KR101776023B1 - Method and apparatus for treating a substrate - Google Patents

Method and apparatus for treating a substrate Download PDF

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Publication number
KR101776023B1
KR101776023B1 KR1020150161925A KR20150161925A KR101776023B1 KR 101776023 B1 KR101776023 B1 KR 101776023B1 KR 1020150161925 A KR1020150161925 A KR 1020150161925A KR 20150161925 A KR20150161925 A KR 20150161925A KR 101776023 B1 KR101776023 B1 KR 101776023B1
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KR
South Korea
Prior art keywords
substrate
liquid
supplying
processing
cleaning
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KR1020150161925A
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Korean (ko)
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KR20170020192A (en
Inventor
이복규
이재명
박선용
윤준희
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세메스 주식회사
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Publication of KR20170020192A publication Critical patent/KR20170020192A/en
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Publication of KR101776023B1 publication Critical patent/KR101776023B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H01L51/0025—

Abstract

The present invention relates to a method of processing a substrate and an apparatus for processing the substrate. A substrate processing method according to an embodiment of the present invention is a substrate processing method including a process liquid supply step of supplying a process liquid containing ozone water to a substrate and an organic solvent supply step of supplying isopropyl alcohol to the substrate .

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing method,

The present invention relates to a method of processing a substrate and an apparatus for processing the substrate.

To fabricate semiconductor devices or liquid crystal displays, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed on the substrate. Among them, the etching process is a process for removing an unnecessary region from a thin film formed on a substrate, and a high selection ratio and a high etching rate are required for the thin film.

In general, the etching process or the cleaning process of the substrate is largely carried out in a chemical treatment stage, a rinsing treatment stage, and a drying treatment stage. In the chemical treatment step, a chemical for etching the thin film formed on the substrate or removing foreign substances on the substrate is supplied to the substrate, and in the rinsing step, a rinsing liquid such as pure water is supplied onto the substrate.

On the other hand, a high-temperature chemical liquid is used in the process of washing the organic material. The high temperature chemical solution is a mixture of sulfuric acid and hydrogen peroxide. In this case, a reaction heat is generated in the course of the reaction of the organic substance with the chemical solution and the substrate, thereby damaging the pattern formed on the substrate by heat. In addition, when the size of the pattern is 26 nm or less, it is difficult to remove fine particles. In addition, when the amount of sulfuric acid or fruit juice is increased, the amount of the rinsing liquid used to remove the rinsing liquid increases, which increases the treatment cost and causes environmental pollution in the process of discarding the used treatment liquid. In addition, at a high temperature, the chemical process is performed by heating the chemical using electric energy. In order to perform such a process, the use of electric energy is increased. In addition, the parts used in the process are damaged by the acid gas generated during the process, and the maintenance cost is large.

On the other hand, in the substrate cleaning process, a chemical process, a rinsing process, and a process of replacing the rinsing liquid with pure water were performed. During the pure process, the substrate was rotated to remove pure water from the substrate. However, such a process has a problem that the pattern of the substrate is made finer, the depth of the pattern is deepened, and removal of pure water having a high surface tension is difficult. In order to solve these problems, substitution process was performed using isopropyl alcohol with low surface tension instead of pure water process, and then substrate was dried by using dry gas.

However, when sulfuric acid is used in the chemical used in the process of removing organic substances on the substrate, the reactivity between sulfuric acid and isopropyl alcohol is high, so that the use of isopropyl alcohol is inadequate and the efficiency of the substrate drying process is reduced.

The present invention is to provide a substrate processing method and a substrate processing apparatus for processing a substrate by supplying a process liquid containing ozone water.

The present invention also relates to a substrate processing method and a substrate processing apparatus which can use isopropyl alcohol in a drying process in an organic material cleaning process such as a photoresist.

The present invention is not limited thereto, and other objects not mentioned may be clearly understood by those skilled in the art from the following description.

The present invention provides a method of treating a substrate.

According to an embodiment of the present invention, the substrate processing method may include a process liquid supply step of supplying a process liquid containing ozone water to the substrate, and thereafter an organic solvent supply step of supplying isopropyl alcohol to the substrate have.

According to one embodiment, the isopropyl alcohol may be supplied in a liquid phase.

According to an embodiment, the substrate processing method may further include a chemical supplying step of supplying a chemical to the substrate before the process liquid supplying step.

According to one embodiment, the substrate processing method may further include a chemical supplying step of supplying a chemical to the substrate between the treating liquid supplying step and the organic solvent supplying step.

According to an embodiment, the substrate processing method may further include a cleaning step of supplying a cleaning liquid in a mist form to the substrate between the processing liquid supply step and the organic solvent supply step.

According to an embodiment of the present invention, the substrate processing method includes supplying a chemical to the substrate before the process liquid supply step, supplying the cleaning liquid to the substrate in a mist form between the process liquid supply step and the organic solvent supply step The cleaning step may be performed.

According to an embodiment of the present invention, the substrate processing method further includes a chemical supplying step of supplying a chemical to the substrate between the treating liquid supplying step and the organic solvent supplying step, and a cleaning step of supplying the cleaning liquid to the substrate in a mist form can do.

According to one embodiment, the substrate processing method further includes: a first chemical supply step of supplying a first chemical to the substrate before the supply of the process liquid; and a second chemical supply step of supplying a second chemical to the substrate between the process liquid supply step and the organic solvent supply step. A second chemical supplying step of supplying the chemical, and a cleaning step of supplying the cleaning liquid to the substrate in a mist form.

According to an embodiment, the substrate processing method further includes a prerining step of supplying a rinsing liquid to the substrate, and the prerining step may be performed first.

According to one embodiment, the treatment liquid may be provided as a mixture of ozone water and pure water.

According to one embodiment, the treatment liquid may be provided as a mixture of ozone water and a chemical liquid.

According to one embodiment, the chemical liquid may be provided with hydrofluoric acid or ammonia water.

According to one embodiment, the amount of dissolved ozone in the treatment liquid may be 80 ppm or more.

According to one embodiment, the treatment liquid can remove the organic film formed on the substrate.

According to one embodiment, the treatment liquid can remove the photoresist formed on the substrate.

According to one embodiment, the chemical may be provided by any one of hydrogen peroxide, ammonia water and a mixture of water, hydrofluoric acid or ammonia water.

According to one embodiment, the cleaning liquid may be provided as a mixture of hydrogen peroxide, ammonia water, and water or pure water.

According to one embodiment, the processing liquid can be supplied at a position adjacent to the center of the substrate in the central region of the substrate.

According to one embodiment, the process liquid supply step includes a first process liquid supply step of supplying the process liquid while rotating the substrate at a first process speed, and a second process liquid supply step of supplying the substrate at a second process speed different from the second process speed And a second process liquid supply step of supplying the process liquid while rotating the first process liquid, wherein the first process speed may be slower than the second process speed.

According to one embodiment, the substrate has an upper film and a lower film, the upper film is provided as an oxide film, the lower film is provided as a film containing silicon or poly series, and a fluoric acid is supplied to the chemical supplying step, And supplying the treatment liquid includes supplying a treatment liquid containing a mixed solution of hydrogen peroxide, ammonia water, and water, hydrogen peroxide or ozone water to the substrate, and supplying a treatment liquid containing a mixed solution of ozone water and ammonia water to the substrate And a process liquid supply step.

According to one embodiment, the substrate has an upper film and a lower film, the upper film is provided as an oxide film, and the lower film is provided as an oxide film, a nitride film, or a metal film, and the first chemical supplying step supplies hydrofluoric acid The oxide film is removed, and the substrate can be treated by supplying any one of ozone water, a mixed solution of ozone water and hydrofluoric acid, or a mixed solution of ozone water and ammonia water.

According to an embodiment, the concentration of the ozonated water contained in the treatment liquid may be either a mixing line for mixing the treatment liquid, a circulation line for circulating the treatment liquid to the substrate and circulating the treatment liquid, and a discharge line for discharging the treatment liquid It can be measured in plural.

According to an embodiment, when the concentration of the ozone water is out of the set concentration, the process can be stopped and pure water can be supplied to the substrate.

According to an embodiment of the present invention, the concentration of ozone gas may be measured in a processing space for processing the substrate, and the ozone gas may be exhausted to the outside of the processing space when the concentration is more than a preset concentration.

According to another embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: a process liquid supply step of supplying a process liquid containing ozone water to a substrate; a rinse supply step of supplying a rinse liquid to the substrate; And an organic solvent supplying step for supplying the organic solvent.

According to one embodiment, the isopropyl alcohol may be supplied in a liquid phase.

According to one embodiment, the amount of dissolved ozone in the treatment liquid may be 80 ppm or more.

According to one embodiment, the treatment liquid can remove the organic film formed on the substrate.

According to one embodiment, the treatment liquid can remove the photoresist formed on the substrate.

According to one embodiment, the rinsing liquid may be a liquid in which carbon dioxide is dissolved in pure water.

According to one embodiment, the rinsing liquid may be supplied simultaneously to the center of the substrate and a point between the center of the substrate and the end of the substrate.

According to an embodiment of the present invention, the rinsing step may include a first rinsing step of rotating the substrate at a first rinsing speed and supplying the rinsing liquid, and a second rinsing step of supplying the substrate after the first rinsing step, And a second rinse supplying step of supplying the rinse liquid while rotating the first rinse liquid at a second rinse rate.

According to an embodiment, the first rinse rate may be faster than the second rinse rate.

According to one embodiment, the process liquid supply step rotates the substrate at a processing speed and supplies the processing liquid, and the processing speed may be slower than the first rinse rate and faster than the second rinse rate.

According to one embodiment, the substrate processing method further includes a chemical supplying step of supplying a chemical to the substrate before the organic solvent supplying step, and a cleaning step of supplying a cleaning liquid to the substrate after the cleaning step, The flow rate of the cleaning liquid supplied to the substrate in the form of mist and discharged toward the substrate when the cleaning liquid is supplied may be 20 to 60 m / s.

According to one embodiment, the cleaning step may supply the cleaning liquid to the cleaning area of the substrate, and the cleaning area may be between a point spaced a predetermined distance from the end of the substrate at the center of the substrate.

According to one embodiment, the predetermined distance may be 1 mm or less.

According to an embodiment of the present invention, the organic solvent supply step supplies the organic solvent to the substrate rotated at a first drying rate, wherein the organic solvent has a point spaced a certain distance from the center of the substrate and the end of the substrate, And a second organic solvent supplying step of supplying the organic solvent to the center of the substrate rotated at the second drying speed.

According to one embodiment, the first drying speed and the second drying speed may be the same speed.

According to an embodiment of the present invention, the organic solvent supply step may further include a third organic solvent supply step of supplying the organic solvent to the center of the substrate rotated at the third drying rate after the second organic solvent supply step, The third drying rate may be faster than the second drying rate.

According to an embodiment of the present invention, the substrate processing method further includes a drying step of supplying a drying gas to the substrate after the organic solvent supplying step to dry the substrate, wherein the drying step includes: The fourth drying speed may be the same as the third drying speed, and the third drying speed may be higher than the second drying speed.

According to an embodiment, the drying gas can supply the drying gas while repeatedly moving the central region of the substrate.

The present invention provides an apparatus for processing a substrate.

According to one embodiment of the present invention, the substrate processing apparatus includes a support unit for supporting a substrate, a processing solution supply nozzle for supplying a processing solution containing ozone water to the substrate placed on the support unit, and a substrate placed on the support unit And an organic solvent supply nozzle supplying isopropyl alcohol.

According to one embodiment, the substrate processing apparatus further includes a controller for controlling the process liquid supply nozzle and the organic solvent supply nozzle, respectively, and the controller controls the process to supply the process liquid to the substrate and then supply the isopropyl alcohol The liquid supply nozzle and the organic solvent supply nozzle can be controlled.

According to an embodiment of the present invention, the substrate processing apparatus further includes a pure water nozzle for supplying pure water to the substrate, wherein the pure water nozzle includes a first pure water nozzle for supplying pure water to the center of the substrate, And a second pure water nozzle supplying pure water to a point between the end portions.

According to an embodiment of the present invention, the substrate processing apparatus further includes a cleaning nozzle for cleaning the substrate, the cleaning nozzle including a body having a passage through which a cleaning liquid flows and a plurality of discharge ports connected to the passage, and a cleaning liquid flowing through the passage, And a vibrator that pressurizes and discharges the cleaning liquid to the outside through the discharge port.

According to one embodiment, the substrate processing apparatus further includes a cleaning nozzle for cleaning the substrate, wherein the cleaning nozzle has a cleaning liquid flow path through which a cleaning liquid flows and a gas flow path through which gas is jetted toward the cleaning liquid discharged from the cleaning liquid flow path And the cleaning liquid may be sprayed by the gas.

According to an embodiment, the substrate processing apparatus further includes a cleaning nozzle for cleaning the substrate, the cleaning nozzle including a first cleaning nozzle for supplying a cleaning liquid to the substrate, and an ultrasonic nozzle for applying ultrasonic waves to the cleaning liquid on the substrate .

According to one embodiment, the substrate processing apparatus may further include a processing liquid supply unit that mixes the ozone water and the chemical liquid with the processing liquid supply nozzle to supply the processing liquid.

According to one embodiment, the treatment liquid supply unit includes an ozone water supply member for supplying the ozone water, a chemical liquid supply member for supplying the chemical liquid, a mixing line connected to the ozone water supply member and the chemical liquid supply member, And a connection line connecting the circulation line and the process liquid supply nozzle.

According to one embodiment, the substrate processing apparatus further includes a treatment liquid supply unit that mixes the ozone water and pure water with the treatment liquid supply nozzle to supply the treatment liquid, and the treatment liquid supply unit includes an ozone water supply unit A mixing line connected to the supply member, a pure water supply member for supplying the pure water, the ozone water supply member and the pure water supply member, a circulation line connected to the mixing line and circulating the treatment liquid, And a connection line connecting the liquid supply nozzle.

According to one embodiment, the treatment liquid supply unit includes a discharge line branched from the circulation line and discharging the treatment liquid circulating through the circulation line, and a neutralization unit disposed on the discharge line for neutralizing ozone contained in the treatment liquid, Member. ≪ / RTI >

According to one embodiment, the treatment liquid supply unit may further include a sensing member installed in the circulation line or the discharge line for sensing the concentration of ozone in the treatment liquid.

According to one embodiment, the substrate processing apparatus has a chamber having an inner space, the support unit being located in the inner space, and a chamber located inside the chamber, the concentration of ozone gas generated when the processing liquid is supplied to the substrate, And may further include a measuring member for measuring.

According to one embodiment, the amount of dissolved ozone in the treatment liquid may be 80 ppm or more.

According to an embodiment of the present invention, efficiency of a substrate processing process can be improved by supplying a processing solution containing ozone water and an organic solvent to the substrate.

According to an embodiment of the present invention, the efficiency of a substrate processing process can be improved by selectively using a chemical and a treatment liquid depending on the type of the film formed on the substrate.

The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and attached drawings.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a plan view showing a substrate processing apparatus provided in the process chamber of FIG.
3 is a cross-sectional view showing a substrate processing apparatus provided in the process chamber of FIG.
4 is a view showing a cleaning nozzle according to an embodiment of the present invention.
5 to 7 are views showing a cleaning nozzle according to another embodiment of the present invention.
8 is a view showing a process liquid supply unit according to an embodiment of the present invention.
9 is a flowchart sequentially showing a substrate processing method according to an embodiment of the present invention.
10 is a flowchart showing a process liquid supply step according to an embodiment of the present invention.
11 is a schematic view showing that a process liquid according to an embodiment of the present invention is supplied to a substrate.
12 is a view schematically showing a position where a processing liquid is supplied to a substrate.
13 and 14 are views showing the rotational speed of the substrate in accordance with the process liquid supply step.
15 and 16 are sectional views showing a film formed on a substrate.
17 is a flowchart sequentially showing a substrate processing method according to another embodiment of the present invention.
FIG. 18 is a flowchart sequentially showing the rinsing step of FIG.
19 is a flowchart sequentially showing the organic solvent supply step of FIG.
20 is a view showing a state in which the rinse liquid is supplied to the substrate.
FIGS. 21 and 22 are views showing the rotational speed of the substrate in accordance with the rinsing step.
23 is a view showing a cleaning area on a substrate according to an embodiment of the present invention.
24 to 27 are diagrams schematically showing an organic solvent supply step.
FIGS. 28 and 29 are views showing a state where dry gas is supplied to the substrate in the drying step. FIG.
30 is a graph showing the port resist removal ratio according to the amount of dissolved ozone contained in the treatment liquid.
31 is a graph showing the kind of a treatment liquid for treating a substrate and the amount of particle generation according to the process.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus 1 includes an index module 10 and a processing module 20. The index module 10 has a load port 11 and a transfer frame 14. The load port 11, the transfer frame 14, and the process module 20 are sequentially arranged in a line. Hereinafter, the direction in which the load port 11, the transfer frame 14, and the processing module 20 are arranged is referred to as a first direction 2. A direction perpendicular to the first direction 2 is referred to as a second direction 3 and a direction perpendicular to the plane including the first direction 2 and the second direction 3 is referred to as a third direction (4).

The carrier 13 in which the substrate W is housed is seated in the load port 11. [ A plurality of load ports 11 are provided and they are arranged in a line along the second direction 3. In FIG. 1, four load ports 11 are shown. However, the number of the load ports 11 may increase or decrease depending on conditions such as the process efficiency and the footprint of the process module 20. A carrier (13) is provided with a slot (not shown) provided to support the edge of the substrate (W). The slots are provided in a plurality of third directions (4), and the substrates (W) are placed in the carrier (13) so as to be stacked on each other along the third direction (4). As the carrier 13, a front opening unified pod (FOUP) may be used.

The process module 20 has a buffer unit 22, a transfer chamber 25, and a process chamber 26. The transfer chamber 25 is arranged so that its longitudinal direction is parallel to the first direction 2. Process chambers 26 are disposed on one side and the other side of the transfer chamber 25 along the second direction 3, respectively. The process chambers 26 located on one side of the transfer chamber 25 and the process chambers 26 on the other side of the transfer chamber 25 are provided to be symmetrical with respect to the transfer chamber 25. Some of the process chambers 26 are disposed along the longitudinal direction of the transfer chamber 25. In addition, some of the process chambers 26 are stacked together. That is, at one side of the transfer chamber 25, the process chambers 26 may be arranged in an array of A X B (where A and B are each a natural number of one or more). Where A is the number of process chambers 26 provided in a row along the first direction 2 and B is the number of process chambers 26 provided in a row along the third direction 4. When four or six process chambers 260 are provided on one side of the transfer chamber 25, the process chambers 26 may be arranged in an array of 2 X 2 or 3 X 2. The number of process chambers 26 may increase or decrease. Unlike the above, the process chamber 26 may be provided only on one side of the transfer chamber 25. Also, unlike the above, the process chamber 26 may be provided as a single layer on one side and on both sides of the transfer chamber 25.

The buffer unit 22 is disposed between the transfer frame 14 and the transfer chamber 25. The buffer unit 220 provides a space in which the substrate W remains before the transfer of the substrate W between the transfer chamber 25 and the transfer frame 14. [ The buffer unit 22 is provided with a slot (not shown) in which the substrate W is placed, and a plurality of slots (not shown) are provided so as to be spaced apart from each other in the third direction 4. The surface of the buffer unit 22 facing the transfer frame 14 and the surface facing the transfer chamber 25 are opened.

The transfer frame 14 carries the substrate W between the carrier 13 and the buffer unit 22 which are seated on the load port 11. The transfer frame 14 is provided with an index rail 17 and an index robot 16. The index rail 17 is provided so that its longitudinal direction is parallel to the second direction 3. The index robot 16 is installed on the index rail 17 and is linearly moved along the index rail 17 in the second direction 3. [ The index robot 16 has a base 16a, a body 16b, and an index arm 16c. The base (16a) is installed so as to be movable along the index rail (17). The body 16b is coupled to the base 16a. The body 16b is provided to be movable along the third direction 4 on the base 16a. In addition, the body 16b is provided so as to be rotatable on the base 16a. The index arm 16c is coupled to the body 16b and is provided to be movable forward and backward relative to the body 16b. A plurality of index arms 16c are provided and each is provided to be individually driven. The index arms 16c are stacked in a state of being spaced apart from each other along the third direction 4. [ Some of the index arms 16c are used to transfer the substrate W from the processing module 20 to the carrier 13 while the other part is used to transfer the substrate W from the carrier 13 to the processing module 20. [ As shown in Fig. This can prevent particles generated from the substrate W before the processing process from adhering to the substrate W after the processing in the process of loading and unloading the substrate W by the index robot 16.

The transfer chamber 25 carries the substrate W between the buffer unit 22 and the process chamber 26 and between the process chambers 26. The transfer chamber (25) is provided with a guide rail (29) and a main robot (24). The guide rails 29 are arranged such that the longitudinal direction thereof is parallel to the first direction 2. The main robot 24 is installed on the guide rails 29 and is linearly moved along the first direction 2 on the guide rails 29. The main robot 24 has a base 24a, a body 24b, and a main arm 24c. The base 24a is installed so as to be movable along the guide rail 29. The body 24b is coupled to the base 24a. The body 24b is provided to be movable along the third direction 4 on the base 24a. Also, the body 24b is provided so as to be rotatable on the base 24a. The main arm 24c is coupled to the body 24b, which is provided to be movable forward and backward relative to the body 24b. A plurality of main arms 24c are provided and each is provided to be individually driven. The main arms 24c are stacked in a state of being spaced from each other along the third direction 4. The main arm 24c used when the substrate W is transferred from the buffer unit 22 to the process chamber 26 and the main arm 24c used when the substrate W is transferred from the process chamber 26 to the buffer unit 22 The main arms 24c may be different from each other.

In the process chamber 26, a substrate processing apparatus 300 for performing a cleaning process on the substrate W is provided. The substrate processing apparatus 30 provided in each of the process chambers 26 may have a different structure depending on the type of the cleaning process to be performed. Alternatively, the substrate processing apparatus 30 in each process chamber 26 may have the same structure. Optionally, the process chambers 26 are divided into a plurality of groups so that the substrate processing apparatuses 30 provided in the process chambers 26 belonging to the same group have the same structure and are provided in the process chambers 26 belonging to different groups The substrate processing apparatuses 30 may have different structures from each other. For example, if the process chambers 26 are divided into two groups, a first group of process chambers 26 is provided on one side of the transfer chamber 25 and a second group of process chambers 26 is provided on the other side of the transfer chamber 25 Process chambers 26 may be provided. Alternatively, a first group of process chambers 26 may be provided on the lower layer and a second group of process chambers 26 may be provided on the upper layer, respectively, on one side and the other side of the transfer chamber 25. The first group of process chambers 26 and the second group of process chambers 26 may be classified according to the type of the chemical used and the type of the cleaning method.

Hereinafter, an example of the substrate processing apparatus 30 for cleaning the substrate W using the process liquid will be described. FIG. 2 is a plan view showing a substrate processing apparatus provided in the process chamber of FIG. 1, and FIG. 3 is a sectional view showing a substrate processing apparatus provided in the process chamber of FIG. 2 and 3, the substrate processing apparatus 30 includes a chamber 101, a processing container 100, a supporting unit 200, a process liquid supply nozzle 300, an organic solvent supply nozzle 410, A gas nozzle 420, a pure water nozzle 500, a lift unit 600, a cleaning nozzle 700, a treatment liquid supply unit 800, a measurement member 650 and a controller 900.

The chamber 101 has a space therein. Inside the chamber 101, the processing vessel 100 and the supporting unit 200 are located.

The processing vessel 100 provides a processing space in which a substrate processing process is performed. The processing vessel 100 is provided in an open top shape. The processing vessel 100 includes an inner recovery vessel 110, an intermediate recovery vessel 130, and an outer recovery vessel 150. Each of the recovery cylinders 110, 130, and 150 recovers the different treatment liquids among the treatment liquids used in the process. The inner recovery cylinder 110 is provided in an annular ring shape surrounding the support unit 200. The intermediate recovery cylinder 130 is provided in an annular ring shape surrounding the inner recovery cylinder 110. The external recovery cylinder 150 is provided in an annular ring shape surrounding the intermediate recovery cylinder 130. The inner space 111 of the inner recovery vessel 110 and the space 131 between the inner recovery vessel 110 and the intermediate recovery vessel 130 and the space 131 between the intermediate recovery vessel 130 and the outer recovery vessel 150 151 function as an inlet through which the treatment liquid flows into the inner recovery vessel 110, the intermediate recovery vessel 130, and the outer collection vessel 150, respectively. Recovery passages 113, 133 and 153 extending vertically downward from the bottom of the recovery passages 110, 130 and 150 are connected to the recovery passages 110, 130 and 150, respectively. Each recovery line 113, 133, 153 discharges the processing liquid introduced through each of the recovery cylinders 110, 130, 150. The discharged treatment liquid can be reused through an external treatment liquid recovery system (not shown).

The support unit 200 is disposed in the processing vessel 100. The support unit 200 supports the substrate W and rotates the substrate W during the substrate processing process. The support unit 200 includes a spin head 210, a support pin 212, a chuck pin 214, a support shaft 230, and a back nozzle 239. The spin head 210 has an upper surface that is generally circular when viewed from the top. A support shaft 230 rotatable by a motor 250 is fixedly coupled to a bottom surface of the spin head 210. A plurality of support pins 212 are provided. The support pins 212 are spaced apart from the edge of the upper surface of the spin head 210 by a predetermined distance and protrude upward from the spin head 210. The support pins 212 are arranged so as to have a generally annular ring shape in combination with each other. The support pins 212 support the rear edge of the substrate W such that the substrate W is separated from the upper surface of the spin head 210 by a predetermined distance.

A plurality of the chuck pins 214 are provided. The chuck pin 214 is disposed farther away from the center of the spin head 210 than the support pin 212. The chuck pin 214 is provided to protrude upward from the spin head 210. The chuck pin 214 supports the side of the substrate W so that the substrate W is not laterally displaced in place when the support unit 200 is rotated. The chuck pin 214 is provided to be linearly movable between a standby position and a supporting position along the radial direction of the spin head 210. The standby position is a position far from the center of the spin head 210 as compared to the support position. When the substrate W is loaded into or unloaded from the support unit 200, the chuck pin 214 is placed in the standby position and the chuck pin 214 is placed in the support position when the substrate is being processed. At the support position, the chuck pin 214 contacts the side of the substrate.

The back nozzle 239 is located in the spin head 210. The back nozzle 239 supplies the cleaning liquid to the rear surface of the substrate. For example, the cleaning liquid may be pure water. The temperature of pure water supplied may be provided at a temperature of room temperature or higher. For example, 70 to 90 degrees can be provided. The back nozzle 239 is located at the center of the upper surface of the spin head 210, and is projected and provided.

The elevating unit 600 moves the processing vessel 100 linearly in the vertical direction. The relative height of the processing vessel 100 to the support unit 200 is changed as the processing vessel 100 is moved up and down. The elevating unit 600 includes a bracket 610, a moving shaft 630, and a driving unit 346.

 The bracket 610 is fixed to the outer wall of the processing vessel 100. A moving shaft 630, which is vertically moved by a driver 346, is fixedly coupled to the bracket 610. The processing vessel 100 is lowered so that the support unit 200 protrudes to the upper portion of the processing vessel 100 when the substrate W is placed on the support unit 200 or lifted from the support unit 200. [ When the process is performed, the height of the processing vessel 100 is adjusted so that the processing solution can be introduced into the predetermined recovery vessel 110, 130, or 150 according to the type of the processing solution supplied to the substrate W.

For example, while processing the substrate W with the first processing solution, the substrate W is positioned at a height corresponding to the inner space 111 of the inner recovery tube 110. During the processing of the substrate W with the second processing solution and the third processing solution, the substrate W is introduced into the space 131 between the inner recovery tube 110 and the intermediate recovery tube 130, And may be positioned at a height corresponding to the space 151 between the cylinder 130 and the external recovery cylinder 150. The elevating unit 600 can move the supporting unit 200 in the vertical direction instead of the processing vessel 100. [

The treatment liquid supply nozzle 300 can supply the treatment liquid containing ozone water to the substrate W placed on the support unit 200. The process liquid supply nozzle 300 is located outside the substrate W. A plurality of processing liquid supply nozzles 300 may be provided. When a plurality of process liquid supply nozzles 300 are provided, different process liquids can be supplied to the substrate W. [ The treatment liquid supply nozzle 300 is swingably provided. One side of the processing liquid supply nozzle 300 is rotatably provided with respect to its axis. The other end of the process liquid supply nozzle 300 can move between the process position and the standby position. Here, the processing position is a state in which the other end of the processing liquid supply nozzle 300 is positioned above the substrate W. The standby position is located outside the substrate W, and the processing liquid supply nozzle 300 is located at the standby port 310. [ The treatment liquid supply nozzle 300 can supply the treatment liquid to the center of the substrate W. [

The treatment liquid supplied to the substrate W may be a treatment liquid containing ozone water. Alternatively, the treatment liquid may be a mixture of ozone water and pure water. Optionally, the treatment liquid may be a mixture of ozone water and a chemical liquid. For example, the chemical solution may be hydrofluoric acid or ammonia water. Optionally, the treatment liquid may be a mixture of hydrogen peroxide, ammonia water, and water. Optionally, the treatment liquid may be ammonia water. Alternatively, the treatment liquid may be a mixed liquid of ozone water and hydrofluoric acid. The treatment liquid can remove the organic film formed on the substrate. Alternatively, the treatment liquid can remove the photoresist formed on the substrate.

The standby port 310 is located outside the substrate W. The waiting port 310 can be inserted into the end of the processing liquid supply nozzle 300 when the processing liquid supply nozzle 300 is positioned at the standby position. The treatment liquid supply nozzle 300 can perform the pre-discharge at the standby port 310 in the waiting state. For example, the treatment liquid containing the ozone water may be preliminarily ejected from the treatment liquid supply nozzle 300 for a preset time at the standby port 310 before being supplied to the substrate W. For example, the set time may be 20 to 40 seconds. Alternatively, the set time may be 30 seconds.

The organic solvent supply nozzle 410 can supply the organic solvent to the substrate W placed on the support unit 200. As an example, the organic solvent may be isopropyl alcohol. Isopropyl alcohol can be supplied to the substrate W in a liquid phase. The organic solvent supply nozzle 410 is located outside the processing vessel 100. One side of the organic solvent supply nozzle 410 is rotatably provided about its axis. The other side of the organic solvent supply nozzle 410 can move to the process position and the standby position. Here, the process position is such that the other side of the organic solvent supply nozzle 410 is located above the substrate W. The standby position is a state in which the other side of the organic solvent supply nozzle 410 is located outside the processing container 100.

The gas nozzle 420 can supply dry gas to the substrate W placed on the support unit 200. For example, the dry gas may be an inert gas. As an example, the inert gas may be nitrogen gas. The gas nozzle 420 is located outside the processing vessel 100. The gas nozzle 420 and the organic solvent supply nozzle 410 may be provided in one nozzle arm. One side of the gas nozzle 420 is rotatably provided about its axis. The other side of the gas nozzle 420 can move between the process position and the standby position. Here, the process position is such that the other side of the gas nozzle 420 is positioned above the substrate W. The standby position is a state in which the other side of the gas nozzle 420 is located outside the processing vessel 100.

The pure water nozzle 500 supplies the rinsing liquid to the substrate. As an example, the rinse liquid may be pure. Alternatively, the rinsing liquid may be a liquid in which carbon dioxide is dissolved in pure water. If the rinse liquid is a liquid in which carbon dioxide is dissolved in pure water, the resistivity of pure water may be more than 17.5 M OMEGA. The specific resistance of carbon dioxide may be 0.18 M OMEGA.

The pure nozzle 500 is positioned adjacent to the processing vessel 100. For example, the pure water nozzle 500 may be installed at the upper end of the processing vessel 100. For example, the pure water nozzle 500 may be fixed to the upper end of the external recovery cylinder 150. Alternatively, the pure water nozzle 500 may be installed outside the processing vessel 100. The pure water nozzle 500 can supply purified water to the substrate W in a state where the supply of the processing liquid is stopped in the case where the processing liquid to be described later is supplied to the substrate W have. The substrate W can wait in the spin head 210 until the problem is solved.

The pure water nozzle 500 includes a first pure water nozzle 510 and a second pure water nozzle 520. The first pure water nozzle 510 supplies pure water to the substrate. For example, the first pure water nozzle 510 can supply pure water to the center of the substrate. The second pure water nozzle 520 supplies pure water to the substrate. For example, the second pure water nozzle 520 can supply pure water to a point between the center of the substrate and the end of the substrate. For example, the point may be a point corresponding to the center of the radius of the substrate. In the above-mentioned example, pure water is supplied by the pure water nozzle 500, but the pure water can be supplied to the liquid in which the carbon dioxide is dissolved.

4 is a view showing a cleaning nozzle according to an embodiment of the present invention.

Referring to FIG. 4, the cleaning nozzle 700 supplies a cleaning liquid to the substrate W. FIG. The cleaning nozzle 700 supplies the cleaning solution to the substrate W, and then the substrate W is cleaned. The cleaning nozzle 700 is located outside the processing vessel 100. The cleaning nozzle 700 is rotatably provided on one side thereof with respect to its axis. The other side of the cleaning nozzle 700 can move above the substrate W and outside the processing vessel 100.

The cleaning nozzle 700 includes a first cleaning nozzle 710 and a second cleaning nozzle 720. The first cleaning nozzle 710 and the second cleaning nozzle 720 are located adjacent to each other. The first cleaning nozzle 710 supplies a cleaning liquid to the substrate W. [ The second cleaning nozzle 720 applies ultrasonic waves to the cleaning liquid on the substrate W. As an example, the frequency of the applied ultrasonic waves may be 1 to 3 MHz. Alternatively, the output of the ultrasonic waves may be between 1W and 15W.

5 and 6 are views showing a cleaning nozzle according to another embodiment of the present invention. 5 and 6, the cleaning nozzle 700a supplies the cleaning liquid onto the substrate W. [ As seen from above, the cleaning nozzle 700a is provided in a circular shape. The cleaning nozzle 700a includes bodies 710a and 730a, a vibrator 736a, a cleaning liquid supply line 750a, and a cleaning liquid recovery line 760a. The cleaning nozzle 700a discharges the cleaning liquid by an inkjet method.

The bodies 710a and 730a have a lower plate 710a and an upper plate 730a. The lower plate 710a is provided so as to have a cylindrical shape. A flow path 712 through which the cleaning liquid flows is formed inside the lower plate 710a. The flow path 712 connects the inflow path 732a and the recovery path 734a. A plurality of discharge ports 714a for discharging the cleaning liquid are formed on the bottom surface of the lower plate 710a, and each discharge port 714a is provided to communicate with the flow path 712. [ The discharge port 714a is provided as fine holes. The flow path 712 may have a first region 712b, a second region 712c, and a third region 712a. As viewed from above, the first region 712b and the second region 712c are provided in a ring shape. At this time, the radius of the first region 712b is larger than the radius of the second region 712c. The discharge port 714a of the first area 712b may be provided in a row along the first area 712b. The discharge port 714a of the second region 712c may be provided in a second row along the second region 712c. The third region 712a connects the first region 712b and the second region 712c to the inflow channel 732a. The third region 712a connects the first region 712b and the second region 712c to the recovery flow path 734a. For example, as shown in FIG. 6, the third region 712a may be connected to the inflow channel 732a or the recovery channel 734a to the third region 712a. The upper plate 730a is provided in a cylindrical shape having the same diameter as the lower plate 710a. The upper plate 730a is fixedly coupled to the upper surface of the lower plate 710a. An inflow passage 732a and a recovery passage 734a are formed in the upper plate 730a. The inflow passage 732a and the recovery passage 734a are provided so as to communicate with the second region 412b of the flow passage 712. The inlet flow path 732a functions as an inlet through which the cleaning liquid flows into the flow path 712 and the recovery flow path 734a functions as an outlet through which the cleaning liquid is recovered from the flow path 712. [ The inflow channel 732a and the recovery channel 734a are positioned to face each other with respect to the center of the cleaning nozzle 700a.

A vibrator 736a is located inside the upper plate 730a. When viewed from above, the vibrator 736a is provided to have a disc shape. In one example, the vibrator 736a is provided to have the same diameter as the first region 712b. Optionally, the diameter of the vibrator 736a may be greater than the diameter of the first region 712b and less than the diameter of the top plate 730a. The vibrator 736a is electrically connected to an externally located power source 438. [ The vibrator 736a provides vibration to the sprayed cleaning liquid to control the particle size and flow rate of the cleaning liquid. For example, the vibrator 736a may be a piezoelectric element. The cleaning liquid is provided as a cleaning liquid. For example, the cleaning liquid may be electrolytic ionized water. The cleaning liquid may be any one of, or including, hydrogen, oxygen, and ozone water. Optionally, the cleaning liquid may be pure.

The cleaning liquid supply line 750a supplies the cleaning liquid to the inlet flow path 732a and the cleaning liquid recovery line 760a recovers the cleaning liquid from the recovery flow path 734a. The cleaning liquid supply line 750a is connected to the inflow path 732a. The cleaning liquid recovery line 760a is connected to the recovery flow path 734a. A pump 452 and a supply valve 454 are provided on the cleaning liquid supply line 750a. A recovery valve 462 is provided on the cleaning liquid recovery line 760a. The pump 452 pressurizes the cleaning liquid supplied to the inflow path 732a from the cleaning liquid supply line 750a. The supply valve 454 opens and closes the cleaning liquid supply line 750a. The recovery valve 462 opens and closes the cleaning liquid recovery line 760a. According to one example, the recovery valve 462 opens the cleaning liquid recovery line 760a during the process atmosphere. As a result, the cleaning liquid is recovered through the cleaning liquid recovery line 760a and is not ejected through the ejection opening 714a. Alternatively, the recovery valve 462 closes the cleaning liquid recovery line 760a during the process. As a result, the flow path 712 is filled with the cleaning liquid, the internal pressure of the flow path 712 is increased, and when a voltage is applied to the vibrator 736a, the cleaning liquid can be sprayed through the discharge port 714a.

7 is a view showing a cleaning nozzle according to another embodiment of the present invention.

Hereinafter, referring to Fig. 7, the cleaning nozzle 700b supplies liquid to the substrate W in a spray manner. The cleaning nozzle 700b is provided with an air flow nozzle. The cleaning nozzle 700b includes an internal partition 710b and a body 730b. A cleaning liquid flow path 711b is formed inside the cleaning nozzle 700b. The cleaning liquid flow path 711b is provided in such a shape that the sectional area decreases as it goes downward. The cleaning liquid supplied to the substrate W can flow through the cleaning liquid flow path 711b. A discharge port through which the cleaning liquid is discharged is formed in the lower portion of the inner partition wall 710b.

The body 730b is provided in a cylindrical shape. The body 730b is provided so as to surround the inner partition wall 710b. The body 730b is provided in such a shape that its sectional area decreases as it goes downward. The body 730b has a gas flow path 731b formed therein. An inert gas flows through the gas flow path 731b. For example, the inert gas may be nitrogen gas. Alternatively, the gas may be provided with argon gas or the like. A discharge port through which gas is discharged is formed in the lower portion of the body 730b. At the discharge port, a cleaning liquid is supplied from the cleaning liquid supplied from the cleaning liquid flow path 711b and the gas supplied from the gas flow path 731b to the substrate W by spraying.

The controller 900 controls the process liquid supply nozzle 300 and the organic solvent supply nozzle 410, respectively. The controller 900 controls the process liquid supply nozzle 300 and the organic solvent supply nozzle 410 so as to supply isopropyl alcohol after supplying the process liquid to the substrate W. [ Alternatively, the controller 900 may further control the cleaning nozzle 700 and the pure water nozzle 500. The controller 900 controls the process liquid supply nozzle 300, the organic solvent supply nozzle 410, the pure water nozzle 500 and the cleaning nozzle 700 according to the order of the process so that the process liquid, , Pure water and isopropyl alcohol.

8 is a view showing a process liquid supply unit according to an embodiment of the present invention. Hereinafter, referring to FIG. 8, the treatment liquid supply unit 800 supplies the treatment liquid to the treatment liquid supply nozzle 300. The treatment liquid supply unit 800 can mix the ozone water, the pure water, the ozone water, and the chemical liquid to supply the treatment liquid. Hereinafter, the direction in which the fluid flows forward in the direction in which the fluid flows in one point is referred to as the rear direction.

The treatment liquid supply unit 800 includes an ozone water supply member 810, a pure water supply member 815, a chemical liquid supply member 820, a mixing line 830, a circulation line 840, a connection line 850, 860, a secondary circulation line 870, a sensing member 890, and a collection line 880.

The ozone water supply member 810 is connected to the mixing line 830 through an ozone water supply line 811. The ozone water supply member 810 supplies and supplies ozone water of a predetermined concentration. The amount of dissolved ozone in the ozone water may vary depending on the kind of the process and the type of the film formed on the substrate. For example, the dissolved ozone amount of the ozone water supplied by the ozone water supply member 810 may be 80 ppm or more. The ozone water supply line 811 is provided with an ozone water valve 813 for opening and closing the ozone water supply line 811. The ozone water valve 813 can be provided to adjust the flow rate of the ozone water flowing through the ozone water supply line 811. Therefore, it is possible to supply the ozonated water in conjunction with the amount of the processing solution used in the substrate processing apparatus 30. [ The ozone water supply line 811 may be provided with an ozone water flow meter 812.

The pure feed member 815 is connected to the mixing line 830 through the pure feed line 816. The pure supply member 815 supplies pure water to the mixing line 830. The pure water supply member 815 supplies pure water according to the type of the treatment liquid. For example, in the case of a mixed solution of ozone water and pure water, the pure water supply member 815 can supply pure water to the mixing line 830. The pure water supply line 816 is provided with a pure water valve 817. The pure water valve 817 can be provided to adjust the flow rate of the pure water flowing in the pure water supply line 816. The pure feed line 816 may be provided with a pure flow meter 818. The pure water flow meter 818 can measure the flow rate of the pure water flowing in the pure water supply line 817.

The chemical liquid supply member 820 is connected to the mixing line 830 through the chemical liquid supply line 821. [ The chemical liquid supply member 820 supplies the stored chemical liquid. The chemical liquid may be ammonia water or hydrofluoric acid. The chemical liquid supply line 821 is provided with a chemical liquid valve 823 for opening and closing the chemical liquid supply line 821. [ The chemical liquid valve 823 can be provided to adjust the flow rate of the chemical liquid flowing through the chemical liquid supply line 821. In addition, a liquid flow controller 822 may be separately provided in the chemical liquid supply line 821. In the chemical liquid supply line 821, the chemical liquid circulation line 824 may be branched. The chemical solution circulation line 824 is connected to the chemical solution supply member 820, so that the chemical solution is circulated to the chemical solution supply member 820. The chemical liquid circulation line 824 may be branched at the front end of the chemical liquid valve 823. [

The ozonated water supplied to the mixing line 830 and the pure water or the ozonated water and the chemical liquid may be mixed with each other in the course of flowing in the mixing line 830. As an example, the mixing scheme in the mixing line 830 may be mixed in-line. The mixing line 830 is connected to the circulation line 840. The mixed process liquid in the mixing line 830 is supplied to the circulation line 840. A mixing flow meter 831 may be installed in the mixing line 830. The mixed flow meter 831 can measure the flow rate of the mixed process liquid.

The circulation line 840 is provided in a ring shape so that the treatment liquid is circulatingly provided. The circulation line 840 is connected to the mixing line 830, the connection line 850, the discharge line 860 and the auxiliary circulation line 870. The circulation line 840 can supply the treatment liquid to the connection line 850. The circulation line 840 can be connected to the auxiliary circulation line 870 to receive the processing solution. The circulation line 840 may be connected to the discharge line 860 to supply the process liquid to the discharge line 860.

The connection line 850 connects one point of the circulation line 840 and the process liquid supply nozzle 300 to supply the process liquid of the circulation line 840 to the process liquid supply nozzle 300. A filter 841 may be provided at a rear portion of the point where the mixing line 830 is connected and at a front portion of the point where the connecting line 850 is connected to filter out foreign matter. As the filter 841, a polyfluoroethylene-based synthetic resin can be used. The connection line 850 is provided with a supply valve 852 for opening and closing the connection line 850. The supply valve 852 can be provided to adjust the flow rate of the processing liquid flowing through the connection line 850. Further, the connection line 850 may be provided with a process liquid flow meter 851.

The discharge line 860 branches at one point of the circulation line 840 to discharge the process liquid circulating through the circulation line 840. The discharge line 860 is provided with a discharge valve 862 for opening and closing the discharge line 860. The discharge line 860 may be provided with a neutralizing member 861. The neutralizing member 861 can neutralize the ozone contained in the treatment liquid. A sensing member 890 may be provided on the rear side of the neutralizing member 861 or the neutralizing member 861. [ The sensing member 890 senses the concentration of ozone contained in the treatment liquid. For example, the sensing member 890 may sense whether the concentration of ozone in the treatment liquid discharged after being neutralized in the neutralizing member 861 is 3 ppm or less.

The sensing member 890 may be installed at the rear end of the mixing line 830, the connecting line 840, and the auxiliary circulating line 870. The sensing member 890 senses the concentration of ozone contained in the treatment liquid.

The measuring member 650 is located inside the chamber 101. The measurement member 650 can measure the concentration of ozone gas generated when the treatment liquid containing ozone water is supplied to the substrate. The measuring member 650 may be installed on the inner wall of the chamber 101. When the concentration of the ozone gas is equal to or higher than the preset concentration, the substrate processing step is stopped and the ozone gas is discharged to the outside of the processing space.

Hereinafter, a substrate processing method (S100) according to an embodiment of the present invention will be described.

FIG. 9 is a flowchart sequentially showing a substrate processing method according to an embodiment of the present invention, and FIG. 10 is a flowchart showing a process liquid supply step (S130) according to an embodiment of the present invention. 9 and 10, the substrate processing method S100 includes a pre-rinsing step S110, a first chemical supplying step S120, a process liquid supplying step S130, a second chemical supplying step S140, Step S150 and organic solvent supply step S160. The first chemical supply step S120, the process liquid supply step S130, the second chemical supply step S140, the cleaning step S150 and the organic solvent supply step S160 are sequentially performed do. The first chemical supply step (S120), the second chemical supply step (S140), and the cleaning step (S150) may be optional processes. The first chemical supplying step S120, the second chemical supplying step S140, and the cleaning step S150 may be selectively performed depending on the film formed on the substrate W or the type of the process. For example, if only the first chemical supply step S120 is performed during the first chemical supply step S120, the second chemical supply step S140, and the cleaning step S150, the substrate processing method S100 may perform the pre-rinsing step S110 , A chemical supplying step, a treating solution supplying step (S130), and an organic solvent supplying step (S160). Wherein the chemical supply step includes a first chemical supply step (S120) or a second chemical supply step (S140). Hereinafter, the substrate processing method (S100) includes a pre-rinsing step (S110), a first chemical supplying step (S120), a processing liquid supplying step (S130), a second chemical supplying step (S140), a cleaning step (S150) And the supply step (S160) are sequentially performed. Hereinafter, the chemical includes a first chemical and a second chemical, and is described as a first chemical or a second chemical depending on each process.

The pre-rinsing step S110 is a step of supplying a rinsing liquid to the substrate W. The pre-rinse step (S110) is a step for preparing the next process by cleaning the substrate W by supplying a rinsing liquid to the substrate W. The rinsing liquid may be supplied from the pure nozzle 500.

The first chemical supply step (S120) supplies a first chemical to the substrate W to treat the substrate W. As an example, the first chemical may be provided as a mixture of hydrogen peroxide, ammonia water and water. Alternatively, the first chemical may be provided with hydrofluoric acid or ammonia water. For example, in the first chemical supply step S120, the upper film formed on the substrate W may be removed. When the upper film of the substrate W is provided as an oxide film as shown in FIG. 15 or 16, it is possible to remove the oxide film by supplying hydrofluoric acid.

In the process liquid supply step (S130), the process liquid is supplied to process the substrate W. The treatment liquid may be a treatment liquid containing ozone water. For example, the treatment liquid may be provided as a mixture of ozone water and pure water. Alternatively, the treatment liquid may be provided as a mixture of ozone water and a chemical liquid. For example, the chemical solution may be provided with hydrofluoric acid or ammonia water. The ozonated water can be supplied at a set concentration. For example, the amount of dissolved ozone contained in the ozonated water may be 80 ppm or more. 11 and 12, the process liquid may be supplied to a position adjacent to the center of the substrate W in the central region A1 of the substrate W in the process liquid supply step (S130). For example, in the case of a substrate W having a diameter of 300 mm, the treatment liquid can be supplied to a circular area A1 having a radius of 10 mm from the center of the substrate W.

The process liquid supply step (S130) includes a first process liquid supply step (S131) and a second process liquid supply step (S132). In the first process liquid supply step (S131), the processing liquid is supplied while rotating the substrate W at the first processing speed PV1 as shown in FIG. The treatment liquid may be supplied at a position adjacent to the center of the substrate W in the central region of the substrate W. [

The second processing liquid supply step (S132) supplies the processing liquid while rotating the substrate W at the second processing speed PV2 as shown in FIG. The first processing speed PV1 is a processing speed that is slower than the second processing speed PV2. The process liquid supply step S130 rotates the substrate W at the first processing speed PV1 for a period of time during which the deposits accumulate by reacting with the organic matter formed on the substrate W in the initial stage of supplying the process liquid. Thereafter, the substrate W is rotated at a second processing speed PV2, which is faster than the first processing speed PV1 after the organic material is deposited, to remove the reacted foreign matter, and the residual foreign matter is treated with the additional treating solution .

The process liquid supply step (S130) can perform the first process liquid supply step (S131) and the second process liquid supply step (S132) depending on the type of the film formed on the substrate W. As shown in Fig. 15, the upper film C1 of the film formed on the substrate W may be an oxide film, and the lower film C2 may be a film of silicon or poly series.

In this case, in the first chemical supply step S120, hydrofluoric acid is supplied to the substrate W to remove the oxide film C1. Then, in the first process liquid supply step (S131), the process liquid is supplied to the substrate W. For example, the treatment liquid may be a mixture of hydrogen peroxide, ammonia water and water, or a treatment liquid containing hydrogen peroxide or ozone water.

Thereafter, in the second process liquid supply step (S132), a process liquid in which ozone water and ammonia water are mixed is supplied to the substrate W to process the substrate W.

Alternatively, the upper film C1 of the film formed on the substrate W as shown in FIG. 16 may be provided as an oxide film, and the lower film C3 may be provided as an oxide film, a nitride film, or a metal film.

 In this case, in the first chemical supply step (S120), hydrofluoric acid is supplied to the substrate W to remove the oxide film.

Thereafter, the process liquid is supplied to the substrate W in the process liquid supply step (S130). For example, the treatment liquid may be any one of ozone water, a mixture of ozone water and hydrofluoric acid, or a mixture of ozone water and ammonia water.

In the treatment liquid supply step (S130), the treatment liquid is supplied to the in-ozone water supply unit 810, the chemical liquid supply member 820, or the pure water supply member 815, Can be mixed and supplied in a line manner. The concentration of the ozonated water contained in the treatment liquid measures the concentration in one or more of the mixing line 830, the circulation line 840, and the discharge line 860. If the concentration of the ozonated water contained in the treatment liquid exceeds the preset concentration, the process is stopped and pure water is supplied to the substrate W.

In the second chemical supply step (S140), the second chemical is supplied to the substrate W. As an example, the second chemical may be a mixture of hydrogen peroxide, ammonia water and water. Alternatively, the second chemical may be hydrofluoric acid or ammonia water.

The cleaning step S150 is a step of supplying the cleaning liquid to the substrate W. In the cleaning step S150, the cleaning liquid may be supplied to the substrate W in a mist form. In the cleaning step S150, the cleaning liquid may be supplied to the cleaning nozzle 700 using ultrasonic waves. Alternatively, in the cleaning step S150, the cleaning liquid may be supplied to the cleaning nozzle 700 using the vibrator. Alternatively, in the cleaning step (S150), the cleaning liquid may be supplied to the air nozzle for spraying gas into the cleaning liquid and supplying it as mist. The cleaning liquid discharged toward the substrate W in the cleaning step S150 may be supplied at a constant rate. For example, the speed of the rinsing liquid to be discharged may be provided at 20 to 60 m / s. For example, the cleaning liquid may be supplied to the cleaning area A2 of the substrate W. [ The cleaning area A2 is an area between the center of the substrate W and a point spaced from the end of the substrate W by a predetermined distance as shown in Fig. The predetermined distance may be 1 mm or less at the end of the substrate W.

In the organic solvent supply step (S160), isopropyl alcohol is supplied to the substrate (W). Isopropyl alcohol supplied to the substrate W is supplied in the form of a liquid. In the organic solvent supply step (S160), a drying process may be performed on the substrate W by replacing the cleaning liquid with isopropyl alcohol on the substrate W. A drying step of drying the substrate W by supplying a drying gas to the substrate W after the organic solvent supply step (S160) may be performed.

Hereinafter, a substrate processing method (S200) according to another embodiment of the present invention will be described.

17 is a flowchart sequentially showing a substrate processing method according to another embodiment of the present invention. Hereinafter, the substrate processing method (S200) will be described in detail. The substrate processing method (S200) includes the steps of supplying the organic solvent (S210), supplying the processing solution (S220), supplying the chemical (S230) Step S260 and drying step S270. The organic solvent supply step S260 and the drying step S270 are sequentially performed in the order of the pre-rinse step S210, the process liquid supply step S220, the chemical supply step S230, the cleaning step S240, the rinsing supply step S250, .

The pre-rinsing step S210, the chemical supplying step S230, and the cleaning step S240 may be performed either selectively or in accordance with the type of the film formed on the substrate W or the type of the processing solution, . Hereinafter, the substrate processing method (S200) will be described in detail. The substrate processing method (S200) includes a pre-rinse step S210, a process liquid supply step S220, a chemical supply step S230, a cleaning step S240, a rinse supply step S250, And the drying step (S270) are sequentially performed.

The pre-rinse step S210, the process liquid supply step S220, the chemical supply step S230 and the cleaning step S240 of the substrate processing method S200 are the same as the pre-rinse step S110 of the substrate processing method S100, The liquid supply step S120, the chemical supply step S130, and the cleaning step S140.

FIG. 18 is a flowchart sequentially showing the rinsing step of FIG. Hereinafter, referring to FIG. 18, the rinsing step S250 is a step of supplying the rinsing liquid to the substrate W. As an example, the rinse liquid may be pure water or a liquid in which carbon dioxide is dissolved in pure water. If the rinse liquid is a liquid in which carbon dioxide is dissolved in pure water, the resistivity of pure water may be more than 17.5 M OMEGA. The specific resistance of carbon dioxide may be 0.18 M OMEGA. The rinsing liquid can be supplied simultaneously to the center of the substrate W and the point between the center of the substrate W and the end of the substrate W in the rinsing supply step S250 as shown in Fig. Here, the point between the center of the substrate W and the end of the substrate W may be a point corresponding to the center of the radius of the substrate W. [

The rinse supplying step S250 may include a first rinse supplying step S251 and a second rinse supplying step S252.

In the first rinse supplying step S251, the rinsing liquid is supplied while rotating the substrate W at the first rinsing speed RV1 as shown in Fig. In the second rinse supplying step S252, the rinsing liquid is supplied while rotating the substrate W at the second rinsing speed RV2 as shown in Fig. The first rinsing speed RV1 is faster than the second rinsing speed RV2. The rotation speed of the substrate W in the rinse supply step S250 is different from the processing speed in the processing liquid supply step S220 for processing the substrate W with the processing liquid containing the ozonated water. For example, the processing speed is slower than the first rinse rate RV1 and faster than the second rinse rate RV2. In the rinse supplying step (S250) after supplying the treating liquid, the rinse liquid is supplied while rotating the substrate (W) at a speed higher than the treating speed in the first rinse supplying step (S251) It is possible to replace the rinsing liquid quickly. Thereafter, in the second rinse supplying step S252, while the rinsing liquid is continuously supplied, the substrate W is rotated by rotating at the second rinsing speed RV2, which is slower than the first rinsing speed RV1, Can be improved.

19 is a flowchart sequentially showing the organic solvent supply step of FIG. Referring to FIG. 19, isopropyl alcohol is supplied to the substrate W in the organic solvent supply step (S260). Isopropyl alcohol is supplied in the form of a liquid. The organic solvent supply step (S260) includes a first organic solvent supply step (S261), a second organic solvent supply step (S262), and a third organic solvent supply step (S263).

The first organic solvent supply step (S261) supplies the organic solvent to the substrate W rotating at the first drying speed DV1 as shown in FIG. 24 and 25, the first organic solvent supply step (S261) is performed while swinging the substrate W at a predetermined distance from the center of the substrate W and the end of the substrate W one or more times. The organic solvent may be supplied while swinging the organic solvent in the first organic solvent supply step (S261) to uniformly supply the organic solvent to the substrate W.

The second organic solvent supply step (S262) supplies the organic solvent to the substrate W rotating at the second drying speed DV2 as shown in Fig. The second organic solvent supply step (S262) supplies the organic solvent to the center of the substrate W. In the second organic solvent supply step (S262), organic solvent is supplied at the upper portion of the substrate (W), and at the same time pure water higher than room temperature is supplied to the rear surface of the substrate (W). As an example, the temperature of pure water can be between 70 and 90 degrees.

The third organic solvent supply step (S263) supplies the organic solvent of the substrate W rotating at the third drying speed (DV3) as shown in Fig. The third organic solvent supply step (S263) can supply the organic solvent to the center of the substrate W. In the third organic solvent supply step (S263), pure water is not supplied to the rear surface of the substrate (W).

The first drying speed DV1 is equal to the second drying speed DV2. The third drying speed DV3 is faster than the first drying speed DV1 and the second drying speed DV2.

The third drying rate DV3 in the third organic solvent supply step S263 is provided more rapidly in the first organic solvent supply step S261 and the second organic solvent supply step S262 so as to remain on the substrate W It is possible to rapidly discharge the organic matter to the outside of the substrate W, thereby improving the efficiency of the organic solvent processing of the substrate W.

The drying step (S270) is performed after the organic solvent supply step (S260). The drying step (S270) supplies a drying gas to the substrate (W). In one example, the dry gas may be provided as an inert gas. The inert gas may be nitrogen gas.

In the drying step S270, as shown in FIGS. 28 and 29, the drying gas is supplied while repeatedly moving the central region of the substrate W. In the drying step S270, the substrate W rotates at the fourth drying speed DV4. The fourth drying speed DV4 is provided in the same manner as the third drying speed DV3.

In the drying step S270, a drying gas is supplied to the center region of the substrate W to dry the center region of the substrate W during the drying process of the substrate W, The efficiency can be improved.

30 is a graph showing the port resist removal ratio according to the amount of dissolved ozone contained in the treatment liquid. Referring to this, when removing the photoresist formed on the substrate with the treatment liquid (O3HF) containing the sulfuric acid and the ozonated water or the treatment liquid (O3DI) containing the ozonated water, the removal efficiency is high when the dissolved ozone amount of the ozonated water is 80 ppm or more . Therefore, when the processing solution containing ozone water is used, the efficiency of the substrate processing step can be improved.

31 is a graph showing the kind of a treatment liquid for treating a substrate and the amount of particle generation according to the process. In this graph, the vertical axis represents 0 when the amount of generated particles is 100 (ea). For example, if the amount of particles generated during the process is 120 (ea), it corresponds to 20.0 on the vertical axis. The horizontal axis of the graph shows the kind of the treatment liquid and the process sequence.

For example, the generation amount of particles is determined by a cleaning step SP in which a substrate is treated with a mixed solution of sulfuric acid and hydrogen peroxide (SPM), a mixed solution of hydrogen peroxide, ammonia water and water (SC-1) The amount of particle generation is in the range of 20 ~ 60. Alternatively, after the substrate is treated with the treatment liquid (O3HF) containing ozone water, the particles are treated with the mixed solution (SC-1) of hydrogen peroxide, ammonia water and water, and then the cleaning liquid is supplied to the substrate During the process of passing through the cleaning step (SP), the amount of particle generation is in a range between -20 and 20 (ea). The generation amount of the particles is determined by a cleaning step (SC-1) in which after the substrate is supplied with the treatment liquid (O3HF) containing ozone water, the cleaning liquid is supplied to the substrate after the treatment with a mixture of hydrogen peroxide, ammonia water and water The process of supplying isopropyl alcohol after supplying the rinse solution in the range of -20 to 0 (ea) is shown in Fig.

In all of the processes described above, the amount of generated particles is within the range of the reference particle or less, and the efficiency of the substrate processing process is high. Particularly, in the process of supplying isopropyl alcohol after the process with the treatment liquid containing ozone water, the amount of generated particles is lowest and the efficiency of the process is the highest. Referring to the graph according to the above experimental results, it is possible to improve the efficiency of the process of processing the substrate by treating the substrate with the treatment liquid containing ozone water and then supplying the isopropyl alcohol.

According to an embodiment of the present invention, the efficiency of the substrate W processing process can be improved by varying the dissolved ozone amount of the processing solution containing ozone water according to the film formed on the substrate W or the process. In addition, depending on the process of processing the substrate W, a chemical process, a cleaning process, and a rinsing process may be added to improve the efficiency of the cleaning process on the substrate W. [

In addition, according to one embodiment of the present invention, the efficiency of each process can be improved by controlling the rotational speed of the substrate W in the process liquid process, the rinse liquid process, the organic solvent process, and the drying process.

According to an embodiment of the present invention, a process liquid, a rinse liquid, a cleaning liquid, an organic solvent, and a drying gas supplied to the substrate W in the process liquid process, rinse liquid process, cleaning process, organic solvent process, The efficiency of each process can be improved.

According to an embodiment of the present invention, the efficiency of the process of the substrate W can be improved by changing the kind of the film formed on the substrate W, the type of the treatment liquid and the type of the chemical depending on the process.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: processing vessel 200: support unit
210: spin head 300: process liquid supply nozzle
310: Waiting port 410: Organic solvent supply nozzle
420: gas nozzle 500: pure nozzle
600: elevating unit 650: measuring member
700: Cleaning nozzle 800: Treatment liquid supply unit
900: controller

Claims (55)

