KR101823730B1 - Rapidly disposable memory with water-soluble substrate and manufacturing method thereof - Google Patents

Abstract

A memory using a water-soluble substrate comprises: a substrate formed of a water-soluble material; A lower electrode formed on the substrate; An upper electrode formed on the lower electrode; And an insulating layer disposed between the lower electrode and the upper electrode and generating or destroying electrical paths according to an electric field applied between the lower electrode and the upper electrode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a disposable memory using a water-

The present invention relates to a disposable memory using a water-soluble substrate, and more specifically, by constructing a memory such that the solubility in water includes a water-soluble substrate having a solubility higher than a preset solubility, a memory is manufactured so as to be rapidly discarded with a small amount of water Lt; / RTI >

Recently, as the Internet of Things (IOT) has arrived, network connections between all objects have become possible, and research on electronic devices capable of physical disposal has received great interest. Particularly, in the case of a memory storing data among electronic devices, since it is vulnerable to security, faster disposal is required.

Such conventional electronic devices are disadvantageous in that they are disadvantageous in that they are disadvantageous in that they are disadvantageous in that they are disadvantageously complicated and disadvantageous in physical disposal.

Therefore, in the case of a memory storing existing data, there is a problem that it is difficult to instantaneously dispose of the memory at the time of necessity of security enhancement.

Accordingly, the present invention proposes a memory having a simple structure so as to be discarded at a low cost and a technique for manufacturing the same.

Embodiments of the present invention provide a memory which is manufactured so that a substrate can be formed of a water-soluble material having a predetermined solubility or higher so that it can be rapidly discarded in a small amount of water within several tens of seconds.

In more detail, embodiments of the present invention include forming a substrate with a water-soluble material, forming a lower electrode and an upper electrode using a printing process, and forming an electrical path in accordance with an electric field applied between the upper electrode and the lower electrode And an insulating film is disposed between the upper electrode and the lower electrode.

According to one embodiment of the present invention, a memory using a water-soluble substrate comprises a substrate formed of a water-soluble material; A lower electrode formed on the substrate; An upper electrode formed on the lower electrode; And an insulating layer disposed between the lower electrode and the upper electrode and generating or destroying electrical paths according to an electric field applied between the lower electrode and the upper electrode.

The water-soluble substance forming the substrate may include at least one of a solid sodium / glycerin mixture or a water-soluble polymer substance having a solubility predetermined for water.

The water-soluble polymer material may include at least one of PVA (polyvinyl alcohol), PAM (polyacryamide), polyvinyl pyrrolidone, and silk fibroin.

The substrate can be dissolved by water vapor or water.

The lower electrode and the upper electrode may be formed using a printing process based on a liquid metal material so as to have predetermined conductivity.

The printing process may include at least one of an inkjet printing technique or a screen printing technique.

The insulating layer may be formed of a metal oxide or a polymer material using a deposition process so as to have a preset nano thickness on the lower electrode.

,

,

,

,

,

또는

중 적어도 어느 하나를 포함하고, 상기 고분자 물질은 PEGDMA(polyethyleneglycol dimethacrylate),

, chalcogenide, polyphenylactylene 또는 Poly 중 적어도 어느 하나를 포함할 수 있다.The metal oxide material

,

,

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or

Wherein the polymer material is at least one selected from the group consisting of PEGDMA (polyethyleneglycol dimethacrylate)

, chalcogenide, polyphenylacetylene, or poly.

The deposition process may be an Atomic Layer Deposition (ALD) technique.

The memory may be a resistive switching random access memory (RRAM) operating according to a filament mechanism of a Fuse / Anti-Fuse scheme or a mechanism of an ionic diffusion or electronic diffusion scheme.

The memory may be implemented by Schottky emission in the HRS (High Resistance State), Fowler-Nordheim tunneling from the cathode to the conduction band, direct tunneling direct tunneling method, a tunneling method from a cathode to a trap, a discharge method from a trap to a conduction band, a Poole-Frenkel discharge method, a Fowler-to-conduction band from a trap to a conduction band A tunneling method from a trap to an anode, a tunneling method from a trap to an anode, or a current-voltage method based on a space charge limited current characteristic can be used.

The memory may utilize a linear current-voltage relationship scheme in the LRS (Low Resistance State) as a method of conducting the insulating film.

The memory may be a memristor that causes a hysteresis phenomenon using an alternating current (AC) whose voltage varies with time.

According to an embodiment of the present invention, a memory fabrication method using a water-soluble substrate includes: forming a substrate with a water-soluble material; Forming a lower electrode on the substrate; Disposing an insulating film on the lower electrode; And forming an upper electrode on the insulating layer, wherein an electrical path is formed or destroyed in the insulating layer according to an electric field applied between the lower electrode and the upper electrode.

Embodiments of the present invention can provide a memory which is manufactured so that a substrate can be formed of a water-soluble material having a predetermined solubility or higher, and can be rapidly discarded in a small amount of water within several tens of seconds.

In more detail, embodiments of the present invention include forming a substrate with a water-soluble material, forming a lower electrode and an upper electrode using a printing process, and forming an electrical path in accordance with an electric field applied between the upper electrode and the lower electrode By arranging the insulating film between the upper electrode and the lower electrode, a memory can be manufactured.

Accordingly, embodiments of the present invention provide a memory having a structure capable of low-cost disposal through a simple process by forming a substrate with a water-soluble material and forming a lower electrode and an upper electrode using a printing process instead of a mask process . Accordingly, embodiments of the present invention can implement a high security function as a data storage device by providing a discardable memory.

Further, embodiments of the present invention can provide a memory with low power consumption by forming an insulating film so that an electric path is generated at a specific voltage (electric field) and the electric path is eliminated at a relatively low voltage.

BRIEF DESCRIPTION OF THE DRAWINGS Figs. 1A-1B illustrate a memory according to one embodiment.
2A is a diagram illustrating a process of discarding a memory according to an embodiment of the present invention.
FIG. 2B illustrates solubility of a substrate according to an embodiment of the present invention. FIG.
3A and 3B are diagrams for explaining operations of a memory according to an embodiment.
4 is a diagram illustrating a current-voltage characteristic of a memory according to an embodiment.
5 is a flowchart showing a memory fabrication method according to an embodiment.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. In addition, the same reference numerals shown in the drawings denote the same members.

Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.

BRIEF DESCRIPTION OF THE DRAWINGS Figs. 1A-1B illustrate a memory according to one embodiment.

Specifically, FIG. 1A is a perspective view showing a memory according to an embodiment, and FIG. 1B is a sectional view showing the memory shown in FIG. 1A.

1A and 1B, a memory 100 according to an exemplary embodiment includes a substrate 110, a lower electrode 120, an insulating layer 130, and an upper electrode 140.

The substrate 110 is formed with a predetermined thickness (for example, a very small thickness in micro or nanoseconds) so as to be easily dissolved in water or water vapor by a water-soluble substance having a predetermined solubility or more with respect to water (or water vapor).

For example, the substrate 110 may be formed of a water soluble material comprising at least one of a solid sodium / glycerin mixture (e.g., solid sodium / glycerin, commonly referred to as paper soap) or a water soluble polymeric material having a predetermined solubility or higher. Here, the water-soluble polymer material may include at least one of PVA (polyvinyl alcohol), PAM (polyacryamide), polyvinyl pyrrolidone, or silk fibroin.

The lower electrode 120 formed on the substrate 110 may be printed on a liquid metal material so as to have a predetermined conductivity (for example, a high electric conductivity such that a high electric field is applied to the insulating film 130 with a small voltage without voltage loss) Process. ≪ / RTI >

For example, the lower electrode 120 may be formed of Ag using a printing process based on liquid Ag so as to have predetermined conductivity. At this time, at least one of an inkjet printing technique or a screen printing technique may be used to form various types of micro-sized electrodes in the printing process.

An insulating layer 130 disposed between the lower electrode 120 and the upper electrode 140 to be described later is formed to have a predetermined nano thickness (an electric path is generated at a specific voltage and relatively Or may be formed of at least one of a metal oxide material or a polymer material by using a deposition process (in order to allow the electrical path to be extinguished at a low voltage).

,

,

,

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또는

중 적어도 어느 하나를 포함하는 금속 산화 물질로 형성되거나, PEGDMA(polyethyleneglycol dimethacrylate),

, chalcogenide, polyphenylactylene 또는 Poly 중 적어도 어느 하나를 포함하는 고분자 물질로 형성될 수 있다.For example, the insulating layer 130 may be formed on the lower electrode 120 to have a predetermined nano thickness using atomic layer deposition (ALD)

,

,

,

,

,

or

(PEGDMA) (polyethyleneglycol dimethacrylate), and the like.

, chalcogenide, polyphenylacetylene, or poly.

Thus, in the insulating film 130 thus formed, the electrical path can be created or destroyed according to the electric field applied between the lower electrode 120 and the upper electrode 140.

The upper electrode 140 formed on the insulating layer 130 may have a predetermined conductivity (for example, a high voltage such that a high electric field is applied to the insulating layer 130 with a small voltage without voltage loss, Conductivity) based on the liquid metal material.

The memory 100 having such a structure may be a resistive switching random access memory (RRAM) operating according to a filament mechanism of a Fuse / Anti-Fuse scheme or a mechanism of an ionic diffusion or electronic diffusion scheme.

Therefore, the memory 100 can perform a Schottky emission method in the HRS (High Resistance State), a Fowler-Nordheim method in the conduction band from the cathode, A direct tunneling method, a tunneling method through a trap from a cathode, a discharge method from a trap to a conduction band, a full-flake discharge method, At least one of a Fowler-Nordheim tunneling method, a tunneling method from a trap to a trap, a tunneling method from a trap to an anode, or a current-voltage method based on a space charge limited current characteristic And a linear current-voltage relationship scheme can be used as a conduction method of the insulating film 130 in LRS (Low Resistance State).

In addition, the memory 100 may be a memristor that causes a hysteresis phenomenon using alternating current (AC) whose voltage varies with time.

As described above, the memory 100 includes a substrate 110 formed of a water-soluble material, and includes a lower electrode 120 and an upper electrode 140 formed using a printing process instead of the mask process, So that it can be manufactured at a low cost. Thus, since the memory 100 having the above-described structure can be quickly discarded with a small amount of water or water vapor, a high security function as a data storage device can be realized. The specific procedure by which the memory 100 is dissolved by water or water vapor and discarded will be described with reference to FIGS. 2A and 2B.

Also, the memory 100 is manufactured to include the insulating film 130 in which an electric path is generated at a specific voltage (electric field) and the electric path is extinguished at a relatively low voltage, thereby reducing power consumption during driving.

FIG. 2A is a view showing a process of disposing a memory according to an embodiment, and FIG. 2B is a view illustrating solubility of a substrate according to a water temperature according to an embodiment.

Referring to FIGS. 2A and 2B, a memory according to one embodiment includes a substrate formed of a water-soluble material so that it can be dissolved by water or water vapor.

For example, when the memory is exposed to water having a water temperature of 37 ° C as shown in FIG. 2A, the substrate included in the memory is completely dissolved in 10 seconds to be disintegrated into small pieces, so that the metal electrodes are all cut off and can no longer be used as a data storage device Is discarded.

At this time, the solubility of the memory according to the water temperature of the water is as shown in FIG. 2B. For example, a memory can be dissolved in 30 seconds at room temperature (25 ° C), and dissolve in 10 seconds at a temperature close to body temperature (37 ° C).

3A and 3B are diagrams for explaining operations of a memory according to an embodiment.

Referring to FIGS. 3A and 3B, the memory 300 according to an embodiment operates in energization in the LRS and energization in the HRS. The conductive filament path formed by the metal ions supplied from the upper electrode 320 and the lower electrode 330 is described below as a method of conducting the insulating film 310 included in the memory 300. However, And various energizing methods can be used.

3A, when the (-) electrode is applied to the upper electrode 320 included in the memory 300, metal ions from the upper electrode 320 to the lower electrode 330 are collected at a specific voltage, A conductive filament capable of rapidly flowing a current is formed inside the insulating film 310. At this time, the resistance value of the insulating film 310 is sharply reduced to become the low resistance state LRS.

3 (b), when the (+) electrode is applied to the upper electrode 320 included in the memory 300, the metal ions formed from the upper electrode 320 to the lower electrode 330 at a specific voltage The conductive filament is removed from the inside of the insulating film 310. At this time, the current is abruptly reduced, and the resistance value of the insulating film 310 is rapidly increased to become HRS which is in a high resistance state.

3A through 3B, the memory function is changed through two state changes (for example, Set: '1' and Reset: '0'), which is a resistance value change in accordance with a current change in the insulating film 310 Can be implemented. Here, the resistance state of the insulating film 310 is nonvolatile, which is not changed without a voltage (electric field) applied from the outside, and the states thereof are maintained while being set and reset respectively.

4 is a diagram illustrating a current-voltage characteristic of a memory according to an embodiment.

Referring to FIG. 4, in the memory according to an exemplary embodiment, as the (-) voltage increases, an electrical path is formed in the insulating film under a specific voltage, and the current in the insulating film rapidly increases to change from HRS to LRS. This state means a data write state.

On the contrary, as the (+) voltage increases, the electric path is destroyed in the insulating film under a specific voltage, and the conductive filament in the insulating film is cut off, and the current is rapidly reduced and changed from LRS to HRS. This state means a data erase state.

According to one embodiment of the present invention, a substrate formed of a water-soluble material, a lower electrode and an upper electrode formed using a printing process, and an electrical path at a specific voltage (electric field) are generated and an electrical path is eliminated at a relatively low voltage The memory including the insulating film may have a memory function as a data device.

5 is a flowchart showing a memory fabrication method according to an embodiment.

Referring to FIG. 5, a memory fabrication apparatus according to one embodiment forms a substrate with a water-soluble material (510).

At this time, the memory fabrication apparatus can form the substrate with a predetermined thickness so as to be easily dissolved in water or water vapor by a water-soluble substance having a predetermined solubility or more with respect to water or water vapor. For example, the memory fabrication apparatus may be a solid sodium / glycerin mixture (e.g., solid sodium / glycerin, commonly referred to as paper soap) or a water soluble polymeric material (PVA, PAC, polyvinyl pyrrolidone, Or silk fibroin) can be used to form the substrate.

Subsequently, the memory fabrication apparatus forms a lower electrode on the substrate (520).

Here, the memory fabrication apparatus may form the lower electrode using a printing process based on the liquid metal material so as to have predetermined conductivity. For example, the memory fabrication apparatus may be fabricated using at least one of an inkjet printing technique or a screen printing technique based on a liquid metal material so as to form various types of micro-sized electrodes. The lower electrode can be formed so as to have a predetermined conductivity (a high electric field is applied to the insulating film with a small voltage without voltage loss).

Next, the memory fabrication apparatus disposes the insulating film (the insulating film is formed or destroyed in accordance with the electric field applied between the lower electrode and the upper electrode) on the lower electrode (530).

