KR101742528B1 - Method of Exfoliating Resin Film Layer and Method of Manufacturing Thin Film Element Device - Google Patents

Method of Exfoliating Resin Film Layer and Method of Manufacturing Thin Film Element Device

Info

Publication number
KR101742528B1
KR101742528B1 KR1020150133185A KR20150133185A KR101742528B1 KR 101742528 B1 KR101742528 B1 KR 101742528B1 KR 1020150133185 A KR1020150133185 A KR 1020150133185A KR 20150133185 A KR20150133185 A KR 20150133185A KR 101742528 B1 KR101742528 B1 KR 101742528B1
Authority
KR
South Korea
Prior art keywords
layer
resin film
nanoparticle
film layer
support substrate
Prior art date
Application number
KR1020150133185A
Other languages
Korean (ko)
Other versions
KR20160042382A (en
Inventor
이사오 아다치
Original Assignee
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Publication of KR20160042382A publication Critical patent/KR20160042382A/en
Application granted granted Critical
Publication of KR101742528B1 publication Critical patent/KR101742528B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Laminated Bodies (AREA)

Abstract

An object of the present invention is to provide a method of peeling a resin film layer which is low in initial cost and high in productivity, and can be reused at a low cost after the use of the substrate.
The present invention is a method for peeling a resin film layer comprising a step of forming a nanoparticle layer on a support substrate, a step of forming a resin film layer on the nanoparticle layer, and a step of peeling the resin film layer from the support substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of separating a resin film layer and a manufacturing method of a thin film element device,

The present invention relates to a method for peeling a resin film layer and a method for manufacturing a thin film element device.

In recent years, thin film device devices such as displays have been required to be thin and lightweight and flexible. In order to meet such a demand, it is necessary to form a thin film element on a resin substrate or a resin film. However, since the resin substrate and the resin film are inferior in heat resistance and chemical resistance as compared with the glass substrate, a technique of directly forming a thin film element thereon can not be employed. Therefore, in manufacturing a thin film element device having a thin film element such as a thin film transistor (TFT), a technique of forming a resin layer on a glass substrate, forming a thin film element thereon, peeling the glass element from the glass substrate, Has been developed. However, since the glass substrate and the resin layer are generally highly adhesive, it is difficult to peel off the glass substrate and the resin layer by physical force. Therefore, Patent Document 1 discloses a technique in which an amorphous silicon layer is formed as a separation layer on a substrate, a thin film transistor is formed on the amorphous silicon layer, and hydrogen is generated by irradiating the separation layer with laser light or the like to generate a gap in the separation layer interface, A technique for peeling a transistor is disclosed.

Patent Document 1: Japanese Patent Application Laid-Open No. 2000-133809

However, in the technique of Patent Document 1, it is necessary to newly introduce a decompression CVD apparatus for forming a separation layer made of amorphous silicon and a laser apparatus for irradiating a laser beam to the separation layer, which increases initial cost and low productivity have. Furthermore, in the technique of Patent Document 1, there is also a problem in that it is costly to remove the separation layer when an attempt is made to reuse the substrate after the thin film transistor is peeled off.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a method of peeling a resin film layer and a method of manufacturing a thin film element device which are low in initial cost and high in productivity, .

The method for peeling a resin film layer according to the present invention includes a step of forming a nanoparticle layer on a support substrate, a step of forming a resin film layer on the nanoparticle layer, and a step of peeling the resin film layer from the support substrate .

A method of manufacturing a thin film element device according to the present invention is a method of manufacturing a thin film element device, comprising the steps of: forming a nanoparticle layer on a support substrate; forming a resin film layer on the nanoparticle layer; , And a step of peeling the resin film layer on which the thin film element layer is formed from the support substrate.

According to the present invention, it is possible to provide a method for peeling a resin film layer and a method for manufacturing a thin film element device, which are low in initial cost and high in productivity, and can be reused at low cost for a used substrate.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view for explaining respective steps of a resin film layer peeling method according to Embodiment 1 of the present invention. Fig.
2 is a view for explaining an example of controlling the adhesion between the support substrate and the resin film layer in the resin film layer peeling method according to Embodiment 1 of the present invention.
Fig. 3 is a schematic diagram for explaining respective steps of the thin film element device manufacturing method according to Embodiment 2 of the present invention.
4 shows the results of observation of the glass substrate and the resin film layer after peeling in Example 1. Fig.
Fig. 5 shows the results of observation of the glass substrate and the resin film layer after peeling in Comparative Example 1. Fig.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of a method for peeling a resin film layer and a method for manufacturing a thin film element device according to the present invention will be described with reference to the drawings.

