KR101816210B1 - Light emitting diode package and light emiitiing diode package module having the same - Google Patents

Light emitting diode package and light emiitiing diode package module having the same Download PDF

Info

Publication number
KR101816210B1
KR101816210B1 KR1020150185945A KR20150185945A KR101816210B1 KR 101816210 B1 KR101816210 B1 KR 101816210B1 KR 1020150185945 A KR1020150185945 A KR 1020150185945A KR 20150185945 A KR20150185945 A KR 20150185945A KR 101816210 B1 KR101816210 B1 KR 101816210B1
Authority
KR
South Korea
Prior art keywords
light emitting
emitting diode
light
cavity
circuit board
Prior art date
Application number
KR1020150185945A
Other languages
Korean (ko)
Other versions
KR20170076104A (en
Inventor
오승현
조윤건
김보균
한석민
한준혁
Original Assignee
주식회사 루멘스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 루멘스 filed Critical 주식회사 루멘스
Priority to KR1020150185945A priority Critical patent/KR101816210B1/en
Priority to US15/169,217 priority patent/US9853017B2/en
Publication of KR20170076104A publication Critical patent/KR20170076104A/en
Priority to US15/815,667 priority patent/US10163870B2/en
Application granted granted Critical
Publication of KR101816210B1 publication Critical patent/KR101816210B1/en
Priority to US16/197,024 priority patent/US20190206846A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

According to the present invention, there is provided a semiconductor device comprising: a base having a cavity provided with a reflective surface; A first light emitting diode, and a first fluorescent layer formed on an upper surface and a side surface of the first light emitting diode, the first light emitting diode having a first wavelength range, the first light emitting diode being installed in the cavity; And a second fluorescent layer formed on a top surface and a side surface of the second light emitting diode and the second light emitting diode to irradiate a second light having a second wavelength range, A second light emitting diode; And a molding member formed on the first light emitting diode and the second light emitting diode to fill the inside of the cavity and to separate the first light emitting diode and the second light emitting diode, A package, and a light emitting diode package module.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting diode (LED) package and a light emitting diode (LED)

The present invention relates to a light emitting diode package and a light emitting diode package module including the same.

BACKGROUND ART In recent years, light emitting devices have been used as white light sources used in backlight units (backlight units) used in displays such as notebook computers, monitors, mobile phones, TVs, and the like. Accordingly, various attempts have been made to obtain white light using a light emitting element. For example, a combination of a blue light emitting element and a yellow fluorescent layer or a combination of a blue light emitting element, a red fluorescent layer, and a green fluorescent layer has been utilized. However, in a commonly used white light emitting method, the amount of the fluorescent layer to be added is limited, so that the problem of increasing the power consumption due to the deterioration of the color reproducibility or the decrease of the light intensity is raised.

Accordingly, an OLED having excellent color reproducibility may be used. In this case, however, there is a problem of high cost. Accordingly, there has been a great demand in the art for an economical method that realizes high color reproducibility of white light.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode package having excellent color reproducibility and high economic efficiency and a light emitting diode package module including the same.

According to an aspect of the present invention, there is provided a light emitting diode package including: a base having a cavity having a reflection surface; A first light emitting diode, and a first fluorescent layer formed on an upper surface and a side surface of the first light emitting diode, the first light emitting diode having a first wavelength range, the first light emitting diode being installed in the cavity; And a second fluorescent layer formed on a top surface and a side surface of the second light emitting diode and the second light emitting diode to irradiate a second light having a second wavelength range, A second light emitting diode; And a molding member formed on the first light emitting diode and the second light emitting diode to fill the inside of the cavity and to separate the first light emitting diode and the second light emitting diode.

Here, the first light emitting diode has irradiation light of 380 to 450 nm, and the first wavelength region may have a peak wavelength of 510 to 550 nm.

Here, the second light emitting diode has irradiation light of 380 to 450 nm, and the second wavelength region may have a peak wavelength of 600 to 650 nm.

