KR101759010B1 - Conductive material precursor and production method for conductive material - Google Patents

Abstract

The present invention relates to a conductive material precursor capable of forming a conductive pattern having a sufficient total light transmittance and having a good conductivity even in the case of a fine conductive pattern and having a good adhesion property and a conductive material precursor capable of forming a conductive material with high productivity And a method of manufacturing a conductive material. The present invention relates to a conductive film comprising a support, a conductive material precursor having a water-soluble polymer compound, a crosslinking agent and a ground layer containing a metal sulfide, a photosensitive resist layer laminated in this order, and a support, and a base material containing a water-soluble polymer compound, A step of exposing and developing the surface of the photosensitive resist layer of the conductive material precursor having the conductive material precursor laminated in this order to form a resist image of an exposed pattern, A step of forming a conductive pattern on a base layer not covered with the resist image by electroless plating, and a step of removing the resist image thereafter.

Description

TECHNICAL FIELD [0001] The present invention relates to a conductive material precursor and a method for manufacturing the conductive material,

The present invention relates to a conductive material precursor used for obtaining a conductive material used for a conductive circuit of an electronic device, a light-permeable electrode used for a touch panel or the like, an electromagnetic wave shielding material, and the like, and a method for producing the conductive material.

In recent years, along with miniaturization and high performance of electronic devices, there has been a strong demand for fine pitching of conductive patterns. Specifically, in the case of COF (chip-on-film) packaging applications, the pattern pitch of 40 to 50 mu m is minimum in the current mass production line, but the pattern pitch is reduced to 25 mu m after several years and 15 mu m in the future It is aimed at.

At present, as a method of producing a conductive material, a subtractive method in which an etching resist pattern is formed by a so-called photolithography method using a resist layer provided on a metal foil and a metal foil is processed into a pattern by etching is mainly used, From the demand of the above-mentioned fine pitch, thinning of a metal foil (mainly a copper foil) and a resist layer to be etched becomes a priority.

As a material for forming a conductive pattern, a rolled copper foil or an electrolytic copper foil (usually called a " three-layer CCL (copper clad laminate) ") bonded to an insulating support through an adhesive layer, (Usually referred to as " two-layer CCL "), a base metal is formed on an insulating support by a dry plating method such as a vacuum deposition method, an ion plating method or a sputtering method, or an electroless plating method, (Commonly referred to as " copper metallized material ") and the like are used. In the case of a CCL to which a copper foil is bonded, from the viewpoint of securing the adhesion strength, the copper foil bonded surface of the insulating support is chemically roughened in advance to form irregularities, and as a result, transparency of the insulating support after etching is lost Or a loss in high frequency transmission is increased, and the copper metallized material is superior to the CCL in that the metal foil can be further thinned. However, in the production of copper metallized materials, problems such as low process productivity such as dry plating or electroless plating, and high cost have been pointed out.

In order to make the resist layer thinner, a resist that can be made thin, such as a liquid resist or an electrodeposition resist, is used instead of DFR (photosensitive dry film resist) which is generally used. Therefore, a facility and a technique for forming a thin resist layer are required, which is one of the obstacles to the application. This problem is disclosed in Japanese Patent Application Laid-Open No. 2007-210157 (Patent Document 1), which discloses a technique of supplying a resist layer on a metal foil in advance.

On the other hand, as another means of fine pitching, instead of the subtractive method, a thin undercoating metal layer is formed on an insulating support, a resist pattern is formed thereon, a metal layer is laminated on the opening of the resist by electrolytic plating, Called semi-edited method in which circuit formation is performed by removing the underlying metal protected by the resist layer and the resist layer. For example, Japanese Patent Application Laid-Open No. 2007-287953 (Patent Document 2) discloses a method in which a sputter metal layer is formed as a first metal layer on a surface of a support, and a circuit is formed using the semi-edited method. However, the etching process for removing the sputtered metal layer as the underlying metal layer is required several times, and the surface of the support must also be etched, and the productivity is low because the number of processes increases. For the purpose of improving such productivity, in Japanese Patent Application Laid-Open No. 2010-45227 (Patent Document 3), a silver thin film layer obtained by photolithography is used as a base metal layer, and a conductive layer A material precursor is disclosed. However, the production of conductive materials still required an etching process.

On the other hand, Japanese Patent Application Laid-Open No. 8-239773 (Patent Document 4), Japanese Patent Application Laid-Open No. 9-205270 (Patent Document 5), Japanese Patent Application Laid- -18044 (Patent Document 6), etc., an electroless plating underlying layer containing a water-swellable resin, a fine particle of a metal compound and a crosslinking agent is provided on a plastic film, And a resist layer is formed thereon. A metal sulfide such as palladium sulfide or tin sulfide is exemplified as a fine particle of the metal compound. These photosensitive sheets are subjected to electrolytic plating on the exposed underlying metal layer after forming a resist image, and then a conductive pattern is formed by transferring a plating layer (or a plating layer and a resist image) onto an adhesive layer of an insulating support provided with an adhesive layer In the meantime, it is necessary to carry out troublesome steps such as transfer of the plating layer to the insulating support and peeling of the plastic film thereafter, and improvement in productivity has not been achieved.

Which does not require the steps of etching, peeling and transferring as described above, is formed with a small number of production steps, and after a resist image is formed, a lift-off process for forming a conductive pattern by sputtering, Method is known. However, in this method, metal is precipitated along the resist image, and the plating image overcomes the resist image, so that there is a problem that removal of the resist image becomes difficult. Japanese Patent Application Laid-Open No. 2002-134879 (Patent Document 7) discloses that a metal layer can be formed in an accurate shape by forming a catalyst layer for absorbing light of a specific wavelength for curing a plating resist on a support In Japanese Patent Application Laid-Open No. 2007-191731 (Patent Document 8), a resist image is formed on a catalyst layer formed by treating a support with a tin compound, a copper compound, a palladium compound, or the like. Then, electroless plating It is possible to obtain a plated wiring board which is excellent in adhesion property and optical property of a plated film to a support.

On the other hand, in Japanese Patent Application Laid-Open No. 2003-249790 (Patent Document 9), a metal complex reduction layer is applied to a support, a positive resist image is formed thereon, and then a metal complex To form a metal pattern by contacting the metal complex reduction layer, and polyurethane is described as an example of a binder resin contained in the metal complex reduction layer. Further, Japanese Patent Application Laid-Open No. 2011-35220 (Patent Document 10) discloses a method in which a plating catalyst layer is formed on a patternable resin layer by contacting a plating catalyst compound solution to a plating easy resin layer printed in a pattern on a support , Followed by electroless plating and / or electrolytic plating to form a metal pattern, and a polyurethane resin is described as a resin contained in the plating easy-to-coat resin layer.