≪ Embodiment 1 >

1 (a) to 1 (c) are schematic views for explaining respective steps of a method for peeling a resin film layer according to Embodiment 1 of the present invention. In the method of peeling the resin film layer according to Embodiment 1, the nanoparticle layer 11 is first formed on the supporting substrate 10 (for example, quartz glass, heat-resistant glass, etc.) excellent in heat resistance as shown in Fig. 1 do. The method of forming the nanoparticle layer 11 is a method of forming the nanoparticle layer 12 on the surface of the support substrate 10 by applying an intermolecular force and an electrostatic force to the nanoparticle layer 11, It is preferable that the nanoparticle layer 11 is not formed on the support substrate 10. It is preferable that the nanoparticle layer 11 is not formed on the support substrate 10, Is coated on the support substrate 10 and then dried. Examples of the application method of the nanoparticle dispersion include a spin coating method, a slit coating method, a roll coating method, and an ink jet method. The amount of the nanoparticles 12 deposited on the support substrate 10 is changed by increasing or decreasing the concentration of the nanoparticles 12 in the nanoparticle dispersion or by applying the dispersion of the nanoparticles to the support substrate 10 a plurality of times, The adhesion of the film layer can be controlled. Furthermore, the adhesion of the support substrate 10 and a resin film layer described later can be controlled by forming a portion for applying the nanoparticle dispersion liquid on the support substrate 10 and a portion for not applying the nanoparticle dispersion liquid. Fig. 2 shows an example of controlling the adhesion between the support substrate 10 and the resin film layer. In Fig. 2, the adhesion of the peripheral edge portion 20 on the support substrate 10 is increased, and the adhesion of the portion other than the peripheral edge portion is reduced. In order to control the adhesion, the nanoparticle dispersion liquid is coated on a portion other than the peripheral portion of the support substrate 10 and dried. Thereafter, a low-concentration nanoparticle dispersion liquid having a lower concentration of nanoparticles than the previously coated nanoparticle dispersion is applied to the support substrate 10, A method in which the nanoparticle dispersion formed on the peripheral portion 20 of the support substrate 10 is removed after the nanoparticle dispersion is applied on the entire surface of the support substrate 10 and dried, have. The concentration of the nanoparticles in the nanoparticle dispersion liquid may be suitably set according to the necessary adhesion, but is preferably 2 wt% to 20 wt% from the viewpoint of coating properties and stability of the nanoparticle dispersion. By increasing the adhesion of the peripheral edge portion 20 on the support substrate 10 and reducing the adhesion of the portion other than the peripheral edge portion as shown in Fig. 2, the peripheral edge portions 20 The resin film layer 13 can be easily peeled off from the support substrate 10 after the completion of the process. After the dispersion of the nanoparticle dispersion is applied to a portion other than the peripheral portion on the support substrate 10 and dried, a low-concentration nanoparticle dispersion liquid having a lower concentration of nanoparticles than the previously coated nanoparticle dispersion is applied to the entire surface of the support substrate 10 The nanoparticle layer forms a flexible substrate in the form of a nanoparticle layer adhered to the lower part of the resin film layer 13 separated from the support substrate 10 by the first density at the peripheral portion 20 And has a second density greater than the first density at a portion other than the peripheral portion, that is, the central portion. According to the method of removing the nanoparticle layer formed on the peripheral edge portion 20 on the support substrate 10 after the nanoparticle dispersion liquid is coated on the entire surface of the support substrate 10 and dried, At the lower part of the resin film layer 13, a nanoparticle layer is formed as a flexible substrate. At this time, the periphery of the resin film layer 13 is exposed and the nanoparticle layer has a smaller planar area than the resin film layer 13.