Here, the spacing molding part may be formed in direct contact with corresponding sides of the first fluorescent layer and the second fluorescent layer.

Here, the reflecting surface may include: a first reflecting surface formed on the first light emitting diode side and reflecting the first light; A second reflecting surface formed on the second light emitting diode side and reflecting the second light; And a third reflecting surface formed between the first light emitting diode and the second light emitting diode and reflecting the first light and the second light together.

The light emitting diode may further include a power supply terminal protruding from a side surface of the base and supplying power to the first light emitting diode and the second light emitting diode.

Here, the power supply terminal may be coupled to a printed circuit board on which a plurality of circuit units are mounted, such that when the LED package is perpendicular to the printed circuit board, the cavity may be level with the printed circuit board.

Here, the power supply terminal may include a positive electrode terminal portion and a negative electrode terminal portion formed in parallel on the same side of the base.

 A light emitting diode package module according to another embodiment of the present invention includes: a printed circuit board including a resistance element and a plurality of circuit parts; A light emitting diode package arranged parallel to the printed circuit board at predetermined intervals to emit the first light and the second light; And a light guide plate provided on the printed circuit board and adapted to irradiate the first light and the second light to the main surface side of the printed circuit board, wherein the light emitting diode package module comprises: a base having a cavity; A first light emitting diode, and a first fluorescent layer formed on an upper surface and a side surface of the first light emitting diode, the first light emitting diode having a first wavelength range, the first light emitting diode being installed in the cavity; And a second fluorescent layer formed on a top surface and a side surface of the second light emitting diode and the second light emitting diode to irradiate a second light having a second wavelength range, A second light emitting diode; And a molding member formed on the first light emitting diode and the second light emitting diode to fill the inside of the cavity and to separate the first light emitting diode and the second light emitting diode from each other, .

The cavity may be spaced apart from the upper surface and the lower surface of the light guide plate by a distance from the center of the side surface of the light guide plate.

Here, the first light emitting diode has irradiation light of 380 to 450 nm, and the first wavelength region may have a peak wavelength of 510 to 550 nm.

Here, the second light emitting diode device may emit light having a wavelength of 380 to 450 nm, and the second wavelength region may have a peak wavelength of 600 to 650 nm.

Here, the spacing molding part may be formed in direct contact with corresponding sides of the first fluorescent layer and the second fluorescent layer.

According to an embodiment of the present invention having the above-described structure, the twin type package module having no intermediate wall structure using the light emitting diode integrally formed with the fluorescent layer can prevent the color separation phenomenon.

According to an embodiment of the present invention, a light emitting diode package module that irradiates three primary colors through different types of light emitting diodes is provided, thereby achieving high color reproducibility at low cost.

1 is a perspective view of a light emitting diode package according to an embodiment of the present invention.
2 is a plan view of the light emitting diode package module shown in Fig.
3 is a cross-sectional view of the light emitting diode package module shown in Fig.
4 is a graph showing optical characteristics of a first light emitting diode among light emitting diode package modules according to an embodiment of the present invention.
5 is a graph showing optical characteristics of a second light emitting diode among light emitting diode package modules according to an embodiment of the present invention.
6 is a graph showing optical characteristics of a light emitting diode module according to an embodiment of the present invention.
7 is a view showing an example in which a light emitting diode package, which is an embodiment of the present invention, is used in a light emitting diode package module.
8 is a sectional view of a light emitting diode package module according to another embodiment of the present invention.
9 is a sectional view of a light emitting diode package according to another embodiment of the present invention.

Hereinafter, a light emitting diode package and a light emitting diode package module including the light emitting diode package according to preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification, different embodiments are given the same or similar reference numerals, and the description thereof is replaced with the first explanation.

FIG. 1 is a perspective view of a light emitting diode package 100 according to an embodiment of the present invention, FIG. 2 is a plan view of the light emitting diode package 100 shown in FIG. 1, and FIG. 3 is a cross- 100).

