KR101807396B1 - Testing device for pellicle and method for testing using same - Google Patents

Testing device for pellicle and method for testing using same Download PDF

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KR101807396B1
KR101807396B1 KR1020160034688A KR20160034688A KR101807396B1 KR 101807396 B1 KR101807396 B1 KR 101807396B1 KR 1020160034688 A KR1020160034688 A KR 1020160034688A KR 20160034688 A KR20160034688 A KR 20160034688A KR 101807396 B1 KR101807396 B1 KR 101807396B1
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pellicle
support portions
film mirror
thin film
euv light
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KR1020160034688A
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KR20170110759A (en
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우동곤
안진호
홍성철
김정환
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한양대학교 산학협력단
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Priority to PCT/KR2017/002733 priority patent/WO2017164556A1/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/8422—Investigating thin films, e.g. matrix isolation method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/33—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges

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  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Pathology (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The method comprising the steps of: irradiating EUV (Extreme Ultraviolet) light to a multilayer thin film mirror of a light source unit, collecting and measuring first EUV light reflected from the multilayer thin film mirror by a detecting unit, placing a pellicle on the multilayer thin film mirror Collecting and measuring the second EUV light that is reflected by the multi-layer thin-film mirror and re-transmitted through the pellicle after the detection section transmits the pellicle, and the step 1 and second EUV light to determine whether the pellicle is defective or not, wherein the pellicle is placed on a pellicle stage located on the multi-layered film mirror, A method of inspecting a pellicle that minimizes contamination and damage of the multilayer thin film mirror due to contact of the pellicle is provided There.

Description

Technical Field [0001] The present invention relates to a pellicle inspection apparatus,

The present invention relates to a pellicle inspection apparatus and a method of inspecting the pellicle, and more particularly, to a pellicle inspection apparatus and a method of inspecting the pellicle, comprising a light source unit for irradiating the pellicle with EUV light, a reflection system for retransmitting the EUV light transmitted through the pellicle, And a detector for collecting and measuring the EUV light re-transmitted through the pellicle, and a method of inspecting the pellicle.

As the circuit line width of a semiconductor device is rapidly miniaturized, there is a limitation in forming a fine pattern with a liquid immersion ArF exposure apparatus using a light source of a 193 nm wavelength band currently used. In order to form a fine pattern without improving the light source and the exposure equipment, techniques such as double exposure or quadruple exposure have been applied. However, in the production of semiconductor devices where mass production is important, an increase in the number of processes, an increase in the process price, And a decrease in the number of sheets.

To solve these problems, a next-generation exposure apparatus using extreme ultraviolet lithography using an extreme ultraviolet ray having a wavelength of 13.5 nm is being developed. Reflective reticles, such as mirrors, are used instead of conventional transmissive reticles because light from a 13.5 nm wavelength used in extreme ultraviolet lithography techniques is absorbed by almost all materials. If impurities such as dust or foreign matter are adhered to the reticle, light is absorbed or reflected by the impurities, so that the transferred pattern is damaged, resulting in a problem that the performance and the yield of the semiconductor device or the liquid crystal display plate are lowered. Therefore, a method using a pellicle has been carried out in order to prevent impurities from adhering to the surface of the reticle. For this reason, researches on the development of pellicles having high transmittance and thin thickness characteristics against extreme ultraviolet rays are actively conducted.

However, since the pellicle for the extreme ultraviolet exposure process is an initial stage of research, it is necessary to provide a device for inspecting the basic characteristics of the pellicle and a method for detecting the defects of the pellicle. Inspection technology has not yet been established.

For example, in Korean Patent Registration No. KR1336946B1 (Application No. KR20120135492A, Applicant: Korean Basic Science Institute), local heat generated by a defect in a semiconductor element such as a substrate and a thin film is referred to as a sub-micron space A method of manufacturing a defect analysis apparatus for tracking and analyzing a defect position with high precision by superimposing the semiconductor fine pattern image on the semiconductor wafer by measuring the defect with a resolution and a non-contact method.

In order to improve the process efficiency of the semiconductor manufacturing process, there is a continuing research to apply a high-power light source to extreme ultraviolet lithography exposure equipment. For this reason, there is a growing demand for high performance extreme ultraviolet exposure process pellicles with high transmittance to improve the productivity of the exposure process. Therefore, it is necessary to study the pellicle inspecting apparatus and inspection method for measuring the permeability of the pellicle at a low cost by using the simplified apparatus and the easy operation method, and for evaluating the defectiveness of the pellicle.

Korean Patent Registration No. KR1336946B1

SUMMARY OF THE INVENTION It is an object of the present invention to provide a pellicle inspecting apparatus and a method of inspecting the pellicle inspecting apparatus capable of measuring the transmission of a pellicle to an EUV light source.

Another object of the present invention is to provide a pellicle inspecting apparatus and method for inspecting a pellicle in which an internal optical system is minimized.

It is another object of the present invention to provide a pellicle inspection apparatus including a reflection type optical system and a method of inspecting the pellicle inspection apparatus.

It is another object of the present invention to provide a pellicle inspecting apparatus and an inspecting method with reduced inspection time and inspection cost.

It is another object of the present invention to provide a pellicle inspecting apparatus and inspection method capable of evaluating image transfer characteristics of a mask.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above-described technical problem, the present invention provides a pellicle inspection method.

