KR101768503B1 - Method of manufacturing semiconductor light emitting device - Google Patents

Method of manufacturing semiconductor light emitting device Download PDF

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Publication number
KR101768503B1
KR101768503B1 KR1020160033423A KR20160033423A KR101768503B1 KR 101768503 B1 KR101768503 B1 KR 101768503B1 KR 1020160033423 A KR1020160033423 A KR 1020160033423A KR 20160033423 A KR20160033423 A KR 20160033423A KR 101768503 B1 KR101768503 B1 KR 101768503B1
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KR
South Korea
Prior art keywords
blade
semiconductor light
emitting device
light emitting
height
Prior art date
Application number
KR1020160033423A
Other languages
Korean (ko)
Inventor
백준승
황광석
이용준
Original Assignee
우리이앤엘 주식회사
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Application filed by 우리이앤엘 주식회사 filed Critical 우리이앤엘 주식회사
Priority to KR1020160033423A priority Critical patent/KR101768503B1/en
Priority to PCT/KR2017/002004 priority patent/WO2017164527A2/en
Application granted granted Critical
Publication of KR101768503B1 publication Critical patent/KR101768503B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • B05C5/0295—Floating coating heads or nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: preparing a substrate having at least one semiconductor light emitting device chip; The method comprising the steps of: discharging an encapsulant through a discharge tube onto a substrate; and passing a first blade moving in the same direction as the discharge tube and moving at a constant height over the encapsulant will be.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a semiconductor light-

The present disclosure relates generally to a method of manufacturing a semiconductor light emitting device, and more particularly, to a method of manufacturing a semiconductor light emitting device capable of reducing variations in the thickness of a sealing material.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a phosphor layer forming apparatus and a method of forming a phosphor layer of a plasma display panel disclosed in Japanese Patent Application Laid-Open No. 2003-317618. A cross section of the head 63 is shown in Fig. A reservoir tank 57b for temporarily storing the phosphor paste and a plurality of channels 56b for discharging the phosphor paste are formed in the head 63 and a structure in which the phosphor paste is discharged from the channel 56b do. In the case of applying the three-color phosphor paste, the heads 63 corresponding to the respective colors are arranged as described above, and the whole is coated. In this case, when the phosphor is applied, there may be a variation in thickness, and bubbles may be generated inside.

2 is a view showing an example of a semiconductor device manufacturing method, a squeeze device and a semiconductor device used in the method disclosed in Japanese Patent Application Laid-Open No. 2006-13274. A mask 12 in which an opening portion 15 is provided in advance to the mounting position of the semiconductor element 13 is formed on the wiring board 11 on which the plurality of semiconductor elements 13 are mounted so that the semiconductor element 13 is in contact with the opening 15 ). Subsequently, the squeeze 2 is placed such that the lower end portion 2b of the squeeze 2 is in contact with the upper surface of the mask 12. [ Then, while the squeeze 2 is moved in the direction indicated by the arrow in the figure, the sealing material is discharged from the discharge port 3 and the semiconductor element 13 is packed. Thereafter, the packaged semiconductor element 13 can be obtained by removing the mask 12. Here, the pressure adjusting section 4 changes the discharge pressure according to the adjustment of the pressure of the sealing material in the tank 6a, and adjusts the discharge amount of the sealing material. By using the pressure adjusting unit 4, the sealing material is adjusted so as to be evenly inserted into the opening so that the sealing material is formed flat. However, there is a problem that the sealing material may be dropped from the substrate due to the process of removing the mask 12 by inserting the sealing material.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: preparing a substrate having at least one semiconductor light emitting device chip; The method comprising the steps of: discharging an encapsulant through a discharge tube onto a substrate; and passing a first blade, which is directed in the same direction as the discharge tube and moves at a constant height, over the encapsulant do.

This will be described later in the Specification for Implementation of the Invention.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a view showing an example of a phosphor layer forming apparatus and a method of forming a phosphor layer in a plasma display panel disclosed in Japanese Patent Application Laid-Open No. 2003-317618,
FIG. 2 is a view showing an example of a semiconductor device manufacturing method, a squeezing device and a semiconductor device used in the method disclosed in Japanese Patent Laid-Open No. 2006-13274,
3 is a view showing an example of a semiconductor light emitting device manufacturing apparatus according to the present disclosure,
4 is a view showing another example of the semiconductor light emitting device manufacturing apparatus according to the present disclosure,
5 is a view showing still another example of a semiconductor light emitting device manufacturing apparatus according to the present disclosure,
6 is a view showing still another example of an apparatus for manufacturing a semiconductor light emitting device according to the present disclosure,
7 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
8 is a view showing another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure,
9 is a view showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
10 is a view showing still another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure,
11 is a view showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
12 is a view showing an example of a vacuum chamber according to the present disclosure;

The present disclosure will now be described in detail with reference to the accompanying drawings.

3 is a diagram showing an example of a semiconductor light emitting device manufacturing apparatus according to the present disclosure.

3 (a) shows a semiconductor light emitting device manufacturing apparatus 100, and FIG. 3 (b) shows a cross section taken along line AA 'in FIG. 3 (a). The semiconductor light emitting device manufacturing apparatus 100 includes a discharge tube 110 and a first blade 120. The sealing material 150 is discharged through the discharge pipe 110, and the discharge pipe 110 moves in a predetermined direction 130. The discharge pipe 110 may include a sealing material supply unit 111 for supplying the sealing material 150 to the discharge pipe 110. The first blade 120 moves along the discharge tube 110 and the direction 130 of the first blade 120 moves constant. The height 140 of the first blade 120 is the distance from the substrate A to the first blade 120. The first blade 120 moves from the substrate A to a constant height 140. The body or motor connected above the first blade 120 and the discharge pipe 110 is omitted. The first blade 120 may be formed of metal, rubber, synthetic resin, ceramic, or the like, and may be formed of a precision machined metal (e.g., SUS 630). The sealing material 150 may be one of a silicone resin and an epoxy resin. Further, .

4 is a view showing another example of the semiconductor light emitting device manufacturing apparatus according to the present disclosure.

The semiconductor light emitting device manufacturing apparatus 100 includes a discharge tube 110, a first blade 120, and a second blade 160. The second blade 160 moves in the direction 130 in which the first blade 120 moves. The second blade 160 is attached to the first blade 120. The second blade 160 may be formed of metal, rubber, synthetic resin, ceramics, or the like, and may be formed of a precision machined metal (e.g., SUS 630). The height 170 of the second blade 160 is the distance from the substrate A to the second blade 160. The second blade 160 moves at a constant height 170 in the same manner as the first blade 120 and is mounted on the substrate A and the semiconductor light- The sealing material 150 is evenly coated. At this time, the height 170 of the second blade 160 is preferably 130 to 170 m lower than the height 140 of the first blade 120. The height 170 of the second blade 160 is 150 μm lower than the height 140 of the first blade 120 so that the deviation of the thickness 180 of the sealing material 150 passing through the second blade 160 It can be reduced to within ± 15 μm. Is substantially the same as the semiconductor light-emitting element manufacturing apparatus 100 described in Fig. 3, except for that described in Fig.

5 is a diagram showing another example of an apparatus for manufacturing a semiconductor light-emitting device according to the present disclosure.

The semiconductor light emitting device manufacturing apparatus 100 illustrated in FIG. 5 may include a first blade 120 designed to change the height 140 of the first blade 120 to improve the difference in the thickness 180 of the encapsulant 150 120) for emitting light to the semiconductor light emitting device (100). The height 140 of the first blade 120 is gradually changed. The second blade 160 is attached to the first blade 120 and moves together to apply the sealing material 150 evenly. The second blade 160 moves along the first blade 120 in the direction 130 in which the first blade 120 moves. The semiconductor light emitting device manufacturing apparatus 100 can operate such that the height 140 of the first blade 120 gradually decreases as shown in FIG. 5 (a), and the semiconductor light emitting device manufacturing apparatus 100 May be operated such that the height 140 of the first blade 200 is gradually increased. As a result, the thickness 180 of the encapsulant 150 can be formed within 占 0 占 퐉. Is substantially the same as the semiconductor light-emitting element manufacturing apparatus 100 described in Fig. 3 except for that described in Fig.

6 is a diagram showing another example of the semiconductor light emitting device manufacturing apparatus according to the present disclosure.

An encapsulation material supply unit 111 may be connected to the discharge pipe 110. And is connected to the encapsulating material supply unit 111 to discharge the encapsulating material 150 through the discharge tube 110. [ And a part of the first blade 120 constitutes the second blade 160. Is substantially the same as the semiconductor light-emitting element manufacturing apparatus 100 described in Fig. 3, except for that described in Fig.

7 is a view showing an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure.

7A is a step of preparing a substrate 200 having at least one semiconductor light emitting device chip 201. FIG. At this time, the substrate 200 and the semiconductor light emitting device chip 201 are electrically connected (not shown). 7 (b) is a step of discharging the encapsulant 150 onto the substrate 200 through the discharge tube 110. As shown in FIG. The discharge tube 110 moves in a constant direction 130 on the substrate 200 at a constant rate. 7 (c) is a step in which the first blade 120 passes at a constant height 140. FIG. The first blade 120 moves in a direction 130 in which the discharge tube 110 moves.

8 is a view showing another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure.

8A is a step of preparing a substrate 200 having at least one semiconductor light emitting device chip 201. FIG. 8 (b) is a step of discharging the encapsulant 150 onto the substrate 200 through the discharge tube 110. As shown in FIG. 8 (c) is a stage in which the first blade 120 passes at a constant height 140. FIG. 8 (d) is a stage in which the second blade 160 passes in the direction in which the first blade 120 passes. The second blade 160 passes after the first blade 120 passes so that the sealing material 150 discharged on the substrate 200 has a predetermined thickness 180 as shown in FIG. 8 (c). The second blade 160 moves in the direction of the first blade 120. The second blade 160 moves at a constant height 170 as in the case of the first blade 120 and applies the sealant 150 with a predetermined thickness 180. [ At this time, the height 170 of the second blade 160 is preferably 130 to 170 μm lower than the height 140 of the first blade 120. The height 170 of the second blade 160 is lowered by 150 占 퐉 than the height 140 of the first blade 400 so that the deviation of the thickness 180 of the sealing material 150 passing the first blade 120 Can be reduced to within ± 15 μm.

9 is a view showing still another example of the method of manufacturing a semiconductor light emitting device according to the present disclosure.

9, when the thickness 180 of the encapsulant 150 tends to be gradually increased within a deviation of ± 15 μm from the starting point 502 of the substrate 200 at the end point 501 of the substrate 200, Is an example of a method. 9A is a step of preparing a substrate 200 having at least one semiconductor light emitting device chip 201. FIG. Thereafter, as shown in FIG. 9 (b), the sealing material 150 is discharged onto the substrate 200 through the discharge pipe 110. Thereafter, as shown in FIG. 9C, the first blade 120 passes over the encapsulant 150. At this time, the height 140 of the first blade 120 gradually decreases from the starting point 502 of the substrate 200 toward the end point 501 as shown in FIG. 9 (d). As a result, Fig. 9 (e) shows that the encapsulant 150 is formed with a constant thickness 180. Fig.

10 is a view showing still another example of the method of manufacturing a semiconductor light emitting device according to the present disclosure.

For example, in FIG. 9, when the thickness 180 of the end point 501 of the substrate 200 tends to be thinner than the thickness 180 of the starting point 502 of the substrate 200, Yes. At this time, Fig. 9D can be used instead of Fig. 10, the height 140 of the first blade 120 gradually increases from the starting point 502 to the end point 501 of the substrate 200. Is substantially the same as the method for manufacturing a semiconductor light emitting element described in Fig. 9 except for that described in Fig.

11 is a view showing still another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure.

As shown in FIG. 11 (a), a substrate 200 having at least one semiconductor light emitting device chip 201 is prepared. At this time, the substrate 200 is placed in a vacuum chamber 300 and then vacuumed, and then the substrate 200 is transferred onto a work table on which the sealing material 150 can be discharged. The sealing material 150 is discharged through the discharge pipe 110 in the vacuum state 305 as shown in FIG. 11 (b). The first blade 120 passes over the encapsulant 150 as the encapsulant 150 discharged in the vacuum state 305 as shown in FIG. 11 (c). Thereafter, the second blade 160 passes in the vacuum state 305 as shown in Fig. 11 (d). The sealing material 150 is discharged in the vacuum state 305 and the sealing material 150 is coated on the semiconductor light emitting device chip 201 with the first blade 120 and the second blade 160. In the vacuum state 305, there is an advantage that the bubbles in the sealing material 150 come out of the sealing material 150 and no bubbles are generated in the sealing material 150.

12 is a view showing an example of a vacuum chamber according to the present disclosure;

A vacuum state is formed in the vacuum chamber 800. The vacuum state is empty with no particles. But the perfect vacuum is technically impossible. So we usually call the state of vacuum lower than atmospheric pressure.

The vacuum chamber 300 has a wall 301 and a ceiling 303 and at least one door 302 is formed on the wall 301. The wall 301 has an engagement surface 311 that engages the bottom (not shown) and the door 302 and includes an O-ring 321 (see FIG. 3) between the engagement surface 311 of the bottom and the engagement surface 311 of the door 301. O-ring) is used to seal the vacuum chamber 300. The O-ring 321 may be formed of a rubber material.

The door 302 is used to enter the inside of the vacuum chamber 300 when the encapsulant 150 and the substrate 200 having the semiconductor light emitting device chip 201 are inserted into the vacuum chamber 300 for manufacturing the semiconductor light emitting device . It is preferable that the door 302 is opened so that the door can not be opened until the process is completed. The vacuum chamber 300 has a motor that draws air out of the vacuum chamber 300. An encapsulant 150 for manufacturing a semiconductor light emitting device and a substrate 200 provided with a semiconductor light emitting device chip 201 are placed in a vacuum chamber 300 and the air in the vacuum chamber 300 is taken out of the vacuum chamber 300, .

Various embodiments of the present disclosure will be described below.

(1) A method of manufacturing a semiconductor light emitting device, comprising: preparing a substrate having at least one semiconductor light emitting device chip; A step of discharging an encapsulant on a substrate through a discharge tube, and a step of passing a first blade moving in the same direction as the discharge tube and moving at a constant height over the encapsulation material.

(2) passing the first blade over the sealing material in the same direction as the discharge tube and at a constant height; And then moving the second blade over the sealing material at a constant height in a direction in which the first blade is moved.

(3) The height of the second blade is lower than the height of the first blade.

(4) The height of the second blade is 150 占 퐉 lower than the height of the first blade.

(5) The method of manufacturing a semiconductor light emitting device according to (5), wherein the second blade is attached to the first blade.

(6) A method of manufacturing a semiconductor light emitting device, wherein a part of the first blade forms a second blade.

(7) A method of manufacturing a semiconductor light emitting device, wherein the first blade and the second blade are formed of a metal.

(8) The method of manufacturing a semiconductor light emitting device according to any one of (1) to (8), wherein the first blade is attached to a discharge tube.

(9) The method for manufacturing a semiconductor light-emitting device, wherein the encapsulant comprises a phosphor.

(10) facing the same direction as the discharge tube and passing the first blade over the sealing material at a constant height; Passing the first blade at a constant height in a direction in which the first blade is moved, wherein the height of the second blade is 150 占 퐉 lower than the height of the first blade, and the second blade is attached to the first blade Wherein the first blade is attached to the discharge tube, the first blade and the second blade are made of metal, and the sealing material includes a phosphor.

According to the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device in which the thickness of the sealing material is small.

Further, according to the present disclosure, there is provided a method of manufacturing a semiconductor light-emitting device having a small luminous efficiency with a small variation in the thickness of the encapsulant.

Claims (10)

A method of manufacturing a semiconductor light emitting device,
Preparing a substrate having at least one semiconductor light emitting device chip;
Discharging an encapsulant on a substrate through a discharge tube;
The first blade traveling in the same direction as the discharge tube and moving at a constant height passes over the encapsulant; And
Moving the first blade in a direction in which the first blade moves and passing the second blade over the sealing material at a constant height,
And the height of the second blade is lower than the height of the first blade. delete delete The method according to claim 1,
And the height of the second blade is 150 占 퐉 lower than the height of the first blade. The method according to claim 1,
And the second blade is attached to the first blade. The method according to claim 1,
And a part of the first blade forms a second blade. The method according to claim 1,
Wherein the first and second blades are formed of a metal. The method according to claim 1,
Wherein the first blade is attached to the discharge tube. The method according to claim 1,
Wherein the encapsulating material comprises a fluorescent material. The method according to claim 1,
The height of the second blade is 150 占 퐉 lower than the height of the first blade,
The second blade is attached to the first blade,
The first blade is attached to the discharge tube,
The first blade and the second blade are formed of metal,
Wherein the encapsulating material comprises a fluorescent material.
KR1020160033423A 2016-03-21 2016-03-21 Method of manufacturing semiconductor light emitting device KR101768503B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160033423A KR101768503B1 (en) 2016-03-21 2016-03-21 Method of manufacturing semiconductor light emitting device
PCT/KR2017/002004 WO2017164527A2 (en) 2016-03-21 2017-02-23 Semiconductor light-emitting device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160033423A KR101768503B1 (en) 2016-03-21 2016-03-21 Method of manufacturing semiconductor light emitting device

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KR101768503B1 true KR101768503B1 (en) 2017-08-18

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235986A (en) * 1999-02-15 2000-08-29 Toshiba Microelectronics Corp Resin-sealing equipment and manufacture of semiconductor device
JP2011056666A (en) * 2009-09-04 2011-03-24 Optnics Precision Co Ltd Squeegee and squeegee assembling object

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000235986A (en) * 1999-02-15 2000-08-29 Toshiba Microelectronics Corp Resin-sealing equipment and manufacture of semiconductor device
JP2011056666A (en) * 2009-09-04 2011-03-24 Optnics Precision Co Ltd Squeegee and squeegee assembling object

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