 1 to 3, a light emitting diode package 100 according to an embodiment of the present invention is a twin pakage structure and includes a base 10, a first light emitting diode 20, a second light emitting diode A power supply terminal 40 and a molding member 50 for protecting the first light emitting diode 20 and the second light emitting diode 30.

The base 10 has an overall shape of the light emitting diode package 100 and a cavity 11 for mounting the first light emitting diode 20 and the second light emitting diode 30 is formed on the main surface. The base 10 may be provided as a substrate, may be formed of a resin material having a high opacity or reflectivity, and may be provided using a polymer resin that is easy to perform an injection process. However, it is not limited to this, and it may be formed of various resin materials, and may be formed of a nonconductive material such as ceramics. A wiring pattern may be formed on the upper surface of the cap 11 of the base 10.

On the other hand, a cavity 11 is formed on the main surface of the base 10. A reflecting surface may be formed on the side surface of the cavity 11 so as to more efficiently irradiate light emitted from the light emitting diodes 20 and 30 mounted on the base 10. In other words, in the present invention, the base 10 is formed with a plurality of reflective surfaces 13, 14 and 15, and the first light and the second light, which are respectively irradiated by the first light emitting diode 20 and the second light emitting diode 30, Two lights can be reflected and irradiated to the center side of the cavity 11. [ The reflecting surface includes a first reflecting surface 12 formed on the first light emitting diode 20 side and reflecting the first light, a second reflecting surface 12 formed on the second light emitting diode 30 side, And a third reflecting surface 14 formed between the first light emitting diode 20 and the second light emitting diode 30 for reflecting the first light and the second light together ).

The first light emitting diode 20 and the second light emitting diode 30 mounted in the cavity 11 are spaced apart from each other by a molding spacing 52 at a predetermined interval. This is because the first light emitting diode 20 and the second light emitting diode 30 need not be coated with a fluorescent layer but are mounted with a fluorescent layer. That is, the first light emitting diode 20 and the second light emitting diode 30 are composed of the light emitting diode elements 21 and 31, respectively, and the fluorescent layers 23 and 33 covering the light emitting diode elements 21 and 31 . The light emitting diodes 20 and 30 may be a chip scale package (CSP) or a wafer level package (WLP).

The chip scale package forms a light emitting diode package on a chip-scale basis. A large amount of light emitting diode devices are mounted on a substrate strip, and the fluorescent layer is applied in a batch process, followed by a singulation process. Here, the size of the needle-scale package is approximately the same as that of the light-emitting diode element or slightly larger in the range of 20%. These packages do not require additional submounts or boards and can be connected directly to the board. In addition, its size is smaller than that of conventional light emitting diode packages, its manufacturing cost is low, its heat resistance ability and color uniformity are high.

The light emitting diode elements 21 and 31 may be semiconductor light emitting diode elements in which a semiconductor layer is epitaxially grown on a growth substrate as a photoelectric element that emits light when an electric signal is applied. Sapphire can be applied to the growth substrate, but the growth substrate is not limited thereto. For example, known growth substrates such as spinel, SiC, GaN, GaAs and the like can be used. Specifically, the light emitting diode device may include an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer disposed therebetween, and the semiconductor layer may include at least one of BN, SiC, ZnSe, GaN, InGaN, InAlGaN, AlGaN, BAIGaN, BInAlGaN And the like. The light emitting diode elements 21 and 31 may be blue light emitting elements in consideration of optical output, and the light emitting layers of the blue light emitting diode elements 21 and 31 may be InxAlyGa1-x-yN (0? X? 1, 1, x + y < 1), and may have a single or multiple quantum well structure, thereby improving light output.

The fluorescent layers 23 and 33 are made of a material selected from the group consisting of YAG (Yttrium Aluminum Garnet), TAG (Terbium Aluminum Garnet), LuAG (Lutetium aluminum garnet), silicate, nitride, oxynitride, sulfide), or a combination thereof.