Japanese Patent Application Laid-Open No. 2007-210157 Japanese Patent Application Laid-Open No. 2007-287953 Japanese Patent Application Laid-Open No. 2010-45227 Japanese Patent Application Laid-Open No. 8-239773 Japanese Patent Application Laid-open No. Hei 9-205270 Japanese Patent Application Laid-Open No. 10-18044 Japanese Patent Application Laid-Open No. 2002-134879 Japanese Patent Application Laid-Open No. 2007-191731 Japanese Patent Application Laid-Open No. 2003-249790 Japanese Patent Application Laid-Open No. 2011-35220

In the method described in Patent Documents 7 and 8, in the step of forming the catalyst layer, since the support is required to be immersed for a plurality of times, when a fine metal pattern having a line width of 25 μm or less is formed with complicated manufacturing steps, Sufficient adhesion between metal patterns can not be obtained, and improvement is required. In addition, the catalyst layer may be unevenly adhered, and a uniform metal thickness can not be obtained, and improvement is required. If a uniform metal thickness can not be obtained in a fine metal pattern, there arises a problem that the resistance value partially fluctuates.

The method described in Patent Document 9 is a method which has a small number of steps and is excellent in productivity. In the metal complex reducing layer (base layer) used herein, however, there is a problem that a sufficient metal pattern can not be formed when the plating time is short . In addition, since a heat-firing step of 150 DEG C or more is required to exhibit conductivity, there is a problem that it is difficult to use a transparent resin film having flexibility. The method described in Patent Document 10 has a problem that it is difficult to obtain a fine and highly conductive metal pattern.

It is an object of the present invention to provide a conductive material precursor capable of forming a conductive pattern having a sufficient total light transmittance and good conductivity and capable of forming a conductive pattern having excellent adhesion even in the case of a fine conductive pattern having a line width of 25 m or less, And a method for producing a conductive material capable of producing a conductive material with high productivity.

The above object of the present invention is basically achieved by a conductive material precursor having a support, a water-soluble polymer compound, a crosslinking agent and a ground layer containing a metal sulfide, and a photosensitive resist layer in this order. Here, the water-soluble polymer compound is preferably polyvinyl alcohol. The crosslinking agent is preferably a polyvalent aldehyde compound. It is preferable that the base layer further contains a urethane polymer latex. The photosensitive resist layer is preferably a positive photosensitive resist layer.

Further, the above object of the present invention is also achieved by a method for manufacturing a semiconductor device, which comprises a step of forming a photosensitive resist layer surface of a conductive material precursor having a support, a ground layer containing a water soluble polymer compound, a crosslinking agent and a metal sulfide, A step of forming a resist pattern of an exposed pattern by performing an electroless plating on the surface on which a resist image is formed to form a conductive pattern on a base layer not covered with the resist image, And a step of removing the conductive material. Here, the water-soluble polymer compound is preferably polyvinyl alcohol. The crosslinking agent is preferably a polyvalent aldehyde compound. It is preferable that the base layer further contains a urethane polymer latex. The photosensitive resist layer is preferably a positive photosensitive resist layer.

According to the conductive material precursor of the present invention and the method for producing the conductive material, even a fine conductive pattern having a line width of 25 占 퐉 or less can form a conductive pattern having a sufficient total light transmittance and good conductivity, A conductive material precursor capable of forming a conductive pattern and a method of manufacturing a conductive material capable of producing a conductive material with high productivity can be provided.

Hereinafter, the present invention will be described in detail. The conductive material precursor of the present invention has a support, a ground layer containing a water-soluble polymer compound, a crosslinking agent and a metal sulfide, and a photosensitive resist layer laminated in this order.

(Support)

Examples of such a support include glass and resin films. From the viewpoint of excellent handling properties, a resin film, more preferably a flexible resin film, is suitably used. Specific examples of the resin film include a polyester resin such as PET (polyethylene terephthalate) and PEN (polyethylene naphthalate), an acrylic resin, an epoxy resin, a fluororesin, a silicone resin, a polycarbonate resin, a diacetate resin, , Polyarylate resins, polyvinyl chloride, polysulfone resins, polyether sulfone resins, polyimide resins, polyamide resins, polyolefin resins, and cyclic polyolefin resins. The thickness of the support is preferably 20 to 300 mu m. When light transmittance is required for a conductive material having a conductive pattern, it is preferable that the support is a transparent support. The total light transmittance of the transparent support is preferably 80% or more, more preferably 90% or more.

The support used for the conductive material precursor of the present invention preferably has an easy adhesion layer. The adhesion facilitating layer is provided for the purpose of improving the coatability (surface quality) of the layer to be coated on the support and the adhesion of the support to the coat. The adhesion facilitating layer is preferably a layer containing a synthetic resin or a water-soluble polymer compound. Examples of such a synthetic resin include acrylic resin, polyester, polyvinylidene chloride, vinyl chloride resin, vinyl acetate resin, polystyrene, polyamide, polyurethane and the like. Among these, acrylic resin, polyester, polyvinylidene chloride, and polyurethane are particularly preferable. The synthetic resin is preferably a water-dispersible polymer (emulsion or latex). Examples of the water-soluble polymer compound include gelatin, polyvinyl alcohol, and the like. The ease of adhesion layer may further contain a matting agent such as silica, a crosslinking agent such as isocyanate or epoxy, a lubricant, a pigment, a dye, a surfactant, an ultraviolet absorber and the like. On the support, a known layer such as an HC (hard coat) layer for the purpose of scratch resistance and an AR (anti reflection) layer for reducing reflectance may be formed.

(Ground floor)

The ground layer in the present invention contains a water-soluble polymer compound, a crosslinking agent, and a metal sulfide. Examples of the water-soluble polymer compound contained in the ground layer in the present invention include water-soluble, anionic polymer compounds, nonionic polymer compounds and amphoteric polymer compounds. As the anionic polymer compound, any of a naturally occurring polymer compound or a synthesized polymer compound can be used, and examples thereof include those having an anionic functional group such as -COO- group and -SO ₃ - group. Specific examples of the anionic natural polymer compound include gum arabic, alginic acid, and pectin. Examples of the anionic semi-synthetic polymer include gelatin derivatives such as carboxymethylcellulose and phthalated gelatin, sulfated starch, sulfated cellulose, ligninsulfonic acid and the like. Examples of the polymer compound of the anionic synthetic example include a copolymer of maleic anhydride (including hydrolyzed), acrylic acid (including methacrylic acid) polymer and copolymer, vinylbenzene sulfonic acid polymer and copolymer, carboxy Modified polyvinyl alcohol, and the like. Examples of the nonionic polymeric compound include polyvinyl alcohol, hydroxyethylcellulose, methylcellulose and the like. Examples of the positive polymer compound include gelatin and the like.

Among the above-mentioned water-soluble polymer compounds, gelatin, gelatin derivatives and polyvinyl alcohol are preferable. In particular, when polyvinyl alcohol is used, it is possible to obtain a conductive material having particularly excellent conductivity in addition to excellent adhesion. Polyvinyl alcohol is preferably a completely or partially saponified polyvinyl alcohol from the viewpoints of the film forming property and the film toughness of the ground layer, and polyvinyl alcohol having a saponification degree of 80% or more is particularly preferable. The average degree of polymerization of the polyvinyl alcohol is preferably from 500 to 6000, more preferably from 1000 to 5,000. The polyvinyl alcohol used in the present invention includes, in addition to general polyvinyl alcohol, cation-modified polyvinyl alcohol, anion-modified polyvinyl alcohol, silanol-modified polyvinyl alcohol, and derivatives of other polyvinyl alcohol. The polyvinyl alcohol may be used alone, or two or more kinds may be used in combination.

In the present invention, the water-solubility of the water-soluble polymer compound means that the solubility in water at 25 ° C is at least 0.5% by mass or more, preferably 5% by mass or more. The content of the water-soluble polymer compound in the ground layer of the present invention is preferably from 1 to 1000 mg, more preferably from 5 to 200 mg, per 1 m2 of the conductive material precursor in terms of solid content.

It is preferable that the ground layer of the present invention further contains a urethane polymer latex in addition to the water-soluble polymer compound. The urethane polymer latex may also be represented by a urethane polymer emulsion, a polyurethane latex, a polyurethane emulsion, or a water-based urethane resin. The urethane polymer latex used in the undercoat layer of the present invention contains fine particles of a urethane polymer synthesized with a polyol and a polyisocyanate. Examples of polyols to be used include polyether polyols, polyester polyols, polycarbonate polyols, and acrylic polyols.

The urethane polymer latex preferred in the present invention is a polycarbonate urethane polymer or a latex of a polyether urethane polymer. Here, the polyether-based urethane polymer means that a polyether polyol is used as the polyol, and the polycarbonate-based urethane polymer means that the polycarbonate polyol is used as the polyol. Hereinafter, the urethane polymer latex preferably used in the present invention will be described.

The polycarbonate polyol can be obtained, for example, by reacting a carbonic ester with a diol. Examples of the carbonic ester include ethylene carbonate, dimethyl carbonate, diethyl carbonate, diphenyl carbonate, and dicyclohexyl carbonate. Examples of the diol include 1,6-hexanediol, 1,4-cyclohexanediol, 1,4-cyclohexanedimethanol, 3-methyl-1,5-pentanediol, polyethylene glycol, polypropylene glycol, polycaprolactone diol , 1,4-butanediol, bisphenol A, and the like. The polycarbonate polyol may also be a polyester polycarbonate obtained by the reaction of a polycarbonate diol with a dicarboxylic acid or polyester.

Examples of the polyether polyol include an aliphatic polyether polyol and an aromatic ring-containing polyether polyol. Examples of the aliphatic polyether polyol include aliphatic low molecular weight active hydrogen atom-containing compounds (divalent to octavalent or higher aliphatic polyhydric alcohols having a hydroxyl equivalent of 30 or more and less than 150 and compounds containing primary or secondary amino groups as active hydrogen atom- ) (Hereinafter abbreviated as AO) adduct may be used. Aliphatic polyhydric alcohols to which AO is added include linear or branched aliphatic dihydric alcohols such as (di) ethylene glycol, (di) propylene glycol, 1,2-, 1,3-, 2,3- and 1,4- , Neopentyl glycol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, 2-methyl-1,8-octanediol, 1,9- , Alicyclic dihydric alcohols (low molecular diols having cyclic groups such as those described in Japanese Patent Publication No. 45-1474), aliphatic trihydric alcohols (glycerin, trimethylolpropane, trialkanolamine, etc.) Diglycerin, triglycerin, dipentaerythritol, sorbit, sorbitan, sorbide and the like), and alcohols having a valence of four or more (pentaerythritol, diglycerin, triglycerin, Examples of the compound containing a primary or secondary amino group to which AO is added include alkyl (having 1 to 12 carbon atoms) and (poly) alkylene polyamine (having 2 to 6 carbon atoms in the alkylene group, 1 to 4 in the number of the alkylene groups, Numbers 2 to 5).

As the aromatic ring-containing polyether polyol, AO adducts of aromatic low molecular weight active hydrogen atom-containing compounds (divalent to octavalent or higher, phenols and aromatic amines having a hydroxyl equivalent of 30 or more and less than 150) may be used. Examples of the phenols to which AO is added include hydroquinone, catechol, resorcin, bisphenol A, bisphenol S and bisphenol F, and aromatic amines include aniline and phenylenediamine.

Examples of AO used in the production of AO adducts include AO having 2 to 12 carbon atoms or more, such as ethylene oxide (hereinafter abbreviated as EO), propylene oxide (hereinafter abbreviated as PO), 1,2-, 2 , 3- and 1,3-butylene oxide, THF (tetrahydrofuran), alpha -olefin oxide, styrene oxide, epihalohydrin (epichlorohydrin, etc.) And / or blocks).

Examples of the aliphatic polyether polyol include polyoxyethylene polyol (polyethylene glycol (hereinafter abbreviated as PEG)), polyoxypropylene polyol (polypropylene glycol (hereinafter abbreviated as PPG)), polyoxyethylene / propylene Polyol, polytetramethylene ether glycol (hereinafter abbreviated as PTMG), and the like.

Examples of the aromatic ring-containing polyether polyol include a polyol having a bisphenol skeleton such as an EO adduct of bisphenol A [EO 2 moles adduct of bisphenol A, EO 4 moles adduct of bisphenol A, EO 6 moles adduct of bisphenol A Water, EO 8-mole adduct of bisphenol A, 10-mole EO adduct of bisphenol A, 20-mole EO adduct of bisphenol A], and PO adduct of bisphenol A [PO 2 mol adduct of bisphenol A, PO 3 mol adduct, PO 5 mol adduct of bisphenol A], and EO or PO adducts of resorcinol.

