KR101779508B1 - A Processing Apparatus for Manufacturing Thin Film Solar Cell and Method for Thermal Processing using the same - Google Patents

Abstract

The present invention relates to a compound thin film solar cell manufacturing apparatus and a heat treatment process method using the same. The present invention relates to a method for preparing a quaternary compound compound absorption layer through a selenization and sulphiding heat treatment manufacturing system of a precursor composed of a metal / metal-compound material. The solar cell manufacturing apparatus of the present invention comprises a pressurizing chamber, a selenization and sulphiding heat treatment tray coupled to the inside of the sealed pressurizing chamber, and a substrate tray, and a heat transfer flank for heat transfer and compound crystal growth is disposed more efficiently. The tray efficiently supplies the chalcogen element efficiently, and the selenium / sulfur element ratio can be easily controlled. By heating the selenium and sulfur vapor and the inert gas in the chamber, it is possible to maximize the thin film crystal formation of the precursor during the heat treatment process have.

Description

[0001] The present invention relates to a thin film solar cell manufacturing apparatus and a heat treatment process method using the thin film solar cell,

The present invention relates to a compound thin film solar cell manufacturing apparatus and a heat treatment process method using the same. More specifically, the present invention relates to a method for preparing a quaternary compound-based absorption layer by a selenization and sulphidation heat-treatment system using a metal / metal-compound precursor. In addition, the present invention relates to an apparatus for producing a compound thin film solar cell having a quaternary system or more and a heat treatment process method, and more specifically to a CuZnSnS _X Se _(1-x) solar cell through a metal precursor.

CIGS is a chalcogenide compound semiconductor consisting of four elements of copper (Cu) - indium (In) - gallium (Ga) - selenium (Se). It has been actively studied for use as a solar cell absorbing layer. Since this material is a direct transition semiconductor compound, it has good solar energy conversion efficiency. By adding doping elements such as Al and S, it is possible to convert the energy gap to a wide band from 1.0 to 2.7 eV, It is known.

CIGS is a ternary semiconductor CuInSe2 (CIS) doped with gallium (Ga) element by In substitution to increase efficiency. The light absorption coefficient of this material is 105 cm ^-1, which is the highest among the light absorbing materials, and thus a high efficiency solar cell can be produced. In addition, the environmental stability and the resistance of the material to radiation are also very strong. It is possible to fabricate high-efficiency solar cells with a thickness of 1 ~ 2 μm, and has excellent electrical and optical stability over the long term, making it a very ideal thin film for the light absorption layer of solar cells. As a result, it has been actively researched as an economical and environment friendly low cost and high efficiency solar cell material of solar power generation in place of the expensive crystalline silicon solar cell currently used.

The fabrication of the solar cell structure using CIGS (CIS) as the light absorbing layer can be carried out by various deposition methods. Unlike the silicon type, it is possible to fabricate the solution system which does not use expensive equipments. .

The CIGS solar cell substrate is made of a glass substrate, and a ceramic substrate such as alumina or a metal substrate such as stainless steel is also used. The glass substrate is a Corning glass substrate, but it is expensive and difficult to use. There are other polyimide substrates, but they are difficult to use for CIGS thin film deposition process temperatures. In the case of using soda lime glass as a substrate, Na ions, which are impurities of glass, are diffused onto the Mo back electrode layer and diffused into the CIGS absorption layer. In this case, the crystallinity of the absorption layer is improved and the surface enhancement and hole density are increased. It is reported that the open-circuit voltage is increased and the efficiency characteristics are improved.

In the light absorption layer, CIS solar electricity research and development, which is the initial trivalent compound, was actively carried out. However, since the energy band gap is as low as 1 eV, high short-circuit current can be secured. Therefore, we tried to increase the efficiency by controlling the bandgap through the addition of materials. The material studied was CIGS, an empirical compound.