,

,

,

,

,

또는

중 적어도 어느 하나를 포함하는 금속 산화 물질로 절연막을 형성하거나, PEGDMA(polyethyleneglycol dimethacrylate),

, chalcogenide, polyphenylactylene 또는 Poly 중 적어도 어느 하나를 포함하는 고분자 물질로 절연막을 형성할 수 있다.At this time, the memory fabrication apparatus may be fabricated using at least one of a metal oxide material or a polymeric material using a deposition process so as to have a predetermined nano thickness (to create an electrical path at a specific voltage and to eliminate electrical path at a relatively low voltage) An insulating film can be formed. For example, a memory fabrication device may be fabricated using atomic layer deposition (ALD) techniques to have a predetermined nano thickness

,

,

,

,

,

or

(PEGDMA) (polyethyleneglycol dimethacrylate), and the like.

, chalcogenide, polyphenylacetylene, or poly, may be used to form the insulating layer.

Thereafter, the memory fabrication apparatus forms an upper electrode on the insulating film (540).

Here, the memory fabrication apparatus may form the upper electrode using a printing process based on the liquid metal material so as to have predetermined conductivity. For example, a memory fabrication device may be fabricated to have predetermined conductivity using at least one of the inkjet printing technique or the frontal printing technique based on a liquid metal material (without voltage loss So that a high electric field is applied to the insulating film with a small voltage).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (10)

In a memory using a water-soluble substrate,
A substrate formed of a water-soluble material;
A lower electrode formed on the substrate;
An upper electrode formed on the lower electrode; And
An insulating layer disposed between the lower electrode and the upper electrode and being used as a resistive layer having two state changes in the memory due to the generation or disappearance of an electrical path in accordance with an electric field applied between the lower electrode and the upper electrode,
/ RTI >
The lower electrode and the upper electrode
And is formed using a printing process based on a liquid metal material so as to have a predetermined conductivity,
The water-soluble material forming the substrate
Wherein the substrate comprises a solid sodium / glycerin mixture such that the substrate dissolves within 30 seconds of water having a temperature equal to room temperature or water having a temperature equal to body temperature. delete delete delete The method according to claim 1,
The insulating film
Wherein the lower electrode is formed of at least one of a metal oxide material and a polymer material using a deposition process so as to have a preset nano thickness. The method of claim 1, wherein
The memory
Wherein the memory is a resistive switching random access memory (RRAM) operating according to a fuse / anti-fuse filament mechanism or a mechanism of ionic diffusion or electronic diffusion. The method of claim 6, wherein
The memory
A Schottky emission method, a Fowler-Nordheim tunneling method from a cathode to a conduction band, a direct tunneling method, a direct tunneling method, a direct tunneling method, Fowler-Nordheim from the trap to the conduction band, the tunnel through the trap from the cathode, the discharge from the trap to the conduction band, the Poole-Frenkel discharge method, Wherein at least one of a tunneling method, a tunneling method from a trap to a trap, a tunneling method from a trap to an anode, or a current-voltage method based on a space charge limited current characteristic is used. The method of claim 6, wherein
The memory
Wherein a linear current-voltage relationship scheme is used in the LRS (Low Resistance State) in which the insulating film is energized. The method according to claim 1,
The memory
A memory that is a memristor that causes a hysteresis phenomenon using an alternating current (AC) whose voltage varies with time. A memory fabrication method using a water-soluble substrate,
Forming a substrate with a water-soluble material;
Forming a lower electrode using a printing process based on a liquid metal material so as to have a predetermined conductivity on the substrate;
Disposing an insulating film on the lower electrode; And
Forming an upper electrode on the insulating layer using the printing process based on the liquid metal material so as to have the predetermined conductivity,
Lt; / RTI >
The insulating film
An electric path is generated or destroyed according to an electric field applied between the lower electrode and the upper electrode, thereby being used as a resistance layer having two state changes in the memory,
The water-soluble material forming the substrate
Wherein the substrate comprises a solid sodium / glycerin mixture such that the substrate dissolves within 30 seconds of water having a temperature equal to room temperature or water having a temperature equal to body temperature.

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