KR101818907B1 - Organic light emitting device, method for manufacturing organic light emitting device, and method for repairing of organic light emitting device - Google Patents

Abstract

The present invention provides an organic light emitting device, a method of manufacturing an organic light emitting device, and a method of repairing an organic light emitting device.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting device, a method of manufacturing the organic light emitting device, and a method of repairing the organic light emitting device.

The present application claims the benefit of priority based on Korean Patent Application No. 10-2014-0167829 filed with the Korean Intellectual Property Office on Nov. 27, 2014, and all contents disclosed in the Korean patent application are incorporated herein by reference .

The present invention provides an organic light emitting device, a method of manufacturing an organic light emitting device, and a method of repairing an organic light emitting device.

An organic light emitting phenomenon is a phenomenon that converts electric energy into light energy by using an organic material. That is, when a suitable organic compound layer is placed between the anode and the cathode, when a voltage is applied between the two electrodes, holes are injected in the anode and electrons are injected into the organic compound layer in the cathode. When the injected holes and electrons meet, an exciton is formed, and when the exciton falls back to the ground state, it generates light.

Since the distance between the anode and the cathode is small, the organic light emitting element tends to have short-circuit defects. The anode and the cathode may be in direct contact with each other due to pinholes, cracks, step in the structure of the organic light emitting device, and roughness of the coating, or the thickness of the organic layer may be made thinner in these defect regions. These defective regions provide a low-resistance path to allow current to flow, so that no current flows through the organic light emitting element at all or in extreme cases. As a result, the light emission output of the organic light emitting element is reduced or eliminated. In multi-pixel display devices, short-circuit defects do not emit light, or they can create dead pixels that emit light below average light intensity and degrade the display quality. For illumination or other low-resolution applications, a significant fraction of the area may not work due to short-circuit faults. Because of concerns about short-circuit defects, the fabrication of organic light-emitting devices is typically performed in a clean room. However, even a clean environment can not be effective in eliminating short circuit faults. In many cases, the thickness of the organic layer is increased more than is actually necessary to operate the device, in order to increase the spacing between the two electrodes to reduce the number of short-circuit defects. This method adds cost to the fabrication of the organic light emitting device, and even such a method can not completely eliminate short circuit defects.

The present invention provides an organic light emitting device, a method of manufacturing an organic light emitting device, and a method of repairing an organic light emitting device. Specifically, the present specification provides an organic light emitting device having a short-circuit defect region removed, and a method of manufacturing the same, and further provides a repair method of an organic light emitting device including a short-circuit defect region.

One embodiment of the present disclosure includes a lower electrode; An upper electrode facing the lower electrode; And one or more organic layers disposed between the lower electrode and the upper electrode, wherein the upper electrode is a metal electrode containing Ag, and the upper electrode is exposed to the organic layer or the lower electrode And at least one exposed portion is provided.

One embodiment of the present disclosure provides a method of manufacturing a semiconductor device, comprising: preparing a lower electrode; Forming at least one organic material layer on the lower electrode; Forming an upper electrode on the organic material layer; And forming an exposed portion by removing at least one region of the upper electrode including a short-circuit defect region by connecting the lower electrode and the upper electrode to an external power source and applying a reverse voltage thereto, The present invention also provides a method of manufacturing an organic light emitting device including the metal electrode.

One embodiment of the present invention includes a lower electrode, an upper electrode disposed opposite to the lower electrode, and at least one organic layer provided between the lower electrode and the upper electrode, wherein the upper electrode includes a metal electrode Preparing an organic light-emitting device comprising: Connecting an external power source to the OLED; And applying an inverse voltage to the organic light emitting device to form an exposed portion by removing at least one region of the upper electrode including the short circuit defect region.

One embodiment of the present invention provides a display device including the organic light emitting device.

One embodiment of the present invention provides a lighting apparatus including the organic light emitting element.

The organic light emitting diode according to one embodiment of the present invention can minimize the problems of the performance and the shortening of the lifetime of the organic light emitting diode due to the leakage current due to the elimination of the short circuit defect region.

The organic light emitting device according to one embodiment of the present invention includes a metal electrode including Ag to realize high efficiency.

The method of repairing an organic light emitting diode according to an embodiment of the present invention can repair a short-circuit defect region of an organic light emitting diode by a simple method.

1 and 2 are cross-sectional views of an organic light emitting device according to an embodiment of the present invention.
FIG. 3 shows an exposed region of an organic light emitting diode according to an embodiment of the present invention, and is an image of a microscope observed at an upper electrode side of the organic light emitting device.
FIG. 4 illustrates an exposed region and a light emitting state of the organic light emitting diode according to an embodiment of the present invention, and is an image of a microscope observed at the lower electrode side of the organic light emitting diode.
5 is an electron microscope image observed at the upper electrode side of the organic light emitting device according to one embodiment of the present invention.
6 is an electron microscope image of a section of the exposed region of the organic light emitting device according to one embodiment of the present invention.
FIG. 7 is a graph illustrating voltage-current density characteristics of organic light emitting devices according to Comparative Examples and Examples.

When a member is referred to herein as being "on " another member, it includes not only a member in contact with another member but also another member between the two members.

Whenever a component is referred to as "comprising ", it is to be understood that the component may include other components as well, without departing from the scope of the present invention.

Hereinafter, the present invention will be described in more detail.

One embodiment of the present disclosure includes a lower electrode; An upper electrode facing the lower electrode; And one or more organic layers disposed between the lower electrode and the upper electrode, wherein the upper electrode is a metal electrode containing Ag, and the upper electrode is exposed to the organic layer or the lower electrode And at least one exposed portion is provided.

According to one embodiment of the present invention, the exposed portion may be a region in which the lower organic layer or the lower electrode is exposed. According to an embodiment of the present invention, the exposed portion may refer to an area where the upper electrode is partially not provided. According to an embodiment of the present invention, the exposed portion may be a region where the upper electrode of the short-circuit defect region of the pixel portion of the organic light emitting diode is removed.

Since the organic material layer may be transparent or translucent, the lower electrode may be observed through the organic material layer.

According to an embodiment of the present invention, the organic layer in the exposed portion may have at least one region removed.

According to an embodiment of the present invention, the organic layer in the exposed portion may have an area corresponding to an area smaller than the exposed area.

According to an embodiment of the present invention, the thickness of the upper electrode in at least one region of the edge of the exposed portion may be 110% or more of the thickness of the upper electrode of the unexposed portion. Specifically, according to an embodiment of the present invention, the shape of the edge of the exposed portion including the exposed portion may be a crater or a caldera shape. According to an embodiment of the present invention, the shape of the edge of the exposed portion may be a shape in which the upper electrode penetrates from the lower electrode toward the upper electrode.

1 and 2 are cross-sectional views of an organic light emitting device according to an embodiment of the present invention. 1 and 2 illustrate an organic light emitting device in which a substrate 100, a lower electrode 200, an organic material layer 300 and an upper electrode 400 are sequentially formed. Fig.

According to one embodiment of the present invention, the shape of the exposed portion may be a circular shape, an elliptical shape, or a closed shape having a straight line and a curved line.

According to an embodiment of the present invention, the thickness of the organic layer in the exposed portion outside the removed region may be 110% or more of the thickness of the organic layer in the region outside the exposed portion.

According to an embodiment of the present invention, the shape of the removed organic layer may be circular, elliptical, or a closed shape having a straight line and a curved line.

According to an embodiment of the present invention, the content of Ag in the upper electrode may be 90 wt% or more of the total weight of the upper electrode.

According to an embodiment of the present invention, the upper electrode may be a metal electrode whose main material is Ag.

According to one embodiment of the present disclosure, the area corresponding to the exposed portion may be electrically disconnected. Specifically, the region of the organic light emitting device corresponding to the exposed portion may be a region including the short-circuit defect region, and the leakage current to the short-circuit defect region may be blocked by removing the upper electrode.

According to an embodiment of the present invention, the organic light emitting diode further includes a substrate, and the lower electrode may be provided on the substrate.

According to an embodiment of the present invention, the lower electrode means an electrode closer to the substrate than the upper electrode.

According to one embodiment of the present invention, the maximum diameter of the exposed portion may be 500 nm or more and 1 mm or less.

According to an embodiment of the present invention, the maximum diameter of the lower electrode exposed by the exposed portion may be 200 nm or more and 200 占 퐉 or less.

One embodiment of the present disclosure provides a method of manufacturing a semiconductor device, comprising: preparing a lower electrode; Forming at least one organic material layer on the lower electrode; Forming an upper electrode on the organic material layer; And forming an exposed portion by removing at least one region of the upper electrode including a short-circuit defect region by connecting the lower electrode and the upper electrode to an external power source and applying a reverse voltage thereto, The present invention also provides a method of manufacturing an organic light emitting device including the metal electrode.

The short circuit defect may be caused by a defect in the raw material of the organic light emitting diode due to a defect in the organic light emitting element raw material, excessive reduction in the thickness of the organic material layer between the lower electrode and the upper electrode during the manufacturing process or during use, This can occur if an electric field is applied. When a short circuit defect occurs, the resistance between the lower electrode and the upper electrode decreases, so that the current flowing to the steady region of the organic light emitting device decreases and the amount of leakage current flowing to the short circuit point can be increased. This may reduce the power efficiency of the organic light emitting device, and in some cases the organic light emitting device may not operate. In addition, if current flowing in a large area of organic matter is concentrated and flowed to a short circuit point, locally high heat is generated, which may cause fire or explosion.

The step of forming the exposed portion may prevent an electric path of a short-circuit defect region or a region where a short-circuit defect may occur, thereby preventing a degradation of performance of the organic light-emitting device due to a leakage current or inability to operate the organic light-

In the manufacturing method according to an embodiment of the present invention, the reverse voltage may be a voltage between an organic layer breakdown voltage of the short-circuit defect region and an organic layer breakdown voltage of the normal region.

The reverse voltage in the present specification is expressed by the absolute value (positive number) of the voltage for the convenience of expression.

The normal region may be a region that normally operates without a short circuit defect.

According to one embodiment of the present invention, the breakdown voltage of the organic material layer may mean a voltage at which the organic material layer fails to function when a voltage is applied from the cathode to the anode through the organic material layer in the reverse direction. Specifically, since the short-circuit defect region may be a region where the thickness of the organic material layer is thinner than the normal range, the absolute value of the organic material layer breakdown voltage may be smaller than the normal region.

According to one embodiment of the present invention, the organic layer breakdown voltage of the short-circuit defect region may be 18 V or more. Alternatively, according to one embodiment of the present disclosure, the breakdown voltage of the organic layer of the short-circuit defect region may be 20 V or more or 25 V or more.

According to one embodiment of the present disclosure, the breakdown voltage of the organic layer in the steady region may be 70 V or less, or 50 V or less. Specifically, according to an embodiment of the present invention, the breakdown voltage of the organic layer in the steady region may be 40 V or less.

In the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 18 V or more. Specifically, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 20 V or more and 25 V or more.

In addition, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 70 V or less, or 50 V or less. Specifically, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 40 V or less.

In the manufacturing method according to an embodiment of the present invention, the reverse voltage may be 18 V or more and 70 V or less. Specifically, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 20 V or more and 50 V or less.

According to one embodiment of the present disclosure, the reverse voltage may be a reverse pulse voltage.

According to an embodiment of the present invention, the pulse width of the reverse pulse voltage may be 10 ns or more and 10 ms or less. Specifically, according to an embodiment of the present invention, the pulse width of the pulse voltage in the reverse direction may be 1 to 1 ms. According to an embodiment of the present invention, the pulse width of the pulse voltage in the reverse direction is set such that the emission area of the organic light emitting device is 100 mm x 100 mm and the thickness of the organic material layer is 500 nm, Can be adjusted accordingly. Further, when the light emitting area of the organic light emitting diode and the thickness of the organic layer are changed, the pulse width of the reverse pulse voltage can be appropriately adjusted within the above range.

According to an embodiment of the present invention, since the reverse pulse voltage may take time to reach the maximum voltage due to an RC delay, the time during which the maximum voltage is maintained is longer than the width of the applied pulse Can be small. The formation of the exposed portion can be controlled according to a time period in which the continuous maximum voltage in each unit of the reverse pulse voltage is applied and the most effective exposure portion can be formed within the range of the sustain time of the continuous maximum voltage have.

When the pulse width of the inverse voltage is within the above range, the upper electrode of the short-circuit defect region is minimized, and the light emitting area of the organic light emitting device can be maximized.

According to an embodiment of the present invention, the pulse frequency of the reverse pulse voltage may be 100 Hz or more and 100 MHz or less. According to one embodiment of the present invention, the pulse frequency of the pulse voltage in the reverse direction is set such that the emission area of the organic light emitting device is 100 mm x 100 mm and the thickness of the organic material layer is 500 nm, Can be adjusted accordingly. Further, when the light emitting area of the organic light emitting device and the thickness of the organic layer are changed, the pulse frequency of the reverse pulse voltage can be appropriately adjusted within the above range.

According to an embodiment of the present invention, the pulse voltage in the reverse direction can be repeatedly applied 100 times or more, or 1,000 times or more. According to an embodiment of the present invention, the reverse pulse voltage can be applied repeatedly 100,000 times or less.

According to an embodiment of the present invention, the reverse pulse voltage may be sequentially increased in maximum voltage.

Each time a reverse pulse voltage is applied, the exposed portion may be formed in one short-circuit defect region in the OLED. That is, when there are a plurality of short-circuit defect regions, the breakdown voltage of organic compound layers in each short-circuit defect region may be different, and thus the reverse voltage can be sequentially increased to form exposed portions in each short-circuit defect region.

The organic light emitting device according to one embodiment of the present invention may be one produced by the above manufacturing method.

One embodiment of the present invention includes a lower electrode, an upper electrode disposed opposite to the lower electrode, and at least one organic layer provided between the lower electrode and the upper electrode, wherein the upper electrode includes a metal electrode Preparing an organic light-emitting device comprising: Connecting an external power source to the OLED; And applying an inverse voltage to the organic light emitting device to form an exposed portion by removing at least one region of the upper electrode including the short circuit defect region.

In the repair method according to an embodiment of the present invention, the reverse voltage may be a voltage between an organic layer breakdown voltage of the short-circuit defect region and an organic layer breakdown voltage of the normal region. The breakdown voltage of the organic layer in the short-circuit defect region and the breakdown voltage of the organic layer in the normal region are as described above.

In the repair method according to an embodiment of the present invention, the reverse voltage may be 18 V or more. Specifically, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 20 V or more and 25 V or more.

Further, in the repair method according to the embodiment of the present invention, the reverse voltage may be 70 V or less, or 50 V or less. Specifically, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 40 V or less.

In the repair method according to an embodiment of the present invention, the reverse voltage may be 18 V or more and 70 V or less. Specifically, in the manufacturing method according to one embodiment of the present disclosure, the reverse voltage may be 20 V or more and 50 V or less.

In the repair method according to an embodiment of the present invention, the reverse voltage may be a reverse pulse voltage.

In the repairing method according to an embodiment of the present invention, the pulse width of the reverse pulse voltage may be 10 ns or more and 10 ms or less. Specifically, according to an embodiment of the present invention, the pulse width of the pulse voltage in the reverse direction may be 1 to 1 ms. According to an embodiment of the present invention, the pulse width of the pulse voltage in the reverse direction is set such that the emission area of the organic light emitting device is 100 mm x 100 mm and the thickness of the organic material layer is 500 nm, Can be adjusted accordingly. Further, when the light emitting area of the organic light emitting diode and the thickness of the organic layer are changed, the pulse width of the reverse pulse voltage can be appropriately adjusted within the above range.

In the repair method according to one embodiment of the present invention, since the reverse pulse voltage may take time to reach the maximum voltage due to the RC delay, May be less than the width of the pulse. The formation of the exposed portion can be controlled according to a time period in which the continuous maximum voltage in each unit of the reverse pulse voltage is applied and the most effective exposure portion can be formed within the range of the sustain time of the continuous maximum voltage have.

When the pulse width of the inverse voltage is within the above range, the upper electrode of the short-circuit defect region is minimized, and the light emitting area of the organic light emitting device can be maximized.

In the repairing method according to an embodiment of the present invention, the pulse frequency of the reverse pulse voltage may be 100 Hz or more and 100 MHz or less. According to one embodiment of the present invention, the pulse frequency of the pulse voltage in the reverse direction is set such that the emission area of the organic light emitting device is 100 mm x 100 mm and the thickness of the organic material layer is 500 nm, Can be adjusted accordingly. Further, when the light emitting area of the organic light emitting device and the thickness of the organic layer are changed, the pulse frequency of the reverse pulse voltage can be appropriately adjusted within the above range.

In the repairing method according to an embodiment of the present invention, the reverse pulse voltage may be repeatedly applied 100 times or more, or 1,000 times or more. According to an embodiment of the present invention, the reverse pulse voltage can be applied repeatedly 100,000 times or less.

In the repairing method according to an embodiment of the present invention, the reverse pulse voltage may be sequentially increased in maximum voltage.

Each time a reverse pulse voltage is applied, the exposed portion may be formed in one short-circuit defect region in the OLED. That is, when there are a plurality of short-circuit defect regions, the breakdown voltage of organic compound layers in each short-circuit defect region may be different, and thus the reverse voltage can be sequentially increased to form exposed portions in each short-circuit defect region.

In the repair method, the matters related to the reverse voltage, the exposed portion, the pulse voltage in the reverse direction, the pulse width, and the like are the same as described above in the manufacturing method.

The organic light emitting device according to one embodiment of the present invention may be an organic light emitting device repaired by the repair method.

According to one embodiment of the present invention, the substrate can use a substrate having excellent transparency, surface smoothness, ease of handling, and waterproofness. Specifically, a glass substrate, a thin film glass substrate, or a transparent plastic substrate can be used. The plastic substrate may include films such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PEEK (polyether ether ketone) and PI (polyimide) in a single layer or a multilayer. In addition, the substrate may have a light scattering function in the substrate itself. However, the substrate is not limited thereto, and a substrate commonly used in an organic light emitting device can be used.

According to an embodiment of the present invention, the lower electrode may be a transparent electrode. When the lower electrode is a transparent electrode, the lower electrode may be a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like. Furthermore, the lower electrode may be a translucent electrode. When the lower electrode is a semi-transparent electrode, it may be made of a semi-transparent metal such as Ag, Au, Mg, Ca, or an alloy thereof. When the semitransparent metal is used as the lower electrode, the organic light emitting device may have a microcavity structure.

According to one embodiment of the present disclosure, the lower electrode may be an anode, and the upper electrode may be a cathode.

According to one embodiment of the present disclosure, the lower electrode may be a cathode, and the upper electrode may be an anode.

According to an embodiment of the present invention, the organic material layer includes at least one light emitting layer, and the hole injection layer; A hole transport layer; A hole blocking layer; A charge generation layer; An electron blocking layer; An electron transport layer; And an electron injection layer may be further included.

The charge generating layer refers to a layer in which holes and electrons are generated when a voltage is applied.

According to one embodiment of the present invention, the hole transport layer material is a material capable of transporting holes from the anode or the hole injection layer to the light emitting layer. Specific examples include arylamine-based organic materials, conductive polymers, and block copolymers having a conjugated portion and a non-conjugated portion together, but the present invention is not limited thereto.

According to one embodiment of the present invention, the light emitting layer material is a material capable of emitting light in a visible light region by transporting and combining holes and electrons from the hole transporting layer and the electron transporting layer, respectively, and has a high quantum efficiency for fluorescence or phosphorescence Materials are preferred. Specific examples include 8-hydroxy-quinoline aluminum complex (Alq ₃ ); Carbazole-based compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzoquinoline-metal compounds; Compounds of the benzoxazole, benzothiazole and benzimidazole series; Polymers of poly (p-phenylenevinylene) (PPV) series; Spiro compounds; Polyfluorene; Rubrene, and the like, but are not limited thereto.

According to one embodiment of the present invention, the electron transport layer material is a material capable of transferring electrons from the cathode well into the light emitting layer, and is preferably a material having high mobility to electrons. Specific examples include an Al complex of 8-hydroxyquinoline; Complexes containing Alq ₃ ; Organic radical compounds; Hydroxyflavone-metal complexes, and the like, but are not limited thereto.

The present invention provides a display device including the organic light emitting device. In the display device, the organic light emitting diode may serve as a pixel or a backlight. Besides, the configuration of the display device may be applied to those known in the art.

The present specification provides a lighting apparatus including the organic light emitting element. In the illumination device, the organic light emitting element plays a role of a light emitting portion. In addition, configurations necessary for the illumination device can be applied to those known in the art.

Hereinafter, the present invention will be described in detail by way of examples with reference to the drawings. However, the embodiments according to the present disclosure can be modified in various other forms, and the scope of the present specification is not construed as being limited to the embodiments described below. Embodiments of the present disclosure are provided to more fully describe the present disclosure to those of ordinary skill in the art.

[Example]

An auxiliary electrode using Al, a lower anode using indium tin oxide (ITO), and an insulating layer using polyimide were sequentially formed on the glass substrate, and a pattern was formed on the portion requiring light emission by using a photolithography process. The emission area at this time was 90 mm x 90 mm. A hole injection layer, a hole transporting layer, a light emitting layer, an electron transporting layer and an electron injecting layer were sequentially formed thereon by a vacuum thermal deposition method. The total thickness of the organic layer formed was about 500 nm. Silver (Ag) was formed to a thickness of 150 nm as an upper cathode to prepare an organic light emitting device.

The completed organic light emitting diode was connected to the external power source, the anode was connected to the negative electrode, and the cathode was connected to the positive electrode, and reverse voltage was applied to remove the short circuit defect region. At this time, the reverse voltage having a pulse width of 30 μs was repeatedly applied 20 times at intervals of 100 μs, increasing the maximum voltage sequentially from 0.5 V to 20 V at intervals of 0.5 V, . The cycle was repeated 20 times to completely remove the short-circuit defect region.

As a result, a defect removing region having an Ag cathode exposed portion having a diameter of 50 mu m to 200 mu m was formed and confirmed by an optical microscope or a scanning electron microscope.

FIG. 3 shows an exposed region of an organic light emitting diode according to an embodiment of the present invention, and is an image of a microscope observed at an upper electrode side of the organic light emitting device.

FIG. 4 illustrates an exposed region and a light emitting state of the organic light emitting diode according to an embodiment of the present invention, and is an image of a microscope observed at the lower electrode side of the organic light emitting diode.

FIG. 5 illustrates an exposed region of the organic light emitting diode according to the embodiment, which is an electron microscope image observed at the upper electrode side.

6 is an electron microscope image of a section of the exposed region of the organic light emitting device according to the embodiment.

[Comparative Example]

An organic light emitting device was fabricated by the same process as in Example except for the step of applying a reverse voltage.

FIG. 7 is a graph illustrating voltage-current density characteristics of organic light emitting devices according to Comparative Examples and Examples. Specifically, FIG. 7 is a graph showing the current density when a voltage is applied to the organic light emitting device according to the embodiments and the comparative example. When a reverse voltage or a forward voltage lower than the threshold voltage is applied, the current flowing in the organic light emitting element can be regarded as a leakage current flowing through the defective portion of the element. It can be seen that the leakage current value is as low as 1/100 or less in the embodiment having the open portion because the defective portion is removed as compared with the comparative example in which the defective portion is not removed.