In CISe, the part of In was replaced with Ga to raise the bandgap to 1.5 eV, which is an appropriate level. In the study of adjusting the bandgap of CIGS compound by controlling Ga, the composition ratio of the absorption layer was optimized. Generally, when the energy bandgap of the light absorbing layer is large, the open-circuit voltage increases, but the short-circuit current decreases, and it is reported that the composition ratio control of each element plays a crucial role in the efficiency of the compound solar cell. In addition to the Ga addition, studies have been carried out to increase the open-circuit voltage by adding S, and relatively high efficiency has been reported.

As described above, the adjustment of the composition ratio of the absorbent layer is essential in the process and is very difficult. As a process for this, a vacuum evaporation process and a sputtering process are presently available, and a variety of composition ratios can be obtained by a solution process.

On the other hand, CIGS compound solar cells have disadvantages such as supply and demand of In and Ga materials and high cost of materials. In order to solve this problem, studies for manufacturing new solar cells by replacing In and Ga with Zn and Sn have been actively carried out . CZTS solar cells are regarded as eco - friendly absorbing layer materials because Zn and Sn are naturally very abundant in reserves, relatively low cost, and low harmfulness.

The study of CZTS thin film was started in 1988 at Shinshu University, Japan by using the atomic beam sputtering method and the optical band gap energy of 1.45 eV as the solar cell absorbing layer. In addition, CZTS thin films were fabricated on soda lime glass for the first time, and an absorption layer was formed through sulphide treatment to secure 0.66% efficiency of solar cell device fabrication. The short circuit current was 400 mV and the structure was CdS / ZnO: Al structure after forming CZTS on Mo back electrode.

Friedlmeier et al. Of the University of Stuttgart reported a 2.3% solar cell with a short-circuit current of 470 mV in 1997 using the co-deposition method. Researchers from Shinshu University, Shimada et al. Formed a precursor layer of Cu / Sn / ZnS and Cu / SnS / ZnS structures and sulfided using Ar and H ₂ S mixed gas. The solar cell efficiencies were 4.02% and 2.69% Respectively.

In the Nagano National College of Technology (NCT) research group in Japan, a sulfurization treatment technique using sulfurized powder in Cu / SnS / ZnS structure was applied to achieve a solar cell efficiency of 1.36%. The formation of CZTS thin films was similar to that of almost all groups, but the electrical, optical, and compositional ratios of the absorber layer were changed according to the sulphiding heat treatment technique. Thus, the efficiency of the solar cell was improved by this heat treatment technique. Secondary phases such as SnS, ZnS, Efficiency change studies are under way depending on the presence or absence.

Recently, CZTS thin film solar cells were fabricated by using simultaneous evaporation method in 2010. Simultaneous evaporation process was carried out at 550 ° C and then sulfidation was performed at partial pressure of 2 ~ 3 A polycrystalline CZTS thin film was fabricated at x 10 ^-3 Pa. In the process, the CZTS absorption layer was grown Cu-rich and the CuS formed by the KCN etching process was removed. The efficiency of this process was 4.1% and the open - circuit voltage of 541 mV was obtained. In addition, it is the same experiment. However, through the detailed analysis after the KCN treatment, the reinforcement of the recombination barrier according to the offset of the Cliff conduction layer between the CdS and the CZTS junction in the APL Journal in 2011 was reported.

Research on domestic research trends related to CZTS solar cells is underway at KAIST Department of Materials Engineering, and more than 4% efficiency characteristics have been reported in the solar energy materials & Solar cells journals. The CZTS absorption layer was formed by depositing a Cu / ZnSn / Cu precursor layer followed by heat treatment in a sulfurizing atmosphere. At this time, it was confirmed that the heat treatment process was formed as a single phase when the process was performed between 560 ° C and 580 ° C, and a CZTS thin film having a two-layer structure in which a layer having a large grain size was formed at 560 ° C, On the contrary, CZTS thin film of single structure was formed with large grain at 580 degrees. The solar cell efficiency of CZTS devices formed at 560 ° C was high and the device efficiency was 4.59% at 0.44 cm ² .

