KR20120130846A - A light emitting device package - Google Patents

A light emitting device package Download PDF

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Publication number
KR20120130846A
KR20120130846A KR1020110048866A KR20110048866A KR20120130846A KR 20120130846 A KR20120130846 A KR 20120130846A KR 1020110048866 A KR1020110048866 A KR 1020110048866A KR 20110048866 A KR20110048866 A KR 20110048866A KR 20120130846 A KR20120130846 A KR 20120130846A
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KR
South Korea
Prior art keywords
light emitting
electrode
bump
emitting device
layer
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KR1020110048866A
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Korean (ko)
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KR101824034B1 (en
Inventor
주현승
임우식
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엘지이노텍 주식회사
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Priority to KR1020110048866A priority Critical patent/KR101824034B1/en
Publication of KR20120130846A publication Critical patent/KR20120130846A/en
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Publication of KR101824034B1 publication Critical patent/KR101824034B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE: A light emitting device package is provided to produce a white color by exciting a yellow fluorescent material using a blue LED as a light source. CONSTITUTION: A light emitting device comprises a light emitting structure(20), a first electrode, and a second electrode. A first bump part(130) and a second bump part(140) are arranged to be separated on one side of a package body(110). A conductive adhesive layer is arranged between the package body and the light emitting device. The conductive adhesive layer electrically connects the first electrode and the first bump part. The first bump part and the second bump part include a stud bump.

Description

Light emitting device package

Embodiments relate to a light emitting device package.

In order for a light emitting device to be applied for lighting, it is necessary to obtain white light using an LED. Three methods are known for implementing a white semiconductor light emitting device.

The first method is to combine the three LEDs of red, green, and blue, which are three primary colors of light, to realize white color. The second method uses a UV LED as a light source to excite the three primary phosphors to realize white color, and uses R, G, and B phosphors as light emitting materials. The third method is a method of realizing white by exciting a yellow phosphor by using a blue LED as a light source, and generally uses a YAG: Ce phosphor as a light emitting material.

The embodiment provides a light emitting device package capable of improving reliability and simplifying a manufacturing process.

The light emitting device package according to the embodiment includes a package body; A light emitting device including a light emitting structure, a first electrode, and a second electrode; A first bump part and a second bump part spaced apart from each other on one surface of the package body; And a conductive adhesive layer disposed between the package body and the light emitting device to electrically connect the first electrode and the first bump part and electrically connect the second electrode and the second bump part.

The first bump part and the second bump part may include a stud bump. A first metal layer disposed on an upper surface of the package body; A first bump layer disposed on the first metal layer to face the first electrode; And a first via connected to the first metal layer and exposed through the package body to the bottom surface of the package body, wherein the second bump part is disposed on the top surface of the package body; A second bump layer disposed on the second metal layer to face the second electrode; And a second via connected to the second metal layer and penetrating through the package body to be exposed to the bottom surface of the package body.

The first bump layer may include a plurality of first bumps spaced apart from each other, and the second bump layer may include a plurality of second bumps spaced apart from each other.

The first bumps may be aligned with the first via in a vertical direction and the second bumps may be aligned with the second via in a vertical direction, and the vertical direction may be a direction from the light emitting device to the package body.

The first bumps may be symmetrically disposed on the first metal layer with respect to the first via, and the second bumps may be symmetrically disposed on the second metal layer with respect to the second via.

The conductive adhesive layer may include an insulating part for adhering the light emitting device to the package body; It includes a plurality of conductive particles included in the insulating portion, the separation distance between the first bump layer and the second bump layer may be larger than the size of the conductive particles.

The light emitting device package may include a support substrate disposed between the light emitting device and the package body; A first connection electrode part provided on the support substrate electrically connected to the first electrode; And a second connection electrode part provided on the support substrate that is electrically connected to the second electrode, wherein the conductive adhesive layer is disposed between the support substrate and the package body, and the first connection electrode part and the first connection part are disposed on the support substrate. The first bump part may be electrically connected to each other, and the second connection electrode part and the second bump part may be electrically connected to each other.

The light emitting device package may include: a first adhesive part for electrically connecting the first electrode and the first connection electrode part to each other; And a second adhesive part for electrically connecting the second electrode and the second connection electrode part to be electrically connected to each other.

The first electrode and the second electrode may be disposed on one surface of the light emitting structure facing the package body. The light extraction pattern may be formed on an opposite surface of the one surface of the light emitting structure. The light emitting device may further include a light transmissive substrate disposed on an opposite surface of the one surface of the light emitting structure. One surface of the package body in which the first bump part and the second bump part are disposed may be flat.

Embodiments can improve reliability and simplify the manufacturing process.

