KR101751695B1 - Slurry composition for polishing - Google Patents

Abstract

The present invention relates to a polishing slurry composition, comprising: a slurry composition comprising a basic solution-treated abrasive particle and a dispersant according to an embodiment of the present invention; And an additive composition comprising polyacrylic acid and a nonionic polymer. The slurry composition for polishing according to the present invention contains basic solution-treated abrasive grains so that square-shaped abrasive grains are formed into a spherical shape to suppress aggregation of abrasive grains to increase dispersibility, ensure a high level of polishing speed, , It is possible to reduce the amount of dishing occurring depending on the pattern density and to selectively control polishing in different film qualities of the nitride film, the oxide film and the poly film.

Description

Technical Field [0001] The present invention relates to a slurry composition for slurry,

The present invention relates to a polishing slurry composition.

The shallow trench isolation chemical mechanical polishing (STI CMP) process, which is one of the device isolation methods during the semiconductor manufacturing process, becomes more and more integrated as the devices become more diverse and highly integrated, As a process, it is emerging as a new technology that can solve the Bird's Beak phenomenon problem in LOCOS (Local Oxidation of Silicon) process. In the STI CMP process, as the minimum line width of the metal becomes increasingly strict, the width of the trench decreases and the thickness of the nitride film to be deposited becomes thin. Therefore, a slurry composition having a high polishing selectivity ratio of the oxide film and the poly film is required for the CMP process margin.

Abrasive particles currently used are produced by a high-temperature solid-phase synthesis method which is difficult to control particle size and dispersion, and have a problem of generating micro-scratches in the CMP process because the particle size is large and the surface state is angled. Further, in order to configure the selectivity ratio of the nitride film to the oxide film by applying the slurry composition produced by the solid phase method, a high selectivity ratio can be realized by adding an additive composition. This additive composition has a problem in that dispersion stability is lowered when it is mixed with a slurry composition, and micro-scratch is generated due to generation of agglomeration of particles, and there is a problem in that the polishing selectivity ratio of the poly membrane to the oxide film is low. It is impossible to use different polishing equipment according to each process, and the additive composition supplying device should be used separately.

Therefore, it is required to develop a method capable of suppressing dishing and scratch while simultaneously realizing a high nitride film selection ratio and a poly film selection ratio with one additive composition.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and an object of the present invention is to provide a nitride film or a polyimide film which can realize a high polishing selectivity relative to an oxide film, The present invention provides an abrasive slurry composition which is excellent in abrasion resistance.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to one embodiment of the present invention, a slurry composition comprising a basic solution-treated abrasive particle and a dispersant; And an additive composition comprising a polyacrylic acid and a nonionic polymer.

The basic solution-treated abrasive particles may be abrasive particles formed in a spherical shape by a basic substance.

Wherein the basic solution is selected from the group consisting of KNO ₃ , CH ₃ COOK, K ₂ SO ₄ , KCl, KOH, KF, NaOH, NaF, Na ₂ O, CH ₃ COONa, Na ₂ SO ₄ , C ₅ H ₅ N, NaOCl, K ₂ C ₂ O _{4 ,} propylamine, butylamine, diethylamine, dipropylamine, dibutylamine _, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, 2-dimethylamino- 1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2- Diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1- (dimethylamino) 2-propanol, N-methyldiethanolamine, N-propyldiethanolamine , N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethanolamine, Nt-butylethanolamine, N-cydecylhexyldiethanolamine, 2- , 2-diethylaminoethanol, 2-dipropyl Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl-2-methylaminoethanol, 2- (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2- Tris (hydroxymethyl) aminomethane, and tri-isopropanolamine.

The basic solution-treated abrasive particles may be abrasive particles formed by mixing and calcining a metal precursor, a basic solution, an organic solvent, and water.

The BET specific surface area of the abrasive grains before milling may be 7 m ² / G or less.