 As described above, the chip scale package is a miniaturized light emitting diode device package having almost the same size as the chip, and the light emitting diode elements 21 and 31 and the fluorescent layers 23 and 33 surrounding the light emitting diode elements 21 and 31 are formed in a chip size. 3, the first light emitting diode 20 is formed on the upper surface and the side surfaces of the first light emitting diode device 21 and the first light emitting diode device 21, And a first fluorescent layer 23 for emitting a first light having a wavelength region and the second light emitting diode 30 is composed of the upper surface of the second light emitting diode element 31 and the upper surface of the second light emitting diode element 31, And a second fluorescent layer (33) formed on the side surface and adapted to emit a second light having a second wavelength range. At this time, the first fluorescent layer 23 and the second fluorescent layer 33 can emit green light or red light, respectively. The first light emitting diode 20 may be a green chip scale package and the second light emitting diode 30 may be a red chip scale package. The optical output characteristic according to such a configuration will be described in more detail in Fig.

As described above, in the case of using the chip scale package, there is no intermediate wall, which is a structure for separately applying the fluorescent layers 23 and 33. The molding spacing portion 52 allows the first light emitting diode 20, 2 light emitting diodes 30 are spaced apart from each other. In other words, the spacing molding portion 52 may be formed in direct contact with the corresponding side (opposing side) of the first fluorescent layer 23 and the second fluorescent layer 33. Thus, the distance between the two light emitting diodes can be minimized. Accordingly, it is possible to structurally prevent a color separation phenomenon that may occur due to a long distance between the diodes.

The power supply terminal 40 is a component for receiving power from the printed circuit board of the LED package module. The power supply terminal 40 is protruded from the side surface of the base 10 so that the light emitting diode package 100 is vertically erected when the light emitting diode package 100 is installed on the printed circuit board do. The configuration for this is described in FIGS. 7 and 8. FIG. The power supply terminal 40 may include a cathode terminal 41 and a cathode terminal 43 formed on the same side of the base.

Meanwhile, a molding member 50 for protecting the first light emitting diode 20 and the second light emitting diode 30 may be further formed. The molding member 50 is made of a transparent resin material and functions to protect the first light emitting diode 20 and the second light emitting diode 30. On the other hand, an extending portion 51 (see Fig. 9) is formed in the sealing portion of the molding member 50, so that the moisture infiltration path can be lengthened to prevent the molding member 50 from being peeled off by moisture. This will be described with reference to FIG.

Hereinafter, the optical characteristics of the light emitting diode package module 100 described in FIGS. 1 to 3 will be described with reference to FIGS. 4 to 6. FIG.

4 is a graph of optical characteristics of the first light emitting diode package 20 which is a green chip scale package. The first LED 21 is a blue LED having a peak wavelength of 380 to 450 nm (blue light region), and the fluorescent material of the first fluorescent layer 23 is a first light emitting diode And has a function of converting the peak wavelength band of the irradiation light from the diode element 21 into 510 to 550 nm (red light emitting region). Accordingly, the graph of the optical characteristic of the first light emitting diode 20 has two peak regions as shown in Fig. That is, a blue light region (light emission wavelength region 1-1) as a peak region of the first light emitting diode element 21 as a light emitting body and a green light region (light emission wavelength region) as a peak region of light converted by the fluorescent material of the first fluorescent layer 23 1-2: first wavelength region).

5 is a graph of optical characteristics of the second light emitting diode 30, which is a red chip scale package. The second light emitting diode 31 is a blue LED having a peak wavelength of 380 to 450 nm (blue light region), and the fluorescent material of the second fluorescent layer 33 is a second light emitting diode And has a function of converting the peak wavelength band of the irradiation light from the diode element 31 into 600 to 650 nm (red light region). Accordingly, the graph of the optical characteristic of the second light emitting diode 30 has two peak regions as shown in Fig. That is, the blue light region (2-1: emission wavelength region), which is the peak region of the first light emitting diode element 21 which is the light emitting body, and the red light region 2-2: the peak region of the light converted by the fluorescent material of the fluorescent layer 2 wavelength region).