1 is a cross-sectional view of a light emitting device package according to a first embodiment.
2 is a perspective view illustrating a light emitting device and a package body according to a first embodiment.
3 is a cross-sectional view of a light emitting device package according to a second embodiment.
4 is a perspective view illustrating a light emitting device and a package body according to a second embodiment.
5 is a cross-sectional view of a light emitting device package according to a third embodiment.
6 illustrates a light emitting device package according to a fourth embodiment.
7 illustrates a light emitting device package according to a fifth embodiment.
8 illustrates a light emitting device package according to a sixth embodiment.
9 to 15 show a method of manufacturing a light emitting device package according to the embodiment.
16 is an exploded perspective view of a lighting apparatus including a light emitting device package according to an embodiment.
17A illustrates a display device including a light emitting device package according to an embodiment.
17B is a cross-sectional view of a light source portion of the display device illustrated in FIG. 17A.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size. Hereinafter, a light emitting device package and a method of manufacturing the light emitting device package according to the embodiment will be described with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting device package 100 according to a first embodiment, and FIG. 2 is a perspective view showing a light emitting device and a package body of the first embodiment. In FIG. 2, illustration of the conductive adhesive layer 150 is omitted.

1 and 2, the light emitting device package 100 includes a package body 110, a light emitting device 110 disposed on the package body 110, and a first bump part disposed on the package body 110. 130 and the second bump unit 140 and the light emitting element 110 and the package body 110 and disposed between the first bump portion 130 and the second bump portion 140 and the light emitting element 110 It includes a conductive adhesive layer 150 for electrically connecting.

The light emitting device 110 includes a substrate 10, a light emitting structure 20 on the substrate 10, a conductive layer 30 on the light emitting structure 20, an insulating layer 40 on the conductive layer 30, and an insulating layer ( A first electrode 52 and a second electrode 54 on 40.

In FIG. 1, since the light emitting device 110 is bonded to face the package body 110, the light emitting structure 20 is disposed below the substrate 10, and the conductive layer 30 is disposed below the light emitting structure 20. The insulating layer 40 is disposed below the conductive layer 30, and the first electrode 52 and the second electrode 54 are disposed below the insulating layer 40. Hereinafter, the positional relationship will be described as shown in FIG. 1.

The light emitting structure 20 is positioned below one surface of the substrate 10. The substrate 10 may be a light transmissive substrate. In FIG. 1, one surface 12 of the substrate 10 may be a bottom surface of the substrate 10 facing the package body 110.

The light emitting structure 20 may include compound semiconductor layers 22, 24, and 26 of a plurality of Group 3 to 5 elements. The light emitting structure 20 may include a first conductive semiconductor layer 22, a second conductive semiconductor layer 26 positioned below the first conductive semiconductor layer 22, and a first conductive semiconductor layer 22. The active layer 24 may be disposed between the second conductive semiconductor layers 26.

The side surface of the light emitting structure 20 may be an inclined surface in an isolation etching process divided into unit chips. For example, the inclination of the side of the light emitting structure 20 may be greater than 0 ° and less than or equal to 90 ° with respect to the substrate 10.

The first conductivity-type semiconductor layer 22 may be a compound semiconductor of group III-V elements doped with the first conductivity type dopant. A first conductive type semiconductor layer 22 is a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Example For example, it may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and n-type dopants such as Si, Ge, Sn, Se, Te, and the like may be doped. .

The active layer 24 is disposed under the first conductive semiconductor layer 22, and electrons and holes provided from the second conductive semiconductor layer 26 and the first conductive semiconductor layer 22. Light may be generated by energy generated during the recombination process of. The active layer 24 may include semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The active layer 24 may include any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure.

When the active layer 24 has a multi-quantum well structure, the active layer 24 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the well layer / barrier layer of the active layer 120 is a structure including at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. It may be, but is not limited thereto. In this case, the well layer may be formed of a material having an energy band gap lower than the energy band gap of the barrier layer.

The second conductivity-type semiconductor layer 26 may be disposed under the active layer 24, and may be a compound semiconductor of a group III-Group 5 element doped with the second conductivity type dopant. A second conductive type semiconductor layer 26 is a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) Example For example, it may be selected from GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like, and p-type dopants such as Mg, Zn, Ca, Sr, and Ba may be doped. .

A clad layer doped with an n-type or p-type dopant between the active layer 24 and the first conductive semiconductor layer 146 or between the active layer 24 and the second conductive semiconductor layer 142. Not shown), and the cladding layer may be a semiconductor layer including AlGaN or InAlGaN.