The primary particle size of the basic solution-treated abrasive particles may be 40 nm to 100 nm and the secondary particle size may be 60 nm to 150 nm.

Wherein the basic solution-treated abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, and the metal oxide is selected from the group consisting of ceria, silica, Zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.

The basic solution-treated abrasive grains may be 1 wt% to 10 wt% of the abrasive slurry composition.

The dispersant may be at least one selected from the group consisting of polyacrylic acid, polyacrylic acid ammonium salt, polymethacrylic acid, polymethacrylic acid ammonium salt, polyacrylic maleic acid, carboxylic acid, carboxylic acid salt, sulfenic ester, sulphonic ester salt, sulphonic acid, And an anionic polymer containing at least one selected from the group consisting of esters and phosphonic ester salts.

The dispersant may include polyacrylic acid neutralized with a compound containing a hydroxyl group.

The dispersant may be 0.01 wt% to 10 wt% of the polishing slurry composition.

The dispersant may be bonded to the basic solution-treated abrasive grains.

The dispersant may be adsorbed on the basic solution-treated abrasive grains in an amount of 5 to 20 parts by weight based on the basic solution-treated abrasive grains.

The polyacrylic acid may be 0.05% by weight to 5% by weight of the polishing slurry composition.

The nonionic polymer is at least one selected from the group consisting of polyethylene glycol (PEG), ethylene glycol (EG), polyvinyl alcohol (PVA), glycerin, polypropylene glycol (PPG) and polyvinylpyrrolidone Or an anionic polymer containing one of the anionic polymers.

The nonionic polymer may be 0.0005 to 0.005% by weight of the polishing slurry composition.

The pH of the polishing slurry composition may be 6 to 9.

In the shallow trench isolation (STI) process of the semiconductor device, the polishing slurry composition may have a dishing generation amount of 300 A or less in the oxide film region.

The polishing selectivity ratio of the silicon nitride film to the oxide film is 20: 1 to 50: 1, and the polishing selectivity ratio of the silicon poly film to the oxide film is 100: 1 to 320: 1.

The slurry composition for polishing according to the present invention contains basic solution-treated abrasive grains so that square-shaped abrasive grains are spherically shaped to increase the dispersibility of the abrasive grains, ensure a high level of polishing speed, , The amount of dishing generated according to the pattern density can be reduced, and polishing control can be selectively performed in different film qualities of the nitride film, the oxide film and the poly film.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a patterned wafer used for polishing using the polishing slurry composition of the comparative examples and examples of the present invention. Fig.
2 is a graph showing a line profile for confirming the stopping effect of nitriding polishing after 20 seconds polishing and 40 seconds polishing of a patterned wafer using a polishing slurry composition according to an embodiment of the present invention.
FIG. 3 is a graph showing a space profile for confirming the dishing of the patterned wafer before polishing, after 20 seconds of polishing, and after 40 seconds of polishing using the polishing slurry composition according to the embodiment of the present invention.
4 is a graph showing the polishing rate of the nitride film and the polishing rate of the oxide film after polishing the pattern wafer for 20 seconds and 40 seconds using the polishing slurry composition according to the embodiment of the present invention.
5 is a graph showing a line profile for confirming the effect of stopping polishing of a nitride film before polishing, 20-second polishing and 40-second polishing of a patterned wafer using the polishing slurry composition according to the comparative example of the present invention.
FIG. 6 is a graph showing a space profile for confirming the dishing of the patterned wafer before polishing, after polishing for 20 seconds, and after polishing for 40 seconds by using the polishing slurry composition according to the comparative example of the present invention.
7 is a graph showing the polishing rate of the nitride film and the polishing rate of the oxide film after polishing the patterned wafer for 20 seconds and 40 seconds using the polishing slurry composition according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

Hereinafter, the polishing slurry composition of the present invention will be specifically described with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.

According to one embodiment of the present invention, a slurry composition comprising a basic solution-treated abrasive particle and a dispersant; And an additive composition comprising a polyacrylic acid and a nonionic polymer.