The nanoparticles 12 constituting the nanoparticle layer 11 may be appropriately selected from an inorganic material and an organic material according to the temperature condition in the case of further forming a thin film element on a resin film layer described later, from TiO 2, SiO 2, Al 2 O 3 And the like. The particle diameter of the nanoparticles 12 may be appropriately selected depending on the use of the thin film element which is further formed on the resin film layer, but is usually about 1 nm to 100 nm. When transparency is required for the resin film layer, Specifically, 40 nm or less. Transparency can be maintained by using nanoparticles 12 having a particle diameter of 40 nm or less.

Subsequently, a resin film layer 13 is formed on the nanoparticle layer 11 as shown in Fig. 1 (b). The method of forming the resin film layer 13 is not particularly limited as long as it is a method capable of forming a resin film having heat resistance capable of withstanding a temperature of about 350 DEG C to 450 DEG C, Since a flexible device can be manufactured without requiring facility investment by forming a thin film element on the substrate 10 after peeling the thin film element from the support substrate 10 after completion of the thin film element, a method of applying resin varnish and then curing desirable. Examples of the resin varnish coating method include a spin coating method, a slit coating method, a roll coating method, and an ink jet method. The resin constituting the resin varnish may be appropriately selected from a thermosetting resin and an ultraviolet-setting resin, but polyimide and silsesquioxane are preferred from the viewpoint of high heat resistance and small dimensional fluctuation due to heat. It is preferable that the thickness of the resin film layer is 10 占 퐉 to 20 占 퐉 in addition to the thickness of the support substrate 10 since the existing manufacturing apparatus is used as it is.

Finally, the resin film layer 13 is peeled from the support substrate 10 as shown in Fig. 1 (c). The peeling method is not particularly limited as far as it is a method of peeling by a physical force, but peeling is preferable because it does not damage the thin film element formed further on the resin film layer 13. [ Since the nanoparticle layer 11 does not remain on the support substrate 10 after the resin film layer 13 has been peeled off (attached to the resin film layer 13 side), the support substrate 10 is reused through a simple cleaning step It is possible.

The method of peeling the resin film layer according to Embodiment 1 does not require the introduction of a low pressure CVD apparatus and a laser apparatus newly, and can be carried out using an existing apparatus such as a spin coater, so that the initial cost is low and the productivity is high, It is possible to reuse the support substrate after the cleaning by simple cleaning, so that the manufacturing cost can be reduced.

≪ Embodiment 2 >

3 (a) to 3 (d) are schematic diagrams for explaining respective steps of a thin film element device manufacturing method according to Embodiment 2 of the present invention. 3A and 3B are the same as those shown in Figs. 1A and 1B described in the first embodiment, and a description thereof will be omitted here. As shown in Fig. 2, by increasing the adhesion of the peripheral edge portion 20 on the support substrate 10 and reducing the adhesion of the portion other than the peripheral edge portion, It is possible to prevent the resin film layer 13 from being peeled off from the support substrate 20 and to release the resin film layer 13 from the support substrate 10 after completion of the process.

A thin film element layer 14 including a thin film element is formed on the resin film layer 13 as shown in Fig. 3 (c). The thin film element is a device having a predetermined function formed by a thin film, and includes, for example, a thin film transistor (TFT), an organic light emitting diode (OLED) and the like. The thin film element layer 14 can be formed according to a known method.

Next, as shown in Fig. 3 (d), the resin film layer 13 on which the thin film element layer 14 is formed is peeled from the support substrate 10. The peeling method is not particularly limited as long as it is a method of peeling by physical force, but peeling is preferable because it does not damage the thin film element formed on the resin film layer 13. Thus, a thin film element device in which the thin film element layer 14 is formed on the resin film layer 13 without damaging the thin film element layer can be obtained. Since the nanoparticle layer 11 does not remain on the support substrate 10 after the resin film layer 13 on which the thin film element layer 14 is formed is peeled off (attached to the resin film layer 13 side), the support substrate 10 ) Can be reused through a simple washing process.

The method of manufacturing a thin film element device according to Embodiment 2 can be carried out by using an existing apparatus such as a spin coater without the need to newly introduce a low pressure CVD apparatus and a laser apparatus so that the initial cost is low and the productivity is high, The substrate can be reused by simple cleaning, so that the manufacturing cost can be reduced.

Hereinafter, the present invention will be described in detail with reference to examples and comparative examples, but the present invention is not limited to these examples.

