JP2009123355A - Method of manufacturing light-emitting device - Google Patents

Method of manufacturing light-emitting device Download PDF

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Publication number
JP2009123355A
JP2009123355A JP2007292876A JP2007292876A JP2009123355A JP 2009123355 A JP2009123355 A JP 2009123355A JP 2007292876 A JP2007292876 A JP 2007292876A JP 2007292876 A JP2007292876 A JP 2007292876A JP 2009123355 A JP2009123355 A JP 2009123355A
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Prior art keywords
resist film
step
pixel electrode
organic el
formed
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JP2007292876A
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Japanese (ja)
Inventor
Akira Gonda
Takashi Miyata
Hiroshi Sera
博 世良
崇 宮田
朗 権田
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Seiko Epson Corp
セイコーエプソン株式会社
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Abstract

For example, a short circuit failure occurring between an anode and a cathode in an organic EL device is reduced.
A part of an anode (9a) formed in each of a plurality of pixel regions (70g) constituting an image display region (110) on a substrate (10) protrudes toward the anode (9a). A resist film (210) is formed on the anode (9a) so that the convex part (201) which is a part is exposed. In particular, by making the film thickness of the resist film (210) smaller than the height of the convex portion (201), the convex portion (201) is exposed from the resist film (210) only by forming the resist film (210). By performing an etching process on the resist film (210), the protrusion (201) exposed from the resist film (210) is etched, and the protrusion (201) can be easily removed.
[Selection] Figure 4

Description

  The present invention relates to a technical field of a method for manufacturing a light emitting device for manufacturing a light emitting device having a light emitting element such as an organic EL element as a light source.

  In an organic EL device which is an example of this type of light emitting device, a laminated structure including a power supply wiring and a pixel electrode is formed on a substrate, and an organic EL layer as a light emitting layer is formed on each pixel region. The The plurality of pixel regions constituting the display region on the substrate are separated from each other by partition walls having insulating properties. For example, an organic EL material is placed on a portion of the pixel electrode exposed in the region partitioned by the partition walls. By applying, a light emitting layer is formed for each pixel. Thereafter, a common electrode, which is the other electrode, is formed in common over a plurality of pixel regions on the light emitting layer so as to form a pair with a pixel electrode, which is one electrode that supplies current to the light emitting layer.

  Here, when the surface of the pixel electrode is not flat, that is, when a convex portion protruding toward the pixel electrode exists on the surface of the pixel electrode, the convex portion penetrates the organic EL layer formed on the pixel electrode. As a result, or due to electric field concentration, the pixel electrode and the common electrode are short-circuited, and a pixel portion that does not light up, that is, does not operate normally is formed.

  Such a convex portion is often a foreign matter adhering to the surface of the pixel electrode when, for example, a patterning step of patterning an insulating film when forming a partition wall or a resist film is peeled off. Patent Document 1 proposes an example of a technique for reducing the lighting failure of the pixel portion caused by such foreign matter.

JP 2004-362912 A

  However, the convex portion generated on the surface of the pixel electrode is not only due to the foreign matter adhering to the surface of the pixel electrode, but the pixel electrode is formed by forming the pixel electrode while the foreign matter is attached to the base portion of the pixel electrode. The portion is also formed by protruding toward the pixel electrode. Even if the cleaning process is performed using functional water such as ozone water in order to remove the foreign matter from the base portion of the pixel electrode, it is technically difficult to completely remove the foreign matter from the surface of the pixel electrode. In addition, as the thickness of the light-emitting layer such as the organic EL layer becomes thinner, the possibility that the pixel electrode and the common electrode are short-circuited through the convex portion caused by the foreign matter is increased, and the display performance of the light-emitting device is degraded. I will let you. More specifically, for example, when a 400 Å organic EL layer is formed on a pixel electrode having a thickness of 500 、, or when a minute foreign object having a size of 400 Å or more adheres to the underlying portion of the pixel electrode. In this case, a part of the pixel electrode protrudes on the pixel electrode by the size of the foreign substance, and the pixel electrode and the common electrode are short-circuited.

  Therefore, the present invention has been made in view of the above problems and the like, and provides a method for manufacturing a light emitting device capable of improving the display performance of a light emitting device including a light emitting layer such as an organic EL layer as a light source. This is the issue.