The basic solution-treated abrasive grains are treated with a basic solution in the process of manufacturing abrasive grains, and may be formed in spherical shape by cutting out the angular shape of the abrasive grains surface by a treatment with a basic substance. Therefore, the polishing slurry composition according to the present invention can achieve high polishing speed to ensure efficient polishing, while suppressing aggregation of abrasive grains to increase dispersibility and reduce the amount of dishing caused by pattern density, , Oxide film, and poly film, respectively.

The basic solution-treated abrasive particles may be abrasive particles formed by mixing and calcining a metal precursor, a basic solution, an organic solvent, and water.

The metal precursor may be at least one selected from the group consisting of a metal carbide, a metal nitride, a metal oxide, a metal sulfide, an ammonium metal nitrate, a metal oxide, a metal hydroxide, and a salt thereof, , At least one selected from the group consisting of cerium, silicon, zirconium, aluminum, titanium, barium titanium, germanium, manganese, and magnesium. When the metal precursor is a cerium precursor, it may include at least one selected from the group consisting of cerium carbonate, cerium nitrate, cerium nitrate, cerium sulfate, cerium ammonium nitrate, cerium oxide, cerium hydroxide, and salts thereof.

Wherein the basic solution is selected from the group consisting of KNO ₃ , CH ₃ COOK, K ₂ SO ₄ , KCl, KOH, KF, NaOH, NaF, Na ₂ O, CH ₃ COONa, Na ₂ SO ₄ , C ₅ H ₅ N, NaOCl, K ₂ C ₂ O _{4 ,} propylamine, butylamine, diethylamine, dipropylamine, dibutylamine _, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, 2-dimethylamino- 1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2- Diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1- (dimethylamino) 2-propanol, N-methyldiethanolamine, N-propyldiethanolamine , N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethanolamine, Nt-butylethanolamine, N-cydecylhexyldiethanolamine, 2- , 2-diethylaminoethanol, 2-dipropyl Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl-2-methylaminoethanol, 2- (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2- Tris (hydroxymethyl) aminomethane, and tri-isopropanolamine.

The organic solvent may be at least one selected from the group consisting of ethylene glycol (EG), polyethyleneglycol (PEG), methyl alcohol, isopropyl alcohol, methoxyethanol, acetone, glycerin, toluene, methyl ethyl ketone, ethyl acetate, cyclohexane, Carbitol acetate, and carbitol acetate. The addition of the organic solvent has the effect of coating the abrasive particles and improving dispersibility.

The remaining components of the mixture may be water, preferably ultra pure water.

The calcination of the mixture may be performed at room temperature to 1,000 ° C. The calcination can be maintained at the desired temperature, for example, for 0.1 to 10 hours, while maintaining an oxidizing atmosphere in which air is sufficiently supplied. In some cases, the calcination step may be performed by adjusting the partial pressure of oxygen. Preferably, the calcination process can be performed at a temperature of 600 ° C to 900 ° C for about 1 hour. Cerium carbonate may be formed of cerium oxide through the calcination process. The size and shape of the desired particles can be controlled through temperature control in the calcination process. For example, square-shaped abrasive grains can be produced when the calcination temperature is 500 ° C or less and the calcination time is 1 hour or less. When the calcination temperature is more than 500 ° C and the calcination time is more than 1 hour, spherical abrasive grains can be produced. In the case of spherical abrasive grains, not only dishing but also defects and scratches can be more greatly reduced.

The BET specific surface area before milling of the basic solution-treated abrasive grains may be 7 m ² / G or less, and the BET specific surface area of the abrasive grains after milling may be increased to 10 m ² / G or more. When the BET specific surface area of the abrasive grains is out of the above range, surface defects such as scratches and dishing may occur on the surface of the film to be polished, and the dispersibility is deteriorated.

