KR101768530B1 - Gas and moisture barrier coating composition for forming a barrier film coating layer and gas and moisture barrier film using the same - Google Patents
Gas and moisture barrier coating composition for forming a barrier film coating layer and gas and moisture barrier film using the same Download PDFInfo
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- KR101768530B1 KR101768530B1 KR1020150110571A KR20150110571A KR101768530B1 KR 101768530 B1 KR101768530 B1 KR 101768530B1 KR 1020150110571 A KR1020150110571 A KR 1020150110571A KR 20150110571 A KR20150110571 A KR 20150110571A KR 101768530 B1 KR101768530 B1 KR 101768530B1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
- C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
- C09D127/04—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
- C09D127/08—Homopolymers or copolymers of vinylidene chloride
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/04—Coating
- C08J7/06—Coating with compositions not containing macromolecular substances
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Abstract
The present invention relates to a coating composition for forming a gas and moisture barrier film coating layer, and to a gas and moisture barrier film using the same, which can prevent cracking of the inorganic vapor deposition layer and uniformize the arrangement of the inorganic vapor deposition layer, A barrier film coating composition having improved adhesion and improved adhesion between other inorganic vapor deposition layers or organic layers without delamination and maintaining stable adhesion and luminance even after a long time reliability test in a high temperature and high humidity environment (PVDC) -based gas and moisture barrier barrier film coating layer and a gas and moisture barrier film using the same.
The coating composition for forming a gas and moisture barrier film coating layer according to the present invention may improve the barrier property by coating the lower or upper surface of the inorganic vapor deposition film and the coating layer coated with the coating composition may be applied to an inorganic vapor deposition layer And can improve the gas and water permeability by controlling the thickness of the coating layer coated with the coating composition and has excellent characteristics that can be cured at a low temperature (within 80 minutes) have.
Description
The present invention relates to a coating composition for forming a gas and moisture barrier film coating layer, and to a gas and moisture barrier film using the same, which can prevent cracking of the inorganic vapor deposition layer and uniformize the arrangement of the inorganic vapor deposition layer, A barrier film coating composition having improved adhesion and improved adhesion between other inorganic vapor deposition layers or organic layers without delamination and maintaining stable adhesion and luminance even after a long time reliability test in a high temperature and high humidity environment (PVDC) as a constituent component, and a gas and moisture barrier film using the coating composition for forming a moisture barrier barrier film coating layer.
In recent years, material development has been actively conducted to develop flexible display materials and improve color reproducibility.
These materials are oxidized by oxygen or water due to the use of inorganic nanoparticles, causing problems such as a decrease in brightness.
In order to solve such a problem, the development of a material capable of effectively preventing the permeation of gases such as oxygen and water permeation, in particular, the importance of a barrier film has been emphasized.
Recently developed gas and moisture barrier films include ethylene vinyl alcohol (EVOH) film and polyvinyl alcohol (PVOH) film. These films have a strong polar group and a strong bonding structure, which is excellent in barrier properties against oxygen and other gases, but has a disadvantage that it is vulnerable to water because it has an OH group at the terminal group.
Polyolefins such as polyethylene (PE), polypropylene (PP) and the like having a nonpolar group are excellent in water barrier property but have a disadvantage that their gas barrier properties are considerably poor due to the fine Brownian motion of molecules due to low Tg.
The conventional film and water barrier film are disclosed in Korean Patent Laid-open Publication No. 10-2009-0062739 as a packaging material, wherein the packaging film comprises a first film portion and a second film portion formed under the first film portion , The first film portion includes an outermost film and a barrier layer formed on the outermost film surface, and the barrier layer may be formed of any one of a transparent deposition layer such as a metal oxide or a coating layer of polyvinyl alcohol, However, the coating layer of polyvinyl alcohol has a disadvantage that it is vulnerable to moisture because it has an OH group at the terminal end.
In addition, Japanese Patent Application Laid-Open Nos. 10-24518 and 10-138433 disclose that in a stretched film comprising a polylactic acid polymer as a main component, silicon oxide is transparently vapor-deposited on one surface to provide gas barrier properties, In this case, although the transparency can be maintained, the thin film layer is easily broken even with slight wrinkling or impact, resulting in poor water and gas barrier properties.
Japanese Patent Application Laid-Open No. 2005-2224 discloses a biodegradable gas barrier film in which an expandable layered silicate is dispersed in an aromatic polyester copolymer containing a diol component. However, the layered silicate is a plate-shaped inorganic mineral, It is difficult to uniformly disperse and even if the gas barrier property is effective, the water barrier property is not effective.
In addition, Japanese Patent Application Laid-Open Nos. 10-60137, 2007-217602, 2007-326290 and 2009-202465 disclose a polyglycolic acid film alone or as a blended film having excellent gas barrier properties, transparency and heat shrinkability However, these films are disadvantageous in that they have poor barrier properties in a high humidity environment where they are exposed to moisture or are in contact with moisture, so that they are difficult to apply to films.
International Patent Publication No. WO 2006/001250 discloses a three-layer coextruded film in which polyglycolic acid is used as a base layer and a biodegradable resin is laminated on both sides as an outer layer. Most of the biodegradable resins used contain gas and moisture The barrier properties of polyglycolic acid in the substrate layer may be poor and the stretching temperatures of the respective layers may be different and the bonding force between the layers may become weak so that delamination may occur between the layers, The uniform elongation can not be achieved and the transparency of the film may be deteriorated.
In addition, the polyvinylidene chloride (PVDC) coating film has excellent barrier properties against oxygen and moisture, but cracks occur due to a decrease in softness due to inorganic substances when an inorganic layer is deposited using inorganic nanoparticles There is a drawback that the barrier property is rapidly lowered.
Thus, the inventors of the present invention have found that it is possible to prevent the inorganic layer on the base film from cracking, to make the arrangement of the inorganic vapor deposition layers uniform, to improve the gas and oxygen permeation prevention characteristics, to improve the adhesion property between the other inorganic vapor deposition layers or organic layers, A barrier film coating composition free from delamination and having properties to maintain stable adhesion and brightness even after a long-term reliability test in a high-temperature and high-humidity environment includes a gas and moisture barrier coating comprising polyvinylidene chloride (PVDC) Compositions were developed.
The present invention prevents cracks in the inorganic vapor deposition layer on the base film, improves gas and oxygen permeation prevention properties by making the arrangement of the inorganic vapor deposition layers uniform, improves adhesion properties between other inorganic vapor deposition layers or organic layers, (PVDC) as a constituent and a barrier film coating composition having characteristics that maintain stable adhesion and luminance even after a long-term reliability test in a high temperature and high humidity environment, And to provide a gas and moisture barrier film using the same.
In order to solve the above-mentioned problems, the present invention provides a coating composition for forming a gas barrier layer and a moisture barrier film coating layer comprising polyvinylidene chloride (PVDC), a silane compound and a solvent.
Wherein the coating composition comprises 20 to 30% by weight of polyvinylidene chloride (PVDC), 10 to 20% by weight of a silane compound and 50 to 70% by weight of a solvent, and a coating composition for forming a gas barrier layer .
The polyvinylidene chloride (PVDC) is a compound represented by the following Chemical Formula 1 and has a weight average molecular weight (Mw) of 130,000 and a number average molecular weight (Mn) of 20,000, and a coating composition for forming a moisture barrier film coating layer This is the solution to the problem.
[Chemical Formula 1]
The silane compound is a methacryloxypropyl triethoxysilane represented by the following formula (2), and a coating composition for forming a coating film layer of a moisture barrier film.
(2)
The coating composition further comprises a isocyanate-modified acrylate and a photoinitiator, and a coating composition for forming a gas barrier layer and a moisture barrier film coating layer.
The isocyanate-modified acrylate has a coating composition for forming a gas and moisture barrier film coating layer which is an isocyanate (HDI) trimer type modified acrylate represented by the following Chemical Formula 3 as a solution to the problem.
(3)
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; And a surface coating layer coated on the base film with the coating composition for forming the gas and moisture barrier film coating layer.
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; An inorganic vapor deposition layer coated on the substrate film; and a surface coating layer coated on the inorganic vapor deposition layer with the coating composition for forming the gas and moisture barrier film coating layer on the inorganic vapor deposition layer, .
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; And an inorganic vapor deposition layer coated on the planarization layer, and a gas barrier film and a moisture barrier film.
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; An inorganic vapor deposition layer coated on the planarization layer; And a surface coating layer coated on the inorganic vapor deposition layer with the coating composition for forming a gas barrier layer and a moisture barrier film coating layer on the inorganic vapor deposition layer.
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; An inorganic vapor deposition layer coated on the planarization layer; A primer layer coated on the inorganic vapor deposition layer with the coating composition for forming the gas barrier layer and the water barrier film coating layer; And an inorganic vapor deposition layer coated on the primer layer as a solution to the problem.
The substrate film layer is made of a polyethylene terephthalate (PET) resin film or a polyethylene naphthalate (PEN) resin film, and a moisture barrier barrier film is a solution to the problem.
The inorganic vapor deposition layer is a silicon (Si), aluminum (Al), silver (Ag), nickel (Ni), chromium (Cr), copper (Cu), iron (Fe), titanium (Ti), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), aluminum oxide (Al 2 O 3 ), and a moisture barrier film.
The coating composition for forming a gas and moisture barrier film coating layer according to the present invention may improve the barrier property by coating the lower or upper surface of the inorganic vapor deposition film and the coating layer coated with the coating composition may be applied to an inorganic vapor deposition layer And can improve the gas and water permeability by controlling the thickness of the coating layer coated with the coating composition and has excellent characteristics that can be cured at a low temperature (within 80 minutes) have.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing that a coating composition for forming a gas and moisture barrier film coating layer of the present invention is composed of a surface coating layer
2 is a view showing that the coating composition for forming a gas and moisture barrier film coating layer of the present invention is composed of a planarizing layer
3 is a view showing that the coating composition for forming a gas and moisture barrier film coating layer of the present invention is composed of a primer layer
The present invention is characterized in that a coating composition for forming a gas barrier layer and a moisture barrier film coating layer comprising polyvinylidene chloride (PVDC), a silane compound and a solvent is characterized in the technical constitution.
The coating composition is characterized by comprising 20 to 30% by weight of polyvinylidene chloride (PVDC), 10 to 20% by weight of a silane compound and 50 to 70% by weight of a solvent and a coating composition for forming a gas barrier layer .
The polyvinylidene chloride (PVDC) is a compound represented by the following Chemical Formula 1 and has a weight average molecular weight (Mw) of 130,000 and a number average molecular weight (Mn) of 20,000, and a coating composition for forming a moisture barrier film coating layer It is a feature of technology construction.
[Chemical Formula 1]
The silane compound is a coating composition for forming a gas and moisture barrier film coating layer, which is methacryloxypropyl triethoxysilane represented by the following formula (2).
(2)
The coating composition further comprises a isocyanate-modified acrylate and a photoinitiator, and is characterized by comprising a coating composition for forming a gas barrier layer and a moisture barrier film coating layer.
The isocyanate-modified acrylate is characterized by the technical composition of a coating composition for forming a gas and moisture barrier film coating layer which is an isocyanate (HDI) trimer type modified acrylate represented by the following formula (3).
(3)
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; And a surface coating layer coated on the base film with the coating composition for forming the gas barrier layer and the moisture barrier film coating layer.
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; An inorganic vapor deposition layer coated on the substrate film; and a surface coating layer coated on the inorganic vapor deposition layer with the coating composition for forming the gas and moisture barrier film coating layer. .
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; And an inorganic vapor deposition layer coated on the planarization layer. The gas barrier film of the present invention is characterized by comprising:
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; An inorganic vapor deposition layer coated on the planarization layer; And a surface coating layer coated on the inorganic vapor deposition layer with the coating composition for forming a gas barrier layer and a moisture barrier film coating layer.
The present invention also provides a method for manufacturing a semiconductor device, comprising: a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; An inorganic vapor deposition layer coated on the planarization layer; A primer layer coated on the inorganic vapor deposition layer with the coating composition for forming the gas barrier layer and the water barrier film coating layer; And an inorganic vapor deposition layer coated on the primer layer.
The base film layer is a polyethylene terephthalate (PET) resin film or a polyethylene naphthalate (PEN) resin film, and is characterized by a technical constitution of a gas barrier film and a moisture barrier film.
The inorganic vapor deposition layer is a silicon (Si), aluminum (Al), silver (Ag), nickel (Ni), chromium (Cr), copper (Cu), iron (Fe), titanium (Ti), indium oxide (In 2 O 3 ), tin oxide (SnO 2 ), aluminum oxide (Al 2 O 3 ), and a water barrier barrier film.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the illustrative embodiments set forth herein.
First, the coating composition for forming a gas and moisture barrier film coating layer of the present invention comprises polyvinylidene chloride (PVDC), a silane compound, and a solvent.
The polyvinylidene chloride (PVDC) coating film has excellent barrier properties against oxygen and moisture. However, when an inorganic layer is deposited using inorganic nanoparticles, a crack is generated due to a decrease in softness due to an inorganic substance, Is rapidly reduced. The present inventors have studied a composition capable of preventing cracks in order to compensate for the disadvantages of polyvinylidene chloride (PVDC). As a result, when a silane compound is mixed with polyvinylidene chloride (PVDC), cracks do not occur, And thus the present invention has been completed.
The use of polyvinylidene chloride (PVDC) having a weight average molecular weight (Mw) of 130,000 and a number average molecular weight (Mn) of 20,000 as the compound represented by the following formula (1) desirable.
[Chemical Formula 1]
Further, it was confirmed that the silane compound preferably uses methacryloxypropyl triethoxysilane represented by the following formula (2).
(2)
Particularly, the coating composition is preferably composed of 20 to 30% by weight of polyvinylidene chloride (PVDC), 10 to 20% by weight of a silane compound and 50 to 70% by weight of a solvent.
If the amount of the polyvinylidene chloride (PVDC) is less than 20% by weight, the barrier property is deteriorated. If the amount is more than 30% by weight, solubility in a solvent is lowered.
If the amount of the silane compound is less than 10% by weight, cracking may occur. If the amount exceeds 20% by weight, barrier properties of polyvinylidene chloride (PVDC) may be affected.
On the other hand, if the amount of the solvent is less than 50% by weight, the solubility of the vinylidene chloride-based resin is lowered so that it is difficult to uniformly coat the coating. When the amount exceeds 70% by weight, sufficient film thickness can not be formed.
In addition, the coating composition may further comprise an isocyanate-modified acrylate and a photoinitiator. The isocyanate-modified acrylate may be prepared by using an isocyanate (HDI) trimer type modified acrylate represented by the following formula (3) It is preferable for moisture interception.
(3)
Further, it is preferable to use Darocur MBF or TPO represented by the following formula (4) and / or formula (5) as the photoinitiator.
[Chemical Formula 4]
[Chemical Formula 5]
On the other hand, referring to FIG. 1 to FIG. 3, the first embodiment of the gas and moisture barrier film of the present invention includes a base film layer of a barrier film; And a surface coating layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer. In this case, the surface coating layer functions and functions as an outermost protective layer and a barrier layer of the barrier film .
Further, a second embodiment of the gas and moisture barrier film of the present invention includes a base film layer of a barrier film; An inorganic vapor deposition layer coated on the base film; and a surface coating layer coated on the inorganic vapor deposition layer with the coating composition for forming the gas and moisture barrier film coating layer. In this case, And functions and acts as a protective layer and a barrier layer.
Further, as a third embodiment of the gas and moisture barrier film of the present invention, a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; In this case, the planarization layer reduces the roughness of the substrate film to enable uniform coating of the inorganic vapor deposition layer, and functions and functions to suppress gas and water permeability. do.
Further, as a fourth embodiment of the gas and moisture barrier film of the present invention, a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; An inorganic vapor deposition layer coated on the planarization layer; And a surface coating layer coated on the inorganic vapor deposition layer with the coating composition for forming gas and moisture barrier film coating layer, wherein the flattening layer reduces the roughness of the substrate film to enable uniform coating of the inorganic vapor deposition layer And the surface coating layer functions and functions as the outermost protective layer and the barrier layer of the barrier film.
Further, as a fifth embodiment of the gas and moisture barrier film of the present invention, a base film layer of a barrier film; A planarization layer coated on the base film with the coating composition for forming the gas barrier layer and the water barrier film coating layer; An inorganic vapor deposition layer coated on the planarization layer; A primer layer coated on the inorganic vapor deposition layer with the coating composition for forming the gas barrier layer and the water barrier film coating layer; In this case, the planarization layer reduces the roughness of the substrate film to enable uniform coating of the inorganic vapor deposition layer, and functions and functions to suppress gas and water permeability. And the primer layer functions and functions to improve the bonding force with the inorganic vapor deposition layer.
The base film layer is preferably a polyethylene terephthalate (PET) resin film or a polyethylene naphthalate (PEN) resin film.
The inorganic vapor deposition layer may be formed of at least one selected from the group consisting of Si, Al, Ag, Ni, Cr, Cu, Fe, Ti, In 2 O 3 ), tin oxide (SnO 2 ), and aluminum oxide (Al 2 O 3 ).
As described above, the coating composition used in the present invention is optimized for reducing the roughness of the substrate, enabling coating of a uniform inorganic vapor deposition layer and suppressing gas and moisture permeability. The inorganic vapor deposition layer is coated with the present composition to increase the efficiency of suppressing the gas and water permeability and the inorganic vapor deposition layer is difficult to form another inorganic layer or organic layer thereon. It is possible to obtain a function and an effect as a primer for improving adhesion with a layer.
Further, there is an advantage that deformation of the base film can be minimized by a fast curing type which is cured at a low temperature for a short time at 80 degrees for 1 to 2 minutes.
The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments and drawings disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.
Claims (11)
The silane compound is 3-methacryloxypropyl triethoxysilane represented by the following formula (2)
(2)
Wherein the isocyanate-modified acrylate is an isocyanate (HDI) trimer type modified acrylate represented by the following formula (3): < EMI ID =
(3)
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