A holder 760 is provided below the light source 750, and the holder 760 may include a frame and other air flow holes. Although not shown, an optical member may be provided under the light source 750 to diffuse, scatter, or converge light projected from the light emitting device package 752 of the light source 750.

FIG. 17A shows a display device including a light emitting device package according to the embodiment, and FIG. 17B is a sectional view of a light source part of the display device shown in FIG. 17A.

17A and 17B, the display device includes a backlight unit and a liquid crystal display panel 860, a top cover 870, and a fixing member 850.

The backlight unit includes a bottom cover 810, a light emitting module 880 provided on one side of the bottom cover 810, a reflection plate 820 disposed on the front surface of the bottom cover 810, A light guide plate 830 disposed in front of the light guide plate 820 and guiding light emitted from the light emitting module 880 toward the front of the display device and an optical member 840 disposed in front of the light guide plate 30. The liquid crystal display device 860 is disposed in front of the optical member 840. The top cover 870 is provided in front of the liquid crystal display panel 860 and the fixing member 850 is disposed in the bottom cover 810, (870) to fix the bottom cover 810 and the top cover 870 together.

The light guide plate 830 guides the light emitted from the light emitting module 880 to be emitted in the form of a surface light source and the reflection plate 820 disposed behind the light guide plate 830 reflects light emitted from the light emitting module 880 Is reflected in the direction of the light guide plate 830, thereby enhancing light efficiency. However, the reflection plate 820 may be formed as a separate component as shown in the drawing, or may be formed to be coated on the rear surface of the light guide plate 830 or on the front surface of the bottom cover 810 with a highly reflective material . Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 830 scatters the light emitted from the light emitting module 880 and uniformly distributes the light over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

An optical member 840 is provided at an upper portion of the light guide plate 830 to diffuse the light emitted from the light guide plate 830 at a predetermined angle. The optical member 840 allows the light guided by the light guide plate 830 to be uniformly irradiated toward the liquid crystal display panel 860. As the optical member 840, an optical sheet such as a diffusion sheet, a prism sheet, or a protective sheet may be selectively laminated, or a microlens array may be used. At this time, a plurality of optical sheets may be used, and the optical sheet may be made of a transparent resin such as an acrylic resin, a polyurethane resin, or a silicone resin. It is to be noted that the fluorescent sheet may be included in the prism sheet described above.

A liquid crystal display panel 860 may be provided on the front surface of the optical member 840. Here, it goes without saying that other types of display devices requiring a light source besides the liquid crystal display panel 860 may be provided. A reflection plate 820 is placed on the bottom cover 810 and a light guide plate 830 is placed on the reflection plate 820. Thus, the reflection plate 820 may be in direct contact with the heat radiation member (not shown). The light emitting module 880 includes a light emitting device package 882 and a printed circuit board 881. The light emitting device package 882 is mounted on the printed circuit board 881. Here, the light emitting device package 881 may be any one of the above embodiments.

The printed circuit board 881 may be bonded onto the bracket 812. Here, the bracket 812 is made of a material having a high thermal conductivity for dissipating heat in addition to fixing the light emitting device package 882. Although not shown, a heat pad is provided between the bracket 812 and the light emitting device package 882 Thereby facilitating heat transfer. The horizontal portion 812a is supported by the bottom cover 810 and the vertical portion 812b is fixed to the printed circuit board 881 can do.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: substrate 20: light emitting structure
22: first conductivity type semiconductor layer 24: active layer
26: second conductivity type semiconductor layer 30: conductive layer
40: insulating layer 52: first electrode
54: second electrode 110: package body
120: light emitting device 130: first bump part
132: first bump layer 134: first metal layer
136: first via 140: second bump part
142: first bump layer 144: second metal layer
146: second via 150: conductive adhesive layer
160: light extraction pattern 310: support substrate
312: first bonding portion 314: second bonding portion
320: first connection electrode part 330: second connection electrode part.

Claims

A package body;
A light emitting structure including a light emitting structure, a first electrode, and a second electrode;
A first metal layer disposed on an upper surface of the package body; first bumps disposed on the first metal layer to face the first electrode; and a second metal layer connected to the first metal layer, A first bump including a first via exposed to the bottom;
A second metal layer disposed on the upper surface of the package body, second bumps disposed on the second metal layer to face the second electrode, and a second metal layer connected to the second metal layer, A second bump including a second via exposed to the first bump; And
And a conductive adhesive layer disposed between the package body and the light emitting device, the conductive adhesive layer including a plurality of conductive particles contained in the insulating portion,
The first bumps are spaced apart from the first electrode, the second bumps are spaced from the second electrode,
Wherein a distance between the first electrode and the first bumps is smaller than a distance between one region of the upper surface of the package body where the first and second bump portions are not provided and the first electrode,
Wherein the conductive particles are disposed between the first bumps and the first electrode,
Wherein the first bumps are aligned with a first via in a vertical direction, the second bumps are aligned with a second via in a vertical direction, and the vertical direction is a direction from the light emitting element to the package body.

The method according to claim 1,
Electrically connecting the first bumps and the first electrode electrically,
Wherein a distance between the second electrode and the second bumps is smaller than a distance between the one area of the upper surface of the package body and the second electrode,
Wherein the conductive particles are disposed between the second bumps and the second electrode, and electrically connect the second bumps and the second electrode electrically.

The method of claim 1, wherein each of the first bumps and the second bumps comprises:
A light emitting device package that is a stud bump.

The conductive adhesive layer according to claim 1,
An anisotropic conductive film (ACF), or an anisotropic conductive adhesive (ACA).

3. The method of claim 2,
Wherein a distance between the first bumps and the second bumps is larger than a size of the conductive particles.

The method according to claim 1,
A support substrate disposed between the light emitting device and the package body;
A first connection portion disposed on an upper surface of the support substrate, a second connection portion disposed on a lower surface of the support substrate, and a third via connecting the first connection portion and the second connection portion through the support substrate, 1 connecting electrode portion;
A third connection portion disposed on the upper surface of the support substrate, a fourth connection portion disposed on a lower surface of the support substrate, and a fourth via connecting the third connection portion and the fourth connection portion through the support substrate. 2 connecting electrode parts;
A first bonding portion for bonding and electrically connecting the first electrode and the first connection portion; And
Further comprising a second bonding portion for bonding and electrically connecting the second electrode and the third connection portion,
Wherein the conductive adhesive layer is disposed between the support substrate and the package body,
The conductive particles electrically connecting the second connection portion and the first bumps electrically, and electrically connecting the fourth connection portion and the second bumps electrically.

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