The primary particle size of the basic solution-treated abrasive particles may be 40 nm to 100 nm and the secondary particle size may be 60 nm to 150 nm. When the abrasive grains have an average primary particle size of less than 40 nm, there is a problem that the polishing rate is lowered. In order to obtain the uniformity of the particles, the slurry composition should be 100 nm or less. When the average particle size of the secondary particles is less than 60 nm, there is a problem that the polishing rate for the size of the abrasive grains is decreased and the selection is difficult to implement. When the average particle size is more than 150 nm, Rate, and selection ratio of the sample.

Wherein the basic solution-treated abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, and the metal oxide is selected from the group consisting of ceria, silica, Zirconia, alumina, titania, barium titania, germania, manganese, and magnesia.

The basic solution-treated abrasive grains may be 1 wt% to 10 wt% of the abrasive slurry composition. When the content of the abrasive grains in the polishing slurry composition is less than 1% by weight, there is a possibility that the polishing target film, for example, the nitride film can not be sufficiently polished during polishing and the planarization rate may be lowered. If it is more than% by weight, there is a fear of causing surface defects such as defects and scratches.

The dispersant may be at least one selected from the group consisting of polyacrylic acid, polyacrylic acid ammonium salt, polymethacrylic acid, polymethacrylic acid ammonium salt, polyacrylic maleic acid, carboxylic acid, carboxylic acid salt, sulfenic ester, sulphonic ester salt, sulphonic acid, And an anionic polymer containing at least one selected from the group consisting of esters and phosphonic ester salts, and may preferably contain polyacrylic acid neutralized with a compound containing a hydroxyl group. The compound containing a hydroxyl group may be a metal hydroxide or ammonium hydroxide.

The dispersant may be 0.01% by weight to 10% by weight, preferably 0.1% by weight to 5% by weight in the polishing slurry composition. If the amount of the dispersant is less than 0.01 wt%, the nitride film protective performance is lowered to lower the selectivity and the dispersibility becomes insufficient. When the dispersant is more than 10 wt%, the reaction occurs in the polishing slurry composition, Which causes coagulation phenomenon and causes defects or scratches.

The dispersant may be bonded to the basic solution-treated abrasive grains.

The dispersant may be adsorbed on the basic solution-treated abrasive grains in an amount of 5 to 20 parts by weight based on the basic solution-treated abrasive grains. As the content of the dispersant increases, the amount of the dispersant adsorbed on the abrasive particles may increase.

The polyacrylic acid exhibits an effect of reducing dishing, and may be 0.05% by weight to 5% by weight of the polishing slurry composition. If the amount of the polyacrylic acid is less than 0.05 wt%, the performance of suppressing dishing is deteriorated. If the amount of the polyacrylic acid is more than 5 wt%, the reaction occurs in the polishing slurry composition to cause coagulation phenomenon, have.

The nonionic polymer is added to further improve the polishing rate of the oxide film and the nitride film with respect to the polishing rate of the poly membrane and to uniformly and stably disperse the abrasive grains in the polishing slurry composition, At least one selected from the group consisting of polyethylene glycol (PEG), ethylene glycol (EG), polyvinyl alcohol (PVA), glycerin, polypropylene glycol (PPG) and polyvinylpyrrolidone (PVP) And an anionic polymer containing an anionic polymer.

The nonionic polymer may be 0.0005 to 0.005% by weight of the polishing slurry composition. When the amount of the nonionic polymer is less than 0.0005 wt%, the dispersibility of the nonionic polymer is low and the precipitation progresses quickly. Therefore, the polishing slurry composition may be precipitated during the transfer of the polishing slurry composition, There is a problem that the layer serving as a kind of cushion is formed around the abrasive grains and that the surface of the abrasive grains is difficult to be brought into contact with the film to be polished to lower the polishing rate and the dispersion stability of the polishing slurry composition is lowered and micro- have.

The nonionic surfactant may have a molecular weight of 400 to 5,000, but is not limited thereto. If the molecular weight of the nonionic surfactant is less than 400, the performance of the polyimide protective film deteriorates to lower the polishing selectivity. If the molecular weight exceeds 5,000, excessive polishing of the polishing profile may occur.

In the shallow trench isolation (STI) process of a semiconductor device, the polishing slurry composition may have an amount of dishing occurring in the oxide film region of 300 angstroms or less, preferably 100 angstroms or less.

The polishing selectivity ratio of the silicon nitride film to the oxide film is 20: 1 to 50: 1, and the polishing selectivity ratio of the silicon poly film to the oxide film is 100: 1 to 320: 1. If the polishing slurry composition exhibits an excessively high polishing selectivity ratio, the amount of dishing may be increased.

The polishing slurry composition may further comprise at least one polishing additive selected from the group consisting of an ammonium salt and a pH adjusting agent.

Wherein the ammonium salt is selected from the group consisting of ammonium nitrate, ammonium formate, ammonium citrate, ammonium acetate, ammonium benzoate, ammonium bromide, ammonium carbonate, ammonium chloride, ammonium chromate, ammonium dichromate, ammonium oxalate, ammonium sulfamate, At least one selected from the group consisting of ammonium sulfite, ammonium tartrate, ammonium tetrafluoroborate, ammonium thiocyanate, ammonium thiosulfate, and ammonium ascorbate may be included.

The pH adjusting agent may be, for example, an inorganic acid or an inorganic acid salt containing at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid and salts thereof; And organic acids such as formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, citric acid, adipic acid, acetic acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, An organic acid or an organic acid salt containing at least one selected from the group consisting of glycolic acid, lactic acid, aspartic acid, tartaric acid and salts thereof.

The pH of the polishing slurry composition may be in the range of 6 to 9, and the dispersion stability and polishing performance of the abrasive grains may be improved, and the pH may be rapidly changed (pH shock) Precipitation or agglomeration of the abrasive particles can be prevented, thereby minimizing the occurrence of micro-scratches that can be caused in the polishing process. When the pH of the slurry composition for polishing is increased, a large amount of hydroxide ions (OH < ^- & gt ^; ) exist around the abrasive grains, and the zeta potential value of the abrasive grains decreases. When the zeta potential value is decreased, dispersion stability is lowered, micro scratches may occur due to precipitation or aggregation of abrasive grains, or the polishing rate for the oxide film may be lowered. Accordingly, it is preferable to maintain the pH of the polishing slurry composition at an appropriate value.

On the other hand, the present invention relates to a two-component type slurry composition comprising a basic solution-treated abrasive particle and a dispersant, and an additive composition comprising a polyacrylic acid and a nonionic polymer, The pH of the slurry composition is 7 to 10, the pH of the additive composition is 2 to 5, and the pH of the polishing slurry composition when mixed can be 6 to 9.

The slurry composition for polishing according to the present invention contains basic solution-treated abrasive grains, so that square-shaped abrasive grains are manufactured into a spherical shape, thereby ensuring a high level of polishing speed to enable effective polishing, while enhancing the dispersibility of abrasive grains , The amount of dishing generated according to the pattern density can be reduced, and polishing control can be selectively performed in different film qualities of the nitride film, the oxide film and the poly film.

Hereinafter, the present invention will be described in detail with reference to the following examples and comparative examples. However, the technical idea of the present invention is not limited or limited thereto.

[Example]

10 g of cerium carbonate as a cerium precursor material, 10 g of KNO ₃ as a basic substance, 400 g of polyethylene glycol as an organic solvent and 600 g of water were placed in a glass beaker and stirred and rotated at 200 RPM to obtain a mixture. At 600 캜 to 900 캜 under atmospheric pressure for 5 hours to obtain ceria particles as basic solution-treated abrasive grains.