  In order to solve the above problems, a method for manufacturing a light emitting device according to a first aspect of the present invention is such that a part of pixel electrodes formed in each of a plurality of pixel regions constituting a display region on a substrate is the pixel electrode. A first step of forming a resist film on the pixel electrode so as to expose a convex portion protruding upward, and the convex portion is etched from above the resist film; A second step of selectively removing the resist film, a third step of removing the resist film, and a fourth step of forming a light emitting layer on the pixel electrode from which the convex portions have been removed after the third step. Prepare.

  According to the method for manufacturing a light emitting device according to the first aspect of the present invention, the pixel electrode is formed using a transparent conductive material such as ITO or IZO so as to be exposed to the pixel region defined by the partition. Yes. The convex portion is a portion formed by forming the pixel electrode while the foreign matter is attached to the base portion of the pixel electrode. In the first step, a resist film is formed on the pixel electrode so that the convex portion is exposed.

  In the second step, the protrusion is selectively removed by performing an etching process on the protrusion from the resist film. Here, “selectively” means removing only the convex portion of the pixel electrode, and means that the portion of the pixel electrode excluding the convex portion is protected by the resist film so as not to be etched. .

  In the third step, for example, the resist film is removed using a dedicated stripper that can remove only the resist film.

  In the fourth step, after the third step, the convex portion is removed and a light emitting layer is formed on the pixel electrode. Since the surface of the pixel electrode is flat after the third step, even if a light emitting layer is formed thereon, a part of the pixel electrode penetrates the light emitting layer and is not exposed on the light emitting layer. . Further, the electric field concentration does not occur due to the convex portion. Therefore, when the common electrode is formed on the light emitting layer, the pixel electrode and the common electrode are not short-circuited.

  Therefore, according to the method for manufacturing a light-emitting device according to the first aspect of the present invention, it is possible to reduce pixel portions that are not lit during operation of the light-emitting device, and it is possible to improve the display performance of the light-emitting device. is there.

  In order to solve the above problems, a method for manufacturing a light emitting device according to a second aspect of the present invention overlaps the pixel region among conductive films formed over a plurality of pixel regions constituting a display region on a substrate. A resist film is formed on the conductive film so that a convex part, which is a part of the part protruding toward the conductive film, is exposed, and a resist corresponding to the pixel electrode pattern of the pixel electrode to be formed A first step of patterning the resist film in a pattern; a second step of selectively removing the projections and patterning the conductive film into the pixel electrode pattern by performing an etching process on the resist film; And a third step of removing the resist film, and a fourth step of forming a light emitting layer on the pixel electrode formed in the second step after the third step.

  According to the method for manufacturing a light emitting device of the second aspect of the present invention, in the first step, the conductive film is made of a transparent conductive material such as ITO or IZO, and extends over a plurality of pixel regions. It is formed by depositing a transparent conductive material. The convex portion, which is a portion of a portion of the conductive film that overlaps the pixel region, protrudes toward the conductive film, for example, among the pixel electrodes generated due to the foreign matter attached to the base portion of the conductive film. A part of the portion overlapping the pixel region is formed. The resist film is formed so that the convex portion is exposed from the resist film formed on the conductive film. In parallel with this, the resist film is patterned into a resist pattern corresponding to the pixel electrode pattern of the pixel electrode to be formed.

  In the second step, the protrusion is selectively removed by performing an etching process on the resist film. Here, “selectively” means that only the convex portions of the conductive film are removed by etching, as in the method of manufacturing the light emitting device according to the first aspect described above. In the second step, the conductive film is patterned into the pixel electrode pattern along with the removal of the protrusions. That is, in the second step, the removal of the convex portion and the patterning of the conductive film are performed by a common etching process. Accordingly, since the surface of the conductive film can be flattened simultaneously with the step of forming the pixel electrode without newly adding an etching step for removing the convex portion, the manufacturing method of the light emitting device is complicated. It will not be made.

  In the third step, for example, after removing the resist film by using the resist film peeling method similar to the method for manufacturing the light emitting device according to the first invention described above, the fourth step is performed.

  In the fourth step, a light emitting layer is formed on the pixel electrode formed in the second step. Since the convex portions present on the surface of the pixel electrode are removed in the second step, it is possible to reduce a short circuit between the common electrode and the pixel electrode formed on the light emitting layer.