According to one embodiment, the pellicle inspection method includes the steps of irradiating EUV (Extreme Ultraviolet) light to a multilayer thin film mirror by the light source unit, collecting and measuring first EUV light reflected from the multilayer thin film mirror, A step of disposing a pellicle on a thin film mirror, the light source part irradiating the pellicle with the EUV light, the detection part being reflected on the multilayer thin film mirror after being transmitted through the pellicle, Collecting and measuring EUV light, and evaluating whether the pellicle is defective by calculating the transmittance of the pellicle through the first and second EUV light, wherein the pellicle is positioned on the multilayer thin film mirror Layered thin-film mirror on the pellicle stage, so that the contamination of the multilayer thin-film mirror due to the contact of the pellicle, And minimizing the phase.

According to one embodiment, the pellicle stage is disposed on first and second sidewalls of the multi-layered thin film mirror, and faces each other and extends in a first direction, and is perpendicular to the first and second directions First and second stages movable in a third direction and extending in the second direction from the upper surface of the first stage toward the second stage and being spaced apart from each other in the first direction and in direct contact with the pellicle wherein the first and second supports extend from the upper surface of the second stage toward the first stage in the second direction and are spaced apart from each other in the first direction and are in direct contact with the pellicle, 3 and a fourth support portion.

According to one embodiment, the first to fourth support portions are moved in the first direction on the first and second stages, and the gap between the first and second support portions and the gap between the third and fourth support portions, And the first to fourth supports are moved in the second direction on the first and second stages so that the gap between the first and third supports and the gap between the second and third supports 4 spacing between the supports.

According to one embodiment, the gap between the multilayer film mirror and the pellicle is adjusted as the first and second stages are moved in the third direction, and the first and second stages are adjusted according to the size of the pellicle. The gap between the support portions, the gap between the third and fourth support portions, the gap between the first and third support portions, and the gap between the second and fourth support portions may be adjusted .

According to one embodiment, the spacing between the multilayer film mirror and the pellicle may comprise between 0.5 and 5 mm.

According to one embodiment, the wavelength of the EUV light may be 13.5 nm.

According to one embodiment, the incident angle of the EUV light to the multilayer thin film mirror and the pellicle may be 6 °.

In order to solve the above-described technical problem, the present invention provides a pellicle inspection apparatus.

According to one embodiment, the pellicle inspecting apparatus includes a light source section for irradiating the pellicle with EUV light, a multilayer thin-film mirror for reflecting the EUV light transmitted through the pellicle, and a reflection mirror for reflecting the pellicle And a detector for collecting and measuring the retransmitted EUV light, wherein the pellicle stage supports the pellicle to separate the pellicle from the multilayer film mirror.

According to one embodiment, the pellicle stage is disposed on first and second sidewalls of the multi-layered thin film mirror, and faces each other and extends in a first direction, and is perpendicular to the first and second directions First and second stages movable in a third direction and extending in the second direction from the upper surface of the first stage toward the second stage and being spaced apart from each other in the first direction and in direct contact with the pellicle wherein the first and second supports extend from the upper surface of the second stage toward the first stage in the second direction and are spaced apart from each other in the first direction and are in direct contact with the pellicle, 3 and a fourth support portion.

According to one embodiment, the first to fourth support portions are moved in the first direction on the first and second stages, and the gap between the first and second support portions and the gap between the third and fourth support portions, And the first to fourth supports are moved in the second direction on the first and second stages so that the gap between the first and third supports and the gap between the second and third supports 4 spacing between the supports.

According to one embodiment, the gap between the multilayer film mirror and the pellicle is adjusted as the first and second stages are moved in the third direction, and the first and second stages are adjusted according to the size of the pellicle. The gap between the support portions, the gap between the third and fourth support portions, the gap between the first and third support portions, and the gap between the second and fourth support portions may be adjusted .

According to one embodiment, the spacing between the multilayer film mirror and the pellicle may comprise between 0.5 and 5 mm.

According to one embodiment, the wavelength of the EUV light emitted from the light source unit to the pellicle may be 13.5 nm.

According to one embodiment, the pellicle inspecting apparatus further comprises an optical lens for adjusting the path of the EUV light in a path of the EUV light emitted from the light source unit to the pellicle and a path of the EUV light reflected from the pellicle to the detection unit .

According to an embodiment of the present invention, there is provided a method for manufacturing a pellicle, which comprises a light source for irradiating a pellicle with EUV light, a multilayer thin film mirror for reflecting the EUV light transmitted through the pellicle, a pellicle stage for separating the pellicle from the multilayer thin- And a detector for collecting and measuring the EUV light re-transmitted through the pellicle after being reflected from the multilayer thin film mirror, and a method of manufacturing the pellicle inspection apparatus.

First, the pellicle is brought into direct contact with the multilayer thin film mirror by placing the pellicle on the pellicle stage located on the multilayer thin film mirror, thereby preventing the multilayer thin film mirror from being contaminated and / or damaged.

Further, by moving the first and second stages of the pellicle stage and the first to fourth supporting portions by a simple operation, the gap between the pellicle and the multilayer thin film mirror can be easily adjusted, and the pellicle The permeability of the pellicle can be easily measured regardless of the size of the pellicle.

In addition, since the EUV light transmitted through the pellicle is retransmitted to the pellicle by using the multilayer thin film mirror of the reflection type structure, when the pellicle is mounted on the mask while being spaced apart, the image transfer characteristic of the mask is evaluated . Therefore, there is a high advantage in utilization of the pellicle for the extreme ultraviolet exposure process.

The wavelength of the EUV light generated by the light source unit and the incident angle of the EUV light irradiated to the pellicle are determined by the wavelength of the light source generated in the exposure apparatus used in the conventional EUV exposure process measurement apparatus for pellicle penetration, May be the same as the incident angle of the light source. In other words, the exposure conditions of the pellicle inspection apparatus according to the embodiment of the present invention may be the same as the exposure conditions of the conventional apparatus for measuring pellicle penetration for the EUV exposure process. Accordingly, the permeability of the pellicle can be efficiently measured with a simplified process and a reduced cost in the same permeability measurement environment as in the case of using an exposing machine which is expensive equipment.

1 is a flowchart for explaining a pellicle inspection method according to an embodiment of the present invention.
2 is a view for explaining a step of collecting and measuring a first EUV (Extreme ultraviolet) light in the inspection method of a pellicle according to an embodiment of the present invention.
3 is a view for explaining a step of collecting and measuring the second EUV light in the inspection method of the pellicle according to the embodiment of the present invention.
4 is a view for explaining a method of operating the pellicle inspecting apparatus according to the embodiment of the present invention when the size of the pellicle is relatively large.
5 is a view for explaining a method of operating the pellicle inspecting apparatus according to the embodiment of the present invention when the size of the pellicle is relatively small.
6 is a view for explaining a conventional pellicle transmittance measuring apparatus for EUV exposure process of a transmission type structure.
FIG. 7 is an image showing a measuring point of permeability of a pellicle in an experiment of measuring the permeability of the pellicle inspecting apparatus according to the embodiment of the present invention.
8 is a graph showing measured values of permeability of pellicles having different thicknesses of the pellicle inspecting apparatus according to the embodiment of the present invention.
9 is an image showing an image transfer characteristic of an EUV mask for a pellicle inspection apparatus according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

FIG. 1 is a flow chart for explaining an inspection method of a pellicle according to an embodiment of the present invention. FIG. 2 is a flowchart illustrating a method of inspecting a pellicle according to an embodiment of the present invention, collecting and measuring a first EUV (Extreme ultraviolet) FIG. 3 is a view for explaining the step of collecting and measuring the second EUV light in the pellicle inspection method according to the embodiment of the present invention, and FIG. 4 is a view for explaining the step of collecting and measuring the second EUV light when the size of the pellicle is relatively large FIG. 5 is a view for explaining a method of operating the pellicle inspecting apparatus according to the embodiment of the present invention, and FIG. 5 is a view for explaining a method of operating the pellicle inspecting apparatus according to an embodiment of the present invention when the size of the pellicle is relatively small. And FIG. 6 is a view for explaining an apparatus for measuring the pellicle permeability for EUV exposure of a conventional transmission type structure.

1 to 5, the EUV light is irradiated to the multilayer thin film mirror 20 by the light source unit 10 and the first EUV light reflected from the multilayer thin film mirror 20 by the detection unit 40 is collected And may be measured (SlOO). Specifically, collecting and measuring the first EUV light may include irradiating the multilayer thin film mirror 20 with the EUV light, reflecting the EUV light by the multilayer thin film mirror 20, And the detecting unit 40 may collect and measure the first EUV light.

The step of irradiating the EUV light to the multilayer thin film mirror 20 may include irradiating the EUV light generated in the light source part 10 to the multilayer thin film mirror 20, have. The wavelength of the EUV light irradiated on the multilayer thin film mirror 20 in the light source unit 10 may be the same as the wavelength of the light source generated in the exposure apparatus used in the conventional EUV exposure process pellicle transmittance measuring apparatus. Accordingly, the exposure conditions of the pellicle inspection apparatus according to the embodiment of the present invention can be the same as the exposure conditions of the conventional apparatus for measuring pellicle penetration for the EUV exposure process. According to one embodiment, the wavelength of the EUV light generated in the light source unit 10 may be about 13.5 nm.

The light source unit 10 may further include an optical lens for adjusting the path of the EUV light in the path of the EUV light emitted from the light source unit 10 to the multilayer thin film mirror 20. According to one embodiment, the optical lens may be a spherical mirror, a planar mirror, a concave lens, and / or a convex lens. The path of the light is controlled through the optical lens so that the angle of incidence of the EUV light irradiated on the multilayer thin film mirror 20 is determined by the angle of incidence of the light source irradiated onto the pellicle by the exposure device used in the conventional EUV exposure process measurement device for pellicle penetration, . ≪ / RTI > Thus, as described above, the exposure conditions of the pellicle inspection apparatus according to the embodiment of the present invention may be the same as the exposure conditions of the conventional apparatus for measuring pellicle penetration for the EUV exposure process. According to one embodiment, the incident angle of the EUV light to the multilayer thin film mirror 20 may be about 6 degrees.

According to an embodiment, when the incident angle of the EUV light is about 6 °, when the mask is attached to the pellicle inspection apparatus according to the embodiment of the present invention, the image electron characteristics of the mask can be evaluated.

The step of reflecting the EUV light by the multilayer thin film mirror 20 is performed by the multilayer thin film mirror 20 having a reflective structure so that the EUV light irradiated from the light source part 10 to the multilayer thin film mirror 20 At least a portion of the light being reflected. According to one embodiment, the multilayer thin film mirror 20 may be a structure in which a molybdenum (Mo) layer and a silicon (Si) layer are alternately laminated.

Also, a pellicle stage 30 may be disposed on the multilayer thin film mirror 20. The pellicle stage 30 can arrange the pellicle 100, which will be described later, from the multilayer thin-film mirror 20. Accordingly, the contamination and / or damage of the multilayer thin-film mirror 20 due to the direct contact between the pellicle 100 and the multilayer thin-film mirror 20 can be minimized. Specifically, the pellicle stage 30 may include first and second stages 31 and 32, first and second support members 33, and third and fourth support members 34 .

The first and second stages 31 and 32 are disposed on the first and second sidewalls of the multilayer thin film mirror 20 and face each other and extend in a first direction . According to one embodiment, the first and second stages 31 and 32 can move in a third direction (z direction) perpendicular to the first and second directions (x direction, y direction). As the first and second stages 31 and 32 are moved in the third direction (z direction), the interstices between the multilayer thin film mirror 20 and the pellicle 100 can be easily adjusted. According to one embodiment, the distance between the multilayer thin film mirror 20 and the pellicle 100 may be 0.5 to 5 mm.

The first and second support portions 33 are portions directly in contact with the pellicle 100 disposed on the pellicle stage 30 and are disposed on the upper surface of the first stage 31 And may extend in the second direction (y direction) toward the second stage 32. [ The first and second support portions 33 may be spaced apart from each other in the first direction (x direction). The first and second support portions 33 can be moved in the first and second directions (x direction, y direction) on the first stage 31. As the first and second support portions 33 are moved in the first direction (x direction), the gap between the first and second support portions 33 can be easily adjusted. Also, as the first and second support portions 33 are moved in the second direction (y direction), the first and second support portions 33 and the third and fourth support portions 34 can be easily adjusted.

The third and fourth support portions 34 are portions directly contacting the pellicle 100 disposed on the pellicle stage 30 in the same manner as the first and second support portions 33, And may extend in the second direction (y direction) toward the first stage 31. The first stage 31 may be disposed on the upper surface of the second stage 32, The third and fourth support portions 34 may be spaced apart from each other in the first direction (x direction). The third and fourth support portions 34 may move in the first and second directions (x direction, y direction) on the second stage 32. [ As the third and fourth support portions 34 are moved in the first direction (x direction), the gap between the third and fourth support portions 34 can be easily adjusted. As the third and fourth support portions 34 are moved in the second direction (y direction), the first and second support portions 33, the third and fourth support portions 34, Can be easily adjusted.

As described above, according to the size of the pellicle 100 to be measured, an interval between the first and second supporting portions 33, in which the pellicle 100 is directly in contact with the third pellicle 100, The distance between the first and third support portions 34 and 34 and the distance between the first and third support portions 33 and 34 and the distance between the second and fourth support portions 33 and 34 can be adjusted have. In other words, according to the size of the pellicle 100 to be measured, the distances between the first to fourth supporting portions 33 and 34 are easily adjusted so that the first to fourth supporting portions 33 and 34 Can be determined.

The step of the detector (40) collecting and measuring the first EUV light comprises the step of measuring the intensity of the first EUV light reflected from the multilayer thin film mirror (20) by the detector (40) ≪ / RTI > The light emission intensity value of the first EUV light measured by the detection unit 40 may be used for calculating the transmittance of the pellicle 100 of the pellicle inspection apparatus according to the embodiment of the present invention, which will be described later.

According to one embodiment, the detection unit 40 may include a reflectivity meter for collecting the first EUV light reflected from the multilayer thin film mirror 20 and then converting the first EUV light into an electric signal and outputting the electric signal, And a detector for detecting a defective area. For example, the reflectivity meter may be a photodiode.

According to an embodiment, the detection unit 40 may include, in the path of the first EUV light reflected by the multi-layer thin-film mirror 20 and collected by the detection unit 40, And may further include an optical lens. By the optical lens, the first EUV light reflected by the multilayer thin-film mirror 20 can reach the detection part 40 efficiently. According to one embodiment, the optical lens may be a spherical mirror, a planar mirror, a concave lens, and / or a convex lens, as described above.

The pellicle 100 may be placed on the multilayer mirror 20 (S200). As described above, the pellicle 100 may be disposed on the pellicle stage 30 located on the multilayer thin-film mirror 20. Accordingly, the pellicle 100 is spaced apart from the multilayer thin-film mirror 20, and the contamination of the multilayer thin-film mirror 20 due to the direct contact between the pellicle 100 and the multilayer thin- And / or damage can be minimized.

As described above, the pellicle 100 can be placed in direct contact with the upper surface of the first to fourth supporting portions 33, 34 of the pellicle stage 30. 4 and 5, depending on the size of the pellicle 100 to be measured, the first to fourth supporting portions 33 and 34 are formed on the first and second stages 31 and 32 The distance between the first and second support portions 33 and the distance between the third and fourth support portions 34 can be adjusted in the first direction (x direction). According to an embodiment, the gap between the first and second support portions 33 and the gap between the third and fourth support portions 34 may be 0 to 100 mm.

The first to fourth supporting portions 33 and 34 are moved in the second direction (y direction) on the first and second stages 31 and 32 according to the size of the pellicle 100 The distance between the first and third support portions 33 and 34 and the distance between the second and fourth support portions 33 and 34 can be adjusted. According to an embodiment, the distance between the first and third support portions 33 and 34 and the distance between the second and fourth support portions 33 and 34 may be 0 to 100 mm.

In addition, the first and second stages 31 and 32 may be moved in the third direction (z direction) so that the distance between the multilayer thin film mirror 20 and the pellicle 100 can be adjusted. According to one embodiment, the distance between the multilayer thin film mirror 20 and the pellicle 100 may be 0.5 to 5 mm.

The EUV light is irradiated to the pellicle 100 by the light source unit 10 and transmitted through the pellicle 100 by the detection unit 40 and then reflected by the multilayer thin film mirror 20 to be reflected by the pellicle 100 The second EUV light may be collected and measured (S300). The step of collecting and measuring the second EUV light may include irradiating the pellicle 100 with the EUV light and irradiating the EUV light transmitted through the pellicle 100 to the multilayer thin film mirror 20 Retransmitting the second EUV light to the pellicle 100, and collecting and measuring the second EUV light.

The step of irradiating the pellicle 100 with the EUV light may include irradiating the pellicle 100 with the EUV light generated from the light source unit 10. [ As described above in step S100, the wavelength of the EUV light irradiated to the pellicle 100 in the light source unit 10 is the same as the wavelength of the light source generated in the exposure apparatus used in the conventional EUV exposure process pellicle transmittance measurement apparatus can do. According to one embodiment, the wavelength of the EUV light generated in the light source unit 10 may be about 13.5 nm.

Since the path of the light is adjusted through the optical lens included in the light source unit 10 as described above, the incident angle of the EUV light irradiated on the pellicle 100 is measured by a conventional pellicle permeability measuring apparatus for EUV exposure process May be the same as the incident angle of the light source irradiated to the pellicle by the exposure device used in the exposure apparatus. According to one embodiment, the incident angle of the EUV light to the pellicle 100 may be about 6 degrees.

The step of retransmitting the EUV light transmitted through the pellicle 100 to the pellicle 100 by the multilayer thin-film mirror 20 includes the step of allowing at least a part of the EUV light transmitted through the pellicle 100 to pass through the multi- Reflected by the pellicle 20 and retransmitting the pellicle 100.

The detecting and collecting of the second EUV light by the detector 40 may be performed by the detecting unit 40 such that the second EUV light is reflected from the multilayer thin film mirror 20 and reflected by the second EUV And measuring the light emission intensity of the light. The light emission intensity value of the second EUV light measured by the detector 40 is a value of the light emission intensity value of the first EUV light measured with respect to the multilayer thin film mirror 20 before the pellicle 100 is disposed And can be used for calculating the transmittance of the pellicle 100 of the pellicle inspection apparatus according to the embodiment of the present invention.

According to one embodiment of the present invention there is provided a reflective type structure in which the EUV light transmitted through the pellicle 100 is retransmitted to the pellicle 100 using the multilayer thin film mirror 20 The pellicle inspecting apparatus can easily evaluate image transfer characteristics of the mask when the mask is attached to the pellicle 100. 6, since the EUV light is transmitted only once to the pellicle 100, the mask is attached to the pellicle 100. As a result, , It may be impossible to evaluate the image transfer characteristics of the mask.

In step S400, whether or not the pellicle 100 is defective can be evaluated by calculating the transmittance of the pellicle 100 through the first and second EUV light. The light emission intensity value of the first EUV light measured by the detection unit 40 and the pellicle 100 in step S300 are arranged before the pellicle 100 is disposed in step S100, The transmittance of the pellicle 100 can be calculated through a ratio of the light emission intensity value of the second EUV light measured by the first EUV light. The formula for calculating the permeability of the pellicle 100 is shown in Equation 1 below.

[Formula 1]

Figure 112016027980603-pat00001

Hereinafter, a pellicle inspection apparatus according to an embodiment of the present invention will be described.

1 to 5, a pellicle inspecting apparatus according to an embodiment of the present invention will be described with reference to FIGS. 1 to 5, .

1 to 5, a pellicle inspection apparatus according to an embodiment of the present invention includes the light source unit 10, the multilayer thin film mirror 20, the pellicle stage 30, and the detection unit 40 can do.

The light source unit 10 can irradiate the pellicle 100 with the EUV light. As described above, the wavelength of the EUV light irradiating the pellicle 20 in the light source unit 10 may be the same as the wavelength of the light source generated in the exposure apparatus used in the conventional apparatus for measuring pellicle permeability for EUV exposure . According to one embodiment, the wavelength of the EUV light generated in the light source unit 10 may be about 13.5 nm.

The light source unit 10 may further include an optical lens for adjusting the path of the EUV light in the path of the EUV light emitted from the light source unit 10 to the pellicle 100. According to one embodiment, the optical lens may be a spherical mirror, a planar mirror, a concave lens, and / or a convex lens. The path of the light is controlled through the optical lens so that the incident angle of the EUV light irradiated to the pellicle 100 is the same as the incident angle of the light source irradiated to the pellicle by the exposure device used in the conventional EUV exposure process pellicle transmittance measurement apparatus can do. According to one embodiment, the incident angle of the EUV light to the pellicle 100 may be about 6 degrees.

According to one embodiment, when the incident angle of the EUV light is about 6 degrees, when the mask is attached to the pellicle inspection apparatus according to the embodiment of the present invention, the image electron characteristics of the mask can be evaluated.

The multilayer thin film mirror 20 may retransmit at least a part of the EUV light transmitted through the pellicle 100 to the pellicle 100. The multilayer thin film mirror 20 may have the reflective structure. Accordingly, when the mask is attached to the pellicle inspecting apparatus according to the embodiment of the present invention, the image transfer characteristic of the mask can be evaluated. According to one embodiment, the multilayer thin film mirror 20 may be a structure in which a molybdenum (Mo) layer and a silicon (Si) layer are alternately laminated.

The pellicle stage (30) can separate the pellicle (100) from the multilayer thin film mirror (20). Accordingly, the contamination and / or damage of the multilayer thin-film mirror 20 due to the direct contact between the pellicle 100 and the multilayer thin-film mirror 20 can be minimized. In addition, the pellicle stage 30 can physically support the pellicle 100.

As described above, the pellicle stage 30 includes the first and second stages 31 and 32, the first and second support portions 33 and the third and fourth support portions 34, . ≪ / RTI >

As described with reference to Figs. 1-5, the first and second stages 31 and 32 are arranged on the first and second sides of the multilayer thin-film mirror 20, , And may extend in the first direction (x direction). According to one embodiment, the first and second stages 31 and 32 can move in the third direction (z direction) perpendicular to the first and second directions (x direction, y direction). As the first and second stages 31 and 32 are moved in the third direction (z direction), the distance between the multilayer thin film mirror 20 and the pellicle 100 can be easily adjusted. According to one embodiment, the distance between the multilayer thin film mirror 20 and the pellicle 100 may be 0.5 to 5 mm.

Further, as described above, the pellicle 100 can be placed in direct contact with the upper surface of the first to fourth supporting portions 33, 34 of the pellicle stage 30. [ 4 and 5, depending on the size of the pellicle 100 to be measured, the first to fourth supporting portions 33 and 34 are formed on the first and second stages 31 and 32 The spacing between the first and second support portions 33 and the spacing between the third and fourth support portions 34 can be easily adjusted in the first direction (x direction). According to an embodiment, the gap between the first and second support portions 33 and the gap between the third and fourth support portions 34 may be 0 to 100 mm.

The first to fourth supporting portions 33 and 34 are moved in the second direction (y direction) on the first and second stages 31 and 32 according to the size of the pellicle 100 The gap between the first and third support portions 33 and 34 and the gap between the second and fourth support portions 33 and 34 can be easily adjusted. According to an embodiment, the distance between the first and third support portions 33 and 34 and the distance between the second and fourth support portions 33 and 34 may be 0 to 100 mm.

The spacing between the first to fourth support portions 33 and 34 is easily adjusted according to the size of the pellicle 100 to be measured so that the first to fourth support portions 33 and 34 Can be determined.

The detection unit 40 may collect and measure the second EUV light that has been reflected from the multilayer thin film mirror 20 and then retransmitted through the pellicle 100. The light emission intensity value of the second EUV light measured by the detection unit 40 may be the sum of the light emission intensity value of the first EUV light measured by the detection unit 40 before the pellicle 100 is disposed, Can be used for calculating the transmittance for the light emitting device 100.

According to one embodiment, the detection unit 40 may include the reflectivity meter for collecting the first EUV light reflected from the multilayer thin film mirror 20 and then converting the first EUV light into an electric signal and outputting the electric signal information, And the detector for detecting a defective area. For example, the reflectivity meter may be the photodiode.

According to an embodiment, the detecting unit 40 may detect the direction of the first EUV light reflected by the multilayer thin-film mirror 20 and the path of the second EUV light re-transmitted to the pellicle 100, And the optical lens for adjusting the paths of the first and second EUV lights. By the optical lens, the first and second EUV light can reach the detection unit 40 efficiently. According to one embodiment, the optical lens may be a spherical mirror, a planar mirror, a concave lens, and / or a convex lens, as described above.

Unlike the embodiment of the present invention described above, conventionally, the transmittance of a pellicle for an extreme ultraviolet exposure process is measured using an exposure machine. In the case of using the exposure machine, serious damage is caused to the exposer, which is expensive equipment, due to contaminants on the surface of the pellicle and / or destruction of the pellicle.

In addition, since the EUV mask is of the reflection type, the apparatus for measuring the pellicle transmittance for the EUV exposure process of the transmission type structure can not confirm the image transfer characteristics of the mask in the conventional pellicle permeability measurement apparatus for EUV exposure process. Accordingly, the pellicle penetration apparatus for the EUV exposure process of the transmission type structure can be used only for the measurement of the transparency of the pellicle. Therefore, the use of the pellicle penetration apparatus in the extreme ultraviolet exposure process is limited.

 However, as described above, according to the embodiment of the present invention, the light source portion 10 for irradiating the pellicle 100 with EUV light, the multilayer thin film mirror 20 for reflecting the EUV light transmitted through the pellicle 100, A pellicle stage 30 for separating the pellicle from the multilayer thin film mirror, and a detector for collecting and measuring the EUV light, which is reflected from the multilayer thin film mirror 20 and retransmitted to the pellicle 100 A pellicle inspecting apparatus, and a method of manufacturing the same, can be provided.

First, the pellicle 100 is spaced apart from the pellicle stage 30 located on the multilayer thin film mirror 20 so that the pellicle 100 is in direct contact with the multilayer thin film mirror 20, It is possible to prevent the mirror 20 from being contaminated and / or damaged.

By moving the first and second stages 31 and 32 and the first to fourth supporting portions 33 and 34 of the pellicle stage 30 by a simple operation, the pellicle 100 and the multi- The distance between the mirrors 20 can be easily controlled and the permeability of the pellicle 100 can be easily measured regardless of the size of the pellicle 100 to be measured.

In addition, since the EUV light transmitted through the pellicle 100 is re-transmitted to the pellicle 100 by using the multilayer thin-film mirror 20 having a reflective structure, the mask is mounted on the pellicle 100 , The image transfer characteristic of the mask can be evaluated. Therefore, there is a high advantage in utilization of the pellicle for the extreme ultraviolet exposure process.

The wavelength of the EUV light generated in the light source unit 10 and the incident angle of the EUV light irradiated to the pellicle 100 are determined by the wavelength of the light source generated in the exposure apparatus used in the conventional EUV exposure process measuring device for pellicle penetration, And may be the same as the incident angle of the light source irradiated on the pellicle. In other words, the exposure conditions of the pellicle inspection apparatus according to the embodiment of the present invention may be the same as the exposure conditions of the conventional apparatus for measuring pellicle penetration for the EUV exposure process. Accordingly, the permeability of the pellicle 100 can be measured efficiently in a simplified process and at a reduced cost in the same permeability measurement environment as in the case of using an exposing machine which is expensive equipment.

Hereinafter, a characteristic evaluation of the pellicle inspection apparatus according to the embodiment of the present invention will be described.

FIG. 7 is an image showing a measuring point of permeability of a pellicle in an experiment of measuring the permeability of the pellicle inspecting apparatus according to the embodiment of the present invention.

7, pellicles having different thicknesses (43 nm, 93 nm and 175 nm) are applied to a pellicle inspection apparatus including a light source section, a multilayer thin film mirror, a pellicle stage, and a detection section, The permeability of the pellicle was evaluated with respect to the measurement point of 5.

8 is a graph showing measured values of permeability of pellicles having different thicknesses of the pellicle inspecting apparatus according to the embodiment of the present invention.

7, the light intensity of the first EUV light reaching the detection section before the pellicle is applied to the pellicle inspection apparatus according to the embodiment of the present invention, And the emission intensity of the second EUV light reaching the detection unit after the pellicle was applied to the inspection apparatus was measured. The transmittance of the pellicle having different thicknesses was calculated through the ratio of the emission intensities of the first and second EUV light.

In addition, the permeability values of the pellicles having different thicknesses measured through the above-described experiments were compared with those of the pellicles having different thicknesses derived through simulation. The transmittance values measured through the above-described experiments and the transmittance values derived through simulation are shown in Table 1 below.

T% (measurement)
(CSM) T% (simulation)
(EM-Stack) Pellicle A (43 nm) 78.1% 78.5% Pellicle B (93 nm) 59.8% 59.8% Pellicle C (175 nm) 30.3% 30.3%

8, when the thickness of the pellicle is 43 nm, the permeability of the pellicle is 78.1%, and the thickness of the pellicle is 93 nm, with respect to the measurement points 1 to 5 of the pellicle, Was 59.8%, and when the thickness of the pellicle was 175 nm, it was confirmed that the permeability of the pellicle was 30.3%. As a result, it was found that the permeability of the pellicle increases as the thickness of the pellicle becomes thinner.

Also, as shown in Table 1, when the permeability of the pellicle having a different thickness is derived through the simulation, when the thickness of the pellicle is 43 nm with respect to the measurement points 1 to 5 of the pellicle, The permeability of the pellicle was 78.5%. When the thickness of the pellicle was 93 nm, the permeability of the pellicle was 59.8%. When the thickness of the pellicle was 175 nm, the permeability of the pellicle was found to be 30.3%. Accordingly, it was found that the transmittance value of the pellicle measured through the above-described experiment was similar to the transmittance value of the pellicle obtained through the simulation.

9 is an image showing an image transfer characteristic of an EUV mask for a pellicle inspection apparatus according to an embodiment of the present invention.

After applying the EUV mask with the pellicle to the pellicle inspection apparatus according to the embodiment of the present invention, the image transfer characteristics of the EUV mask were evaluated using the HIO algorithm.

9, when an EUV mask having a pellicle attached thereto is applied to the pellicle inspection apparatus according to the embodiment of the present invention, the influence of the pellicle on image transfer characteristics of the mask can be improved by software for restoring an image from the diffraction pattern. We can see that the analysis is possible. This is because the incident angle of the EUV light to the pellicle generated in the light source unit used in the pellicle inspecting apparatus according to the embodiment of the present invention is different from the incident angle of the light source generated in the exposure apparatus used in the conventional pellicle penetration testing apparatus for ultra- The pellicle inspection apparatus according to the embodiment of the present invention uses the multilayer thin film mirror of the reflection type structure to judge whether or not the EUV light transmitted through the pellicle is retransmitted to the pellicle do.

As described above, according to the embodiment of the present invention, the pellicle is provided with the light source portion for irradiating the pellicle with EUV light, the multilayer thin film mirror for reflecting the EUV light transmitted through the pellicle, When the pellicle inspection device including the pellicle stage for collecting and measuring the EUV light re-transmitted through the pellicle after being reflected from the multilayer thin-film mirror is used, the pellicle is simulated with respect to the pellicle It is possible to obtain a permeability value similar to the derived permeability value, that is, a highly reliable permeability value. In addition, when the mask having the pellicle is applied to the pellicle inspecting apparatus, the image transfer characteristic to the mask can be evaluated as well as the permeability to the pellicle.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

10:
20: multilayer thin film mirror
30: Pellicle stage
31: First stage
32: second stage
33: first and second supporting portions
34: third and fourth supporting portions
40:
50: chamber
60: X-ray mirror
70: mask
80: X-ray CCD
100: Pellicle

Claims (14)

A step in which the light source irradiates EUV (Extreme Ultraviolet) light to the multilayer thin film mirror, and the detector collects and measures the first EUV light reflected from the multilayer thin film mirror;
Disposing a pellicle on the multilayer thin film mirror;
Collecting and measuring second EUV light that is reflected by the multi-layer thin-film mirror and is transmitted again through the pellicle after the light source irradiates the pellicle with the EUV light, and the detector transmits the pellicle; And
And evaluating whether or not the pellicle is defective by calculating the transmittance of the pellicle through the first and second EUV light,
Wherein the pellicle is spaced apart from the multilayer thin film mirror on a pellicle stage located on the multilayer thin film mirror to minimize contamination and damage of the multilayer thin film mirror due to contact of the pellicle.
The method according to claim 1,
The pellicle stage,
A plurality of thin film mirrors disposed on the first and second sidewalls of the multilayer thin film mirror and facing each other and extending in a first direction and a second direction perpendicular to the first direction and parallel to a normal direction of the first and second side surfaces, First and second stages extending in a third direction perpendicular to the first and second directions;
First and second supports extending from the upper surface of the first stage toward the second stage in the second direction and spaced apart from each other in the first direction and in direct contact with the pellicle; And
And a third and fourth support portions extending in the second direction from the upper surface of the second stage toward the first stage and spaced from each other in the first direction and in direct contact with the pellicle .
3. The method of claim 2,
The first to fourth support portions are moved in the first direction on the first and second stages so that the gap between the first and second support portions and the gap between the third and fourth support portions are adjusted ,
The first to fourth support portions are moved in the second direction on the first and second stages so that the gap between the first and third support portions and the gap between the second and fourth support portions are adjusted The method of inspecting the pellicle.
The method of claim 3,
Wherein an interval between the multilayer thin film mirror and the pellicle is adjusted as the first and second stages are moved in the third direction,
Wherein the distance between the first and second support portions, the distance between the third and fourth support portions, the distance between the first and third support portions, and the distance between the second and fourth support portions, Wherein the distance between the pellicle and the pellicle is adjusted.
5. The method of claim 4,
Wherein the distance between the multilayer film mirror and the pellicle is 0.5 to 5 mm.
The method according to claim 1,
Wherein the wavelength of the EUV light is 13.5 nm.
The method according to claim 1,
And the incident angle of the EUV light to the multilayer thin film mirror and the pellicle is 6 °.
A light source unit for irradiating the pellicle with EUV light;
A multilayer thin film mirror for reflecting the EUV light transmitted through the pellicle; And
And a detector for collecting and measuring the EUV light re-transmitted through the pellicle after being reflected from the multilayer thin film mirror,
And a pellicle stage for supporting the pellicle to separate the pellicle from the multilayer thin film mirror.
9. The method of claim 8,
The pellicle stage,
A plurality of thin film mirrors disposed on the first and second sidewalls of the multilayer thin film mirror and facing each other and extending in a first direction and a second direction perpendicular to the first direction and parallel to a normal direction of the first and second side surfaces, First and second stages extending in a third direction perpendicular to the first and second directions;
First and second supports extending from the upper surface of the first stage toward the second stage in the second direction and spaced apart from each other in the first direction and in direct contact with the pellicle; And
And third and fourth supports extending from the upper surface of the second stage toward the first stage in the second direction and spaced apart from each other in the first direction and in direct contact with the pellicle.
10. The method of claim 9,
The first to fourth support portions are moved in the first direction on the first and second stages so that the gap between the first and second support portions and the gap between the third and fourth support portions are adjusted ,
The first to fourth support portions are moved in the second direction on the first and second stages so that the gap between the first and third support portions and the gap between the second and fourth support portions are adjusted The pellicle inspection apparatus comprising:
11. The method of claim 10,
Wherein an interval between the multilayer thin film mirror and the pellicle is adjusted as the first and second stages are moved in the third direction,
Wherein the distance between the first and second support portions, the distance between the third and fourth support portions, the distance between the first and third support portions, and the distance between the second and fourth support portions, Wherein the pellicle inspecting apparatus includes a pellicle inspecting apparatus.
12. The method of claim 11,
Wherein the distance between the multilayer film mirror and the pellicle is 0.5 to 5 mm.
9. The method of claim 8,
And the wavelength of the EUV light emitted from the light source unit to the pellicle is 13.5 nm.
9. The method of claim 8,
Further comprising an optical lens for adjusting the path of the EUV light in a path of the EUV light emitted from the light source unit to the pellicle and a path of the EUV light reflected from the pellicle to the detection unit.
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