The ceria abrasive grains were prepared by adding ammonia neutralized polyacrylic acid in an amount of 5 wt% based on 100 wt% of the polishing slurry composition and 15 wt% based on the ceria abrasive grains as a dispersant.

0.2% by weight of polyacrylic acid and 0.1% by weight of polyethylene glycol as a nonionic polymer were added based on 100% by weight of the slurry composition for polishing, and the mixture was titrated to pH 3 to 4 using ammonia to prepare an additive composition.

The prepared slurry composition and the additive composition were mixed to prepare a polishing slurry composition having a pH of 6 to 7.

[Comparative Example]

The slurry composition was prepared under the same conditions as those of the example except that the ceria particles were not subjected to a basic solution treatment. The slurry composition for polishing was prepared using the additive composition for the STI process which is generally used.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a patterned wafer used for polishing using the polishing slurry composition of the examples and comparative examples of the present invention. Fig. Using the polishing slurry composition of the examples and comparative examples, the wafer of FIG. 1 was polished under the following polishing conditions to confirm the polishing stopper performance after removing the oxide film from the pattern.

[Polishing condition]

1. Grinder: Elastic ST (300 mm, manufactured by KCTECH)

2. Pad: IC-1000 (Rohm & Hass)

3. Polishing time: 60 sec

4. Head RPM (Head RPM): 60 RPM

5. Spindle RPM: 24 RPM

6. Head pressure: 4 psi

7. R-ring pressure: 7 psi

8. Flow rate: 200 ml / min

Table 1 below shows oxide film polishing rate, nitride film polishing rate, polishing film polishing rate, dishing occurrence amount, and scratch generation amount after pattern wafer polishing using the polishing slurry composition according to the comparative example and examples of the present invention.

Comparative Example Example Oxide film polishing rate
(Å / min) 1014 1860 Nitride film polishing rate
(Å / min) 70 60 Polymembrane polishing rate
(Å / min) 110 10 Dishing
(A) 150 60 scratch
(ea) 108 11

As can be seen from Table 1, in the embodiment of the present invention, selective polishing is possible in each of different film qualities, and the amount of occurrence of dishing and the amount of scratches are remarkably reduced compared to the comparative example.

2 is a graph showing a line profile for confirming the effect of stopping polishing of a nitride film before polishing, 20 seconds polishing, and 40 seconds polishing of a pattern wafer using the polishing slurry composition according to an embodiment of the present invention, FIG. 3 is a graph showing a space profile for confirming dishing of the patterned wafer before polishing, after polishing for 20 seconds, and after polishing for 40 seconds using the polishing slurry composition according to the embodiment of the present invention, and FIG. 4 FIG. 5 is a graph showing the polishing rate of the nitride film and the polishing rate of the oxide film after polishing the pattern wafer for 20 seconds and 40 seconds using the polishing slurry composition according to the embodiment of the present invention. A line profile for confirming the effect of stopping polishing of a nitride film before polishing of a patterned wafer, polishing for 20 seconds, polishing after a polishing time of 40 seconds, and the like , FIG. 6 is a graph showing a space profile for confirming the dishing of the patterned wafer before polishing, 20 seconds polishing, and 40 seconds polishing using the polishing slurry composition according to the comparative example of the present invention, and FIG. Is a graph showing the polishing rate of the nitride film and the polishing rate of the oxide film after polishing the patterned wafer for 20 seconds and 40 seconds using the polishing slurry composition according to the embodiment of the present invention. As can be seen from the graphs of FIG. 2 to FIG. 7, when the polishing slurry composition of the embodiment of the present invention was used, the polishing stop function was confirmed in the nitride film serving as the polishing stopper film in the pattern, And the edge (Edge), and it was confirmed that the dishing occurred in the remaining amount of the pattern.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the equivalents of the appended claims, as well as the appended claims.

Claims (19)

A slurry composition comprising a basic solution-treated abrasive particle and a dispersant; And
An additive composition comprising polyacrylic acid and a nonionic polymer;
/ RTI >
The BET specific surface area before milling of the basic solution-treated abrasive grains is 7 m ² / G or less,
The primary particle size of the basic solution-treated abrasive particles is 40 nm to 100 nm, the secondary particle size is 60 nm to 150 nm,
In a shallow trench isolation (STI) process of a semiconductor device, the amount of dishing generated in the oxide film region is 300 A,
Wherein the polishing target film comprises an oxide film, a nitride film and a poly film, and the polishing stop film is a nitride film.
Abrasive slurry composition.
The method according to claim 1,
Wherein the basic solution-treated abrasive particles are abrasive particles formed in a spherical shape by a basic substance.
The method according to claim 1,
Wherein the basic solution is selected from the group consisting of KNO ₃ , CH ₃ COOK, K ₂ SO ₄ , KCl, KOH, KF, NaOH, NaF, Na ₂ O, CH ₃ COONa, Na ₂ SO ₄ , C ₅ H ₅ N, NaOCl, K ₂ C ₂ O _{4 ,} propylamine, butylamine, diethylamine, dipropylamine, dibutylamine _, triethylamine, tributylamine, monoethanolamine, diethanolamine, triethanolamine, 2-dimethylamino- 1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2- Diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1- (dimethylamino) 2-propanol, N-methyldiethanolamine, N-propyldiethanolamine , N-isopropyldiethanolamine, N- (2-methylpropyl) diethanolamine, N-butyldiethanolamine, Nt-butylethanolamine, N-cydecylhexyldiethanolamine, 2- , 2-diethylaminoethanol, 2-dipropyl Amino-2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl-2-methylaminoethanol, 2- (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2- Tris (hydroxymethyl) aminomethane, and triisopropanolamine. ≪ Desc / Clms Page number 24 >
The method according to claim 1,
The basic solution-
Wherein the abrasive grains are abrasive grains formed by mixing and calcining a metal precursor, a basic solution, an organic solvent, and water.
delete delete The method according to claim 1,
The basic solution-
At least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of ceria, silica, zirconia, alumina, titania, barium titania, germania, mangania, and magnesia.
Abrasive slurry composition.
The method according to claim 1,
Wherein the basic solution-treated abrasive grains are 1 wt% to 10 wt% of the abrasive slurry composition.
The method according to claim 1,
The dispersing agent may be at least one selected from the group consisting of polyacrylic acid, polyacrylic acid ammonium salt, polymethacrylic acid, polymethacrylic acid ammonium salt, polyacrylic maleic acid, carboxylic acid, carboxylate, sulphonic ester, sulphonic ester salt, sulphonic acid, Wherein the anionic polymer comprises at least one selected from the group consisting of an ester and a phosphonic ester salt.
The method according to claim 1,
Wherein the dispersant comprises a polyacrylic acid neutralized with a compound containing a hydroxyl group.
The method according to claim 1,
Wherein the dispersant is 0.01 wt% to 10 wt% of the polishing slurry composition.
The method according to claim 1,
Wherein the dispersant is bonded to the basic solution-treated abrasive grains.
The method according to claim 1,
Wherein the dispersant is adsorbed on the basic solution-treated abrasive grains in an amount of 5 to 20 parts by weight based on the basic solution-treated abrasive grains.
The method according to claim 1,
Wherein the polyacrylic acid is 0.05% by weight to 5% by weight of the polishing slurry composition.
The method according to claim 1,
The nonionic polymer is at least one selected from the group consisting of polyethylene glycol (PEG), ethylene glycol (EG), polyvinyl alcohol (PVA), glycerin, polypropylene glycol (PPG) and polyvinylpyrrolidone Wherein the anionic polymer comprises an anionic polymer.
The method according to claim 1,
Wherein the nonionic polymer is 0.0005 to 0.005% by weight of the polishing slurry composition.
The method according to claim 1,
Wherein the pH of the polishing slurry composition is from 6 to 9.
delete delete

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