In the above description, the first conductive semiconductor layer 22 includes an n-type semiconductor layer, and the second conductive semiconductor layer 26 includes a p-type semiconductor layer, but embodiments are not limited thereto. . The first conductive semiconductor layer 22 may include a p-type semiconductor layer, and the second conductive semiconductor layer 26 may include an n-type semiconductor layer. In addition, an n-type or p-type semiconductor layer may be formed under the second conductive semiconductor layer 26. Accordingly, the light emitting structure 20 may include at least one of np, pn, npn, or pnp junction structure. In addition, the doping concentrations of the dopants in the first conductive semiconductor layer 22 and the second conductive semiconductor layer 26 may be uniform or non-uniform. That is, the structure of the light emitting structure 20 may be variously modified.

The conductive layer 30 is disposed under the second conductive semiconductor layer 26. The conductive layer 30 may be formed of a light-transmissive material such as indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), indium aluminum zinc oxide (IZAZO), and indium IGZO (IGZO). At least one of Gallium Zinc Oxide (IGTO), Indium Gallium Tin Oxide (IGTO), Aluminum Zinc Oxide (AZO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), Zinc Oxide (ZnO), RuOx, TiOx, or IrOx It may be made of a material.

The light emitting structure 20 exposes one region 22-1 of the first conductivity type semiconductor layer 22. For example, the light emitting structure 20 may be partially etched to expose one region 22-1 of the first conductivity type semiconductor layer 22. This will be described with reference to FIG. 8.

The first electrode 52 is electrically connected to the exposed first conductive semiconductor layer 22, and the second electrode 54 is electrically connected to the conductive layer 30. The insulating layer 40 insulates the first electrode 52 from the light emitting structure 20 and the conductive layer 30.

For example, the insulating layer 40 may cover one region 22-1 and the conductive layer 30 of the exposed first conductive semiconductor layer 22. In addition, the first electrode 52 penetrates through the insulating layer 40 and contacts one region 22-1 of the first conductivity-type semiconductor layer 22, and the second electrode 54 contacts the insulating layer 40. It may penetrate and contact the conductive layer 30.

The first electrode 52 and the second electrode 54 are metals having excellent conductivity, such as Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr , Mo, Nb, Al, Ni, Cu, WTi, V or an alloy thereof.

The package body 110 is disposed below the first electrode 52 and the second electrode 54. The package body 110 may be formed of resins such as polyphthalamide (PPA), liquid crystal polymer (LCP), polyamide 9T (PA9T), metals, photosensitive glass, sapphire, and the like. It may include a ceramic, a printed circuit board (PCB), and the like. However, the package body 110 according to the embodiment is not limited to this material.

The first bump part 130 and the second bump part 140 are spaced apart from each other on one surface of the package body 110. One surface of the package body 110 may be an upper surface 112 of the package body 110 facing the first electrode 52 and the second electrode 54. At this time, the upper surface 112 of the package body 110 is flat.

The first bump part 130 is disposed in the portion of the package body 110 corresponding to the first electrode 52, and the second bump part 140 is the package body 110 corresponding to the second electrode 54. It can be placed in the part of. The first bump part 130 is a part electrically connected to the first electrode 52, and the second bump part 140 is a part electrically connected to the second electrode 54.

The first bump part 130 and the second bump part 140 disposed on the top surface of the package body 110 may be formed of the first electrode 52 and the second electrode 54 from the top surface 112 of the package body 110. It may have a shape protruding in the direction.

Another metal may be plated on the surfaces of the first bump part 130 and the second bump part 140. The first bump part 130 and the second bump part 140 may have excellent conductivity such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), It may include at least one of platinum (Pt), tin (Sn) or silver (Ag).

Power may be provided to the light emitting device 100 through the first bump part 130 and the second bump part 140. In addition, heat generated from the light emitting device 100 may be emitted through the first bump part 130 and the second bump part 140.

The first bump part 130 may include a first metal layer 134 disposed on an upper surface of the package body 110, a first bump layer 132 disposed on the first metal layer 134, and a first metal layer 134. It may include a first via 136 connected to and exposed through the package body 110 to the bottom surface 114 of the package body 110. The first bump layer 132 may include a plurality of first bumps 132-1 to 132-3 spaced apart from each other on the first metal layer 134.

In this case, the first metal layer 134 and the first via 136 may be integrated. The first bump part 130 may further include a first heat dissipation layer (not shown) connected to the first via 136 and disposed on the bottom surface 112 of the package body 110.

The second bump part 140 is spaced apart from the first metal layer 134, and the second metal layer 144 disposed on the upper surface of the package body 110 and the second bump layer 142 disposed on the second metal layer 144. And a second via 146 connected to the second metal layer 144 and penetrating through the package body 110 and exposed to the bottom surface 114 of the package body 110. The second bump layer 142 may include a plurality of second bumps 142-1 to 142-3 spaced apart from each other on the second metal layer 144. The number and arrangement of the first bumps and the second bumps is not limited to that shown in FIG. 1.

The second metal layer 144 and the second via 146 may be integral. The second bump part 140 may further include a second heat dissipation layer (not shown) connected to the second via 146 and disposed on the bottom surface 112 of the package body 110.