≪ Example 1 >

A glass substrate (41 mm x 41 mm x 0.7 mm thick) serving as a support substrate was cleaned using a detergent and pure water, followed by UV cleaning. Subsequently, an aqueous dispersion of TiO 2 particles (TKS-203 manufactured by TAYCA CORPORATION, TiO 2 concentration: 20 wt%) having a particle diameter of 6 nm was coated on the glass substrate using a spin coater with the rotation number set at 1000 rpm, For 3 minutes to form a nanoparticle layer.

Subsequently, a transparent polyimide varnish (TOYOBO CO., LTD. KS-TD) was coated on the nanoparticle layer using a spin coater with the number of revolutions set to 1000 rpm, and pre-baked at 100 ° C for 10 minutes . Thereafter, post-baking was performed at 300 DEG C for 1 hour in a nitrogen atmosphere to form a resin film layer having a final thickness of about 10 mu m.

The resin film layer could be completely peeled off from the glass substrate when the tape was attached to the end of the formed resin film layer and pulled. The results of observation of the glass substrate and the resin film layer after peeling are shown in Fig.

≪ Comparative Example 1 &

The glass substrate (41 mm x 41 mm x 0.7 mm thick) was cleaned using a detergent and pure water, followed by UV cleaning. Subsequently, a transparent polyimide varnish (TOYOBO CO., LTD. KS-TD) was coated on a glass substrate by using a spin coater with the number of revolutions set at 1000 rpm, and then prebaked at 100 DEG C for 10 minutes. Thereafter, post-baking was performed at 300 DEG C for 1 hour in a nitrogen atmosphere to form a resin film layer having a final thickness of about 10 mu m.

When a tape was stuck to the end of the formed resin film layer, a crack (film tearing) occurred in the resin film layer, and the resin film layer could not be peeled off from the glass substrate. The results of observation of the glass substrate and the resin film layer after peeling are shown in Fig.

≪ Example 2 >

Aqueous dispersion of TiO 2 particles having a particle size of 6nm (TAYCA CORPORATION product TKS-203, TiO 2 concentration: 20wt%) or diluted with water to 2wt% of TiO 2 concentration, 3wt%, 4wt%, 5wt % , or 10wt% A nanoparticle layer was formed in the same manner as in Example 1, except that the modified water dispersion was applied on a glass substrate using a spin coater with a rotation speed of 2000 rpm. Subsequently, a resin film layer was formed in the same manner as in Example 1 on the nanoparticle layer.

The peel test (90 degree method) of the formed resin film layer was performed by IMADA CO., LTD. Product MX-500N-E, and the adhesion between the glass substrate and the resin film layer was measured. The results are shown in Table 1.

TiO 2 concentration (wt%) Adhesion (N) 2 2.8 3 2.2 4 0.6 5 0.1 10 0.1 20 0.2

From these results, it was found that the adhesion between the glass substrate and the resin film layer can be controlled by increasing or decreasing the TiO 2 concentration.

≪ Example 3 >

(TKS-203 manufactured by TAYCA CORPORATION, TiO 2 concentration: 20 wt%) of TiO 2 particles having a particle size of 6 nm was diluted with water to prepare a water dispersion in which the TiO 2 concentration was changed to 3 wt% and 5 wt%. A water dispersion of TiO 2 concentration of 3 wt% was applied to the glass substrate using a spin coater with the rotation speed set to 2000 rpm, and then dried at 100 ° C for 3 minutes. Thereafter, using a spin coater having a rotational speed of 2000 rpm, TiO 2 A water dispersion having a concentration of 5 wt% was applied and dried at 100 DEG C for 3 minutes to form a nanoparticle layer. Subsequently, a resin film layer was formed in the same manner as in Example 1 on the nanoparticle layer.

The peel test (90 degree method) of the formed resin film layer was performed by IMADA CO., LTD. The product MX-500N-E was used, and the adhesion between the glass substrate and the resin film layer was measured and found to be 0.1 N. From this result, it was found that the adhesion between the glass substrate and the resin film layer was changed by applying the aqueous dispersion of TiO 2 particles twice.