The preparation of CZTSe or CZTSSe has been reported to produce precursors of CZT and CZTS through a selenization heat treatment process. The CZTSe thin film through the selenization heat treatment process has an advantage of being excellent in solar cell characteristics due to high extinction coefficient.

However, since the crystal growth of the CZTS-based adsorption layer is influenced by the selenization heat treatment process variable "temperature, pressure, selenium partial pressure, heat transfer apparatus", optimization of the process parameters is essential for the production of the optimal absorption layer.

In addition, it is known that the composition ratio of Cu / (Zn + Sn) and Zn / Sn before and after the heat treatment is different due to the volatilization of Sn element after CZTS precursor and selenization and sulphiding heat treatment. to be.

It is necessary to use selenium and sulfur vaporized gas more efficiently in the selenization and sulphidation heat treatment process and it is determined whether the vaporized gas can be efficiently transferred to the precursor according to the internal structure of the heat treatment apparatus.

In addition, when an IR lamp such as a halogen lamp is used as a heat source, the precursor element may be evaporated when heat is directly transferred to the upper surface of the precursor substrate.

Also, the CIG and CZTS precursors using glass substrates are difficult to control the electrical properties of the absorber layer due to an increase in the amount of Na after the heat treatment when IR is injected on the back side where the precursor is not deposited.

Accordingly, the present invention aims at solving the above-mentioned problems by suggesting an improved device for producing selenization and sulphiding heat treatment.

Korean Patent No. 10-1227102

The present invention solves the above problems of the prior art and provides improved technologies that are currently required. The present invention enables the element volatilization control of the precursor and the vaporization gas control through the apparatus for producing selenization and sulfidation heat treatment, And an apparatus for manufacturing an improved heat treatment capable of manufacturing an efficient compound absorption layer of a substrate.

The apparatus for manufacturing a thin film solar cell according to the present invention comprises a heat source, a pressurizing chamber, and a chalcogen heat-treating internal device for selenization and sulphiding heat treatment combined inside a sealed pressurizing chamber.

In one embodiment of the present invention, the chalcogen heating internals comprise a lower tray; An upper tray capable of being seated in the lower tray, the upper tray having at least one substrate receiving recess formed thereon capable of receiving a substrate to be processed; And a flange disposed above the upper tray to seal the substrate receiving recess.

In one embodiment of the present invention, the lower tray includes a tray bottom and a tray wall extending upward from the bottom of the tray, wherein one or more voids are formed in the tray wall portion, So that fluid can communicate with the external environment of the tray.

In one embodiment of the present invention, the lower tray has a tray bottom and a tray wall extending upward from the tray bottom, the upper tray having a flange extending from the body, So that the bottom surface of the upper tray body is spaced from the bottom of the lower tray.

In one embodiment of the present invention, the substrate receiving concave portion of the upper tray has a substrate accommodating concave bottom and a substrate accommodating concave wall, and a space is formed in at least one of the substrate accommodating concave bottom and the substrate accommodating concave wall, And the substrate receiving recess are configured to be in fluid communication with each other by the at least one gap.

In an embodiment of the present invention, the concave portion of the upper tray has a concave bottom and a concave wall, and the thickness of the concave wall is configured to be larger than the thickness of the substrate to be processed.

In an embodiment of the present invention, the upper tray and the lower tray are hermetically coupled to each other, and the upper tray and the flange are hermetically coupled to each other.

In another embodiment of the present invention, the chalcogen heating internals comprise: a lower tray for receiving a chalcogen vapor source; An upper tray capable of being seated in the lower tray, the upper tray having at least one substrate receiving recess formed thereon for receiving a substrate on which the precursors are stacked; Wherein the chalcogen vapor source comprises at least one of sulfur (S), selenium (Se), and chalcogen compound (SeS ₂ ) And the precursor is at least one of copper (Cu), zinc (Zn), tin (Sn), gallium (Ga), and indium (In).

In yet another embodiment of the present invention, a method of heat treating a chalcogen using a chalcogen heat-treated internal device comprises the following steps.