  Therefore, according to the method for manufacturing a light emitting device according to the second aspect of the present invention, the pixel portions that do not light up during operation of the light emitting device are reduced as in the method for manufacturing the light emitting device according to the first aspect of the present invention. The display performance of the light-emitting device can be improved. In addition, since the process for removing the convex part is the same process as the process for patterning the conductive film, it is not necessary to add another process for removing the convex part, and the manufacturing process can be prevented from becoming complicated. .

  In one aspect of the first and second inventions of the present invention, the film thickness of the resist film may be smaller than the height of the convex portion.

  According to this aspect, the “height of the convex portion” refers to the size from the surface of the pixel electrode or the conductive film to the top of the convex portion. By forming the resist film so that the film thickness is smaller than this height, the convex portion is exposed from the resist film just by forming the resist film, and the resist film is etched by performing the etching process on the resist film. The protrusions exposed from are etched and can be easily removed.

  In another aspect of the first and second inventions of the present invention, the light emitting layer may be an organic EL layer.

  According to this aspect, even when the organic EL layer formed on the pixel electrode is thinned using a coating method, the short circuit between the pixel electrode and the common electrode can be reliably reduced. Along with the demand for thinning the organic EL layer, the size of the foreign matter that affects the short-circuit failure among the fine foreign matters attached to the underlying portion of the pixel electrode is reduced, so it is difficult to completely remove the foreign matter. In this case, the method for manufacturing the light emitting device according to this aspect is particularly effective.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

  Embodiments of a method for manufacturing a light emitting device according to each of the first and second inventions of the present invention will be described below with reference to the drawings. In this embodiment, an organic EL device is taken as an example of the light emitting device according to each of the first and second inventions of the present invention.

(First embodiment)
First, an embodiment of a method for manufacturing a light emitting device according to the first aspect of the present invention will be described with reference to FIGS. FIG. 1 is a block diagram showing the overall configuration of an organic EL device 1 according to this embodiment.

  The organic EL device 1 is a display device that is driven by an active matrix driving method with a built-in driving circuit, and each pixel unit 70 included in the organic EL device 1 includes an organic EL element 72.

  The image display area 110 of the organic EL device 1 is a typical example of the “display area” of the present invention, and is provided with data lines 114 and scanning lines 112 that intersect each other vertically and horizontally. A plurality of pixel portions 70 provided corresponding to the intersections of the data lines 114 and the scanning lines 112 are arranged in a matrix. Further, the image display area 110 is provided with power supply lines 117 corresponding to the pixel portions 70 arranged for the respective data lines 114.

  A scanning line driving circuit 130 and a data line driving circuit 150 are provided in the peripheral area located around the image display area 110. The scanning line driving circuit 130 sequentially supplies scanning signals to the plurality of scanning lines 112. The data line driving circuit 150 supplies an image signal to the data line 114 wired in the image display area 110. Note that the operation of the scanning line driving circuit 130 and the operation of the data line driving circuit 150 are synchronized with each other via the synchronization signal line 160. The power supply line 117 is supplied with pixel driving power from an external circuit. Focusing on one pixel portion 70 in FIG. 1, the pixel portion 70 is provided with an organic EL element 72 and, for example, a switching transistor 76 and a driving transistor 74 configured using TFTs, and a storage capacitor. 78 is provided.

  The scanning line 112 is electrically connected to the gate electrode of the switching transistor 76, the data line 114 is electrically connected to the source electrode of the switching transistor 76, and the drive is connected to the drain electrode of the switching transistor 76. The gate electrode of the transistor 74 is electrically connected. The power supply line 117 is electrically connected to the drain electrode of the driving transistor 74, and the anode of the organic EL element 72 is electrically connected to the source electrode of the driving transistor 74. In addition to the configuration of the pixel circuit illustrated in FIG. 1, various types of pixel circuits such as a current programming type pixel circuit, a voltage programming type pixel circuit, a voltage comparison type pixel circuit, a subframe type pixel circuit, and the like. Can be adopted.

  Next, a specific configuration of the organic EL device 1 will be described with reference to FIGS. 2 and 3. 2 is a plan view schematically showing a part of the image display region 110 of the organic EL device 1, and FIG. 3 is a cross-sectional view taken along the line III-III ′ of FIG.

  In FIG. 2, the organic EL device 1 includes an organic EL layer 50 that faces a plurality of pixel regions 70 g arranged along the X direction and the Y direction in the drawing so as to constitute an image display region 110. The plurality of pixel regions 70 g are separated from each other by an insulating partition wall 47.

  In FIG. 3, the organic EL device 1 includes a substrate 10, an organic EL element 72 formed on the substrate 10, a driving transistor 74, and a partition wall 47. The organic EL element 72 is a bottom emission type organic EL element that emits light downward in the figure, but the light emitting device of the present invention can also be applied to an organic EL device having a top emission type organic EL element. Needless to say.

  The substrate 10 is made of, for example, a glass substrate. Since the organic EL element 72 is a bottom emission type light emitting element, the driving transistor 74 and the switching transistor 76 shown in FIG. 1 are provided in a region of the substrate 10 that does not overlap with the organic EL element 72. The substrate 10 includes not only the organic EL element 72 formed on the substrate 1 but also various circuits such as the scanning line driving circuit 130 and the data line driving circuit 150 shown in FIG.

  The organic EL element 72 includes an organic EL layer 50 that is an example of the “light emitting layer” of the present invention, an anode 9 a that is an example of the “pixel electrode” of the present invention, and a cathode 49.

  The organic EL layer 50 is formed by applying an organic EL material to a recess surrounded by a partition wall 47 that separates the plurality of organic EL layers 50 from each other. More specifically, the organic EL layer 50 is formed by applying an ink containing each organic EL material to a recess surrounded by the partition wall 47 using an ink jet method which is an example of a coating method.

The partition wall 47 is a base film formed on the protective layer overlapping the end of the pixel electrode 9a by using a film forming method such as a CVD (Chemical Vapor Deposition) method, a coating method, or a sputtering method, for example. An inorganic material layer composed of an inorganic material such as SiO, SiO 2 or TiO 2, and an organic material layer composed of an organic material such as an acrylic resin or a polyimide resin, and tapered toward the upper side in the figure. And a tapered portion having a tapered shape.

  The anode 9 a is formed on an insulating film 42 formed on the gate insulating film 41 on the substrate 10. The anode 9a is configured using, for example, a transparent conductive material such as ITO or IZO.

  The cathode 49 is formed over the plurality of pixel regions 70 g on the substrate 10 and is a common electrode shared by the plurality of organic EL elements 72. More specifically, the cathode 49 extends, for example, as an electrode physically connected between the plurality of organic EL elements 72 as viewed in plan on the substrate 10 or as one continuous electrode. . The cathode 49 is an electrode made of a reflective material such as Ag, and reflects the light emitted from the organic EL layer 50 and projects it downward in the figure.

  The driving transistor 74 includes a semiconductor layer 1a and a gate electrode 3a1. The semiconductor layer 1a is a polycrystalline silicon layer or an amorphous silicon layer formed by using, for example, a low-temperature polysilicon technique. The source region 1 s constituting a part of the semiconductor layer 1 a is electrically connected to the power supply line 117 shown in FIG. 1 through the contact hole 81. The drain region 1d constituting a part of the semiconductor layer 1a is electrically connected to the anode 9a through the contact hole 82. The gate electrode 3a1 overlaps the channel end 1a 'of the semiconductor layer 1a. The driving transistor 74 is turned on / off according to a data signal supplied to the gate electrode 3a1 via the data line 114 shown in FIG. 1, and supplies a driving current to the organic EL element 72.

  In the organic EL device 1, the organic EL element 72 is sealed by a sealing portion (not shown) disposed on the cathode 49 so that the outside air does not touch the organic EL element 72 from the outside air. It is shut off.

  Next, a manufacturing method for manufacturing the above-described organic EL device 1 will be described with reference to FIGS. 4 to 6. 4 and 5 are process cross-sectional views sequentially showing main processes of the method for manufacturing the organic EL device 1. FIG. 6 is an enlarged cross-sectional view showing an enlarged peripheral portion of the anode.

  As shown in FIG. 4A, in the resist film forming step which is an example of the “first step” in the first invention of the present invention, a plurality of pixel regions 70g constituting the image display region 110 on the substrate 10 are formed. A resist film 210 is formed on the anode 9a so that the convex portions 201, which are portions of the anode 9a formed respectively, projecting toward the anode 9a are exposed.

  As shown in FIG. 6, in the present embodiment, the film thickness T <b> 2 of the resist film 210 is smaller than the height T <b> 1 of the convex portion 201. Therefore, the convex portion 201 is exposed from the resist film 210 only by forming the resist film 210, and the convex portion 201 exposed from the resist film 210 is formed by performing an etching process on the resist film 210 as described later. The protrusion 201 can be easily removed by etching. The convex portion 201 is a portion formed by forming the anode 9 a on the insulating film 42 with the foreign matter 200 attached to the surface of the insulating film 42 constituting the base portion of the anode 9 a.

