KR101740453B1 - Method of manufacturing ceramic circuit board - Google Patents

Method of manufacturing ceramic circuit board Download PDF

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Publication number
KR101740453B1
KR101740453B1 KR1020150093756A KR20150093756A KR101740453B1 KR 101740453 B1 KR101740453 B1 KR 101740453B1 KR 1020150093756 A KR1020150093756 A KR 1020150093756A KR 20150093756 A KR20150093756 A KR 20150093756A KR 101740453 B1 KR101740453 B1 KR 101740453B1
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KR
South Korea
Prior art keywords
copper
thin film
film layer
titanium
pattern
Prior art date
Application number
KR1020150093756A
Other languages
Korean (ko)
Other versions
KR20170003287A (en
Inventor
김민수
김상주
김병길
Original Assignee
주식회사 코멧네트워크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코멧네트워크 filed Critical 주식회사 코멧네트워크
Priority to KR1020150093756A priority Critical patent/KR101740453B1/en
Priority to CN201680038890.2A priority patent/CN107852827A/en
Priority to PCT/KR2016/006668 priority patent/WO2017003128A1/en
Priority to JP2017567738A priority patent/JP2018524816A/en
Publication of KR20170003287A publication Critical patent/KR20170003287A/en
Application granted granted Critical
Publication of KR101740453B1 publication Critical patent/KR101740453B1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a ceramic circuit board, and more particularly, to a method of manufacturing a ceramic circuit board to form a circuit pattern through printing. A method of manufacturing a ceramic circuit board according to the present invention includes the steps of: a) forming a titanium (Ti) thin film layer on a ceramic substrate; b) forming a copper (Cu) thin film layer on the titanium (Ti) c) printing and patterning a copper (Cu) pattern on the copper (Cu) thin film layer using a copper (Cu) paste and then drying the copper (Cu) pattern one or more times to form a copper (Cu) pattern layer; d) Sintering the copper (Cu) pattern layer; e) removing a copper (Cu) thin film layer of the portion where the copper (Cu) pattern layer is not formed; f) And removing the titanium (Ti) thin film layer of the unformed portion. According to the method for manufacturing a ceramic circuit board according to the present invention, a ceramic circuit board having excellent bonding force between a metal pattern and a ceramic substrate can be easily manufactured.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a ceramic circuit board,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a ceramic circuit board, and more particularly, to a method of manufacturing a ceramic circuit board to form a circuit pattern through printing.

Devices requiring large current and high voltage, such as power devices for power supply, are very large in heat generation. As a substrate on which these devices are mounted, a metal plate such as Al or Cu is attached to a substrate made of a ceramic material such as AlN or Si 3 N 4 Lt; / RTI >

Such a substrate is manufactured by attaching a metal plate to a ceramic substrate to manufacture a disk, and then forming a metal pattern through photolithography and etching.

Korean Patent Registration No. 0477866 discloses a method of manufacturing a metal-ceramic composite substrate in which a ceramic substrate and a metal plate are attached using a brazing material. In Korean Patent Laid-Open Publication No. 2014-0127228, a nitride layer And an Ag-Cu process tissue layer having a thickness of 15 占 퐉 or less is formed between the copper plate and the copper plate to improve the bonding force between the ceramic substrate and the copper plate. Korean Patent Registration No. 1393760 discloses a method for bonding a ceramics substrate and a metal thin film, comprising the steps of: printing a thick film on a ceramics substrate using a conductive paste containing a filler powder having a particle size of 0.1 to 10.0 탆; There is disclosed a method of joining a ceramic substrate and a metal thin film including a step of drying the thick film printed on a substrate and a step of laminating a metal thin film on the dried thick film and then performing heat treatment.

A method of forming a metal pattern through patterning by first preparing a disk is such that, in the process of forming a metal pattern, a portion of a relatively thick metal plate must be removed by wet etching. Since the thickness of the metal plate to be removed is thick, the cross-sectional direction of the metal plate is also corroded during the etching process. Further, if the process of heating and re-cooling the ceramic circuit board by the heat of the device due to the difference in thermal expansion coefficient between the metal plate and the ceramic substrate is repeated, there is a problem that the metal plate may be peeled off.

In order to solve such a problem, Korean Patent Laid-Open Publication No. 2014-0095083 discloses a method of manufacturing a circuit board in which a copper paste having a different viscosity and composition is repeatedly printed on an aluminum nitride substrate and sintered to form a pattern. This patent discloses a method of adding CuO or Cu 2 O and an adhesive glass to a copper paste in order to improve adhesion between an aluminum nitride substrate and a copper pattern. However, there has been a problem that it is difficult to obtain a sufficient adhesive force simply by including copper oxide and an adhesive glass in the copper paste.

Korea Patent No. 0477866 Korean Patent Publication No. 2014-0127228 Korean Patent No. 1393760 Korean Patent Publication No. 2014-0095083

SUMMARY OF THE INVENTION It is an object of the present invention to provide a method of manufacturing a ceramic circuit substrate of a metal paste printing method which is excellent in a bonding force between a metal pattern and a ceramic substrate.

The present invention provides a method of manufacturing a semiconductor device comprising the steps of: a) forming a titanium (Ti) thin film layer on a ceramic substrate; b) forming a copper (Cu) thin film layer on the titanium (Ti) c) printing and patterning a copper (Cu) pattern on the copper (Cu) thin film layer using a copper (Cu) paste and then drying the copper (Cu) pattern one or more times to form a copper (Cu) pattern layer; d) Sintering the copper (Cu) pattern layer; e) removing a copper (Cu) thin film layer of the portion where the copper (Cu) pattern layer is not formed; f) And removing the titanium (Ti) thin film layer of the non-formed portion.

The step a) is preferably a step of forming a titanium (Ti) thin film layer to a thickness of 1000 to 10000 Å. In the step a), the ceramic substrate is heated to a temperature of 250 to 350 ° C., Is formed.

In the step b), the copper (Cu) thin film layer may be formed to a thickness of 1000 to 10000 Å.

In addition, the copper (Cu) paste in step c) preferably includes a spherical copper (Cu) powder, a glass frit, a solvent, and a binder.

The ceramic substrate in the step a) is preferably a nitride, more preferably AlN or Si 3 N 4 . When the ceramic substrate is made of nitride, it is preferable that the method further comprises a step of forming an oxide layer on the surface of the nitride by heat-treating the ceramic substrate at 850 to 950 ° C for 50 to 70 minutes in the air before the step a).

The step e) may be a wet etching step using an etchant for selectively removing copper (Cu), and the step f) may be a wet etching step using an etchant for selectively removing titanium (Ti).

And the step c) may be a step of forming a copper (Cu) pattern layer having a thickness of 10 to 400 탆.

According to the method for manufacturing a ceramic circuit board according to the present invention, a ceramic circuit board having excellent bonding force between a metal pattern and a ceramic substrate can be easily manufactured.

1 is a flowchart of an embodiment of a method of manufacturing a ceramic circuit board according to the present invention.
2 is a view showing a state in which a titanium (Ti) thin film layer is formed on a ceramic substrate.
3 is a view showing a state in which a copper (Cu) thin film layer is formed on a titanium (Ti) thin film layer.
4 is a view showing a state in which a copper (Cu) pattern layer is formed on a copper (Cu) thin film layer.
5 is a view showing a state in which a copper (Cu) thin film layer is removed.
6 is a view showing a state in which the titanium (Ti) thin film layer is removed.

Hereinafter, preferred embodiments of a method of manufacturing a substrate according to the present invention will be described in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. It is provided to let you know.

1 is a flowchart of an embodiment of a method of manufacturing a ceramic circuit board according to the present invention.

Referring to FIG. 1, an embodiment of a method of manufacturing a ceramic circuit board according to the present invention starts with a step (S1) of forming a titanium (Ti) thin film layer 20 on a ceramic substrate 10.

The ceramic substrate 10 is not particularly limited, but is preferably a nitride. For example, AlN or Si 3 N 4 . Since nitrides such as AlN and Si 3 N 4 have a higher thermal conductivity than oxides, they are suitable as substrates for mounting devices having large heating values. The titanium (Ti) thin film layer 20 may be directly formed on the ceramic substrate 10, but the ceramic substrate 10 may be thermally treated at 850 to 950 캜 in the air for 50 to 70 minutes to form an oxide layer on the surface of the nitride A titanium (Ti) thin film layer 20 may be formed later. This is because oxides rather than nitrides have excellent adhesion to metals.

The titanium (Ti) thin film layer 20 is preferably formed to a thickness of 1000 to 10000 angstroms. The titanium (Ti) thin film layer 20 can be formed by various known methods. For example, it can be formed by a sputtering method. The step of forming the titanium (Ti) thin film layer 20 is performed by heating the ceramic substrate 10 at a temperature of 250 to 350 占 폚 so that the adhesion between the titanium (Ti) thin film layer 20 and the ceramic substrate 10 It is preferable from the viewpoint that it can be improved. 2 is a view showing a state in which a titanium (Ti) thin film layer is formed on a ceramic substrate.

Next, a copper (Cu) thin film layer 30 is formed on the titanium (Ti) thin film layer 20 (S2). The copper (Cu) thin film layer 30 can be formed by various known methods. The copper (Cu) thin film layer 30 is preferably formed to a thickness of 1000 to 10000 angstroms. 3 is a view showing a state in which a copper (Cu) thin film layer is formed on a titanium (Ti) thin film layer.

Next, a copper (Cu) pattern is printed on the copper (Cu) thin film layer 30 using a copper (Cu) paste and then dried to form a copper (Cu) pattern layer 40 (S3). The printing and drying steps can be repeated until the thickness of the printing layer is 10 to 400 mu m.

The copper (Cu) paste includes spherical copper (Cu) powder, glass frit, solvent and binder. The glass frit serves as a sintering aid for sintering copper (Cu) powder and compensates for the difference in thermal expansion coefficient between the copper pattern layer 40 and the ceramic substrate 10. 4 is a view showing a state in which a copper (Cu) pattern layer is formed on a copper (Cu) thin film layer.

Next, the copper (Cu) pattern layer 40 is sintered (S4). The heat treatment profile for sintering the copper (Cu) pattern layer 40 includes a bake out step of supplying a small amount of water vapor or oxygen into a nitrogen atmosphere in order to remove the binder, a step of sintering the copper (Cu) And a cooling step. The step of sintering the copper (Cu) powder in liquid phase is preferably carried out in a nitrogen atmosphere in order to prevent oxidation of copper (Cu). At this time, a small amount of oxygen can be supplied so that the glass frit is easily wetted to the copper (Cu) powder. The baking-out step may be carried out at about 300 to 500 ° C, and the liquid-phase sintering step may be carried out at about 700 to 900 ° C. The time required for the total sintering is about 50 to 70 minutes, and can be carried out in a continuous heat treatment furnace such as a muffle type heat treatment furnace or in a batch type heat treatment furnace such as a box oven.

Next, the copper (Cu) thin film layer where the copper (Cu) pattern layer is not formed is removed (S5). This step can be carried out using an etching solution which selectively dissolves copper (Cu). The sintered copper (Cu) pattern layer 45 is partially dissolved by the etchant but is not problematic because the thickness of the copper (Cu) pattern layer 45 is much thicker than the thickness of the copper (Cu) thin film layer 30 Do not. 5 is a view showing a state in which a copper (Cu) thin film layer is removed.

Finally, the titanium (Ti) thin film layer of the portion where the copper (Cu) pattern layer is not formed is removed (S6). This step may be carried out using an etchant that selectively dissolves titanium (Ti) and does not dissolve the copper (Cu) pattern layer 45. 6 is a view showing a state in which the titanium (Ti) thin film layer is removed.

If necessary, nickel (Ni) plating, gold (Au) plating, and the like can be further added. After the plating, a PSR (photo solder resist) paste is printed and then heat-treated to mount the element on the ceramic circuit board through the reflow process It is possible to prevent the device from being distorted in the course of the process.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation in the embodiment in which said invention is directed. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the appended claims.

10: Ceramic substrate
20, 25: a titanium (Ti) thin film layer
30, 35: Copper (Cu) thin film layer
40: Copper (Cu) pattern layer
45: Sintered copper (Cu) pattern layer

Claims (11)

a) forming a titanium (Ti) thin film layer on a ceramic substrate,
b) forming a copper (Cu) thin film layer on the titanium (Ti) thin film layer;
c) printing and patterning a copper (Cu) pattern on the copper (Cu) thin film layer using a copper (Cu) paste and drying the copper thin film layer one or more times to form a copper (Cu) ;
d) sintering the copper (Cu) pattern layer,
(e) A copper (Cu) thin film layer in a portion where the copper (Cu) pattern layer is not formed and a part of the copper (Cu) pattern layer sintered are simultaneously etched by using an etching solution for selectively removing copper Step,
f) removing the titanium (Ti) thin film layer of the portion where the copper (Cu) pattern layer is not formed. The method according to claim 1,
The step a)
Forming a titanium (Ti) thin film layer to a thickness of 1000 to 10000 angstroms. The method according to claim 1,
The step a)
And forming a titanium (Ti) thin film layer while the ceramic substrate is heated to 250 to 350 占 폚. The method according to claim 1,
The step b)
Wherein the copper (Cu) thin film layer is formed to a thickness of 1000 to 10000 angstroms. The method according to claim 1,
Wherein the copper (Cu) paste of step (c) comprises spherical copper (Cu) powder, glass frit, solvent and binder. The method according to claim 1,
Wherein the ceramic substrate in step a) is a nitride. The method according to claim 6,
The nitride is AlN, or the method of manufacturing a ceramic circuit board Si 3 N 4. The method according to claim 6,
Further comprising the step of heat treating the ceramic substrate at 850 to 950 ° C for 50 to 70 minutes in the air before the step a) to form an oxide layer on the surface of the nitride. delete The method according to claim 1,
Wherein the step (f) is a wet etching step using an etchant for selectively removing titanium (Ti). delete
KR1020150093756A 2015-06-30 2015-06-30 Method of manufacturing ceramic circuit board KR101740453B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020150093756A KR101740453B1 (en) 2015-06-30 2015-06-30 Method of manufacturing ceramic circuit board
CN201680038890.2A CN107852827A (en) 2015-06-30 2016-06-23 The manufacture method of ceramic circuit board
PCT/KR2016/006668 WO2017003128A1 (en) 2015-06-30 2016-06-23 Method for manufacturing ceramic circuit board
JP2017567738A JP2018524816A (en) 2015-06-30 2016-06-23 Manufacturing method of ceramic circuit board

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KR1020150093756A KR101740453B1 (en) 2015-06-30 2015-06-30 Method of manufacturing ceramic circuit board

Related Child Applications (1)

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KR1020170029483A Division KR20170029481A (en) 2017-03-08 2017-03-08 Method of manufacturing ceramic circuit board

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KR20170003287A KR20170003287A (en) 2017-01-09
KR101740453B1 true KR101740453B1 (en) 2017-05-26

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KR (1) KR101740453B1 (en)
CN (1) CN107852827A (en)
WO (1) WO2017003128A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6774898B2 (en) * 2016-03-28 2020-10-28 三ツ星ベルト株式会社 Double-sided wiring board with through electrodes and its manufacturing method
EP3468312B1 (en) * 2017-10-06 2023-11-29 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Method of manufacturing a component carrier having a three dimensionally printed wiring structure
CN110248465B (en) * 2019-06-20 2024-03-19 上海铠琪科技有限公司 Thick film and copper-clad integrated ceramic circuit board and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000272977A (en) * 1999-03-26 2000-10-03 Toshiba Corp Ceramics circuit substrate
JP2002280709A (en) * 2001-03-16 2002-09-27 Mitsuboshi Belting Ltd Method of manufacturing ceramic circuit board and board thereby

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994009182A1 (en) * 1992-10-21 1994-04-28 Tokin Corporation Metal powder composition for metallization and metallized substrate
JPH09172247A (en) * 1995-12-20 1997-06-30 Toshiba Corp Ceramic circuit board and manufacture thereof
JPH10107392A (en) * 1996-09-26 1998-04-24 Ibiden Co Ltd Ceramic wiring board
JP3682552B2 (en) 1997-03-12 2005-08-10 同和鉱業株式会社 Method for producing metal-ceramic composite substrate
JP3861648B2 (en) * 2001-10-10 2006-12-20 住友金属鉱山株式会社 Copper conductor paste composition, method for producing the same, and electronic component using the same
JP2007150050A (en) * 2005-11-29 2007-06-14 Tokuyama Corp Method of manufacturing printed wiring board
KR101393760B1 (en) 2007-04-17 2014-05-30 엘지이노텍 주식회사 Bonding method of ceramics substrate and metal foil
KR101234878B1 (en) * 2011-08-05 2013-02-19 삼성전기주식회사 Ceramic substrate of thin film electrode, and method for preparing the same
DE102012219904A1 (en) 2011-11-03 2013-05-08 Ceramtec Gmbh Circuit board made of AlN with copper structures
WO2013115359A1 (en) 2012-02-01 2013-08-08 三菱マテリアル株式会社 Substrate for power modules, substrate with heat sink for power modules, power module, method for producing substrate for power modules, and paste for bonding copper member
CN103140026B (en) * 2013-02-04 2015-12-02 深圳市佳捷特陶瓷电路技术有限公司 ceramic copper-clad plate and preparation method thereof
CN104505137A (en) * 2014-12-10 2015-04-08 南京工业大学 Conductive copper paste and preparation method and use thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000272977A (en) * 1999-03-26 2000-10-03 Toshiba Corp Ceramics circuit substrate
JP2002280709A (en) * 2001-03-16 2002-09-27 Mitsuboshi Belting Ltd Method of manufacturing ceramic circuit board and board thereby

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WO2017003128A1 (en) 2017-01-05
CN107852827A (en) 2018-03-27
KR20170003287A (en) 2017-01-09
JP2018524816A (en) 2018-08-30

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