10: Support substrate 11: Nanoparticle layer
12: nanoparticles 13: resin film layer
14: thin film element layer 20: peripheral portion

Claims (15)

A step of forming a nanoparticle layer on a supporting substrate,
A step of forming a resin film layer on the nanoparticle layer,
And peeling the resin film layer from the support substrate,
In the step of forming the nanoparticle layer, the nanoparticle dispersion is partially coated on the supporting substrate and dried. Then, a low-concentration nanoparticle dispersion having a lower concentration of nanoparticles than the nanoparticle dispersion is applied on the entire surface of the supporting substrate and dried Wherein the nanoparticle layer is formed.
The method according to claim 1,
Wherein the nanoparticle layer is formed by applying a dispersion of nanoparticles on the support substrate and then drying the nanoparticle dispersion.
delete 3. The method according to claim 1 or 2,
Wherein the nanoparticles constituting the nanoparticle layer are inorganic materials.
5. The method of claim 4,
Wherein the nanoparticle layer constituting the nanoparticle layer has a diameter of 40 nm or less.
The method according to claim 1,
Wherein the resin film layer is formed by applying a resin varnish on the nanoparticle layer and curing the resin varnish layer.
The method according to claim 6,
Wherein the resin varnish is a polyimide varnish.
The method according to claim 1,
A method for peeling a resin film layer that applies the partially dispersed nanoparticle dispersion onto a portion of the support substrate other than a peripheral portion thereof.
A step of forming a nanoparticle layer on a supporting substrate,
Removing the nanoparticle layer formed on the periphery of the support substrate;
A step of forming a resin film layer on the periphery of the support substrate and the nanoparticle layer,
And peeling the resin film layer from the support substrate.
A step of forming a nanoparticle layer on a supporting substrate,
A step of forming a resin film layer on the nanoparticle layer,
A step of forming a thin film element layer including a thin film element on the resin film layer,
And peeling the resin film layer on which the thin film element layer is formed from the support substrate,
In the step of forming the nanoparticle layer, the nanoparticle dispersion is coated on a portion other than the peripheral portion on the support substrate and dried. Thereafter, a low-concentration nanoparticle dispersion having a lower nanoparticle concentration than the nanoparticle dispersion is coated on the entire surface of the support substrate Wherein the nanoparticle layer is formed by applying and drying the nanoparticle layer.
delete A step of forming a nanoparticle layer on a supporting substrate,
Removing the nanoparticle layer formed on the periphery of the support substrate;
A step of forming a resin film layer on the periphery of the support substrate and the nanoparticle layer,
A step of forming a thin film element layer including a thin film element on the resin film layer,
And peeling the resin film layer on which the thin film element layer is formed from the support substrate.
A resin film layer;
And a nanoparticle layer adhered to one surface of the resin film layer,
Wherein the nanoparticle layer has a first density at the periphery of the resin film layer and a second density at the center of the resin film layer, the second density being greater than the first density,
The nano-particle layer is a flexible substrate comprising a nano-particles of one of TiO 2, SiO 2, Al 2 O 3.
A resin film layer;
And a nanoparticle layer adhered to one surface of the resin film layer,
The periphery of the resin film layer is exposed and the nanoparticle layer has a smaller planar area than the resin film layer,
The nano-particle layer is a flexible substrate comprising a nano-particles of one of TiO 2, SiO 2, Al 2 O 3.
A flexible substrate according to claim 13 or 14;
And a thin film element layer located on the other side of the resin film layer.
KR1020150133185A 2014-10-09 2015-09-21 Method of Exfoliating Resin Film Layer and Method of Manufacturing Thin Film Element Device KR101742528B1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2014-207804 2014-10-09
JP2014207804 2014-10-09
JPJP-P-2014-251385 2014-12-12
JP2014251385A JP6334380B2 (en) 2014-10-09 2014-12-12 Method for peeling resin film layer and method for manufacturing thin film element device

Publications (2)

Publication Number Publication Date
KR20160042382A KR20160042382A (en) 2016-04-19
KR101742528B1 true KR101742528B1 (en) 2017-06-01

Family

ID=55956413

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150133185A KR101742528B1 (en) 2014-10-09 2015-09-21 Method of Exfoliating Resin Film Layer and Method of Manufacturing Thin Film Element Device

Country Status (2)