  Next, as shown in FIG. 4B, in the etching process which is an example of the “second process” in the first invention of the present invention, by performing an etching process on the convex portion 201 from the resist film 210, The convex portion 201 is selectively removed. Here, since the portion excluding the convex portion 201 in the anode 9a is protected by the resist film 210, only the convex portion 201 is etched.

  Next, as shown in FIG. 5C, in a resist film peeling step which is an example of the “third step” in the first invention of the present invention, a dedicated stripping solution capable of stripping only the resist film 210 is removed. The resist film 210 is supplied from above the film 210, and the resist film 210 is peeled off. The foreign matter 200 that faces the opening formed by removing the convex portion 201 is not removed by the stripping solution, and the anode 9a is not etched from the opening.

  Next, as shown in FIG. 5D, after the partition wall portion 47 is formed, the convex portion 201 is removed in the organic EL layer forming step which is an example of the “fourth step” in the first invention of the present invention. An organic EL layer 50 is formed on the anode 9a. Since the surface of the pixel electrode 9a is flat after the resist film peeling step, even if the organic EL layer 50 is formed thereon, a part of the pixel electrode 9a penetrates the organic EL layer 50, and the organic It is not exposed on the EL layer 50. In addition, electric field concentration does not occur due to the convex portion 201 during the operation of the organic EL device 1. Therefore, when the cathode 49 is formed on the organic EL layer 50, the anode 9a and the cathode 49 are not short-circuited. In addition, electric field concentration caused by the convex portion 201 during the operation of the organic EL device 1 can be reduced.

  In particular, according to the manufacturing method of the organic EL device according to the present embodiment, even when the organic EL layer 50 is formed on the anode 9a using a coating method and the organic EL layer 50 is thinned, the anode 9a is surely formed. And the short circuit of the cathode 49 can be reduced. Along with the demand for thinning the organic EL layer 50, the size of the foreign matter that can affect the short-circuit failure is reduced among the minute foreign matter 200 adhering to the base portion of the anode 9a, so that the foreign matter is completely removed. When this is difficult, the method for manufacturing the organic EL device according to the present embodiment is effective.

  As described above, according to the manufacturing method of the organic EL device according to the present embodiment, it is possible to reduce the pixel portions 70 that are not lit during the operation of the organic EL device 1, and the display performance of the organic EL device 1 can be reduced. It is possible to increase.

(Second Embodiment)
Next, an embodiment of a method for manufacturing a light emitting device according to the second invention of the present invention will be described with reference to FIGS. 7 and 8 are process cross-sectional views sequentially showing main processes in the method for manufacturing the organic EL device according to the present embodiment. In the following, portions common to those in the method for manufacturing the organic EL device according to the first embodiment described above are denoted by common reference numerals, and detailed description thereof is omitted.

  As shown in FIG. 7A, in the resist film forming process which is an example of the “first process” in the second invention of the present invention, a plurality of images constituting the image display area 110 (see FIG. 1) on the substrate 10 are formed. The conductive film 9a1 formed over the pixel region 70g of the conductive film 9a1 is exposed on the conductive film 9a1 so that the protruding portion 201, which is a part of the conductive film 9a1 that overlaps the pixel region 70g, protrudes toward the conductive film 9a1. A resist film 210a is formed, and the resist film 210a is patterned into a resist pattern corresponding to the electrode pattern of the anode 9a to be formed.

  Next, as shown in FIG. 7B, in the etching process which is an example of the “second process” in the second invention of the present invention, the protrusion 201 is formed by performing an etching process on the resist film 210a. The conductive film 9a1 is selectively removed and patterned into an electrode pattern of the anode 9a. Here, “selectively” means that only the convex portion 201 of the conductive film 9a1 is removed by etching. In the etching step, the conductive film 9a1 is patterned into the electrode pattern of the anode 9a along with the removal of the convex portion 201. That is, in the etching process, the removal of the convex portion 201 and the patterning of the conductive film 9a1 are performed by a common etching process. Therefore, the surface of the conductive film 9a1 can be flattened simultaneously with the step of forming the anode 9a without newly adding an etching step for removing the convex portion 201. The manufacturing method is not complicated.

  Next, as shown in FIG. 8C, in the resist film peeling step which is an example of the “third step” in the second invention of the present invention, the stripping solution is used in the same manner as in the first embodiment. The resist film 210a is removed.

  Next, as shown in FIG. 8D, in the organic EL layer forming process which is an example of the “fourth process” in the second invention of the present invention, a coating method or the like is applied on the anode 9a formed by the etching process. The organic EL layer 50 is formed using the film forming method. In the organic EL layer forming step, since the convex portion 201 does not exist on the surface of the anode 9a, it is possible to reduce a short circuit between the cathode 49 formed on the organic EL layer 50 and the anode 9a in the subsequent step. In addition, similarly to the first embodiment, the electric field concentration generated between the anode 9a and the cathode 49 during the operation of the organic EL device 1 can be reduced.

  Therefore, according to the manufacturing method of the organic device according to the present embodiment, it is possible to reduce the pixel portions 70 that are not lit during the operation of the organic EL device 1, as in the manufacturing method of the organic EL device according to the first embodiment. Therefore, the display performance of the organic EL device 1 can be improved. In addition, since the process for removing the convex part 201 is a process for forming the anode 9a, more specifically, a patterning process for the anode 9a, a process for removing the convex part 201 is added. Therefore, the manufacturing process can be prevented from becoming complicated.

It is a block diagram which shows the whole structure of the organic EL apparatus which can be manufactured with the manufacturing method of the organic EL apparatus which concerns on 1st Embodiment. It is the top view which showed typically a part of image display area of the organic EL device which can be manufactured with the manufacturing method of the organic EL device concerning a 1st embodiment. It is the III-III 'sectional view taken on the line of FIG. It is process sectional drawing (the 1) which showed the main process of the manufacturing method of the organic electroluminescent apparatus which concerns on 1st Embodiment in order. It is process sectional drawing (the 2) which showed the main process of the manufacturing method of the organic electroluminescent apparatus which concerns on 1st Embodiment in order. It is the expanded sectional view which expanded and showed the peripheral part of the anode with which the organic EL device which can be manufactured with the manufacturing method of the organic EL device concerning a 1st embodiment is provided. It is process sectional drawing (the 1) which showed the main process of the manufacturing method of the organic electroluminescent apparatus which concerns on 2nd Embodiment in order. It is process sectional drawing (the 2) which showed the main process of the manufacturing method of the organic electroluminescent apparatus which concerns on 2nd Embodiment in order.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Organic EL apparatus, 9a ... Anode, 9a1 ... Conductive film, 10 ... Substrate, 50 ... Organic EL layer, 201 ... Convex part, 200 ... Foreign material, 210, 210a ... Resist film

Claims (4)

  1. A resist film is formed on the pixel electrode such that a convex portion, which is a portion of the pixel electrode formed in each of the plurality of pixel regions constituting the display region on the substrate, protrudes toward the pixel electrode is exposed. Forming a first step;
    A second step of selectively removing the protrusions by etching the protrusions from above the resist film;
    A third step of removing the resist film;
    And a fourth step of forming a light emitting layer on the pixel electrode from which the convex portion has been removed after the third step.
  2. Of the conductive film formed over a plurality of pixel areas constituting the display area on the substrate, a part of a portion overlapping with the pixel area is exposed so as to expose a convex part. Forming a resist film on the conductive film and patterning the resist film in a resist pattern corresponding to the pixel electrode pattern of the pixel electrode to be formed;
    A second step of selectively removing the protrusions and patterning the conductive film into the pixel electrode pattern by performing an etching process on the resist film;
    A third step of removing the resist film;
    And a fourth step of forming a light emitting layer on the pixel electrode formed in the second step after the third step.
  3. The method for manufacturing a light-emitting device according to claim 1, wherein a thickness of the resist film is smaller than a height of the convex portion.
  4. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the light emitting layer is an organic EL layer.
JP2007292876A 2007-11-12 2007-11-12 Method of manufacturing light-emitting device Withdrawn JP2009123355A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101818907B1 (en) 2014-11-27 2018-01-16 엘지디스플레이 주식회사 Organic light emitting device, method for manufacturing organic light emitting device, and method for repairing of organic light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101818907B1 (en) 2014-11-27 2018-01-16 엘지디스플레이 주식회사 Organic light emitting device, method for manufacturing organic light emitting device, and method for repairing of organic light emitting device

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Effective date: 20110201