 1) injecting a chalcogen vapor source for vaporization onto the lower tray;

 2) disposing the chalcogen heat treating internal device within the heat treatment chamber;

 3) continuously performing vacuum and atmospheric pressure before heating by the heat source;

 4) a heat treatment step for simultaneously performing the substrate heat transfer and the chalcogen vaporization by heating the chalcogen-heat-treated internal device by a heat source.

The chalcogen heat treating internal device according to the present invention improves the heat treatment process method to easily control the selenium / sulfide element ratio by efficiently supplying the chalcogen element.

The present invention provides an efficient heat treatment process by simultaneously providing heat transfer for precursor crystal growth and a heat source for vaporizing a chalcogen source. In addition, it suppresses the volatilization of the precursor element during the heat treatment process, and the selenium and sulfide gas are sealed to a certain amount at the upper end of the precursor, so that a uniform compound thin film can be manufactured.

Other features and advantages of the present invention will be readily apparent to those skilled in the art from the description herein.

1 is an exploded perspective view of a chalcogen-heat treated internal device in accordance with an embodiment of the present invention.
2 is an exploded perspective view of a calc-zoned heat-treated internal device in accordance with an embodiment of the present invention.
3 is a cross-sectional view taken along the line AA in Fig.
4 is a perspective view of a flank according to one embodiment of the present invention.
5 is a perspective view of a tray for a substrate holder according to an embodiment of the present invention.
6 is a perspective view of a chalcogen vaporization tray according to an embodiment of the present invention.

In the following, embodiments will be described in detail with reference to the accompanying drawings. Like reference symbols in the drawings denote like elements.

Various modifications may be made to the embodiments described below. It is to be understood that the embodiments described below are not intended to be limitations on the embodiments but include all modifications, equivalents, and alternatives to them.

The terms used in the examples are used only to illustrate specific embodiments and are not intended to limit the embodiments. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, the terms "comprises" or "having" and the like refer to the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this embodiment belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

In the following description of the present invention with reference to the accompanying drawings, the same components are denoted by the same reference numerals regardless of the reference numerals, and redundant explanations thereof will be omitted. In the following description of the embodiments, a detailed description of related arts will be omitted if it is determined that the gist of the embodiments may be unnecessarily blurred.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the present invention, the related art is intended to provide a person skilled in the semiconductor field with a sufficient understanding.

Regarding the production of the precursor used in the present invention, the same metal precursor as the patent " Thin film solar cell and its manufacturing method " (registration number: 1542343 (2015.07.31)) can be used, The heat treatment process can be performed through the precursor.

In one embodiment of the present invention, the metal precursor may include a Cu precursor, a Zn precursor, and a Sn precursor. The Cu precursor may include, but is not limited to, Cu, CuS, or CuSe. The Zn precursor may include, but is not limited to, Zn, ZnS, or ZnSe. In addition, the Sn precursor may include, but is not limited to, Sn, SnS, or SnSe.

Deposition of the metal precursor may be accomplished in a variety of ways. In one embodiment of the present invention, the deposition of the metal precursor may be performed by a vacuum process based sputtering process, an evaporation process, or a solution process based on a non-vacuum process, preferably by a sputtering process. In the case of depositing by a sputtering process, it is possible to manufacture a thin film solar cell with a large area and excellent reproducibility.

In one embodiment of the present invention, a sputtering process is used to deposit Cu / Zn / Sn, CuS / ZnS, CuSe / ZnS / Sn, Cu / ZnSe / ZnS / SnS, CuSe / ZnS / Sn, CuSe / ZnSe / Sn, Cu / Zn / SnS, Cu / Zn / SnSe, CuS / Zn / SnS, CuS / / SnSe, Cu / ZnSe / SnS, Cu / ZnSe / SnSe, CuS / ZnS / SnS, CuS / ZnS / SnSe, CuS / ZnSe / SnS or CuS / ZnSe / SnSe. In one embodiment of the present invention, the sputtering process is performed at a pressure of 4 to 7 mTorr, preferably 5 to 6 mTorr at room temperature, at a pressure of 10 to 30 sccm (Standard Cubic Centimeter per Minute), preferably 15 to 20 sccm Ar. ≪ / RTI >

In order to obtain a process in which vaporization is effectively performed, the chalcogen heat treatment through Se metal or the like is preferably performed by arranging a heat treatment internal device 100 in a closed type heat treatment chamber (not shown) made of a Qualz material, .

1 is an exploded perspective view of a chalcogen-annealed internal device 100 disposed within a hermetically sealed heat-treating chamber. The overall size of the chalcogenide heat-treated internal device 100 may vary depending on the chamber in which it is placed, and in the illustrated embodiment, a knife having a size capable of accommodating nine 25 x 25 mm soda- The Koza heat treating internal device 100 is shown.

Preferably, the chalcogen-heat-treated internal device 100 includes a chalcogen vaporization tray (or lower tray) 120, a tray (upper tray) 140 for the substrate holder, and a flank 160.

The chalcogen vaporization tray 120 is in the form of a substantially rectangular parallelepiped dish, preferably open at the top with four tray walls 124 and a tray bottom 126. The chalcogen vaporization tray 120 may include one or more (e.g., one or more) chalcogenide vapor deposition trays 120 on each of the walls so that a portion of the chalcogen vaporization gas vaporized from the chalcogen vaporization source 300 (see FIG. 3) And may have a cavity 122. The chalcogen vaporization gas is discharged from the chalcogen vaporization tray 120 through the gap 122 to the inside of the heat treatment chamber, thereby maintaining the vaporization gas uniformity in the chalcogen vaporization tray 120. The chalcogen vaporization tray 120 may be made of a material such as a quartz for easy washing after impregnation and prevention of inflow of impurities.

The substrate holder tray 140 is configured to have a size and shape that can be mounted in the chalcogen vaporization tray 120, and has a rectangular parallelepiped shape as a whole in the illustrated embodiment. 1, a flange 147 is provided on the upper portion so that the flange 147 overlaps the upper surface of the wall 124 of the chalcogen vaporization tray 120, so that the substrate holder tray 140 Can be kept apart from the upper surface of the tray bottom 126 of the chalcogen vaporization tray 120 (see FIG. 3).

On the upper surface of the tray 140 for substrate holder, a substrate receiving concave portion 146 for receiving a glass substrate having a precursor formed thereon is formed in the form of a concave portion. Preferably, these receiving recesses 146 are in the form of a rectangular parallelepiped. In the illustrated embodiment, a total of nine substrate receiving recesses 146 are formed to accommodate nine 25x25x3 (mm) substrates. However, the number of substrate receiving recesses 146 is not necessarily such a number, but may be different.

The substrate receiving recess 146 may have a receiving recess bottom 144 in which the glass substrate is disposed and a receiving recess wall 148 surrounding the glass substrate to be disposed. At least one of the receiving concave bottom 144 and the receiving concave wall 148 may be provided with a cavity 142 through which a chalcogen vaporizing gas to be vaporized from the chalcogen vaporizing tray 120 may be introduced . The illustrated embodiment discloses a configuration in which both the receiving recess bottom 144 and the receiving recess wall 148, i.e., one gap 142, is formed across the receiving recess bottom 144 and the receiving recess wall 148 have. There is no limitation on the number of voids formed in one substrate receiving recess 146, and an appropriate number of voids can be provided in consideration of process efficiency and the like. Preferably, as in the illustrated embodiment, a total of sixteen voids are disposed in one substrate receiving recess 146 at regular intervals. The diameter of each gap is preferably 0.1 to 0.5 mm.

The height of the receiving concave wall 142 is preferably such that the glass substrate 200 on which the precursor is formed is larger than the thickness of the substrate, and in the illustrated embodiment, the height of the glass substrate 200 is about 3 to 5 mm larger than the mounted substrate (see FIG. 3) . The height of the receiving concave wall 142 is made larger than the thickness of the substrate so that the chalcogen vaporized gas vaporized from the lower chalcogen vaporizing tray 120 is sealed in the substrate receiving concave portion 146 by a certain volume . The height ratio of the receiving recess wall 142 to the thickness of the substrate 200 can be designed so that the desired volume of chalcogen vapor may be sealed in the substrate receiving recess 146. [ Preferably, the optimization ratio is designed considering the internal volume of the heat treatment chamber and the like.