The first via 136 may be aligned with the first bump layer 132 in the vertical direction, and the second via 146 may be aligned with the second bump layer 142 in the vertical direction, but embodiments are limited thereto. It doesn't happen. The vertical direction may be a direction from the light emitting device 120 toward the package body 110.

For example, the first bumps 132-1 to 132-3 may be aligned in a direction perpendicular to the first via 136, and the second bumps 142-1 to 142-3 may correspond to the second via 146. Can be aligned in the vertical direction. In this case, each of the first bumps 132-1 to 132-3 and the second bumps 142-1 to 142-3 may be a stud bump. In order to prevent a short circuit between the first bump layer 132 and the second bump layer 142, the separation distance between the first bump layer 132 and the second bump layer 142 is greater than the size of the conductive particles.

Heat generated from the light emitting device 110 is transferred to the first bump layer 132 and the second bump layer 142 through the first electrode 52 and the second electrode 54, and the first via 134. And the second via 144 releases heat transferred to the first bump layer 132 and the second bump layer 142 to the outside of the package body 110 to improve heat dissipation efficiency of the light emitting device package 100. Can be.

The conductive adhesive layer 150 is disposed between the light emitting device 120 and the package body 110, electrically connects the first electrode 52 to the first bump layer 132, and removes the second electrode 54. 2 is electrically connected to the bump layer 142.

The conductive adhesive layer 150 may include an insulating portion 154 serving as an adhesive layer for bonding the light emitting device 120 and the package body 110 and a plurality of conductive particles 152 included in the insulating portion 154. have. For example, the conductive adhesive layer 150 may be an anisotropic conductive film (ACF) or an anisotropic conductive adhesive (ACA).

The insulating part 154 may include a resin, for example, an epoxy resin. The conductive particles 152 may be various conductive materials, for example, particles coated with gold on nickel (Ni) or particles coated with nickel (Ni) or gold (Au) on a resin core. In this case, the resin core of the conductive particles 152 may be various resins, for example, polystyrene, polymethacrylate, polymethylmethacrylate, divinylbenzene, or the like.

The conductive particles 152 are electrically connected to the first electrode 52 and the first bump layer 132, and electrically connect the second electrode 54 and the second bump layer 142.

In general, when bonding the package body and the light emitting device, an anisotropic conductive film is used due to the risk of short circuit, but in the embodiment, an anisotropic conductive adhesive in the form of a paste as well as an anisotropic conductive film may be used as the conductive adhesive layer 150. .

When using an anisotropic conductive adhesive (ACA) has the following advantages. The anisotropic conductive adhesive (ACA) can be mounted at a low temperature and applied to a light emitting device package including various materials. In the case of the anisotropic conductive film, the first electrode 52 and the second electrode 54 should be equal to or greater than a predetermined thickness so as to withstand the bonding pressure. However, when the anisotropic conductive adhesive is used, the first electrode 52 has no such limitation. And the thickness of the second electrode 54 can be reduced.

Anisotropic conductive adhesives are inexpensive, easy to apply, and can use a printing device or a dispenser device, so that no additional equipment is required, thereby reducing manufacturing costs.

According to the embodiment, since the first bump part 130 and the second bump part 140 protrude from the upper surface 112 of the package body 110, the first bump part 130 and the first bump part 130 are disposed between the first electrode 52 and the first bump part 130. The separation distance between and the separation distance between the second electrode 54 and the second bump part 140 may be reduced. Accordingly, the first electrode 52 and the first bump part 130 may be easily electrically connected by the conductive particles 152, and the second electrode 54 and the second bump part 140 may also be easily connected. Can be electrically connected.

On the other hand, the other part of the package body 110 in which the first bump part 130 and the second bump part 140 are not provided has a relatively separated distance from the first electrode 52 or the second electrode 54. Due to its size, electrical connection is not easy. As a result, the embodiment prevents the first electrode 52 connected to the first bump part 130 and the second electrode 54 connected to the second bump part 140 from being short-circuited with each other to prevent the light emitting device package 100. Reliability can be improved.

Since the short circuit between the first electrode 52 connected to the first bump part 130 and the second electrode 54 connected to the second bump part 140 is suppressed, the first electrode 52 and the second electrode are suppressed. Since the pitch between the 54 and the pitch between the first bump part 130 and the second bump part 140 may be reduced, a light emitting device package having a fine pattern may be implemented.

In general, when bonding the light emitting device to the package body, separate conductive adhesive layers spaced apart from each other and separated from each other to prevent a short circuit between the first electrode and the second electrode, and the package to be connected to each of the first electrode / second electrode Precise alignment between the electrode layers of the body is required.

However, in the embodiment, since the short circuit is suppressed as described above, the first electrode 52 and the first bump part 130 are electrically connected by using one conductive adhesive layer 150 and the second electrode 54 is electrically connected to the first electrode 52. The second bump part 140 may be electrically connected to each other, and precise alignment between the first electrode 52 and the first bump part 130 and the second electrode 54 and the second bump part 140 is not required. This can simplify the manufacturing process.

3 is a cross-sectional view of a light emitting device package according to a second embodiment, and FIG. 4 is a perspective view illustrating a light emitting device and a package body according to a second embodiment. The same reference numerals as those of FIGS. 1 and 2 denote the same configuration, and the descriptions overlapping with the foregoing description will be omitted or briefly described.

3 and 4, the second embodiment has a structure similar to the first embodiment. However, the difference between the first bump part 130-1 and the second bump part 140-1 is different.

The first bump part 130-1 includes a first bump layer 210, a first metal layer 134, and a first via 136. The first bump layer 210 may include a plurality of first bumps 211 to 216 spaced apart from each other on the first electrode layer 134.

The first bumps 211 through 216 are not aligned in a direction perpendicular to the first via 136. For example, the first bumps 211 to 216 may be symmetrically disposed on the first metal layer 134 based on the first via 136.

The second bump part 140-1 includes the second bump layer 220, the second metal layer 144, and the second via 146. The second bump layer 220 includes a plurality of second bumps 221 to 226 spaced apart from each other on the second electrode layer 144.

The second bump layer 220 does not align in a direction perpendicular to the second via 146. For example, the second bumps 221 to 216 may be symmetrically disposed on the second metal layer 144 based on the second via 146. The number and arrangement of the first bumps 211 to 216 and the second bumps 221 to 226 shown in FIGS. 3 and 4 are not limited thereto.

5 is a sectional view of a light emitting device package 300 according to a third embodiment. The same reference numerals as in FIG. 1 denote the same components, and the descriptions overlapping with the above description will be omitted or briefly described.

Referring to FIG. 5, in comparison with the first embodiment, the third embodiment may include a first conductive semiconductor layer that is exposed as the substrate 10 is removed from the light emitting device 110 and the substrate 10 is removed. The light extraction pattern 160 is formed on the surface of the 110.

The light extraction pattern 160 may improve the light extraction efficiency of the light emitting device package 300 by reducing the amount of light totally reflected on the surface of the first conductivity-type semiconductor layer 110. The light extraction pattern 160 may be a regular pattern or an irregular and random shape.

For example, the light extraction pattern 160 may have a photonic crystal structure having a period of 50 nm to 3000 nm. In addition, the light extraction pattern 160 may have various shapes such as a cylinder, a polygonal pillar, a cone, a polygonal pyramid, a truncated cone, and a polygonal truncated cone.

6 shows a light emitting device package 300-1 according to a fourth embodiment. The same reference numerals as in FIG. 5 denote the same components, and a description overlapping with the above description will be omitted or briefly described.

Referring to FIG. 6, the fourth embodiment is similar to the third embodiment, but includes first bumps 210 and symmetrically disposed on the first metal layer 134 based on the first via 136. The second bumps 220 are disposed symmetrically on the second metal layer 144 based on the second via 146.

7 shows a light emitting device package 400 according to the fifth embodiment. The same reference numerals as in FIG. 1 denote the same components, and the descriptions overlapping with the above description will be omitted or briefly described.

Referring to FIG. 7, in comparison with the first embodiment, the fifth embodiment includes an insulating layer (reference numeral 40 in FIG. 1) between the light emitting structure 20 and the first electrode 52 and the second electrode 54. Do not raise. Since the insulating portion 154 of the conductive adhesive layer 150 may insulate the first electrode 52 from the light emitting structure 20 and the conductive layer 30, the fourth embodiment omits the formation of the insulating layer 40. The manufacturing process can be simplified.

8 illustrates a light emitting device package 500 according to the sixth embodiment. The same reference numerals as those in FIGS. 1, 3, and 6 denote the same components, and the descriptions overlapping with the above description will be omitted or briefly described.

Referring to FIG. 8, the light emitting device package 500 may include the light emitting device 120, the support substrate 310, the first connection electrode part 320, the second connection electrode part 330, and the first adhesive part 312. The second adhesive part 314, the package body 110, the first bump part 130, the second bump part 140, and the conductive adhesive layer 150 are included.

The light emitting device 120, the package body 110, the first bump part 130-1, the second bump part 140-1, and the conductive adhesive layer 150 have the structures described above with reference to FIGS. 1 and 3. May be the same.

The support substrate 310 is disposed between the light emitting element 120 and the package body 110. The first connection electrode part 320 and the second connection electrode part 330 are spaced apart from each other on the support substrate 310.

The first connection electrode part 320 is electrically connected to the first electrode 52 of the light emitting device 120, and the second connection electrode part 330 is electrically connected to the second electrode 54 of the light emitting device 120. Is connected.

The first connection electrode part 320 includes a first connection part 322, a third via 326, and a second connection part 324. The first connector 322 is disposed on one surface of the support substrate 310 facing the first electrode 52, and the second connector 324 is the other surface of the support substrate 310 facing the package body 110. The third via 326 penetrates through the support substrate 310 to connect the first connector 322 and the second connector 326.

The second connection electrode part 330 includes a third connection part 332, a fourth via 336, and a fourth connection part 334. The third connector 332 is disposed on one surface of the support substrate 310 facing the second electrode 54, and the fourth connector 334 is the other surface of the support substrate 310 facing the package body 110. The fourth via 336 penetrates through the support substrate 310 to connect the third connector 332 and the fourth connector 336.

The first adhesive part 312 is disposed between the first electrode 52 and the first connection electrode part 320, and electrically connects the first electrode 52 and the first connection electrode part 320 to each other. For example, the first adhesive part 312 may be disposed between the first electrode 52 and the first connection part 322, and may electrically connect the first electrode 52 and the first connection part 322 to each other.

The second adhesive part 314 is disposed between the second electrode 54 and the second connection electrode part 330, and electrically connects the second electrode 54 and the second connection electrode part 330 to each other. For example, the second adhesive part 314 may be disposed between the second electrode 54 and the second connection part 332 and may electrically connect the second electrode 54 and the second connection part 332 to each other.

The first adhesive portion 312 and the second adhesive portion 314 may be eutectic metals such as Au / Sn, Ni / Cu, Pb / Sn, Au / Ge, Au / Sn / Ge, Au / Pb / Sn, Cu / Pb / Sn, and the like.

The conductive adhesive layer 150 is disposed between the support substrate 310 and the package body 110, and adheres the support substrate 310 and the package body 110 to each other. The conductive adhesive layer 150 electrically connects the first connection electrode part 320 and the first bump part 130, and electrically connects the second connection electrode part 330 and the second bump part 140.

For example, the conductive adhesive layer 150 may electrically connect the second connector 324 and the first bumps 132 and electrically connect the fourth connector 334 and the second bumps 142.

In the sixth embodiment, heat dissipation efficiency may be improved by the first connection electrode part 320 and the second connection electrode part 330. In addition, the sixth embodiment may improve the physical and structural stability of the light emitting device package by the support substrate 310 inserted between the package body 110 and the light emitting device 120. In the sixth embodiment, the substrate 10 is removed and a light extraction pattern is formed in the first conductivity type semiconductor layer 22, but is not limited thereto, and the substrate is disposed on the first conductivity type semiconductor layer 22. It may include.

9 to 15 show a method of manufacturing a light emitting device package according to the embodiment. As shown in FIG. 9, the light emitting structure 20 is formed on the growth substrate 10.

The light emitting structure 20 may be formed by sequentially growing the first conductive semiconductor layer 22, the active layer 24, and the second conductive semiconductor layer 26 on the growth substrate 10. The light emitting structure 140 may include, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), and molecular beam growth. It may be formed using a method such as Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), but is not limited thereto.

In addition, a mesa etch is performed to remove a portion of the second conductive semiconductor layer 26, the active layer 24, and the first conductive semiconductor layer 22 to form the first conductive semiconductor layer 22. Expose one area. Mesa etching may be a dry etching or the like.

Next, as shown in FIG. 10, the conductive layer 30 is formed on the second conductive semiconductor layer 26. The first sub-electrode 52a is formed on the first conductivity-type semiconductor layer 22 exposed by mesa etching. The conductive layer 30 and the first sub-electrode 52a may be formed by electron beam (E-beam) deposition, sputtering, plasma enhanced chemical vapor deposition (PECVD), or the like.

Next, as shown in FIG. 11, the insulating layer 40 is formed on the light emitting structure 120, the conductive layer 30, and the first sub-electrode 52a. The insulating layer 40 is etched to form a first opening 40a exposing the first sub-electrode 52a and a second opening 40b exposing a portion of the conductive layer 30.

Next, as shown in FIG. 12, a second sub-electrode 52b connected to the first sub-electrode 52a through the first opening 40a is formed on the insulating layer 40, and the second opening ( A second electrode 54 connected to the conductive layer 330 is formed through 40b). In this case, the first sub-electrode 52a and the second sub-electrode 52b may form the first electrode 52, and the first electrode 52 and the second electrode 54 may be patterned to be electrically separated from each other.

 Next, as shown in FIG. 13, the package body 110 to be electrically connected to the first electrode 52 and the second electrode 54 is prepared. First via holes 412 and second via holes 414 are formed in the package body 110.

Next, as shown in FIG. 14, the first via holes 412 and the second via holes 414 are filled with a metal material to form the first via 136 and the second via 146, and the first via. A first metal layer 134 connected to the 136 and a second metal layer 144 connected to the second via 146 are formed on the package body 110. The first and second vias 136 and 146 and the first and second metal layers 134 and 144 may be formed by sputtering or deposition.

The first bump layer 132 is formed on the first metal layer 134, and the second bump layer 142 is formed on the second metal layer 144. For example, the first bump layer 132 is formed on the first metal layer 134 and the second bump layer 142 is formed on the second metal layer 144 using a stud bump forming process. Can be.

A stud bump refers to having a wire or stud (reference 430 in FIG. 13) of a certain length (or height) on the compression ball (reference numeral 420 in FIG. 13) pressed onto the pad of the die. The stud bumps can be formed by wire bonding devices or bump bonding devices.

Next, as shown in FIG. 15, the conductive adhesive layer 150 is disposed between the light emitting device 120 and the package body 110, and the light emitting device 120 and the package body 110 are bonded by applying heat and pressure. The first bump layer 132 is electrically connected to the first bump layer 132 by the conductive particles 152, and the second bump layer 142 is electrically connected to the second electrode 54.

Another embodiment may be implemented as a display device, an indicator device, and an illumination system including the light emitting device package described in the above embodiments.

16 is an exploded perspective view of a lighting apparatus including a light emitting device package according to an embodiment. Referring to FIG. 16, the lighting apparatus according to the embodiment includes a light source 750 for projecting light, a housing 700 in which the light source 7500 is embedded, a heat dissipation unit 740 for dissipating heat from the light source 750, and a light source. The holder 760 couples the 750 and the heat dissipation part 740 to the housing 700.

The housing 700 includes a socket coupling portion 710 coupled to an electric socket (not shown), and a body portion 730 connected to the socket coupling portion 710 and having a light source 750 embedded therein. One air flow hole 720 may be formed through the body portion 730.

A plurality of air flow holes 720 are provided on the body portion 730 of the housing 700 and one or more air flow holes 720 may be provided. The air flow port 720 may be disposed radially or in various forms on the body portion 730.

The light source 750 includes a plurality of light emitting device packages 752 provided on the substrate 754. [ The substrate 754 may have a shape that can be inserted into the opening of the housing 700 and may be made of a material having a high thermal conductivity to transmit heat to the heat dissipating unit 740 as described later. The plurality of light emitting device packages may be any one of the above-described embodiments.

A holder 760 is provided below the light source 750, and the holder 760 may include a frame and other air flow holes. Although not shown, an optical member may be provided under the light source 750 to diffuse, scatter, or converge light projected from the light emitting device package 752 of the light source 750.

17A illustrates a display device including a light emitting device package according to an exemplary embodiment, and FIG. 17B is a cross-sectional view of a light source portion of the display device illustrated in FIG. 17A.

17A and 17B, the display device includes a backlight unit, a liquid crystal display panel 860, a top cover 870, and a fixing member 850.

The backlight unit includes a bottom cover 810, a light emitting module 880 provided at one side of the bottom cover 810, a reflecting plate 820 disposed at the front of the bottom cover 810, and a reflecting plate ( The light guide plate 830 is disposed in front of the light guide module 880 to guide the light emitted from the light emitting module 880 to the front of the display device, and the optical member 840 is disposed in front of the light guide plate 30. The liquid crystal display 860 is disposed in front of the optical member 840, the top cover 870 is provided in front of the liquid crystal display panel 860, and the fixing member 850 is provided with the bottom cover 810 and the top cover. Disposed between 870 to fix bottom cover 810 and top cover 870 together.

The light guide plate 830 serves to guide the light emitted from the light emitting module 880 to be emitted in the form of a surface light source, and the reflective plate 820 disposed behind the light guide plate 830 may emit light emitted from the light emitting module 880. The light guide plate 830 is reflected in the direction to increase the light efficiency. However, the reflective plate 820 may be provided as a separate component as shown in the figure, or may be provided in the form of a high reflectivity coating on the back of the light guide plate 830, or the front of the bottom cover 810. . Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 830 scatters the light emitted from the light emitting module 880 so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE).

An optical member 840 is provided on the light guide plate 830 to diffuse light emitted from the light guide plate 830 at a predetermined angle. The optical member 840 uniformly radiates the light guided by the light guide plate 830 toward the liquid crystal display panel 860. As the optical member 840, an optical sheet such as a diffusion sheet, a prism sheet, or a protective sheet may be selectively laminated, or a micro lens array may be used. In this case, a plurality of optical sheets may be used, and the optical sheets may be made of a transparent resin such as acrylic resin, polyurethane resin, or silicone resin. The fluorescent sheet may be included in the above-described prism sheet as described above.

The liquid crystal display panel 860 may be provided on the front surface of the optical member 840. Here, it is obvious that other types of display devices requiring a light source besides the liquid crystal display panel 860 may be provided. The reflective plate 820 is placed on the bottom cover 810, and the light guide plate 830 is placed on the reflective plate 820. Thus, the reflector plate 820 may be in direct contact with the heat radiation member (not shown). The light emitting module 880 includes a light emitting device package 882 and a printed circuit board 881. The light emitting device package 882 is mounted on the printed circuit board 881. The light emitting device package 881 may be any one of the above-described embodiments.

The printed circuit board 881 may be bonded on the bracket 812. Here, the bracket 812 is made of a material having high thermal conductivity for heat dissipation in addition to the fixing of the light emitting device package 882, and although not shown, a thermal pad is provided between the bracket 812 and the light emitting device package 882. To facilitate heat transfer. In addition, the bracket 812 is provided as a 'b' type as shown, the horizontal portion 812a is supported by the bottom cover 810, the vertical portion 812b is fixed to the printed circuit board 881 can do.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

10: substrate 20: light emitting structure
22: first conductive semiconductor layer 24: active layer
26: second conductive semiconductor layer 30: conductive layer
40: insulating layer 52: first electrode
54: second electrode 110: package body
120: light emitting element 130: first bump part
132: first bump layer 134: first metal layer
136: first via 140: second bump portion
142: first bump layer 144: second metal layer
146: second via 150: conductive adhesive layer
160: light extraction pattern 310: support substrate
312: first bonding portion 314: second bonding portion
320: first connection electrode part 330: second connection electrode part.

Claims (14)

Package body;
A light emitting device including a light emitting structure, a first electrode, and a second electrode;
A first bump part and a second bump part spaced apart from each other on one surface of the package body; And
And a conductive adhesive layer disposed between the package body and the light emitting device, the conductive adhesive layer electrically connecting the first electrode and the first bump part and electrically connecting the second electrode and the second bump part. The method of claim 1, wherein the first bump portion and the second bump portion,
A light emitting device package comprising a stud bump. The method of claim 1, wherein the conductive adhesive layer,
A light emitting device package which is an anisotropic conductive film (ACF) or an anisotropic conductive adhesive (ACA). The method of claim 1,
The first bump part,
A first metal layer disposed on an upper surface of the package body;
A first bump layer disposed on the first metal layer to face the first electrode; And
A first via connected to the first metal layer and penetrating through the package body to be exposed to a bottom surface of the package body,
The second bump part,
A second metal layer disposed on an upper surface of the package body;
A second bump layer disposed on the second metal layer to face the second electrode; And
And a second via connected to the second metal layer and exposed through the package body to the bottom surface of the package body. 5. The method of claim 4,
The first bump layer includes a plurality of first bumps spaced apart from each other, and the second bump layer includes a plurality of second bumps spaced apart from each other. The method of claim 5,
And the first bumps are aligned with the first via in a vertical direction and the second bumps are aligned with the second via in a vertical direction, wherein the vertical direction is a direction from the light emitting device to the package body. The method of claim 5,
The first bumps are symmetrically disposed on the first metal layer with respect to the first via, and the second bumps are symmetrically disposed on the second metal layer with respect to the second via. . The method of claim 1, wherein the conductive adhesive layer,
An insulation unit for adhering the light emitting element to the package body;
It includes a plurality of conductive particles included in the insulating portion,
The distance between the first bump layer and the second bump layer is greater than the size of the conductive particles light emitting device package. The method of claim 1,
A support substrate disposed between the light emitting element and the package body;
A first connection electrode part provided on the support substrate electrically connected to the first electrode; And
Further comprising a second connection electrode portion provided on the support substrate electrically connected to the second electrode,
The conductive adhesive layer,
And a light emitting device package disposed between the support substrate and the package body to electrically connect the first connection electrode part and the first bump part, and electrically connect the second connection electrode part and the second bump part. 10. The method of claim 9,
A first adhesive part for bonding and electrically connecting the first electrode and the first connection electrode part; And
The light emitting device package further comprises a second adhesive part for bonding and electrically connecting the second electrode and the second connection electrode part. The method of claim 1, wherein the first electrode and the second electrode,
The light emitting device package disposed on one surface of the light emitting structure facing the package body. The method of claim 11,
The light emitting device package is formed with a light extraction pattern on the opposite side of the one surface of the light emitting structure. The method of claim 11,
The light emitting device package further comprises a translucent substrate disposed on the opposite side of the one surface of the light emitting structure. The method of claim 1,
The light emitting device package of claim 1, wherein one surface of the package body on which the first bump part and the second bump part are disposed is flat.
KR1020110048866A 2011-05-24 2011-05-24 A light emitting device package KR101824034B1 (en)

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