Examples of the polyisocyanate as a raw material of the urethane polymer contained in the urethane polymer latex used in the undercoat layer of the present invention include aromatic polyisocyanates and aliphatic and alicyclic polyisocyanates. In the present invention, it is preferable to use aliphatic or alicyclic polyisocyanates such as hexamethylene diisocyanate and isophorone diisocyanate.

The urethane polymer latex used in the foundation layer of the present invention is a water dispersion in which urethane polymer microparticles are dispersed in an aqueous medium. The average particle diameter of the urethane polymer microparticles in the urethane polymer latex is preferably 0.01 to 0.3 占 퐉, and more preferably 0.01 to 0.1 占 퐉. In the present invention, the urethane polymer latex used in the undercoat layer is a water dispersion of urethane polymer fine particles at the stage of use for the coating of the undercoat layer, but since the undercoat layer is applied and dried to form a solid coating film, It is not necessary that the urethane polymer latex maintains the state of the water dispersion or the particle shape of the urethane polymer microparticles.

The above urethane polymer latex may be used singly or in combination. The content of the urethane polymer latex in the ground layer of the present invention is preferably 10 to 100% by mass, more preferably 20 to 70% by mass, based on the content of the water-soluble polymer compound.

As the crosslinking agent for use in the ground layer in the present invention, a crosslinking agent having a solubility of 0.5% by mass or more in water at 25 ° C is preferable. For example, an inorganic compound such as chromium alum, formaldehyde, glyoxal, maronal aldehyde, N-methylol compounds such as urea and ethylene urea, mucochloric acid, aldehyde equivalents such as 2,3-dihydroxy-1,4-dioxane and the like, 2,4-dichloro- -Hydroxy-s-triazine salts, 2,4-dihydroxy-6-chloro-s-triazine salts and the like, compounds having active halogens such as sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, A compound having two or more epoxy groups in the molecule such as diglycerol polyglycidyl ether, glycerol polyglycidyl ether, polyethylene glycol diglycidyl ether, and polypropylene glycol diglycidyl ether, divinyl sulfone, divinyl Ketones, N, N, N-tri 2, 6, 7, and 5 of a compound having two or more ethylenimino groups which are three-membered rings of the activity, "Chemical reaction of a polymer" (Okawara Nobuaki (1972), Kagakudojinasha) A known cross-linking agent for a polymer such as a cross-linking agent described in Chapters 2, 9 or 3 can be used. Preferred crosslinking agents are compounds having an active halogen such as polyhydric aldehydes and 2,4-dichloro-6-hydroxy-s-triazine salts and 2,4-dihydroxy-6-chloro-s- Among them, a polyaldehyde compound is preferable. When a polyaldehyde compound is used as a crosslinking agent, it is possible to obtain a conductive pattern having particularly excellent conductivity.

The polyvalent aldehyde compound is a compound having at least two aldehyde groups in the molecule, and typical examples of the polyvalent aldehyde compound include glyoxal, maronal aldehyde, glutaraldehyde, succinic aldehyde, heptandial, octadial, nonadial, , Aliphatic dialdehydes such as dodecanedialdehyde, 2,4-dimethylheptanedialde, and 4-methylhexanedialdehyde, aromatic dialdehydes such as terephthalaldehyde and phenylmalone dialdehyde, and aromatic dialdehydes such as methanol, ethanol, propanol, ethylene glycol, propylene Acetal compounds in which alcohols such as glycols have reacted and trialdehyde compounds such as N, N ', N "- (3,3', 3" -trisulfonylethyl) isocyanurate. Particularly preferred polyaldehyde compounds are dialdehyde compounds, especially glutaraldehyde and glyoxal. The polyvalent aldehyde compound may be used singly or in combination of two or more kinds. The content of the crosslinking agent in the base layer is preferably 1 to 200% by mass based on the content of the water-soluble polymer compound.

Further, in the present invention, the crosslinking agent used in the ground layer causes a crosslinking reaction with the residual hydroxyl groups of the water-soluble polymer compound or the urethane polymer latex, so that the base layer of the present invention may contain the reaction product of the polymer compound and the crosslinking agent , It is not always necessary that the crosslinking agent is present in the base layer in an unreacted state.

The metal sulfide contained in the ground layer of the present invention is mainly a fine particle of a heavy metal sulfide (particle size is about 1 to several tens nm). Typical examples of the metal sulfide include colloidal particles such as gold and silver, metal sulfides obtained by reacting water-soluble salts such as palladium, zinc and tin with sulfides, and the like. The content of the metal sulfide used as the base layer is preferably 0.1 to 10 mg per 1 m2 of the conductive material precursor in terms of solid content.

It is preferable that the undercoat layer of the present invention is formed by applying a coating liquid containing the above-described components onto a support by using water as a main medium and drying it. As a coating method, a quantitative coating method such as dip coating, slide coating, curtain coating, bar coating, air knife coating, roll coating, gravure coating, spray coating and the like can be used. Various coating aids such as surfactants may be used for the base layer in accordance with the coating method to be used. In order to promote crosslinking of the coating film, it is preferable that the base layer of the present invention is heated at a temperature of 30 to 50 캜 for 3 to 7 days after the coating film is formed.

(Photosensitive resist layer)

The conductive material precursor of the present invention has a photosensitive resist layer on the underlying layer provided on the support and does not have a metal layer in advance between the support and the ground layer or between the ground layer and the photosensitive resist layer. The photosensitive resist layer may be provided by laminating a dry film resist. From the viewpoint of fine patterning, it is preferable that the photosensitive resist layer is a photosensitive resist layer formed by applying and drying a photosensitive liquid resist. Further, in order to prevent deterioration of the photosensitivity and the like due to contact with the ground layer, it is more preferable to use a positive photosensitive resist layer.

As the positive photosensitive resist layer, it is preferable to use a photosensitive resist layer which is capable of dissolving and removing a photosensitive and soluble part with an aqueous developer containing an alkali aqueous solution as a main component. In particular, a quinonediazide positive photoresist layer is preferable. The positive-type photoresist layer contains an alkali-soluble resin and a photosensitizer as a photo-degradation component. The alkali-soluble resin is preferably a cresol novolak resin. As the photosensitizer, naphthoquinone diazidesulfonic acid ester is preferable. In the present invention, the positive photosensitive resist layer may contain, for example, an epoxy resin or an acrylic resin compatible with an alkali-soluble resin, a polyvinyl ether as a plasticizer, other stabilizers, Leveling agents, dyes, pigments, and the like.

The thickness of the photosensitive resist layer is preferably 10 占 퐉 or less, more preferably 5 占 퐉 or less, and further preferably 3 占 퐉 or less. The lower limit value of the film thickness is preferably 0.5 占 퐉 or more in order to assure required resist performance and uniformly perform coating without defects.

In the present invention, when a photosensitive liquid resist is applied to form a photosensitive resist layer, a coating method such as dip coating, slide coating, curtain coating, bar coating, air knife coating, roll coating, gravure coating, A coating method such as a coating method can be used. In addition, various coating aids such as surfactants and thickeners may be used in accordance with the coating method to be used.

(Method for producing conductive material)

Next, a method of manufacturing the conductive material of the present invention will be described. The method for producing a conductive material of the present invention includes the steps of exposing and developing the surface of the photosensitive resist layer of the above-described conductive material precursor to an arbitrary pattern, forming a resist image of the exposed pattern, A step of forming a conductive pattern (metal layer) preferentially on a base layer on which a resist image is not coated by plating, and a step of removing the resist image thereafter. As a method of pattern exposure, there is a method of exposing the surface of the photosensitive resist layer to a photomask having an arbitrary pattern in close contact with each other. Here, an arbitrary pattern refers to a light-transmitting electrode for a touch panel having a metal mesh pattern and a peripheral trace wiring pattern. For example, the arbitrary pattern may be a mesh pattern composed of a square, a rhombus, , Peripheral trace wiring pattern. Regarding the line width of the metal mesh pattern, metal thin wires having a line width of about 1 to 50 mu m are used in consideration of conductivity, light transmittance, and the like. The pitch (length of the repeating unit) is similarly set to about 100 to 1000 mu m. The peripheral trace wiring is set to 10 to 200 mu m in line and space (line width and line spacing of a plurality of arranged trace wirings). In the case of exposure of a fine pattern having an arbitrary pattern, particularly a line width of 10 mu m or less, it is preferable to perform a parallel light exposure using a parallel light source while closely contacting the photomask. The method for producing a conductive material of the present invention is particularly suitable for producing a pattern of fine metal wires having a line width of 10 mu m or less. As a method of pattern exposure, there is also a method of scanning exposure of the surface of the photosensitive resist layer in an arbitrary pattern by using laser light in the photosensitive region of the photosensitive resist layer. As to the development of the resist after exposure, it is preferable to use an alkaline aqueous solution from the viewpoint of environmental load reduction. By subjecting the photosensitive resist layer exposed to an arbitrary pattern to development processing, a base layer appears in the region where the photosensitive resist layer is dissolved and removed, and a resist image having an arbitrary pattern is formed.

In the method for producing a conductive material of the present invention, electroless plating is performed on the surface on which a resist image is formed, obtained as described above, so that metal is preferentially deposited on a base layer of a region not covered with a resist image, To form a metal pattern. As the electroless plating method, known plating methods such as copper plating, nickel plating, zinc plating, tin plating and silver plating can be used. Among them, the electroless silver plating method is preferable from the viewpoint of conductivity.

As the electroless silver plating method, two solutions of a silver nitrate silver nitrate solution containing silver nitrate and ammonia and a reducing agent solution containing a reducing agent and a strong alkali component are allowed to be mixed on the surface of a conductive material precursor on which a resist image having an arbitrary pattern is formed And a redox reaction is generated to precipitate the metal silver.

Examples of the reducing agent solution include a reducing agent such as an aldehyde compound such as glucose and glyoxal, a hydrazine compound such as hydrazine sulfate, hydrazine carbonate hydrate or hydrazine hydrate, and a reducing agent solution containing a strong alkali component typified by sodium hydroxide. Such a reducing agent solution may contain sodium sulfite or sodium thiosulfate.

Some additives may be added to the silver nitrate silver nitrate solution to produce a good conductive silver metal. Amino-2-hydroxymethyl-1,3-propanediol, 1-amino-2-propanol, 2-amino-1-propanol, Amino alcohol compounds such as diethanolamine, diisopropanolamine, triethanolamine, and triisopropanolamine; amino acids such as glycine, alanine, sodium glycine and salts thereof; and the like, but are not particularly limited.

As a method for giving two solutions of the ammoniacal silver nitrate silver solution and the reducing agent solution to be mixed on the surface of the conductive material precursor on which the resist image having an arbitrary pattern is formed, two kinds of aqueous solutions are mixed in advance, A method of spraying using a concentric spray gun having a structure in which two kinds of aqueous solutions are mixed in a head of a spray gun and discharged immediately, a method in which two kinds of aqueous solutions are mixed in two Two spray guns each having two spray nozzles, and a method of simultaneously spraying two kinds of aqueous solutions using two spray guns. These can be selected arbitrarily depending on the situation.

In the method for producing a conductive material of the present invention, the treatment time of electroless plating is preferably 5 to 300 seconds in order to platethe plating to a practically required level of conductivity. The thickness of the preferable plating layer is 0.1 to 1 占 퐉. When the conductive material precursor of the present invention is used, plating is progressed rapidly, a stable metal layer is obtained in a short time, and baking by heat treatment is not required, and sufficient conductivity is obtained only by normal natural drying.

In the method for producing a conductive material of the present invention, the resist image remaining after electroless plating is removed using a peeling solution suitable for the photosensitive resist layer used. Generally, an organic solvent or an alkaline aqueous solution for swelling a resist image can be removed by spraying and swelling the resist image. From the viewpoint of reducing the environmental load, it is preferable to use an alkaline aqueous solution. Examples of such an aqueous alkaline solution include inorganic alkalis such as sodium carbonate, sodium hydroxide, potassium hydroxide, sodium silicate, sodium metasilicate and ammonia water, primary amines such as ethylamine and n-propylamine, Tertiary amines such as triethylamine and methyldiethylamine; aminoalcohols such as dimethylethanolamine and triethanolamine; amines such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; An alkaline aqueous solution having a pH of 11 to 14 and containing cyclic amines such as quaternary ammonium salts, pyrrole and piperidine can be used. Alcohols, surfactants, etc. may be added to the alkaline aqueous solution in an appropriate amount. These alkali aqueous solutions are also used for the development of the above-described photosensitive resist layer. As described above in detail, the manufacturing method of the conductive material of the present invention does not include the etching step.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to these Examples.

Example

&Quot; Preparation of conductive material precursor 1 "

As a support, a polyethylene terephthalate film having a thickness of 100 占 퐉 (Lumirror U34 (both-side adhesive type) manufactured by Toray Industries, Inc.) was used. When the total light transmittance of the support was measured using a double beam type haze computer (manufactured by Suga Shikenki K.K.), it was 92.4%. Using the palladium sulfide sol prepared as described below, a coating solution for ground layer 1 having the following composition was prepared. Using a diagonal gravure roll having a diameter of 60 mm, a diagonal angle of 45 degrees, a line number of 90 lines / inch, and a groove depth of 110 탆, the coating of the underlayer 1 was coated on the support by reverse rotation and kiss- , And the film was heated at a warming temperature of 40 캜 for one week after formation.

≪ Preparation of palladium sulfide sol &

The solution A and the solution B were mixed while stirring, and after 30 minutes, they were passed through a column filled with an ion exchange resin to obtain a palladium sulfide sol.

≪ Composition of coating solution of ground layer 1 / amount per 1 m < 2 > of conductive material precursor &

The photosensitive liquid resist containing the cresol novolac resin and the naphthoquinone diazidesulfonic acid ester was coated on the ground layer 1 thus obtained by reverse rotation using the above-mentioned slanting gravure roll and with a kiss touch, Minute to form a positive photosensitive resist layer having a dry film thickness of 1.5 mu m to obtain a conductive material precursor 1. [

&Quot; Preparation of conductive material precursor 2 "

In the same manner as in the production of the conductive material precursor 1 except that PVA117 (saponification degree: 99%, manufactured by Kabushiki Kaisha, saponification degree: 1700) was used instead of PVA217 as the polyvinyl alcohol in the production of the coating solution for the ground layer 1, Material precursor 2 was obtained.

&Quot; Preparation of conductive material precursor 3 "

Except that a cation-modified polyvinyl alcohol (CM-318, degree of saponification: 88%, degree of saponification: 1800) was used instead of PVA217 as the polyvinyl alcohol in the preparation of the coating solution for the ground layer 1, the conductive material precursor 1 The conductive material precursor 3 was obtained.

&Quot; Preparation of conductive material precursor 4 "

The conductive material precursor 4 was obtained in the same manner as in the production of the conductive material precursor 1 except that glyoxal was used in place of glutaraldehyde in the production of the coating solution of the ground layer 1. [

&Quot; Preparation of Conductive Material Precursor 5 &

A conductive material precursor 5 was obtained in the same manner as in the production of the conductive material precursor 1 except that the tin sulfide sol prepared as described below was used in place of the used palladium sulfide sol in the preparation of the base material 1 coating solution.

<Preparation of tin sulfide sol>

The solution A and the solution B were mixed while stirring, and after 30 minutes, they were passed through a column filled with an ion exchange resin to obtain a tin sulfide sol.

&Quot; Preparation of conductive material precursor 6 &quot;

A conductive material precursor 6 was obtained in the same manner as in the production of the conductive material precursor 1 except that butylaldehyde was used in place of glutaraldehyde in the production of the coating solution for the ground layer 1. [

&Quot; Preparation of conductive material precursor 7 &quot;

A conductive material precursor 7 was obtained in the same manner as in the production of the conductive material precursor 1 except that the coating solution of the ground layer 2 of the following composition was prepared using the palladium sol prepared as described below instead of the coating of the ground layer 1 .

&Lt; Preparation of palladium sol &

Solution B was stirred with a stirrer, and Solution A and Solution C were added slowly at the same time. After 30 minutes, the solution was passed through a column filled with an ion exchange resin to obtain a palladium sol.

&Lt; Amount per 1 m &lt; 2 &gt; of the coating solution of the undercoat layer 2 /

&Quot; Preparation of conductive material precursor 8 &quot;

A conductive material precursor 8 was prepared in the same manner as in the production of the conductive material precursor 1 except that the palladium sol used in preparing the coating solution of the ground layer 2 was used in place of the used palladium sulfide sol, .

&Quot; Preparation of conductive material precursor 9 &quot;

A conductive material precursor 9 was obtained in the same manner as in the production of the conductive material precursor 1 except that the tin sol prepared as described below was used in place of the used palladium sulfide sol in the preparation of the coating solution for the ground layer 1.

&Lt; Preparation of tin sol &

Solution B was stirred with a stirrer, and Solution A and Solution C were slowly added at the same time. After 30 minutes, the solution was passed through a column filled with an ion exchange resin to obtain tin sol.

&Lt; Preparation of conductive material precursor 10 &

A conductive material precursor 10 was obtained in the same manner as in the production of the conductive material precursor 1 except that the palladium sulfide sol was removed in the production of the coating solution for the ground layer 1. [

&Quot; Preparation of conductive material precursor 11 &quot;

A polyethylene terephthalate film used as a support in the production of the conductive material precursor 1 was immersed in a 1% by mass palladium chloride solution for 2 minutes and dried once to form a support, and a positive photosensitive resist layer , And the conductive material precursor 1 was prepared in the same manner as in the production of the conductive material precursor 1.

&Quot; Preparation of conductive material precursor 12 &quot;

A polyethylene terephthalate film used as a support in the production of the conductive material precursor 1 was immersed in a tin chloride solution of 1 mass% for 2 minutes and dried once to form a support, and a positive photosensitive resist layer , And the conductive material precursor 1 was prepared in the same manner as in the production of the conductive material precursor 1 to obtain the conductive material precursor 12.

&Quot; Preparation of conductive material precursor 13 &quot;

The base layer was not provided directly on the polyethylene terephthalate film used as the support in the production of the conductive material precursor 1 and the positive photosensitive resist layer was directly provided in the same manner as the conductive material precursor 1 to obtain the conductive material precursor 13. [

&Lt; Fabrication of conductive material &

Each of the conductive material precursors 1 to 13 thus obtained was coated with a grid pattern image having a line width of 3 占 퐉 (transparent portion) and a line spacing of 300 占 퐉 (shielding portion) on the surface of the photosensitive resist layer, And a mask image having a mask image including a line / space image having a line width of 10 mu m (light-projecting portion) and a line spacing of 10 mu m (light-shielding portion) and parallel fine lines are arranged in vacuum, Light having a wavelength in the photosensitive region of the photosensitive resist layer (ultrahigh-pressure mercury lamp) was condensed, and parallel light exposure was performed through a collimator lens. Each of the conductive material precursors 1 to 13 after exposure was developed with a 1 mass% sodium carbonate aqueous solution having a liquid temperature of 30 캜 as a developing solution and spraying the developing solution onto the photosensitive resist layer for 30 seconds by a shower method to obtain a resist image. The exposure amount was set so that the line width of a region of the line / space image portion that was not covered with the resist image (region where the base layer was exposed) was 10 mu m. The line width of the resist image portion was confirmed by a confocal microscope (OPTELICS C130 manufactured by Lasertec).

Next, the surface of each conductive material precursor having the resist image was washed with deionized water, and deionized water was blown out by compressed air. Thereafter, the solution of ammonium nitrate silver nitrate prepared as described below and the reducing agent solution were applied by a double head spray gun , And for 30 seconds simultaneously on the side having the resist image to perform electroless silver plating, and a silver plating layer was formed on the ground layer not covered with the resist image. Thereafter, it was washed with deionized water and air-dried. The injection amount of the two-head spray gun was 240 ml / min.

&Lt; Preparation of ammoniacal silver nitrate silver solution >

D solution and E solution were mixed at a mass ratio of 1: 1 to obtain an ammoniacal silver nitrate solution.

&Lt; Preparation of reducing agent solution >

These were dissolved in 1000 g of deionized water to obtain a reducing agent solution.

Next, a 5 mass% sodium hydroxide solution was sprayed for 60 seconds on the side of the conductive material precursor having a resist image to dissolve and remove the resist image, washed with water and air-dried to obtain a silver image And conductive materials 1 to 10 having a conductive pattern containing a silver image of line / space were obtained. Further, in the case of using the conductive material precursors 11 to 13, a silver image by electroless silver plating was not obtained.

&Lt; Measurement of sheet resistance value of conductive pattern &

The sheet resistance values of the lattice pattern portions of the obtained conductive materials 1 to 10 were measured according to JIS K7194 using a Loresta GP / ESP probe (manufactured by Daiichi Instruments Co., Ltd.). The results are shown in Table 1. In the conductive materials 7 to 10, a silver image is recognized in the lattice pattern portion, but the sheet resistance value is excessively high due to unevenness of disconnection or silver image in some places, and a specific value is not obtained. . In actual use, the sheet resistance value is preferably 50? /? Or less.

&Lt; Measurement of Total Light Transmittance of Conductive Pattern >

The total light transmittance of the lattice pattern portions of the obtained conductive materials 1 to 10 was measured using a double-beam type haze computer (manufactured by Suga Shikki K.K.). The results are shown in Table 1. In practical use, the total light transmittance is preferably 80% or more.

&Lt; Measurement of Line Width and Thickness of Plated Metal Laminated Part of Conductive Pattern >

Five arbitrary lines were selected from the line / space portions of the obtained conductive materials 1 to 10, and these line widths and thicknesses were measured with a confocal microscope (Optelix C130, manufactured by Laser Tec Corporation). Table 1 shows the average values of five obtained line widths and the thicknesses of the thin lines of the obtained lines N1 to N5. The average value of the line width is preferably close to 10 占 퐉, which is the line width of the mask image, and it is preferable that the thickness of the fine line is sufficient to exhibit conductivity and has a small deviation.

&Quot; Preparation of conductive material precursor 14 &quot;

In the production of the conductive material precursor 1, the conductive material precursor 14 was obtained in the same manner as in the production of the conductive material precursor 1, except that a coating solution of the ground layer 3 having the following composition was prepared in place of the coating solution of the ground layer 1.

&Lt; Composition of the coating of the foundation layer 3 / amount per 1 m &lt; 2 &gt; of the conductive material precursor &

&Quot; Production of conductive material precursor 15 &quot;

In the preparation of the coating solution for the undercoat layer 3, 6 mg of a polyether-based urethane polymer latex (Urano W600 available from Arakawa Chemical Industries, Ltd., average particle size 0.05 占 퐉) was used as a solid content in place of the polycarbonate urethane polymer latex , A conductive material precursor 15 was obtained in the same manner as in the production of the conductive material precursor 14.

&Quot; Production of conductive material precursor 16 &quot;

In the preparation of the coating solution for the foundation layer 3, a polyester-based urethane polymer latex (Superflex 500, average particle diameter 0.14 占 퐉, manufactured by Dai-ichi Kogyo Seiyaku Co., Ltd.) was used as a solid component in place of the polycarbonate urethane polymer latex A conductive material precursor 16 was obtained in the same manner as in the production of the conductive material precursor 14 except that it was used.

&Quot; Preparation of conductive material precursor 17 &quot;

A conductive material precursor 17 was obtained in the same manner as in the production of the conductive material precursor 14 except that glyoxal was used instead of glutaraldehyde in the preparation of the coating solution of the ground layer 3. [

&Quot; Preparation of conductive material precursor 18 &quot;

In the same manner as in the production of the conductive material precursor 14 except that PVA117 (saponification degree: 99%, degree of saponification: 1700) was used instead of PVA217 as the polyvinyl alcohol in the production of the coating solution for the ground layer 3, A material precursor 18 was obtained.

&Quot; Production of conductive material precursor 19 &

A conductive material precursor 19 was obtained in the same manner as in the production of the conductive material precursor 14 except that the tin sulfide sol was used instead of the used palladium sulfide sol in the preparation of the coating solution for the ground layer 3. [

&Lt; Preparation of conductive material precursor 20 &

The conductive material precursor 20 was obtained in the same manner as in the production of the conductive material precursor 14 except that the coating solution of the ground layer 4 of the following composition was prepared and used instead of the coating of the ground layer 3. [

&Lt; Composition of coating of base layer 4 / amount per 1 m &lt; 2 &gt; of conductive material precursor &

&Quot; Production of conductive material precursor 21 &quot;

Except that 6 mg of an acrylic latex (Vinizole 1082, average particle diameter 0.10 m, manufactured by Didega Kasei Kogyo K.K.) was used as a solid content in place of the polycarbonate urethane polymer latex in the production of the coating solution for the ground layer 4, A conductive material precursor 21 was obtained in the same manner as the preparation of the material precursor 20.

&Quot; Preparation of conductive material precursor 22 &quot;

Except that 6 mg of polyester latex (PESRESIN A115GE manufactured by Takamatsu Yushi Co., Ltd., average particle diameter 0.05 탆) was used as a solid content in place of the polycarbonate-based urethane polymer latex, A conductive material precursor 22 was obtained in the same manner as the preparation of the material precursor 20.

&Quot; Preparation of Conductive Material Precursor 23 &

Except for using 6 mg of polyvinyl acetate latex (Vinizol 290 manufactured by DIGO KASEI KOGYO CO., LTD., Average particle diameter 0.5 mu m) as solid content in place of the polycarbonate-based urethane polymer latex, , The conductive material precursor 23 was obtained in the same manner as in the production of the conductive material precursor 20.

&Quot; Fabrication of conductive material precursor 24 &quot;

A conductive material precursor 24 was obtained in the same manner as in the production of the conductive material precursor 20 except that the polycarbonate-based urethane polymer latex was removed in the production of the coating solution for the ground layer 4. [

&Quot; Preparation of conductive material precursor 25 &quot;

A conductive material precursor 25 was obtained in the same manner as in the production of the conductive material precursor 20 except that the above-mentioned palladium sol was used in place of the palladium sulfide used in the production of the coating solution for the ground layer 4. [

&Lt; Production of conductive material precursor 26 &

A conductive material precursor 26 was obtained in the same manner as in the production of the conductive material precursor 14 except that the palladium sulfide sol was excluded in the preparation of the coating solution of the ground layer 3.

&Lt; Fabrication of conductive material &

Each of the conductive material precursors 14 to 26 obtained as described above was subjected to measurement of a mask image including a grid pattern image having a line width of 10 mu m (light projecting portion) and a line spacing of 300 mu m (light shielding portion) on the surface of the photosensitive resist layer (Ultrahigh-pressure mercury lamp) having a wavelength in the photosensitive region of the photosensitive resist layer was condensed, and parallel light exposure was performed through a collimator lens. Each of the conductive material precursors 14 to 26 after exposure used a 1 mass% sodium carbonate aqueous solution at a liquid temperature of 30 占 폚 as a developing solution and sprayed the photosensitive resist layer for 30 seconds by a shower method and developed to obtain a lattice pattern resist image. The exposure amount was set so that the line width of a region of the lattice pattern image portion which was not covered with the resist image (region where the base layer was exposed) was 10 占 퐉. The line width of the resist image portion was confirmed by a confocal microscope (Optelix C130 manufactured by Laser Tec Co., Ltd.).

In addition, for the conductive material precursor 26, a resist image was formed in the same manner as the above-described conductive material precursors 14 to 25, and then immersed in a 1 mass% palladium chloride solution for 2 minutes and then dried.

Next, the surface of each conductive material precursor having the resist image is cleaned with deionized water, and the deionized water is blown up by compressed air. Then, the above ammoniacal silver nitrate silver solution and the above reducing agent solution are applied by a double head spray gun, Was sprayed on the side having the resist image for 30 seconds at the same time for electroless silver plating to form a silver plating layer having a thickness of 0.25 占 퐉 on the base layer not covered with the resist image. Thereafter, it was washed with deionized water and air-dried. The injection amount of the two-head spray gun was 240 ml / min.

Next, a 5 mass% sodium hydroxide solution was sprayed for 60 seconds on the side of the respective conductive material precursors having a resist image to dissolve and remove the resist image, and after washing with water, the conductive materials 14 to 26 &Lt; / RTI &gt; In the obtained conductive material, a conductive pattern including a silver image in a lattice pattern with a line width of 10 mu m and a line spacing of 300 mu m was obtained.

&Lt; Measurement of sheet resistance value of conductive pattern &

The sheet resistance values of the lattice pattern portions of the obtained conductive materials 14 to 26 were measured according to JIS K7194 using a Loresta GP / ESP probe (manufactured by Daiichi Instruments Co., Ltd.). The results are shown in Table 2. In actual use, the sheet resistance value is preferably 50? /? Or less.

&Lt; Measurement of Total Light Transmittance of Conductive Pattern >

The total light transmittance of the lattice pattern portions of the obtained conductive materials 14 to 26 was measured using a double beam type haze computer (manufactured by Suga Shikeki Co., Ltd.). The results are shown in Table 2. Further, in the conductive material 26, the edge portion of the silver image was contaminated as if the resist image had been removed. In practical use, the total light transmittance is preferably 80% or more.

&Lt; Evaluation of adhesion property of conductive pattern &

12 mm wide × 5 cm of an adhesive tape (Sekisui Cellophane tape (tape standard JIS Z 1522) manufactured by Sekisui Kagaku Kogyo K.K.) was affixed to the grid pattern portions of the obtained conductive materials 14 to 26, The tape was slowly peeled off at a peeling angle of 60 占 and the silver image of the lattice pattern portion was observed with a confocal microscope (Optelix C130 manufactured by Laser Tec Corporation). &Amp; cir &amp; was evaluated as &amp; cir &amp;, and &amp; cir &amp; The results are shown in Table 2. In addition, when the result of evaluation is?, It is necessary to pay attention to handling at the time of joining with other members, but actual use is possible.

From the above results, it can be seen that even if the conductive pattern is a fine pattern having a line width of 25 mu m or less, it is possible to form a conductive pattern having a sufficient total light transmittance and having good conductivity, It can be seen that a conductive material precursor having a specific surface area is obtained. Further, according to the present invention, it is possible to form a conductive pattern having good conductivity even when electroless plating time is short, and it is possible to produce a conductive material with high productivity.

Claims (10)

A base layer containing a metal sulfide, and a photosensitive resist layer are laminated in this order on a support, a crosslinking agent selected from a water-soluble polymer compound selected from gelatin, a gelatin derivative and polyvinyl alcohol, a polyaldehyde compound and a compound having an active halogen, And a conductive material precursor. The conductive material precursor according to claim 1, wherein the water-soluble polymer compound is polyvinyl alcohol. The conductive material precursor according to claim 1 or 2, wherein the cross-linking agent is a polyvalent aldehyde compound. The conductive material precursor according to claim 1 or 2, wherein the ground layer further comprises a urethane polymer latex. The conductive material precursor according to claim 1 or 2, wherein the photosensitive resist layer is a positive photosensitive resist layer. A base layer containing a metal sulfide, and a photosensitive resist layer are laminated in this order on a support, a crosslinking agent selected from a water-soluble polymer compound selected from gelatin, a gelatin derivative and polyvinyl alcohol, a polyaldehyde compound and a compound having an active halogen, A step of exposing and developing the surface of the photosensitive resist layer of the conductive material precursor having an arbitrary pattern to form a resist image of the exposed pattern,
A step of performing electroless plating on a surface on which a resist image is formed to form a conductive pattern on a base layer not covered with the resist image,
And then removing the resist image. The method for producing a conductive material according to claim 6, wherein the water-soluble polymer compound is polyvinyl alcohol. The method for producing a conductive material according to claim 6 or 7, wherein the crosslinking agent is a polyaldehyde compound. The method of producing a conductive material according to claim 6 or 7, wherein the ground layer further comprises a urethane polymer latex. The method for producing a conductive material according to claim 6 or 7, wherein the photosensitive resist layer is a positive photosensitive resist layer.