The substrate holder tray 140 may preferably be made of a graphite material.

The flank 160 is a plate-shaped member and has such a size as to seal all of the substrate receiving concave portions 146. In the illustrated embodiment, has a substantially rectangular shape conforming to the size and shape of the substrate holder tray 140.

When the glass substrate on which the precursor is formed is directly exposed to the IR heat source, there is a high possibility that the impurities on the soda lime substrate are diffused into the absorption layer. Particularly, the Na element can easily rise to the absorption layer and a large amount diffuses into the absorption layer to change the carrier concentration in the absorption layer. Such a diffusion action of the impurities has a disadvantage that the reproducibility of the production of the absorbing layer becomes difficult.

Thus, in the present invention, the flank 160 is disposed above the substrate holder tray 140 to prevent direct exposure of the substrate to an IR heat source (not shown) and to be indirectly heated.

On the other hand, in the CZTS thin film production through the selenization process, the selenium partial pressure affects the thin film characteristics. Therefore, by arranging the flank 160, the chalcogen vaporized gas vaporized from the chalogen vaporizing source 300 of the chalcogen vaporization tray 120 is vaporized on the substrate holder tray 140, except for the substrate on which the precursor is formed And can be kept constant in the volumetric region. This makes it possible to produce a uniform and reproducible thin film by keeping the gas partial pressure constant.

Tight coupling between the chalcogen vaporization tray 120 and the substrate hold tray 140 and between the substrate hold tray 140 and the flanks 160 can be accomplished through various known means, The description is omitted.

The CZTS thin film having a high quality crystal phase can be manufactured by performing the heat treatment process more efficiently and easily controlling the partial pressure of the chalcogen vaporized gas through the compound heat treatment process manufacturing apparatus according to the embodiment described above.

In addition, ZnS, SnS and Cu precursors were sequentially deposited by sputtering method, and then selenium - sulphide heat treatment was performed in the heat treatment apparatus proposed above to obtain characteristics of a CZTSSe thin film solar cell device of 9.3%. These results show the high efficiency characteristics of the CZTS solar cells produced by the sputter precursor method.

Meanwhile, the substrate heat transfer, the selenization and the sulphation can be performed at the same time through the calcination heat treatment apparatus according to the present invention. The source of the vaporization is performed after injecting the Se metal and the SeS ₂ powder source into the lower vaporization tray . Instead of SeS ₂ powder sources, S or S compounds can be used.

The simultaneous selenization and sulphidation heat treatment process is performed by disposing a calcination heat internal device 100 including the above-described chalcogen vaporization tray 120, the substrate holder tray 140, and the flank 160 in the heat treatment chamber Then, the inside of the chamber is evacuated to prevent contamination in the thin film. When the pressure inside the chamber becomes 10 ^-2 mTorr or less, the vacuum process is stopped and inert gas Ar is injected to reach the internal pressure to the atmospheric pressure. Then, the heat treatment process is performed through the IR heat source. At this time, the heat treatment chamber should be designed to withstand the internal volume expansion due to the temperature rise and the pressure due to the chalcogen evaporation.

An important advantage of the above-described compound heat treatment process apparatus is that the composition ratio of the precursor does not differ from the composition ratio after the heat treatment. As a result of the actual ICP test, the composition ratios after the heat treatment were Cu / (Zn + Sn) = 0.86 and Zn / Sn = 1.07 when the composition ratio of the precursor was Cu / (Zn + Sn) = 0.86 and Zn / Sn = 1.08, This means that there is no. It is possible to more easily control the composition ratio of the chalcogen compound after the heat treatment by determining the composition ratio of the precursor to the final absorption layer.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

