KR101746280B1 - Optical Gas Sensor with the Improvement of Chemical Resistance and Anti-scattering of lights - Google Patents

Optical Gas Sensor with the Improvement of Chemical Resistance and Anti-scattering of lights Download PDF

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KR101746280B1
KR101746280B1 KR1020150120890A KR20150120890A KR101746280B1 KR 101746280 B1 KR101746280 B1 KR 101746280B1 KR 1020150120890 A KR1020150120890 A KR 1020150120890A KR 20150120890 A KR20150120890 A KR 20150120890A KR 101746280 B1 KR101746280 B1 KR 101746280B1
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semi
elliptic
optical
mirror
focus
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KR20170026742A (en
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이승환
이상호
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한국교통대학교산학협력단
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0093—Means for protecting the light guide
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/062—LED's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/08—Optical fibres; light guides

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  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The present invention relates to an optical gas sensor for preventing light scattering and improving chemical resistance. More specifically, the present invention relates to an optical structure for manufacturing an optical gas sensor, and more particularly to a method of manufacturing an optical gas sensor, which is capable of increasing the intensity of light radiated from a light source without using a separate condenser lens, The present invention is intended to manufacture an infrared gas sensor for improving the output of a sensor by effectively reducing the light scattering due to an increase in humidity and correcting the sensor output. Accordingly, the present invention provides an infrared gas sensor having improved characteristics by increasing the efficiency of condensing light of a specific wavelength range having a relatively small light intensity, stabilizing output by preventing scattering of an infrared light source, reducing response time, To a structure that can be effectively applied to the structure.

Description

TECHNICAL FIELD [0001] The present invention relates to an optical gas sensor for preventing light scattering and improving chemical resistance, and an optical gas sensor using the optical waveguide,

The present invention relates to an optical gas sensor for preventing light scattering and improving chemical resistance. More specifically, the present invention relates to an optical structure for manufacturing an optical gas sensor, and more particularly, to a method of manufacturing an optical gas sensor that increases intensity of light emitted from a light source without using a separate condenser lens in an optical sensor, To improve the output of the sensor by reducing the light scattering due to the increase of the humidity as well as to prevent the contamination of the inside of the optical structure, and to realize the infrared gas sensor effectively. Accordingly, the present invention provides an infrared gas sensor having improved characteristics by increasing the efficiency of condensing light of a specific wavelength range having a relatively small light intensity, stabilizing output by preventing scattering of an infrared light source, reducing response time, And can be effectively applied to the structure.

The present invention aims to propose an improvement plan of existing patents by examining the technical features and merits of the patents presented before the invention.

As described in the following, in the conventional domestic patent No. 10-0694635 (hereinafter referred to as prior art 1), in the 10-0732708 and 10-1088360 (hereinafter referred to as the prior art 2) and in the domestic patent publication 10-2013-0082482 (Hereinafter referred to as " Prior Art 3 ") basically takes the shape of an elliptical structure.

In addition, Korean Patent No. 10-0959611 (hereinafter, referred to as prior art 4) and 10-1108495 (hereinafter referred to as prior art 5) include a condenser lens at the front end of the sensor section.

On the other hand, Korean Patent No. 10-1108544 (hereinafter referred to as prior art 6) and No. 10-0944273 (hereinafter referred to as prior art 7) have a reference sensor or a reference light source for improving the reliability of the sensor characteristic.

Therefore, if we propose the advantages and disadvantages of these patents and registered patents, and propose a structure that can complement and improve them through empirically proven experimental results, it would be easy to manufacture more effective optical sensors. The main points of the patents are presented and the utility is judged.

First, Fig. 1 shows a plan view of a nondispersed infrared gas sensor 1 provided with an elliptical dome-type reflector according to the prior art 1. As shown in Fig. 1, a non-dispersive infrared gas sensor 1 provided with an elliptical dome-shaped reflector according to the prior art 1 includes a printed circuit board 2, an elliptical dome-shaped reflector 3, a light source 4, It is understood that the optical sensor is composed of the upper plate 5, the optical sensor 6, the light source fixing hole 7, the cleaning hole 8, the ellipsoidal reflector 9, the optical sensor coupling portion 10, .

In this prior art 1, after the infrared rays radiated from the light source 4 provided at the first focus of the elliptical dome-shaped reflector 3 are reflected by the elliptical dome-shaped reflector 3, And is incident on the optical sensor 6 provided at the focal point of the elliptical reflecting mirror 9, the number of times of reflection by the reflecting mirror is minimized to prevent light loss, Although the light emitted from the light source 4 is incident on the photosensor 6 without loss, it is advantageous that the photosensor 6 can maximize the amount of light that can be used for measuring the gas. However, the elliptical domed reflector 3) is utilized and the light reflected from the lower surface is directed to the sensor portion through the reflector shown in the lower plate of the sensor portion. Such a structure uses only a luminous flux of less than half of the irradiation light. In the case of light irradiated and reflected on the lower plane, it is preferable to irradiate the light to the sensor part effectively by the filter attached to the optical sensor part, It is difficult to be irradiated to the infrared detecting element located at the bottom of the filter. In this structure, when the temperature changes in a state where the external state is high temperature and high humidity, the steam is condensed on the inner surface of the optical structure, and the output required by the scattering of infrared rays radiated from the light source is lowered, Or require additional calibration work.

2 shows an optical waveguide having a plurality of independent optical paths according to the prior art 2 and an NDIR gas sensor using the optical waveguide. 2, an optical waveguide having a plurality of independent optical paths and an NDIR gas sensor using the optical waveguide according to the related art 2 includes an optical waveguide 20, a first elliptic mirror 21, a first ellipse 21a, The first focus 21b, the second ellipse 22, the second ellipse 22a, the second focus 22b, the light source 23, the photodetector 24, the first optical detection window 25, 2 light detection windows 26, and the like.

2, the light emitted from the common light source has a structure that reaches the optical sensor portion on the right side through the elliptical reflectors 21 and 22, which share a common focal point but are different from each other. Or more optical sensors. This structure has the advantage that it is easy to fabricate a small structure and can concentrate without additional lens. However, the amount of light reaching two sensors can focus only a maximum of 1/4 of light in structure, and 3 Dimensional optical structure and the difficulty in fabricating the structures irradiated to the field of view (FOV) of existing optical sensors (infrared thermopiles, bolometers or PIR sensors).