A method of processing a substrate,
A process liquid supply step of supplying a process liquid containing ozone water to the substrate;
And then supplying an isopropyl alcohol to the substrate.
The method according to claim 1,
Wherein the isopropyl alcohol is supplied in a liquid phase.
The method according to claim 1,
Wherein the substrate processing method further comprises a chemical supplying step of supplying a chemical to the substrate before the process liquid supplying step.
The method according to claim 1,
Wherein the substrate processing method further comprises a chemical supplying step of supplying a chemical to the substrate between the supplying of the treating liquid and the supplying of the organic solvent.
The method according to claim 1,
Wherein the substrate processing method further comprises a cleaning step of supplying a cleaning liquid in a mist form to the substrate between the processing liquid supply step and the organic solvent supply step.
The method according to claim 1,
The substrate processing method includes:
A chemical supplying step of supplying a chemical to the substrate before the process liquid supplying step;
And a cleaning step of supplying a cleaning liquid in a mist form to the substrate between the processing liquid supply step and the organic solvent supply step.
The method according to claim 1,
Wherein the substrate processing method further comprises, between the process liquid supply step and the organic solvent supply step,
A chemical supplying step of supplying a chemical to the substrate;
And a cleaning step of supplying a cleaning liquid to the substrate in a mist form.
The method according to claim 1,
The substrate processing method includes:
A first chemical supplying step of supplying a first chemical to the substrate before the process liquid supplying step;
A second chemical supplying step of supplying a second chemical to the substrate between the process liquid supply step and the organic solvent supply step; And
And a cleaning step of supplying a cleaning liquid to the substrate in a mist form.
9. The method according to any one of claims 1 to 8,
Wherein the substrate processing method further includes a prilling step of supplying a rinsing liquid to the substrate,
Wherein the pre-rinsing step is performed first.
9. The method according to any one of claims 1 to 8,
Wherein the treatment liquid is provided as a mixture of ozone water and pure water.
9. The method according to any one of claims 1 to 8,
Wherein the treatment liquid is provided as a mixture of ozone water and a chemical liquid.
12. The method of claim 11,
Wherein the chemical liquid is provided as hydrofluoric acid or ammonia water.
9. The method according to any one of claims 1 to 8,
Wherein the amount of dissolved ozone in the treatment liquid is 80 ppm or more.
9. The method according to any one of claims 1 to 8,
Wherein the treatment liquid removes the organic film formed on the substrate.
9. The method according to any one of claims 1 to 8,
Wherein the treatment liquid removes the photoresist formed on the substrate.
The method according to any one of claims 3, 4, 6, and 7,
Wherein the chemical is provided as any one of hydrogen peroxide, ammonia water, and water, hydrofluoric acid, and ammonia water.
9. The method according to any one of claims 6 to 8,
Wherein the cleaning liquid is provided as a mixed liquid or pure water of hydrogen peroxide, ammonia water, and water.
9. The method according to any one of claims 1 to 8,
Wherein the processing liquid is supplied to a position adjacent to the center of the substrate in a central region of the substrate.
The method according to claim 1,
In the process liquid supply step,
A first processing liquid supply step of supplying the processing liquid while rotating the substrate at a first processing speed;
And a second processing liquid supply step of supplying the processing liquid while rotating the substrate at a second processing speed different from the first processing speed,
Wherein the first processing speed is slower than the second processing speed.
The method of claim 3,
Wherein the substrate has an upper film and a lower film, the upper film is provided as an oxide film, the lower film is provided as a film containing silicon or a poly series,
Supplying the hydrofluoric acid to the chemical supply step to remove the oxide film,
In the process liquid supply step,
A first processing solution supplying step of supplying a processing solution containing a mixed solution of hydrogen peroxide, ammonia water and water, hydrogen peroxide or ozone water to the substrate;
And supplying a mixed liquid of ozone water and ammonia water to the substrate.
The method of claim 3,
Wherein the substrate has an upper film and a lower film, the upper film is provided as an oxide film, the lower film is provided as an oxide film, a nitride film, or a metal film,
Supplying the hydrofluoric acid to the chemical supply step to remove the oxide film,
Wherein the processing liquid supply step supplies any one of ozone water, a mixed liquid of ozone water and hydrofluoric acid, or a mixed liquid of ozone water and ammonia water to process the substrate.
8. The method according to any one of claims 1 to 7,
A mixing line for mixing the treatment liquid with the concentration of the ozonated water contained in the treatment liquid, a circulation line for circulating the treatment liquid to the substrate and circulating the treatment liquid, and a discharge line for discharging the treatment liquid, Way.
23. The method of claim 22,
And stopping the process when the concentration of the ozone water is out of the set concentration, and supplying pure water to the substrate.
23. The method of claim 22,
Measuring a concentration of ozone gas in a processing space for processing the substrate, and exhausting the ozone gas to the outside of the processing space when the concentration of the ozone gas is higher than a predetermined concentration.
A method of processing a substrate,
A process liquid supply step of supplying a process liquid containing ozone water to the substrate;
A rinse supplying step of supplying a rinse liquid to the substrate;
And then supplying an isopropyl alcohol to the substrate.
26. The method of claim 25,
Wherein the isopropyl alcohol is supplied in a liquid phase.
26. The method of claim 25,
Wherein the amount of dissolved ozone in the treatment liquid is 80 ppm or more.
26. The method of claim 25,
Wherein the treatment liquid removes the organic film formed on the substrate.
26. The method of claim 25,
Wherein the treatment liquid removes the photoresist formed on the substrate.
26. The method of claim 25,
Wherein the rinsing liquid is a solution in which carbon dioxide is dissolved in pure water.
32. The method according to claim 25 or 30,
Wherein the rinsing liquid is supplied simultaneously to the center of the substrate and a point between the center of the substrate and the end of the substrate.
32. The method according to claim 25 or 30,
In the rinsing step,
A first rinsing step of rotating the substrate at a first rinsing speed and supplying the rinsing liquid;
And a second rinse supplying step of supplying the rinse liquid while rotating the substrate at a second rinse rate different from the first rinse rate after the first rinse supplying step.
33. The method of claim 32,
Wherein the first rinse rate is faster than the second rinse rate.
34. The method of claim 33,
Wherein the process liquid supply step rotates the substrate at a processing speed and supplies the processing liquid,
Wherein the processing rate is slower than the first rinse rate and is faster than the second rinse rate.
26. The method of claim 25,
The substrate processing method includes a chemical supplying step of supplying a chemical to the substrate before the organic solvent supplying step
Thereafter, the method further comprises a cleaning step of supplying a cleaning liquid to the substrate,
Wherein the cleaning step is performed such that the cleaning liquid is supplied to the substrate in the form of mist,
Wherein the flow rate of the cleaning liquid discharged toward the substrate when the cleaning liquid is supplied is 20 to 60 m / s.
36. The method of claim 35,
Wherein the cleaning step supplies the cleaning liquid to a cleaning area of the substrate,
Wherein the cleaning area is between a point spaced a predetermined distance from an end of the substrate at a center of the substrate.
37. The method of claim 36,
Wherein the preset distance is 1 mm or less.
26. The method of claim 25,
The organic solvent supply step may include:
The organic solvent is supplied to the substrate rotated at a first drying rate, and the organic solvent is supplied to the substrate at a position spaced apart from the center of the substrate by a predetermined distance, A solvent supply step;
And a second organic solvent supply step of supplying the organic solvent to the center of the substrate rotated at a second drying rate.
39. The method of claim 38,
Wherein the first drying speed and the second drying speed are the same.
40. The method of claim 39,
The organic solvent supply step may include:
And a third organic solvent supplying step of supplying the organic solvent to the center of the substrate rotated at a third drying rate after the second organic solvent supplying step,
Wherein the third drying speed is higher than the second drying speed.
41. The method of claim 40,
Wherein the substrate processing method further includes a drying step of supplying a drying gas to the substrate after the organic solvent supplying step to dry the substrate,
Wherein the drying step supplies a dry gas to the central region of the substrate rotating at a fourth drying speed,
Wherein the fourth drying speed is the same as the third drying speed,
Wherein the third drying speed is higher than the second drying speed.
42. The method of claim 41,
Wherein the drying gas is supplied to the drying gas while repeatedly moving the center region of the substrate.
An apparatus for processing a substrate,
A support unit for supporting the substrate;
A processing liquid supply nozzle for supplying a processing liquid containing ozone water to a substrate placed on the supporting unit; And
And an organic solvent supply nozzle for supplying isopropyl alcohol to the substrate placed on the support unit.
44. The method of claim 43,
The substrate processing apparatus further comprises a controller for controlling the processing liquid supply nozzle and the organic solvent supply nozzle, respectively,
Wherein the controller controls the processing solution supply nozzle and the organic solvent supply nozzle to supply the processing solution to the substrate and then supply the isopropyl alcohol.
45. The method of claim 43 or 44,
The substrate processing apparatus may further include a pure nozzle for supplying pure water to the substrate,
The pure-
A first pure water nozzle for supplying pure water to the center of the substrate;
And a second pure water nozzle for supplying pure water to a point between the center of the substrate and the end of the substrate.
44. The method of claim 43,
The substrate processing apparatus further includes a cleaning nozzle for cleaning the substrate,
In the cleaning nozzle,
A body having a passage through which a cleaning liquid flows and a plurality of discharge ports connected to the passage;
And a vibrator that pressurizes the cleaning liquid flowing through the flow path and discharges the cleaning liquid to the outside through the discharge port.
44. The method of claim 43,
The substrate processing apparatus further includes a cleaning nozzle for cleaning the substrate,
In the cleaning nozzle,
And a body having a cleaning liquid flow path through which a cleaning liquid flows and a gas flow path through which gas is jetted toward the cleaning liquid discharged from the cleaning liquid flow path,
Wherein the cleaning liquid is sprayed by the gas in a spraying manner.
44. The method of claim 43,
The substrate processing apparatus further includes a cleaning nozzle for cleaning the substrate,
In the cleaning nozzle,
A first cleaning nozzle for supplying a cleaning liquid to the substrate;
And an ultrasonic nozzle for applying ultrasonic waves to the cleaning liquid on the substrate.
44. The method of claim 43,
Wherein the substrate processing apparatus further comprises a processing liquid supply unit that mixes the ozone water and the chemical liquid with the processing liquid supply nozzle and supplies the processing liquid.
50. The method of claim 49,
Wherein the processing liquid supply unit includes:
An ozone water supply member for supplying the ozone water;
A chemical liquid supply member for supplying the chemical liquid;
A mixing line connected to the ozone water supply member and the chemical liquid supply member, respectively;
A circulation line connected to the mixing line and circulating the processing liquid; And
And a connection line connecting the circulation line and the process liquid supply nozzle.
44. The method of claim 43,
The substrate processing apparatus further comprises a processing liquid supply unit for mixing the ozone water and pure water with the processing liquid supply nozzle to supply the processing liquid,
Wherein the processing liquid supply unit includes:
An ozone water supply member for supplying the ozone water;
A pure water supply member for supplying the pure water;
A mixing line connected to the ozone water supply member and the pure water supply member, respectively;
A circulation line connected to the mixing line and circulating the processing liquid; And
And a connection line connecting the circulation line and the process liquid supply nozzle.
52. The method of claim 50 or 51,
Wherein the treatment liquid supply unit comprises: a discharge line branched from the circulation line and discharging the treatment liquid circulating through the circulation line;
And a neutralizing member installed in the discharge line for neutralizing ozone contained in the treatment liquid.
53. The method of claim 52,
Wherein the treatment liquid supply unit further comprises a sensing member installed in the circulation line or the discharge line for sensing an ozone concentration of the treatment liquid.
54. The method of claim 53,
The substrate processing apparatus includes:
A chamber having an inner space, the support unit being located in the inner space;
And a measuring member which is located inside the chamber and measures a concentration of ozone gas generated when the processing liquid is supplied to the substrate.
44. The method of claim 43,
Wherein the amount of dissolved ozone in the treatment liquid is 80 ppm or more.
KR1020150161925A 2015-08-13 2015-11-18 Method and apparatus for treating a substrate KR101776023B1 (en)

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