100: Karl Kozen heat treatment internal device
120: Calcogen vaporization tray
122: Lower tray gap
124: Lower tray wall
126: bottom tray bottom
142: Upper tray clearance
144: Top tray bottom
146: substrate receiving recess
148: upper tray wall
140: Tray for substrate holder
160: Flank
200: substrate on which a conductor is formed
300: Karl Rosen vapor source

Claims (13)

Lower tray;
An upper tray capable of being seated in the lower tray, the upper tray having at least one substrate receiving recess formed thereon capable of receiving a substrate to be processed;
And a flange disposed at an upper portion of the upper tray to seal the substrate receiving recessed portion;
Wherein the lower tray has a tray bottom and a tray wall extending upwardly from the bottom of the tray, wherein at least one cavity is formed in the tray wall, the interior of the lower tray is connected to the tray outer environment And a fluid connection member
Wherein the substrate receiving recess of the upper tray has a substrate receiving recess bottom and a substrate receiving recess wall, the thickness of the recess wall being greater than the thickness of the substrate to be processed, Wherein the lower tray and the substrate receiving recess are connected in fluid communication with each other by the at least one gap.
The internal device of calc - zeon heat treatment of thin film solar cell manufacturing equipment. delete The method according to claim 1,
The lower tray having a tray bottom and a tray wall extending upwardly from the tray bottom,
The upper tray having a flange portion extending from the body,
Wherein the bottom portion of the upper tray body is spaced from the bottom of the lower tray by the flange portion being supported at the upper end of the tray wall,
The internal device of calc - zeon heat treatment of thin film solar cell manufacturing equipment. delete delete The method according to claim 1,
The upper tray and the lower tray are tightly coupled with each other,
Wherein the upper tray and the flange are tightly coupled with each other,
The internal device of calc - zeon heat treatment of thin film solar cell manufacturing equipment. A lower tray for receiving a chalcogen vapor source;
An upper tray capable of being seated in the lower tray, the upper tray having at least one substrate receiving recess formed thereon for receiving a substrate on which the precursors are stacked;
And a flange disposed at an upper portion of the upper tray to seal the substrate receiving concave portion;
Wherein the chalcogen vapor source comprises at least one of sulfur (S), selenium (Se) and chalcogen compound (SeS2)
The precursor includes at least one of copper (Cu), zinc (Zn), tin (Sn), gallium (Ga), and indium (In)
At this time, the lower tray has a tray bottom and a tray wall extending upward from the bottom of the tray, a gap is formed in the tray wall, and the inside of the lower tray communicates with the external environment of the tray through the gap ≪ / RTI >
Wherein the substrate receiving recess of the upper tray has a substrate receiving recess bottom and a substrate receiving recess wall, the thickness of the recess wall being greater than the thickness of the substrate to be processed, Wherein the lower tray and the substrate receiving recess are connected in fluid communication with each other by the at least one gap.
The internal device of calc - zeon heat treatment of thin film solar cell manufacturing equipment. delete 8. The method of claim 7,
The lower tray having a tray bottom and a tray wall extending upwardly from the tray bottom,
The upper tray having a flange portion extending from the body,
Wherein the bottom portion of the upper tray body is spaced from the bottom of the lower tray by the flange portion being supported at the upper end of the tray wall,
The internal device of calc - zeon heat treatment of thin film solar cell manufacturing equipment. delete delete 8. The method of claim 7,
The upper tray and the lower tray are tightly coupled with each other,
Wherein the upper tray and the flange are tightly coupled with each other,
The internal device of calc - zeon heat treatment of thin film solar cell manufacturing equipment. A method of heat treating a chalcogen using a calc-zoned heat-treated internal device according to claim 1 or 7,
1) injecting a chalcogen vapor source for vaporization onto the lower tray;
2) disposing the chalcogen heat treating internal device within the heat treatment chamber;
3) continuously performing vacuum and atmospheric pressure before heating by the heat source;
4) a heat treatment step for simultaneously heating the chalcogen-heat-treated internal device by a heat source to perform substrate heat transfer and chalcogen vaporization;
/ RTI >

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