3 is a conceptual diagram of an optical waveguide according to Prior Art 3. In FIG. The structure shown in Fig. 3 shows two optical surfaces parallel to each other and opposed to each other (the first optical fiber 31 and the second optical fiber 32). As shown in Fig. 3, The light is converged in the vicinity of the second focus using only the first and second light sources 31 and 32. According to the shape and arrangement method of the paraboloid, it is possible to perform measurement using two or more optical sensors. As shown in JS Park and SH Yi's Sensors and Materials (2011 paper), it can be said that the condensation pattern has a disadvantage that it can not be said to be efficient light because it shows a shape that is not circular.

4 is an exploded perspective view of a non-dispersion infrared gas analysis apparatus having an intensive lens according to Prior Art 4. 4, the nondispersive infrared gas analyzer 40 having the collecting lens includes a case 41, a light emitting portion 42, a scattering portion 43, a light receiving portion 44, an injection tube 45 A fixing unit 46, an infrared light source 47, a light source fixing plate 48, a light detecting unit substrate 49, an infrared sensor 50, a lens unit 51, a PCB 52, a fin hole 53, Hole 54, through-hole 55, membrane 56, and the like.

As shown in FIG. 4, by including the lens portion 51 for condensing light, the light is efficiently used for the infrared sensor 50, thereby improving the output of the sensor. However, the optical path is relatively short, and the manufacturing cost is increased due to the mounting of the additional lens.

5 shows a cross-sectional view of a nondispersive infrared gas sensor 60 (optical structure) according to the related art 5. 5, the conventional art 5 includes a light source lamp 61, an elliptic reflector 62, a ventilation hole 63, an infrared ray sensor 64, and the like.

5 adopts a lens (an elliptical reflector 62 having an array pattern of a specific type of nano- and micrometer-size or more formed on its surface) in front of an infrared sensor 64 (uncooled bolometer sensor) However, as in the case of the prior art 4, not only the cost increases due to the use of additional parts but also the reflection from the upper, lower, right and left wall surfaces of the optical structure 60 for increasing the optical path It has the disadvantage that the amount of light reaching the optical sensor portion 64 is relatively small by adopting the structure of the reflector 62 to artificially form.

6 shows an air flow chart of the non-dispersive infrared gas measuring apparatus according to the prior art 6. Fig. 6, the nondispersive infrared gas measuring apparatus 70 according to the prior art 6 includes an infrared lamp 71, a reflector 72, an optical sensor 73, an optical waveguide 74, a second air inlet 74, The air outlet 75, the air outlet 76, the first air inlet 77, and the like.

7 shows a cross-sectional view of a non-dispersive infrared gas sensor according to the prior art 7. In FIG. 7, the non-dispersive infrared gas sensor according to Prior Art 7 includes an optical cavity 80, a right rear reflector 81, a left rear reflector 82, a left reflector 83, a left front reflector 84 A right front reflector 85, a light source fixing portion 86, an optical sensor fixing portion 87, a gas measuring infrared light source portion 91, a signal compensating infrared light source portion 92, a light sensor portion 93, As shown in FIG.

As shown in Fig. 6, in the prior art 6, a reference sensor is provided for improving reliability, and in the prior art 7, a reference light source is provided.

Specifically, the advantage of the prior art 6 shown in FIG. 6 is that the same light source is used but two infrared sensors are used. One is a reference sensor that compares and evaluates the output state of the reference sensor with the change of the light source with time, And the output path of the sensor is shortened due to the absence of a special structure capable of condensing the infrared rays incident on the first end of the infrared sensor, Which has a structural disadvantage that it has a small characteristic.

The advantage of the prior art 7 shown in FIG. 7 is that the infrared light source unit (reference light source) 92 for signal compensation and the infrared light source unit (main light source) 91 for gas measurement, that is, The output of the infrared sensor 93 can be corrected and the optical path length can be extended through the plurality of reflectors to improve the sensitivity of the optical sensor unit 93, Respectively. However, since the pattern of light reaching the optical sensor unit 93 is incident in parallel, it is not easy to measure gas of a long wavelength band (> 6 [mu] m) by improving the light intensity over structures using a lens or an elliptic structure .

Meanwhile, LED (Light Emitting Diode) and PD (Photo Diode) that emit near infrared rays (0.7 to 2 μm) have been developed by the development of semiconductor technology. Recently, Light source (Point Light Source, lms MIR LED, LED Microsensor NT, Russia) and PD (lms43 PD) have been developed and are receiving the light, and carbon dioxide sensor using these is being developed. The infrared lamp, which is currently in use, has a relatively high power consumption as compared with an infrared LED, and has a disadvantage in that the output of the sensor can be changed due to the influence of vibration due to the movement of the filament due to the vibration due to the structural characteristics of the lamp. To overcome these disadvantages, development of a gas sensor using an infrared black body by MEMS (MicroElectro Mechanical Systems) technology has been attempted.

The Beer-Lambert law, which is widely applied to the fabrication and application of infrared gas sensors, is expressed by Equation 1,

Figure 112015083284511-pat00001

Where I 0 is the initial light intensity,? Is the light absorption coefficient of the specific gas, x is the gas concentration, and 1 is the optical path.

In order to improve the output of the infrared gas sensor, Park and S.H. As shown in Yi's Sensors and Materials (2011 paper), incident light arriving at the infrared sensor as shown in the following Equation 2 is effective to follow the condensed shape compared with the pattern of the initial light.

Figure 112015083284511-pat00002

only,

Figure 112015083284511-pat00003
R i is the radius of the initial light pattern, and r d is the radius of the light pattern at the sensor end.

As shown in the above equation, there are considerations to be considered in the fabrication of the optical gas sensor. 1) The light source capable of emitting infrared rays is a device in which the light intensity is reduced due to the aging of the filament, (Or LED of a specific wavelength) which has little aging, and 2) the intensity of the light emitted from the infrared light source is low enough 3) The sensitivity of the infrared gas sensor must be long enough to generate a high output voltage difference at the same concentration, so that the optical path length is long. Structure, in which the reflection at the optical structure is minimized, 4) The incident light arriving at the infrared sensor should be collected in the smallest possible radius in the center of the infrared sensor so as to reach the FOV of the optical sensor. 5) Also, as shown in Fig. 8, the initial output voltage (offset voltage) decreases due to a change in the amount of light reaching the infrared sensor as the relative humidity increases at the same temperature in the absence of the gas to be measured Therefore, it can be understood that it is easy to manufacture an infrared gas sensor with reduced error if it is compensated.

Therefore, a structure that can prevent optical scattering by condensing water vapor on a wall surface of an optical structure can be used to manufacture a sensor with reduced precision and error.

Korean Patent No. 10-0694635 Korean Patent No. 10-0732708 Korean Patent No. 10-1088360 Korean Patent Publication No. 10-2013-0082482 Korean Patent No. 10-0959611 Korean Patent No. 10-1108495 Korean Patent No. 10-1108544 Korean Patent No. 10-0944273

SUMMARY OF THE INVENTION Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and it is an object of the present invention to provide an optical gas sensor, 2) a structure capable of enhancing a high-performance sensor or light intensity, 3) a structure having a long optical path and minimizing internal reflection, and 4) an incident light that reaches the infrared sensor is infrared 5) a structure of an optical gas sensor having all of the features capable of eliminating the influence of water vapor and of improving the response speed, and the arrangement of the light source and the optical sensor And a configuration for reducing response time.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are not intended to limit the invention to the precise form disclosed. It can be understood.

A first object of the present invention is to provide an optical waveguide including a plurality of semi-ellipses formed along a part of the entire trajectory of a three-dimensional semi-ellipsoid, wherein each of the plurality of semi-ellipses has a common focus And the virtual reference lines connecting the first focus and the second focus are formed at an angle with respect to each other, and the plurality of semi-elliptic light parts are formed in a convex shape toward the upper side with reference to the reference surface, And is formed in a convex shape toward the lower side. The optical waveguide for preventing light scattering and improving chemical resistance can be achieved.

In addition, in the first object of the present invention, the predetermined angle formed by the virtual baselines connecting the first focus and the second focus may be selected within the range of 10 degrees or more and less than 180 degrees.

A second object of the present invention is to provide an optical waveguide including a plurality of semi-elliptic arcs formed along a part of the entire trajectory of a three-dimensional semi-ellipsoid, wherein the plurality of semi- And a second semi-elliptic mirror formed along a part of the entire trajectory of the second semi-ellipsoid sharing the first focus of the first semi-elliptical mirror, One of the second semi-ellipses is formed in a convex shape on an upper side with respect to a reference plane, and the other is formed in a convex shape on a lower side with respect to a reference plane, and the first semi-elliptic arc and the second semi-elliptic arc And the imaginary reference lines connecting the first and second focal points of the first and second focal points are at an angle with respect to each other.

In the second object of the present invention, the light source is located at the second focal point of the first semi-elliptic mirror and the light sensor part is located at the second focal point of the second semi-elliptic mirror, And the light source is located at a second focus of the second semi-elliptic mirror.

Also, in the second object, the light source may be an infrared LED light source or a MEMS infrared light source, and the optical sensor unit may be an infrared ray PD.

And, for the second object, a vapor deposition film may be formed on the inner surface of the semi-elliptic mirror.

A third object of the present invention is to provide an optical waveguide including a plurality of semi-elliptic arcs formed along a part of the entire trajectory of a three-dimensional semi-ellipsoid, wherein the plurality of semi-elliptic arcs include two semi-elliptic arcs Virtual reference lines connecting the first focus and the second focus have a constant angle with respect to each other, and one of the two adjacent semi-ellipses is convex toward the upper side with respect to the reference plane And the other one is formed in a convex shape on the lower side with respect to a reference plane. The optical waveguide for preventing light scattering and improving chemical resistance can be achieved.

A fourth object of the present invention is to provide an optical waveguide including a plurality of semi-elliptic arcs formed along a part of the entire trajectory of a three-dimensional semi-ellipsoid, wherein the plurality of semi- A second semi-elliptical lenght formed along a part of the entire trajectory of a second semi-ellipsoid sharing a first focus of the first semi-elliptic mirror, Wherein the first semi-elliptic surface and the third semi-elliptic surface are formed in a convex shape with respect to a reference surface, and the first semi-elliptic surface and the second semi- The second semi-elliptic surface is formed in a convex shape toward the lower side with respect to the reference surface, and a virtual semi-elliptic surface having a virtual base line connecting the first half-elliptic surface and the first half- Are constant As a light waveguide for preventing light scattering and improving chemical resistance.

In the fourth object of the present invention, it is preferable that a light source is provided at a second focal point of the first semi-elliptic mirror, a light sensor portion is located at a first focal point of the third semi-elliptical mirror, And a light source is located at a first focus of the third semi-elliptic mirror.

According to a fourth aspect of the present invention, the light source may be an infrared LED light source or a MEMS infrared light source, and the optical sensor unit may be an infrared ray PD.

According to a fourth aspect of the present invention, a vapor deposition film may be formed on the inner surface of the semi-elliptic mirror.

A fifth object of the present invention is to provide an optical gas sensor using an optical waveguide, comprising: a PCB substrate; A second half ellipse formed along a part of the entire trajectory of the second semi-ellipsoid sharing the first focus of the first semi-elliptic curve, and a second semi-elliptic curve formed along a part of the entire trajectory of the first half ellipsoid, Wherein the first semi-elliptic surface is formed in a convex shape toward the upper side with respect to the PCB substrate, the second semi-elliptic surface is formed in a convex shape toward the lower side with respect to the PCB substrate, An imaginary reference line connecting the first focus and the second focus of each of the two half-ellipses is an optical waveguide having a constant angle with respect to each other; A light source positioned at a second focal point of the first semi-elliptic mirror or a second focal point of the second semi-elliptical mirror to emit light; And an optical sensor unit positioned at a second focal point of the second semi-elliptic mirror or a second focal point of the first semi-elliptical mirror to transmit light of the light source. The optical gas sensor for preventing light scattering and improving chemical resistance . ≪ / RTI >

A sixth object of the present invention is to provide an optical gas sensor using an optical waveguide, comprising: a PCB substrate; A first semi-elliptical path formed along a part of the entire trajectory of the first semi-elliptic body, a second semi-elliptical path formed along a part of the entire trajectory of the second semi-elliptic body sharing the first focal point of the first semi- And a third semi-elliptic mirror formed along a part of the entire trajectory of the third semi-ellipsoid sharing the second focus of the second semi-elliptic mirror, wherein the first semi-elliptical mirror and the third semi-elliptical mirror Wherein the first semi-elliptic surface and the second semi-elliptic surface are formed in a convex shape on the upper side, the second semi-elliptic surface is formed in a convex shape on the lower side with reference to a reference surface, The imaginary reference lines connecting the second focal points are at an angle to each other; A light source positioned at a second focal point of the first semi-elliptic mirror or a first focal point of the third semi-elliptical mirror to emit light; And an optical sensor unit positioned at a first focal point of the third semi-elliptical mirror or a second focal point of the first semi-elliptical mirror to transmit light of the light source. . ≪ / RTI >

In the fifth and sixth aspects of the present invention, a gas supply inlet for introducing a gas into a part of the semi-elliptic side where the light source is located, the part of which has a low spatial density of light emitted from the light source, And a gas outlet provided at a side portion of the semi-elliptic mirror, wherein the optical waveguide, the gas supply inlet, and the gas outlet are hermetically maintained.

In the fifth and sixth aspects of the present invention, the apparatus may further include a flow unit provided in the gas outlet or the gas supply inlet for allowing the gas to be sucked and discharged through the optical waveguide.

In the fifth and sixth aspects of the present invention, it is possible to further include a heat generating means for heating the inside of the optical waveguide.

In the fifth and sixth aspects of the present invention, a temperature sensor for measuring an internal temperature of the optical waveguide; And a controller for controlling the heating unit on the basis of a value measured by the temperature sensor.

In the fifth and sixth aspects of the present invention, a vapor deposition film may be formed on the inner surface of the semi-elliptic mirror.

In the fifth and sixth objects of the present invention, the deposition film may be formed by depositing an Au / Ti thin film by an electron beam or a sputtering system.

According to one embodiment of the present invention, the optical path can be lengthened as compared with the patents disclosed in the prior arts 1, 2, and 3, and compared with the conventional techniques 4 and 5, a separate condensing lens is not used It is advantageous that the irradiation light can be efficiently condensed and irradiated to the optical sensor unit.

Also, according to an embodiment of the present invention, a heating element is built in the optical structure to raise the temperature by about 20 to 30 ° C compared to the ambient temperature, so that the water vapor contained in the surrounding air condenses on the inner surface of the structure Can be prevented.

According to an embodiment of the present invention, a pump or a micro fan is additionally arranged to measure and analyze the gas to be measured in a short time, thereby securing a structural and functional advantage to effectively reduce the response time can do.

According to an embodiment of the present invention, there is provided an infrared optical gas sensor comprising: 1) a structure capable of actively responding to aging of an infrared light source (by using a MEMS infrared light source or an LED); 2) (The effective length of the path can be effectively increased), or a structure capable of focusing light (by focusing point light source and semi-elliptical structure), or 3) a light path is long, (4) the incident light reaching the infrared sensor is collected in a small radius at the center of the infrared sensor, thereby being irradiated into the FOV (Field of View) of the infrared sensor, and (5) Or the manufacture of a sensor with all of the features that prevent separate calibrations and prevent corrosion of the internal reflector against acid or alkaline gases It has a possible effect.

According to an embodiment of the present invention, as shown in FIG. 18 and FIG. 19, in a region where the spatial density of infrared rays is low, a gas inlet (a structure for forcibly sucking gas for measurement of a target gas, (In an optical structure used for gas measurement by sucking outside air by using external air) and an outlet, it is possible to manufacture an optical sensor without reducing the optical efficiency.

It should be understood, however, that the effects obtained by the present invention are not limited to the above-mentioned effects, and other effects not mentioned may be clearly understood by those skilled in the art to which the present invention belongs It will be possible.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate preferred embodiments of the invention and, together with the description, serve to further the understanding of the technical idea of the invention, It should not be construed as limited.
1 is a plan view of a non-dispersive infrared gas sensor provided with an elliptical dome-shaped reflector according to Prior Art 1,
2 is a view showing an optical waveguide having a plurality of independent optical paths according to the prior art 2 and an NDIR gas sensor using the optical waveguide,
3 is a conceptual view of an optical waveguide according to Prior Art 3,
4 is an exploded perspective view of a non-dispersion infrared gas analysis apparatus having an intensive lens according to Prior Art 4,
5 is a cross-sectional view of a non-dispersive infrared gas sensor (optical structure) according to Prior Art 5,
6 is an air flow diagram of a non-dispersive infrared gas measuring apparatus according to Prior Art 6,
7 is a cross-sectional view of a non-dispersive infrared gas sensor according to Prior Art 7,
8 is a graph showing the initial output voltage (offset voltage) change due to the change in the amount of light reaching the infrared sensor as the relative humidity increases at the same temperature in the absence of the gas to be measured,
9 is a three-dimensional semi-elliptical structure showing the shape of an optical path of an infrared ray irradiated from an infrared light source (point light source, 0.3 mm) located at a first focal point of a semi-
FIG. 10 is a graph showing the relationship between the amount of infrared light per unit area reaching the photosensor portion having a diameter of 1 mm,
11 is a view showing an optical path of a structure in which the same three-dimensional semi-elliptic mirror having the first focal point as a common focal point is disposed one on top of the PCB substrate and one on the bottom of the PCB substrate,
12 is a graph showing the relationship between the amount of infrared light incident on a unit area reaching the photosensor unit in FIG. 11,
FIG. 13 is a graph illustrating a simulation result of a case where the angle between the major axes of two semi-elliptic arrays is 30 degrees under the same condition as the structure shown in FIG. 11, according to an embodiment of the present invention.
FIG. 14 is a graph showing the relationship between the amount of infrared light incident on a unit area reaching the photosensor unit in FIG. 13,
FIG. 15 is a schematic view illustrating an optical path of a light beam incident on a photosensor unit when two semi-elliptic arrays are disposed on the upper or lower surface of the PCB,
Figs. 16 and 17 are diagrams showing the amounts of infrared light incident on a unit area reaching the photosensor unit in Fig. 15,
18A is a plan view of an optical gas sensor for preventing light scattering and improving chemical resistance according to an embodiment of the present invention,
18B is a bottom view of an optical gas sensor for preventing light scattering and improving chemical resistance according to an embodiment of the present invention.
19 is a front view of an optical gas sensor for preventing light scattering and improving chemical resistance according to an embodiment of the present invention.
20 is a partial cutaway perspective view of an optical gas sensor for preventing light scattering and improving chemical resistance according to an embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more readily apparent from the following description of preferred embodiments with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Also in the figures, the thickness of the components is exaggerated for an effective description of the technical content.

Embodiments described herein will be described with reference to cross-sectional views and / or plan views that are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the shapes that are produced according to the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific forms of regions of the elements and are not intended to limit the scope of the invention. Although the terms first, second, etc. have been used in various embodiments of the present disclosure to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. The embodiments described and exemplified herein also include their complementary embodiments.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. The terms "comprises" and / or "comprising" used in the specification do not exclude the presence or addition of one or more other elements.

In describing the specific embodiments below, various specific details have been set forth in order to explain the invention in greater detail and to assist in understanding it. However, it will be appreciated by those skilled in the art that the present invention may be understood by those skilled in the art without departing from such specific details. In some instances, it should be noted that portions of the invention that are not commonly known in the description of the invention and are not significantly related to the invention do not describe confusing reasons to explain the present invention.

The present invention is characterized in that the structure of the optical gas sensor and the arrangement of the light source, the optical sensor, and the functional component that can satisfy all of the above-mentioned matters will be described with reference to the drawings.

9 shows the shape of an optical path of infrared rays irradiated from a light source (an infrared light source (point light source, 0.3 mm)) and an incident light reaching a photosensor section (infrared sensor) in the case of a three- . 10 shows the amount of infrared light per unit area reaching the photosensor portion with a diameter of 1 mm in Fig.

In a specific embodiment, when the infrared light source has an energy of 450 mW and the reflectance of the optical structure is assumed to be 95%, approximately 52.5% (236 mW) of irradiated light reaches the photosensor section And the total energy loss due to the absorption in the region other than the photosensor portion and the optical structure is about 47%, which shows a relatively effective optical characteristic. At this time, the wavelength of the infrared ray to be irradiated is assumed to be 4.26 탆 which is the absorption wavelength of the carbon dioxide gas.

9 and 10, infrared rays emitted from a light source located at a first focus F 1 of the three-dimensional semi-elliptic mirror 101 are incident on a second focus F 2 of the three- It can be seen that the maximum energy per unit area of the luminous flux reached to the optical sensor part located at the center of the optical axis is converged within a radius of 1 mm.

The optical waveguide 100 according to an embodiment of the present invention may include a plurality of semi-ellipses formed along a part of the entire trajectory of the three-dimensional semi-ellipsoid. The plurality of semi-ellipses share a first focal point F1 as a common focal point and imaginary reference lines connecting the first focal point F1 and the second focal point F2 have a constant angle? .

In addition, a plurality of semi-elliptical light portions are formed in a convex shape toward the upper side with respect to the reference plane, and the remaining portions are formed in a convex shape toward the lower side with respect to the reference plane.

The predetermined angle? Between virtual reference lines connecting the first focus F1 and the second focus F2 of a plurality of hemispherical lenses is selected within a range of 10 degrees or more and less than 180 degrees.

More specifically, the optical waveguide 100 according to an embodiment of the present invention having two semi-elliptical planes has a first semi-elliptic mirror 101 formed along a part of the entire locus of the first semi-elliptic body, And a second semi-elliptic mirror 102 formed along a part of the entire trajectory of the second semi-ellipsoid sharing the first focus F1 of the semi-elliptic mirror 101.

Either the first semi-elliptic mirror 101 or the second semi-elliptic mirror 102 is formed in a convex shape toward the upper side with reference to the reference plane, and the other one is formed in a convex shape toward the lower side with reference to the reference plane . The imaginary reference lines connecting the first focus F1 and the second focus F2 of the first semi-elliptic mirror 101 and the second semi-elliptic mirror 102 form a constant angle? .

When the light source is located at the second focus F2 of the first semi-elliptic mirror 101 and the second focus F2 of the second semi-elliptic mirror 102 is positioned at the second focus F2, Or the light sensor is located at the second focus F2 of the first semi-elliptic mirror 101 and the light source is located at the second focus F2 of the second semi-elliptic mirror 102. [

In addition, the light source according to an embodiment of the present invention is composed of an infrared LED light source or a MEMS infrared light source, and the optical sensor unit is formed of an infrared PD.

11 is a view illustrating a structure in which the same three-dimensional semi-elliptic mirror having the first focal point F1 as a common focal point is disposed one on top of the PCB substrate and one on the bottom of the PCB substrate 110, FIG. 12 shows the amount of infrared light incident on a unit area reaching the photosensor unit in FIG.

11, the optical waveguide 100 according to an embodiment of the present invention is configured such that the first semi-elliptic mirror 101 is convex toward the upper side with respect to the PCB substrate 110 serving as the reference plane, The semi-elliptic mirror 102 is convex downward with respect to the PCB substrate 110, and shares the first focal point F1 as a common focal point.

The first virtual line C1 connecting the first focus F1 and the second focus F2 of the first semi-elliptic mirror 101 and the first focus F1 of the second semi-elliptic mirror 102, And the second virtual line C2 connecting the second focus F2 are disposed at an angle of 90 degrees with respect to each other and the light source is located at the second focus F2 of the first semi-elliptic mirror 101, And the optical sensor unit is positioned at the second focus F2 of the two-elliptic mirror 102.

11 and 12, even though the first semi-elliptic mirror 101 and the second semi-elliptic mirror 102 are not present in the same space with the PCB substrate 110 as a center, Of the structure shown in FIG. 9 having the second half-ellipsoidal mirror 102 reaches the second focus F2 of the second semi-elliptic mirror 102 at which the optical sensor unit is located, and the optical path is improved to twice the degree .

13 shows a light path in the case of assuming that the angle between the long axes of two semi-elliptic mirrors is 30 degrees in a state similar to the structure shown in Fig. 11 according to an embodiment of the present invention, and Fig. 14 13 shows the amount of infrared light incident on a unit area reaching the optical sensor unit.

13 and 14 show a first virtual line C1 connecting the first focus F1 and the second focus F2 of the first semi-elliptic mirror 101 in a state similar to the structure shown in FIG. 11, And the angle of the second imaginary line C2 connecting the first focus F1 and the second focus F2 of the second semi-elliptic mirror 102 is 30 degrees.

For example, as shown in FIG. 13, infrared rays irradiated from a light source positioned at a second focus F2 of the first semi-elliptic mirror 101, which is convex toward the upper side with respect to the PCB substrate 110, The second focus (101) of the second semi-elliptic mirror (102) is convex downward with respect to the PCB substrate (110) through the first focus (F1) F2, respectively.

As shown in FIG. 14, about 33.6% of the irradiated infrared rays (which can be confirmed from the analysis result that the efficiency is about 64.1% as compared with the results shown in FIGS. 11 and 12) Is incident on the optical sensor unit located at the second focal point F2 of the second semi-elliptic mirror 102 formed to be convex downward.

In addition, the optical waveguide 100 according to an embodiment of the present invention includes three or more semi-ellipses, and two semi-elliptic surfaces adjacent to each other in the plurality of semi-ellipses share a focus, ([theta]).

That is, the plurality of half-ellipses share a first focus F1 as a common focal point between two adjacent semi-elliptic arrays, and each of the first and second focuses F1 and F2 has a virtual And one of the two adjacent semi-ellipses is convex toward the upper side with respect to the PCB substrate 110, and the other one is convex toward the lower side with respect to the reference plane . ≪ / RTI >

Specifically, in the case of three semi-elliptic arrays, a first semi-elliptic mirror 101 formed along a part of the entire trajectory of the first semi-ellipsoid and a second semi-elliptic mirror 101, The second semi-elliptic mirror 102 formed along a part of the entire trajectory of the second semi-ellipsoid sharing the second half-ellipsoid 102 and the third half And a third semi-elliptic mirror 103 formed along a part of the entire trajectory of the ellipsoid.

At this time, the first semi-elliptic mirror 101 and the third semi-elliptic mirror 103 are formed to be convex on the upper side with respect to the PCB substrate 110, and the second semi-elliptic mirror 102 is formed on the PCB substrate 110 ) Surface of the lower surface of the substrate.

The imaginary part connecting the first half-ellipse 101 and the first focus F1 and the second focus F2 of the second semi-elliptic mirror 102 and the third semi-elliptic mirror 103, The reference lines are configured to form a constant angle (&thetas;) with respect to each other.

The light source is provided at the second focal point F2 of the first semi-elliptic mirror 101 and the optical sensor unit is located at the first focus F1 of the third semi-elliptic mirror, or the first semi-elliptic mirror 101 And the light source may be located at the first focus F1 of the third semi-elliptic mirror.

As described above, it is preferable that the light source according to an embodiment of the present invention is composed of an infrared LED light source or a MEMS infrared light source, and the photosensor unit is composed of an infrared ray PD.

15 is a perspective view illustrating a state in which three semi-elliptic arrays are disposed on the upper or lower surface of the reference plane of the PCB substrate 110, FIG. 16 and FIG. 17 show the amount of infrared light incident on a unit area reaching the photosensor portion in FIG.

15, the first semi-elliptic mirror 101 is formed to be convex on the upper side with respect to the PCB substrate 110, and the second semi-elliptic mirror 102 is formed on the PCB substrate 110 as a reference The first semi-elliptic mirror 101 and the second semi-elliptic mirror 102 are configured to share the first focal point F1 as a common focal point, and the first semi-elliptic mirror 101 and the second semi- A first virtual line C1 connecting the first focus F1 and the second focus F2 and a second virtual line C1 connecting the first focus F1 and the second focus F2 of the second semi- And the second imaginary line C2 has a first angle? 1 of about 10 to 60 degrees.

15, the third semi-elliptic mirror 103 is formed to be convex toward the upper side with respect to the PCB substrate 110, and the second semi-elliptic mirror 102 and the third semi-elliptic mirror 103 103 is configured to share the second focus F2 with a common focal point and includes a second virtual line C2 connecting the first focus F1 and the second focus F2 of the second half- And the third imaginary line C3 connecting the first focus F1 and the second focus F2 of the third semi-elliptic mirror 103 have a second angle? 2 of about 10 to 60 degrees .

15, 16, and 17, the infrared rays irradiated from the infrared light source located at the second focus F2 of the first semi-elliptic mirror 101 are incident on the first half of the third half- The energy reaching the infrared PD having a diameter of 0.3 mm which is the light sensor part is about 52 mW and the infrared ray reaching the active area of the optical sensor part composed of the infrared PD reaches about 79 mW 11 to 14, the infrared energy reaching the active region is reduced to about 1/3 as compared with the case where only the two semi-elliptic paths shown in FIGS. 11 to 14 are present, And the structure is increased by three times as compared with the structure shown in FIG. 9 and FIG. 10.

Therefore, although the structure having only one semi-elliptic plane can have a large output voltage, it can be seen from the above-mentioned equation (1) that the sensitivity of the structure having two or three semi-elliptic surfaces will be effectively increased In Equation (2), the output voltage is proportional to the incident light energy density, but this is a physical quantity that can be controlled through the amplifier. Therefore, it can be effectively increased through the configuration of the external circuit.

Hereinafter, the configuration and function of the optical gas sensor 200 according to an embodiment of the present invention using the optical waveguide 100 will be described.

18A is a plan view of an optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention. 18B is a bottom view of the optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention. 19 is a front view of an optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention. 20 is a partial cutaway perspective view of an optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention. That is, FIGS. 18A, 18B, 19 and 20 show the configuration of the optical gas sensor 200 according to the specific embodiment of the present invention based on the simulation results of FIGS. 15 to 17 mentioned above.

The optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention includes a PCB substrate 110, an optical waveguide 100 having the above-mentioned configuration, a light source, a photosensor, (113), a gas outlet (114), a flow means, a temperature sensor, a heating means (120), and the like.

As described above, the optical waveguide 100 according to an embodiment of the present invention includes a first semi-elliptic mirror 101 formed along a part of the entire trajectory of the first semi-ellipsoid, A second semi-elliptic mirror 102 formed along a part of the entire trajectory of the second semi-ellipsoid sharing a first focus F1 of the second semi-elliptic mirror 102 and a second half ellipsoidal mirror 102 having a second focus F2 The first semi-elliptic mirror 101 and the third semi-ellipsoidal mirror 103 are formed along a part of the entire trajectory of the third semi-ellipsoid, The second semi-elliptic mirror 102 is formed in a convex shape on an upper side with respect to a surface of the substrate 110, the second semi-elliptic mirror 102 is formed in a convex shape on a lower side with respect to a PCB substrate 110, 101 and the imaginary reference lines connecting the first focus F1 and the second focus F2 of the second semi-elliptic mirror 102 and the third semi-elliptic mirror 103 are formed to have a constant angle with each other The.

The light source is located at the second focus F2 of the first semi-elliptic mirror 101 and emits light. The optical sensor unit is located at the first focus F1 of the third semi-elliptic mirror 103, As shown in FIG. As described above, it is preferable that the light source according to an embodiment of the present invention is composed of an infrared LED light source or a MEMS infrared light source, and the photosensor unit is composed of an infrared ray PD.

In addition, the optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention may be configured such that a portion of the side surface of the first semi-elliptic mirror 101, A gas supply inlet 113 through which the gas flows into the low density portion and a gas outlet 114 provided in a side portion of the third semi-elliptic mirror 103 in which the optical sensor portion is located. The optical waveguide 100, the gas supply inlet 113, and the gas outlet 114 are configured to maintain airtightness.

The optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention is provided in the gas discharge port 114 or the gas supply inlet 113 to supply gas to the optical waveguide 100 And a flow means 130 for sucking and discharging. The flow means 130 may be a pump or a fan.

The optical gas sensor 200 for preventing light scattering and improving chemical resistance according to an embodiment of the present invention may include a heating means 120 for heating a gas introduced into the optical waveguide 100 have.

The controller may include a temperature sensor for measuring the internal temperature of the optical waveguide 100 in real time and a controller for controlling the heating unit 120 based on the value measured by the temperature sensor.

In addition, a vapor deposition film 140 may be formed on the inner surface of the semi-elliptic mirror. The vapor deposition film 140 is formed by depositing an Au / Ti thin film by an electron beam or a sputtering system.

18A, the optical gas sensor 200 according to an embodiment of the present invention includes two semi-elliptic surfaces, that is, a first semi-elliptic mirror formed to be convex upward from the upper surface 111 of the PCB substrate 110 The second semi-elliptic mirror 102 having a convex shape from the lower surface 112 of the PCB substrate 110 to the lower side is provided, as shown in FIG. 18B, Able to know.

In an embodiment of the present invention, the infrared light source is disposed at the second focus F2 of the first semi-elliptic mirror 101 and the optical sensor unit is disposed at the first focus F1 of the third semi-elliptic mirror 103 do. As shown in FIGS. 18B and 19, on the bottom surface of the PCB 110 on which the second semi-elliptic mirror 102 is formed, a gas inlet port 113 and a gas outlet port 114 for supplying gas are provided. (Outlet port) is disposed at the front end of the infrared light source and the optical sensor unit, thereby providing spatial efficiency and optical efficiency.

In addition, as shown in FIG. 18B and FIG. 19, in an embodiment of the present invention, a flow unit including a pump or a micro-fan for sucking and measuring a gas to be measured is provided to dramatically improve the response speed of the sensor .

The current light source can be operated in ㎲ or several tens of ms. In case of infrared sensor, the response to gas is completed within about 300 ms. Can be accurately measured.

On the other hand, as shown in FIG. 20, a heating unit 120 (Heaters) is installed so as to heat air inside the semi-elliptical shape on the PCB substrate 110 and a temperature sensor capable of measuring the internal temperature is disposed By heating about 20 ~ 30 ℃ higher than the ambient temperature, the relative humidity is lowered by raising the temperature of the region where the infrared ray is reflected even though the relative humidity is higher according to the external temperature. To prevent the condensation of water vapor in the water.

At this time, the inner surfaces of the first, second, and third semi-ellipses 101, 102, and 103 are deposited by an electron beam or a sputtering system. It is considered that the Au / Ti vapor deposition film 140 formed by the electron beam or sputtering system can prevent the peeling phenomenon centered on the grain boundary which is commonly encountered in the Au / Ti thin film formed by the plating method.

Therefore, through the results of the optical simulation analysis shown in Figs. 15 to 20, which are simulation results,

1) It has the advantage of lengthening the optical path compared with the patents presented in the above-mentioned prior arts 1, 2, and 3,

2) Compared with the conventional art 4 and the conventional art 5, it has an advantage that the irradiation light can be effectively condensed and irradiated to the optical sensor part without using a separate condenser lens,

3) A heating element is built in the optical structure to increase the temperature by about 20 ~ 30 ° C compared with the ambient temperature, so that the condensation of the water vapor contained in the surrounding air can be prevented.

4) By additionally arranging a flow means composed of a pump or a micro fan, it is possible to secure a structural and functional advantage that the response time can be effectively reduced by measuring and analyzing the measurement target gas in a short time.

Therefore, according to the embodiment of the present invention, the infrared optical gas sensor,

1) structure that can actively cope with aging of infrared light source (by using MEMS infrared light source or LED),

2) a sensor capable of high sensitivity (effectively increasing the length of the optical path) or a structure capable of concentrating the irradiation light by improving the light intensity (by applying point light source and semi-elliptical structure)

3) the structure in which the optical path is long, the reflection inside the structure should be minimized,

4) The incident light reaching the infrared sensor is collected in a small radius at the center of the infrared sensor, and is irradiated into the FOV (Field of View) of the infrared sensor.

5) It would be possible to fabricate a sensor that has the function of preventing degradation or separate correction of the output voltage due to the condensation of water vapor on the inner wall surface and preventing the inner mirror from corroding acidic or alkaline gas.

Also, as shown in FIGS. 18 to 20, a structure in which a gas is forced to be sucked in for a measurement of a target gas or a structure in which a small-sized pump is used to suck outside air, The optical structure used in the measurement) and the outlet are provided, the optical sensor can be manufactured without decreasing the optical efficiency.

It should be noted that the above-described apparatus and method are not limited to the configurations and methods of the embodiments described above, but the embodiments may be modified so that all or some of the embodiments are selectively combined .

1: an elliptical dome-type reflector according to the prior art 1; a non-dispersive infrared gas sensor
2: Printed circuit based
3: elliptical domed reflector
4: Light source
5: Top plate
6: Light sensor
7: Light source fixing hole
8: Cleaning hole
9: Oval reflector
10: optical sensor coupling part
11: plate flange
20: Optical wave plate according to prior art 2
21: 1st ellipse
21a: 1st ellipse
21b: first focus
22: 2nd ellipse
22a: second ellipse
22b: second focus
23: Light source
24: Photodetector
25: first optical detecting window
26: Second optical detecting window
31: 1st bag diameter
32: second bag diameter
40: a non-dispersion infrared gas analyzing apparatus having an intensive lens according to the prior art 4
41:
42:
43: spawning part
44:
45: Injection tube
46:
47: Infrared light source
48: Light source fixing plate
49:
50: Infrared sensor
51:
52: PCB
53: Fins
54: Insertion ball
55: Through hole
56: Membrane
60: Non-dispersive infrared gas sensor according to prior art 5
61: Light source lamp
62: Oval reflector
63: Vents
64: Infrared sensor
70: Non-dispersion infrared gas measuring device according to prior art 6
71: Infrared lamp
72: reflector
73: Light sensor
74: light waveguide
75: second air inlet
76: air outlet
77: First air inlet
80: The non-dispersive infrared gas sensor according to the prior art 7 is a multi-
81: Right rear reflector
82: Left rear reflector
83: Left reflector
84: Left front reflector
85: right front reflector
86: Light source fixing unit
87: optical sensor fixing section
91: Infrared light source for gas measurement
92: Infrared light source for signal compensation
93:
100: Optical waveguide according to the present invention
101: 1st half ellipse
102: 2nd half ellipse
103: Third half ellipse
110: PCB substrate
111: PCB top surface
112: PCB substrate
113: gas supply inlet
114: gas outlet
120: Heating means
130: flow means
140:
200: Optical gas sensor according to the present invention
F 1 : First focus
F 2 : Second focus
C 1 : first imaginary line
C 2 : second imaginary line
C 3 : Third virtual line
θ: angle
θ 1 : first angle
θ 2 : second angle

Claims (19)

An optical waveguide comprising a plurality of semi-elliptic arrays formed along a part of the entire trajectory of a three-dimensional semi-ellipsoid,
The plurality of semi-
A first semi-elliptical path formed along a part of the entire trajectory of the first semi-elliptic body, a second semi-elliptical path formed along a part of the entire trajectory of the second semi-elliptic body sharing the first focal point of the first semi- And a third semi-elliptic mirror formed along a part of the entire trajectory of the third semi-ellipsoid sharing the second focus of the second semi-elliptic mirror,
Wherein the first semi-elliptic surface and the third semi-elliptic surface are formed in a convex shape on an upper side with reference to a reference surface, the second semi-elliptic surface is formed in a convex shape on the lower side with reference to a reference surface,
And the imaginary reference lines connecting the first half-ellipse with the first focus and the second focus of the second half-ellipse and the third half-ellipse make a constant angle with respect to each other. Optical waveguide.
The method according to claim 1,
A light source is provided at a second focal point of the first semi-elliptic mirror, a light sensor portion is located at a first focal point of the third semi-elliptic mirror, or
Wherein an optical sensor unit is provided at a second focus of the first semi-elliptic mirror, and a light source is located at a first focus of the third semi-elliptical mirror.
3. The method of claim 2,
The light source is composed of an infrared LED light source or a MEMS infrared light source,
Wherein the optical sensor unit comprises an infrared PD. The optical waveguide for preventing light scattering and improving chemical resistance.
The method of claim 3,
Wherein a vapor deposition film is formed on the inner surface of the semi-elliptic mirror.
In an optical gas sensor using an optical waveguide,
PCB substrate;
A second half ellipse formed along a part of the entire trajectory of the second semi-ellipsoid sharing the first focus of the first semi-elliptic curve, and a second semi-elliptic curve formed along a part of the entire trajectory of the first half ellipsoid, Wherein the first semi-elliptic surface is formed in a convex shape toward the upper side with respect to the PCB substrate, the second semi-elliptic surface is formed in a convex shape toward the lower side with respect to the PCB substrate, An imaginary reference line connecting the first focus and the second focus of each of the two half-ellipses is an optical waveguide having a constant angle with respect to each other;
A light source positioned at a second focal point of the first semi-elliptic mirror or a second focal point of the second semi-elliptical mirror to emit light; And
And an optical sensor unit positioned at a second focus of the second semi-elliptic mirror or a second focus of the first semi-elliptical mirror to transmit light of the light source.
In an optical gas sensor using an optical waveguide,
PCB substrate;
A first semi-elliptical path formed along a part of the entire trajectory of the first semi-elliptic body, a second semi-elliptical path formed along a part of the entire trajectory of the second semi-elliptic body sharing the first focal point of the first semi- And a third semi-elliptic mirror formed along a part of the entire trajectory of the third semi-ellipsoid sharing the second focus of the second semi-elliptic mirror, wherein the first semi-elliptical mirror and the third semi-elliptical mirror Wherein the first semi-elliptic surface and the second semi-elliptic surface are formed in a convex shape on the upper side, the second semi-elliptic surface is formed in a convex shape on the lower side with reference to a reference surface, The imaginary reference lines connecting the second focal points are at an angle to each other;
A light source positioned at a second focal point of the first semi-elliptic mirror or a first focal point of the third semi-elliptical mirror to emit light; And
And an optical sensor unit positioned at a first focus of the third semi-elliptic mirror or a second focus of the first semi-elliptical mirror to transmit the light of the light source.
The method according to claim 5 or 6,
A gas supply inlet through which a gas is introduced into a part of a side of the semi-elliptic mirror where the light source is located, the light having a low spatial density of light emitted from the light source;
Further comprising a gas outlet provided on a side portion of the semi-elliptic mirror on which the optical sensor unit is located,
Wherein the optical waveguide, the gas supply inlet, and the gas outlet are kept air-tight.
8. The method of claim 7,
Further comprising flow means provided at the gas discharge port or the gas supply inlet for discharging the gas to the optical waveguide.
The method according to claim 5 or 6,
Further comprising a heating means for heating the inside of the optical waveguide. The optical gas sensor for preventing light scattering and improving chemical resistance.
10. The method of claim 9,
A temperature sensor for measuring an internal temperature of the optical waveguide; And
Further comprising a control unit for controlling the heating unit based on a value measured by the temperature sensor. The optical gas sensor for preventing light scattering and improving chemical resistance.
The method according to claim 6,
Wherein an evaporation film is formed on an inner surface of at least one of the first semi-elliptic mirror, the second semi-elliptic mirror, and the third semi-elliptic mirror.
12. The method of claim 11,
The vapor-
Wherein the Au / Ti thin film is formed by electron beam or sputtering system. delete delete delete delete delete delete delete
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