6 is a graph of optical characteristics of the light emitting diode package 100 including the first light emitting diode 20 and the second light emitting diode 30. The optical characteristic of the light emitting diode package 100 becomes equal to the sum of the optical characteristics of the first light emitting diode 20 and the second light emitting diode 30. That is, the optical characteristic graph of the light emitting diode package 100 has three peak regions as shown in FIG. That is, the blue light region 3-1, which is the peak region of the blue LED that is the light emitting body of the first and second light emitting diodes 20 and 30, and the blue light region 3-1, which is the light emitting region of the first fluorescent layer 23 of the first light emitting diode 20, And the red light region 3 - 3 (the peak region of the light converted by the fluorescent material of the second fluorescent layer 33 of the second light emitting diode 30) The peak area appears. According to the light emitting diode package of the embodiment of the present invention which emits the irradiation light having all of the three primary color peak areas, the color reproducibility can be improved.

Hereinafter, a light emitting diode package module including the light emitting diode package described with reference to FIGS. 1 to 6 will be described. 7 is a view illustrating an example in which a light emitting diode package 100 according to an embodiment of the present invention is used in a light emitting diode package module 1000 in the form of a backlight assembly, Sectional view of the diode package module 1000.

7 and 8, the light emitting diode package module 1000 may include a light emitting diode package 100, a circuit board 200, a reflective sheet 300, and a light guide plate 400 have.

The printed circuit board 200 may be formed with a predetermined circuit wiring. That is, the printed circuit board 200 may include a plurality of resistive elements and a plurality of circuit portions. On the side of the printed circuit board 200, a plurality of power supply terminals 210 for supplying power to the LED package 100 are installed at predetermined intervals. The power supply terminal 40 of the light emitting diode package 100 is vertically coupled to the power supply terminal 210 formed on one side of the circuit board 200 so that a plurality of light emitting diode packages 100 are vertically installed at predetermined intervals. Accordingly, the irradiation light of the light emitting diode package 100 is irradiated in parallel with the printed circuit board 200.

The cavity 11 of the light emitting diode package 100 is located at the center of the side surface of the light guide plate 400 and is spaced apart from the upper surface A and the bottom surface B of the light guide plate 400. With this configuration, the light emitted from the cavity 11 of the LED package 100 is efficiently guided to the light guide plate 400.

The reflective sheet 300 reflects light from the light emitting diode package 100 and increases the amount of light to the light guide plate 400. A light guide plate 400 is provided on the reflective sheet 300 to transmit light generated from the LED package 100 to the display panel.

A liquid crystal panel may be disposed on the light emitting diode package module thus configured to form a display unit. The display unit including such a light emitting diode package module is excellent in color reproducibility and can be produced at a low cost.

Hereinafter, another embodiment of a light emitting diode package 100 according to an embodiment of the present invention will be described with reference to FIG.

9 is a cross-sectional view of another embodiment of a light emitting diode package 100 according to an embodiment of the present invention. In the example shown in FIG. 9, the same elements as those described above are omitted for simplicity. As shown in Fig. 9, the molding member 50 is formed so as to completely cover the cavity 11 in order to enhance the durability against moisture. By completely covering the cavity 11, the edge of the molding member 50 covers a part of the upper surface of the adapter 13 of the base 10. The edge of the molding member 50 is defined as a sealing portion 51. The sealing portion 51 is composed of a slope profile 51-1 and a flat profile 51-2 as shown in the figure. The slope profile 51-1 extends from the center of the molding member 50 and is a region having a predetermined inclination in the lateral direction and the flat profile 51-2 extends from the slope profile 51-1 So that the inclination is substantially 0.

As described above, by having the flat profile 51-2, it is possible to alleviate the peeling phenomenon that may occur in the upper portion of the dam 13 and the sealing portion 51. That is, the path through which the moisture penetrates between the sealing portion 51 and the dam 13 is long, so that even if the moisture penetrates between the dam 13 and the sealing portion 51, So that only the flat profile 51-2 is peeled off, and the slope profile 51-1 maintains normal adhesion. That is, since the slope profile 51-1 is formed to be relatively thick, the adhesion force due to gravity can be made larger than the peeling force, so that the additional peeling phenomenon can be prevented.

Further, the flat profile 51-2 is applied relatively thinly, and the inclination is substantially zero, so that the water condensed in the slope profile 51-1 naturally flows down to the outside of the dam 13. As a result, it is possible to prevent the condensation of moisture between the end of the flat profile 51-2 and the dam 13.

According to an embodiment of the present invention having the above-described structure, the twin type package module having no intermediate wall structure using the light emitting diode integrally formed with the fluorescent layer can prevent the color separation phenomenon.

According to an embodiment of the present invention, a light emitting diode package module that irradiates three primary colors through different types of light emitting diodes is provided, thereby achieving high color reproducibility at low cost.

As described above, the light emitting diode package and the light emitting diode package module including the light emitting diode package are not limited to the configuration and method of the embodiments described above, and all or some of the embodiments May be selectively combined.

10: Base
11: Cavity
13: Dam
20: First light emitting diode
30: second light emitting diode
40: Power supply terminal
50: Molding member
51: sealing part
51-1: slope profile
51-2: Flat profile
100: Light emitting diode package
200: circuit board
300: reflective sheet
400: light guide plate
1000: Light emitting diode package module

Claims (13)

A base having a cavity provided with a reflective surface;
A first light emitting diode, and a first fluorescent layer formed on an upper surface and a side surface of the first light emitting diode, the first light emitting diode having a first wavelength range, the first light emitting diode being installed in the cavity;
And a second fluorescent layer formed on an upper surface and a side surface of the second light emitting diode and the second light emitting diode to irradiate a second light having a second wavelength range, A second light emitting diode; And
A spacing molding part formed in the first light emitting diode and the second light emitting diode to fill the inside of the cavity and to separate the first light emitting diode and the second light emitting diode, and a sealing part covering a part of the upper surface of the dam And a molding member comprising a molding member,
Wherein the sealing portion includes a slope profile extending from a central portion of the molding member; And a flat profile extending from the slope profile.
The method according to claim 1,
Wherein the first light emitting diode element has an irradiation light of 380 to 450 nm and the first wavelength region has a peak wavelength of 510 to 550 nm.
The method according to claim 1,
Wherein the second light emitting diode device has irradiation light of 380 to 450 nm and the second wavelength region has a peak wavelength of 600 to 650 nm.
delete The method according to claim 1,
The reflective surface may be,
A first reflective surface formed on the first light emitting diode side and reflecting the first light;
A second reflecting surface formed on the second light emitting diode side and reflecting the second light; And
And a third reflective surface formed between the first light emitting diode and the second light emitting diode for reflecting the first light and the second light together.
The method according to claim 1,
And a power supply terminal protruding from a side surface of the base and supplying power to the first light emitting diode and the second light emitting diode.
The method according to claim 6,
Wherein the power supply terminal is fastened to a printed circuit board on which a plurality of circuit parts are mounted such that the cavity is level with the printed circuit board when the light emitting diode package is perpendicular to the printed circuit board.
The method according to claim 6,
Wherein the power supply terminal includes a cathode terminal portion and a cathode terminal portion formed in parallel on the same side of the base.
A printed circuit board including a resistance element and a plurality of circuit portions; A light emitting diode package arranged parallel to the printed circuit board at predetermined intervals to emit the first light and the second light; And a light guide plate provided on the printed circuit board for irradiating the first light and the second light to the main surface side of the printed circuit board,
The light emitting diode package module comprises: a base having a cavity;
A first light emitting diode, and a first fluorescent layer formed on an upper surface and a side surface of the first light emitting diode, the first light emitting diode having a first wavelength range, the first light emitting diode being installed in the cavity;
And a second fluorescent layer formed on an upper surface and a side surface of the second light emitting diode and the second light emitting diode to irradiate a second light having a second wavelength range, A second light emitting diode; And
A spacing molding part formed in the first light emitting diode and the second light emitting diode to fill the inside of the cavity and to separate the first light emitting diode and the second light emitting diode, and a sealing part covering a part of the upper surface of the dam And a molding member including the molding member,
Wherein the sealing portion includes a slope profile extending from a central portion of the molding member; And a flat profile extending from the slope profile.
10. The method of claim 9,
Wherein the cavity is located at a side central portion of the light guide plate and is spaced apart from an upper surface and a lower surface of the light guide plate.
10. The method of claim 9,
Wherein the first light emitting diode has irradiation light of 380 to 450 nm and the first wavelength region has a peak wavelength of 510 to 550 nm.
10. The method of claim 9,
Wherein the second light emitting diode device has irradiation light of 380 to 450 nm and the second wavelength region has a peak wavelength of 600 to 650 nm.
delete
KR1020150185945A 2015-06-05 2015-12-24 Light emitting diode package and light emiitiing diode package module having the same KR101816210B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020150185945A KR101816210B1 (en) 2015-12-24 2015-12-24 Light emitting diode package and light emiitiing diode package module having the same
US15/169,217 US9853017B2 (en) 2015-06-05 2016-05-31 Light emitting device package and light emitting device package module
US15/815,667 US10163870B2 (en) 2015-06-05 2017-11-16 Light emitting device package and light emitting device package module
US16/197,024 US20190206846A1 (en) 2015-06-05 2018-11-20 Light emitting device package and light emitting device package module including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150185945A KR101816210B1 (en) 2015-12-24 2015-12-24 Light emitting diode package and light emiitiing diode package module having the same

Publications (2)

Publication Number Publication Date
KR20170076104A KR20170076104A (en) 2017-07-04
KR101816210B1 true KR101816210B1 (en) 2018-02-21

Family

ID=59356769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150185945A KR101816210B1 (en) 2015-06-05 2015-12-24 Light emitting diode package and light emiitiing diode package module having the same

Country Status (1)

Country Link
KR (1) KR101816210B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102029808B1 (en) * 2018-12-14 2019-10-08 럭스피아(주) Light emitting device package
KR102168701B1 (en) 2019-03-08 2020-10-22 주식회사 유제이엘 Multi-color phosphor plate, light emitting diode package including the multi-color phosphor plate and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015076527A (en) * 2013-10-09 2015-04-20 シチズン電子株式会社 Led light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015076527A (en) * 2013-10-09 2015-04-20 シチズン電子株式会社 Led light emitting device

Also Published As

Publication number Publication date
KR20170076104A (en) 2017-07-04

Similar Documents

Publication Publication Date Title
US10784415B2 (en) Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same
KR102603695B1 (en) Light emitting device and vehicle lamp comprising the same
AU2017225120B2 (en) Light emitting device
KR101584201B1 (en) Semiconductor light emitting device
US20190165226A1 (en) Semiconductor element package
US10680143B2 (en) Optical plate, lighting device, and light source module
JP6673410B2 (en) LED module
KR20190031094A (en) Light emitting device package and lighting apparatus
US20180226552A1 (en) Light-emitting element package
CN107565009B (en) LED module
US9768363B2 (en) Light emitting device module
EP2333851B1 (en) Light emitting device, light emitting device package, and lighting system
KR20180131303A (en) Light emitting device package and light unit
KR20150129356A (en) Lighting device
KR20190083042A (en) Light emitting device package
US8933621B2 (en) Light emitting device
KR20150095430A (en) Light emitting diode package and light emitting device using the same
KR100616679B1 (en) A side view type led package
KR101816210B1 (en) Light emitting diode package and light emiitiing diode package module having the same
US20200335673A1 (en) Light-emitting device package and lighting device having same
KR102163987B1 (en) Light emitting device
KR20190034016A (en) Light emitting device package and lighting module
KR20120062512A (en) Led pakage and array, lcd module having thereof
KR102509061B1 (en) Light emitting device package
KR20190053523A (en) Light emitting device package, lighting device and method of manufacturing the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant