KR101796146B1 - MIT Transistor system including critical current supply devices - Google Patents

Abstract

The present invention discloses an MIT transistor system including an MIT critical current supplying element that causes an MIT between a control terminal and an outlet terminal to facilitate the operation of a metal-insulator transition (MIT) transistor . The current supply according to the present invention supplies the threshold current for causing the MIT phenomenon to occur between the control terminal and the output terminal of the metal-insulator transition transistor.

Description

[0001] The present invention relates to a metal-insulator transition transistor system including a critical current supplying element,

The present invention relates to a transistor system, and more particularly to driving a metal-insulator transition transistor.

Typically, one of the representative electronic devices is a three-terminal transistor. This transistor operates on the basis of semiconductor characteristics.

However, the semiconductor power device should have a characteristic of flowing a large current, but it may generate a lot of heat even when a large current does not flow. When the size of the transistor is reduced to nano-scale, a short channel effect is generated, and it is difficult to operate as a transistor. The demand for devices that exceed the limitations of such electronic devices has been increased. So many scholars are working on the study of limit overcoming devices.

One of the principles of this limit overcoming element is the metal-insulator transition (MIT) principle. First, an MIT transistor which does not use a field effect using a Hole-driven MIT phenomenon is disclosed in Korean Patent Application No. 2012-0073002 and entitled "Applied Physics Letters 103, 173501 (2013); http: //scitation.aip.org lt; / RTI > However, there must be a supply of critical currents necessary to cause the MIT phenomenon.

Therefore, a technique capable of supplying a critical current more easily is desired.

A problem to be solved by the present invention is to provide a current supplier capable of supplying a critical current necessary for an MIT transistor to cause an MIT phenomenon, thereby making it easier and more convenient to operate the MIT transistor.

Another object of the present invention is to provide an MIT transistor system capable of smoothly driving an MIT transistor.

In the metal-insulator transition transistor system according to the embodiment of the present invention,

Metal-insulator transition transistor; And

And a current supplier for supplying a critical current for causing a metal-insulator transition (MIT) phenomenon to occur between the control terminal and the output terminal of the metal-insulator transition transistor.

According to an embodiment of the present invention, the current supply may include a transistor that receives a pulse input to generate the threshold current.

In an embodiment of the present invention, the transistor receives the pulse input signal as a base as an NPN, and a collector is connected to an input terminal of the metal-insulator transition transistor (when using an NPN transistor) And a bipolar transistor coupled to the control terminal of the insulator transition transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal as a base as a PNP, and an emitter is connected to the input terminal of the metal-insulator transition transistor (when NPN transistor is used) And a bipolar transistor coupled to the control terminal of the insulator transition transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal as a base as a PNP, and an emitter is connected to the control terminal of the metal-insulator transition transistor (when using a PNP transistor) And may include a connected bipolar transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal as a base as NPN, the collector is connected to the control terminal of the metal-insulator transition transistor (when using a PNP transistor), and the emitter is connected to ground And may include a connected bipolar transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal to a gate, a drain is connected to an input terminal of the metal-insulator transition transistor (when using an NPN bipolar transistor), and a source is connected to the metal- And an N-type field effect transistor coupled to the control terminal of the transition transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal to a gate, the drain is connected to the control terminal of the metal-insulator transition transistor (when using a PNP bipolar transistor), the source is connected to the N Type field effect transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal to a gate, and a source is connected to an input terminal of the metal-insulator transition transistor (when using an NPN bipolar transistor), and a drain is connected to the metal- And a P-type field effect transistor coupled to the control terminal of the transition transistor.

In an embodiment of the present invention, the transistor receives the pulse input signal to a gate, a source connected to a control terminal of the metal-insulator transition transistor (when using a PNP bipolar transistor), a drain connected to ground Type field effect transistor.

In an embodiment of the present invention, the current supply supplies power derived from the secondary coil of the transformer to the control terminal of the metal-insulator transition transistor.

According to an embodiment of the present invention, the metal-insulator transition transistor may be formed by using a power supply including a transformer, a forward operation mode of a bipolar transistor, a reverse active mode, And the outlet terminal are doped with critical nc.

In practice, metal-insulator transition transistors are similar in structure to bipolar transistors as current control elements. However, general commercial bipolar transistors are not ideal metal-insulator transition devices due to insufficient doping in the metal-insulator transition. However, when a large current is applied, impurity charge is generated at the interface and negative differential A negative differential resistance (NDR) mode appears. Thus, in a broad sense, common commercial bipolar transistors can also be included in metal-insulator transition devices. The NDR phenomenon occurs in both the forward and reverse modes when the MIT critical current is applied to the bipolar transistor.

According to an embodiment of the present invention, the metal-insulator transition transistor may be operated in a negative differential resistance (NDR) mode. The NDR phenomenon is evidence of MIT as measured by a voltage drop caused by a decrease in resistance at a constant current, which appears in peak form in the data.

According to an embodiment of the present invention, the current supply and the metal-insulator transition transistor may be fabricated on one and the same substrate.

According to an embodiment of the present invention, the current supply and the metal-insulator transition transistor may be fabricated in one and the same package.

According to an embodiment of the present invention, the current supply and the metal-insulator transition transistor may be mounted on one and the same integrated circuit.

According to an embodiment of the present invention, the current supply may include at least one of a bipolar transistor, a field effect transistor, a transformer for generating an induced current, and an operational amplifier. Wherein the field effect transistor may comprise a junction field effect transistor and a morse field effect transistor.

The metal-insulator transition transistor system according to another embodiment of the present invention includes:

A metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition;

A pulse generator for generating a pulse-shaped signal; And

A threshold current for amplifying the signal and causing a metal-insulator transition (MIT) phenomenon to occur between the control terminal and the output terminal when the input terminal and the output terminal are connected between the voltage supply voltage and the ground voltage; Lt; / RTI >

A method of operating a metal-insulator transition transistor system, according to another embodiment of the present invention,

Connecting a metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition to an input and an output load;

Receiving an input signal; And

And generating a threshold current for causing a metal-insulator transition (MIT) phenomenon to occur between the control terminal and the output terminal using the input signal.

A method of operating a metal-insulator transition transistor system, according to another embodiment of the present invention,

Forming a metal-insulator transition transistor causing a metal-insulator transition using a bipolar transistor operating in a reverse active mode;

Connecting the metal-insulator transition transistor between a voltage supply voltage and a ground voltage;

Receiving an input pulse; And

And amplifying the input pulse to generate a threshold current for causing a metal-insulator transition (MIT) phenomenon to occur between the control terminal and the output terminal.

The metal-insulator transition transistor system according to another embodiment of the present invention includes:

A first metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition;

A second metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition;

A transformer coupled between the input terminal of the first metal-insulator transition transistor and the control terminal of the second metal-insulator transition transistor;

A pulse generator for generating a pulse-shaped signal; And

And an amplifier for amplifying the signal and applying the amplified signal to the control terminal of the first metal-insulator transition transistor.

As described above, according to the embodiment of the present invention, since the current supplier capable of supplying the critical current necessary for the MIT transistor to cause the MIT phenomenon is provided simply and efficiently, smooth operation of the MIT transistor becomes possible.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing definitions of symbols and terminals of an MIT transistor; FIG.
2 is a circuit diagram of a metal-insulator transition transistor system according to an embodiment of the present invention.
3 is a circuit diagram of a metal-insulator transition transistor system according to another embodiment of the present invention.
Fig. 4 is a two-terminal effect characteristic waveform diagram according to Fig. 2; Fig.
Fig. 5 is a three-terminal effect characteristic waveform diagram according to Fig. 2; Fig.
Fig. 6 is a characteristic waveform diagram according to Fig. 3; Fig.
7 is a circuit diagram of a metal-insulator transition transistor system according to another embodiment of the present invention.
8 is a characteristic waveform diagram according to Fig.
FIG. 9 is a circuit diagram of a metal-insulator transition transistor system according to a first modified embodiment of FIG. 3; FIG.
10 is a characteristic waveform diagram according to Fig.
11 is a circuit diagram of a metal-insulator transition transistor system according to a second modified embodiment of Fig.
12 is a characteristic waveform diagram according to Fig.
13 is a circuit diagram of a metal-insulator transition transistor system according to another embodiment of the present invention.
Fig. 14 is a characteristic waveform diagram showing the first and second scopes of Fig. 13; Fig.
Fig. 15 is a characteristic waveform diagram showing the third and fourth scopes of Fig. 13; Fig.
FIG. 16 is a characteristic waveform diagram of the first and second scopes when MITR1 and MITR2 in FIG. 13 are operated in a forward mode; FIG.
FIG. 17 is a characteristic waveform diagram that appears in the third and fourth scopes when MITR1 and MITR2 in FIG. 13 are operated in a forward mode; FIG.
Figure 18 is a circuit diagram of a metal-insulator transition transistor system according to an alternate embodiment of Figure 13;

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more apparent from the following description of preferred embodiments with reference to the attached drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, without intention other than to provide an understanding of the present invention.

In this specification, when it is mentioned that some element or lines are connected to a target element block, it also includes a direct connection as well as a meaning indirectly connected to the target element block via some other element.

In addition, the same or similar reference numerals shown in the drawings denote the same or similar components as possible. In some drawings, the connection relationship of elements and lines is shown for an effective explanation of the technical contents, and other elements or circuit blocks may be further provided.

Each of the embodiments described and exemplified herein may also include complementary embodiments thereof, and details of the basic operation and function of the MIT transistor, and details of the general operation, will be described in detail to avoid obscuring the gist of the present invention. Please note that it is not.

Figure 1 shows the definitions of the symbols and terminals of an MIT transistor.

Referring to Figure 1, a metal-insulator transition (hereinafter "MIT") transistor 10 is shown. These three-terminal devices are called t-switches or MIT transistors. The MIT transistor is abbreviated as MITR.

The MIT transistor 10 of FIG. 1 is different from a semiconductor transistor in that it has three terminals: an Inlet I, an Outlet O, and a control C. Here, the inlet serves as an input terminal, the outlet serves as an output terminal, and the control functions as a control terminal.

When a current flows to the C terminal of the MIT transistor 10, an MIT phenomenon occurs between the control terminal (C terminal) and the output terminal, and a large current generated by the MIT from the input terminal (I terminal) to the output terminal Flows.

The MIT transistor 10 exhibits a discontinuous jump phenomenon at the time of turn-on and switches between an insulator and a metal using an insulator (or semiconductor) -metal transition (MIT) phenomenon.

1x 10¹⁸ cm^-3 정도이다. n_c 정도의 정공을 포함하는 전류가 흘러야 한다. 이 정도의 전류는 반도체에서 흐를 수 있는 최대전류로서 임계전류 I_{Critical current} 라고 한다. 그러므로 MIT 트랜지스터(10)를 구동하기 위해서는 임계전류의 공급이 필수적이다.When the MIT phenomenon occurs between the control terminal and the output terminal of the MIT transistor 10, the amount of hole doping in the control layer should be about n _c 〓 (0.25 / a _o ) ³ . Where a _o means the radius of the bore of the hydrogen atom. Generally, n _c

1 x 10 ¹⁸ cm ^-3 . a current including holes of about n _c should flow. This amount of current is the maximum current that can flow in the semiconductor, and the critical current I _{Critical current} . Therefore, in order to drive the MIT transistor 10, it is necessary to supply a critical current.

In the embodiments of the present invention, the current supply for supplying the critical current is implemented as shown in Figs. 2, 3, 7, 9, 11, and 13. 2, an NPN bipolar transistor is implemented as a current supply, and in the case of FIG. 3, an N-type field effect transistor is implemented as a current supply.

2 is a circuit diagram of a metal-insulator transition transistor system according to an embodiment of the present invention.

2, a metal-insulator transition transistor system includes a metal-insulator transition transistor 10 and a metal-insulator transition (MIT) transistor 10 between the control terminal and the output terminal of the metal- And a current supplier 20 for supplying a threshold current for causing a phenomenon to occur.

Here, the current supply 20 is implemented as a bipolar transistor that receives a pulse input to generate the threshold current.

That is, the bipolar transistor receives the pulse input to the base (B), the collector (C) is connected to the input terminal (I) of the metal-insulator transition transistor and the emitter (E) And is connected to the control terminal (C) of the transistor.

The input terminal I of the MIT transistor 10 is connected to the voltage supply voltage Vcc through the first load connected between the nodes n1 and n2 and the output terminal O of the MIT transistor 10 is connected to And is connected to the ground voltage Vss through a second load connected between the nodes n3 and n4.

In the case of FIG. 2, a bipolar NPN transistor is used as a critical current supplying element in order to cause a metal-insulator transition between the control (C) terminal and the output (O) terminal of the MIT transistor 10, Effect transistors can be used.

The current supply 20 may also be implemented using an operational amplifier.

As a result, the MIT transistor 10 can be driven by a device for supplying a threshold current or any device.

In an embodiment of the present invention, the system means composed of two or more elements. For example, the system shown in FIG. 2 or 3 is called a system because it is composed of elements of two or more (critical current supplying element and MIT transistor).

In addition, the bipolar transistor or the field effect transistor, which is the current supply transistor, may be fabricated as a monolithic structure on one substrate together with the MIT transistor. Further, the two transistors shown in Fig. 2 may be fabricated in one package.

In addition, the current supply transistor and the MIT transistor may be included in an integrated circuit such as a conventional microprocessor, a memory, or a power device such as an IGBT.

3 is a circuit diagram of a metal-insulator transition transistor system according to another embodiment of the present invention.

In the case of FIG. 3, the current supply is implemented as a MOS FET (Field Effect Transistor), unlike FIG. In order to cause the MIT phenomenon to occur between the control terminal C and the output terminal O of the MIT transistor 10, an element for supplying a threshold current to the control terminal C of the MIT transistor 10, A transistor 22 is used.

4 is a 2-terminal effect characteristic waveform diagram according to Fig.

The measurement conditions in FIG. 4 are 500 KHz, V _control = 2 V, V _Inlet = 0 V, Load 1 = 0, and Load 2 = 1 W. Here, since V _Inlet = 0V, the system of FIG. 2 shows characteristics of a two-terminal MIT device. In the figure, the horizontal axis indicates time and the vertical axis indicates voltage output from the system.

FIG. 5 is a waveform diagram of a 3-terminal effect characteristic according to FIG. 2. FIG.

Similarly, in the figure, the horizontal axis indicates time and the vertical axis indicates the voltage output from the system.

When the NPN transistor 20 of FIG. 2 is used as the current supply for the critical current supply, an input pulse of 500 KHz is provided at the base of the NPN transistor 20. [ The measurement conditions were the same as in Example 1 except that the inlet voltage V _Inlet = 7 V 4.

5 shows the characteristics of the 3-terminal MIT transistor, it can be seen that the NPN transistor 20 is sufficient to serve as a current supply.

Referring to Figure 2 to describe in detail the operation again, so that to the MIT phenomenon between the control terminal and the output terminal in the MIT transistor 10 up to the reference Mott n _c 〓1x 10 ¹⁸ cm ^-3 in the hole of the threshold degree Current must flow from the control terminal to the output terminal. In order to achieve this, an NPN transistor 20 (2N3904) for supplying a critical current is connected as shown in FIG. 2, and a small current pulse signal is applied to the base terminal of the current supply transistor 20. A current larger than the applied current flows from the collector C to the emitter E by the amplifying action of the current supplying transistor 20 and is provided to the control terminal of the MIT transistor 10. [ As a result, an MIT occurs between the control terminal and the output terminal of the MIT transistor 10, and a large current flows from the input terminal to the output terminal. Here, the MIT transistor 10 is implemented by connecting a transistor such as 2N3904 in a reverse active mode. The reason why the transistor such as 2N3904 and the like is implemented by the MIT transistor 10 is that the operation according to the reverse mode connection of 2N3904 is the same as the operation of the MIT transistor 10.

The transistors used in FIG. 2 are 2N3904 transistors. One connected in Forward Active Mode for critical current supply and the other connected in Reverse Active Mode in order to function as an MIT transistor.

In order to observe the MIT phenomenon in the MIT transistor 10 in the system of FIG. 2, the measurement was performed under conditions of 500 KHz, V _control = 2 V, V _Inlet = 0 V, Load 1 = 0, and Load 2 = 1 W. Here, since the voltage was not applied to the input terminal, the system actually operated as a two-terminal MIT device. Figure 4 shows this. The upper part of the waveform of Fig. 4 is the signal measured at the control terminal. In this case, the magnitude of the signal peak appears to be about 1.5V. The bottom of the waveform is the signal measured at the output terminal. In this case, the magnitude of the signal peak is about 0.3V. The signal measured at the output terminal corresponds to the current since the resistance of the second load is 1 ohm.

The MIT phenomenon occurs at the sharp peak of the control signal, and the voltage drop soon occurs because the current is limited immediately after the MIT, resulting in a NDR (Negative Differential Resistance) phenomenon with reduced resistance. Peak and NDR events are evidence that MIT has occurred. When there is a peak, a small peak is also seen in the lower signal of Fig. The current at this time is about 0.3A, which is the MIT current.

If the inlet voltage V _Inlet = 7 V is applied under the above conditions, the system of Fig. 2 functions as a normal three-terminal element. That is, it operates as a normal MIT transistor. 5, the upper signal increased to 2V and the lower signal increased to 1V. The 1V of the lower signal corresponds to the current of 1A due to the resistance of 1 ohm (Load 2). Therefore, it can be seen that a large current is controlled by the pulse signal at the control terminal. Thus, as shown in FIG. 5, the experiment of FIG. 2 shows that the MIT transistor operates normally with the supply element for the critical current of the present invention operating well.

FIG. 6 is a characteristic waveform diagram according to FIG. 3. FIG.

In the figure, the horizontal axis represents time and the vertical axis represents the voltage output from the system of FIG.

The measurement result of FIG. 6 is obtained when a field effect transistor 22 such as IRF 640 is used as a current supply for supplying critical current as shown in FIG. 3, and a transistor such as 2N3904 is used as the MIT transistor 10.

In the case of FIG. 6, the measurement condition is that a pulse signal of 100 KHz 3 V is applied to the gate of IRF 640 and V _inlet = 7 V is applied. The measurement result proves that the supply transistor 22 is normally operated and the MIT transistor 10 is operating normally. When a field effect transistor is used as a current supply transistor, the current is wasted less than in a bipolar transistor. In the case of FIG. 3, the MIT transistor 10 is implemented by connecting the 2N3904 transistor in a reverse active mode structure.

7 is a circuit diagram of a metal-insulator transition transistor system according to another embodiment of the present invention.

In the case of FIG. 7, the MIT transistor 10 is implemented by connecting the PNP 2N3906 transistor in the reverse active mode structure, and the current supply 23 is implemented by connecting the PNP 2N3906 transistor in the forward active mode structure.

That is, 2N3906, which is a transistor for supplying a critical current, is connected in a forward direction like a normal transistor. In this case, the emitter of the transistor 23 for supplying the threshold current is connected to the control terminal of the MIT transistor 10. In FIG. 7, reference numeral 2 denotes a signal generator for generating an input pulse of 100 kHz, and reference numeral 4 denotes an oscilloscope or monitor for measuring a signal applied to a control terminal of the MIT transistor 10.

Fig. 8 is a characteristic waveform diagram according to Fig. 7. Fig.

Figure 8 is experimental data measured according to the system implementation of Figure 7; In the figure, the horizontal axis indicates time and the vertical axis indicates voltage output from the system.

The input from the function generator is 100KHz, 3V, Offset 1.5V, and the final 6V output. The input power of the input terminal is 4V. V _{control on the} left axis _input (V) is a signal measured at the control terminal of the MIT transistor 10. A peak in the signal means a negative differential resistance (NDR) phenomenon. This NDR is evidence of MIT when MIT happens. The right axis is the signal measured at the output terminal. In this case, the current flows about 0.3 A.

As can be seen from FIG. 8, the system of FIG. 7 serves as a circuit for generating the MIT phenomenon.

FIG. 9 is a circuit diagram of a metal-insulator transition transistor system according to the first modified embodiment of FIG. 3; FIG.

Referring to FIG. 9, the PNP 2N3906 transistor connected in the reverse active mode structure is used as the MIT transistor 10. Two N-type FETs (field effect transistors) are used as the current supply for the critical current supply. The system structure of FIG. 9 is similar to FIG. 3 except that the MIT transistor 10 is PNP 2N3906.

10 is a characteristic waveform diagram according to Fig.

In the figure, the horizontal axis indicates time and the vertical axis indicates voltage output from the system.

In Fig. 10, the left side shows the NDR signal of the peak as the input voltage of the control terminal. The right side shows the NDR peak signal as the output signal measured at the output terminal. A peak of 1 V indicates a current corresponding to 1A for a 1-ohm resistor.

11 is a circuit diagram of a metal-insulator transition transistor system according to a second modified embodiment of FIG.

Fig. 11 is the same as the system configuration of Fig. 3, except that the threshold current supply transistor 26 as the current supply is composed of a P-type FET (field effect transistor).

12 is a characteristic waveform diagram according to Fig.

In the figure, the horizontal axis indicates time and the vertical axis indicates voltage output from the system. When a P-type FET is used, an NDR peak is shown as in the other data in reference to FIG. In this case, since about 0.8 V is obtained at the output terminal, it can be seen that a current of 0.8 A flows through the 1-ohm resistor.

13 is a circuit diagram of a metal-insulator transition transistor system according to another embodiment of the present invention.

Referring to FIG. 13, a system employing a switching power supply as a current supply is shown. The switching power supply comprises an MIT transistor (MITR1: 10) and a switching transformer (6).

The MIT transistor (MITR1: 10) functions as a switching transistor TR.

An alternating current generated at the secondary coil side of the transformer 6 is applied to the control terminal of the MIT transistor 11. [

The switching speed of the MIT transistor (MITR1: 10) is 100 KHz. The high-frequency dynamic transformer (6) uses a capacity capable of flowing 1A at 10 V at 100 KHz. First, the switching operation of the MIT transistor MITR1: 10 is implemented by making a 100 KHz square wave through the function generator 1 and then supplying the amplified critical current to the control terminal through the amplifier 2. [ In this case the waveform was measured on oscilloscopes 1 and 2. The measurement results are shown in Fig. The peak measured in Oscilloscope 1 is experimental evidence that the MIT phenomenon (NDR) occurred. NDR stands for Negative Differential Resistance as a phenomenon of MIT. The amplifier 2 may be implemented as a noninverting operational amplifier and may have an amplification factor of about 100 times.

The current induced in the secondary coil of the transformer 6 corresponds to the magnitude of the threshold current for supplying the MIT transistor. The induced current is input to the control terminal of the MITR 2 (11). Experimental results according to the operation of the MITR 2 (11) are measured in oscilloscopes 3 and 4 as shown in FIG.

The peak (NDR phenomenon) as shown in Oscilloscopes 3 and 4 means that MIT has occurred (see FIG. 15). The current flowing to the output terminal of the MITR 2 (11) is about 300 mA. In this case, the resistance value of the resistor R1 is 1 ohm, and the data of the oscilloscope 4 is the connection point between the output terminal and the resistor R1. As can be seen from Figs. 14 and 15, the MIT threshold current can be sufficiently supplied in the power supply of Fig.

13, the output of the amplifier 2 appears through the oscilloscope 1 (the upper waveform in FIG. 14), and the transformer 6 and the MIT transistor MITR1 10 appear through the oscilloscope 2 (the lower waveform in Fig. 14). As shown in Oscilloscope 1, the peak seen at the input terminal of the MIT transistor 10 when the current supply is operated at 100 KHz is an indication that the MIT phenomenon occurred at MITR1 10.

15 is a characteristic waveform diagram showing the third and fourth scopes of Fig. As shown in the upper waveform of FIG. 15, the current induced in the secondary coil of the transformer 6 is shown through oscilloscope 3. The induced current is supplied as a threshold current to the control terminal of the MIT transistor 11 so that the MIT transistor 11 causes an MIT phenomenon. 15, the current obtained at the output terminal of the MIT transistor 11 is observed through the oscilloscope 4. In this case, The peak of the waveform measured through FIG. 15 is evidence that the MIT occurred in the MIT transistor 11.

14 and 15, the abscissa represents time, and the ordinate represents voltage output from the system.

FIG. 16 is a characteristic waveform diagram of the first and second scopes when MITR1 and MITR2 are operated in a forward mode in FIG. 13, and NDR peaks are observed through this.

FIG. 17 is a characteristic waveform diagram in the third and fourth scopes when MITR1 and 2 are operated in the forward mode in FIG. 13, and NDR peaks are observed. The results in Figures 16 and 17 are evidence that the metal-insulator transition transistor is also operated in the forward direction of the bipolar transistor.

Likewise, in the drawings of Figs. 16 and 17, the horizontal axis indicates time, and the vertical axis indicates a voltage output from the system.

Fig. 18 shows a modified embodiment of Fig. 13, in which the output terminal O of the MITR1 10 is connected to the primary coil of the transformer 6 in Fig. This can be more effective than the case of FIG. 13 because it can utilize the current flowing to the control terminal C of the MITR1 10 in FIG.

As described above, an optimal embodiment has been disclosed in the drawings and specification. Although specific terms have been employed herein, they are used for purposes of illustration only and are not intended to limit the scope of the invention as defined in the claims or the claims. Therefore, those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention.

For example, although the current supply has been described as a combination of a transistor, a transistor, and a transformer, the circuit configuration of the drawings may be changed or added without departing from the technical idea of the present invention, You can do it differently.

C: Control terminal (Control)
I: Input terminal (Inlet)
O: Output terminal (Outlet)
10: MIT transistor
20: Current supply

Claims (20)

Metal-insulator transition transistor; And
And a current supplier for supplying a critical current for causing a metal-insulator transition phenomenon to occur between a control terminal and an output terminal of the metal-insulator transition transistor,
Wherein the metal-insulator transition transistor is operated in a negative differential resistance (NDR) mode.
2. The metal-insulator transition transistor system of claim 1, wherein the current supply comprises a transistor that receives a pulse input signal to generate the threshold current.
3. The transistor of claim 2, wherein the transistor receives the pulse input signal to a base, a collector is coupled to an input terminal of the metal-insulator transition transistor, and an emitter is coupled to the control terminal of the metal- A metal-insulator transition transistor system comprising a bipolar transistor.
3. The transistor of claim 2, wherein the transistor receives the pulse input signal to a base, an emitter coupled to an input terminal of the metal-insulator transition transistor, and a collector coupled to the control terminal of the metal- A metal-insulator transition transistor system comprising a PNP transistor.
3. The method of claim 2, wherein the transistor is a metal-insulator transition comprising a PNP bipolar transistor having an emitter connected to a control terminal of the metal-insulator transition transistor and a collector connected to ground, Transistor system.
3. The method of claim 2, wherein the transistor is a metal-insulator transition comprising an NPN bipolar transistor connected to a control terminal of the metal-insulator transition transistor, the emitter of which is connected to ground, Transistor system.

3. The device of claim 2, wherein the transistor receives the pulse input signal to a gate, a drain is coupled to an input terminal of the metal-insulator transition transistor, and a source is coupled to the control terminal of the metal- A metal-insulator transition transistor system comprising a field effect transistor.
3. The device of claim 2, wherein the transistor is a metal-insulator transition transistor having an N-type field effect transistor coupled to a control terminal of the metal-insulator transition transistor, the drain of which receives the pulse input signal, Transition transistor system.
3. The transistor of claim 2, wherein the transistor receives the pulse input signal to a gate, a source coupled to an input terminal of the metal-insulator transition transistor, and a drain coupled to the control terminal of the metal- A metal-insulator transition transistor system comprising a field effect transistor.
3. The transistor of claim 2, wherein the transistor is a metal-insulator transition transistor having a P-type field effect transistor coupled to a control terminal of the metal-insulator transition transistor, the source of which is connected to the ground, Transition transistor system.
2. The metal-insulator transition transistor system of claim 1, wherein the current supply comprises supplying power derived from a secondary coil of a transformer to a control terminal of a metal-insulator transition transistor.
The method of claim 1, wherein the metal-insulator transition transistor is a metal element comprising a Forward Active Mode of a bipolar transistor operated in the negative differential resistance mode as a metal-insulator transition phenomenon when a supply of critical current is applied as a current device. - an insulator transition transistor system.
The metal-insulator transition transistor system of claim 1, wherein the metal-insulator transition transistor comprises a reverse active mode of a bipolar transistor operating in the negative differential resistance mode when a supply of critical current is applied as a current device.
delete 2. The metal-insulator transition transistor system of claim 1, wherein the current supply and the metal-insulator transition transistor are fabricated on one and the same substrate.
A metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition; And
And a control terminal connected between the input terminal and the control terminal of the metal-insulator transition transistor, for receiving an input signal when the input terminal and the output terminal are connected between a voltage supply voltage and a ground voltage, And a current supplier for generating a threshold current to cause the metal-insulator transition phenomenon to occur,
Wherein the metal-insulator transition transistor is operated in a negative differential resistance (NDR) mode.
delete delete A first metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition;
A second metal-insulator transition transistor having an input terminal, an output terminal, and a control terminal and causing a metal-insulator transition;
A transformer coupled between the first metal-insulator transition transistor and the second metal-insulator transition transistor;
A pulse generator for generating a pulse-shaped signal; And
And an amplifier for amplifying the signal and applying the amplified signal to the control terminal of the first metal-insulator transition transistor.
20. The method of claim 19,
A second metal-insulator transition transistor connected between an input terminal of the first metal-insulator transition transistor and a control terminal of the second metal-
And wherein the metal-insulator transition transistor system is connected between an output terminal of the first metal-insulator transition transistor and a control terminal of the second metal-insulator transition transistor.

Images