100: substrate
200: lower electrode
300: organic layer
400: upper electrode
500: exposed portion

Claims (28)

A lower electrode; An upper electrode facing the lower electrode; And at least one organic material layer provided between the lower electrode and the upper electrode,
Wherein the upper electrode includes at least one or more exposed portions through which the organic material layer or the lower electrode is exposed,
The region corresponding to the exposed portion is electrically disconnected,
Wherein the lower electrode and the upper electrode are insulated from each other. The method according to claim 1,
Wherein at least one region of the organic material layer in the exposed portion is removed. The method of claim 2,
Wherein a region corresponding to an area smaller than an exposed area of the organic layer in the exposed portion is removed. The method according to claim 1,
Wherein the exposed portion is formed by removing one region of the upper electrode. The method according to claim 1,
Wherein the thickness of the upper electrode in at least one region of the edge of the exposed portion is 110% or more of the thickness of the upper electrode of the unexposed portion. The method of claim 2,
Wherein the thickness of the organic material layer in the exposed portion outside the removed region is 110% or more of the thickness of the organic material layer in the region other than the exposed portion. The method according to claim 1,
Wherein the content of Ag in the upper electrode is 90 wt% or more based on the total weight of the upper electrode. delete The method according to claim 1,
Wherein the maximum diameter of the exposed portion is 500 nm or more and 1 mm or less. The method according to claim 1,
Wherein a maximum diameter of the lower electrode exposed by the exposed portion is 200 nm or more and 200 占 퐉 or less. Preparing a lower electrode;
Forming at least one organic material layer on the lower electrode;
Forming an upper electrode on the organic material layer; And
Connecting the lower electrode and the upper electrode to an external power source and applying a reverse voltage to remove at least one region of the upper electrode including the shorting defect region to form an exposed portion,
The region corresponding to the exposed portion is electrically disconnected,
Wherein the lower electrode and the upper electrode are insulated from each other. The method of claim 11,
Wherein the reverse voltage is a voltage between an organic layer breakdown voltage of the short-circuit defect region and an organic layer breakdown voltage of the normal region. The method of claim 11,
Wherein the reverse voltage is 18 V or more. The method of claim 11,
Wherein the reverse voltage is a reverse pulse voltage. [Claim 15 is abandoned upon payment of registration fee] 15. The method of claim 14,
Wherein the pulse width of the reverse pulse voltage is 10 ns or more and 10 ms or less. [Claim 16 is abandoned upon payment of registration fee.] 15. The method of claim 14,
Wherein the pulse frequency of the reverse pulse voltage is 100 Hz or more and 100 MHz or less. [Claim 17 is abandoned upon payment of registration fee.] 15. The method of claim 14,
Wherein the reverse pulse voltage is repeatedly applied 100 times or more. [Claim 18 is abandoned upon payment of registration fee.] 15. The method of claim 14,
Wherein the reverse pulse voltage gradually increases in maximum voltage. Preparing an organic light emitting device including a lower electrode, an upper electrode opposing the lower electrode, and at least one organic layer disposed between the lower electrode and the upper electrode;
Connecting an external power source to the OLED; And
Forming an exposed portion by removing at least one region of the upper electrode including a short-circuit defect region by applying a reverse voltage to the organic light emitting device,
The region corresponding to the exposed portion is electrically disconnected,
Wherein the lower electrode and the upper electrode are insulated from each other. The method of claim 19,
Wherein the reverse voltage is a voltage between an organic layer breakdown voltage of the short-circuit defect region and an organic layer breakdown voltage of the normal region. The method of claim 19,
Wherein the reverse voltage is 18 V or more. The method of claim 19,
Wherein the reverse voltage is a reverse pulse voltage. [Claim 23 is abandoned due to the registration fee.] 23. The method of claim 22,
Wherein the pulse width of the reverse pulse voltage is 10 ns or more and 10 ms or less. [Claim 24 is abandoned upon payment of the registration fee.] 23. The method of claim 22,
Wherein the pulse frequency of the reverse pulse voltage is 100 Hz or more and 100 MHz or less. [Claim 25 is abandoned upon payment of registration fee] 23. The method of claim 22,
Wherein the reverse pulse voltage is repeatedly applied 100 times or more. [Claim 26 is abandoned upon payment of registration fee.] 23. The method of claim 22,
Wherein the reverse pulse voltage sequentially increases in maximum voltage. A display device comprising the organic light emitting element according to any one of claims 1 to 7, 9, An illumination device comprising an organic light-emitting device according to any one of claims 1 to 7, 9 and 10.

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