Country Link
JP (1) JP6334380B2 (en)
KR (1) KR101742528B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110728911A (en) * 2019-10-21 2020-01-24 云谷（固安）科技有限公司 Display substrate, display panel and manufacturing method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102028507B1 (en) * 2017-10-24 2019-10-04 한국전력공사 Method for recycling a substrate using selective region growth method
JP7348218B2 (en) 2021-02-05 2023-09-20 アンリツ株式会社 Temperature test equipment and temperature test method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253512A (en) 2005-03-11 2006-09-21 Ricoh Co Ltd Wiring board and manufacturing method
WO2013174881A1 (en) * 2012-05-22 2013-11-28 Centre National De La Recherche Scientifique (Cnrs) Method for producing a film comprising three-dimensional magnetic microstructures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4472238B2 (en) * 2001-08-10 2010-06-02 株式会社半導体エネルギー研究所 Stripping method and semiconductor device manufacturing method
JP2013026546A (en) * 2011-07-25 2013-02-04 Dainippon Printing Co Ltd Substrate for thin film device and method of manufacturing thin film device
JP5964607B2 (en) * 2012-02-14 2016-08-03 株式会社カネカ Support with release layer, substrate structure, and method for manufacturing electronic device
JP2014086451A (en) * 2012-10-19 2014-05-12 Kaneka Corp Flexible electronic device and manufacturing method of flexible electronic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253512A (en) 2005-03-11 2006-09-21 Ricoh Co Ltd Wiring board and manufacturing method
WO2013174881A1 (en) * 2012-05-22 2013-11-28 Centre National De La Recherche Scientifique (Cnrs) Method for producing a film comprising three-dimensional magnetic microstructures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110728911A (en) * 2019-10-21 2020-01-24 云谷（固安）科技有限公司 Display substrate, display panel and manufacturing method thereof
CN110728911B (en) * 2019-10-21 2021-09-14 云谷（固安）科技有限公司 Display substrate, display panel and manufacturing method thereof

Also Published As

Publication number Publication date
JP2016082210A (en) 2016-05-16
KR20160042382A (en) 2016-04-19
JP6334380B2 (en) 2018-05-30

Similar Documents

Publication Publication Date Title
JP5796449B2 (en) Manufacturing method of electronic device, manufacturing method of carrier substrate with resin layer
KR101973826B1 (en) Laminate, method for producing laminate, and method for producing glass substrate having member for electronic devices attached thereto
JP5583140B2 (en) Method for preparing flexible substrate assembly and flexible substrate assembly prepared by the method
JP5521034B2 (en) Method for providing flexible semiconductor device at high temperature and flexible semiconductor device
KR101742528B1 (en) Method of Exfoliating Resin Film Layer and Method of Manufacturing Thin Film Element Device
US9673014B2 (en) Method of manufacturing display panel
WO2010079688A1 (en) Glass laminate and manufacturing method therefor
JP6927203B2 (en) Glass laminate and its manufacturing method
CN105789116A (en) Manufacturing method of flexible substrate
US11320948B2 (en) Film touch sensor and method for fabricating the same
JPWO2015119210A1 (en) Glass laminate
US20140113452A1 (en) Wafer edge trimming method
TW201432971A (en) Electronic device manufacturing method, and glass laminate manufacturing method
JPWO2010110087A1 (en) Manufacturing method of electronic device
US20140342148A1 (en) Glass structures and methods of creating and processing glass structures
WO2014103678A1 (en) Glass laminate, method for producing same, and supporting base with silicone resin layer
US20160114565A1 (en) Bonded Article of Thin Glass on Support Substrate, Preparation Method and Use Thereof
TW201636218A (en) Transparent conductive film
WO2016148118A1 (en) Manufacturing method for relief pattern forming body and imprint apparatus
WO2017066924A1 (en) Method for post-processing of bonded article
KR20140073903A (en) Manufacturing method of water-repellent surface having improved durability, and substrate having water-repellent surface
JP5168805B2 (en) Letterpress for letterpress reversal offset printing and method for producing the same, or printed matter production method using the same
JP6875964B2 (en) Manufacturing method of long hard coat film for transparent conductive film
KR101487102B1 (en) Method of manufacturing a glass substrate structure
TW201635119A (en) Film touch sensor and method for fabricating the same

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant