KR101742541B1 - NaxIn1SyClz 버퍼 층을 갖는, 박막 태양 전지를 위한 층 시스템 - Google Patents

NaxIn1SyClz 버퍼 층을 갖는, 박막 태양 전지를 위한 층 시스템 Download PDF

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KR101742541B1
KR101742541B1 KR1020147035727A KR20147035727A KR101742541B1 KR 101742541 B1 KR101742541 B1 KR 101742541B1 KR 1020147035727 A KR1020147035727 A KR 1020147035727A KR 20147035727 A KR20147035727 A KR 20147035727A KR 101742541 B1 KR101742541 B1 KR 101742541B1
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layer
buffer layer
solar cell
thin film
sodium
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Korean (ko)
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KR20150013328A (ko
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토마스 햅
슈테판 조스트
외르크 팔므
슈테판 폴너
토마스 달리보르
롤란드 디트뮐러
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쌩-고벵 글래스 프랑스
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Assigned to 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 reassignment 벵부 디자인 앤드 리서치 인스티튜트 포 글래스 인더스트리 권리의 전부이전등록 Assignors: 쌩-고벵 글래스 프랑스
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
KR1020147035727A 2012-06-20 2013-06-19 NaxIn1SyClz 버퍼 층을 갖는, 박막 태양 전지를 위한 층 시스템 Active KR101742541B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12172699 2012-06-20
EP12172699.6 2012-06-20
PCT/EP2013/062703 WO2013189968A1 (de) 2012-06-20 2013-06-19 SCHICHTSYSTEM FÜR DÜNNSCHICHTSOLARZELLEN MIT NaxInlSyClz-PUFFERSCHICHT

Publications (2)

Publication Number Publication Date
KR20150013328A KR20150013328A (ko) 2015-02-04
KR101742541B1 true KR101742541B1 (ko) 2017-06-01

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Application Number Title Priority Date Filing Date
KR1020147035727A Active KR101742541B1 (ko) 2012-06-20 2013-06-19 NaxIn1SyClz 버퍼 층을 갖는, 박막 태양 전지를 위한 층 시스템

Country Status (8)

Country Link
US (1) US9871155B2 (https=)
EP (1) EP2865011B1 (https=)
JP (1) JP5985052B2 (https=)
KR (1) KR101742541B1 (https=)
CN (1) CN105144401B (https=)
ES (1) ES2772449T3 (https=)
IN (1) IN2014KN02866A (https=)
WO (1) WO2013189968A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382618B2 (en) * 2014-07-18 2016-07-05 UChicago Argnonne, LLC Oxygen-free atomic layer deposition of indium sulfide
ES2753449T3 (es) * 2014-12-22 2020-04-08 Bengbu Design & Res Inst Glass Ind Método para producir un sistema de capas para células solares de película delgada que tienen una capa tampón de sulfuro de indio y de sodio
KR101671002B1 (ko) 2015-07-24 2016-11-01 청주대학교 산학협력단 태양전지 반사방지막 및 그 제조방법
WO2025184813A1 (en) * 2024-03-06 2025-09-12 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Method and apparatus for producing a layer system for the manufacture of thin-film solar cells

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100247745A1 (en) * 2007-09-12 2010-09-30 Dominik Rudmann Method for manufacturing a compound film

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH11204810A (ja) * 1998-01-08 1999-07-30 Asahi Chem Ind Co Ltd 化合物半導体太陽電池
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
US20090235987A1 (en) 2008-03-24 2009-09-24 Epv Solar, Inc. Chemical Treatments to Enhance Photovoltaic Performance of CIGS
DE102008024230A1 (de) 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
JP2011204810A (ja) 2010-03-25 2011-10-13 Sumitomo Bakelite Co Ltd 波長変換部材および光起電装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100247745A1 (en) * 2007-09-12 2010-09-30 Dominik Rudmann Method for manufacturing a compound film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
I. Lauermann et al. "Synchrotron-based spectroscopy for the characterization of surfaces and interfaces in chalcopyrite thin-film solar cells." (2011.02.03.)*

Also Published As

Publication number Publication date
EP2865011B1 (de) 2019-11-13
WO2013189968A1 (de) 2013-12-27
US9871155B2 (en) 2018-01-16
CN105144401B (zh) 2018-02-09
IN2014KN02866A (https=) 2015-05-08
JP2015520521A (ja) 2015-07-16
ES2772449T3 (es) 2020-07-07
US20150295105A1 (en) 2015-10-15
KR20150013328A (ko) 2015-02-04
EP2865011A1 (de) 2015-04-29
JP5985052B2 (ja) 2016-09-06
CN105144401A (zh) 2015-12-09

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